JPS62204531A - Removing method for organic film - Google Patents
Removing method for organic filmInfo
- Publication number
- JPS62204531A JPS62204531A JP4625386A JP4625386A JPS62204531A JP S62204531 A JPS62204531 A JP S62204531A JP 4625386 A JP4625386 A JP 4625386A JP 4625386 A JP4625386 A JP 4625386A JP S62204531 A JPS62204531 A JP S62204531A
- Authority
- JP
- Japan
- Prior art keywords
- ozone
- substrate
- film
- processed
- nozzles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011148 porous material Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は有機物被膜の乾燥状態での除去方法及び装置に
関するもので、特に半導体装置の製造に用いるレジスト
膜の除去方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for removing an organic film in a dry state, and particularly to a method for removing a resist film used in the manufacture of semiconductor devices.
（従来技術）
半導体装置を製造する場合には、写真処理技術あるいは
、Ｘ線照銅、電子線照射等で処理されたレジスト膜をマ
スクとしてシリコン等の基板にエツチング等の処理を施
した後に該レジスト膜を除去することが必要である。(Prior art) When manufacturing a semiconductor device, a resist film treated with photo processing technology, X-ray irradiation, electron beam irradiation, etc. is used as a mask to perform etching or other processing on a substrate such as silicon. It is necessary to remove the resist film.
レジスト膜は酸化ツノのめる液体中へ浸漬すことによっ
て行う湿式処理により除去したり、酸素プラズマ、紫外
線、オゾンなどの乾式処理によって除去している。The resist film is removed by a wet process performed by immersing it in a liquid containing oxidized horns, or by a dry process using oxygen plasma, ultraviolet rays, ozone, or the like.
溶液による湿式処理は、廃液処理に問題があり、又液体
中に含まれる微細な不純物が半導体装置に悪影響を及ぼ
すと言う問題点から乾式処理への要望が高まっている。Wet processing using a solution has problems in waste liquid treatment, and fine impurities contained in the liquid have an adverse effect on semiconductor devices, so there is an increasing demand for dry processing.
乾式処理の中心であった酸素プラズマによる方法は、プ
ラズマによって半導体装置に損傷が生じることがおり、
オゾンや紫外線による除去方法が注目されている。The method using oxygen plasma, which has been the mainstay of dry processing, can cause damage to semiconductor devices due to the plasma.
Removal methods using ozone and ultraviolet rays are attracting attention.
（発明が解決しようとする問題点）
オゾンが供給されているハウジング内で半導体基板を加
熱しつつ有機物被膜を除去することは、例えば、特開昭
５２−２０７６６＠とじて知られているが、供給される
オゾンが加熱手段をはじめとして、高温となった装置内
部と接触する結果、オゾンの熱分解が起こり、供給され
るオゾンが有効に作用しないこととなり、又オゾン供給
量を増加させることにより実質的にオゾン濃度を高めよ
うとすると半導体基板の温度をいたずらに低下ざゼるこ
ととなって処理速度の低下を招く、又温度低下に対処す
るために基板の加熱温度を高めることは、半導体装置に
悪影響を及ぼすために好ましくない。(Problems to be Solved by the Invention) Removing an organic film while heating a semiconductor substrate in a housing to which ozone is supplied is known, for example, as in JP-A-52-20766@. As a result of the supplied ozone coming into contact with the heating means and other high-temperature devices, thermal decomposition of ozone occurs, and the supplied ozone does not work effectively, and by increasing the amount of ozone supplied, If you try to substantially increase the ozone concentration, you will unnecessarily lower the temperature of the semiconductor substrate, resulting in a reduction in processing speed, and increasing the heating temperature of the substrate to cope with the temperature drop This is undesirable because it has a negative effect on the equipment.
また、オゾンは放電によって発生さける結果、オゾン発
生電極から放電により金属の飛散がおこり、発生するオ
ゾン中に伴なわれて半導体装置に悪影響を及ぼすことが
おこる。In addition, as a result of ozone being avoided by discharge, metal scatters from the ozone generating electrode due to discharge, and is accompanied by the generated ozone, which adversely affects the semiconductor device.
従来のオゾン発生装置を使用した場合には、オゾン中に
含まれる金属成分による半導体装置の汚染を防止するた
めに微孔性フィルターを使用する方法もとり得るが、極
めて微細な孔径のフィルターで必るために圧力損失が大
きくなるとともに、短時間に目詰りが生じる結果、フィ
ルターの交換を頻繁に行わなければならず、装置の運転
上支障をきたすことかおこる。When using a conventional ozone generator, it is possible to use a microporous filter to prevent contamination of semiconductor devices due to metal components contained in ozone, but it is necessary to use a filter with extremely fine pores. This increases pressure loss and causes clogging in a short period of time, requiring frequent filter replacement, which may impede the operation of the device.
（問題点を解決するための手段）
本発明者らは、放電による金属の飛散が少ないオゾン発
生装置として、六硼化ランタンをオゾン生成域中の電極
とするオゾン発生装置を提案（特願昭６０−２８５６２
８号）したが、このようなオゾン発生装置を半導体装置
に形成した有機物被膜の除去に適用することにより、金
属による汚染の生じない半導体装置が製造可能なことを
見いだしたのである。(Means for Solving the Problems) The present inventors proposed an ozone generator in which lanthanum hexaboride is used as an electrode in the ozone generation region as an ozone generator with less metal scattering due to discharge (patent application 60-28562
However, by applying such an ozone generator to the removal of an organic film formed on a semiconductor device, it was discovered that a semiconductor device free from metal contamination could be manufactured.
以下、この発明を添付の図面に基づいて説明する。Hereinafter, the present invention will be explained based on the accompanying drawings.
第１図は本発明の方法による有機物の除去装置を示す図
であり、処理至１内には、処理すべき半導体基板３を載
置する基板支持装置２があり、基板支持装置の下部には
加熱装置４が設けである。FIG. 1 is a diagram showing an apparatus for removing organic matter according to the method of the present invention. In the processing chamber 1, there is a substrate support device 2 on which a semiconductor substrate 3 to be processed is placed, and at the bottom of the substrate support device. A heating device 4 is provided.
処理室内には高濃度のオゾン供給管５があり、該供給管
は冷却管６で包囲されている。オゾン供給’ｌ’ｊ’＋
（ま、半導体基板上へオゾンを噴射りる複数のノズル
７と連結されており、ノズルには細孔８か設けられ、冷
却管を貫通している。There is a high concentration ozone supply pipe 5 in the processing chamber, and the supply pipe is surrounded by a cooling pipe 6. Ozone supply 'l'j'+
(Well, it is connected to a plurality of nozzles 7 that inject ozone onto the semiconductor substrate, and the nozzles are provided with small holes 8 that pass through the cooling pipe.
処理至、オゾン供給管、ノズル等をはじめとする構成材
料は、ステンレススヂールのようなオゾンに耐蝕性のあ
る材料であれば、各種の材料を使用することができる。Various materials can be used for the constituent materials including the treatment, ozone supply pipe, nozzle, etc., as long as they are resistant to ozone corrosion, such as stainless steel.
又、冷却媒体供給・管の形状も円柱状、角型などの形状
をとることができ、ノズルの本数も処理すべき基板の大
きざに応じて適宜に設定することができる。Further, the shape of the cooling medium supply pipe can be cylindrical or square, and the number of nozzles can be appropriately set depending on the size of the substrate to be processed.
ノズルの径は適宜に定めることができるが、２ｍ以下に
することが好ましい。Although the diameter of the nozzle can be determined as appropriate, it is preferably 2 m or less.
オゾンは、オゾン生成域中にある放電電極を六硼化ラン
タンとしたオゾン発生装置９において、加圧状態で発生
さＵ、処理室内で基板に作用した後に、オゾン分解装置
１０で処理された後に排出される。Ozone is generated under pressure in an ozone generator 9 in which the discharge electrode in the ozone generation region is made of lanthanum hexaboride, and after acting on a substrate in a processing chamber, it is treated in an ozone decomposition device 10. be discharged.
（作用）
六硼化ランタンをオゾン生成用の放電電極とすることに
より、金属成分を含まない高濃度のオゾンを半導体基板
上に噴射することができる。(Function) By using lanthanum hexaboride as the discharge electrode for ozone generation, highly concentrated ozone containing no metal components can be injected onto the semiconductor substrate.
（実施例）
シリコンからなる半導体基板上に、東京応化工業（株）
製ポジ型ホトレジスト０ＦＰＲ−８００を１μｍ塗布し
現像したものを、試料支持装置上に載置し、電気ヒータ
により基板を２３０’Ｃに加熱し、内径０．７＃のノズ
ルから基板上に約２０゜０００ ｐｐｍのオゾンを噴射
した。(Example) On a semiconductor substrate made of silicon,
A positive-type photoresist 0FPR-800 was coated to a thickness of 1 μm and developed, then placed on a sample support device, heated to 230'C using an electric heater, and sprayed approximately 20cm onto the substrate from a nozzle with an inner diameter of 0.7#. °000 ppm ozone was injected.
レジストを完全に除去したことを確認した後、半導体基
板上の金属成分の分析を二次イオン質量分析装置（ＳＩ
ＭＳ）で行ったが、未処理基板と同様に金属成分は検出
されなかった。After confirming that the resist has been completely removed, the metal components on the semiconductor substrate are analyzed using a secondary ion mass spectrometer (SI).
MS), but like the untreated substrate, no metal components were detected.
一方、タングステン上にニッケルの被覆を設けた電極を
有するオゾン発生装置から発生するオゾンによってレジ
ストを除去した後、同様に金属成分の分析を行ったとこ
ろ、ニッケル及びタングステンが検出された。On the other hand, after removing the resist with ozone generated from an ozone generator having an electrode with a nickel coating on tungsten, the metal components were similarly analyzed, and nickel and tungsten were detected.
（発明の効果）
有機物被膜を形成した基板から該被膜を除去する方法に
おいて、六硼化ランタンをオゾン生成域中の電極とした
オゾン発生装置を用いることにより、金属成分による汚
染が生じないという効果が得られるのでおる。(Effects of the Invention) In a method for removing an organic film from a substrate on which the film has been formed, the use of an ozone generator using lanthanum hexaboride as an electrode in the ozone generation region has the effect that contamination by metal components does not occur. This is because you can get .
第１図は、本発明の方法による有機物の除去装置を示す
図である。
１、・・・処理室
２、・・・基板支持装置
３、・・・半導体基板
４、・・・加熱装置
５、・・・オゾン供給管
６、・・・冷却管
７、・・・ノズル
８、・・・細孔
９、・・・オゾン発生装置FIG. 1 is a diagram showing an apparatus for removing organic matter according to the method of the present invention. 1,...processing chamber 2,...substrate support device 3,...semiconductor substrate 4,...heating device 5,...ozone supply pipe 6,...cooling pipe 7,...nozzle 8, ... Pore 9, ... Ozone generator
Claims (1)
おいて、処理室内の処理される基板を、該被膜が形成さ
れていない面から加熱しつつ、該被膜面に冷却したノズ
ルの細孔から、六硼化ランタンをオゾン生成域の放電電
極としたオゾン発生装置で生成した高濃度オゾンを噴射
することを特徴とする有機物被膜の除去方法。In a method for removing an organic film from a substrate on which the film has been formed, the substrate to be processed in the processing chamber is heated from the surface on which the film is not formed, and a six-layer injector is applied to the film surface through the pores of a cooled nozzle. A method for removing an organic film, which comprises spraying highly concentrated ozone generated by an ozone generator using lanthanum boride as a discharge electrode in an ozone generation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4625386A JPS62204531A (en) | 1986-03-05 | 1986-03-05 | Removing method for organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4625386A JPS62204531A (en) | 1986-03-05 | 1986-03-05 | Removing method for organic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62204531A true JPS62204531A (en) | 1987-09-09 |
Family
ID=12742011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4625386A Pending JPS62204531A (en) | 1986-03-05 | 1986-03-05 | Removing method for organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62204531A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0244722A (en) * | 1988-08-05 | 1990-02-14 | Teru Kyushu Kk | Ashing system |
-
1986
- 1986-03-05 JP JP4625386A patent/JPS62204531A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0244722A (en) * | 1988-08-05 | 1990-02-14 | Teru Kyushu Kk | Ashing system |
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