JPS62202075A - Device for forming thin film - Google Patents
Device for forming thin filmInfo
- Publication number
- JPS62202075A JPS62202075A JP4193986A JP4193986A JPS62202075A JP S62202075 A JPS62202075 A JP S62202075A JP 4193986 A JP4193986 A JP 4193986A JP 4193986 A JP4193986 A JP 4193986A JP S62202075 A JPS62202075 A JP S62202075A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vacuum chamber
- plate
- vacuum tank
- shaped member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000002265 prevention Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は真空槽を用いた薄膜形成装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a thin film forming apparatus using a vacuum chamber.
（従来の技術）
近年、新しい材料の開発において、薄膜形成技術を用い
ることが、さかんに行なわれている。(Prior Art) In recent years, thin film formation technology has been frequently used in the development of new materials.
たとえば、薄膜形成装置として、スノくツタ法、蒸着法
、イオンビーム法などが知られている。For example, known thin film forming apparatuses include the snow ivy method, vapor deposition method, and ion beam method.
スパッタ法を例にとって以下説明を進める。第４図はダ
ウンスパッタと呼ばれる構造のスノくツタ装置で、真空
槽Ｃ１ｌ内の上部に所望の薄膜を得るためのターゲット
（２）があり、下部に試料テーブル（３）、その中間に
シャツタ板（４１が配置されている。そして、一般に希
ガスと呼ばれるＡｒ（アルゴン）等のガス（６）を適量
、真空槽（１）内に導入し、ガス（５）のイオンをＤＣ
またはＡＣまたはＲＦ電源よりなるターゲット電源（６
）によってターゲット（２）に衝突させターゲット（２
）の原子または分子を試料テーブル（３）真空パルプを
示している。スパッタ装置ｔＫはその他、第５図に示す
ような試料テーブル（３）とターゲット（２）の上下関
係が両図と逆になった、アップスパッタと呼ばれる構造
の装置等もある。The following explanation will be given by taking the sputtering method as an example. Figure 4 shows a snow sputtering device with a structure called down sputtering, in which there is a target (2) at the top of the vacuum chamber C1l for obtaining the desired thin film, a sample table (3) at the bottom, and a shirt plate in the middle. (41 is arranged. Then, an appropriate amount of gas (6) such as Ar (argon), which is generally called a rare gas, is introduced into the vacuum chamber (1), and the ions of the gas (5) are
or target power source consisting of AC or RF power source (6
) to collide with target (2) and target (2)
) sample table (3) shows vacuum pulp. In addition to the sputtering apparatus tK, there is also an apparatus called an up-sputtering apparatus in which the vertical relationship between the sample table (3) and the target (2) is reversed as shown in FIG. 5.
ところで、８４図に示すようなダウンスパッタ法におい
てはターゲット（２）から飛び出る原子または分子は試
料テーブル（３）方向のみならず、真空槽（１）の内壁
のいたるところに付着して膜となり、真空槽（１）の内
壁を著しく汚すことになる。そして内壁に付着した膜α
υは数μｍオーダの厚みに堆積すると、内壁より小片状
となって剥離する。この小片状の剥離膜Ｑ２が試料テー
ブル（３）上知配置した基板（力に第６図の矢印Ａに示
す如く落下すると、その部分が遮蔽されて、目的とする
薄膜ｆ１３が正常に形成できなくなる。By the way, in the down sputtering method as shown in Fig. 84, atoms or molecules flying out from the target (2) adhere not only in the direction of the sample table (3) but also all over the inner wall of the vacuum chamber (1) and form a film. This will seriously stain the inner wall of the vacuum chamber (1). And the membrane α attached to the inner wall
When υ is deposited to a thickness on the order of several μm, it peels off from the inner wall in the form of small pieces. When this small piece of peeled film Q2 falls onto the sample table (3) on the substrate placed above (as shown by arrow A in Figure 6), that part is shielded and the desired thin film f13 is normally formed. become unable.
また、第５図に示すようなアップスパッタ構造の装置に
おいては前記小片状の剥離膜がターゲット（２）上に落
下すると、これが不純物となって再スパツタされ、基板
（力上の薄膜の純度を低Ｆさせる。In addition, in an apparatus with an up-sputtering structure as shown in FIG. set to low F.
また、前記小片状の剥離膜が金属や合金である場合には
、ターゲット（２）の電極とアースとの間にその剥離膜
が落下すると、スパッタ放電が不安定になったり、放電
が停止してしまったりすることがあった。Furthermore, if the flaky peeling film is made of metal or alloy, if the peeling film falls between the electrode of the target (2) and the ground, the sputtering discharge becomes unstable or the discharge stops. Sometimes I ended up doing something wrong.
そこで、上記のような問題を解決するために、従来、第
７図に示すように防着板と呼ばれるステンレス系の板状
部材α荀を真２２Ｗｌ （ｘ）の内壁を保護するような
位置に配置していた。これにより真空槽（１）の内壁の
汚れを防止していた。しかしながら、数１０μｍ以上の
薄膜（特に金属や合金の薄膜）を基板（７）上に形成す
る場合、そのスパッタ中に真空槽（１）の板状部材α養
土に前述１．．７’ｍと同様の膜が形成される。従って
、この膜がやはり剥離して、前述したのと同様の問題が
生じていた。Therefore, in order to solve the above problem, conventionally, as shown in Fig. 7, a stainless steel plate-like member α, called an anti-adhesion plate, was placed in a position to protect the inner wall of the true 22Wl (x). It was placed. This prevented the inner wall of the vacuum chamber (1) from becoming dirty. However, when forming a thin film (particularly a metal or alloy thin film) of several tens of micrometers or more on the substrate (7), during sputtering, the plate-shaped member α of the vacuum chamber (1) is added to the nourishing soil described in step 1 above. ．． A film similar to 7'm is formed. Therefore, this film also peeled off, causing the same problem as described above.
（発明が解決しようとする問題点）
上述したように従来、真空槽の内壁からの剥離膜により
薄膜形成に問題が生じていた。本発明は上述した点にか
んがみてなされたもので、安定した薄膜形成を長時間に
亘って連続的に行うことのできる薄膜形成装置を提供す
ることを目的とする。(Problems to be Solved by the Invention) As described above, conventionally, problems have arisen in thin film formation due to peeling of the film from the inner wall of the vacuum chamber. The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a thin film forming apparatus capable of continuously forming a stable thin film over a long period of time.
（問題点を解決するための手段）
本発明においては薄膜形成を行う真空槽内にこの内壁側
より板状部材、網状部材の順番で両部材を重ね合せる如
くして配設せしめるよう（（シたものである。(Means for Solving the Problems) In the present invention, the plate-like member and the net-like member are placed one on top of the other in this order from the inner wall side in the vacuum chamber in which the thin film is formed. It is something that
（作 用）
上述の構成により、形成される薄膜の材料が真空槽内壁
を汚すことはなくなシ、また前記網状部材によって板状
部材から剥離した膜が薄膜形成に影響を及ぼすことが防
がれる。(Function) With the above-described configuration, the material of the thin film to be formed does not contaminate the inner wall of the vacuum chamber, and the net-like member prevents the film peeled from the plate member from affecting the thin film formation. It will be done.
（実施例）
以下、本発明になる薄膜形成装置の一実施例について第
１図乃至第３図にもとづいて説明する。(Embodiment) An embodiment of the thin film forming apparatus according to the present invention will be described below with reference to FIGS. 1 to 3.
第１図において、Ｃυは真空槽、器はターゲット、＠は
試料テーブル、＠は基板、（ハ）はステンレス系の板状
部材（防着板）、（至）は同じくステンレス系の網状部
材（金網）である。なお、この図においては従来例と同
様の電源、真空ポンプ、真空バルブ等は記載を省略して
いる。In Figure 1, Cυ is a vacuum chamber, the vessel is a target, @ is a sample table, @ is a substrate, (c) is a stainless steel plate member (adhesion prevention plate), and (to) is a stainless steel mesh member ( wire mesh). Note that, in this figure, the power supply, vacuum pump, vacuum valve, etc. similar to the conventional example are omitted.
上記の装置の動作について次に説明する。従来と同様、
アルゴン等のガスはターゲット（至）に衝突させられ、
ターゲット（社）からはこのターゲット＠の原子または
分子が飛び出す。この原子または分子は試料テーブル（
至）に向かうもの以外は金網（至）と防着板（ハ）によ
り捕捉される格好となる。すなわち従来生じていた防着
板のからの膜の剥離が生じなくなる。ここで、金網（至
）について以下詳述する。The operation of the above device will now be described. As before,
A gas such as argon is collided with a target,
Atoms or molecules of this target @ fly out from the target. This atom or molecule is located in the sample table (
Anything other than those heading towards (To) will be caught by the wire mesh (To) and anti-adhesion plate (C). That is, the peeling of the film from the adhesion prevention plate, which has conventionally occurred, does not occur. Here, the wire mesh (to) will be described in detail below.
金網（至）の寸法等については実験によｐ以下の条件を
満足させると、％に膜の剥離が防止できることがわかっ
た。すなわち、第２図に示す金網（至）のワイヤ罰の径
ＤＷ、！：開口寸法Ａ、Ｂ（一般にＡ＝Ｂ）を（１）式
を満足するように設定し、かつＡ（＝Ｂ）を１ｘＩＩ以
下に設定すると良い。As for the dimensions of the wire mesh, it has been found through experiments that if the condition of p or less is satisfied, peeling of the film can be prevented by %. That is, the wire diameter DW of the wire mesh shown in FIG. : It is preferable to set the opening dimensions A and B (generally A=B) so as to satisfy the formula (1), and to set A (=B) to 1×II or less.
Ｂ
Ｎ≧了（＝了） ・・・（１）この条件の満
足は特に金ｉＡ （合金を含む）材料をスパッタすると
き釦大きな効果を発生するＣまた金網（至）と防着板（
ハ）との間隔Ｄｓ（第３図参照）Ｋついても以下の（２
）式を満足させるようにすると良い。(1) Satisfaction of this condition produces a great effect especially when sputtering gold iA (including alloys) materials.
(c) and the distance Ds (see Figure 3) K, the following (2
) should satisfy the formula.
Ｄｓ≦Ａ ・・・（２）上記間
隔Ｄｓは金網（至）の防着板（ハ）との間に防着板（ハ
）側から発生する剥離された膜が溜ることから、膜の剥
離防止に大きく影響する。Ds≦A... (2) The above distance Ds is the distance between the wire mesh (to) and the adhesion prevention plate (c), since the peeled film generated from the adhesion prevention plate (c) side accumulates, so the separation of the film is prevented. This greatly affects prevention.
以上述べたように本実施例の装置によれば、薄膜形成に
おいて従来生じていた問題が解消され、安定した放電が
得られ、純度の高い薄膜形成を行うことができる。As described above, according to the apparatus of this embodiment, the problems conventionally occurring in thin film formation are resolved, stable discharge can be obtained, and thin films with high purity can be formed.
なお、上記実施例においては防着板（至）と金網（ハ）
の材料をステンレス系としたが、本発明はこれに限られ
ることなく、真空槽に適合するものであれば何でも良い
。また真空槽にあってはスパッタ用の装置を構成したが
、本発明は同じく真空槽を用いる蒸着装置やイオンブレ
ーティング装置等にも適用できる。In addition, in the above example, the adhesion prevention plate (to) and the wire mesh (c)
Although the material is stainless steel, the present invention is not limited to this, and any material may be used as long as it is compatible with the vacuum chamber. Furthermore, although a sputtering device is constructed using a vacuum chamber, the present invention can also be applied to a vapor deposition device, an ion blating device, etc. that also use a vacuum chamber.
以上述べたように本発明によれば、真空槽の内壁の汚れ
や、薄膜への不純物の混入、正常な薄膜形成を妨げる剥
離膜の落下等を防止できる。As described above, according to the present invention, it is possible to prevent stains on the inner wall of the vacuum chamber, contamination of impurities into the thin film, and falling of the peeling film that would impede normal thin film formation.
第１図は本発明になる薄膜形成装置の一実施例を示す真
空槽内の断面図、第２図は第１図の網状部材を示す平面
図、第３図は第１図の網状部材と板状部材との配置関係
を示す部分断面図、第４図、第５図は従来の薄膜形成装
置のうちのスパッタ装置の各−例を示す断面図、第６図
は第５図の装置の問題点を説明するための部分断面図、
第７図は従来の改良されたスパッタ装置の一例を示す断
面図である。
２１・・・真空槽、２２・・・ターゲット、る・・・試
料テーブル、 為・・・基板、δ・・・板状部材、 あ
・・・網状部材。
代理人 弁理士 則 近 憲 佑
同 宇治 弘
第１図
１１１４図
第５図FIG. 1 is a cross-sectional view of the inside of a vacuum chamber showing an embodiment of the thin film forming apparatus according to the present invention, FIG. 2 is a plan view showing the net-like member shown in FIG. 1, and FIG. FIGS. 4 and 5 are partial cross-sectional views showing the arrangement relationship with the plate-shaped member; FIGS. 4 and 5 are cross-sectional views showing examples of sputtering equipment in the conventional thin film forming apparatus; and FIG. A partial sectional view to explain the problem,
FIG. 7 is a sectional view showing an example of a conventional improved sputtering apparatus. 21...Vacuum chamber, 22...Target, R...Sample table, To...Substrate, δ...Plate member, A...Net member. Agent Patent Attorney Nori Ken Chika Yudo Hiroshi UjiFigure 1114Figure 5
Claims (1)
成する薄膜形成装置において、真空槽内にこの内壁側か
ら順番に板状部材、網状部材を重ね合せる如くして配設
せしめたことを特徴とする薄膜形成装置。In a thin film forming apparatus that uses a vacuum chamber to form a thin film on a substrate provided in the chamber, a plate-like member and a net-like member are arranged in the vacuum chamber so as to be stacked one on top of the other in order from the inner wall side. A thin film forming apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4193986A JPS62202075A (en) | 1986-02-28 | 1986-02-28 | Device for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4193986A JPS62202075A (en) | 1986-02-28 | 1986-02-28 | Device for forming thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62202075A true JPS62202075A (en) | 1987-09-05 |
Family
ID=12622184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4193986A Pending JPS62202075A (en) | 1986-02-28 | 1986-02-28 | Device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202075A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114964A (en) * | 1986-10-31 | 1988-05-19 | Tokyo Electron Ltd | Apparatus for forming thin film |
| JP2007051330A (en) * | 2005-08-18 | 2007-03-01 | Neos Co Ltd | Vacuum thin film deposition system |
| EP2354271A1 (en) * | 2010-02-09 | 2011-08-10 | Applied Materials, Inc. | Substrate protection device and method |
| CN103122451A (en) * | 2013-02-05 | 2013-05-29 | 吴江南玻华东工程玻璃有限公司 | Shakable L-shaped mesh-covered baffle |
| CN103403220A (en) * | 2010-10-21 | 2013-11-20 | 莱博德光学有限责任公司 | Device and process for coating a substrate |
-
1986
- 1986-02-28 JP JP4193986A patent/JPS62202075A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114964A (en) * | 1986-10-31 | 1988-05-19 | Tokyo Electron Ltd | Apparatus for forming thin film |
| JP2007051330A (en) * | 2005-08-18 | 2007-03-01 | Neos Co Ltd | Vacuum thin film deposition system |
| EP2354271A1 (en) * | 2010-02-09 | 2011-08-10 | Applied Materials, Inc. | Substrate protection device and method |
| CN103403220A (en) * | 2010-10-21 | 2013-11-20 | 莱博德光学有限责任公司 | Device and process for coating a substrate |
| JP2013544967A (en) * | 2010-10-21 | 2013-12-19 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Apparatus and method for coating the surface of a substrate |
| CN103122451A (en) * | 2013-02-05 | 2013-05-29 | 吴江南玻华东工程玻璃有限公司 | Shakable L-shaped mesh-covered baffle |
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