JPS62245623A - Heat-treating apparatus - Google Patents
Heat-treating apparatusInfo
- Publication number
- JPS62245623A JPS62245623A JP8792886A JP8792886A JPS62245623A JP S62245623 A JPS62245623 A JP S62245623A JP 8792886 A JP8792886 A JP 8792886A JP 8792886 A JP8792886 A JP 8792886A JP S62245623 A JPS62245623 A JP S62245623A
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- treating chamber
- heating body
- end part
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 description 11
- 230000003028 elevating effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、熱処理技術、特に、半導体装置の製造に使用
される縦型の熱処理装置に適用して有効な技術に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat treatment technique, and in particular to a technique effective when applied to a vertical heat treatment apparatus used for manufacturing semiconductor devices.
縦型化学気相成長装置や縦型拡散ｍＷなどについては、
株式会社工業調査会、昭和５７年１１月１５日発行、［
電子材料Ｊ１９８３年１１月号別冊、Ｐ７５〜Ｐ７９お
よび［電子材料Ｊ１９Ｂ４年３月号、ＰＴ５に記載され
ている。Regarding vertical chemical vapor deposition equipment, vertical diffusion mW, etc.
Kogyo Kenkyukai Co., Ltd., published November 15, 1982, [
It is described in Electronic Materials J, November 1983 issue, special edition, pages 75 to 79 and [Electronic Materials J, March 19B4 issue, PT5.
その概要は、軸が鉛直方向に設けられた処理室内に複数
の半導体ウェハを収容し、処理室の周囲に配設され、装
置本体に固定して設けられた加熱体によって所定の温度
に加熱するとともに、処理室の上下端部にそれぞれ接続
された配管を通じて所定の反応ガスなどを流通させるこ
とにより、半導体ウェハ表面に所定の物質からなる薄膜
を形成する化学気相成長処理や、所定の物質を拡散させ
る拡散処理などを行うものである。The concept is that multiple semiconductor wafers are housed in a processing chamber with vertical axes and heated to a predetermined temperature by a heating element that is placed around the processing chamber and fixed to the main body of the device. At the same time, a chemical vapor deposition process that forms a thin film of a specific substance on the surface of a semiconductor wafer, or a chemical vapor deposition process that forms a thin film of a specific substance on the surface of a semiconductor wafer, is performed by flowing a specific reaction gas through pipes connected to the upper and lower ends of the processing chamber. It performs diffusion processing and the like.
ところで、上記のような縦型化学気相成長装置や縦型拡
散装置などにおいては、処理室の内壁に付着した異物を
除去するなどの目的で、加熱体から処理室を定期的に軸
方向に抜き出して洗浄するなどの保守点検作業が必要と
なる。By the way, in the above-mentioned vertical chemical vapor deposition apparatus, vertical diffusion apparatus, etc., the processing chamber is periodically moved in the axial direction from the heating element for the purpose of removing foreign matter adhering to the inner wall of the processing chamber. Maintenance and inspection work such as taking it out and cleaning it is required.
［発明が解決しようとする問題点］
ところが、上記のような構造の装置においては、加熱体
が装置本体に固定されているため、処理室を抜き出す前
に、すなわち、処理室の上端部が、建屋などの天井に近
い比較的高い位置にある状態で、処理室の上端部に接続
された配管を取り外す作業を行わねばならず、高所作業
となり、作業性が劣るとともに、危険であるなど、種々
の不都合があることを本発明者は見いだした。[Problems to be Solved by the Invention] However, in the apparatus having the above structure, since the heating body is fixed to the main body of the apparatus, before the processing chamber is extracted, that is, the upper end of the processing chamber is The pipes connected to the upper end of the processing chamber must be removed from a relatively high position near the ceiling of the building, etc., which requires work at height, which is not only inefficient but also dangerous. The inventors have discovered that there are various disadvantages.
本発明の目的は、保守作業などにおける作業性および安
全性の向上、さらには作業時間の短縮を実現することが
可能な熱処理技術を提供することにある。An object of the present invention is to provide a heat treatment technique that can improve workability and safety in maintenance work, etc., and further shorten work time.
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面から明らかになるであろ
う。The above and other objects and novel features of the present invention include:
It will become clear from the description herein and the accompanying drawings.
［問題点を解決するための手段］
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Means for Solving the Problems] A brief overview of typical inventions disclosed in this application is as follows.
すなわち、縦型の処理室の周囲に配設される加熱体に昇
降機構を設けたものである。That is, a heating body disposed around a vertical processing chamber is provided with an elevating mechanism.
［作用］
上記した手段によれば、たとえば、保守点検などの目的
で処理室を加熱体から抜き出す作業に際して、一端、加
熱体を処理室とともに降下させることにより、該処理室
の上端部に接続されている配管の着脱などを比較的低い
位置で作業性良くかつ安全に行うことができ、処理室の
保守などにおける作業性および安全性の向上、さらには
作業時間の短縮を実現することが可能となる。[Function] According to the above-described means, when the processing chamber is removed from the heating body for the purpose of maintenance and inspection, for example, by lowering the heating body together with the processing chamber, the heating body is connected to the upper end of the processing chamber. It is possible to attach and detach pipes at a relatively low level with good work efficiency and safety, and it is possible to improve work efficiency and safety in maintenance of processing chambers, and to shorten work time. Become.
［実施例］
第１図は、本発明の一実施例である熱処理装置の要部を
示す説明図である。[Example] FIG. 1 is an explanatory diagram showing the main parts of a heat treatment apparatus that is an example of the present invention.
本実施例においては、熱処理装置が、半導体装置の製造
における半導体ウェハの化学気相成長装置として構成さ
れている。In this embodiment, the heat treatment apparatus is configured as a chemical vapor deposition apparatus for semiconductor wafers in the manufacture of semiconductor devices.
ステージ１の上には、軸がほぼ鉛直方向に設けられた円
筒状の加熱体２が設けられ、この加熱体２の内部には、
はぼ同軸状に処理室３が挿入されている。A cylindrical heating element 2 with an axis extending substantially vertically is provided on the stage 1, and inside this heating element 2,
A processing chamber 3 is inserted almost coaxially.
この処理室３の下端部は、接続具４を介してテーブル１
の下端面に着脱自在に固定されている。The lower end of this processing chamber 3 is connected to the table 1 via a connector 4.
It is removably fixed to the lower end surface of the.
また処理室３の上端部には、反応ガス供給口５が設けら
れており、加熱体２の下端部近傍から該加熱体２の側面
外周に沿って処理室３の上端部に到る配管６を介して所
定の図示しない反応ガス供給機構に接続されている。A reaction gas supply port 5 is provided at the upper end of the processing chamber 3, and a pipe 6 runs from near the lower end of the heating element 2 to the upper end of the processing chamber 3 along the outer periphery of the side surface of the heating element 2. It is connected to a predetermined reaction gas supply mechanism (not shown) via.
この配管６には、処理室３の上端部における反応ガス供
給口５との接続部、および加熱体２の下端部近傍に、そ
れぞれ着脱自在な管継手部７および管継手部８が設けら
れている。This piping 6 is provided with a removable pipe joint part 7 and a pipe joint part 8 at the connection part with the reaction gas supply port 5 at the upper end of the processing chamber 3 and near the lower end of the heating element 2, respectively. There is.
処理室３の下端部には、排気口９が設けられ、配管１０
を介して図示しない真空ポンプなどの排気機構に接続さ
れるとともに、排気口９と配管ｌＯとの接続部には、着
脱自在な管継手部１１が設けられている。An exhaust port 9 is provided at the lower end of the processing chamber 3, and a pipe 10 is provided.
The exhaust port 9 is connected to an exhaust mechanism such as a vacuum pump (not shown) via the exhaust port 9, and a removable pipe joint 11 is provided at the connection between the exhaust port 9 and the piping IO.
処理室３の下端部には、着脱自在な蓋体１２が設けられ
、処理室３の下端部が密閉される構造とされている。A removable lid 12 is provided at the lower end of the processing chamber 3 to seal the lower end of the processing chamber 3.
蓋体１２には、処理室３の軸方向に挿入される治具１３
が固定されており、複数の半導体ウエノ＼などの被処理
物１４が、この治具１３に保持された状態で処理室３の
内部の所定の位置に収容されるように構成されている。A jig 13 is inserted into the lid 12 in the axial direction of the processing chamber 3.
is fixed, and the objects 14 to be processed, such as a plurality of semiconductor wafers, are housed in a predetermined position inside the processing chamber 3 while being held by this jig 13.
さらに、蓋体１２には、昇降自在なローダ１５が設けら
れ、該蓋体１２の処理室３の下端部への着脱、および、
治具１３に保持された複数の被処理物１４の処理室３内
への搬入および搬出が行われる構造とされている。Furthermore, the lid 12 is provided with a loader 15 that can be raised and lowered, and the lid 12 can be attached to and removed from the lower end of the processing chamber 3, and
The structure is such that a plurality of objects to be processed 14 held by a jig 13 are carried into and out of the processing chamber 3 .
この場合、加熱体２が位置されるステージｌは、紙面に
垂直な方向に所定の間隔で配設された一対の送りねじ１
６ａおよび送りねじ１６ｂに螺合される昇降機構１６に
よって支持されており、送りねじ１６ａおよび１６ｂを
、モータなどの駆動機構１６ｃおよび歯車機構１６ｄな
どによって同時に所定の方向に回転させることにより、
ステージ１が所望の高さに昇降されるように構成されて
いる。In this case, the stage l on which the heating element 2 is positioned is a pair of feed screws 1 arranged at a predetermined interval in a direction perpendicular to the plane of the paper.
6a and a feed screw 16b, and by simultaneously rotating the feed screws 16a and 16b in a predetermined direction by a drive mechanism 16c such as a motor, a gear mechanism 16d, etc.
The stage 1 is configured to be raised and lowered to a desired height.
以下、本実施例の作用について説明する。The operation of this embodiment will be explained below.
処理室３の内部に収容されている複数の被処理物１４を
加熱体２によって所定の温度に加熱するとともに、処理
室３の上端部に設けられた反応ガス供給口５を通じて所
定の組成の反応ガスを供給しつつ、排気口９を通じて処
理室３の内部を排気することにより、反応ガスが処理室
３の内部を軸方向に流通され、反応ガスの熱分解反応な
どによって、複数の被処理物１４の表面には所定の物質
からなる薄膜が被着形成される。A plurality of objects to be processed 14 housed inside the processing chamber 3 are heated to a predetermined temperature by the heating element 2, and a reaction of a predetermined composition is carried out through the reaction gas supply port 5 provided at the upper end of the processing chamber 3. By exhausting the inside of the processing chamber 3 through the exhaust port 9 while supplying gas, the reaction gas is circulated in the axial direction inside the processing chamber 3, and a plurality of objects to be processed are A thin film made of a predetermined substance is deposited on the surface of 14.
そして、表面に所定の物質の薄膜などが形成された被処
理物１４は、ローダ１５によって蓋体１２および治具１
３を処理室３の軸方向に降下させることにより外部に搬
出され、未処理の被処理物１４が治具１３に装着されて
処理室３の内部に挿入される。The workpiece 14, on which a thin film of a predetermined substance is formed, is loaded onto the lid 12 and the jig 1 by the loader 15.
3 is lowered in the axial direction of the processing chamber 3 and carried out to the outside, and the unprocessed object 14 is attached to the jig 13 and inserted into the processing chamber 3 .
上記の一連の操作を繰り返すことにより、多数の被処理
物１４の表面に所定の物質からなる薄膜を被着形成する
作業が行われる。By repeating the above series of operations, a thin film made of a predetermined substance is deposited on the surfaces of a large number of objects 14 to be processed.
ここで、反応ガスの熱分解などによって被処理物１４の
表面に被着される物質は、同時に処理室３の内壁面など
にも堆積され、処理室３の内部における異物発生の原因
となるため、該処理室３を定期的に取り外して内部を洗
浄するなどの保守作業が必要となるが、本実施例の加熱
処理装置における保守作業は、次のように行われる。Here, substances deposited on the surface of the object to be processed 14 due to thermal decomposition of the reaction gas, etc. are also deposited on the inner wall surface of the processing chamber 3 at the same time, causing foreign matter to be generated inside the processing chamber 3. Although maintenance work such as periodically removing the processing chamber 3 and cleaning the inside is required, the maintenance work on the heat processing apparatus of this embodiment is performed as follows.
まず、蓋体１２および治具１３などが降下され、外部に
取り除かれる。First, the lid 12, jig 13, etc. are lowered and removed to the outside.
次に、反応ガス供給口５に接続される配管６、および排
気口９に接続される配管１０において、加熱体２の下端
部近傍の比較的低い位置にある管継手部８および管継手
部１１がそれぞれ取り外される。Next, in the piping 6 connected to the reaction gas supply port 5 and the piping 10 connected to the exhaust port 9, a pipe joint part 8 and a pipe joint part 11 located at a relatively low position near the lower end of the heating element 2 are connected. are removed respectively.
その後、ステージ１の昇降機構１６を作動させることに
よって、該ステージ１に固定された加熱体２および処理
室３が比較的低い位置に降下される。Thereafter, by operating the elevating mechanism 16 of the stage 1, the heating body 2 and the processing chamber 3 fixed to the stage 1 are lowered to a relatively low position.
そして、降下された処理室３の上端部における配管６の
管継手部７が、たとえば高い作業台などを用いることな
く、比較的低い位置で作業性良く、安全に取り外され、
さらに、処理室３の下端部をステージ１の底部に固定し
ている接続具４が取り外された後、昇降機構１６によっ
てステージ１および加熱体２が上昇される。Then, the pipe joint 7 of the pipe 6 at the upper end of the lowered processing chamber 3 is removed safely and with good workability at a relatively low position, without using a high workbench or the like.
Furthermore, after the connector 4 fixing the lower end of the processing chamber 3 to the bottom of the stage 1 is removed, the stage 1 and the heating body 2 are raised by the lifting mechanism 16.
次に、処理室３が外部に取り除かれ、洗浄済みの清浄な
処理室３が上昇されている加熱体２の直下に位置された
後、昇降機構１６によってステージｌおよび加熱体２が
降下され、該加熱体２の内部軸方向に処理室３が挿通さ
れる。Next, the processing chamber 3 is removed to the outside, and after the cleaned and cleaned processing chamber 3 is positioned directly below the elevated heating element 2, the stage 1 and the heating element 2 are lowered by the elevating mechanism 16. A processing chamber 3 is inserted through the heating body 2 in the internal axial direction.
そして、処理室３の上端部における反応ガス供給口５と
配管６のとの管継手部７が、前記の取り外し作業の場合
と同様に、比較的低い位置で作業性良く、安全かつ確実
に接続され、さらに、処理室３の下端部が接続具４によ
ってステージ１の下面に固定された後、昇降機構１６に
よってステージ１は加熱体２および処理室３とともに所
定の高さに上昇されて固定される。Then, the pipe joint 7 between the reactant gas supply port 5 and the pipe 6 at the upper end of the processing chamber 3 is connected safely and reliably at a relatively low position with good workability, as in the case of the removal work described above. Further, after the lower end of the processing chamber 3 is fixed to the lower surface of the stage 1 by the connector 4, the stage 1 is raised and fixed together with the heating body 2 and the processing chamber 3 to a predetermined height by the elevating mechanism 16. Ru.
その後、反応ガス供給口５に接続される配管６および排
気口９に接続される配管１０の、加熱体２の下端部近傍
の比較的低い位置にある管継手部８および管継手部１１
がそれぞれ接続され、熱処理装置が稼働可能な状態に迅
速に復帰される。Thereafter, a pipe joint 8 and a pipe joint 11 of the pipe 6 connected to the reaction gas supply port 5 and the pipe 10 connected to the exhaust port 9 are located at a relatively low position near the lower end of the heating element 2.
are connected to each other, and the heat treatment equipment is quickly returned to an operational state.
このように、本実施例においては以下の効果を得ること
ができる。In this way, the following effects can be obtained in this embodiment.
（１）、処理室３を所定の温度に加熱する加熱体２を支
持するステージ１に昇降機構１６が設けられ、加熱体２
が昇降自在な構造であるため、たとえば、処理室３の交
換などの保守作業に際して行われる該処理室３の上端部
における反応ガス供給口５と配管６とを接続する管継手
部７の着脱を、加熱体２および処理室３を降下させるこ
とにより、比較的低い位置で作業性良く安全に行うこと
ができる。(1) A lifting mechanism 16 is provided on the stage 1 that supports the heating body 2 that heats the processing chamber 3 to a predetermined temperature, and the heating body 2
Since it has a structure that can be raised and lowered freely, it is easy to attach and detach the pipe joint 7 that connects the reactant gas supply port 5 and the piping 6 at the upper end of the processing chamber 3 during maintenance work such as replacing the processing chamber 3, for example. By lowering the heating body 2 and the processing chamber 3, the work can be performed safely and efficiently at a relatively low position.
（２）、前記［１１の結果、処理室３の上端部における
反応ガス供給口５と配管６とを接続する管継手部７の着
脱が、迅速かつ確実に行われ、保守作業に要する時間の
短縮および、管継手部７の接続不良などに起因するガス
漏れ事故の防止が可能となる。(2) As a result of [11] above, the pipe joint 7 that connects the reactant gas supply port 5 and the pipe 6 at the upper end of the processing chamber 3 can be quickly and reliably attached and detached, reducing the time required for maintenance work. It is possible to shorten the length and prevent gas leakage accidents caused by poor connection of the pipe joint 7.
（３）、前記＋１１． ＋２１の結果、単位時間当たり
に処理される半導体ウェハなどの被処理物１４の数量が
増加され、半導体装置の製造における製造原価が低減さ
れる。(3), above +11. As a result of +21, the number of objects 14 to be processed, such as semiconductor wafers, processed per unit time is increased, and manufacturing costs in manufacturing semiconductor devices are reduced.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。たとえば、昇降機構とし
ては、送りねじなどを使用するものに限らず、いかなる
機構であってもよく、さらに、処理室の上下両端部にお
ける反応ガス供給口と排気口の位置が逆であってもよい
。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, the elevating mechanism is not limited to one that uses a feed screw or the like, and may be any mechanism, and even if the positions of the reaction gas supply port and exhaust port at the upper and lower ends of the processing chamber are reversed. good.
また、処理室の軸は、鉛直方向に限らず、傾斜されてい
てもよい。Further, the axis of the processing chamber is not limited to the vertical direction, but may be inclined.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体ウェハの膜形
成処理に適用した場合について説明したが、それに限定
されるものではなく、被処理物を加熱することによって
所定の処理を行う技術などに広く適用できる。In the above explanation, the invention made by the present inventor was mainly applied to film formation processing of semiconductor wafers, which is the background field of application, but the invention is not limited to this. By doing so, it can be widely applied to technologies that perform predetermined processing.
［発明の効果］
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記の通りである
。[Effects of the Invention] The effects obtained by typical inventions disclosed in this application are briefly described below.
すなわち、処理室の周囲に配設された加熱体によって該
処理室内に位置される被処理物を加熱する縦型の熱処理
装置で、前記加熱体を昇降させる昇降機構を有する構造
であるため、たとえば、保守点検などの目的で処理室を
加熱体から抜き出す作業に際して、一端、加熱体を処理
室とともに降下させることにより、該処理室の上端部に
接続されている配管の着脱などを比較的低い位置で作業
性良くかつ安全に行うことができ、保守作業などにおけ
る作業性および安全性の向上、さらには作業時間の短縮
を実現することができる。That is, it is a vertical heat treatment apparatus that heats an object to be processed located in the processing chamber by a heating body disposed around the processing chamber, and has a structure that has a lifting mechanism for raising and lowering the heating body. When removing the processing chamber from the heating element for purposes such as maintenance and inspection, by lowering the heating element together with the processing chamber, the piping connected to the upper end of the processing chamber can be connected to and removed from a relatively low position. It is possible to perform the work with good efficiency and safety, and it is possible to improve the workability and safety in maintenance work, etc., and also to shorten the work time.
第１図は、本発明の一実施例である熱処理装置の要部を
示す説明図である。
１・・・ステージ、２・・・加熱体、３・・・処理室、
４・・・接続具、５・・・反応ガス供給口、６・・・配
管、７．８・・・管継手部、９・・・排気口、１０・・
・配管、１１・・・管継手部、１２・・・蓋体、１３・
・・治具、１４・・・被処理物、１５・・・ローダ、１
６・・・昇降機構、１６ａ、１６ｂ−送りねじ、１６ｃ
・・・駆動機構、１６ｄ・・・歯車機構。FIG. 1 is an explanatory diagram showing the main parts of a heat treatment apparatus that is an embodiment of the present invention. 1... Stage, 2... Heating body, 3... Processing chamber,
4... Connector, 5... Reaction gas supply port, 6... Piping, 7.8... Pipe joint part, 9... Exhaust port, 10...
・Piping, 11... Pipe joint part, 12... Lid body, 13.
...Jig, 14...Workpiece, 15...Loader, 1
6... Lifting mechanism, 16a, 16b-Feed screw, 16c
... Drive mechanism, 16d... Gear mechanism.
Claims (1)
内に収容された被処理物を加熱する縦型の熱処理装置で
あって、前記加熱体を昇降させる昇降機構を有すること
を特徴とする熱処理装置。 ２、前記被処理物が半導体ウェハであり、前記熱処理装
置が、縦型化学気相成長装置または縦型拡散装置である
ことを特徴とする特許請求の範囲第１項記載の熱処理装
置。[Scope of Claims] 1. A vertical heat treatment apparatus that heats an object to be processed stored in the processing chamber by a heating body disposed around the processing chamber, the lifting mechanism for raising and lowering the heating body. A heat treatment apparatus characterized by having: 2. The heat treatment apparatus according to claim 1, wherein the object to be processed is a semiconductor wafer, and the heat treatment apparatus is a vertical chemical vapor deposition apparatus or a vertical diffusion apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087928A JP2502977B2 (en) | 1986-04-18 | 1986-04-18 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087928A JP2502977B2 (en) | 1986-04-18 | 1986-04-18 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62245623A true JPS62245623A (en) | 1987-10-26 |
| JP2502977B2 JP2502977B2 (en) | 1996-05-29 |
Family
ID=13928576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61087928A Expired - Fee Related JP2502977B2 (en) | 1986-04-18 | 1986-04-18 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2502977B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133728U (en) * | 1988-03-07 | 1989-09-12 | ||
| US5016567A (en) * | 1988-08-26 | 1991-05-21 | Tel Sagami Limited | Apparatus for treatment using gas |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109219A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Gas-phase reaction device |
| JPS60149130U (en) * | 1984-03-14 | 1985-10-03 | 三洋電機株式会社 | Semiconductor heat treatment furnace |
| JPS61247685A (en) * | 1985-04-26 | 1986-11-04 | Hitachi Ltd | Device for vapor growth of organometallic compound |
-
1986
- 1986-04-18 JP JP61087928A patent/JP2502977B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109219A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Gas-phase reaction device |
| JPS60149130U (en) * | 1984-03-14 | 1985-10-03 | 三洋電機株式会社 | Semiconductor heat treatment furnace |
| JPS61247685A (en) * | 1985-04-26 | 1986-11-04 | Hitachi Ltd | Device for vapor growth of organometallic compound |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133728U (en) * | 1988-03-07 | 1989-09-12 | ||
| US5016567A (en) * | 1988-08-26 | 1991-05-21 | Tel Sagami Limited | Apparatus for treatment using gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2502977B2 (en) | 1996-05-29 |
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