JPS62230983A - Thin film producing device - Google Patents
Thin film producing deviceInfo
- Publication number
- JPS62230983A JPS62230983A JP7459886A JP7459886A JPS62230983A JP S62230983 A JPS62230983 A JP S62230983A JP 7459886 A JP7459886 A JP 7459886A JP 7459886 A JP7459886 A JP 7459886A JP S62230983 A JPS62230983 A JP S62230983A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- film
- substrate
- chambers
- central differential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims abstract description 29
- 238000005086 pumping Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 abstract description 8
- 238000005192 partition Methods 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、プラズマＣＶＤ、光ＣＶＤ、スパッタリング
、蒸着その他の気相処理工程を経てフィルム状長尺基板
に連続的に薄膜を成膜して行く薄膜製造装置に関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a method for continuously forming a thin film on a film-like elongated substrate through plasma CVD, photoCVD, sputtering, vapor deposition, or other gas phase processing steps. This article relates to thin film manufacturing equipment.
［従来の技術］
フィルム状長尺基板に成膜する装置は、一般にロールツ
ウロール（Ｒｏｌｌ ｔｏ Ｒｏｌｌ）と呼ばれている
。この装置は、第４図に示すように、送給ロールＲ１か
ら連続的に縁り出されるフィルム状基板ＦＢを、直列に
接続した反応室Ｃ，−０Ｍ内に通し各反応室Ｃで順次成
膜した後、これを巻取ロールＲ１で巻き取るようにした
ものである。そして、この種の成膜装置では、各反応室
Ｃ毎に使用する雰囲気ガスの種類や室圧等の条件が異な
るため、反応室相互間でのガスの混入を防止する目的か
ら各反応室Ｃの間にその隣設するもの同士を圧力的に仕
切る中間室（差動排気室）１１〜Ｉ ｎｉｌを設けるの
が通例となっている。つまり、各中間電工はその両側の
反応室Ｃよりも低圧に保持されて差動排気し、反応室相
互間でのコンタミネーシ町ンを有効に防止する。[Prior Art] An apparatus for forming a film on a long film-like substrate is generally called a roll-to-roll. As shown in FIG. 4, this device passes the film-like substrate FB, which is continuously edged out from the feed roll R1, into reaction chambers C and -0M connected in series, and is sequentially formed in each reaction chamber C. After forming a film, it is wound up with a winding roll R1. In this type of film forming apparatus, since the conditions such as the type of atmospheric gas used and the chamber pressure are different for each reaction chamber C, each reaction chamber C is It is customary to provide intermediate chambers (differential pumping chambers) 11 to I nil between them, which pressure-wise partition the adjacent ones. That is, each intermediate electrician is maintained at a lower pressure than the reaction chambers C on both sides thereof and is differentially pumped out, thereby effectively preventing contamination between the reaction chambers.
［発明が解決しようとする問題点］
しかし、上記の従来装置によると１次のような不具合が
問題点として列挙される。すなわち、（ｉ）装置全長が
長く、占有床面積が大きいこと、（ｉｉ）独立した多数
の中間室を必要とし、それら個別に排気装置を付設しな
ければならないこと、（ｉｉｉ）一つの反応室について
機構（例えば電極長さ等）をスケールアップする場合で
も、装置全体の分解、再組立を必要とするケースが殆ど
で、多大の費用と時間を要すること、
いマ）装置全体が長尺化することに伴ない加熱ヒータに
よる熱膨張の問題も無視できなくなり、そのために反応
室内外を冷却するとＣＶＤ工程などの成膜上に不都合を
来たすこと、
などである。[Problems to be Solved by the Invention] However, with the above-mentioned conventional device, the following problems are enumerated as problems. That is, (i) the overall length of the device is long and the occupied floor space is large; (ii) a large number of independent intermediate chambers are required, each of which must be individually equipped with an exhaust system; and (iii) one reaction chamber. Even when scaling up the mechanism (for example, electrode length, etc.), in most cases it is necessary to disassemble and reassemble the entire device, which requires a large amount of cost and time. As a result, the problem of thermal expansion caused by the heater cannot be ignored, and cooling the inside and outside of the reaction chamber for this reason causes problems in film formation in the CVD process, etc.
本発明は、かかる従来装置における問題点を一挙に解決
することができる全く新しい構造の薄膜製造装置を提供
しようとするものである。The present invention aims to provide a thin film manufacturing apparatus with a completely new structure that can solve the problems of the conventional apparatus at once.
［問題点を解決するための手段］
本発明が、フィルム状長尺基板に対する成膜装置として
新たに提唱するものは、中央差動排気室と、この中央差
動排気室のまわりに配置されるとともにフィルム状基板
を巻掛し該フィルム状基板にその上で成膜する成膜ロー
ルを内設した適数個の反応室と、この各反応室と前記中
央差動排気室とに画室の差動排気孔を兼ねて前記フィル
ム状基板を通すスリットとを備えてなることを特徴とし
ている。[Means for Solving the Problems] The present invention newly proposes a film forming apparatus for film-like long substrates. an appropriate number of reaction chambers each having a film-forming roll on which a film-like substrate is wound and a film is formed thereon; and a compartment difference between each of the reaction chambers and the central differential exhaust chamber. It is characterized by comprising a slit which also serves as a dynamic exhaust hole and through which the film-like substrate is passed.
［作用］
上記構成であると、その中央差動排気室から周囲の反応
室にスリットを通してフィルム状基板を導き、これを成
膜ロールに巻掛してからスリットを通して再び中央差動
排気室に導き出すようにすれば、そのスリットを通して
反応室から中央差動排気室への差動排気が確保できると
同時に、反応室内の成膜ロール上でフィルム状基板に成
膜することができる。したがって、その中央差動排気室
を交互に経由してフィルム状基板を順次周囲の反応室に
通過させるようにすれば、該中央差動排気室を共通の排
気室として、フィルム状基板に連続的に成膜することが
できる。[Operation] With the above configuration, the film-like substrate is guided from the central differential pumping chamber to the surrounding reaction chamber through a slit, wound around a film forming roll, and then guided through the slit to the central differential pumping chamber again. By doing so, differential pumping from the reaction chamber to the central differential pumping chamber can be ensured through the slit, and at the same time, a film can be formed on the film-like substrate on the film-forming roll in the reaction chamber. Therefore, if the film-like substrates are made to pass through the central differential pumping chambers alternately to the surrounding reaction chambers, the film-like substrates can be continuously passed through the central differential pumping chambers as a common pumping chamber. can be formed into a film.
［実施例］
以下、図示の一実施例に基いて本発明をより具体的に説
明する。[Example] Hereinafter, the present invention will be described in more detail based on an illustrated example.
第１図と第２図は、本発明に係るプラズマＣｖＤ薄膜製
造装置を一部省略して図示するもので、この装置は、単
一の中央差動排気室ｌと、この中央差動排気室ｌのまわ
りに独立して配置された取入室２、洗浄室３１反応室４
工、４■、４■および取出室５と、これら周囲の各室と
前記中央差動排気室１との接合部に設けられたスリット
６・・・と、その他の付帯機構とから構成されている。1 and 2 partially omit illustrations of a plasma CVD thin film manufacturing apparatus according to the present invention, and this apparatus consists of a single central differential pumping chamber l, and this central differential pumping chamber Intake chamber 2, washing chamber 31 and reaction chamber 4 independently arranged around l.
It is composed of a slit 6 provided at the joint between each of the surrounding chambers and the central differential exhaust chamber 1, and other incidental mechanisms. There is.
前記中央差動排気室１は、外周にフラットな平面を有す
る断面角形のものに形成され、少なくとも三面以上、こ
の場合大面の等しいチャンバ取付面１ａ〜１ｆを有する
。そして、この中央差動排気室１は、内部がさらに中央
配管７と放射状隔壁８とで気密に仕切られ、真空度の異
なる五つの分割排気室ＩＡ〜ＩＥに構成されている。な
お、この中央差動排気室１の下方部に図示されない真空
ポンプ、配管等の必要な真空排気装置が配設されており
、この排気装置で分割排気室ＩＡ−ＩＨにそれぞれ所定
の排気圧が設定される。The central differential exhaust chamber 1 is formed to have a rectangular cross section with a flat surface on the outer periphery, and has at least three or more, in this case large, equal chamber mounting surfaces 1a to 1f. The interior of the central differential exhaust chamber 1 is further airtightly partitioned by a central pipe 7 and radial partition walls 8, and is configured into five divided exhaust chambers IA to IE having different degrees of vacuum. A necessary evacuation device such as a vacuum pump and piping (not shown) is provided below the central differential evacuation chamber 1, and this evacuation device applies a predetermined exhaust pressure to each of the divided evacuation chambers IA to IH. Set.
そして、この中央差動排気室１のまわりに第１〜第３反
応室４Ｉ〜４ｍを、余の前記王室と共に配置している。The first to third reaction chambers 4I to 4m are arranged around the central differential exhaust chamber 1 along with the remaining royal chambers.
これら計六室の反応室等は、いずれもその基板部９を前
記中央差動排気室１のチャンバ取付面１ａ〜１ｆに固着
して接合されているとともに、その外方開口部に開閉可
能な扉１０を蓋着して内部を気密構造にしたものである
。そして、中央差動排気室ｌに対して反時計まわりに。These six reaction chambers, etc., have their substrate parts 9 fixedly connected to the chamber mounting surfaces 1a to 1f of the central differential pumping chamber 1, and can be opened and closed at their outer openings. The door 10 is covered and the inside is made airtight. and counterclockwise with respect to the central differential exhaust chamber l.
取入室２．洗浄室３．第１反応室４工、第２反応室４
ＩＩ、第３反応室４ｍおよび取出室５を順に配置してい
る。Intake room 2. Washing room 3. 1st reaction chamber 4, 2nd reaction chamber 4
II, the third reaction chamber 4m, and the extraction chamber 5 are arranged in this order.
前記取入室２は、その内部にフィルム状基板ＦＢを巻回
した送給ロール１１を所定の支軸まわりで回転自由に設
けてなる。The intake chamber 2 is provided with a feed roll 11 having a film-like substrate FB wound therein, which is freely rotatable around a predetermined support shaft.
また、前記洗浄室３および前記反応室４１〜４■は共通
の内部構造を有する。すなわち、これら各室の内部には
、フィルム状基板ＦＢを加熱する適宜の加熱機構（ヒー
タ）Ｈを内蔵し、その上で該フィルム状基板ＦＢに成膜
又は洗浄をする成膜ロール１２を所定の支軸まわりで回
転可能に設けているとともに、その扉１０側から突設さ
れるプラズマ励起用のＲＦ電極１４を該成膜ロール１２
と同心に沿設して近接配置している。このＲＦ＠極１４
の円弧長さは、各反応室４Ｉ〜４■における成膜時間、
成膜速度に対応して各室毎に決定される。そして、扉１
０の外側に必要なマツチングボックス１５を付設してお
り、図示の如くチャン八側方に設けたヒンジ１６を支点
に旋回アーム１７で開閉される扉１０と一体に該ボック
ス１５が移動し、さらに扉１０の開放に連動して前記電
極１４が成膜ロール１２から離反して退避する構造とな
っている。これらの洗浄室３および反応室４工〜４■に
は、それぞれ必要な雰囲気ガスが所定の負圧で封入され
、まず洗浄室３の成膜ロール１２上でフィルム状基板Ｆ
Ｂをスパッタリングして表面を清浄化した後１反応室４
工〜４■の成膜ロール１２上でプラズマＣＶＤによりフ
ィルム状基板ＦＢに順次薄膜を被覆して行く。Further, the cleaning chamber 3 and the reaction chambers 41 to 4 have a common internal structure. That is, an appropriate heating mechanism (heater) H for heating the film-like substrate FB is built inside each of these chambers, and a film-forming roll 12 for forming a film or cleaning the film-like substrate FB is placed thereon in a predetermined manner. The film-forming roll 12 is provided with an RF electrode 14 for plasma excitation that is rotatable around a spindle of the film-forming roll 12 and protrudes from the door 10 side.
They are placed concentrically and close to each other. This RF @ pole 14
The arc length is the film forming time in each reaction chamber 4I to 4■,
It is determined for each chamber in accordance with the film formation rate. And door 1
A necessary matching box 15 is attached to the outside of the box 0, and as shown in the figure, the box 15 moves together with the door 10, which is opened and closed by a swing arm 17, using a hinge 16 provided on the side of the box 8 as a fulcrum. Furthermore, the structure is such that the electrode 14 separates from the film-forming roll 12 and retreats in conjunction with the opening of the door 10. The cleaning chamber 3 and the reaction chambers 4 to 4■ are each filled with necessary atmospheric gas at a predetermined negative pressure.
After sputtering B and cleaning the surface, 1 reaction chamber 4
Thin films are sequentially coated on the film-like substrate FB by plasma CVD on the film-forming roll 12 of Steps to 4).
なお、この実施例の場合、図示省略しているが、その第
１反応室４工と第３反応室４ｍでは円弧状ＲＦ主電極４
を短くし、第２反応室４ ＩＩではそれを長ぐするよう
にする。また、反応室等に内設される各成膜ロール１２
は遊転させてもよいし、必要ならばフィルム状基板ＦＢ
を送るためその回転軸１２ａから回転駆動するようにし
てもよい。In the case of this embodiment, although not shown, the arc-shaped RF main electrode 4 is provided in the first reaction chamber 4 and the third reaction chamber 4m.
is made shorter, and made longer in the second reaction chamber 4 II. In addition, each film forming roll 12 installed inside the reaction chamber etc.
may be freely rotated, or if necessary, the film-like substrate FB
It may also be rotated from its rotating shaft 12a in order to send it.
ざらに前記取出室５は、その内部にフィルム状基板ＦＢ
を巻取る巻取ロール１３を所定の支軸まわりに回転駆動
可能に設けてなるものである。Roughly, the extraction chamber 5 has a film-like substrate FB inside it.
A take-up roll 13 for winding up is rotatably provided around a predetermined support shaft.
このようにして、中央差動排気室ｌのまわりに反応室等
を配置しているとともに、各室と中央差動排気室１との
接合部に、フィルム状基板ＦＢを通すための微小な隙間
を有する前記のスリット６・・・をそれぞれ−又は二個
所づつ設けている。この各スリット６は、その隙間にフ
ィルム状基板ＦＢを通すと該基板ＦＢの両側に各室と中
央差動排気室ｌとを連通ずる非常に狭い間隙が形成され
、この間隙を各室から中央差動排気室１に向けて一方向
に排気するための差動排気孔１８に兼用するものとなっ
ている。In this way, the reaction chambers etc. are arranged around the central differential exhaust chamber 1, and a minute gap is created at the joint between each chamber and the central differential exhaust chamber 1 for passing the film-like substrate FB. The above-mentioned slits 6 . . . each have one or two slits. When the film-like substrate FB is passed through each slit 6, a very narrow gap is formed on both sides of the substrate FB that communicates each chamber with the central differential pumping chamber l, and this gap is connected from each chamber to the center. It also serves as a differential exhaust hole 18 for unidirectionally exhausting air toward the differential exhaust chamber 1.
以上の要素の他、この成膜装置では、中央差動排気室１
における各分割排気室の内部と、そのまわりに配置され
た各室の内部とに、フィルム状基板ＦＢを位置決めして
案内するためのガイドローラー１９．２０を配置してい
る。なお、これらのローラー１９．２０は、フィルム状
基板ＦＢの移動速度検出用にも利用でき１例えばその一
部で検出した移動速度を取出室５における巻取ロール１
３の駆動部にフィードバックし、フィルム状基板ＦＢの
速度を一定に維持させるようにすることもできる。In addition to the above elements, this film forming apparatus also has a central differential pumping chamber 1.
Guide rollers 19 and 20 for positioning and guiding the film-like substrate FB are arranged inside each divided exhaust chamber and inside each chamber arranged around it. Note that these rollers 19 and 20 can also be used to detect the moving speed of the film-like substrate FB.
The speed of the film-like substrate FB can also be maintained constant by feeding back to the drive unit No. 3.
しかして、この装置によるとフィルム状長尺基板に対し
、次のようにして連続的に成膜することができる。According to this apparatus, a film can be continuously formed on a film-like long substrate in the following manner.
すなわち、取入室２にフィルム状基板ＦＢを多重に巻回
した送給ロール１１をセットし、該送給ロール１１から
繰り出したフィルム状基板ＦＢの一端部を、ガイドロー
ラー１９からスリット６を通して、まず中央差動排気室
１の分割排気室ＩＡに導入する。次いで、ここからガイ
ドローラー２０を経由しスリット６を通して洗浄室３内
に導き、一対のガイドローラー１９．１９で位置決めし
つつフィルム状基板ＦＢを成膜ロール１２に巻掛してか
ら、スリット６を通して今度は分割排気室ＩＢに導き出
すようにする。その後、同様にしてフィルム状基板ＦＢ
を各反応室でその成膜ロール１２に巻掛し乍ら１分割排
気室ＩＢ→第１反応室■→分割排気室ＩＣ＝第２反応室
ＩＩ−分割排気室ＩＤ−第３反応室ｍ→分割排気室ＩＥ
と通過させ、分割排気室ＩＥから最終的にフィルム状基
板ＦＢが導き出される取出室５で、巻取ロール１３に固
定する。かくして、巻取ロール１３に必要な巻取トルク
を付与しつつシステムＯＮすれば、送給ロール１１から
繰り出されるフィルム状基板ＦＢは洗浄室３で表面清浄
化された後、第１〜第３反応室４Ｉ〜４ｍでその成膜ロ
ール１２上を通過するさい対向ＲＦ主電極４との間のプ
ラズマＣＶＤで順次成膜されて行き、取出室５の巻取ロ
ール１３には一連の成膜工程を完了したフィルム状基板
ＦＢが連続的に巻き取られていく。That is, a feed roll 11 on which a film-like substrate FB is wound multiple times is set in the intake chamber 2, and one end of the film-like substrate FB fed out from the feed roll 11 is first passed through the slit 6 from the guide roller 19. It is introduced into the divided exhaust chamber IA of the central differential exhaust chamber 1. Next, the film substrate FB is guided from here through the slit 6 via the guide roller 20 into the cleaning chamber 3, and wound around the film forming roll 12 while being positioned by a pair of guide rollers 19 and 19, and then passed through the slit 6. This time, let it lead to the divided exhaust chamber IB. After that, in the same manner, the film-like substrate FB
is wound around the film-forming roll 12 in each reaction chamber, and one divided exhaust chamber IB→first reaction chamber ■→divided exhaust chamber IC=second reaction chamber II−divided exhaust chamber ID−third reaction chamber m→ Split exhaust chamber IE
The film-like substrate FB is fixed on the take-up roll 13 in the take-out chamber 5 from which the film-like substrate FB is finally taken out from the divided exhaust chamber IE. In this way, if the system is turned on while applying the necessary winding torque to the winding roll 13, the film-like substrate FB fed out from the feeding roll 11 is surface-cleaned in the cleaning chamber 3, and then subjected to the first to third reactions. When passing over the film forming roll 12 in the chambers 4I to 4m, a film is sequentially formed by plasma CVD between it and the opposing RF main electrode 4, and a series of film forming processes are performed on the take-up roll 13 in the take-out chamber 5. The completed film-like substrate FB is continuously wound up.
以上のような構成、作動を有するものであれば、従来の
ロールツウロールの抱えていた問題点を一挙に解決する
ことができる。つまり、実質的に−室の中央差動排気室
１のまわりに、反応室等の各室を集約することができる
から装置の占有面積は著しく削減できる。また、反応室
等は中央差動排気室ｌのみに結合され相互に独立してい
るから、その取り付け、分解作業が簡便に行なえ１例え
ばその−室をスケールアップするなどの設計変更も容易
となる。そして１反応室等と差動排気室とを直列に接続
する場合に顕著となる熱膨張歪の問題も無視できる。With the configuration and operation as described above, the problems of conventional roll-to-roll systems can be solved at once. In other words, since the reaction chambers and other chambers can be concentrated around the central differential exhaust chamber 1, which is essentially the negative chamber, the area occupied by the apparatus can be significantly reduced. In addition, since the reaction chambers are connected only to the central differential exhaust chamber 1 and are independent from each other, their installation and disassembly work can be easily performed, and design changes such as scaling up the chamber are also easy. . Furthermore, the problem of thermal expansion distortion that becomes noticeable when one reaction chamber or the like and the differential pumping chamber are connected in series can be ignored.
モして又１反応室４Ｉ〜４１等でのフィルム状基板ＦＢ
に対する成膜を該フィルム状基板ＦＢを巻掛する成膜ロ
ール１２上で行なわしめるようにしているため、これに
対応して円弧状電極１４等を利用すれば、嵩ばらずにそ
の電極長を有効に増大することができるし、また成膜ロ
ール１２に加熱機構Ｈを内蔵しているから、別に加熱手
段を室内に設けずども基板ＦＢを有効に加熱することが
できる。従って、これらによって反応室等の個々につい
て小型コンパクト化を図ることができる。Also, film-like substrate FB in reaction chambers 4I to 41, etc.
Since the film is formed on the film-forming roll 12 around which the film-like substrate FB is wound, if an arc-shaped electrode 14 or the like is used correspondingly, the length of the electrode can be shortened without increasing the bulk. In addition, since the heating mechanism H is built into the film forming roll 12, the substrate FB can be effectively heated without providing a separate heating means in the room. Therefore, each of the reaction chambers and the like can be made smaller and more compact.
本発明の好適なる実施例は、以上の通りであるが、変形
実施例等ついても以下に言及する。Preferred embodiments of the present invention have been described above, but modified embodiments will also be mentioned below.
まず、中央差動排気室に必要なチャンバ取付面の個数に
ついては、最低反応室が一室以上必要でこれに通常取入
室と取出室を要することから、三面以上で任意に増減す
ることができる。そして、反応室等をより多く増設した
い場合などには、例えば第３図に簡略図示するように、
第１図形式の装置ユニットを対にして配置し使用するこ
とも可能である。すなわち、この場合には、その一方に
取入室２と４個の反応室４１〜４■が設けられ。First, the number of chamber mounting surfaces required for the central differential pumping chamber can be increased or decreased arbitrarily to three or more surfaces, since at least one reaction chamber is required at least, and this usually requires an intake chamber and an extraction chamber. . If you want to add more reaction chambers, etc., for example, as shown in a simplified diagram in Figure 3,
It is also possible to arrange and use the apparatus units of the type shown in FIG. 1 in pairs. That is, in this case, the intake chamber 2 and four reaction chambers 41 to 4 are provided on one side.
他方に取出室５と４個の反応室４Ｖ〜４■が設けられて
いて、前記実施例と同様にフィルム状基板ＦＢが反応室
を順番に通過して取入室２から取出室ｉ側に送り出され
るようにしたものである。但しこの場合、第４反応室４
■から第５反応室４ｖへは両側ユニットに介装した真空
チャンバー２１内を移送されるようになっている。On the other side, a take-out chamber 5 and four reaction chambers 4V to 4■ are provided, and the film-like substrate FB passes through the reaction chambers in order and is sent from the take-in chamber 2 to the take-out chamber i side, as in the previous embodiment. It was designed so that However, in this case, the fourth reaction chamber 4
The liquid is transferred from (1) to the fifth reaction chamber 4v through a vacuum chamber 21 installed in both units.
また、前記実施例では、中央差動排気室を内部で分割し
て反応室等に対する差動排気を細分化して実施するよう
にしたが、かかる分割排気室は必ずしも設置する必要は
なく、簡便には中空単一の差動排気室に形成するように
してもよい、また、分割排気室を設置する場合でも、そ
の分割形式はその他極々にすることができる。そして、
フィルム状基板をその隔壁を通過させる必要がある場合
には、該隔壁に前記スリットを設けることもできる。し
かし、分割排気室を設ける場合では、いずれの形式でも
隣接する室相互間での差圧はごく小さくなるため、その
隔壁には強度を要しない薄い板材等が使用でき、真空シ
ールも別段要しないものとなる。Furthermore, in the above embodiment, the central differential exhaust chamber is internally divided to subdivide the differential exhaust to the reaction chambers, etc., but such a divided exhaust chamber does not necessarily need to be installed, and can be easily carried out. may be formed as a single hollow differential exhaust chamber, or even when a divided exhaust chamber is installed, the division format may be other extremes. and,
If it is necessary to allow the film-like substrate to pass through the partition wall, the slit may be provided in the partition wall. However, if a divided exhaust chamber is provided, the differential pressure between adjacent chambers will be very small in either type, so thin plates that do not require strength can be used for the partition walls, and vacuum seals are not required. Become something.
ざらに又、前記実施例ではフィルム状基板を差動排気室
と反応室等とに交互に通過させるようにしたが、例えば
差動排気を必要としない反応室同土間にフィルム状基板
を通す場合などでは１両室間でそれを直接移送させるよ
うにしてもよい、あるいは、このことは−室内に二つの
成膜工程を組み込むことによっても実現可能である。Furthermore, in the above embodiments, the film-like substrates were passed alternately through the differential pumping chamber and the reaction chamber, but for example, when the film-like substrates were passed through the dirt floor of the reaction chamber, which does not require differential pumping. For example, it may be possible to transfer it directly between the two chambers, or this can also be realized by incorporating two deposition steps within the chamber.
なお、その他フィルム状長尺基板の移送、案内機構等に
ついては、種々設計変更可能である。また、成膜手段と
してプラズマＣＶＤを例示したが、冒頭のように種々の
気相成膜法を利用することができる。In addition, various design changes can be made to the transfer and guide mechanism of the film-like long substrate, etc. Further, although plasma CVD has been illustrated as a film forming means, various vapor phase film forming methods can be used as mentioned at the beginning.
［発明の効果］
本発明は、以上に詳述した通り、装置が実質的−室の中
央差動排気室のまわりに反応室を配置して構成されるも
のであるため、従来のロールツウロールにおける諸問題
点を一挙に解決する薄膜製造？ｃ置を提供することがで
きたものである。[Effects of the Invention] As detailed above, the present invention is constructed by arranging the reaction chamber around the central differential pumping chamber, which is substantially the same as the conventional roll-to-roll device. Thin film manufacturing that solves all the problems at once? It was possible to provide a convenient location.
第１図は本発明の一実施例を示す装置の一部省略した平
面断面図であり、第２図は第１図の部分縦断面図である
。第３図は本発明の他の実施例を示す概略図である。第
４図は従来例を示す装置の概略図である。
１・・・中央差動排気室
１ａ〜１ｆ・・・チャンバ取付面
ＩＡ−ＩＥ・・・分割排気室
２・・・取入室、３・・・洗浄室、５・・・取出室４工
〜４■・・・反応室
６・・・スリット
１１・・・送本台ロール
１２・・・成膜ロール、 Ｈ・・・加熱機構（ヒータ）
１３・・・巻取ロール
１４・・・電極
１８・・・差動排気孔
ＦＢ・・・フィルム状基板FIG. 1 is a partially omitted plan sectional view of an apparatus showing an embodiment of the present invention, and FIG. 2 is a partial longitudinal sectional view of FIG. 1. FIG. 3 is a schematic diagram showing another embodiment of the present invention. FIG. 4 is a schematic diagram of a conventional device. 1...Central differential exhaust chamber 1a-1f...Chamber mounting surface IA-IE...Divided exhaust chamber 2...Intake chamber, 3...Cleaning chamber, 5...Takeout chamber 4 construction~ 4■...Reaction chamber 6...Slit 11...Transfer table roll 12...Film forming roll H...Heating mechanism (heater)
13... Winding roll 14... Electrode 18... Differential exhaust hole FB... Film-like substrate
Claims (1)
されるとともにフィルム状基板を巻掛し該フィルム状基
板にその上で成膜する成膜ロールを内設した適数個の反
応室と、この各反応室と前記中央差動排気室とに両室の
差動排気孔を兼ねて前記フィルム状基板を通すスリット
とを備えてなることを特徴とする薄膜製造装置。A suitable number of reactors each having a central differential pumping chamber and a film forming roll disposed around the central differential pumping chamber, which wraps around a film-like substrate and forms a film on the film-like substrate. 1. A thin film manufacturing apparatus, comprising a chamber, and a slit in each reaction chamber and the central differential exhaust chamber, which also serves as a differential exhaust hole for both chambers and allows the film-like substrate to pass through.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7459886A JPH062954B2 (en) | 1986-03-31 | 1986-03-31 | Thin film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7459886A JPH062954B2 (en) | 1986-03-31 | 1986-03-31 | Thin film manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62230983A true JPS62230983A (en) | 1987-10-09 |
| JPH062954B2 JPH062954B2 (en) | 1994-01-12 |
Family
ID=13551748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7459886A Expired - Fee Related JPH062954B2 (en) | 1986-03-31 | 1986-03-31 | Thin film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062954B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007009615A1 (en) * | 2007-02-26 | 2008-08-28 | Leybold Optics Gmbh | Vacuum coating apparatus for front surface of strip material has two process chambers containing process roller, connected by transfer chamber containing strip feed and strip winding rollers, rear surface of strip contacting all rollers |
| WO2010024187A1 (en) * | 2008-08-27 | 2010-03-04 | 株式会社神戸製鋼所 | Continuous film forming apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1593754B1 (en) * | 2002-12-26 | 2018-05-23 | Toppan Printing Co., Ltd. | Vacuum deposition apparatus and method of producing vapor-deposited film |
-
1986
- 1986-03-31 JP JP7459886A patent/JPH062954B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007009615A1 (en) * | 2007-02-26 | 2008-08-28 | Leybold Optics Gmbh | Vacuum coating apparatus for front surface of strip material has two process chambers containing process roller, connected by transfer chamber containing strip feed and strip winding rollers, rear surface of strip contacting all rollers |
| US20100215848A1 (en) * | 2007-02-26 | 2010-08-26 | Leybold Optics Gmbh | Vacuum treatment of strip-shaped substrates |
| US9297065B2 (en) | 2007-02-26 | 2016-03-29 | Leybold Optics Gmbh | Vacuum treatment of strip-shaped substrates |
| WO2010024187A1 (en) * | 2008-08-27 | 2010-03-04 | 株式会社神戸製鋼所 | Continuous film forming apparatus |
| US8821638B2 (en) | 2008-08-27 | 2014-09-02 | Kobe Steel, Ltd. | Continuous deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH062954B2 (en) | 1994-01-12 |
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