JPS62213252A - Formation of sic semiconductor film - Google Patents
Formation of sic semiconductor filmInfo
- Publication number
- JPS62213252A JPS62213252A JP5502886A JP5502886A JPS62213252A JP S62213252 A JPS62213252 A JP S62213252A JP 5502886 A JP5502886 A JP 5502886A JP 5502886 A JP5502886 A JP 5502886A JP S62213252 A JPS62213252 A JP S62213252A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- sic film
- gas
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 11
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001294 propane Substances 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001723 carbon free-radicals Chemical class 0.000 abstract description 2
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 238000005255 carburizing Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
単結晶基板上にプラズマＣＶＤ法によってβ−ＳｉＣ半
導体膜を形成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] A β-SiC semiconductor film is formed on a single crystal substrate by plasma CVD.
本発明は、β−ＳｉＣ（立方晶炭化ケイ素）のエピタキ
シャル膜形成に関するものである。The present invention relates to the formation of an epitaxial film of β-SiC (cubic silicon carbide).
β−ＳｉＣは半導体であり、これを利用して半導体装置
を製造する場合にはシリコン半導体装置よりも高温動作
が良い（８００℃でも動作する）ので、耐環境デバイス
として期待されている。β-SiC is a semiconductor, and when a semiconductor device is manufactured using it, it has better high-temperature operation than a silicon semiconductor device (operates even at 800° C.), so it is expected to be an environmentally resistant device.
β−ＳｉＣ半導体膜を単結晶基板（例えばＳｉウェハ）
上にエピタキシャル成長させるには化学的気相成長（Ｃ
Ｖ Ｄ）法で行なわれており、常圧で１３６０℃の高温
条件であった。そのために、反応管および単結晶基板に
負荷がかかり、大面積の単結晶成長がむずかしい。また
、このような高温で基板（Ｓｉウェイ１）上に直接にＳ
ｉＣ膜を形成すると、格子不整合も原因となってはがれ
やすいので、基板の浸炭（炭化）処理を行なってからＳ
ｉＣ膜の工ピタキシャル成長を行なっている。β-SiC semiconductor film on a single crystal substrate (e.g. Si wafer)
Chemical vapor deposition (C
VD) method, and the conditions were normal pressure and high temperature of 1360°C. Therefore, a load is placed on the reaction tube and the single crystal substrate, making it difficult to grow a single crystal over a large area. In addition, S is directly deposited on the substrate (Si way 1) at such high temperatures.
When an iC film is formed, it easily peels off due to lattice mismatch, so the S
We are conducting epitaxial growth of iC films.
β−ＳｉＣ膜のエピタキシャル成長温度（ＣＶＤ反応温
度）を大幅に下げることが本発明の目的である。It is an object of the present invention to significantly lower the epitaxial growth temperature (CVD reaction temperature) of a β-SiC film.
形成したβ−ＳｉＣ膜が１１結晶基板からはがれること
のないように成膜することも本発明の目的である。Another object of the present invention is to form the β-SiC film so that it will not peel off from the 11 crystal substrate.
上述した問題点が、ケイ素含有ガスおよび炭素含有ガス
を用いてプラズマＣＶＤ法によって単結晶基板上にβ−
ＳｉＣＭ！を形成することを特徴とするＳｉＣ半導体膜
の形成方法によって達成される。The above-mentioned problems have been solved by the plasma CVD method using silicon-containing gas and carbon-containing gas.
SiCM! This is achieved by a method of forming a SiC semiconductor film characterized by forming.
ＣＶＤに必要な熱エネルギをプラズマの作用によって供
給するので、常圧ＣＶＤでの成長温度をプラズマＣＶＤ
では大幅に低い成長温度（８００〜１０００℃）にする
ことができる。Since the thermal energy required for CVD is supplied by the action of plasma, the growth temperature in normal pressure CVD is lower than that in plasma CVD.
In this case, the growth temperature can be significantly lower (800 to 1000°C).
このようなエピタキシャル成長温度（８００〜１０００
℃）であるので、ＳｉＣ１］！２はかれに影響を与える
熱的トラブルが大幅に小さくなりそれだけはがれ防止が
できる。Such epitaxial growth temperature (800-1000
℃), so SiC1]! 2) Thermal troubles that affect it are greatly reduced, and peeling can be prevented accordingly.
さらに、β−ＳｉＣのプラズマＣＶＤ０前に、炭素含有
ガス雰囲気中でプラズマを発生させて単結晶基板の表面
部に浸炭（炭化）による薄いβ−ＳｉＣ膜を形成するこ
とは好ましい。このプラズマ浸炭処理によってβ−Ｓｉ
Ｃ膜のはがれがほぼ完全に防【ヒできるようになる。Furthermore, before β-SiC plasma CVD0, it is preferable to generate plasma in a carbon-containing gas atmosphere to form a thin β-SiC film by carburizing (carbonization) on the surface of the single crystal substrate. By this plasma carburizing treatment, β-Si
Peeling of the C film can be almost completely prevented.
プラズマＣＶＤ法で形成するＳｉＣのＳｉ源はケイ素化
合物でよく、例えば５ｉＨａ、 ５ｉＪ６．５ｉｌｌｚ
Ｃ１ｔ。The Si source of SiC formed by the plasma CVD method may be a silicon compound, for example, 5iHa, 5iJ6.5illz
C1t.
５ｉＨＣ１，、ＳｉＣ１ｎなどであり、また、Ｃ源は有
機化合物で、特に、炭化水素が好ましく、例えばＣ１，
。5iHC1, SiC1n, etc., and the C source is an organic compound, particularly preferably a hydrocarbon, for example C1,
.
Ｃｚｌｌｔ、 ＣＪ＊、 Ｃ４Ｈ１１１＋ ＣｚＨａ、
Ｃｚｌｌｔなどである。さらに、プラズマ浸炭処理で
のＣ源には同じ有機化合物が使用でき、特に、Ｃ，１１
，、（プロパン）ガスが好ましい。Czllt, CJ*, C4H111+ CzHa,
Czllt et al. Furthermore, the same organic compounds can be used as the C source in the plasma carburizing process, especially C,
, (propane) gas is preferred.
以下、本発明の好ましい実施態様例によって本発明の詳
細な説明する。Hereinafter, the present invention will be explained in detail with reference to preferred embodiments of the present invention.
±土
Ｓｉ単結晶基板（Ｓｉウェハ）を平行平板型プラズマＣ
ＶＤ装置内の基板支持用サセプタ上に搭載する。サセプ
タはそれに取付けられたヒータによって加熱され、サセ
プタ上の基板が所定温度に加熱されるようになっている
。まず、プラズマＣＶＤ装置内を真空ポンプで排気し、
プロパン（Ｃ３Ｈ□）ガスを流し装置内圧力をｌ Ｔｏ
ｒｒ以下（例えば、０．５ Ｔｏｒｒ）に維持する。Ｓ
ｉ基板を９００℃に加熱するとともに高周波電力（５０
ｗ Ｈｚ、２００Ｗ）を印加してプラズマを発生させる
。このときに、Ｃ３Ｈ１ｌガスがプラズマエネルギによ
って分解して活性度高い炭素ラジカルとなりＳｉ基板の
Ｓｉと反応して基板表面にβ−ＳｉＣ膜を４０ＩＩＩｌ
厚さを形成する（浸炭処理を行なう）０次に、シラン（
Ｓｉｌ１４）ガスを装置内へ流し、装置内圧力を０．５
Ｔｏｒｒに維持したままで、印加電力も一定に維持して
プラズマを維続して発生させる。この結果として、プラ
ズマＣＶＤによりβ−ＳｉＣ膜が９００℃の成長温度に
て約５０ｎｍ／分の成長速度で形成される。± Soil Si single crystal substrate (Si wafer) is parallel plate plasma C
It is mounted on a susceptor for supporting a substrate in a VD device. The susceptor is heated by a heater attached to it, and the substrate on the susceptor is heated to a predetermined temperature. First, the inside of the plasma CVD equipment is evacuated with a vacuum pump,
Flow propane (C3H□) gas and reduce the pressure inside the device.
rr or less (eg, 0.5 Torr). S
The i-board is heated to 900°C and high-frequency power (50°C
w Hz, 200 W) to generate plasma. At this time, the C3H1l gas is decomposed by the plasma energy and becomes highly active carbon radicals that react with the Si of the Si substrate to form a β-SiC film on the substrate surface.
Next, silane (carburizing treatment) is applied.
Sil14) Flow the gas into the device and reduce the pressure inside the device to 0.5
Torr is maintained, and the applied power is also kept constant to continue generating plasma. As a result, a β-SiC film is formed by plasma CVD at a growth temperature of 900° C. and a growth rate of about 50 nm/min.
■１
例１でのプラズマ浸炭処理を行なわずに、例１と同じ条
件でＳｉ基板上にプラズマＣＶＤでβ−ＳｉＣｌｌを直
接に形成する。(1) β-SiCl is directly formed on a Si substrate by plasma CVD under the same conditions as in Example 1 without performing the plasma carburizing treatment in Example 1.
例１および例２で得たβ−ＳｉＣｌｌｉはＳｉ基板から
はがれることもなく、その膜質（結晶性）も良い。The β-SiClli obtained in Examples 1 and 2 does not peel off from the Si substrate and has good film quality (crystallinity).
本発明によれば、プラズマＣＶＤ法でβ−ＳｉＣ半導体
膜を形成することができ、その成長温度を常圧ＣＶＤ法
の場合よりも大幅に低くすることができる。この低温化
はβ−ＳｉＣ膜の形成を従来よりも容易にする。形成し
たβ−ＳｉＣエビタギシヤル半導体膜を利用して特性の
良い半導体素子（例えば、ＭＯＳＦＥＴ 、バイポーラ
トランジスタでの耐環境デバイス、発光ダイオードなど
）を製作することが可能となる。According to the present invention, a β-SiC semiconductor film can be formed by plasma CVD, and the growth temperature can be made significantly lower than in the case of normal pressure CVD. This lower temperature makes it easier to form a β-SiC film than before. It becomes possible to manufacture semiconductor elements with good characteristics (for example, MOSFETs, environmentally resistant devices such as bipolar transistors, light emitting diodes, etc.) by using the formed β-SiC evitaginal semiconductor film.
Claims (1)
を形成する方法において、ケイ素含有ガスおよび炭素含
有ガスを用いてプラズマ化学的気相成長法によって前記
単結晶基板上にβ−ＳｉＣ膜を形成することを特徴とす
るＳｉＣ半導体膜の形成方法。 ２、単結晶基板上にエピタキシャル成長でβ−ＳｉＣ膜
を形成する方法において、炭素含有ガス雰囲気中でプラ
ズマを発生させて前記単結晶基板の表面部に浸炭による
β−ＳｉＣ膜を形成し、次にケイ素含有ガスおよび炭素
含有ガスを用いてプラズマ化学的気相成長法によってβ
−ＳｉＣ膜を形成することを特徴とするＳｉＣ半導体膜
の形成方法。[Claims] 1. In a method of forming a β-SiC film on a single crystal substrate by epitaxial growth, a β-SiC film is formed on the single crystal substrate by plasma chemical vapor deposition using a silicon-containing gas and a carbon-containing gas. - A method for forming a SiC semiconductor film, comprising forming a SiC film. 2. In a method of forming a β-SiC film by epitaxial growth on a single crystal substrate, plasma is generated in a carbon-containing gas atmosphere to form a β-SiC film by carburization on the surface of the single crystal substrate, and then β by plasma chemical vapor deposition using silicon-containing gas and carbon-containing gas.
- A method for forming a SiC semiconductor film, comprising forming a SiC film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5502886A JPS62213252A (en) | 1986-03-14 | 1986-03-14 | Formation of sic semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5502886A JPS62213252A (en) | 1986-03-14 | 1986-03-14 | Formation of sic semiconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62213252A true JPS62213252A (en) | 1987-09-19 |
Family
ID=12987212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5502886A Pending JPS62213252A (en) | 1986-03-14 | 1986-03-14 | Formation of sic semiconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62213252A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5225032A (en) * | 1991-08-09 | 1993-07-06 | Allied-Signal Inc. | Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade |
| JP2004148494A (en) * | 2002-10-24 | 2004-05-27 | Hewlett-Packard Development Co Lp | Hardening nano-imprinting stamp |
-
1986
- 1986-03-14 JP JP5502886A patent/JPS62213252A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5225032A (en) * | 1991-08-09 | 1993-07-06 | Allied-Signal Inc. | Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade |
| JP2004148494A (en) * | 2002-10-24 | 2004-05-27 | Hewlett-Packard Development Co Lp | Hardening nano-imprinting stamp |
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