JPS62173435A - Thin film diode for display device - Google Patents
Thin film diode for display deviceInfo
- Publication number
- JPS62173435A JPS62173435A JP61016027A JP1602786A JPS62173435A JP S62173435 A JPS62173435 A JP S62173435A JP 61016027 A JP61016027 A JP 61016027A JP 1602786 A JP1602786 A JP 1602786A JP S62173435 A JPS62173435 A JP S62173435A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- display device
- film diode
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 50
- 239000011229 interlayer Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示装置用薄膜ダイオードに関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film diode for a liquid crystal display device.
液晶、ＥＬ、ＥＣ，ＦＤＰ、蛍光表示等の各種表示装置
はいずれも実用化段階に達し、現在の目標は高密度のマ
トリクス型表示にあるといえる。Various display devices such as liquid crystal, EL, EC, FDP, and fluorescent displays have all reached the stage of practical use, and it can be said that the current goal is high-density matrix type displays.
マ） ＩＪクス駆動に問題のある表示方式では能動付加
素子を用いた所謂「アクティブ・マトリクス」法が有効
である。M) For display systems that have problems with IJ drive, the so-called "active matrix" method using active additive elements is effective.
表示装置用能動素子（アクティブ素子）としてのダイオ
ード素子は、第４図に示すような構造をしている。第４
図に於いて４１は基板、４２は第１電極、４３は層間絶
縁層、４４は第２電極、４５はＰＩＮ接合を有する半導
体層であり、４６は能動素子部、４７はコンタクト部で
ある。第４図に示すダイオードは、第１電極４２及び、
半導体層４５が層間絶縁層４６により全面覆われている
ため、第２電極４４のエツチングの際に、異種物質が同
時にエツチング液に触れる事がなく、局部電池効果或は
、エツチング速度差による下地層への影響は少なく、第
１電極４２と第２電極４４とのコンタクトは、比較的安
定であった。A diode element as an active element for a display device has a structure as shown in FIG. Fourth
In the figure, 41 is a substrate, 42 is a first electrode, 43 is an interlayer insulating layer, 44 is a second electrode, 45 is a semiconductor layer having a PIN junction, 46 is an active element portion, and 47 is a contact portion. The diode shown in FIG. 4 includes a first electrode 42 and
Since the semiconductor layer 45 is completely covered by the interlayer insulating layer 46, different substances do not come into contact with the etching solution at the same time when the second electrode 44 is etched, and the underlying layer is not affected by the local cell effect or by the difference in etching speed. The contact between the first electrode 42 and the second electrode 44 was relatively stable.
しかしながら第４図に示す従来のダイオード素子は、表
示電極に第１電極４２を利用する場合、表示電極上に層
間絶縁層４６がある。眉間絶縁層４６があると表示媒体
に印加される電圧が減少するとともに、層間絶縁層４６
の膜厚バラツキにより、表示にバラツキを生じてしまう
。又、表示媒体なしにダイオード特性を評価する場合、
配線に外部電圧を供給し、特性を評価しなくてはならな
し・、配線は表示電極と比較して面積が小さく、高密度
になるほどこの差は大きくなる。測定端子（プローバー
の針）を配線上へ立てる場合、大面積を自動で測定する
事は難しく、又、配線断線をする可能性があり、測定端
子を表示電極上へ立てる事が必要になる。そこで表示電
極上の層間絶縁層４６を除去する事が必要になる。層間
絶縁層４３を除去する事により、第２電極４４のエツチ
ングの際に第１電極４２がエツチング液にさらされる事
になる。又、第４図に示したダイオード素子は、第１電
極４２、半導体層４５、層間絶縁層４３、第２電極４４
０４回のパターニングが必要であり、とくに層間絶縁層
４３のパターニップζつ際のマスク合せ精度が重要であ
り、そのため歩留りの低下、コストの上昇をまねく欠点
がある。そのため層間絶縁層４６を省き、そのかわりに
、抵抗が制御されたＰＩＮ接合を有する半導体層により
、第１電極と第２電極を分離したダイオードが考えられ
る。第４図に於ける表示電極上の絶縁層を除去した構造
のダイオード及び、層間絶縁層４６を全て除去した構造
のダイオードの場合、第２電極４４をエツチングする際
に、第１電吸４２或は半導体層４５がエツチング液に触
れるため、第１電極４２或は第２電極４４を局部的にエ
ツチングし、第１電極と第２電極のコンタクト（接続）
抵抗のバラツキ、ダイオード特性のバラツキ或は、電極
の断線が生じ歩留り及び表示品質の低下をまねいてしま
う。又、大面積化の際、配線抵抗を小さくし、所定時間
に各画素にあるダイオードへ目的の電荷を供給する必要
がある。However, in the conventional diode element shown in FIG. 4, when the first electrode 42 is used as the display electrode, there is an interlayer insulating layer 46 on the display electrode. The presence of the glabellar insulating layer 46 reduces the voltage applied to the display medium, and the interlayer insulating layer 46 reduces the voltage applied to the display medium.
Variations in the film thickness cause variations in display. Also, when evaluating diode characteristics without a display medium,
An external voltage must be supplied to the wiring to evaluate its characteristics.The wiring has a smaller area than the display electrode, and this difference increases as the density increases. When the measurement terminal (prober needle) is placed on the wiring, it is difficult to automatically measure a large area, and there is a possibility of the wiring breaking, so it is necessary to place the measurement terminal on the display electrode. Therefore, it is necessary to remove the interlayer insulating layer 46 on the display electrode. By removing the interlayer insulating layer 43, the first electrode 42 is exposed to the etching solution when the second electrode 44 is etched. Further, the diode element shown in FIG. 4 includes a first electrode 42, a semiconductor layer 45, an interlayer insulating layer 43, and a second electrode 44.
04 times of patterning is required, and the accuracy of mask alignment is especially important when forming the pattern nip of the interlayer insulating layer 43, which has the disadvantage of lowering yield and increasing cost. Therefore, a diode can be considered in which the interlayer insulating layer 46 is omitted and the first electrode and the second electrode are separated by a semiconductor layer having a PIN junction with controlled resistance. In the case of a diode having a structure in which the insulating layer on the display electrode is removed and a diode having a structure in which the interlayer insulating layer 46 is completely removed in FIG. Since the semiconductor layer 45 comes into contact with the etching solution, the first electrode 42 or the second electrode 44 is locally etched to form a contact (connection) between the first and second electrodes.
Variations in resistance, variations in diode characteristics, or disconnection of electrodes may occur, resulting in a reduction in yield and display quality. Furthermore, when increasing the area, it is necessary to reduce wiring resistance and supply a desired charge to the diode in each pixel at a predetermined time.
本発明の目的は上記欠点を解消し、高密度或は大画面化
に対し、歩留りが向上し、コストの低い表示装置用薄膜
ダイオードを提供することである。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks, and to provide a thin film diode for display devices that can be used in high density or large screens, has an improved yield, and is low in cost.
本発明は、前記問題点を解決するため、第１電甑（下電
極）を透明電極（ＩＴＯ：酸化インジウム錫膜、或は、
ＳｎＯ，、：酸化錫膜）にし、第２電翫（上電極）をシ
リコンを含むアルミニウム（Ａｌ：Ｓｉ）にした。さら
に、局部電池効果の低下のために、シリコンを含むアル
ミニウムのエツチング残渣を、第２電極部以外に残す構
造にした。In order to solve the above problems, the present invention replaces the first electrode (lower electrode) with a transparent electrode (ITO: indium tin oxide film or
The second electrode (upper electrode) was made of aluminum containing silicon (Al:Si). Furthermore, in order to reduce the local battery effect, a structure was adopted in which the etching residue of aluminum containing silicon is left in areas other than the second electrode part.
第１図は、本発明のダイオードの構造を示す図である。 FIG. 1 is a diagram showing the structure of a diode of the present invention.
第１図（Ａ）は、画素部を示す平面図、（Ｂ）は、第１
図←＼〕におけろＡ Ａ線の断面図である。第１図シ
て於いて、１は基板、２は第１電極でＩＴＯ１６はＰ
Ｉ Ｎ接合を有する半導体層、４は第２電極でシリコン
を含むアルミニウムで形成されている。FIG. 1(A) is a plan view showing the pixel section, and FIG. 1(B) is the first
It is a cross-sectional view taken along line AA in Figure ←\]. In Figure 1, 1 is the substrate, 2 is the first electrode, and ITO 16 is P
A semiconductor layer 4 having an I N junction is a second electrode made of aluminum containing silicon.
５は第１屯極２と第２電極４とのコンタクト（接続）部
、６は第１電極２、半導体層６及び第２電極４から成る
アクティブ部である。半導体層乙の内、最下層の半導体
膜のシート抵抗を１０Ｉ０Ω以上にし、かつ、ＰＩＮ接
合にした。又、シリコンを含むアルミニウムで形成され
た第２電極は、リン酸に硝酸或は、硝酸及び酢酸を混合
したエツチング液によりエツチングした。第２図は、本
発明の他の実施例を示す断面図である。第２図に於いて
、１１は基板、１２は第１電甑（ＩＴＯ）、１６はＰＩ
Ｎ接合を有する半導体層、１４は第２電極（シリコンを
含むアルミニウム）、１５は第２電榎１４をリン酸に硝
酸或は、硝酸及び酢酸を混合したエツチング液でエツチ
ングした際のエツチング残渣、１６は第１電極１２と第
２電翫１４のコンタクト部、１７は第１電極１２、半導
体層１６及び第２電極１４から成るアクティブ部、１８
は各画素のアクティブ部１７へ外部より信号 ゛を供給
する駆動電施部である。第１電唖１２及び基板１１上に
第２電極のエツチング残渣１５がある。又、４堅動電啄
部１８が断線すると表示装置の品質が著しく低下するた
め、断線防止のために、駆動電極部１８を第１電極１２
及び第２電甑１４の２層配線にした。5 is a contact (connection) portion between the first electrode 2 and the second electrode 4, and 6 is an active portion consisting of the first electrode 2, the semiconductor layer 6, and the second electrode 4. The sheet resistance of the lowest semiconductor film of semiconductor layer B was set to 10I0Ω or more, and a PIN junction was formed. The second electrode made of aluminum containing silicon was etched using an etching solution containing phosphoric acid and nitric acid, or a mixture of nitric acid and acetic acid. FIG. 2 is a sectional view showing another embodiment of the invention. In Fig. 2, 11 is the substrate, 12 is the first electric oven (ITO), and 16 is the PI
A semiconductor layer having an N junction, 14 a second electrode (aluminum containing silicon), 15 an etching residue when the second electrode 14 is etched with an etching solution containing phosphoric acid and nitric acid, or a mixture of nitric acid and acetic acid; 16 is a contact part between the first electrode 12 and the second electric wire 14; 17 is an active part consisting of the first electrode 12, the semiconductor layer 16 and the second electrode 14; 18
1 is a drive power supply unit that supplies a signal from the outside to the active part 17 of each pixel. There are etching residues 15 of the second electrode on the first electrode 12 and the substrate 11 . In addition, if the four rigid drive electrode parts 18 are disconnected, the quality of the display device will be significantly degraded, so in order to prevent the disconnection, the drive electrode part 18 is
and a two-layer wiring of the second electrical box 14.
第３図は、本発明のさらに他の実施例を示す断面図であ
る。第３図に於いて、２１は基板、２２は第１電極（Ｉ
ＴＯ）、２６は半導体層２４へ光の入射を防止するため
の光シールド層（Ｃｒ）、２４はＰＩＮ接合を有する半
導体層、２６は層間絶縁層、２７は第２電極（シリコン
を含むアルミニウム）、２８は第２電極２７をリン酸に
硝酸或は、硝酸及び酢酸を混合したエツチング液でエツ
チングした際のエツチング残渣である。シリコンを含む
アルミニウムで形成された第２電極のエツチング液は、
リン酸だけではＩＴＯがエツチングされ、表示品質が悪
くなる。２９は第１電極２２と第２電極２７のコンタク
ト部、６０は第１電極２２、光シールド層２６、半導体
層２４、及び第２電極２７から成るアクティブ部、６１
は各画素のアクティブ部６０へ外部より信号を供給する
駆動電極部、６２は第１電極２２上の層間絶縁層２６が
エツチングされた表示部である。駆動電極部３１が断線
すると表示装置の品質が著しく低下するため断線防止の
ために、駆動電極部６１を第１電極２２、層間絶縁層２
６及び第２電極２７にし、所定の位置に層間絶縁層２６
のコンタクトホールを形成し、第１電極２２と第２電極
２７とのコンタクトを取る構造にした。又、液晶表示装
置に利用する場合、液晶セルのセル厚を均一にするタメ
、ファイバー或は、ビーズ等のスペーサーを基板上へち
りばめる。この際スペーサーによる駆動電極部の断線を
防止するため、駆動電極部のコンタクトホールをスペー
サーより大きくした。又、半導体層２４のスペーサーに
よる破壊を防止するため、アクティブ部６０に形成され
ているコンタクトホールをスペーサーより小さくした。FIG. 3 is a sectional view showing still another embodiment of the present invention. In FIG. 3, 21 is the substrate, 22 is the first electrode (I
TO), 26 is a light shield layer (Cr) for preventing light from entering the semiconductor layer 24, 24 is a semiconductor layer having a PIN junction, 26 is an interlayer insulating layer, 27 is a second electrode (aluminum containing silicon) , 28 are etching residues when the second electrode 27 is etched with an etching solution containing phosphoric acid and nitric acid, or a mixture of nitric acid and acetic acid. The etching solution for the second electrode made of aluminum containing silicon is
If only phosphoric acid is used, ITO will be etched and the display quality will deteriorate. 29 is a contact portion between the first electrode 22 and the second electrode 27; 60 is an active portion consisting of the first electrode 22, the light shield layer 26, the semiconductor layer 24, and the second electrode 27; 61;
Reference numeral 62 designates a drive electrode portion that supplies signals from the outside to the active portion 60 of each pixel, and 62 a display portion in which the interlayer insulating layer 26 on the first electrode 22 is etched. If the drive electrode section 31 is disconnected, the quality of the display device will be significantly degraded. To prevent the drive electrode section 31 from disconnecting, the drive electrode section 61 is connected to the first electrode 22 and the interlayer insulating layer 2.
6 and the second electrode 27, and the interlayer insulating layer 26 is placed at a predetermined position.
A contact hole was formed to establish contact between the first electrode 22 and the second electrode 27. When used in a liquid crystal display device, spacers such as fibers or beads are sprinkled on the substrate to make the cell thickness of the liquid crystal cell uniform. At this time, in order to prevent disconnection of the drive electrode part due to the spacer, the contact hole of the drive electrode part was made larger than the spacer. Further, in order to prevent the semiconductor layer 24 from being destroyed by the spacer, the contact hole formed in the active portion 60 is made smaller than the spacer.
第５図は、スペーサーとコンタクトホールの大きさを示
す図である。第５図に於いて、２１は基板、２２は第１
電極（ＩＴＯ）、２３は光シールド層、２４は半導体層
（アモルファスシリコン）、２６は層間絶縁層（Ｓ１０
２）、２７は第２電極（シリコンを含むアルミニウム）
、６５は駆動電極部のコンタクトホール、６６はアクテ
ィブ部のコンタクトホール、３７はスペーサーである。FIG. 5 is a diagram showing the sizes of spacers and contact holes. In FIG. 5, 21 is the substrate, 22 is the first
electrode (ITO), 23 is a light shield layer, 24 is a semiconductor layer (amorphous silicon), 26 is an interlayer insulating layer (S10
2), 27 is the second electrode (aluminum containing silicon)
, 65 is a contact hole for the drive electrode portion, 66 is a contact hole for the active portion, and 37 is a spacer.
第１図及び第２図に示した薄膜ダイオードは半導体層の
一部が基板上へ出ているため、基板側より光の入射があ
り、強力な光の照射によりダイオードのリーク電流が増
加するが、層間絶縁層の形成及びバターニング工程がな
く、コストの低下及び歩留りの向上ができる。又、第３
図に示した薄膜ダイオードは、半導体層２４が光シール
ド層２３及び第２電極２７（シリコンを含むアルミニウ
ム）ではさまれて℃・るため、光の入射がなく、強力な
光の照射下におし・ても十分な特性が得られる。両構造
のダイオードは、第２電極をエツチングする際に、エツ
チング液が第１電極及び下層膜と接触するが、シリコン
を含むアルミニウムを第２電極に利用する事により、局
部的にサイドエツチングが生じたり、下地層がエツチン
グ或は破壊される事がなく、信明電％ （Ｉ Ｔ Ｏ或
は５ｎＯ２）及び半導体層、とくシ（低温で大面積に均
一に膜形成できろアモルファスシリコン（ａ−８ｉ）、
アモルファスシリコンカーバイド（ａ−３ｉ：ｃ）或は
アモルファスシリコンナイトライド（ａ−３ｉ：Ｎ）と
のコンタクト抵抗が小さく、バラツキが少な℃・安定な
コンタクトが得られろ。又、シリコンを含むアルミニウ
ムのエツチング残渣を残す事により、第１電極（ＩＴＯ
或はＳ ｎ ０２ ）等のエツチング液への接触面積が
減少し、局部的なエツチングを防止し、特性の均一なダ
イオードになる。又、シリコンがアルミニウムへ混入さ
れている事により、ＩＴＯ或は、ＳｎＯ２に対して密着
力がよく、基板の表示装置への応用の際の剥れかない。In the thin film diode shown in Figures 1 and 2, part of the semiconductor layer is exposed above the substrate, so light is incident from the substrate side, and the leakage current of the diode increases due to strong light irradiation. , there is no formation of an interlayer insulating layer and no patterning process, resulting in lower costs and higher yields. Also, the third
In the thin film diode shown in the figure, since the semiconductor layer 24 is sandwiched between the light shield layer 23 and the second electrode 27 (aluminum containing silicon), no light enters the diode, and it is not exposed to strong light irradiation. Sufficient characteristics can be obtained even if In diodes with both structures, when etching the second electrode, the etching solution comes into contact with the first electrode and the underlying film, but by using aluminum containing silicon for the second electrode, side etching occurs locally. The underlying layer is not etched or destroyed, and it is possible to form amorphous silicon (ITO or 5nO2) and semiconductor layers uniformly over a large area at low temperatures. ),
A stable contact with amorphous silicon carbide (a-3i:c) or amorphous silicon nitride (a-3i:N) with low contact resistance and little variation at °C can be obtained. In addition, by leaving an etching residue of aluminum containing silicon, the first electrode (ITO
Alternatively, the area of contact with an etching solution such as S n 02 ) is reduced, preventing local etching, resulting in a diode with uniform characteristics. Furthermore, since silicon is mixed into aluminum, it has good adhesion to ITO or SnO2, and does not peel off when the substrate is applied to a display device.
第６図は本発明のダイオードをリング接続して液晶を駆
動する場合の回路図である。なお実施例では第１電極よ
りＰ、Ｉ、Ｈのダイオードを例にしたが、Ｎ、■、Ｐの
順に積層したダイオードでも同じである。FIG. 6 is a circuit diagram when the diodes of the present invention are connected in a ring to drive a liquid crystal. In the embodiment, diodes of P, I, and H are used as an example from the first electrode, but the same applies to diodes stacked in the order of N, ■, and P.
以上の説明から明らかなように、本発明は、層間絶縁層
を有しない、第１電極と第２電極とが半導体層により分
離され、第１電極を表示電極とする薄膜ダイオード或は
、第１電極と第２電極とが半導体層及び絶縁層により分
離され、第１電極を表示電極とし、表示電極上の層間絶
縁層を除去した薄膜ダイオードで、第２電極が第１電極
（ＩＴＯ或はＳｎＯ□）及び半導体層との数種のコンタ
クトを有する薄膜ダイオードにおいて、第２電極をシリ
コンを含むアルミニウムにする事によりコンタクト抵抗
が小さく、均一な特性を有する薄膜ダイオードを実現す
ることができる。又、第２電極のエツチングの際にエツ
チング残渣を残す事により、局部的エツチングの少ない
良好なダイオードが得られる。又、本薄膜ダイオードを
液晶表示装置に利用する事により、高密度表示或は、大
型表示が可能となり、液晶表示装置の発展に本発明が寄
与するものである。As is clear from the above description, the present invention provides a thin film diode that does not have an interlayer insulating layer, a first electrode and a second electrode are separated by a semiconductor layer, and the first electrode is used as a display electrode. A thin film diode in which an electrode and a second electrode are separated by a semiconductor layer and an insulating layer, the first electrode is used as a display electrode, and the interlayer insulating layer on the display electrode is removed, and the second electrode is separated from the first electrode (ITO or SnO □) and a thin film diode having several types of contacts with a semiconductor layer, by making the second electrode from aluminum containing silicon, a thin film diode with low contact resistance and uniform characteristics can be realized. Furthermore, by leaving an etching residue when etching the second electrode, a good diode with less local etching can be obtained. Furthermore, by utilizing the present thin film diode in a liquid crystal display device, high-density display or large-sized display becomes possible, and the present invention contributes to the development of liquid crystal display devices.
第１図〜第３図、及び第５図は本発明に基づ〈実施例を
示し、第１四回は表示装置用薄膜ダイオードの構造を示
す画素部の平面図、第１図（Ｂｌは第１四回におけるＡ
−Ａ線断面図、第２図は他の実施例を示す断面図、第３
図はさらに他の実施例を示す断面図、第５図はスペーサ
ーとコンタクトホールの大きさを示す断面図、第４図は
従来の表示装置用薄膜ダイオードの構造を示す断面図、
第６図は本発明の表示装置用薄膜ダイオードをリング接
続して液晶を駆動する回路図。
１．１１．２１・・・・・・基板、
２．１２．２２・・・・・・第１電極（ＩＴＯ）、６．
１６．２４・・・・・・半導体層、４．１４．２７・・
・・・・第２電極（シリコンを含むアルミニウム）、
５．１６．２９・・・・・・コンタクト部、６．１７．
６０・・・・・・アクティブ部。
第１図
（Ａ）
（Ｂ）
６７クテイブ韻
３、ｗ鼻ｗ ２第１電！（ＩＴＯ）第２図
第３図
第４図
第６図
ｂＪ ゲ−４エートFigures 1 to 3 and Figure 5 show examples based on the present invention; Part 14 is a plan view of a pixel section showing the structure of a thin film diode for a display device, and Figure 1 (Bl is A in the 14th session
- A sectional view, Figure 2 is a sectional view showing another embodiment, and Figure 3 is a sectional view showing another embodiment.
The figure is a sectional view showing still another embodiment, FIG. 5 is a sectional view showing the sizes of spacers and contact holes, and FIG. 4 is a sectional view showing the structure of a conventional thin film diode for display devices.
FIG. 6 is a circuit diagram for driving a liquid crystal by connecting thin film diodes for a display device according to the present invention in a ring. 1.11.21... Substrate, 2.12.22... First electrode (ITO), 6.
16.24... Semiconductor layer, 4.14.27...
...Second electrode (aluminum containing silicon), 5.16.29...Contact part, 6.17.
60...Active part. Figure 1 (A) (B) 67 Kutaib rhyme 3, w nose w 2 1st e! (ITO) Figure 2 Figure 3 Figure 4 Figure 6 bJ Game 4
Claims (2)
形成する薄膜ダイオードリングに於いて、該薄膜ダイオ
ードは、透明電極（ＩＴＯ或は、ＳｎＯ＿２）から成る
第１電極と、該第１電極の上にＰＩＮ又はＮＩＰ接合を
有する半導体層と、該半導体層上に形成したシリコンを
含むアルミニウム（Ａｌ：Ｓｉ）から成る第２電極から
形成されたことを特徴とする表示装置用薄膜ダイオード
。(1) In a thin film diode ring formed at the intersection of pixels of an active matrix display device, the thin film diode has a first electrode made of a transparent electrode (ITO or SnO_2), and a ring formed on the first electrode. 1. A thin film diode for a display device, comprising a semiconductor layer having a PIN or NIP junction, and a second electrode formed on the semiconductor layer and made of aluminum containing silicon (Al:Si).
残渣がある事を特徴とする特許請求の範囲第１項記載の
表示装置用薄膜ダイオード。(2) The thin film diode for a display device according to claim 1, wherein the first electrode has etching residue of the upper electrode (Al:Si).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61016027A JPS62173435A (en) | 1986-01-28 | 1986-01-28 | Thin film diode for display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61016027A JPS62173435A (en) | 1986-01-28 | 1986-01-28 | Thin film diode for display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62173435A true JPS62173435A (en) | 1987-07-30 |
Family
ID=11905081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61016027A Pending JPS62173435A (en) | 1986-01-28 | 1986-01-28 | Thin film diode for display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62173435A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62231982A (en) * | 1986-04-02 | 1987-10-12 | セイコーエプソン株式会社 | Semiconductor device |
| JPH01178928A (en) * | 1987-12-29 | 1989-07-17 | Fuji Electric Co Ltd | Driving element for display of active matrix display panel |
| US5301048A (en) * | 1990-02-07 | 1994-04-05 | U.S. Philips Corporation | Active matrix display device with Schottky contact switching elements |
-
1986
- 1986-01-28 JP JP61016027A patent/JPS62173435A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62231982A (en) * | 1986-04-02 | 1987-10-12 | セイコーエプソン株式会社 | Semiconductor device |
| JPH01178928A (en) * | 1987-12-29 | 1989-07-17 | Fuji Electric Co Ltd | Driving element for display of active matrix display panel |
| US5301048A (en) * | 1990-02-07 | 1994-04-05 | U.S. Philips Corporation | Active matrix display device with Schottky contact switching elements |
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