JPS62217245A - Low reflective photomask - Google Patents
Low reflective photomaskInfo
- Publication number
- JPS62217245A JPS62217245A JP61061285A JP6128586A JPS62217245A JP S62217245 A JPS62217245 A JP S62217245A JP 61061285 A JP61061285 A JP 61061285A JP 6128586 A JP6128586 A JP 6128586A JP S62217245 A JPS62217245 A JP S62217245A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- light
- layer
- pattern
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000006096 absorbing agent Substances 0.000 claims description 12
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 229910002804 graphite Inorganic materials 0.000 abstract description 8
- 239000010439 graphite Substances 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 3
- 231100000419 toxicity Toxicity 0.000 abstract description 3
- 230000001988 toxicity Effects 0.000 abstract description 3
- 230000002745 absorbent Effects 0.000 abstract 3
- 239000002250 absorbent Substances 0.000 abstract 3
- 231100000956 nontoxicity Toxicity 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 229910000423 chromium oxide Inorganic materials 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
透明基板上にグラファイトのパターンが形成され、該グ
ラファイトパターンの表面がダイヤモンドライクカーボ
ン層によってコーティングされた低反射フォトマスク、
このダイヤモンドライクカーボン層は、その表面からの
反射光とグラファイト１からの反射光が逆位相となる厚
さに設定されており、反射光を減殺すると共に放熱を改
善し、化学的１機械的強度を増す。[Detailed Description of the Invention] [Summary] A low-reflection photomask in which a graphite pattern is formed on a transparent substrate, and the surface of the graphite pattern is coated with a diamond-like carbon layer;
This diamond-like carbon layer is set to a thickness such that the light reflected from its surface and the light reflected from graphite 1 are in opposite phase, reducing the reflected light and improving heat dissipation, and has chemical and mechanical strength. increase.
本発明は半導体装置等の製造に使用されるフォトマスク
に関わり、特に光吸収体パターンからの反射を無くすよ
うに構成された低反射フォ］・マスクに関わる。The present invention relates to a photomask used in the manufacture of semiconductor devices and the like, and particularly to a low-reflection photomask configured to eliminate reflection from a light absorber pattern.
フォトマスクはガラス等の透明基板にりし１ムのような
不透明材料を被着し、これを所望のパターンに整形する
ことによって製作されるやクロム膜は６００人もあれば
通常光の透過率ははＶＱであるが、反射率は６０％位あ
り、ＡＩのように表面反射の強い膜のバターニングでは
、繰り返し反射を生じてパターンが不明確になることが
起こる。A photomask is manufactured by coating a transparent substrate such as glass with an opaque material such as a film and shaping it into the desired pattern. Although it is VQ, the reflectance is about 60%, and when patterning a film with strong surface reflection such as AI, repeated reflections occur and the pattern becomes unclear.
酸化クロム（ＣｒｚＣｈ）は、３００〜４００ ｎ ｍ
の光の透過率が低く、長波長の光に対して透明という特
徴があり、フォトマスク用の吸収体として使用されるこ
とがある。し力）し、水１艮ランプのｉ＋ｈ＋ｇ輝線ス
ペクトル付近の波長に対して若干の透過率を有し、フォ
トマスクを構成するには２０００〜３０００人の厚さが
必要である。また、反射率も２０〜３０％あって、光吸
収体として十分な特性を持つとは言い難い。Chromium oxide (CrzCh) is 300-400 nm
It has the characteristics of low light transmittance and transparency to long wavelength light, and is sometimes used as an absorber for photomasks. It has a slight transmittance for wavelengths near the i+h+g emission line spectrum of a water lamp, and requires a thickness of 2,000 to 3,000 layers to form a photomask. Further, the reflectance is 20 to 30%, and it is difficult to say that it has sufficient characteristics as a light absorber.
更に、酸化クロム膜の光透過性を利用して反射率を低下
させることも行われている。これは、クロムバクーンの
表面に酸化クロムを３００〜４００人の１γさにコーテ
ィングし、酸化クロム表面からの反射光と酸化クロム／
クロム層界面からの反射光とが互いに逆位相となるよう
にしたもので、両者の干渉により反射光を減殺するもの
である。Furthermore, the reflectance is lowered by utilizing the light transmittance of the chromium oxide film. This is achieved by coating the surface of chromium oxide with chromium oxide to a thickness of 300 to 400, and the reflected light from the chromium oxide surface and chromium oxide/
The reflected light from the chromium layer interface is made to have opposite phases to each other, and the reflected light is attenuated by interference between the two.
このようなマスクに使用されるクロムは有毒であり、作
業者の健康管理や産業廃棄物の処理等に問題が多い。The chromium used in such masks is toxic and poses many problems for worker health management and industrial waste disposal.
〔従来の技術］
フォトマスク用材料としては従来、クロム、酸化クロム
のほか酸化鉄のような材料も使用されており、これ等の
単層或いは複層が光吸収体として被着整形され、マスク
を形成する。より初歩的な構造のものではゼラチンにハ
ロゲン化銀を溶解し、感光によって還元した銀を光吸収
体とするものもあるが、微細パターンを取り扱うフォト
リソグラフィには適していない。[Prior Art] Conventionally, materials such as chromium, chromium oxide, and iron oxide have been used as materials for photomasks, and a single layer or multiple layers of these materials are deposited and shaped as a light absorber to form a mask. form. A more basic structure uses silver halide dissolved in gelatin and reduced by exposure to light as a light absorber, but this method is not suitable for photolithography, which deals with fine patterns.
低反射マスクも上記の如き酸化クロム／クロムの組み合
わせのものが大半を占める。The majority of low-reflection masks are made of a combination of chromium oxide/chromium as described above.
これ等マスク関係の技術の他に、本発明に関わる公知技
術として、ダイヤモンドライクカーボン或いはアモルフ
ァスダイヤモンドと呼ばれる皮膜の形成技術が挙げられ
る。In addition to these mask-related techniques, known techniques related to the present invention include a coating formation technique called diamond-like carbon or amorphous diamond.
これはマグネトロンスパッタリング、プラズマＣＶＤ、
イオンブレーティング等によって形成されるカーボン皮
膜であって、結晶構造上は明確なダイヤモンド格子では
ないが、熱伝導率や剛性率等の物理的性質がダイヤモン
ドに近く、耐薬品性に優れ、硬度も大で半遇明という材
料である。This is magnetron sputtering, plasma CVD,
It is a carbon film formed by ion blasting, etc., and although its crystal structure does not have a clear diamond lattice, its physical properties such as thermal conductivity and rigidity are close to those of diamond, and it has excellent chemical resistance and hardness. It is a large and half-sized material.
従来技術のようにクロムを使用すると、その毒性のため
、処理装置として大掛かりなものが必要となる。If chromium is used as in the prior art, large-scale processing equipment is required due to its toxicity.
その他にも、ドライエツチングによってパターンを形成
する場合、酸素の添加が必要であり、そのためフォトレ
ジストとクロムのエツチング速度差を十分にとれないと
いう問題がある。In addition, when forming a pattern by dry etching, it is necessary to add oxygen, which causes the problem that a sufficient difference in etching speed between the photoresist and chromium cannot be maintained.
更に、微細パターンのフォトマスクを作成するためＥＢ
ｎ光を行うと、通常の材料では熱放散が十分でなく、局
部的な温度上昇のためフォトレジストの変質が生じてパ
ターンが歪むことが起こる。Furthermore, EB is used to create a photomask with a fine pattern.
When n-light is used, heat dissipation is not sufficient with ordinary materials, and a localized temperature increase causes deterioration of the photoresist and distortion of the pattern.
本発明の目的は毒性のない材料を使用し、パターニング
が容易で、ＥＢｎ先に於ける部分的熱歪の生じない低反
射フォトマスクを提供することである。An object of the present invention is to provide a low-reflection photomask that uses non-toxic materials, is easy to pattern, and does not cause local thermal strain at the EBn tip.
上記目的は特許請求の範囲の項に記された本発明のフォ
トマスクによって達成されるものであるが、後出の実施
例に従って本発明を要約すると、光吸収体パターンの上
にダイヤモンドライクカーボン膜をコーティングするこ
とによって表面反射を減殺し、更に光吸収体としてグラ
ファイト状カーボンを使用することによって材料の毒性
の問題と加工性の問題を解決するものである。The above object is achieved by the photomask of the present invention as described in the claims section, but to summarize the present invention according to the examples described later, a diamond-like carbon film is formed on a light absorber pattern. The coating reduces surface reflection, and the use of graphitic carbon as a light absorber solves the problem of material toxicity and processability.
ダイヤモンドライクカーボン膜の厚さを制御することに
よって表面の反射を減することは、公知の低反射マスク
と同じ原理に基づくものであるが、ダイヤモンドライク
カーボンの熱伝導率が大きいため、ＩＥＢ露光に於いて
熱放散は十分行われ、局部的な温度上昇が抑えられるの
でフォトレジストの熱変化が起こらず、パターンが部分
的に変形することがない。Reducing surface reflection by controlling the thickness of the diamond-like carbon film is based on the same principle as known low-reflection masks, but due to the high thermal conductivity of diamond-like carbon, it is not suitable for IEB exposure. Heat dissipation is sufficient and local temperature increases are suppressed, so that thermal changes in the photoresist do not occur and the pattern does not become partially deformed.
また、この皮膜は耐薬品性に優れているので繰り返しの
洗浄に耐え、マスクの使用回数が増し、硬度も大である
ことからパターンの保護にも役立つ。Additionally, this film has excellent chemical resistance, so it can withstand repeated cleaning, increasing the number of times the mask can be used, and its high hardness also helps protect the pattern.
更に、光吸収体として使用されるグラファイト状カーボ
ンは毒性が無く、ドライエツチングによる加工が容易で
ある。Furthermore, the graphitic carbon used as the light absorber is non-toxic and can be easily processed by dry etching.
図は本発明のマスクの１実施例を示す模式断面図である
。The figure is a schematic cross-sectional view showing one embodiment of the mask of the present invention.
ガラス基板ｌの上にグラファイト層２のパター□
ンが形成され、その上にダイヤモンドライクカーボン膜
３が被着している。外面的な構造は従来の低反射マスク
に類憤しており、その構成材料が異なるものである。Putter of graphite layer 2 on glass substrate l □
A diamond-like carbon film 3 is deposited thereon. Its external structure is similar to that of conventional low-reflection masks, but its constituent materials are different.
グラファイト層は、３ ＬｏｒｒのＡｒ雰囲気中で直流
マグネトロンスパッタリングによって１０００人の厚さ
に被着される。その上のダイヤモンドライクカーボン膜
は、１０− ’ 〜１０− ” ｔｏｒｒのＡｒ＋Ｈ，
雰囲気で交流マグネトロンスパッタリングによって５０
０人の厚さに被着される。The graphite layer is deposited to a thickness of 1000 nm by direct current magnetron sputtering in an Ar atmosphere of 3 Lorr. The diamond-like carbon film on it is coated with Ar+H at 10-' to 10-'' torr.
50 by AC magnetron sputtering in atmosphere
Deposited to a thickness of 0.
これ等２層の皮膜を形成した後、フォＩ・レジストを塗
布し、Ｉ４ Ｂ露光によってマスクパターンが形成され
る。これ等の層のパターニングは０□プラズマＲＩＥの
ようなドライエツチングによって容易に実施し得るが、
クロムを含まないので処理装置が大掛かりなものになる
ことはない。After forming these two layers, a photo resist is applied and a mask pattern is formed by I4B exposure. Patterning of these layers can be easily carried out by dry etching such as 0□ plasma RIE;
Since it does not contain chromium, processing equipment does not need to be large-scale.
本発明のフォトマスクでは、無反射用コーティング皮膜
としてダイヤモンドライクカーボン膜を利用しているが
、その結果生ずる良好な放熱性、耐薬品性、高硬度とい
う特徴に着目するかぎり、光吸収体の材料は何であって
も同様の特徴を持つことになる。従って上記実施例は、
之に加えて有害材料不使用という特徴も備えるものであ
って、最も有用な実施例の一つと見るべきものである。In the photomask of the present invention, a diamond-like carbon film is used as the anti-reflection coating film. will have similar characteristics no matter what. Therefore, the above embodiment is
In addition to this, it also has the feature of not using harmful materials, and should be seen as one of the most useful embodiments.
以上説明したように、本発明の低反射フォトマスクは良
好な放熱性、耐薬品性、高硬度という特徴を有するもの
であり、更にクロムを使用することなく形成されるとい
う特徴も備えるものである。As explained above, the low-reflection photomask of the present invention has the characteristics of good heat dissipation, chemical resistance, and high hardness, and is also characterized by being formed without using chromium. .
ダイヤモンドライクカーボン膜を低反射用化コーティン
グ皮膜として使用することにより、表面反射率を２０％
以下に抑えることが出来る。By using a diamond-like carbon film as a low-reflection coating, the surface reflectance can be reduced to 20%.
It can be kept below.
図は本発明のマスクの１実施例を示す模式断面図である
。
図において、
ｌはガラス基板、
２はグラファイト、
３はダイヤモンドライクカーボンである。The figure is a schematic cross-sectional view showing one embodiment of the mask of the present invention. In the figure, l is a glass substrate, 2 is graphite, and 3 is diamond-like carbon.
Claims (2)
な基板上に、前記波長の光の吸収体を所望のパターンに
形成してなるフォトマスクであって、前記吸収体パター
ンの表面がダイヤモンドライクカーボン層で被覆されて
おり、該ダイヤモンドライクカーボン層は、その表面か
ら反射する前記波長の光と、該層と前記吸収体層の界面
から反射する前記波長の光とが、互いに逆位相となる厚
さに形成されていることを特徴とする低反射フォトマス
ク。(1) A photomask in which an absorber for light of the wavelength used in photolithography is formed in a desired pattern on a substrate transparent to light of the wavelength used, the surface of the absorber pattern being diamond-like. The diamond-like carbon layer is coated with a carbon layer, and the light of the wavelength reflected from the surface of the diamond-like carbon layer and the light of the wavelength reflected from the interface between the layer and the absorber layer have opposite phases to each other. A low-reflection photomask characterized by being formed thick.
とを特徴とする特許請求の範囲第１項記載の低反射フォ
トマスク。(2) The low-reflection photomask according to claim 1, wherein the absorber is a graphite-like carbon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061285A JPS62217245A (en) | 1986-03-19 | 1986-03-19 | Low reflective photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061285A JPS62217245A (en) | 1986-03-19 | 1986-03-19 | Low reflective photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62217245A true JPS62217245A (en) | 1987-09-24 |
Family
ID=13166774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61061285A Pending JPS62217245A (en) | 1986-03-19 | 1986-03-19 | Low reflective photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62217245A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0706088A1 (en) * | 1990-05-09 | 1996-04-10 | Canon Kabushiki Kaisha | Photomask for use in etching patterns |
| WO2004006014A2 (en) * | 2002-07-03 | 2004-01-15 | Advanced Micro Devices, Inc. | Method of using an amorphous carbon layer for improved reticle fabrication |
| WO2005088364A1 (en) * | 2004-03-17 | 2005-09-22 | Sumitomo Electric Industries, Ltd. | Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it |
| JP2006351741A (en) * | 2005-06-15 | 2006-12-28 | Sumitomo Heavy Ind Ltd | Temperature control device, movable state with temperature control function, and radiation heat transmitting device |
| CN100410700C (en) * | 2004-03-17 | 2008-08-13 | 住友电气工业株式会社 | Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it |
| GB2592094A (en) * | 2020-10-13 | 2021-08-18 | Univ Of The West Of Scotland | An absorber, a detector comprising the absorber, and a method of fabricating the absorber |
-
1986
- 1986-03-19 JP JP61061285A patent/JPS62217245A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0706088A1 (en) * | 1990-05-09 | 1996-04-10 | Canon Kabushiki Kaisha | Photomask for use in etching patterns |
| WO2004006014A2 (en) * | 2002-07-03 | 2004-01-15 | Advanced Micro Devices, Inc. | Method of using an amorphous carbon layer for improved reticle fabrication |
| WO2004006014A3 (en) * | 2002-07-03 | 2004-06-10 | Advanced Micro Devices Inc | Method of using an amorphous carbon layer for improved reticle fabrication |
| CN100410700C (en) * | 2004-03-17 | 2008-08-13 | 住友电气工业株式会社 | Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it |
| JPWO2005088364A1 (en) * | 2004-03-17 | 2008-01-31 | 住友電気工業株式会社 | Hologram color filter, manufacturing method thereof, and color liquid crystal display device including the same |
| WO2005088364A1 (en) * | 2004-03-17 | 2005-09-22 | Sumitomo Electric Industries, Ltd. | Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it |
| US7511784B2 (en) | 2004-03-17 | 2009-03-31 | Sumitomo Electric Industries, Ltd. | Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it |
| JP4605153B2 (en) * | 2004-03-17 | 2011-01-05 | 住友電気工業株式会社 | Hologram color filter, manufacturing method thereof, and color liquid crystal display device including the same |
| JP2006351741A (en) * | 2005-06-15 | 2006-12-28 | Sumitomo Heavy Ind Ltd | Temperature control device, movable state with temperature control function, and radiation heat transmitting device |
| JP4558589B2 (en) * | 2005-06-15 | 2010-10-06 | 住友重機械工業株式会社 | Temperature control device, movable stage with temperature control function, and radiation heat transfer device |
| GB2592094A (en) * | 2020-10-13 | 2021-08-18 | Univ Of The West Of Scotland | An absorber, a detector comprising the absorber, and a method of fabricating the absorber |
| GB2592094B (en) * | 2020-10-13 | 2022-02-23 | Univ Of The West Of Scotland | An absorber, a detector comprising the absorber, and a method of fabricating the absorber |
| WO2022079404A1 (en) * | 2020-10-13 | 2022-04-21 | University Of The West Of Scotland | An absorber, a detector comprising the absorber, and a method of fabricating the absorber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6729508B2 (en) | Photomask blank and photomask | |
| JP5762819B2 (en) | MASK BLANK MANUFACTURING METHOD, TRANSFER MASK MANUFACTURING METHOD, MASK BLANK AND TRANSFER MASK | |
| KR101375419B1 (en) | Photomask blank and photomask | |
| JP5704754B2 (en) | Mask blank and transfer mask manufacturing method | |
| JP5345333B2 (en) | Photomask blank, photomask and manufacturing method thereof | |
| WO2017057376A1 (en) | Mask blank, phase shift mask, and semiconductor device production method | |
| TWI467316B (en) | Method of manufacturing a photomask | |
| JP5690023B2 (en) | Manufacturing method of mask blank and phase shift mask | |
| TWI663467B (en) | Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method | |
| TW201232163A (en) | Mask blank, method for producing same, and transfer mask | |
| JP6271780B2 (en) | Mask blank, phase shift mask, and semiconductor device manufacturing method | |
| KR20100033358A (en) | Photomask blank, photomask and method for manufacturing thereof | |
| KR20170122181A (en) | Mask blank, a transfer mask, a method of manufacturing a transfer mask, and a method of manufacturing a semiconductor device | |
| JPWO2019102990A1 (en) | Mask blank, phase shift mask, and semiconductor device manufacturing method | |
| TWI758382B (en) | Phase shift mask blanke, method of manufacturing a phase shift mask, and method of manufacturing a display device | |
| JP6768987B2 (en) | Manufacturing method of mask blank, phase shift mask and semiconductor device | |
| TW201831987A (en) | Reflective mask blank, reflective mask, method for producing same, and method for producing semiconductor device | |
| JPS62217245A (en) | Low reflective photomask | |
| JP6490786B2 (en) | Mask blank, phase shift mask, and semiconductor device manufacturing method | |
| JPH11125896A (en) | Photomask blank and photomask | |
| TWI827878B (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| JP5701946B2 (en) | Method for manufacturing phase shift mask | |
| JPH0463349A (en) | Photomask blank and photomask | |
| JP3373919B2 (en) | Lithography mask blank and lithography mask | |
| JP2013178372A (en) | Transfer mask and method for manufacturing the same, and mask blank and method for manufacturing the same |