JPS62167888A - Photochemical vapor growth device - Google Patents
Photochemical vapor growth deviceInfo
- Publication number
- JPS62167888A JPS62167888A JP1040786A JP1040786A JPS62167888A JP S62167888 A JPS62167888 A JP S62167888A JP 1040786 A JP1040786 A JP 1040786A JP 1040786 A JP1040786 A JP 1040786A JP S62167888 A JPS62167888 A JP S62167888A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- film
- forming part
- forming section
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005192 partition Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 35
- 238000007740 vapor deposition Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000012495 reaction gas Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光化学気相成長装置に関し、籍に紫外光を照射
することによって反応ガスを励起し化学反応を促進させ
膜を成長妊せる光化学気相成長装置に関するものである
◎
〔従来の孜術〕
半導体装置製造プロセスの低温化のために、光化学気相
成長法は必須の半纏体ｉｔ製造技術としである。この光
化学気相成長法として、低圧水銀灯から発光される２５
３．７ｎｍの紫外光を水銀蒸気を含む反応ガスに照射し
、先づ水銀原子？励起し、矢に励起水銀原子によって反
応ガス金励起し膜形成を行なう方法、あるいは同じく低
圧水銀灯から発光される１８４．９ｎｍの光によって直
接的に反応ガス分子【励起し膜形成を行なう方法が通常
とられている。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a photochemical vapor deposition apparatus, which excites a reactive gas by irradiating it with ultraviolet light to promote chemical reaction and grow a film. ◎ [Conventional technology] Photochemical vapor deposition is an indispensable semi-integrated IT manufacturing technology in order to reduce the temperature of semiconductor device manufacturing processes. As this photochemical vapor deposition method, 25
A reaction gas containing mercury vapor is irradiated with 3.7 nm ultraviolet light, and mercury atoms are first detected. The usual method is to excite the reactive gas molecules using excited mercury atoms to form a film, or to directly excite the reactive gas molecules using 184.9 nm light emitted from a low-pressure mercury lamp. It is taken.
一般に光化学気相成長装置では、光源部と膜形成の行わ
れる膜形成部との間は、光源から発光させられる光を透
過する光透過窓によって仕切られている。この光透過窓
を透過した光によって、材料ガスは膜形成すべき基板上
のみならず光透過窓上においても化学反応ｔおこし、光
透過窓上にも膜生成が生じる。その結果、光透過窓上に
成長した膜が厚くなるに従い、光透窓を通し膜形成部へ
照射される紫外光量が減少し、逐には全く遮断され膜成
長しなくなるという問題が起こる。Generally, in a photochemical vapor deposition apparatus, a light source section and a film forming section where film formation is performed are separated by a light transmission window that transmits light emitted from the light source. The light transmitted through the light transmission window causes a chemical reaction in the material gas not only on the substrate on which the film is to be formed but also on the light transmission window, and a film is formed also on the light transmission window. As a result, as the film grown on the light-transmitting window becomes thicker, the amount of ultraviolet light irradiated through the light-transmitting window to the film-forming area decreases, and eventually is completely blocked, causing a problem that the film does not grow.
上記の問題を解消する従来の技術の１つとして、光透過
窓を用いずプラズマ発光ｔ−２こす光源部と膜形成部と
を一体化して同一チェ／バーに収めた装置がある。（例
えば、垂井他、イクステンデッド・アブストラクト・オ
ブ・１６ｔｈ・コンファレンス・オノ・ソリッド・ステ
イト、デバイセス・アンド＝”ｆテリアルズ。Ｅｘｔｅ
ｎｄｅｅｌ Ａｂｓｔｖ−ａｃｔ ｏｆ １６ｔ
ｈ Ｃｏｎ１’ｅｒｅｎｃｅ ｏｎ ５ｏｌｉｄ
８ｔａｔｅ Ｄｅｖｉｃｅｓ ａｎｄ Ｍａｔｅｙ
ｉａｌｓ）ｐｐ・６６３−６６６（１９８４））。One of the conventional techniques for solving the above problem is a device in which a light source section for plasma emission t-2 and a film forming section are integrated and housed in the same chamber without using a light transmission window. (For example, Tarui et al., Extended Abstracts of the 16th Conference on Solid State, Devices & = “fterials. Exte.
ndiel Abstv-act of 16t
hCon1'erence on 5olid
8tate Devices and Matey
ials) pp. 663-666 (1984)).
しかしながら、上述した従来の光源部と膜形成部とを一
体化した光化学気相成長装置は、光源部で形成されるプ
ラズマが膜形成領域にまで影響を及ぼすため、膜形成領
域に置かれた基板、あるいは形成膜自体に光源部のプラ
ズマによるプラズマ損傷が与えられ、基板が劣化した！
ｌ１％あるいは、特性の良い膜が形成できないという欠
点がある。However, in the above-mentioned conventional photochemical vapor deposition apparatus that integrates a light source section and a film forming section, the plasma formed in the light source section even affects the film forming region. Or, the formed film itself was damaged by plasma from the light source, causing the substrate to deteriorate!
There is a drawback that a film with good characteristics cannot be formed.
さらに、材料ガスが光源部へ拡散し、プラズマ発光量が
減少するとか、おるいは不安定になるという欠点がある
。Furthermore, there is a drawback that the material gas diffuses into the light source, reducing the amount of plasma light emission or making it unstable.
本発明の目的は、光源部と膜形成部と？一体化し、同一
チェ／バーに収めた光化学気相成長装置においても、プ
ラズマ損傷がなく、安定なプラズマ発光を行う光化学気
相成長装置を提供することである。The purpose of the present invention is to provide a light source section and a film forming section? It is an object of the present invention to provide a photochemical vapor deposition apparatus which is free from plasma damage and emits stable plasma light even when the apparatus is integrated and housed in the same chamber/bar.
本発明の光化学気相成長装置は、紫外元金発生するプラ
ズマ形成部と、プラズマ形成部から照射される紫外光に
よって材料ガス金励起し基板に膜上形成する膜形成部と
から構成された光化学気相成長ｔｊｔｆにおいて、プラ
ズマ形成部のプラズマを封じ込める磁場発生装置と、プ
ラズマ形成部から膜形成部へのガス流を形成する装置構
造とを有している。The photochemical vapor deposition apparatus of the present invention includes a plasma forming section that generates an ultraviolet element, and a film forming section that excites material gas gold by ultraviolet light irradiated from the plasma forming section and forms a film on a substrate. In vapor phase growth tjtf, it has a magnetic field generating device that confines plasma in a plasma forming section, and a device structure that forms a gas flow from the plasma forming section to the film forming section.
本発明の好ましい実施態様の光化学気相成長装置は、上
記ガス流を形成する装置構造が、プラズマ形底部上万に
設置されたプラズマ放電ガス導入口と、プラズマ形成部
下方位置にある膜形成部に設置された反応ガス導入口と
、膜形成部下方位置に設置ｇれたガス排気口と、プラズ
マ形成部と膜形成部との間に設置されたしきシ版とで構
成されていることを特徴としている。In the photochemical vapor deposition apparatus according to a preferred embodiment of the present invention, the apparatus structure for forming the gas flow includes a plasma discharge gas inlet installed at the bottom of the plasma shape, and a film forming part located below the plasma formation. It consists of a reaction gas inlet installed at the bottom, a gas exhaust port installed below the film formation part, and a cutter installed between the plasma formation part and the film formation part. It is a feature.
矢に、本発明について図面を参照して説明する。 The present invention will now be described with reference to the drawings.
第１図は本発明の一実施例の断面図でおる。光化学気相
成長装置１０１は、プラズマ形成部１０２と膜形成部１
０３とからなる。プラズマは２枚の電極１０４および１
０５によって形成部れる。このプラズマ形成部のプラズ
マは２個の円環コイル１０６が作るミラー磁場によシ閉
じ込められる。FIG. 1 is a sectional view of one embodiment of the present invention. The photochemical vapor deposition apparatus 101 includes a plasma forming section 102 and a film forming section 1.
It consists of 03. The plasma is generated by two electrodes 104 and 1
Formed by 05. The plasma in this plasma forming section is confined by the mirror magnetic field created by the two annular coils 106.
プラズマ形成部１０２には放電ガス導入口１０８がちシ
プラズマ形成に必要な気体が導入される。A gas necessary for plasma formation is introduced into the plasma forming section 102 through a discharge gas inlet 108 .
−万、材料ガスは材料が入縛口１１１から導入される。- 10,000, the material gas is introduced from the inlet 111.
ここで、膜形成部１０３に導入された材料ガスのプラズ
マ形成部１０２への逆拡散？低減させるための仕切）板
１１３がプラズマ形成部１０２と膜形成部１０３との間
に設置されてそる。以上の構造をとることにより、放電
ガスはプラズマ形成部１０２から膜形成部１０３への流
れ１１４全形成し、膜形成部１０３ｔ″通過し排気口１
１２から排気される。また材料ガスは材料ガス導入口１
１１から膜形成部１０３に導入され基板１１０上で膜形
成反応を起こした後、排気口１１２から排気される。さ
らに膜形成部１０３にはヒータ１０９がおシ、膜成長を
行なう基板１１０を刀口熱することができる。Here, is the material gas introduced into the film forming section 103 back-diffused into the plasma forming section 102? A partition plate 113 is installed between the plasma forming section 102 and the film forming section 103 to reduce the distortion. By adopting the above structure, the discharge gas completely forms a flow 114 from the plasma forming part 102 to the film forming part 103, passes through the film forming part 103t'', and passes through the exhaust port 1.
It is exhausted from 12. Also, the material gas is in the material gas inlet 1.
After being introduced into the film forming section 103 from 11 and causing a film forming reaction on the substrate 110, it is exhausted from the exhaust port 112. Further, a heater 109 is provided in the film forming section 103, and can heat the substrate 110 on which the film is to be grown.
本発明による光化学気相成長装置を用いて行なったシリ
コン窒化膜成長は以下の条件で行なわれた。放電ガスと
してｆｉ−ｆｔｔ４００ｓｃｃｍのアルゴンガスが材料
ガスとして流量４０ｓｅｃｍのシランガスおよび流量４
００ｓｅｃｍ のアンモニアガスが用いられ、圧力は
５Ｔｏ ｒ ｒに設定された。放電条件としてプラズマ
族［ｉｉｉ力５ｗ、放電周波数１３．５６ＭＨｚが用い
られた。このとき、２個の円環コイル１０６によりプラ
ズマ形成部中央面に０．５キロガウス、両端のコイル部
に１キロガウスのミラー磁場を作シ、プラズマ封じ込め
を行った。成長時間に対する膜厚の変化を第２図に示す
。ガス流が形成され、膜形成部からプラズマ形成部への
材料ガスの逆拡散が抑制されるため、放電ガスに材料ガ
スが混入することによるプラズマ発光強度の変化が無く
、第２図に示す様に膜成長速度は長時間にわ７１ｃｂ一
定の値をとる。Silicon nitride film growth was performed using the photochemical vapor deposition apparatus according to the present invention under the following conditions. Argon gas at a fi-ftt of 400 sccm was used as a discharge gas, silane gas at a flow rate of 40 seconds and a flow rate of 4 were used as material gases.
00 sec of ammonia gas was used and the pressure was set at 5 Torr. As the discharge conditions, a plasma group III power of 5 W and a discharge frequency of 13.56 MHz were used. At this time, a mirror magnetic field of 0.5 kilogauss was created in the central plane of the plasma forming part by the two annular coils 106, and a mirror magnetic field of 1 kilogauss was created in the coil parts at both ends, thereby confining the plasma. Figure 2 shows the change in film thickness with respect to growth time. A gas flow is formed and back diffusion of the material gas from the film forming part to the plasma forming part is suppressed, so there is no change in the plasma emission intensity due to mixing of the material gas into the discharge gas, as shown in Figure 2. The film growth rate remains constant for a long time.
次に形成された膜の特性について、光透過窓を用いずプ
ラズマ発光をおこす光源部と膜形成部とを一体化して同
一チェ／バーに収めた従来の装置で形成したシリコン窒
化膜と比較して説明する。Next, we compared the characteristics of the formed film with a silicon nitride film formed using a conventional device in which the light source section that generates plasma light emission and the film formation section are integrated and housed in the same chamber without using a light transmission window. I will explain.
本発明の装置で形成したシリコン窒化膜の化学的特性は
、従来の装置で形成したシリコン窒化膜と同様でるる。The chemical properties of the silicon nitride film formed with the apparatus of the present invention are similar to those of the silicon nitride film formed with the conventional apparatus.
しかし、電気的特性は本発明の装置で形成したシリコン
窒化膜の万が優れている。例えば、リーク電流は本発明
の装置で形成したシリコン窒化膜の刀が従来の襞はで形
成したシリコン窒化膜に比べ一桁程小さい。これは１本
発明の装置が、ミラー磁場を作ることによって、プラズ
マ形成部１０３においてプラズマ盆封じ込めるため。However, the electrical properties of the silicon nitride film formed by the apparatus of the present invention are far superior. For example, the leakage current of a silicon nitride film formed using the apparatus of the present invention is about an order of magnitude smaller than that of a silicon nitride film formed using a conventional pleat method. This is because the device of the present invention confines the plasma basin in the plasma forming section 103 by creating a mirror magnetic field.
プラズマ中の荷電粒子による基板および膜への損傷がな
く、電気的特性の良好なＭを形成することができるから
である。This is because the substrate and film are not damaged by charged particles in the plasma, and M with good electrical characteristics can be formed.
以上説明したように本発明は、プラズマ形成部と膜形成
部とを一体化した光化学気相成長装置において、プラズ
マ形成部の近傍に磁場を形成することによって、プラズ
マの形成領域を限定し、荷電粒子の運動領域をプラズマ
形成部に限るようにすることによシ、膜形成部におかれ
た基板がプラズマ損傷を受けないようにできる効果があ
る。As explained above, the present invention limits the plasma formation area by forming a magnetic field in the vicinity of the plasma formation part in a photochemical vapor deposition apparatus that integrates a plasma formation part and a film formation part. By limiting the movement area of particles to the plasma forming area, there is an effect that the substrate placed in the film forming area can be prevented from being damaged by the plasma.
また、プラズマ形成部から膜形成部への放電ガス流を形
成することにより、膜形５ｙ、部から１ラズマ形成部へ
のガスの逆拡散を防ぎプラズマの発光を安定させ、一定
の膜成長を行うことが出来る効果がある。In addition, by forming a discharge gas flow from the plasma forming part to the film forming part, back diffusion of gas from the film shape part 5y to the plasma forming part 1 is prevented, stabilizing plasma light emission, and maintaining constant film growth. There are effects that can be done.
第１図は本発明の一実施例の光化学気相成長装置の構造
断面図、第２図は本発明の一実施例の光化学気相成長装
置による膜成長の成長時間と膜厚との関係上水すグラフ
である。
１０１・・・・・・光化学気相成長装置、１０２・・・
・・・プラズマ形成部、１０３・・・・・・膜形成部、
１０４，１０５・・・・・・電極、１０６・・・・・
・円環コイル、１０８・・・・・・放電ガス導入口、１
０９・・・・・・ヒータ、１１０・・・・・・基板、１
１１・・・・・・材料ガス導入口、１１２・・・・・・
排気口、１１３・・・・・・仕切シ板、１１４・・・・
・・ガス流。FIG. 1 is a cross-sectional view of the structure of a photochemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between film growth time and film thickness using a photochemical vapor deposition apparatus according to an embodiment of the present invention. This is a water graph. 101...Photochemical vapor deposition apparatus, 102...
... plasma forming section, 103... film forming section,
104, 105... Electrode, 106...
・Circular coil, 108...Discharge gas inlet, 1
09...Heater, 110...Substrate, 1
11... Material gas inlet, 112...
Exhaust port, 113... Partition plate, 114...
...Gas flow.
Claims (2)
形成部から照射される紫外光によって材料ガスを励起し
基板に膜を形成する膜形成部とから構成された光化学気
相成長装置において、該プラズマ形成部のプラズマを封
じ込める磁場発生装置と、該プラズマ形成部から該膜形
成部へのガス流を形成する装置構造とを有することを特
徴とする光化学気相成長装置。(1) In a photochemical vapor deposition apparatus comprising a plasma forming section that generates ultraviolet light, and a film forming section that excites a material gas with the ultraviolet light irradiated from the plasma forming section and forms a film on a substrate, A photochemical vapor deposition apparatus comprising: a magnetic field generating device that confines plasma in the plasma forming section; and an apparatus structure that forms a gas flow from the plasma forming section to the film forming section.
上方に設置されたプラズマ放電ガス導入口と、プラズマ
形成部下方位置にある膜形成部に設置された反応ガス導
入口と、膜形成部下方位置に設置されたガス排気口と、
プラズマ形成部と膜形成部との間に設置されたしきり板
とで構成されていることを特徴とする特許請求の範囲第
（１）項記載の光化学気相成長装置。(2) The device structure for forming the gas flow includes a plasma discharge gas introduction port installed above the plasma formation section, a reaction gas introduction port installed in the film formation section located below the plasma formation, and a reaction gas introduction port installed below the film formation section. A gas exhaust port installed in the opposite direction,
The photochemical vapor deposition apparatus according to claim 1, characterized in that the apparatus comprises a partition plate installed between the plasma forming section and the film forming section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1040786A JPS62167888A (en) | 1986-01-20 | 1986-01-20 | Photochemical vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1040786A JPS62167888A (en) | 1986-01-20 | 1986-01-20 | Photochemical vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62167888A true JPS62167888A (en) | 1987-07-24 |
Family
ID=11749284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1040786A Pending JPS62167888A (en) | 1986-01-20 | 1986-01-20 | Photochemical vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62167888A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010069715A (en) * | 2001-04-30 | 2001-07-25 | 조육형 | In-situ suface functionalization treater of plastic film |
| JP2015535889A (en) * | 2012-09-26 | 2015-12-17 | ビーエムシー カンパニー リミテッド | Plasma chemical vapor deposition equipment |
-
1986
- 1986-01-20 JP JP1040786A patent/JPS62167888A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010069715A (en) * | 2001-04-30 | 2001-07-25 | 조육형 | In-situ suface functionalization treater of plastic film |
| JP2015535889A (en) * | 2012-09-26 | 2015-12-17 | ビーエムシー カンパニー リミテッド | Plasma chemical vapor deposition equipment |
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