JPH0463349A - Photomask blank and photomask - Google Patents
Photomask blank and photomaskInfo
- Publication number
- JPH0463349A JPH0463349A JP2176075A JP17607590A JPH0463349A JP H0463349 A JPH0463349 A JP H0463349A JP 2176075 A JP2176075 A JP 2176075A JP 17607590 A JP17607590 A JP 17607590A JP H0463349 A JPH0463349 A JP H0463349A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitrogen
- oxygen
- carbon
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 150000002739 metals Chemical class 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 10
- 230000002708 enhancing effect Effects 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 30
- 238000000034 method Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体、ＩＣＸＬＳＩ等の製造に用いられる
フォトマスクブランクおよびフォトマスクに関し、さら
に詳しくは、フォトマスク、特にハードマスクと一般に
呼ばれる、透明基板表面に金属又はそれに代わる遮光性
物質の薄膜を設け、フォトリングラフィ技術によって、
前記薄膜からなるＩＣ，ＬＳＩ用パターンを形成させる
フォトマスクブランクおよびフォトマスクに関するもの
である。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a photomask blank and a photomask used in the production of semiconductors, ICXLSI, etc. A thin film of metal or an alternative light-shielding substance is provided on the surface of the substrate, and photolithography technology is used to
The present invention relates to a photomask blank and a photomask for forming IC and LSI patterns made of the thin film.
［従来の技術］
上述の如く、従来この種のフォトマスクは、透明基板表
面に遮光性の薄膜を設けたフォトマスクブランクに、レ
ジスト塗布→パターン露光→現像−エツチング−レジス
ト除去という一連のフォトリソグラフィの工程を経て製
造されていたが、近年の半導体素子の高密度化に伴って
、より一層のパターンの微細化か要求されるようになり
、従来の紫外線露光法にかわって電子線露光法が、また
従来の湿式のエツチング法にかわってドライエツチング
法が注目され、一部実用化されるに至っている。[Prior Art] As mentioned above, conventionally, this type of photomask is manufactured by applying a photomask blank with a light-shielding thin film on the surface of a transparent substrate, and then applying a photolithography process including resist coating, pattern exposure, development, etching, and resist removal. However, as the density of semiconductor devices has increased in recent years, there has been a demand for even finer patterns, and the electron beam exposure method has replaced the conventional ultraviolet exposure method. Moreover, instead of the conventional wet etching method, a dry etching method has attracted attention and has been put into practical use in some cases.
［発明か解決しようとする課題］
ドライエツチング用のクロムフォトマスクブランクは、
レジスト、特に感電子線レジストとのエツチング選択比
がとれず、そこでエツチングレートを速くできるモリブ
デンシリサイド等の金属シリサイドを使用する技術が例
えば特開昭６３−２１４７５４号、同６３−２１４７５
５号公報に開示されているか、金属シリサイドの場合、
金属とシリコンのスパッタ収率の違いから、長期的に、
作製される薄膜の組成が変化していくという問題がある
。また、タングステン、タンタル、モリブデン、チタン
等の金属はクロムの２倍程度のエツチングレートでエツ
チングされ、例えば特開昭６０−３３５５５号等の公報
に開示されるように、さらにこれらの金属に酸素、窒素
等を添加すると、エツチングレートは２倍以上に高速化
し、これらの金属のシリサイドと同等のエツチングレー
トが得られる。しかし、金属シリサイドはガラス基板と
の密着性に優れているのに対し、これらの金属はガラス
基板との密着性に劣っているという欠点かある。[Problem to be solved by the invention] A chrome photomask blank for dry etching is
For example, JP-A-63-214754 and JP-A-63-21475 disclose techniques that use metal silicides such as molybdenum silicide, which can increase the etching rate when the etching selectivity with resists, especially electron beam-sensitive resists, cannot be maintained.
Disclosed in Publication No. 5 or in the case of metal silicide,
Due to the difference in sputtering yield between metal and silicon,
There is a problem in that the composition of the produced thin film changes. Furthermore, metals such as tungsten, tantalum, molybdenum, and titanium are etched at an etching rate that is approximately twice that of chromium, and as disclosed in, for example, Japanese Patent Application Laid-Open No. 60-33555, these metals are further etched with oxygen, When nitrogen or the like is added, the etching rate is more than doubled, and an etching rate equivalent to that of these metal silicides can be obtained. However, while metal silicide has excellent adhesion to glass substrates, these metals have a disadvantage in that they have poor adhesion to glass substrates.
本発明はこのような従来の課題に鑑みなされたもので、
十分な基板との密着性を有し、エツチングレートが速く
、しかも寸法精度の高い微細パターンを形成できるフォ
トマスクブランクおよびフォトマスクを提供することを
目的とする。The present invention was made in view of such conventional problems,
It is an object of the present invention to provide a photomask blank and a photomask that have sufficient adhesion to a substrate, have a fast etching rate, and can form fine patterns with high dimensional accuracy.
［課題を解決するための手段］
上記目的を達成するために、本発明の第１は、光透過性
基板上に以下の層を順次形成してなるフォトマスクブラ
ンクである。[Means for Solving the Problems] In order to achieve the above object, the first aspect of the present invention is a photomask blank in which the following layers are sequentially formed on a light-transmitting substrate.
第１層：タングステン、タンタル、チタンま”たはモリ
ブデンに酸素、窒素、炭素の少なくとも１成分を添加し
た薄膜層、あるいはこれらいずれかの金属のシリサイド
、あるいは該金属のシリサイドに酸素、窒素、炭素の少
なくとも１成分を添加した薄膜層。First layer: A thin film layer of tungsten, tantalum, titanium, or molybdenum with at least one component of oxygen, nitrogen, or carbon added, or a silicide of any of these metals, or a silicide of the metal with oxygen, nitrogen, or carbon. A thin film layer containing at least one component of
第２層：タングステン、タンタルまたはモリブデンに炭
素、酸素、窒素のうちの少なくとも１成分を添加した薄
膜層。Second layer: A thin film layer in which at least one component of carbon, oxygen, and nitrogen is added to tungsten, tantalum, or molybdenum.
第３層ニクロムの酸化物に窒素、炭素、酸素の少なくと
も１成分を添加した薄膜層。Third layer A thin film layer in which at least one component of nitrogen, carbon, and oxygen is added to nichrome oxide.
また、本発明の第２は、上記のフォトマスクブランクを
パターン化してなるフォトマスクである。A second aspect of the present invention is a photomask formed by patterning the photomask blank described above.
［作用］
このような本発明にあっては、基板と遮光層である第２
層との間に、特定の金属シリサイド、金属酸化物等の層
を設けることにより、基板との密着性か向上し、さらに
反射防止層としての機能も果たす。また特定の金属に炭
素、酸素、窒素の少なくとも１成分を添加した薄膜層を
遮光層としたため、ドライエツチングレートか速く、エ
ツチングか短時間で済む。さらに、第３層は塩素系プラ
ズマでエツチングを行なうとレジストダメージが出ない
うちにエツチングか完了するが、弗素系プラズマに対し
ては強い耐久性を有しており、第３層のエツチング完了
後、続けて弗素系プラズマで第２層及び第１層のエツチ
ングを行なうと、第３層のエツチングパターンは下層の
エツチングマスクとして機能する。従って、この段階で
レジストのプラズマダメージが出てきても、遮光層のエ
ツチング精度には影響がなく、最終的に寸法精度の高い
微細パターンが形成される。また、第３層は前記第１層
と共に低反射層として機能し、パターン裏面からの反射
によるハレーションを防止する。[Function] In the present invention, the substrate and the second light-shielding layer are
By providing a layer of a specific metal silicide, metal oxide, etc. between the two layers, adhesion to the substrate is improved and it also functions as an antireflection layer. Furthermore, since the light-shielding layer is a thin film layer made of a specific metal to which at least one of carbon, oxygen, and nitrogen is added, the dry etching rate is fast and etching can be completed in a short time. Furthermore, if the third layer is etched with chlorine-based plasma, the etching will be completed before resist damage occurs, but it has strong durability against fluorine-based plasma, and after the third layer is etched, the etching will be completed before resist damage occurs. When the second and first layers are subsequently etched using fluorine-based plasma, the etching pattern of the third layer functions as an etching mask for the underlying layer. Therefore, even if the resist is plasma damaged at this stage, the etching accuracy of the light shielding layer is not affected, and a fine pattern with high dimensional accuracy is finally formed. Further, the third layer functions as a low reflection layer together with the first layer, and prevents halation caused by reflection from the back surface of the pattern.
［発明の詳細な説明］ 以下さらに、本発明の詳細な説明する。[Detailed description of the invention] The present invention will be further explained in detail below.
第１図は本発明のフォトマスクブランクの構成を示す断
面図であり、光透過性基板１上に、密着性増強層（第１
層）２．遮光層（第２層）３．および表面反射防止層（
第３層）４をこの順に積層している。FIG. 1 is a cross-sectional view showing the structure of the photomask blank of the present invention, in which an adhesion enhancing layer (first
layer)2. Light shielding layer (second layer)3. and surface antireflection layer (
3rd layer) 4 are laminated in this order.
ここで、光透過性基板１は、ソーダライムガラス、硼硅
酸ガラス、石英ガラス、水晶、サファイヤ等、光学的に
透明な任意材料からなり、その厚みは本質的な制約はな
いが、通常０．２〜６ ｍｍ程度のものが用いられる。Here, the light-transmissive substrate 1 is made of any optically transparent material such as soda lime glass, borosilicate glass, quartz glass, crystal, sapphire, etc., and there are no essential restrictions on its thickness, but it is usually 0. A diameter of about .2 to 6 mm is used.
第１層目の密着性増強層２は、タングステン、タンタル
、チタンまたはモリブデンに酸素、窒素、炭素の少なく
とも１成分を添加した薄膜層、あるいはこれらいずれか
の金属のシリサイド、あるいは該金属のシリサイドに酸
素、窒素、炭素の少なくとも１成分を添加した薄膜層で
ある。酸素、窒素又は炭素が添加される場合は高度に酸
化、窒化、あるいは炭化された金属層が好ましい。本発
明では第１層は特に金属シリサイド層とすることが好ま
しい。The first adhesion enhancing layer 2 is a thin film layer of tungsten, tantalum, titanium, or molybdenum to which at least one component of oxygen, nitrogen, or carbon is added, or a silicide of any of these metals, or a silicide of the metal. It is a thin film layer to which at least one component of oxygen, nitrogen, and carbon is added. If oxygen, nitrogen or carbon is added, highly oxidized, nitrided or carbide metal layers are preferred. In the present invention, the first layer is particularly preferably a metal silicide layer.
第２層目の遮光層３は、タングステン、タンタルまたは
モリブデンに炭素、酸素、窒素のうちの少なくとも１成
分を添加した薄膜層であるが、遮光性を有するためには
一定の光学濃度（一般には２６〜３０程度）が必要であ
る。ここで言う遮光性とは、感光性樹脂の感光領域の光
に対しての遮光性のことである。遮光層３の膜厚として
は一定の光学濃度をもたせるために００２〜０２μｍ程
度である。遮光層３の材質としては特にタングステンか
好ましい。The second light-shielding layer 3 is a thin film layer made of tungsten, tantalum, or molybdenum doped with at least one component of carbon, oxygen, and nitrogen. 26 to 30) is required. The light-shielding property mentioned here refers to the light-shielding property of the photosensitive resin against light in the photosensitive area. The thickness of the light shielding layer 3 is approximately 0.02 to 0.02 μm in order to provide a constant optical density. Tungsten is particularly preferred as the material for the light shielding layer 3.
また、第３層目の表面反射防止層４は、クロムの酸化物
に窒素、炭素、酸素の少なくとも１成分を添加した薄膜
層であって、その膜厚は００１〜００５μｍ程度が好ま
しい。The third layer, the surface antireflection layer 4, is a thin film layer in which at least one component of nitrogen, carbon, and oxygen is added to chromium oxide, and its thickness is preferably about 001 to 005 μm.
光透過性基板１上にこれらの各層を形成するには、例え
ばマグネトロンスパッタリング、真空蒸着、イオンブレ
ーティング、ＣＶＤ法といった従来公知の薄膜形成方法
のいずれをも採用することが出来る。形成された密着性
増強層２及び遮光層３は弗素系のガスを用いたドライエ
ツチングにより、また表面反射防止層４は塩素系のガス
を用いたドライエツチングにより、それぞれパターン化
が可能である。In order to form each of these layers on the light-transmissive substrate 1, any conventionally known thin film forming method such as magnetron sputtering, vacuum evaporation, ion blating, or CVD method can be employed. The formed adhesion enhancing layer 2 and light shielding layer 3 can be patterned by dry etching using a fluorine gas, and the surface antireflection layer 4 can be patterned by dry etching using a chlorine gas.
次に、第１図に示す構成のフォトマスクブランクを用い
てフォトマスクを製造する方法の一例を、第２図（ａ）
〜（ｅ）に基いて述べる。Next, an example of a method for manufacturing a photomask using a photomask blank having the structure shown in FIG. 1 is shown in FIG. 2(a).
This will be explained based on (e).
フォトマスクブランクの表面に必要な洗浄を行なった後
、感光性樹脂を塗布してフォトレジスト層５とし、所望
のパターンを露光６する（第２図（ａ）参照）。フォト
レジスト層５の膜厚は特に限定されない。また、パター
ン露光６を電子線露光により行なうことができるが、勿
論その場合には感光性樹脂として感電子線レジスト樹脂
を使用する。After performing necessary cleaning on the surface of the photomask blank, a photosensitive resin is applied to form a photoresist layer 5, and a desired pattern is exposed 6 (see FIG. 2(a)). The thickness of the photoresist layer 5 is not particularly limited. Further, the pattern exposure 6 can be performed by electron beam exposure, but in that case, of course, an electron beam sensitive resist resin is used as the photosensitive resin.
露光後、所定の現像液を用いて露光部のフォトレジスト
層を除去（ここではポジ型感材である場合を示している
）し、パターン化されたフォトレジスト層５′を形成す
る（第２図（ｂ）参照）。After exposure, the photoresist layer in the exposed area is removed using a predetermined developer (here, the case of a positive-type sensitive material is shown), and a patterned photoresist layer 5' is formed (a second layer is removed). (See figure (b)).
次に、ドライエツチング工程に入るが、まず、塩素系の
ドライエツチングガスにて表面反射防止層４をエツチン
グしく第２図（Ｃ）参照）、続いて弗素系のドライエツ
チングガスにて露出した下層の遮光層３及び密着性増強
層２をエツチングして（第２図（ｄ）参照）、基板１上
の遮光膜をパターン化する。しかる後、残存していたフ
ォトレジスト層５′を除去し、フォトマスクとする（第
２図（ｅ）参照）。Next, a dry etching process begins. First, the surface antireflection layer 4 is etched with a chlorine-based dry etching gas (see Figure 2 (C)), and then the exposed lower layer is etched with a fluorine-based dry etching gas. The light shielding layer 3 and the adhesion enhancing layer 2 are etched (see FIG. 2(d)), and the light shielding film on the substrate 1 is patterned. Thereafter, the remaining photoresist layer 5' is removed to form a photomask (see FIG. 2(e)).
上記エツチング工程において、上層の表面反射防止層４
はレジストパターン５′がダメージを受けないうちにエ
ツチングが完了する。この段階では寸法変化は生じず、
レジストパターン５′寸法と同一寸法でエツチングかな
される。このエツチングされた表面反射防止層のパター
ン４′は、続く下層の遮光層３及び密着性増強層２のエ
ツチング段階では、エツチングマスクとして機能するた
め、この段階でレジストパターン５′にダメージか出て
きて寸法変化が生じたとしても、下層は全く寸法変化を
受けずにエツチングを完了することができる。すなわち
、エツチング工程を通じて精度の良いバターニングか行
われる。In the above etching process, the upper surface antireflection layer 4
Etching is completed before the resist pattern 5' is damaged. At this stage, no dimensional changes occur;
Etching is performed with the same dimensions as the resist pattern 5'. This etched pattern 4' of the surface anti-reflection layer functions as an etching mask in the subsequent etching step of the lower layer light shielding layer 3 and adhesion enhancing layer 2, so that no damage occurs to the resist pattern 5' at this step. Even if dimensional changes occur during etching, etching can be completed without the underlying layer undergoing any dimensional changes. That is, highly accurate patterning is performed through the etching process.
［実施例コ
次に、本発明の具体的実施例を説明するか、本発明はこ
れらの態様に限定されるものではない。[Example] Next, specific examples of the present invention will be described, but the present invention is not limited to these embodiments.
洗浄済の石英ガラス基板上に、密着性増強層として２０
０人、遮光層として６００人、及び表面反射防止層とし
て３００人の三層構成の遮光膜を形成してフォトマスク
ブランクを作製した。該膜の形成はマグネトロンスパッ
タリングにより行なった。20% as an adhesion enhancing layer on a cleaned quartz glass substrate.
A photomask blank was prepared by forming a light-shielding film having a three-layer structure: 0, 600 as a light-shielding layer, and 300 as a surface antireflection layer. The film was formed by magnetron sputtering.
このマスクブランクにＡ Ｚ −１３５０（米国シラプ
レー社製ポジ型感光性樹脂）を４０００人厚にスピンナ
ー塗布してフォトレジスト層とし、ＬＳＩ用パターンを
露光した。しかる後、Ａ Ｚ −１３５０の指定現像液
を用いて露光部のフォトレジスト層を除去し、レジスト
パターンを形成した。This mask blank was coated with AZ-1350 (positive photosensitive resin manufactured by Silaplay, Inc., USA) to a thickness of 4,000 layers using a spinner to form a photoresist layer, and an LSI pattern was exposed. Thereafter, the photoresist layer in exposed areas was removed using a designated developer of AZ-1350 to form a resist pattern.
次に、このレジストパターンを形成したマスクブランク
を反応性イオンエツチング装置にセットし、以下の手順
でトライエツチングを行ない、フォトマスクを得た。Next, the mask blank on which this resist pattern was formed was set in a reactive ion etching apparatus, and trial etching was performed according to the following procedure to obtain a photomask.
排気＝０２ガス導入→０２ガスによるプラズマデイスカ
ム処理−排気−ＣＣＱ ４ ＋ ０２ （５ｖｏり％）
ガス導入−表面反射防止層エツチング−排気−ＣＦ４＋
０２（４ｖｏｆｆｉ％）ガス導入−遮光層及び密着性増
強層エツチング−排気−０２ガス導入−レシストのアッ
シング→終了
なお、上記表面反射防止層のエツチングは全圧０ 、１
ｔｏｒｒ、放電電力密度０．３ｗ／ｃｍで行ない、遮
光層及び密着性増強層のエツチングは全圧０１ｔｏｒｒ
、放電電力密度０．３ｗ／ｅｒｒ？で行なった。Exhaust = 02 gas introduction → Plasma disc processing with 02 gas - Exhaust - CCQ 4 + 02 (5vol%)
Gas introduction - Surface anti-reflection layer etching - Exhaust - CF4+
02 (4 voffi%) Gas introduction - Light shielding layer and adhesion enhancing layer etching - Exhaust - 02 Gas introduction - Resist ashing → End Note that the etching of the surface anti-reflection layer was performed at a total pressure of 0 and 1.
torr, and a discharge power density of 0.3 w/cm, and the etching of the light shielding layer and adhesion enhancing layer was carried out at a total pressure of 01 torr.
, discharge power density 0.3w/err? I did it.
得られたフォトマスクはパターンの設計寸法を非常に高
精度で再現していた。The resulting photomask reproduced the designed dimensions of the pattern with extremely high precision.
［発明の効果］
以上詳細に説明したように、本発明は、光透過性基板上
の遮光膜を三層構成とし、各層に特定の材質のものを使
用したことにより、基板との密着性が改良され、ドライ
エツチングレートか速く、エツチングが短時間で済むよ
うになり、しかも第３層のエツチングパターンがこれよ
りも下層のエツチングマスクとして機能するので、レジ
ストパターンにプラズマダメージが発生しても遮光膜全
体のエツチング精度には何ら影響せず、非常に寸法精度
の高い微細パターンを形成することが出来る。また、第
１層と第３層を共に低反射層としたことにより、パター
ン裏面からの反射によるハレーションを防止することが
出来る。[Effects of the Invention] As explained in detail above, the present invention has a three-layer structure for the light-shielding film on the light-transmitting substrate, and uses a specific material for each layer, thereby improving the adhesion to the substrate. The dry etching rate has been improved and the etching time is shortened, and the third layer etching pattern functions as an etching mask for the lower layer, so even if plasma damage occurs to the resist pattern, light is blocked. The etching accuracy of the entire film is not affected in any way, and a fine pattern with extremely high dimensional accuracy can be formed. Further, by making both the first layer and the third layer low reflection layers, it is possible to prevent halation caused by reflection from the back surface of the pattern.
第１図は本発明のフォトマスクブランクの構成を示す断
面図、第２図（ａ）〜（ｅ）は本発明のフォトマスクを
製造する方法の一例を工程順に示す断面図である。
１・・・光透過性基板
２・・密着性増強層
３・・・遮光層
４・・・表面反射防止層
５・・・フォトレジスト層
６・・・パターン露光FIG. 1 is a cross-sectional view showing the structure of a photomask blank according to the present invention, and FIGS. 2(a) to (e) are cross-sectional views showing an example of a method for manufacturing a photomask according to the present invention in the order of steps. 1... Light-transmissive substrate 2... Adhesion enhancing layer 3... Light shielding layer 4... Surface antireflection layer 5... Photoresist layer 6... Pattern exposure
Claims (2)
とを特徴とするフォトマスクブランク。 第１層：タングステン、タンタル、チタンまたはモリブ
デンに酸素、窒素、炭素の少なく とも１成分を添加した薄膜層、あるいは これらいずれかの金属のシリサイド、あ るいは該金属のシリサイドに酸素、窒素、 炭素の少なくとも１成分を添加した薄膜 層。 第２層：タングステン、タンタルまたはモリブデンに炭
素、酸素、窒素のうちの少なくと も１成分を添加した薄膜層。 第３層：クロムの酸化物に窒素、炭素、酸素の少なくと
も１成分を添加した薄膜層。(1) A photomask blank characterized by forming the following layers in sequence on a light-transmissive substrate. First layer: a thin film layer of tungsten, tantalum, titanium, or molybdenum to which at least one component of oxygen, nitrogen, or carbon is added, or a silicide of any of these metals, or a silicide of the metal and at least one of oxygen, nitrogen, or carbon. Thin film layer with added ingredients. Second layer: A thin film layer in which at least one component of carbon, oxygen, and nitrogen is added to tungsten, tantalum, or molybdenum. Third layer: A thin film layer in which at least one component of nitrogen, carbon, and oxygen is added to chromium oxide.
化してなることを特徴とするフォトマスク。(2) A photomask characterized by being formed by patterning the photomask blank according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2176075A JPH0463349A (en) | 1990-07-03 | 1990-07-03 | Photomask blank and photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2176075A JPH0463349A (en) | 1990-07-03 | 1990-07-03 | Photomask blank and photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0463349A true JPH0463349A (en) | 1992-02-28 |
Family
ID=16007285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2176075A Pending JPH0463349A (en) | 1990-07-03 | 1990-07-03 | Photomask blank and photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0463349A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997031290A1 (en) * | 1996-02-26 | 1997-08-28 | Kuramoto Seisakusho Co., Ltd. | Low reflectance film-carrying substrate |
| EP1117000A2 (en) * | 2000-01-12 | 2001-07-18 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and method of manufacture |
| JP2001305713A (en) * | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | Blanks for photomask and photomask |
| KR100401517B1 (en) * | 2001-09-05 | 2003-10-17 | 주식회사 하이닉스반도체 | Method of fabricating exposure mask for semiconductor manufacture |
| US7297981B2 (en) * | 2004-01-19 | 2007-11-20 | Seiko Epson Corporation | Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide |
| JP2009080421A (en) * | 2007-09-27 | 2009-04-16 | Hoya Corp | Mask blank and method for manufacturing mold for imprinting |
| JP2011059502A (en) * | 2009-09-11 | 2011-03-24 | Hoya Corp | Photomask blank and manufacturing method of photomask |
-
1990
- 1990-07-03 JP JP2176075A patent/JPH0463349A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997031290A1 (en) * | 1996-02-26 | 1997-08-28 | Kuramoto Seisakusho Co., Ltd. | Low reflectance film-carrying substrate |
| EP1117000A2 (en) * | 2000-01-12 | 2001-07-18 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and method of manufacture |
| EP1117000A3 (en) * | 2000-01-12 | 2001-09-05 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and method of manufacture |
| JP2001305713A (en) * | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | Blanks for photomask and photomask |
| KR100401517B1 (en) * | 2001-09-05 | 2003-10-17 | 주식회사 하이닉스반도체 | Method of fabricating exposure mask for semiconductor manufacture |
| US7297981B2 (en) * | 2004-01-19 | 2007-11-20 | Seiko Epson Corporation | Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide |
| CN100374920C (en) * | 2004-01-19 | 2008-03-12 | 精工爱普生株式会社 | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| JP2009080421A (en) * | 2007-09-27 | 2009-04-16 | Hoya Corp | Mask blank and method for manufacturing mold for imprinting |
| JP2011059502A (en) * | 2009-09-11 | 2011-03-24 | Hoya Corp | Photomask blank and manufacturing method of photomask |
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