JPS62209824A - Formation of semiconductor electrode - Google Patents
Formation of semiconductor electrodeInfo
- Publication number
- JPS62209824A JPS62209824A JP5187486A JP5187486A JPS62209824A JP S62209824 A JPS62209824 A JP S62209824A JP 5187486 A JP5187486 A JP 5187486A JP 5187486 A JP5187486 A JP 5187486A JP S62209824 A JPS62209824 A JP S62209824A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- cathode
- immersed
- anode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009713 electroplating Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003792 electrolyte Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical compound CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 2
- 229940043264 dodecyl sulfate Drugs 0.000 description 2
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 2
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 2
- 241000036848 Porzana carolina Species 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003818 cinder Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔７？業上の利用分野〕 本発明は、半導体電極形成方法に関する。[Detailed description of the invention] [7? Field of commercial use] The present invention relates to a method for forming a semiconductor electrode.
従来の半導体電極形成方法は、第３図（ト）に示す如く
、シリコン、ゲルマニウム等からなる半導体基板１の表
裏面に厚さ０．１〜１μｍの金属膜２を先ず形成する。In the conventional semiconductor electrode forming method, as shown in FIG. 3(G), a metal film 2 having a thickness of 0.1 to 1 μm is first formed on the front and back surfaces of a semiconductor substrate 1 made of silicon, germanium, or the like.
次いで、これを５００〜７００℃のＨ３雰囲気中に数分
間設置し、半導体基板１内に所謂シンター層３を形成す
る。このとき、シンター層３の表面に金属酸化物及び半
導体酸化物からなる酸化物層４が第３図（至）に示す如
く形成される。次に、この酸化物層４を除去すべく塩酸
等による酸化物層除去処理を行う。しかしながら、この
酸化物層除去処理の後にもシンター層３の表面には、第
３図（ｑに示す如く、残渣層５が残存する。Next, this is placed in an H3 atmosphere at 500 to 700[deg.] C. for several minutes to form a so-called sinter layer 3 in the semiconductor substrate 1. At this time, an oxide layer 4 made of a metal oxide and a semiconductor oxide is formed on the surface of the sinter layer 3 as shown in FIG. Next, in order to remove this oxide layer 4, an oxide layer removal treatment using hydrochloric acid or the like is performed. However, even after this oxide layer removal treatment, a residue layer 5 remains on the surface of the sinter layer 3, as shown in FIG. 3(q).
然る後、第３図０に示す如く、残渣層５を介してその表
面に蒸着法或はメッキ法により金属電極６を形成してい
た。Thereafter, as shown in FIG. 3, a metal electrode 6 was formed on the surface of the residual layer 5 by vapor deposition or plating.
し力１しながら、このような従来の半導体電極形成方法
では、残渣層５を介して金属電極６が形成されるため、
金属電極６と半導体基板１との接着強度が極端に低下す
る。その結果、所謂電極剥れが発生し、信頼性の高い半
導体装置を得ることができない問題があった。なお、酸
化物層４が完全に除去されずに残液層５ができるのは、
酸化物層４が網目構造を有しているためである。However, in such a conventional semiconductor electrode forming method, the metal electrode 6 is formed through the residue layer 5.
The adhesive strength between the metal electrode 6 and the semiconductor substrate 1 is extremely reduced. As a result, so-called electrode peeling occurs, resulting in the problem that a highly reliable semiconductor device cannot be obtained. In addition, the reason why the oxide layer 4 is not completely removed and the residual liquid layer 5 is formed is as follows.
This is because the oxide layer 4 has a network structure.
本発明は、フッ化水素酸及び微量の銅イオンを含んだニ
ッケルメッキ液中に被処理体の半導体基板を陰極として
浸漬し、該半導体基板（二対向するようにして前記ニッ
ケルメッキ液中に陽極を浸漬すると共に、前記陰極と該
陽極間に所定の電圧を印加して金属シンター層を有さな
い前記半導体基板の表面に電極を形成する半導体電極形
成方法である。In the present invention, a semiconductor substrate to be processed is immersed as a cathode in a nickel plating solution containing hydrofluoric acid and a trace amount of copper ions. In this method, an electrode is formed on the surface of the semiconductor substrate that does not have a metal sinter layer by immersing the semiconductor substrate in the semiconductor substrate and applying a predetermined voltage between the cathode and the anode.
ここで、フッ化水素酸及び微量の銅イオンを含んだニッ
ケルメッキ液としては１例えば下記組成のものを使用す
るのが望ましい。Here, as the nickel plating solution containing hydrofluoric acid and a trace amount of copper ions, it is desirable to use one having the following composition, for example.
記
フッ化水素 ７８ＣＣ／Ｉｔクエン酸
３０ Ｆ！／１塩基性炭酸ニッケル
１３０ ｌＩ／１硫酸ラウリルソーグ ２０
滴／ｌ銅イオン １０〜１００ｍＶ！また。Hydrogen fluoride 78CC/It citric acid
30 F! /1 basic nickel carbonate
130 lI/1 lauryl sulfate 20
Drops/l copper ion 10-100mV! Also.
半導体基板は、シリコン、ｒルマニウム等からなるもの
であり、半導体基板には、所定の素子が形成されていて
も或は形成されてなくても良い。The semiconductor substrate is made of silicon, rumanium, etc., and may or may not have predetermined elements formed thereon.
本発明に係る半導体電極形成方法によれば、シンター層
を形成せずに７フ化水素酸及び微量の銅イオンを含Ｘ７
だニッケルメッキ液中で陰極として浸漬された半導体基
板の表面に、電気メツキ法にて直接電極を形成する。こ
のため１極を強固な接着力で半導体基板上に被着して、
信頼性の向上を図った半導体装置を容易に得ることがで
きる。According to the method for forming a semiconductor electrode according to the present invention, it is possible to form a semiconductor electrode containing X7 hydrofluoric acid and a trace amount of copper ions without forming a sinter layer.
Electrodes are directly formed by electroplating on the surface of a semiconductor substrate that has been immersed as a cathode in a nickel plating solution. For this reason, one pole is attached to the semiconductor substrate with strong adhesive force,
A semiconductor device with improved reliability can be easily obtained.
以下１本発明の実施例について図面を参照して説明する
。先ず、第１図（Ａ）に示す如く１例えばシリコン基板
に所定導電型の半導体層を形成した半導体基板１０を用
意する。この半導体基板１０をフッ化水素酸と硝酸を含
むエツチング液で表面処理した後、水洗する。次に１表
面処理後の半導体基板１０を第１図（均に示す如く、ニ
ッケルメッキ液１）を満したメッキ槽１２内に陰極１３
として浸漬する。ニッケルメッキ液１１は、例えば下記
の組成を有するものである。An embodiment of the present invention will be described below with reference to the drawings. First, as shown in FIG. 1A, a semiconductor substrate 10 is prepared, for example, a silicon substrate on which a semiconductor layer of a predetermined conductivity type is formed. After the semiconductor substrate 10 is surface-treated with an etching solution containing hydrofluoric acid and nitric acid, it is washed with water. Next, the semiconductor substrate 10 after the first surface treatment is placed in a plating bath 12 filled with a nickel plating solution 1 (as shown in FIG. 1) with a cathode 13.
Soak as. The nickel plating solution 11 has, for example, the following composition.
記
フッ化水素 ７８ ｃｑ／ １クエン酸
３０ｆｉ／１塩基性炭酸ニツケル
１３０１１／１硫酸ラウリルソーグ ２０滴
／ｌ銅イオン １０〜１ｏｄｑ／／次に、ニ
ッケルメッキ液１１中にニッケル板からなる陽極１４を
陰橋１３に対向するように浸漬する１次いで、陽極１４
を陰＆１３に電源１５を設けて両者間に所定の電圧を印
加し、半導体基板１０の表面に第１図（ｑに示す如く、
電気メッキにて直接電機１６を形成する。Hydrogen fluoride 78 cq/1 citric acid 30fi/1 basic nickel carbonate
13011/1 lauryl sulfate 20 drops/l copper ion 10-1 odq//Next, the anode 14 made of a nickel plate is immersed in the nickel plating solution 11 so as to face the negative bridge 13.
A power supply 15 is provided between the two and a predetermined voltage is applied between the two, and the surface of the semiconductor substrate 10 is heated as shown in FIG.
The electric machine 16 is directly formed by electroplating.
このようにこの半導体電極形成方法によれば。Thus, according to this semiconductor electrode forming method.
フッ化水素酸及び微量の銅イオンを含んだニッケルメッ
キ液中で電気メッキによシ直接半導体基板１０上にｉ％
ｘ６を形成するので極めて高い接着力でミオ）１６を半
導体基板１０上て被着することができる。しかも、従来
の方法のようにシンター層の形成工程が不要であシ、生
産性を向上させることができる。また、電流１６が高込
接着力で半導体基板１０に被着しているので、電極１６
の剥れを防止して、信頼性の高い半導体装置を得ること
ができる。i% directly onto the semiconductor substrate 10 by electroplating in a nickel plating solution containing hydrofluoric acid and a trace amount of copper ions.
x6, it is possible to deposit the MIO) 16 on the semiconductor substrate 10 with extremely high adhesive strength. Moreover, unlike the conventional method, the step of forming a sinter layer is not necessary, and productivity can be improved. In addition, since the current 16 is attached to the semiconductor substrate 10 with high adhesive strength, the electrode 16
A highly reliable semiconductor device can be obtained by preventing peeling.
因みに、実施例によって半導体基板１０に被着された電
極１６の接着強度と度数の関係を調べたところ、第２図
にＯ印で示す通シであった。これに対して＄１図に示し
た従来の方法で半導体基板１に被着された金属電Ｐｉ６
の接着強度を調べたところ、′＠２図にＸ印にて併記し
た通シであった。Incidentally, when the relationship between the adhesive strength and frequency of the electrode 16 adhered to the semiconductor substrate 10 according to the example was investigated, it was found to be consistent as indicated by O in FIG. On the other hand, the metal electrode Pi6 deposited on the semiconductor substrate 1 by the conventional method shown in FIG.
When the adhesive strength was examined, the results were as shown in Figure 2 with an X mark.
同図から明らかなように実施例によるものでは。As is clear from the figure, this is not according to the embodiment.
従来の方法によるものに比べて遥かに高す接着力で電極
１６が半導体基板１０に被着していることが判った。It was found that the electrode 16 was adhered to the semiconductor substrate 10 with much higher adhesion force than that achieved by conventional methods.
以ヒ説明した如く１本発明に係る半導体電極形成方法に
よれば、シンダ一層を形成する工程を不要にし、かつ、
電極を強固な接着力で半導体基板に被着して、信頼性の
向上を図った半導体装置を容易に得ることができるもの
である。As explained below, according to the semiconductor electrode forming method according to the present invention, the step of forming a single layer of cinder is unnecessary, and
By attaching electrodes to a semiconductor substrate with strong adhesive force, it is possible to easily obtain a semiconductor device with improved reliability.
第１図は１本発明方法を示す説明図、第２図は、１掻の
接着強度と変数の関係を示す特性図。
第３図は、従来の半導体電橋形成方法を示す説明図であ
る。
１０・・・半・°４体基板、１１・・・ニッケルメッキ
液。
１２・・・メッキ槽、１３・・・陰極、１４・・・陽橋
、１５・・・電源、１６・・・電極。
出願人代理人 弁理士 鈴 江 武 彦第１ 日
簀空 −くFIG. 1 is an explanatory diagram showing the method of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between the adhesive strength of one stroke and variables. FIG. 3 is an explanatory diagram showing a conventional semiconductor bridge forming method. 10...Half/°4 body board, 11...Nickel plating solution. 12... Plating tank, 13... Cathode, 14... Positive bridge, 15... Power supply, 16... Electrode. Applicant's agent Patent attorney Suzue Takehiko No. 1 Sora Hikan -ku
Claims (1)
キ液中に被処理体の半導体基板を陰極として浸漬し、該
半導体基板に対向するようにして前記ニッケルメッキ液
中に陽極を浸漬すると共に、前記陰極と該陽極間に所定
の電圧を印加して金属シンター層を有さない前記半導体
基板の表面に電極を形成することを特徴とする半導体電
極形成方法。A semiconductor substrate to be processed is immersed as a cathode in a nickel plating solution containing hydrofluoric acid and a trace amount of copper ions, and an anode is immersed in the nickel plating solution so as to face the semiconductor substrate, A method for forming a semiconductor electrode, comprising applying a predetermined voltage between the cathode and the anode to form an electrode on the surface of the semiconductor substrate that does not have a metal sinter layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5187486A JPS62209824A (en) | 1986-03-10 | 1986-03-10 | Formation of semiconductor electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5187486A JPS62209824A (en) | 1986-03-10 | 1986-03-10 | Formation of semiconductor electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62209824A true JPS62209824A (en) | 1987-09-16 |
Family
ID=12899028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5187486A Pending JPS62209824A (en) | 1986-03-10 | 1986-03-10 | Formation of semiconductor electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62209824A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637624A (en) * | 1979-09-04 | 1981-04-11 | Toshiba Corp | Manufacture of electrode in semiconductor device |
| JPS5884965A (en) * | 1981-11-13 | 1983-05-21 | モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション | Nickel plating method |
-
1986
- 1986-03-10 JP JP5187486A patent/JPS62209824A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637624A (en) * | 1979-09-04 | 1981-04-11 | Toshiba Corp | Manufacture of electrode in semiconductor device |
| JPS5884965A (en) * | 1981-11-13 | 1983-05-21 | モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション | Nickel plating method |
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