JPS62197916A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPS62197916A JPS62197916A JP3863186A JP3863186A JPS62197916A JP S62197916 A JPS62197916 A JP S62197916A JP 3863186 A JP3863186 A JP 3863186A JP 3863186 A JP3863186 A JP 3863186A JP S62197916 A JPS62197916 A JP S62197916A
- Authority
- JP
- Japan
- Prior art keywords
- iron
- osmium
- iron nitride
- ruthenium
- hexagonal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910001337 iron nitride Inorganic materials 0.000 claims abstract description 31
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 17
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 17
- 229910052742 iron Inorganic materials 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910000704 hexaferrum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は窒化鉄薄膜を磁性層として有する磁気記録媒体
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic recording medium having an iron nitride thin film as a magnetic layer.
本発明は六方晶窒化鉄を主成分とする薄膜を磁性層とし
てもつ磁気記録媒体において、六方晶窒化鉄の鉄をルテ
ニウム（Ｒｕ）とオスミウム（○Ｓ）を合計してｌＯ原
子％以下置換することにより、六方晶窒化鉄（ε−窒化
鉄）を主成分とする薄膜磁性層の保持力を向上させ、こ
れにより耐食性と耐摩耗性にすぐれ、高密度な薄膜磁気
記録媒体の実用を可能とするものである。The present invention provides a magnetic recording medium having a thin film mainly composed of hexagonal iron nitride as a magnetic layer, in which iron in hexagonal iron nitride is replaced with less than 1 atomic percent of ruthenium (Ru) and osmium (○S) in total. This improves the coercive force of the thin film magnetic layer whose main component is hexagonal iron nitride (ε-iron nitride), thereby enabling the practical use of high-density thin film magnetic recording media with excellent corrosion resistance and wear resistance. It is something to do.
蒸着法やスパッタ法などにより磁性層を形成する薄膜磁
気記録媒体は高飽和磁束密度であり、また磁性層の厚み
を薄くでき、表面の平滑性もすぐれているため高密度化
が可能であり、磁性層としてはＣｏ合金が使用されてお
り、この場合、耐食性、耐摩耗性を向上させるため表面
に保護層の形成が必要となる。Thin-film magnetic recording media in which the magnetic layer is formed by vapor deposition or sputtering have a high saturation magnetic flux density, and the magnetic layer can be made thinner and has an excellent surface smoothness, making it possible to increase the density. A Co alloy is used as the magnetic layer, and in this case, a protective layer must be formed on the surface to improve corrosion resistance and wear resistance.
一方、窒化鉄は強磁性体としてＦ ｅ 、、Ｎ、やＦｅ
４Ｎや六方晶窒化鉄であるε−窒化鉄（ＦｅヨＮで２＜
Ｘ≦３）があり、これら窒化鉄は耐食性、耐摩耗性にす
ぐれており、磁気記録媒体としても使用が可能であり、
雑誌「固体物理Ｊ １９８４年ＶＯＬ、１１．１ｂ１９
（７）７２１頁から７２７頁に詳しく述べられている。On the other hand, iron nitride is a ferromagnetic material such as Fe, N, or Fe.
4N and hexagonal iron nitride, ε-iron nitride (2 <
X≦3), and these iron nitrides have excellent corrosion resistance and wear resistance, and can be used as magnetic recording media.
Magazine “Solid State Physics J 1984 VOL, 11.1b19
(7) Described in detail on pages 721 to 727.
これら窒化鉄を薄膜化するには、窒化鉄は融点以下で分
解するため、Ｆｃを蒸発源とし、窒素ガスを導入しての
イオンブレーティング法、あるいはＦｅをターゲットと
し、窒素ガスを導入しての反応性スパッタ法、あるいは
窒化鉄をターゲットとしたスパッタ法などが利用される
。In order to make these iron nitrides into thin films, since iron nitride decomposes below its melting point, it is possible to use the ion blating method using Fc as an evaporation source and introducing nitrogen gas, or using Fe as a target and introducing nitrogen gas. A reactive sputtering method or a sputtering method using iron nitride as a target is used.
しかし、従来は窒化鉄自体は強い結晶磁気異方性を持た
ず、薄膜とした場合、磁気記録媒体として必要な保持力
を得ることができなかった。However, in the past, iron nitride itself did not have strong magnetocrystalline anisotropy, and when made into a thin film, it was not possible to obtain the coercive force necessary for a magnetic recording medium.
斜め蒸着等による形状異方性の付与も窒素ガスの影響の
ため効果が弱かった。The effect of imparting shape anisotropy by oblique vapor deposition or the like was weak due to the influence of nitrogen gas.
そこで本発明は上記欠点を解決することにより耐食性、
耐摩耗性にすぐれた窒化鉄Ｅｌ膜磁気記録媒体を実用に
供することを目的とする。Therefore, the present invention aims to improve corrosion resistance and improve corrosion resistance by solving the above drawbacks.
The purpose of this invention is to put into practical use an iron nitride El film magnetic recording medium with excellent wear resistance.
本発明では窒化鉄のうち六方晶窒化鉄（Ｆ ｅ。 In the present invention, among iron nitrides, hexagonal iron nitride (Fe) is used.
Ｎで２＜Ｘ≦３）を利用し、この鉄をルテニウム（Ｒｕ
）とオスミウム（Ｏｓ）とを合計で１０原子％置換し、
この鉄を一部置換した六方晶窒化鉄を主成分とする薄膜
を磁性層とする。Using 2<X≦3 in N, this iron can be converted to ruthenium (Ru
) and osmium (Os) by a total of 10 atomic percent,
A thin film mainly composed of hexagonal iron nitride in which iron is partially substituted is used as a magnetic layer.
この際、ルテニウムとオスミウムの鉄との置換は単独又
は複合のどちらでもよい。At this time, ruthenium and osmium may be replaced with iron either singly or in combination.
六方晶窒化鉄の鉄をルテニウムとオスミウムにより置換
することにより、磁気異方性が生じ保持力が増大する。By replacing iron in hexagonal iron nitride with ruthenium and osmium, magnetic anisotropy occurs and coercive force increases.
以下、実施例により詳細に説明する。 Hereinafter, this will be explained in detail using examples.
ルテニウム、オスミウムで置換された大方晶窒化鉄は、
ルテニウム、オスミウムと合金化されたＦｅ合金を蒸発
源あるいはターゲットとし、窒素ガスを導入するイオン
ブレーティング法、反応性スパッタ法や、ルテニウム、
オスミウムにより置換された大方晶窒化鉄をターゲット
とするスパッタ法が利用できる。The macrogonal iron nitride substituted with ruthenium and osmium is
Ion blating method, which uses Fe alloy alloyed with ruthenium and osmium as an evaporation source or target and introduces nitrogen gas, reactive sputtering method,
A sputtering method using an osmium-substituted orthogonal iron nitride target can be used.
実施例１
六方晶窒化鉄をターゲットとする２極高周波スパック法
により成膜した。Example 1 A film was formed by a bipolar high-frequency sppack method using hexagonal iron nitride as a target.
ターゲットは所定量のルテニウムで置換した鉄合金粉末
をＮＨ３とＨ８の混合ガス中で窒化し、これを成形する
ことにより得る。The target is obtained by nitriding iron alloy powder substituted with a predetermined amount of ruthenium in a mixed gas of NH3 and H8, and then molding the powder.
これをガラス基板上に０．２μｍに成膜する。This is formed into a film of 0.2 μm on a glass substrate.
この時のルテニウム置換量（原子％）と保持力（エルス
テッド）の特性は図の曲線ｌのようになり、ルテニウム
による置換により保持力が向上する。At this time, the characteristics of the amount of ruthenium substitution (atomic %) and the retention force (Oersted) are as shown by curve 1 in the figure, and the retention force is improved by the substitution with ruthenium.
実施例２
実施例１と同様にオスミウムにより置換した六方晶窒化
鉄薄膜をガラス基板上に０．２μｍ成膜した。Example 2 As in Example 1, a thin film of hexagonal iron nitride substituted with osmium was formed to a thickness of 0.2 μm on a glass substrate.
この時のオスミウム置換量（原子％）と保持力（エルス
テッド）の特性は図の曲線２のようになり、オスミウム
による置換により保持力が向上する。At this time, the characteristics of the amount of osmium substitution (atomic %) and the retention force (Oersted) are as shown by curve 2 in the figure, and the retention force is improved by the substitution with osmium.
実施例３
オスミウムを６原子％、ルテニウムを３原子％ずつ置換
した六方晶窒化鉄薄膜をガラス基板上に０．２μｍ成膜
した。Example 3 A hexagonal iron nitride thin film containing 6 at. % of osmium and 3 at. % of ruthenium was formed on a glass substrate to a thickness of 0.2 μm.
この時の保持力は８１０エルステツドであった。The holding force at this time was 810 oersted.
以上のようにルテニウム、オスミウムを単独又は複合し
て、大方晶窒化鉄の鉄と置換することにより薄膜の保持
力は増加するが、両者を合計して１０原子％を越えると
飽和磁化の減少が太きいため、実用的に両者の置ｔａｌ
は合計で１０％以下がよい。As mentioned above, the coercive force of the thin film is increased by replacing iron in the macrogonal iron nitride with ruthenium or osmium alone or in combination, but if the total amount of both exceeds 10 atomic %, the saturation magnetization decreases. Because it is thick, it is practical to place both
should be 10% or less in total.
基板としてはガラスの他にアルミニウム合金やポリイミ
ド、ポリエステルなどでもかまわない。The substrate may be made of aluminum alloy, polyimide, polyester, etc. in addition to glass.
なお、六方晶窒化鉄のほかに少量の磁気特性を損なわな
い程度にＦｅ、Ｎなどの他の窒化槽が混在してもよいが
、この場合、置換による保持力向上の効果はない。In addition to the hexagonal iron nitride, a small amount of other nitriding agents such as Fe and N may be mixed to the extent that the magnetic properties are not impaired, but in this case, there is no effect of improving the coercive force by substitution.
以上述べたように本発明によれば、大方晶窒化鉄を主成
分とする薄膜を磁性層とする７ｍ膜磁気媒体で、鉄をル
テニウム又はオスミウムを単独あるいは複合して合計１
０原子％以下置換することにより、飽和磁束密度など他
の磁気特性は実用的な値以下に減少させないで保持力を
高めさせることができ、これにより耐食性、耐摩耗性に
すぐれた高密度な窒化鉄薄膜磁気記録媒体の実用を可能
とするものである。As described above, according to the present invention, a 7-m film magnetic medium whose magnetic layer is a thin film mainly composed of orthogonal iron nitride is used, in which iron is combined with ruthenium or osmium alone or in combination for a total of
By substituting 0 atomic percent or less, it is possible to increase the coercive force without reducing other magnetic properties such as saturation magnetic flux density below practical values. This makes it possible to put iron thin film magnetic recording media into practical use.
図は置？Ａｆｆｉと保持力の特性を示す。 １・・・ルテニウム置換の特性曲線 ２・・・オスミウム置換の特性曲線 以上 出願人 セイコー電子工業株式会社 ５１Ｏ 置換量（原子刃） １ｊ＃量と保持ｌの関係図 Is there a diagram? Characteristics of Affi and holding power are shown. 1...Characteristic curve of ruthenium substitution 2...Characteristic curve of osmium replacement that's all Applicant: Seiko Electronics Industries Co., Ltd. 51O Replacement amount (atomic blade) 1j# Relationship diagram between quantity and retention l
Claims (1)
換した六方晶窒化鉄を主成分とする薄膜を磁性層として
もつ磁気記録媒体。A magnetic recording medium whose magnetic layer is a thin film mainly composed of hexagonal iron nitride, in which iron is replaced with ruthenium and osmium in a total of 10 atomic percent or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3863186A JPS62197916A (en) | 1986-02-24 | 1986-02-24 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3863186A JPS62197916A (en) | 1986-02-24 | 1986-02-24 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62197916A true JPS62197916A (en) | 1987-09-01 |
Family
ID=12530585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3863186A Pending JPS62197916A (en) | 1986-02-24 | 1986-02-24 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62197916A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0424415A (en) * | 1990-05-21 | 1992-01-28 | Sanyo Electric Co Ltd | Ignition timer circuit |
| US6303240B1 (en) * | 1989-04-03 | 2001-10-16 | Fuji Photo Film Co., Ltd. | Soft magnetic thin film |
-
1986
- 1986-02-24 JP JP3863186A patent/JPS62197916A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303240B1 (en) * | 1989-04-03 | 2001-10-16 | Fuji Photo Film Co., Ltd. | Soft magnetic thin film |
| JPH0424415A (en) * | 1990-05-21 | 1992-01-28 | Sanyo Electric Co Ltd | Ignition timer circuit |
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