JPS62246144A - Production of vertically magnetized film - Google Patents
Production of vertically magnetized filmInfo
- Publication number
- JPS62246144A JPS62246144A JP8959786A JP8959786A JPS62246144A JP S62246144 A JPS62246144 A JP S62246144A JP 8959786 A JP8959786 A JP 8959786A JP 8959786 A JP8959786 A JP 8959786A JP S62246144 A JPS62246144 A JP S62246144A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- iron
- film
- holder
- impressed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 25
- 229910052742 iron Inorganic materials 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 12
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 10
- 239000000463 material Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 8
- 238000001704 evaporation Methods 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract description 3
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 10
- 230000005415 magnetization Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- -1 barium Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は垂直磁化膜の製造方法に係り、特に垂直磁気記
録に用いられる少なくともバリウム等のアルカリ土類金
Jフ元素を含むフェライト類から成る垂直磁化膜を生成
するに当り、フェライト類の結晶な配向性良く、堅ろう
膜として基板上にブレーティングするに好適な垂直磁化
膜の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a perpendicularly magnetized film, and in particular, a perpendicularly magnetized film made of ferrites containing at least an alkaline earth metal such as barium, which is used in perpendicular magnetic recording. The present invention relates to a method for producing a perpendicularly magnetized film which has good crystal orientation of ferrites and is suitable for being plated onto a substrate as a tough film.
[従来の技術]
近年、高密度磁気記録の可能な方式として、長手(面内
)磁化を用いる方式に代り、垂直磁化を用いる磁気記録
方式が提唱され、研究が進められている。この垂直磁化
方式の磁”性膜としては、コバルト(Co)とクロム(
Cr)を用いた合金薄膜をスパッタや蒸着法によりベー
ス上に生成したものが多く用いられており、良好な特性
を実現している。[Prior Art] In recent years, a magnetic recording method using perpendicular magnetization has been proposed as a method capable of high-density magnetic recording, instead of a method using longitudinal (in-plane) magnetization, and research is progressing. This perpendicular magnetization type magnetic film consists of cobalt (Co) and chromium (
A thin alloy film using Cr) formed on a base by sputtering or vapor deposition is often used, and has achieved good characteristics.
他方、バリウムフェライト等の酸化物をベースに塗布し
て磁性膜を形成した垂直磁化媒体が知られている。On the other hand, perpendicular magnetization media are known in which a magnetic film is formed by coating an oxide such as barium ferrite on a base.
[発明が解決しようとする問題点]
しかしながら、前者のCo−Cr垂直薄膜は磁気的に良
好な特性を有する反面、可撓性に乏しくフレキシブル磁
気ディスク等に用いた場合に良好なヘットタッチを得に
くいという問題点がある。更に、蒸着やスパッタで生成
した薄膜表面は平滑性が悪く磁気ヘッドの摩耗や表面は
く離等の欠点を有している。更に酸化物媒体に較べ耐食
性に劣るという欠点もある。[Problems to be Solved by the Invention] However, although the former Co-Cr vertical thin film has good magnetic properties, it has poor flexibility, making it difficult to obtain good head touch when used in flexible magnetic disks, etc. There is a problem. Furthermore, the surface of a thin film produced by vapor deposition or sputtering has poor smoothness and has drawbacks such as abrasion of the magnetic head and surface peeling. Furthermore, it has the disadvantage of being inferior in corrosion resistance compared to oxide media.
他方、後者のバリウムフェライト等の酸化物をベース上
に塗布して成る垂直媒体は、可撓性に潰れ、表面の平滑
性か良いという長所を有する反面、ハインタの混入によ
る充填率の関係から、本来ハリウムフェライ]・の有す
る磁束密度5500Gに対して、現実には20DOG程
度しか確保されておらず、優れた磁気特性を得る」二で
の障害となっていた。一方、バリウムフェライトを蒸看
やスパッタ技術を用いてち密に薄j1λとして生成する
試みも行なわれているか、組成変化等の問題点があるば
かりてなく、IIET等の可撓性基板上に成nりする二
19は温度等の理由から困難であるという問題かあった
。 本発明は上記の様な従来の技術の問題点を解消する
ために鋭意研究を行った結果完成されたものであり、そ
の目的とするところは、アルカリ土類金属元素を含有す
る化合物と鉄または鉄を含有する化合物とを用いて、不
活性ガスと反応性ガスの混合気体の高周波励起プラズマ
中で、イオンブレーティング技術により垂直磁化膜を生
成することにより、可撓性及び表面乎滑性を確保し、且
つ良好な磁気特性を実現し得る垂直磁化IIりを製造す
る方法を提供するものである。On the other hand, the latter vertical medium, which is made by coating an oxide such as barium ferrite on a base, has the advantage of being flexible and having a good surface smoothness, but on the other hand, it has problems with the filling rate due to the inclusion of ferrite. Although the magnetic flux density originally possessed by halium ferrite is 5,500 G, in reality only about 20 DOG is secured, which has been an obstacle in achieving excellent magnetic properties. On the other hand, attempts have been made to produce barium ferrite densely as a thin layer of j1λ using vaporization or sputtering techniques, but these not only have problems such as compositional changes, but also have been attempted to produce barium ferrite on flexible substrates such as IIET. There was a problem in that it was difficult to carry out the process due to temperature and other reasons. The present invention was completed as a result of intensive research to solve the problems of the conventional technology as described above, and its purpose is to combine a compound containing an alkaline earth metal element with iron or By using an iron-containing compound to generate a perpendicularly magnetized film using ion blating technology in a high-frequency excited plasma of a mixed gas of an inert gas and a reactive gas, flexibility and surface smoothness can be improved. The present invention provides a method for manufacturing perpendicular magnetization II which can secure and realize good magnetic properties.
[問題点を解決するだめの手段コ
すなわち、本発明はアルカリ土類金属元素を含有する化
合物と鉄または鉄を含有する化合物とを蒸発させ、不活
性ガスと反応性ガスの混合気体の高周波励起プラズマ中
て反応させ、被蒸着基板玉に垂直配向性をもつた結晶構
造磁性膜としてJ&長させることを特徴とする垂直磁化
膜の製造方法である。[Means for solving the problem] Namely, the present invention vaporizes a compound containing an alkaline earth metal element and iron or a compound containing iron, and uses high-frequency excitation of a mixed gas of an inert gas and a reactive gas. This is a method for producing a perpendicularly magnetized film, which is characterized by reacting in plasma to form a crystalline magnetic film having a vertical orientation on a substrate to be deposited and forming a J& length.
以下、図面を参照しながら、本発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to the drawings.
第1図は本発明に係る垂直磁化膜の製造方法に使用する
装置の1例を示す説明図である。同第1図に示すように
、装置は図示していない排気系に連通ずる排気口l並び
にガス導入のための可変リークバルブ2を配した給気口
3を有する密閉真空容器(以下、ベルジャと称する)4
内部に抵抗加熱により材料5を蒸発させるボート6と高
周波励起により低圧気体の放電プラズマを発生するコイ
ル状の電極7と被蒸着基板8を保持すると共にプラズマ
加速用の負の直流電圧を印加されるホルダ9を適宜配置
して構成される。なお、″it極7はベルジャ4との間
に10〜20 M II z程度の高周波電界を発生す
る高周波電源10に接続される。一方、ホルタ9はベル
ジャ4に対して負の加速用直流電圧を印加する直流電源
11に接続される。さらに、ボート6には図示していな
い発熱体が組み込まれており、この発熱体は材料5の蒸
発用の電源12に接続される。FIG. 1 is an explanatory diagram showing an example of an apparatus used in the method of manufacturing a perpendicularly magnetized film according to the present invention. As shown in FIG. 1, the device consists of a closed vacuum container (hereinafter referred to as a bell jar) having an exhaust port 1 communicating with an exhaust system (not shown) and an air supply port 3 equipped with a variable leak valve 2 for introducing gas. 4)
Inside, a boat 6 for evaporating material 5 by resistance heating, a coil-shaped electrode 7 for generating low-pressure gas discharge plasma by high-frequency excitation, and a substrate 8 to be deposited are held, and a negative DC voltage for plasma acceleration is applied. It is constructed by appropriately arranging holders 9. Note that the "it pole 7 is connected to a high frequency power source 10 that generates a high frequency electric field of about 10 to 20 M II z between it and the bell jar 4. On the other hand, the Holter 9 applies a negative accelerating DC voltage to the bell jar 4. The boat 6 is further equipped with a heating element (not shown), and this heating element is connected to a power source 12 for evaporating the material 5.
次に、上記の様な構成からなる装置を使用して本発明の
垂直磁化膜の製造方法の一実施態様について説明する。Next, one embodiment of the method for manufacturing a perpendicularly magnetized film of the present invention using the apparatus configured as described above will be described.
なお、アルカリ土類金属を含有する化合物と鉄または鉄
を含有する化合物として代表的なバリウムフェライトを
使用する場合について説明する。Note that a case will be described in which a typical barium ferrite is used as a compound containing an alkaline earth metal and iron or a compound containing iron.
まず、ホルタ9にポリエステルやポリイミド等の可撓性
の基板8を装着する。ボート6内に材料5としてベレッ
ト状または粉体にしたバリウムフェライトB OO−n
I’ e z Osを入れ、所定位とに保持する。First, a flexible substrate 8 made of polyester, polyimide, or the like is attached to the Holter 9. Barium ferrite B OO-n in the form of a pellet or powder is placed in the boat 6 as the material 5.
Insert the I'ez Os and hold in place.
次に、排気口1よりベルジャ4内の空気を引き抜き、1
0−’Torr以下迄排気した後、給気口3より可変リ
ークバルブ2を介してアルゴンガスArと酸素等の反応
性ガスとの混合気体を導入し、l O−4〜1O−5T
orr程度にベルジャ4内の圧力を保つ。Next, the air inside the bell jar 4 is pulled out from the exhaust port 1, and
After exhausting to 0-' Torr or less, a mixture of argon gas Ar and a reactive gas such as oxygen is introduced from the air supply port 3 through the variable leak valve 2, and
The pressure inside the bell jar 4 is maintained at about .
次に、電極7に高周波電源10より高周波電圧を印加し
、ベルジャ4内にグロー放電を発生させる。しかる後蒸
発用電源12よりボート6に給電し、材料5としてのバ
リウムフェライトを蒸発させる。併せて、直流電源11
よりホルダ9に負の電圧を印加する。Next, a high frequency voltage is applied to the electrode 7 from the high frequency power supply 10 to generate a glow discharge within the bell jar 4. Thereafter, power is supplied to the boat 6 from the evaporation power source 12, and the barium ferrite as the material 5 is evaporated. In addition, DC power supply 11
A negative voltage is applied to the holder 9.
上述の様なプロセスをとることによって、ボート6より
出たバリウムフェライトの粒子は、電極7付近を通過す
るときに放電しているガスイオンと衝突して、電荷の交
換か行なわれ、イオン化する。イオン化された粒子は中
性粒子と共に基板8に付着するか、ホルダ9に印加され
ている負電圧の作用により運動エネルギーを与えられて
付着力を強化される。なお、ボー1−6から蒸発したバ
リウムフェライト粒子は、イオン化されたものと中性の
ものの混在したものとなるため、基板8上に付着する際
、結晶の方位成長か助長され、−@配向性をもった結晶
膜としてL#、長する。このように高周波励起放電プラ
ズマを発生ずるコイルと、基板に直流電圧印加手段をも
つ成膜装置において、成膜時の基板温度上昇は2きわめ
て小さくおさえられ、有機樹脂フィルムの基板などの熱
変形は二jY実上1問題とならなくなる。なお、この場
合、ベルジャ4内のガス圧か高ければ高い程、基板8の
表面に対して垂直方向に柱状組織となり易い。以上の様
にして、基板8上にはバリウムフェライトBaO−nF
e2O:+ (但し2 nは1〜9の整数を示す)の膜
か得られるが、とりわけn=6.つまり六万品構造のバ
リウムフェライトrlaO・5Fe20:+の柱状結晶
をち密に成膜することにより、可撓性、表面性、磁気特
性の優れた垂直磁化膜を得ることかてきる。By employing the above-described process, the barium ferrite particles coming out of the boat 6 collide with the discharging gas ions when passing near the electrode 7, causing charge exchange and ionization. The ionized particles adhere to the substrate 8 together with the neutral particles, or are given kinetic energy by the action of the negative voltage applied to the holder 9, and their adhesion is strengthened. Note that the barium ferrite particles evaporated from Bo 1-6 are a mixture of ionized and neutral particles, so when deposited on the substrate 8, crystal orientation growth is promoted, resulting in -@ orientation. As a crystalline film with a length of L#. In this way, in a film forming apparatus equipped with a coil that generates high-frequency excited discharge plasma and means for applying a DC voltage to the substrate, the rise in temperature of the substrate during film formation can be kept extremely small, and thermal deformation of organic resin film substrates can be prevented. 2jY will no longer be a problem in practice. In this case, the higher the gas pressure inside the bell jar 4, the more likely it is that a columnar structure will form in the direction perpendicular to the surface of the substrate 8. As described above, barium ferrite BaO-nF is formed on the substrate 8.
e2O:+ (where 2n is an integer from 1 to 9) can be obtained, especially when n=6. That is, by densely forming columnar crystals of barium ferrite rlaO.5Fe20:+ with a 60,000-article structure, it is possible to obtain a perpendicularly magnetized film with excellent flexibility, surface properties, and magnetic properties.
上記バリウムフェライトBa0・6(Fe20z)の垂
直配向性の良好かつち密な膜は、ベルジャ内のガス圧や
高周波電源の条件等、各種の条件を適宜制御する)バに
よって、実現することかできる。The above-described dense film of barium ferrite Ba0.6 (Fe20z) with good vertical orientation can be realized by appropriately controlling various conditions such as the gas pressure in the bell jar and the conditions of the high frequency power source.
さらに、屯直磁化I模の特性を陶土させるためには、以
りに説明したイオンブレーテインクの方法に加えて、0
′52図および第3図に示ずようなバイアス磁界印加手
段を持つ装置で成膜すると、良好な結果を得ることかで
きる。Furthermore, in order to make the characteristics of the tonnai magnetization I model similar to clay, in addition to the method of ion-brake ink explained above, it is necessary to
Good results can be obtained by forming a film using an apparatus having a bias magnetic field applying means as shown in FIGS. 52 and 3.
すなわち、第2図に示す様にホルダ9の上部に上下方向
に磁化された永久磁石13を配置し、基板8に垂直方向
磁界を印加し成膜するものである。That is, as shown in FIG. 2, a permanent magnet 13 magnetized in the vertical direction is placed above the holder 9, and a perpendicular magnetic field is applied to the substrate 8 to form a film.
この場合、ホルダ9がそのまま永久磁石材料で構成され
ているものを使用すれば、上記と同一の効果を得ること
ができる。また、第3図に示す様にベルジャ外部にバイ
アス磁界コイル14.14’を設置し、基板8に垂直な
バイアス磁界を印加する手段も加えることかできる。例
えば1コイルによるバイアス磁界はその磁界強度がコン
トローララルであり、広い面精に均一磁界をかけること
かできるので好ましい。In this case, if the holder 9 is made of a permanent magnet material, the same effect as described above can be obtained. Further, as shown in FIG. 3, a means for applying a bias magnetic field perpendicular to the substrate 8 can be added by installing a bias magnetic field coil 14, 14' outside the bell jar. For example, a bias magnetic field generated by one coil is preferable because its magnetic field strength is controlled and a uniform magnetic field can be applied to a wide area.
このように垂直磁界をバイアスとして与えた場合、バリ
ウムフェライト膜の結晶磁気異方性及び誘導磁気異方性
のエネルギーか高くなり、垂直異方性に優れた膜を得る
ことが可能となる。When a perpendicular magnetic field is applied as a bias in this manner, the energy of the crystal magnetic anisotropy and induced magnetic anisotropy of the barium ferrite film increases, making it possible to obtain a film with excellent perpendicular anisotropy.
上記の説明においてはアルカリ土類金属を含有する化合
物と鉄または鉄を含有する化合物としてバリウムフェラ
イト材料を蒸発させ、基板上にブレーティングする方法
について例示したが1本発明の実施はこれに限定される
ものではなく、アルカリ土類金属を含有する化合物と鉄
または鉄を含有する化合物との2種類以上の材料を蒸発
させ、プラズマ中で反応させて、最終的に垂直磁化膜を
基板上に生成する如き方法を採っても良い。In the above explanation, a method of evaporating barium ferrite material as a compound containing an alkaline earth metal and iron or a compound containing iron and brating it on a substrate was exemplified, but the implementation of the present invention is not limited to this. Instead of a material containing a compound containing an alkaline earth metal and a compound containing iron or iron, two or more materials are evaporated and reacted in a plasma to finally produce a perpendicularly magnetized film on the substrate. You may also use the following method.
以下、その材料の組み合せの具体例を列挙すると、 B
aO+ Fe2O3,Ba(011)2+Fe、O,
。Specific examples of material combinations are listed below: B
aO+ Fe2O3, Ba(011)2+Fe, O,
.
B a CO2+ F e 2031 B a
O+ F e (OIt ) 3 +Ba(Oll)
2+ Fe(Oll)、、 BaC0,+ F
e(Oft)、。B a CO2+ F e 2031 B a
O+ Fe (OIt) 3 +Ba(Oll)
2+ Fe(Oll), BaC0,+ F
e(Of).
BaO+ Fe、 Ba(Oll)z+ Fc等か挙
げられるが、必ずしもこれ等に限定されるものではない
。Examples include BaO+Fe, Ba(Oll)z+Fc, etc., but are not necessarily limited to these.
なお、本発明において、上記の2種類の材料は1個のボ
ートに混合して入れても、2個のボートに個別に入れて
も良く、プラズマ中で良好な反応が行なわれ、 BaO
・6(Fez(1+)の柱状結晶か基板上に一輔配向性
良くブレーティングされる様な条件(不活性ガスと反応
性ガスの混合気体のガス圧、加速電圧、高周波条件、等
)を適宜選択することによって、良好でち密な垂直磁化
膜を生成することがてきる。In addition, in the present invention, the above two types of materials may be mixed and placed in one boat or individually placed in two boats, and a good reaction takes place in the plasma.
・Conditions (gas pressure of mixed gas of inert gas and reactive gas, accelerating voltage, high frequency conditions, etc.) such that columnar crystals of 6 (Fez (1+)) are plated with good orientation on the substrate. By making an appropriate selection, a good and dense perpendicularly magnetized film can be produced.
また、上記の説明では、ベルジャ内に導入する不活性ガ
スとしてアルゴンガスな用いる場合を例示したが、不活
性ガスであれば、ネオン、ヘリウム、クリプトン等その
他どの様なガスでも適用可能である。Further, in the above description, the case where argon gas is used as the inert gas introduced into the bell jar is exemplified, but any other gas such as neon, helium, krypton, etc. can be used as long as it is an inert gas.
一方、ベルジャ内に不活性ガスに加えて酸素等の反応性
ガスを導入し、両者の分圧を適宜制御することによって
、プラズマ中の反応に基づくフェライト類の垂直磁化膜
な生成することもできる。On the other hand, by introducing a reactive gas such as oxygen in addition to an inert gas into the bell jar and controlling the partial pressure of both appropriately, it is also possible to generate perpendicularly magnetized films of ferrites based on reactions in plasma. .
なお、上記各蒸発材料中、Ba(011)2. BaC
0=’。In addition, among the above-mentioned evaporation materials, Ba(011)2. BaC
0='.
Fe(叶)3はいずれも結品水を含んでいても良く、反
応条件の選択により2垂直磁化膜、の生成が可能である
。Any of the Fe (Ko) 3 may contain coagulation water, and by selecting reaction conditions, it is possible to generate two perpendicularly magnetized films.
また、上記の説明は垂直磁化膜としてアルカリ土類金属
元素のうち、バリウムを用いた化合物の場合を例示した
か、バリウムの代りにストロンチウム等の他のアルカリ
土類金属元素を含有する化合物を用いて、六方晶構造の
物質を生成できれば、同様に基板上に垂直磁化膜を形成
させることがてきる。In addition, the above explanation exemplifies the case where a compound using barium among alkaline earth metal elements is used as a perpendicular magnetization film, or the case where a compound containing other alkaline earth metal elements such as strontium is used instead of barium. If a substance with a hexagonal crystal structure can be produced, a perpendicularly magnetized film can be similarly formed on a substrate.
[作用]
本発明においてはアルカリ土類金属元素を含有する化合
物と鉄または鉄を含有する化合物とを蒸発させ、不活性
ガスと反応性ガスの混合気体の高周波プラズマ中で反応
せしめているので、加熱されて蒸発したアルカリ土類金
属元素を含有する化合物と鉄または鉄を含有する化合物
から生成した粒子は不活性ガスの高周波プラズマ中を通
過するときに、生成している不活性ガスイオンと衝突し
て電荷の交換が行われ、一部の粒子はイオン化し、イオ
ン化された粒子と中性粒子の混合状態となり、またホル
ダに印加された負電圧により吸引されて運動エネルギー
を付′トされ基板への41着力を増強され被蒸着ノ、(
板へ付着するために、結晶の方位JR,長が増長され、
被蒸着基板上に垂直方向の一軸配向性を有する結晶構造
磁化膜を形成するものと推定される。[Function] In the present invention, a compound containing an alkaline earth metal element and iron or a compound containing iron are evaporated and reacted in a high-frequency plasma of a mixed gas of an inert gas and a reactive gas. Particles generated from a heated and vaporized compound containing an alkaline earth metal element and iron or a compound containing iron collide with the generated inert gas ions as they pass through a high-frequency plasma of inert gas. As a result, some of the particles are ionized, resulting in a mixture of ionized particles and neutral particles, which are attracted by the negative voltage applied to the holder and impart kinetic energy to the substrate. (
In order to adhere to the plate, the crystal orientation JR, length is increased,
It is presumed that a crystal structure magnetized film having vertical uniaxial orientation is formed on the substrate to be deposited.
また、被蒸着基板の近傍にバイアス磁界を印加しながら
成膜すると結晶磁気異方性および誘導磁気異方性のエネ
ルギーか増大されより垂直異方性にすぐれた結晶構造磁
化膜を形成するものと推定される。Furthermore, when a film is formed while applying a bias magnetic field near the substrate to be deposited, the energy of crystal magnetic anisotropy and induced magnetic anisotropy increases, forming a crystal structure magnetized film with better perpendicular anisotropy. Presumed.
[実施例コ
次に、実施例を示し、本発明をさらに具体的に説明する
。[Example] Next, the present invention will be explained in more detail with reference to Examples.
実施例1
第1図に示す装置を用いて、下記の方法により基板に垂
直磁化膜を形成した。まず、ホルダにたて150m+s
、よこ150am 、厚さ0.04mmの可撓性基板を
装着した。ボートにBaC0:Iと Fe2O:+の混
合粉末(Ba: Fe= l : 6 )を入れ、ベル
ジャ内の所定の位置に保持した。Example 1 A perpendicularly magnetized film was formed on a substrate by the following method using the apparatus shown in FIG. First, 150m+s vertically in the holder.
A flexible substrate with a width of 150 am and a thickness of 0.04 mm was attached. A mixed powder of BaC0:I and Fe2O:+ (Ba:Fe=l:6) was placed in a boat and held at a predetermined position in a bell jar.
次に排気口より排気し、ベルジャ内を空気圧10−’T
orrにした後、給気口よりアルゴンガスと酸素を4=
1の割合に混合した混合気体を導入し、l X 10−
’Torrの真空状態に保持した。高周波電源から電極
に高周波電力220W で高周波電界13.6M1l
zを発生させ放電を行った。Next, exhaust the air from the exhaust port, and the air pressure inside the bell jar is 10-'T.
After setting it to orr, supply 4= argon gas and oxygen from the air supply port.
Introducing a gas mixture mixed at a ratio of 1 x 10-
It was maintained at a vacuum of 'Torr. High frequency electric field of 13.6M1l with high frequency power of 220W from the high frequency power supply to the electrode
z was generated and discharge was performed.
次に、蒸発用電源からの給電によりボートを約1400
°Cに加熱し、混合粉末を溶融、蒸発させ、約5分間可
撓性基板にイオンブレーティングを行ったところ、膜厚
的IJLIIの表面が平滑で可撓性のある垂直磁化膜を
積層した可撓性基板が得られた。Next, power is supplied from the evaporation power source to power the boat to about 1400 m
When heated to °C to melt and evaporate the mixed powder and perform ion blating on the flexible substrate for about 5 minutes, a perpendicularly magnetized film with a smooth and flexible surface of IJLII was laminated. A flexible substrate was obtained.
得られた可撓性基板の磁気特性なV、S、M、により試
験を行ったところ 1lc= 10000e、Ms=
4800 Gの結果か得られた。When the magnetic properties of the obtained flexible substrate were tested using V, S, and M, 1lc=10000e, Ms=
A result of 4800 G was obtained.
[発明の効果コ
以上説明したように、本発明によれば、従来可撓性や表
面平滑性で問題のあったCo−Cr等の合金系の垂直媒
体に代えて、酸化物なMl成に含むバリウムフェライト
等のアルカリ土類金属元素と鉄とを含有する化合物を用
いることによって、可撓性と表面平滑性を実現し、更に
このアルカリ土類金属元素と鉄とを含有する化合物を高
岡波及応性イオンブレーティング技術を通じて垂直配向
性良く、ち密に製膜することによって、良好な磁気特性
を可能とした垂直磁化1模の製造方法を得ることができ
るものである。[Effects of the Invention] As explained above, according to the present invention, an oxide Ml composition can be used instead of an alloy-based vertical medium such as Co-Cr, which has conventionally had problems with flexibility and surface smoothness. By using a compound containing iron and an alkaline earth metal element such as barium ferrite, flexibility and surface smoothness were achieved. By forming a dense film with good perpendicular orientation through reactive ion blating technology, it is possible to obtain a manufacturing method with perpendicular magnetization 1 that enables good magnetic properties.
第1図は本発明に係る垂直磁化膜の製造方法に使用する
装置の1例を示す説明図、第2図及び第3図は装置の他
の例を示す部分説明図である。
l・・・排気口 2・・・可変リークバルツ3・
・・給気口 4・・・ベルジャ5・・・材料
6・・・ボート7・・・電極 8基板FIG. 1 is an explanatory view showing one example of an apparatus used in the method for producing a perpendicularly magnetized film according to the present invention, and FIGS. 2 and 3 are partial explanatory views showing other examples of the apparatus. l...Exhaust port 2...Variable leak valve 3.
...Air supply port 4...Belljar 5...Material
6...Boat 7...Electrode 8 Board
Claims (1)
は鉄を含有する化合物とを蒸発させ、不活性ガスと反応
性ガスの混合気体の高周波励起プラズマ中で反応させ、
被蒸着基板上に垂直配向性をもった結晶構造磁性膜とし
て成長させることを特徴とする垂直磁化膜の製造方法。(1) A compound containing an alkaline earth metal element and iron or a compound containing iron are evaporated and reacted in a high-frequency excited plasma of a mixed gas of an inert gas and a reactive gas,
A method for producing a perpendicularly magnetized film, which comprises growing a vertically oriented crystalline magnetic film on a substrate to be deposited.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8959786A JPS62246144A (en) | 1986-04-18 | 1986-04-18 | Production of vertically magnetized film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8959786A JPS62246144A (en) | 1986-04-18 | 1986-04-18 | Production of vertically magnetized film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62246144A true JPS62246144A (en) | 1987-10-27 |
Family
ID=13975180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8959786A Pending JPS62246144A (en) | 1986-04-18 | 1986-04-18 | Production of vertically magnetized film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62246144A (en) |
-
1986
- 1986-04-18 JP JP8959786A patent/JPS62246144A/en active Pending
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