JPS62224019A - Manufacture of compound semiconductor thin film - Google Patents
Manufacture of compound semiconductor thin filmInfo
- Publication number
- JPS62224019A JPS62224019A JP6760986A JP6760986A JPS62224019A JP S62224019 A JPS62224019 A JP S62224019A JP 6760986 A JP6760986 A JP 6760986A JP 6760986 A JP6760986 A JP 6760986A JP S62224019 A JPS62224019 A JP S62224019A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ultraviolet light
- pattern
- substrate
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- -1 'MGα) Chemical class 0.000 description 1
- 101100002917 Caenorhabditis elegans ash-2 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- WLQSSCFYCXIQDZ-UHFFFAOYSA-N arsanyl Chemical compound [AsH2] WLQSSCFYCXIQDZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、化合物半導体薄膜を基板平面上で選択的に組
成の異なるように成長する製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a manufacturing method for growing compound semiconductor thin films with selectively different compositions on the plane of a substrate.
従来０Ｍ６ＣＶＤ法による化合物半導体薄膜の製造方法
は、■族元素の供給源として、トリメチルガリウム（’
！’ＭＧα）、トリメチルアルミニウム（ＴＭＡＪ）等
の有機金属化合物と、■族元素Ｑ供給源としてアルシン
（ＡｓＨｓ）等の水素化物等を１反応炉Ｏ中の加熱され
た基板上に流し、エピタキシャル改良させるものであっ
た。また、この成長中に、供給原料分子の分解波長に相
等する紫外光を照射することにより、光照射部分の結晶
組成は、照射しなβ部分の組成と異なることが知られて
いる。The conventional method for manufacturing compound semiconductor thin films using the 0M6CVD method uses trimethylgallium ('
! Organometallic compounds such as 'MGα), trimethylaluminum (TMAJ), and hydrides such as arsine (AsHs) as a group II element Q supply source are flowed onto a heated substrate in a reactor O for epitaxial improvement. It was something. Furthermore, it is known that by irradiating ultraviolet light corresponding to the decomposition wavelength of the feedstock molecules during this growth, the crystal composition of the irradiated portion is different from the composition of the non-irradiated β portion.
しかし前述Ｏ従来技術では、熱分解によるＭＯＣ’７Ｄ
法では基板平面上に均一な組成（Ｄ（と会物半導体薄膜
が成長するだけであり、乎面上に組成比を変えた構造を
製作するには、エツチング、再成長の工程？経なければ
ならないという問題点を有する。また、平面）、■組成
比を変えるためには。However, in the conventional technology mentioned above, MOC'7D due to thermal decomposition
In this method, only a semiconductor thin film with a uniform composition (D) is grown on the plane of the substrate, and in order to fabricate a structure with a different composition ratio on the plane, etching and regrowth steps must be performed. There is also the problem that the composition ratio cannot be changed.
紫外光照射を行なえばよいが、微細な形状パターンに光
照射を行なう場合、マスクからの出射光が、回折現象に
より、基板とでエッヂ０はやけたパターン状に、選択組
成成長してしまうという問題点を胃していた。Ultraviolet light irradiation can be used, but when light is irradiated onto a fine pattern, the light emitted from the mask grows selectively into a pattern with zero edges due to the diffraction phenomenon. I was worried about the problem.
そこで本情明はこのような問題点を解決するもので、そ
の目的とするところは、微細な形状であり且つ、境界に
おいて急峻に組成の変化する領域を基板平面に作成し得
る化合物半導体薄膜Ｑ成長方法を提供するところにある
。The purpose of the present invention is to solve these problems, and the purpose is to create a compound semiconductor thin film Q that has a fine shape and can create regions on the substrate plane where the composition changes sharply at the boundaries. It's about providing a way to grow.
本発明の化合物半導体薄膜の成長方法は有機金属化合物
を原料とするＭＯＣＶＤ法による化合物半導体薄膜Ｑ選
択的製造方法ＩＣおいて、前記有機金属化合物０いずれ
か■尤吸収領駿内にある紫外ｙｔ、源と該紫外光を平行
光線にする光学系と１選択的組成形成を行ない得るパタ
ーン状マスクと該マスクを透過した前記紫外光を成長基
板上に縮小投影する光学系を有するａ造装置によって１
選択的紫外光照射を縮小ｉｌ！元に行なうことを％微と
する。The method for growing a compound semiconductor thin film of the present invention is a method for selectively producing a compound semiconductor thin film Q by an MOCVD method using an organometallic compound as a raw material. 1. By means of an a-producing apparatus having a source, an optical system that converts the ultraviolet light into parallel light beams, a patterned mask capable of selectively forming a composition, and an optical system that reduces and projects the ultraviolet light transmitted through the mask onto a growth substrate.
Reduce selective ultraviolet light irradiation! The original thing to do is % fine.
本発明のと記の構成によれば、例えば、ＴＭＧαとＴＭ
ＪＪＱ吸収波長域にある紫外光で光照射を行なった部分
は、基板表面に飛来するＧαあるいは八！の社が、紫外
光の吸収度により異なり、このことにより薄膜内ＯＧα
とＡＩ／の組成比が、光を照射しない場合と異なる。従
って微細パターン状に紫外光照射を行ないながら、薄膜
成長を行なえば、微細パターン状に選択的に組成の異な
る領域が形成できるＯである。According to the configuration of the present invention, for example, TMGα and TM
The portions irradiated with ultraviolet light in the JJQ absorption wavelength range are exposed to Gα or 8! that fly to the substrate surface. The amount of OGα in the thin film varies depending on the absorbance of ultraviolet light.
The composition ratio of and AI/ is different from that in the case where no light is irradiated. Therefore, if a thin film is grown while irradiating ultraviolet light in a fine pattern, regions with different compositions can be selectively formed in a fine pattern.
更に％紫外光の照射を縮小露光法により行なうことによ
り、パターン状マスクの線幅及びその間隔を大きくとる
ことができ、その結果、マスクを透過するときＱエッチ
による回折効果がなく、基板表面上に微細なパターン照
射及び境界における組成の急峻な変化が実現できるので
ある。Furthermore, by performing irradiation with ultraviolet light using a reduction exposure method, it is possible to increase the line width and spacing of the patterned mask, and as a result, there is no diffraction effect due to Q-etching when it passes through the mask, and there is no diffraction effect on the substrate surface. This makes it possible to achieve fine pattern irradiation and sharp changes in composition at boundaries.
第１図は本発明の実施列における化合物半導体薄膜の製
造方法における紫外光照射の基本構成図を示す、ＭＯＣ
ＶＤ装置における１１１の反応管中には、１１３の単結
晶基板が置かれ、１０１のエキシマ−レーザ光源から、
出射されたレーザ光１ｔ１０３，１０４のシリンドリカ
ルレンズによりのビーム形状を、正方形に近いものにす
る。１０５の誘電多１−膜で製造された反射鏡によって
、方向ヲ９０°曲げられ、１０６の凹レンズと１０７の
凸レンズにより、千行光線に変えられ、且つ、１０６と
１０７の距離により平行光線０拡がりは変換出来る。モ
行ｙｔ線は１０８のパターン状マスクを透過するが、マ
スクのスリット等の線幅は、 １０μｍ〜１００μｍ１
また。スリット間隔もｌＯμｍ〜１００μｍＯ長さに保
っである。エキシマ−レーザ光の波長は％ １９３０Ａ
あるいは２２２０Ａを用いるので、こ０マスクを透過し
た光のエッヂのぼけはほとんど無視できる。この１０９
の透過光Ｔｈ１ｌＯの縮小露光レンズにより集束し、１
１３の基板表面上に結像させる。１１０の縮小レンズに
より、パターン形状は、見〜殖に縮小されて、１１３の
基板上に結はできた。従ってマスクパターンの線幅１０
＃ｍ〜ｌｏＯμｍがｌμ７３〜ｌＵμｍＯ線幅で基板表
面上に照射でき、しかも回折効果による境界Ｏはけはｔ
ｌとんとない。FIG. 1 shows a basic configuration diagram of ultraviolet light irradiation in the method for manufacturing a compound semiconductor thin film in an embodiment of the present invention.
In the VD device, a single crystal substrate 113 is placed in a reaction tube 111, and an excimer laser light source 101 emits light from the excimer laser light source 101.
The beam shape of the emitted laser beams 1t103 and 104 by the cylindrical lens is made close to a square. The direction is bent by 90 degrees by the reflective mirror made of dielectric multi-film 105, and the parallel rays are transformed into a thousand line rays by the concave lens 106 and the convex lens 107, and the parallel rays have zero spread due to the distance between 106 and 107. can be converted. The yt line passes through a 108 patterned mask, but the line width of the slits, etc. in the mask is 10 μm to 100 μm1.
Also. The slit interval is also maintained at a length of 10 μm to 100 μm. The wavelength of excimer laser light is %1930A
Alternatively, since 2220A is used, the blurring of the edges of the light transmitted through the 0 mask can be almost ignored. This 109
The transmitted light Th11O is focused by a reduction exposure lens, and 1
The image is formed on the surface of the substrate No. 13. Using the reduction lens 110, the pattern shape was reduced to an approximate size and formed on the substrate 113. Therefore, the line width of the mask pattern is 10
#m~loOμm can be irradiated onto the substrate surface with a line width of lμ73~lUμmO, and the boundary O due to the diffraction effect is t
l It's outrageous.
第２図には１本発明による紫外光照射装置を含むＭＯＣ
ＶＤ装［）ｍ本１１１ＦＩＩｔ、−ｘス、 ２０８ Ｏ
反応管内には２１０のカーボンサセプター上に２０９０
亀結晶基板が設置されている、基板ｔ！２１１の高周波
電源とコイルにより°５００℃〜８００℃に加熱される
。２２０，２２１の有機金属化合物の蒸気は水素ガスを
キャリアとして、反応管中に導入される。ＡＩｋＧａＡ
ａ 系の化合物半導体Ｏ場合には、■族元素の原料と
してＴＭＧα、ＴＭＡＡ。FIG. 2 shows an MOC including an ultraviolet light irradiation device according to the present invention.
VD equipment [)m 111 FIIt, -x, 208 O
Inside the reaction tube, 2090 carbon susceptors were placed on 210 carbon susceptors.
Board t where the turtle crystal board is installed! It is heated to 500°C to 800°C by a 211 high frequency power source and coil. The vapors of the organometallic compounds Nos. 220 and 221 are introduced into the reaction tube using hydrogen gas as a carrier. AIkGaA
In the case of the a-based compound semiconductor O, TMGα and TMAA are used as the raw materials for group Ⅰ elements.
Ｖ族元素Ｏ原料としてＡｓＨ２を用いれば、エキシマ−
レーザの１９３０Å、２２２０Ｈの波長の発振光によっ
てＴＭＧα、ＴＭＡＪが光エネルギーによって分解され
るが、ＴＭＡＪの吸収係数が大であるため、基板表面上
ＯＡ！原子の数は％元照射しない部分に比較して大とな
る。従って薄膜中の八！の濃度は照射部で大となる０本
実施列の場合通常！７） ＡＡＧｃＬＡｌｌ の改良
条件において、Ａ７が１５チＧ、が８５チの混成比で形
成される条件において、２２２０Ａの紫外光照射部では
、Ａ７が２０俤、Ｇαが８０チの混成比で％ ｌ＃＃度
Ｑ高ｖｚ Ａ７Ｇα八８ 薄膜が形成可能であった。If AsH2 is used as a raw material for group V element O, excimer
TMGα and TMAJ are decomposed by the optical energy of the laser's oscillated light with wavelengths of 1930 Å and 2220 H, but since the absorption coefficient of TMAJ is large, OA! The number of atoms is larger than that in the non-irradiated area. Therefore eight in thin film! The concentration of is usually large in the irradiated area in the case of a 0 line implementation row! 7) Under the improved conditions of AAGcLAll, under the conditions where A7 is formed at a mixed ratio of 15 inches and Gα is formed at a mixed ratio of 85 inches, in the ultraviolet light irradiation section of 2220A, %l is formed at a mixture ratio of 20 inches of A7 and 80 inches of Gα. ## Degree Q height vz A7Gα88 A thin film could be formed.
ストライプ状（光照射した場合■境界における組成０急
峻性は良＾。Striped shape (when irradiated with light ■ The composition 0 steepness at the boundary is good.
本発明による製造方法によって、 Ａ、％、ｚａ５
導波路中に、レンズ形状１７）Ａｎ濃度の低い領域形成
でき、且つ、境界が急峻であるため、薄膜レンズの形成
が可能であった。また、半導体レーザの活性層形成中に
、本発明による製造方法によって、ストライプ状Ｏ電流
、光閉じ込め層が形成でき、亀−モード発振の低閾直レ
ーザが！Ｉ！！造可能であった。By the production method according to the present invention, A, %, za5
Lens shape 17) A region with low An concentration could be formed in the waveguide, and since the boundary was steep, it was possible to form a thin film lens. Furthermore, during the formation of the active layer of a semiconductor laser, the manufacturing method according to the present invention allows the formation of a stripe-shaped O current and optical confinement layer, resulting in a low-threshold direct laser with tortoise-mode oscillation! I! ! It was possible to build
以上述べたように本発明によれば、化合物半導体Ｎ膜の
千面上に組成比の異なる領域を、境界でだれがなく形成
可能であることにより、散乱損失０少なｔｎ薄嘆レンズ
の製造が可能であるという効果？有する。尚且つ、半導
体レーザＱ活性層を横方向から、電流光閉じ込めが可能
であり、モード制御された低閾儂半導体し−ザＱ製造が
可能であるという効果１に宵する。As described above, according to the present invention, it is possible to form regions with different composition ratios on the 1,000-plane surface of a compound semiconductor N film without any droop at the boundaries, thereby making it possible to manufacture a tn thinning lens with zero scattering loss. The effect of being possible? have In addition, effect 1 is achieved in that it is possible to confine current and light in the semiconductor laser Q active layer from the lateral direction, and it is possible to manufacture a mode-controlled low threshold semiconductor laser Q.
また、縮小露光することにより、基板長面とで０光強度
密度が増し、光による反応効率が冒く、組成比の違いが
大きな選択成長が可能であるという効果も胃する。In addition, reduction exposure increases the zero light intensity density on the long surface of the substrate, impairs the reaction efficiency due to light, and allows selective growth with large differences in composition ratio.
嘉１図は本発明の化合物子→体薄＠製造方法による光露
光装置Ｑ主要構成図である。
第２図は本発明０化会物半導体薄膜製造方法による製造
装［１ｉり主要購成図である。
１０２・・シャッター １０３０１０４・・シリンド１
０５・・反射鏡 リカルレンズ１０６・−
凹レンズ
１０７・・凸レンズ
１１２働−カーボンサセプター
２０１１エキシマ−レーザ
２０２ 、２０３・・シリンドリカルレンズ２０４−・
反射鏡 ２０５・・凹レンズ２０Ｇ・・凸レンズ ２０
７・・合成石英窓２０８・・反応炉 ２０９・・基板
２１０ｅ・カーボンサセプター
２１１・・高周波電源 ２１２〜２１９・・パルプ２２
０ 、２２１・・有限金属
２２２〜２２６０番マスフローコントローラー２２７〜
２２８・会ガスボンベ
２２９＠・ターボ分子ポンプ
２３０ 、２３１・・ロータリーポンプ２３２・・除害
Ｖｉ ｆｔ ２３３・・パターン状マスク２３４・・
縮小露光レンズ ２３５・・シャッター以 北
出願人 セイコーエグンｙｉ式会社
代理人 弁理士鏝 上 務池１名
ＩＩＩ／、”二斗シ７レープパ
第１図FIG. 1 is a main configuration diagram of a light exposure apparatus Q according to the compound particle→body thinning@ manufacturing method of the present invention. FIG. 2 is a main purchasing diagram of the manufacturing equipment [1i] according to the method for manufacturing a compound semiconductor thin film of the present invention. 102...Shutter 1030104...Cylinder 1
05... Reflector Rical Lens 106...
Concave lens 107... Convex lens 112 - Carbon susceptor 2011 Eximer laser 202, 203... Cylindrical lens 204...
Reflector 205...Concave lens 20G...Convex lens 20
7.Synthetic quartz window 208..Reactor 209..Substrate 210e.Carbon susceptor 211..High frequency power source 212-219..Pulp 22
0, 221...Limited Metals 222-2260 Mass Flow Controller 227-
228・Gas cylinder 229@・Turbo molecular pump 230, 231・・Rotary pump 232・・Harm removal Vi ft 233・・Patterned mask 234・・
Reduction exposure lens 235... From the shutter Applicant Seiko Egun YI type company agent Patent attorney Kami Mutsuike 1 person III
Claims (2)
下ＭＯＣＶＤ法と記す）による化合物半導体薄膜の選択
的製造方法において、前記有機金属化合物のいずれかの
光吸収領域内にある紫外光源と、該紫外光を平行光線に
する光学系と、選択的組成形成を行ない得るパターン状
マスクと、該マスクを透過した前記紫外光を成長基板上
に縮小投影する光学系を有する製造装置によって、選択
的紫外光照射を縮小露光により行なうことを特徴とする
化合物半導体薄膜の製造方法。(1) In a method for selectively producing a compound semiconductor thin film by a chemical vapor deposition method (hereinafter referred to as MOCVD method) using an organometallic compound as a raw material, an ultraviolet light source located within any light absorption region of the organometallic compound; , an optical system that converts the ultraviolet light into parallel light beams, a patterned mask capable of selectively forming a composition, and an optical system that reduces and projects the ultraviolet light transmitted through the mask onto a growth substrate. 1. A method for producing a compound semiconductor thin film, characterized in that targeted ultraviolet light irradiation is performed by reduction exposure.
振波長が１９３０Åあるいは２２２０Åであることを特
徴とする特許請求の範囲第１項記載の化合物半導体薄膜
の製造方法。(2) The method for manufacturing a compound semiconductor thin film according to claim 1, wherein the ultraviolet light source is an excimer laser whose oscillation wavelength is 1930 Å or 2220 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61067609A JPH07105348B2 (en) | 1986-03-26 | 1986-03-26 | (III) -Method for manufacturing Group V compound semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61067609A JPH07105348B2 (en) | 1986-03-26 | 1986-03-26 | (III) -Method for manufacturing Group V compound semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62224019A true JPS62224019A (en) | 1987-10-02 |
| JPH07105348B2 JPH07105348B2 (en) | 1995-11-13 |
Family
ID=13349847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61067609A Expired - Lifetime JPH07105348B2 (en) | 1986-03-26 | 1986-03-26 | (III) -Method for manufacturing Group V compound semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105348B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992523A (en) * | 1982-11-18 | 1984-05-28 | Nec Corp | Method for crystal growth |
| JPS59111322A (en) * | 1982-12-16 | 1984-06-27 | Agency Of Ind Science & Technol | Manufacture of thin-film |
| JPS6155927A (en) * | 1984-08-28 | 1986-03-20 | Toshiba Corp | Formation of pattern |
-
1986
- 1986-03-26 JP JP61067609A patent/JPH07105348B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992523A (en) * | 1982-11-18 | 1984-05-28 | Nec Corp | Method for crystal growth |
| JPS59111322A (en) * | 1982-12-16 | 1984-06-27 | Agency Of Ind Science & Technol | Manufacture of thin-film |
| JPS6155927A (en) * | 1984-08-28 | 1986-03-20 | Toshiba Corp | Formation of pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105348B2 (en) | 1995-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |