JPS62193173A - Manufacture of image reading head - Google Patents
Manufacture of image reading headInfo
- Publication number
- JPS62193173A JPS62193173A JP61032733A JP3273386A JPS62193173A JP S62193173 A JPS62193173 A JP S62193173A JP 61032733 A JP61032733 A JP 61032733A JP 3273386 A JP3273386 A JP 3273386A JP S62193173 A JPS62193173 A JP S62193173A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- image reading
- photosensitive layer
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001017 electron-beam sputter deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はファクシミリ装置等に用いられる画像を読取る
ための画像読取ヘッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing an image reading head for reading images used in facsimile machines and the like.
（従来の技術）
従来より、静止画像あるいは走行する原稿画像をイメー
ジセンサで等倍で読取る画像読取装置が提案されている
。(Prior Art) Conventionally, image reading devices have been proposed that use an image sensor to read a still image or a moving document image at the same magnification.
一般に、縮小光学系を用いずに、一対一の関係で画像を
読取る等倍型画像読取装置には、読取分解能の間隔で、
−直線に配列した受光素子群を備えた画像読取ヘッドが
用いられている。In general, a 1:1 image reading device that reads images in a one-to-one relationship without using a reduction optical system has
- An image reading head with a group of light receiving elements arranged in a straight line is used.
第２図は、この従来より提案されてきた画像読取ヘッド
の一例を示す断面図で、この断面図には、それぞれ−個
の受光素子４０と走査用ＩＣ４１とが示されている。FIG. 2 is a sectional view showing an example of the conventionally proposed image reading head, and this sectional view shows - number of light receiving elements 40 and scanning ICs 41, respectively.
この図において、３１は例えばガラス板透明絶縁物基板
であり、その表面上に受光素子４０の共通電極となる透
明電極３２が設けである。この透明電極３２は、酸化イ
ンジウム・すず（ＩＴＯ）等をスパッタ法にて蒸着、ホ
トリソ工程を経てエツチングしたものである。３３は、
この共通透明電極３２上へ堆積形成された感光層である
非晶質シリコン層で透明電極３２側からＮ型層、■型層
、Ｐ型層と順次成っておシ、ホトリソ・エツチング工程
により各受光素子毎にドツト分離されている。In this figure, reference numeral 31 denotes, for example, a glass plate transparent insulator substrate, on the surface of which a transparent electrode 32 serving as a common electrode of the light receiving element 40 is provided. This transparent electrode 32 is made by depositing indium tin oxide (ITO) or the like by a sputtering method and etching it through a photolithography process. 33 is
The amorphous silicon layer, which is a photosensitive layer, is deposited on the common transparent electrode 32 and is sequentially formed from the transparent electrode 32 side as an N-type layer, a ■-type layer, and a P-type layer. Each light receiving element is separated into dots.
３４は、この感光層３３の端面を保護する保護絶縁膜で
あり、感光層３３の最上層であるＰ型層上の一部と共通
透明電極上との所定の部分にコンタクトの孔が、ホトリ
ソ・エツチング工程により開けである。さらに、これら
の上に全面にアルミ等による金属を蒸着し、ホトリソ・
エツチング工程により共通補助金属電極３５、個別電極
３６、ＩＣダイパッド３７、ＩＣ入力線３８等を形成し
、ＩＣ４１をＩＣダイノクツド３７上へ銀ペースト等に
より固定し、金などのワイヤ３９を用いて所定の場所と
電気的接続を行う。Reference numeral 34 denotes a protective insulating film that protects the end face of the photosensitive layer 33, and contact holes are formed at predetermined portions on a part of the P-type layer, which is the uppermost layer of the photosensitive layer 33, and on the common transparent electrode.・It is open due to the etching process. Furthermore, metal such as aluminum is deposited on the entire surface and photolithography is performed.
The common auxiliary metal electrode 35, the individual electrodes 36, the IC die pad 37, the IC input line 38, etc. are formed by the etching process, and the IC 41 is fixed onto the IC die nocturne 37 with silver paste or the like, and a wire 39 made of gold or the like is used to form a predetermined shape. Make electrical connections to the location.
この様にして完成した画像読取ヘッドは第２図に示す受
光素子３７の感光層３３へ入射した光の強弱に応じて、
電子正孔対が感光層３３中で発生し、この電子正孔対を
共通電極３２、個別電極３６で検出するものである。The image reading head completed in this way responds to the intensity of light incident on the photosensitive layer 33 of the light receiving element 37 shown in FIG.
Electron-hole pairs are generated in the photosensitive layer 33, and these electron-hole pairs are detected by the common electrode 32 and the individual electrodes 36.
（発明が解決しようとする問題点）
しかしながら、従来例の画像読取装置は、４回のホトリ
ソ・エツチング工程を行うだめに、歩留シが低下し、製
造コストが高くなるという問題点があった。(Problems to be Solved by the Invention) However, the conventional image reading device had the problem that the yield rate decreased and the manufacturing cost increased because the photolithography and etching processes were performed four times. .
本発明の目的は工程数を極力少なくし、製造歩留りの高
い画像読取ヘッドの製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing an image reading head that minimizes the number of steps and has a high manufacturing yield.
（問題点を解決するだめの手段）
本発明は上述の問題点を解決するために、画像読取へ７
ドの製造において、透明絶縁物基板上に共通透明電極の
パターンを選択的に形成する工程と、少なくとも前記共
通透明電極の所定部分を含む如く前記基板上に感光層の
パターンを選択的に形成する工程と、前記感光層上に個
別電極、ＩＣグイ・ぞンド、の各パターンを選択的に形
成するものであって且つそれぞれの端部が前記感光層の
端部より内側となる如く形成する工程と、前記個別電極
、前記感光層、前記共通透明電極からなる受光素子部を
走査駆動するための走査用ＩＣを前記ＩＣダイノノンノ
ド上搭載し、当該走査用ＩＣと前記個別電極とを電気的
に接続する工程とを具備するようにしたものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides seven methods for image reading.
the step of selectively forming a pattern of a common transparent electrode on a transparent insulating substrate; and selectively forming a pattern of a photosensitive layer on the substrate so as to include at least a predetermined portion of the common transparent electrode. and a step of selectively forming patterns of individual electrodes and IC guides on the photosensitive layer, and forming each pattern so that each end thereof is inside the end of the photosensitive layer. and a scanning IC for scanning and driving a light receiving element portion consisting of the individual electrode, the photosensitive layer, and the common transparent electrode is mounted on the IC diode non-nod, and the scanning IC and the individual electrode are electrically connected. The method includes a step of:
前記感光層は前記基板側よりＮ型層−８ド層、■型か、
あるいは前記感光層は前記基板側よりＮ型層−８Ｌ層、
工型ａ−Ｓｉ層、Ｐ型層−ＳｉＣ層を順次積層したもの
とすることができ、さらに前記感光層を前記個別電極を
マスクとしてＮ型層−８ド層に至らぬ程度にエツチング
して前記受光素子部を光検出ドツト単位で分離するよう
にしてもよい。The photosensitive layer is an N-type layer, an 8-d layer, and a ■-type from the substrate side.
Alternatively, the photosensitive layer is an N-type layer-8L layer from the substrate side,
A-type a-Si layer, P-type layer-SiC layer may be sequentially laminated, and the photosensitive layer is further etched using the individual electrodes as a mask to an extent that does not reach the N-type layer-8D layer. The light receiving element portion may be separated into photodetecting dots.
（作用）
本発明の製造方法によれば、ホトリソ・エツチング工程
が通常の場合で１回、ドツト間分離を行なう場合でも２
回ですみ、従来の方法に比ベニ種数を少なくすることが
できる。なお、感光層の最上層をＰ型層−ＳｉＣで形成
すればドント間分離しなくても十分にドツト間のリーク
電流を抑えることができる。(Function) According to the manufacturing method of the present invention, the photolithography/etching process is carried out once in the normal case, and twice in the case where separation between dots is performed.
The number of seeds required can be reduced compared to the conventional method. Note that if the uppermost layer of the photosensitive layer is formed of a P-type layer-SiC, the leakage current between the dots can be sufficiently suppressed without separating the dots.
（実施例）
以下第１図（Ａ）〜＠）を参照して、本発明の一実施例
を説明する。第１図囚〜（Ｅ）は受光素子の配列方向に
平行な方向から見た断面図であシ、それぞれ画像読取ヘ
ッドの各製造工程を示している。(Example) An example of the present invention will be described below with reference to FIGS. 1 to 1E are cross-sectional views viewed from a direction parallel to the arrangement direction of the light-receiving elements, each showing each manufacturing process of the image reading head.
（イ）工程Ａ（第１図（Ａ）参照）
１ノは、下地としての透明絶縁物基板で、例えばガラス
、合成樹脂その他任意好適の材料から成る基板である。(a) Step A (see FIG. 1(A)) No. 1 is a transparent insulating substrate as a base, for example, a substrate made of glass, synthetic resin, or any other suitable material.
この透明絶縁物基板１１上に各受光素子に共通な、共通
透明電極１２を被着形成させる。この共通透明電極１２
は、例えばインジウム錫酸化物（ＩＴＯ） 、その他の
光透過性電極材料で構成される。特にＩＴＯとする場合
には、インジウム錫酸化物に対し数チの錫酸化物を混合
し酸素含囲気中で電子ビーム蒸着あるいはスパッタで形
成するのが良い。また本発明の実施例の様に感光層とし
て、非晶質シリコン（ａ−８ｔ ）を用いる場合には、
ＩＴＯ上へ錫酸化物（５ｎ０２）を積層した方が好適で
ある。この様な共通透明電極１２は、所定の部分以外は
薄い金属板等でマスクを施し、蒸着等を行うことにより
形成される。A common transparent electrode 12 common to each light receiving element is formed on this transparent insulating substrate 11. This common transparent electrode 12
The electrode is made of, for example, indium tin oxide (ITO) or other optically transparent electrode material. In particular, when using ITO, it is preferable to mix several tin oxides with indium tin oxide and form the mixture by electron beam evaporation or sputtering in an oxygen-containing atmosphere. Furthermore, when amorphous silicon (a-8t) is used as the photosensitive layer as in the embodiments of the present invention,
It is preferable to stack tin oxide (5n02) on ITO. Such a common transparent electrode 12 is formed by masking other than a predetermined portion with a thin metal plate or the like, and performing vapor deposition or the like.
（ロ）工程Ｂ（第１図（Ｂ）参照）
次に感光層となるａ−Ｓｉ層１３を堆積する。このａ−
Ｓｉ層１３は、基板１１及び共通透明電極１２側より順
次Ｎ型層、■型層、及びＰ型層の三層構造から成ってい
る。このａ−８ノ層は、シランガス（５ｉＨ４）を５０
〜２００Ｐａの減圧下で高周波グロー放電で分解するこ
とによって、２００〜３００℃という低温で作製するこ
とが出来る。この作製工程において例えば５００〜１０
０００ ｐｐｍのホスフィンガス（ＰＨ３）を混合して
、第一層目となΣＮ型層を５０〜１００ＯＸの厚さに堆
積し、次に真空を破らずに連続でＳｉＨ４に対し微量（
１００ｐｐｍ以下）のジがランガス（Ｂ２Ｈ６）を混合
して、第二層目である■型層を０．５〜１．５μｍの厚
さに堆積し、さらにＳ ｉ Ｈ４に対して、５００〜１
１００００ｐｐのＢ２Ｈ６を混合して■型層上へ第三層
目であるＰ型層を５０〜１００ＯＸの厚さで真空を、破
らずに連続で積層する。このａ−Ｓｉ層１３を積層する
際は、共通透明電極１２の一部を薄い金属板等でマスク
を施し積層する。(B) Step B (see FIG. 1(B)) Next, an a-Si layer 13 which will become a photosensitive layer is deposited. This a-
The Si layer 13 has a three-layer structure consisting of an N-type layer, a ■-type layer, and a P-type layer in this order from the substrate 11 and common transparent electrode 12 sides. This a-8 layer was filled with 50% silane gas (5iH4).
By decomposing with high frequency glow discharge under reduced pressure of ~200 Pa, it can be produced at a low temperature of 200 to 300°C. In this manufacturing process, for example, 500 to 10
000 ppm of phosphine gas (PH3) was mixed, the first ΣN type layer was deposited to a thickness of 50-100OX, and then a trace amount (PH3) was added to SiH4 continuously without breaking the vacuum.
100 ppm or less) is mixed with dilan gas (B2H6) to deposit a second type layer to a thickness of 0.5 to 1.5 μm, and further, 500 to 1
10,000 pp of B2H6 is mixed and a third P-type layer is continuously laminated on the ■-type layer to a thickness of 50 to 100OX without breaking the vacuum. When laminating this a-Si layer 13, a part of the common transparent electrode 12 is masked with a thin metal plate, etc., and then laminated.
（ハ）工程Ｃ（第１図’ （Ｃ）参照）そして、これら
の上に全面にわたってアルミニウム、ニクロム等の金属
膜を電子ビーム蒸着、或いはスパッタ等で蒸着させる。(c) Step C (see FIG. 1'(C)) Then, a metal film such as aluminum or nichrome is deposited over the entire surface by electron beam evaporation or sputtering.
に）工程Ｄ（第１図０）参照）
次に金属膜２５をホトリソエツチングによりパターン化
して、個別電極１４、共通補助金属電極１７、ＩＣ用の
ダイノ母ツド１８、ＩＣ入力線１９等をそれぞれ形成す
る。なお、個別電極１４は感光層１３の端部より内側に
位置する如くパターン化する。その理由は個別電極１４
と共通電極１２との短絡防止のためである。Step D (see Figure 1 0)) Next, the metal film 25 is patterned by photolithography to form the individual electrodes 14, the common auxiliary metal electrode 17, the IC die motherboard 18, the IC input line 19, etc. Form each. Note that the individual electrodes 14 are patterned so as to be located inside the ends of the photosensitive layer 13. The reason is that the individual electrode 14
This is to prevent a short circuit between the common electrode 12 and the common electrode 12.
（ホ）工程Ｅ（第１図（ト））参照）
次に、走査用ＩＣ２０を前記ダイパッド１８上へ銀ペー
ストの様な導電性樹脂あるいは半田等で固定し、金線あ
るいはアルミ線からなるワイヤ２ノを用いてｒｃ２０と
個別電極１４あるいはＩＣ入力線１９とを電気的に接続
する。(E) Step E (see Figure 1 (G))) Next, the scanning IC 20 is fixed onto the die pad 18 with a conductive resin such as silver paste or solder, and wires made of gold wire or aluminum wire are fixed. The rc 20 and the individual electrode 14 or the IC input line 19 are electrically connected using a wire.
このようにして完成した画像読取ヘッドの平面図を第３
図に示す。この第３図の１−１’断面図が第１図（Ｅ）
に示した断面図である。壕だ第３図のＪ−Ｊ／断面図を
第４図に示す。第４図から明らかなように、感光層１３
はＮ型層−Ｓｉ層１３−１、■型層−８ｔ層１３−２、
Ｐ型層−Ｓｉ層からなっており、各受光素子１６は光検
出ドツト単位で分離されたものでなく連続状に形成され
ている。A plan view of the image reading head completed in this way is shown in the third figure.
As shown in the figure. This 1-1' cross-sectional view of Figure 3 is Figure 1 (E).
FIG. Figure 4 shows a JJ/cross-sectional view of the trench in Figure 3. As is clear from FIG. 4, the photosensitive layer 13
are N-type layer-Si layer 13-1, ■-type layer-8T layer 13-2,
It is composed of a P-type layer and a Si layer, and each light receiving element 16 is not separated into photodetecting dots but is formed continuously.
この様に構成した画像読取ヘッドは、第１図＠）の矢印
で示した光が°透明絶縁物基板１１、共通透明電極１２
を通して受光素子１６の感光層１３へ到達する構造とな
っている。なお、上述の実施例では感光層１３をＮ型層
−Ｓｉ層１３−１、■型層−Ｓｉしているが、この場合
缶受光素子間で若干リーク電流発生することもある。こ
のリーク電流をおさえるために、Ｐ型層−Ｓｉ層１３−
３の代りにＰ型層−８ノＣ層を積層してもよい。あるい
は第５図に示す他の実施例の如くＩｃ２ｏを固定する前
に、画像読取ヘッドをＣＦ４（数チ酸素添加）のプラズ
マにさらして、Ｎ型Ｈｚｓ−１迄は至らぬ感光層１３を
金属層１４．１８．１９をマスクとして除去して光検出
ドツト間の分離を行なってもよい。In the image reading head configured in this way, the light indicated by the arrow in FIG.
It has a structure in which it reaches the photosensitive layer 13 of the light receiving element 16 through the light receiving element 16 . In the above-described embodiment, the photosensitive layer 13 is composed of an N-type layer-Si layer 13-1 and a ■-type layer-Si, but in this case, some leakage current may occur between the can light-receiving elements. In order to suppress this leakage current, the P-type layer-Si layer 13-
Instead of 3, P-type layers and 8 C layers may be laminated. Alternatively, as in another embodiment shown in FIG. 5, before fixing Ic2o, the image reading head is exposed to plasma of CF4 (several tons of oxygen added), and the photosensitive layer 13, which does not reach N-type Hzs-1, is exposed to metal. Layers 14, 18, 19 may be removed as a mask to provide separation between the photodetector dots.
（発明の効果）
上述した説明から明らかな様に、この発明の画像読取ヘ
ッドは、透明導電膜を蒸着時に所定の部分のみ設ける様
にし、感光層であるＮ、Ｉ、Ｐ型のａ−Ｓｉ層を、堆積
時に所定の部分のみ設ける様にしただめに、従来、４回
のホトリソエツチング工程があったのを１回のホトリソ
エツチング工程で構成できる。(Effects of the Invention) As is clear from the above description, in the image reading head of the present invention, the transparent conductive film is provided only in a predetermined portion during vapor deposition, and the photosensitive layer is made of N, I, and P type a-Si. Since the layer is deposited only in predetermined portions during deposition, a single photolithographic process can be used instead of the four conventional photolithographic processes.
従って、製造工程が簡略化し、製造歩留りが向上し、製
造コストが低減するという効果が期待できる。Therefore, it can be expected that the manufacturing process will be simplified, the manufacturing yield will be improved, and the manufacturing cost will be reduced.
また感光層の最上層をＰ型層−ＳｉＣとするか、あるい
は個別電極をマスクとして感光層のＰ型層もしくはＰ型
層、■型層をエツチングして光検出ドツト間を分離する
ことにより、各受光素子間のリーク電流を抑えることが
できる。In addition, by making the top layer of the photosensitive layer a P-type layer-SiC, or by etching the P-type layer, P-type layer, or ■-type layer of the photosensitive layer using the individual electrodes as a mask, the photodetection dots are separated. Leakage current between each light receiving element can be suppressed.
このため、本発明の画像読取ヘッドは、ファクシミリ等
の画像読取装置に適用して特に好適である。Therefore, the image reading head of the present invention is particularly suitable for application to image reading devices such as facsimiles.
第１図（５）〜（ト））は本発明に係る画像読取ヘッド
の製造工程図、第２図は従来の画像読取ヘッドの構成を
示す断面図、第３図は本発明に係る画像読取ヘッドの平
面図、第４図は第３図のＪ −Ｊ’断面図、第５図は本
発明の他の実施例の断面図。
１１・・・透明絶縁物基板、１２・・・共通透明電極、
１３−・・感光層、１３−１−Ｎ型層−Ｓｉ層、１３−
２・ ｒ型層−Ｓｉ層、１３−３ ・Ｐ型層−Ｓｉ層、
１４−・−個別電極、１６・・・受光素子、１７・・・
共通補助電極、１８・・・ＩＣダイノぐラド、１９・・
・ＩＣ入力線、２゜・・・走査用ＩＣ１２１・・・ワイ
ヤ、２５・・・金属膜。
特許出願人 沖電気工業株式会社
（Ｂ）
（Ｄ）
本発明１メシリシ／ｌｐ訃Ｗスヘ＝ｚＫの一！、造工擢
図第１図
４２条＃Ｉ遣４１ル取べｌドめ塙氏
第２図
第６図1(5) to (g)) are manufacturing process diagrams of the image reading head according to the present invention, FIG. 2 is a cross-sectional view showing the structure of a conventional image reading head, and FIG. 3 is a manufacturing process diagram of the image reading head according to the present invention. FIG. 4 is a plan view of the head, FIG. 4 is a sectional view taken along line J-J' in FIG. 3, and FIG. 5 is a sectional view of another embodiment of the present invention. 11... Transparent insulator substrate, 12... Common transparent electrode,
13-...Photosensitive layer, 13-1-N type layer-Si layer, 13-
2. R-type layer - Si layer, 13-3 ・P-type layer - Si layer,
14--Individual electrode, 16... Light receiving element, 17...
Common auxiliary electrode, 18...IC dyno grad, 19...
・IC input line, 2°...Scanning IC121...Wire, 25...Metal film. Patent Applicant: Oki Electric Industry Co., Ltd. (B) (D) This invention 1 Meshirisi/lp Wsuhe = zK 1! , construction plan, Figure 1, Article 42, #I, 41, Takeru Dome Hanawa, Figure 2, Figure 6.
Claims (4)
択的に形成する工程と、 少なくとも前記共通透明電極の所定部分を含む如く前記
基板上に感光層のパターンを選択的に形成する工程と、 前記感光層上に個別電極、ＩＣダイパッド、の各パター
ンを選択的に形成するものであって且つそれぞれの端部
が前記感光層の端部より内側となる如く形成する工程と
、 前記個別電極、前記感光層、前記共通透明電極からなる
受光素子部を走査駆動するための走査用ＩＣを前記ＩＣ
ダイパッド上に搭載し、当該走査用ＩＣと前記個別電極
とを電気的に接続する工程とを具備することを特徴とす
る画像読取ヘッドの製造方法。(1) selectively forming a common transparent electrode pattern on a transparent insulating substrate; and selectively forming a photosensitive layer pattern on the substrate so as to include at least a predetermined portion of the common transparent electrode. , a step of selectively forming patterns of individual electrodes and IC die pads on the photosensitive layer, and forming each pattern such that the end portions of the individual electrodes and the IC die pads are located inside the end portions of the photosensitive layer; , a scanning IC for scanning and driving a light receiving element section consisting of the photosensitive layer and the common transparent electrode;
A method of manufacturing an image reading head, comprising the step of mounting the scanning IC on a die pad and electrically connecting the scanning IC and the individual electrodes.
型ａ−Ｓｉ層、Ｐ型ａ−Ｓｉ層を順次積層したものであ
ることを特徴とする特許請求の範囲第１項記載の画像読
取ヘッドの製造方法。(2) The photosensitive layer is an N-type a-Si layer, an I-type a-Si layer, an I-type
2. The method of manufacturing an image reading head according to claim 1, wherein a type a-Si layer and a P-type a-Si layer are sequentially laminated.
型ａ−Ｓｉ層、Ｐ型ａ−ＳｉＣ層を順次積層したもので
あることを特徴とする特許請求の範囲第１項記載の画像
読取ヘッドの製造方法。(3) The photosensitive layer is an N-type a-Si layer, an I-type a-Si layer, an I
2. The method of manufacturing an image reading head according to claim 1, wherein a type a-Si layer and a P-type a-SiC layer are sequentially laminated.
−Ｓｉ層に至らぬ程度にエッチングして前記受光素子部
を光検出ドット単位で分離することを特徴とする特許請
求の範囲第２項または第３項記載の画像読取ヘッドの製
造方法。(4) The photosensitive layer is N-type a using the individual electrode as a mask.
-The method for manufacturing an image reading head according to claim 2 or 3, wherein the photodetecting element portion is separated in units of photodetection dots by etching to a degree that does not reach the Si layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61032733A JPS62193173A (en) | 1986-02-19 | 1986-02-19 | Manufacture of image reading head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61032733A JPS62193173A (en) | 1986-02-19 | 1986-02-19 | Manufacture of image reading head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193173A true JPS62193173A (en) | 1987-08-25 |
Family
ID=12367035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61032733A Pending JPS62193173A (en) | 1986-02-19 | 1986-02-19 | Manufacture of image reading head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193173A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5746584A (en) * | 1995-03-13 | 1998-05-05 | Zexel Corporation | Inner cam type fuel injection pump having modified plungers |
-
1986
- 1986-02-19 JP JP61032733A patent/JPS62193173A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5746584A (en) * | 1995-03-13 | 1998-05-05 | Zexel Corporation | Inner cam type fuel injection pump having modified plungers |
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