JPH10261620A - Surface treater - Google Patents

Surface treater

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Publication number
JPH10261620A
JPH10261620A JP6609497A JP6609497A JPH10261620A JP H10261620 A JPH10261620 A JP H10261620A JP 6609497 A JP6609497 A JP 6609497A JP 6609497 A JP6609497 A JP 6609497A JP H10261620 A JPH10261620 A JP H10261620A
Authority
JP
Japan
Prior art keywords
gas
surface treatment
power supply
halogen
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6609497A
Other languages
Japanese (ja)
Inventor
Tetsuo Ono
哲郎 小野
Hiroshi Miyazaki
博史 宮崎
Yutaka Omoto
大本　　豊
Kouichi Nakaushiyou
功一 中宇称
Tatsumi Mizutani
巽 水谷
Yasushi Goto
康 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6609497A priority Critical patent/JPH10261620A/en
Publication of JPH10261620A publication Critical patent/JPH10261620A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To secure high selection ratio as to semiconductor such as Si and the etching rate of oxide film, etc., by intermittently controlling the bias power supply impressed on a specimen, while mixing a halogen gas which accelerates the etching rate with a depositing gas. SOLUTION: Microwaves are led into a vacuum container 14 from a microwave power supply 11 through the intermediary of a waveguide 12 and a leading-in window 13. A gas is led into the vacuum container 14 from a gas leading-in pipe 110. The magnetic field intensity in an electromagnet 15 is set up to start the resonance with the frequency of the microwaves. In order to accelerate the ions which entered a specimen 17 mounted on a specimen base 18, a bias power supply 19 is connected to the specimen base 18. A Figure (b) displays a voltage waveform 111 of the bias power supply 19. The voltage is turned on-off at a appropriate intervals. In order to etch away a polycrystalline Si on the oxide film of a semiconductor device by this surface processor, a mixed gas of C12 and oxygen as a depositing gas is used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子の表面処
理装置にかかわり、特にプラズマを用いて半導体表面の
エッチングや成膜を行なう表面処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus for a semiconductor device, and more particularly to a surface treatment apparatus for etching or forming a film on a semiconductor surface using plasma.

【０００２】[0002]

【従来の技術】半導体素子のエッチングや成膜に現在広
く用いられている装置は、プラズマを利用する装置であ
る。本発明はこのようなプラズマを利用した装置に広く
応用できるものであるが、ここではそのうちの一つであ
るECR(電子サイクロトロン共鳴)方式と呼ばれている装
置を例に取り従来技術を説明する。この方式では、外部
より磁場を印加した真空容器中でマイクロ波によりプラ
ズマを発生させる。磁場により電子はサイクロトロン運
動をし、この周波数とマイクロ波の周波数を共鳴させる
ことで効率良くプラズマを発生できる。また磁場により
プラズマの壁への拡散が抑えられ、高密度のプラズマが
発生できる。試料に入射するイオンを加速するために試
料にはバイアス電圧が印加される。プラズマとなるガス
には例えばエッチングを行なう場合には塩素やフッ素な
どのハロゲンガスが用いられる。エッチングのほかに膜
の堆積などにもこの装置は使われている。2. Description of the Related Art An apparatus widely used at present for etching and film formation of a semiconductor element is an apparatus utilizing plasma. The present invention can be widely applied to an apparatus using such a plasma, but here, the prior art will be described by taking an example of an apparatus called an ECR (Electron Cyclotron Resonance) method as one of them. . In this method, plasma is generated by microwaves in a vacuum vessel to which a magnetic field is externally applied. Electrons perform cyclotron motion due to the magnetic field, and plasma can be efficiently generated by resonating this frequency with the frequency of the microwave. Further, the diffusion of the plasma to the wall is suppressed by the magnetic field, and high-density plasma can be generated. A bias voltage is applied to the sample to accelerate ions incident on the sample. For example, when etching is performed, a halogen gas such as chlorine or fluorine is used as the plasma gas. This equipment is used not only for etching but also for depositing films.

【０００３】この装置の主に高精度化をはかる目的で特
開平6-151360が知られている。この発明では、試料に印
加するバイアス電圧をオンーオフと間欠的に制御するこ
とにより、エッチングしたい物質であるSiと下地酸化膜
との選択比を高くする。[0003] Japanese Patent Application Laid-Open No. 6-151360 is known mainly for the purpose of improving the accuracy of this apparatus. In the present invention, the selectivity between Si, which is the substance to be etched, and the base oxide film is increased by intermittently controlling the bias voltage applied to the sample between on and off.

【０００４】[0004]

【発明が解決しようとする課題】近年の半導体素子で
は、その微細化に伴い加工の高精度化がこれまで以上に
要求されている。具体的には、MOS(metal oxide semico
nductor)トランジスタのゲート酸化膜の厚さは256M以降
のメモリ素子では約4nmになると予想されている。この
ような薄いゲート酸化膜を有する素子の加工にはこれま
で以上の高い選択比が要求されて、新しい技術が不可欠
となる。In recent years, semiconductor devices have been required to have higher processing accuracy as they have been miniaturized. Specifically, MOS (metal oxide semico
The thickness of the gate oxide film of the nductor transistor is expected to be about 4 nm for memory devices of 256M and below. Processing of an element having such a thin gate oxide film requires a higher selectivity than ever, and new technology is indispensable.

【０００５】本発明の目的はこの新たな課題を解決し
て、Siなどの半導体と酸化膜などの絶縁物とのエッチン
グ速度について高い選択比を得る表面処理装置を提供す
ることである。An object of the present invention is to solve this new problem and to provide a surface treatment apparatus which can obtain a high selectivity with respect to an etching rate between a semiconductor such as Si and an insulator such as an oxide film.

【０００６】[0006]

【課題を解決するための手段】本発明によれば、上記目
的は、試料に印加するバイアス電源の出力を間欠的に制
御して、かつエッチングガスとして塩素などのエッチン
グを進行させるハロゲンガスと堆積性のあるガスを混合
させることにより、達成する。According to the present invention, an object of the present invention is to intermittently control the output of a bias power supply applied to a sample, and to deposit a halogen gas for promoting etching such as chlorine as an etching gas. This is achieved by mixing toxic gases.

【０００７】[0007]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

（実施例１）以下実施例を図１により説明する。図１
(a)はプラズマエッチング装置の全体構成図である。マ
イクロ波電源１１から導波管１２と導入窓１３を介して
真空容器１４内にマイクロ波が導入される。真空容器１
４の材質は金属で内面に絶縁コーティングしてある。導
入窓１３の材質は石英、セラミックなど電磁波を透過す
る物質である。真空容器１４中にはガス導入管１１０か
らガスが導入される。電磁石１５の磁場強度はマイクロ
波の周波数と共鳴を起こすように設定されて、たとえば
周波数が2.45GHzならば磁場強度は875Gaussである。こ
の磁場強度でプラズマ１６中の電子のサイクロトロン運
動が電磁波の周波数と共鳴するために、効率よく電磁波
のエネルギーがプラズマに供給され高密度のプラズマが
できる。試料１７は試料台１８の上に設置される。試料
に入射するイオンを加速するために、バイアス電源１９
が試料台１８に接続されている。バイアス電源の周波数
に特に制限はないが、通常バイアス電源の周波数は２０
０kHzから２０ＭHzの範囲が実用的である。図１(b)はバ
イアス電源１９の電圧波形１１１を示す。本発明に従
い，電圧はある適当な間隔でオンオフされる。(Embodiment 1) An embodiment will be described below with reference to FIG. FIG.
(a) is an overall configuration diagram of a plasma etching apparatus. Microwaves are introduced from a microwave power supply 11 into a vacuum vessel 14 through a waveguide 12 and an introduction window 13. Vacuum container 1
The material of No. 4 is metal and the inner surface is insulated and coated. The material of the introduction window 13 is a material that transmits electromagnetic waves, such as quartz or ceramic. Gas is introduced into the vacuum vessel 14 from a gas introduction pipe 110. The magnetic field strength of the electromagnet 15 is set to resonate with the frequency of the microwave. For example, if the frequency is 2.45 GHz, the magnetic field strength is 875 Gauss. Since the cyclotron motion of the electrons in the plasma 16 resonates with the frequency of the electromagnetic wave at this magnetic field intensity, the energy of the electromagnetic wave is efficiently supplied to the plasma, and a high-density plasma is generated. The sample 17 is placed on a sample stage 18. A bias power supply 19 is used to accelerate ions incident on the sample.
Are connected to the sample table 18. There is no particular limitation on the frequency of the bias power supply.
A range from 0 kHz to 20 MHz is practical. FIG. 1B shows a voltage waveform 111 of the bias power supply 19. According to the invention, the voltage is turned on and off at some suitable interval.

【０００８】この装置で半導体素子のゲートに多く用い
られる酸化膜上の多結晶Si(poly Si)をエッチングした
結果を次に述べる。エッチングのガスにはCl2と堆積性
のガスとして酸素の混合ガスを用いた。真空容器１４内
部の圧力を0.8Paとした。マイクロ波電源１１の出力を
４００Wとした。バイアス電源１０の出力は６０Wで，周
波数は８００KHzとした。オンオフの繰り返し周波数は1
KHzとした。図２はガスとして塩素１８０ｃｃと酸素２
０ｃｃ混合ガスを用い試料をエッチングした場合のpoly
Siエッチ速度（横軸）と酸化膜に対する選択比（縦
軸）の関係を示している。図２中の折れ線２１は、バイ
アス電源を図１(b)に示すように間欠的に制御して、そ
のオンオフの１周期にしめるオンの割合（以後duty比と
呼ぶ）を変化させた場合のデータである。ここでは、du
ty比１００％の時の電力を６０Ｗ一定として、duty比を
小さくした場合はそれに比例して電力が小さくなるよう
に設定してある。つまりduty比が５０％の場合は電力は
６０Ｗの５０％で３０Ｗになる。図中に各点のduty比を
示す。図２中の折れ線２２はバイアス電源を間欠制御せ
ず、連続波形のままその波高値をかえて、電力を６０Ｗ
から２０Ｗまで変えた場合のデータである。図中に各点
の電力を示す。The result of etching polycrystalline Si (poly Si) on an oxide film often used for a gate of a semiconductor element by this apparatus will be described below. A mixed gas of Cl2 and oxygen as a deposition gas was used as an etching gas. The pressure inside the vacuum vessel 14 was set to 0.8 Pa. The output of the microwave power supply 11 was 400 W. The output of the bias power supply 10 was 60 W, and the frequency was 800 KHz. ON / OFF repetition frequency is 1
KHz. FIG. 2 shows 180 cc of chlorine and oxygen 2
Poly when sample is etched using 0cc mixed gas
The relationship between the Si etch rate (horizontal axis) and the selectivity to the oxide film (vertical axis) is shown. A polygonal line 21 in FIG. 2 indicates data obtained when the bias power supply is intermittently controlled as shown in FIG. 1B to change the ON ratio (hereinafter referred to as duty ratio) for one ON / OFF cycle. It is. Here, du
The power is set to be constant at 60 W when the duty ratio is 100%, and the power is reduced in proportion to the duty ratio when the duty ratio is reduced. That is, when the duty ratio is 50%, the power is 30 W at 50% of 60 W. The duty ratio of each point is shown in the figure. A polygonal line 22 in FIG. 2 indicates that the bias power supply is not intermittently controlled, the peak value is changed as a continuous waveform, and the power is reduced to 60 W.
It is the data when it changed from to 20W. The power at each point is shown in the figure.

【０００９】図２からわかるように、ガス系に塩素と酸
素の混合ガスを用いバイアス電源を間欠的に印加するこ
とによりそのduty比５０％以下の領域では、連続的なバ
イアスと比較しておなじpoly Siエッチ速度にて選択比
が上昇することがわかる。図３は図２の条件からガス種
だけを変えたデータであり、ガスは塩素単体を用いてい
る。この場合は塩素酸素の混合ガスと比較して選択比の
絶対値が小さいことに加えて、バイアス電圧を間欠的に
制御した場合の効果も小さいことがわかる。図２におい
てduty比をさらに下げると選択比はさらに上昇するduty
比５％未満ではpoly Siのエッチ速度が極端に落ちるた
めに実用的なduty比の範囲は５から５０％である。As can be seen from FIG. 2, when a bias power supply is intermittently applied to a gas system using a mixed gas of chlorine and oxygen, the region where the duty ratio is 50% or less is compared with a continuous bias. It can be seen that the selectivity increases with the poly Si etch rate. FIG. 3 shows data obtained by changing only the gas type from the conditions of FIG. 2, and the gas uses chlorine alone. In this case, it can be seen that the effect of controlling the bias voltage intermittently is small, in addition to the fact that the absolute value of the selectivity is small as compared with the mixed gas of chlorine and oxygen. In FIG. 2, when the duty ratio is further reduced, the selection ratio further increases.
If the ratio is less than 5%, the range of the practical duty ratio is 5 to 50% because the etching speed of poly Si is extremely reduced.

【００１０】次に、バイアス電圧の間欠にかかわらず堆
積性を有するガスを混合した場合に間欠制御の効果が上
がる理由を考察する。塩素はpoly Siのエッチングを進
行させるガスで、一方酸素などの堆積性のガスはエッチ
ングを阻害する。特に酸化膜などのエッチ速度が小さい
物質すなわち塩素との反応速度が小さい物質では、少し
でも堆積物があると塩素との反応よりも堆積の方が勝る
のでエッチ速度は極端に落ち、poly Siの対酸化膜選択
比が上昇する。バイアスが印加されていると加速された
イオンが試料表面に入射してエッチング反応を促進す
る。バイアスが連続的だと堆積物が付着すると同時に常
に加速イオンも試料に入射しているので堆積物がスパッ
タされてエッチングを阻害する効果が低くなる。一方、
バイアス電圧を間欠的に印加するとバイアスオフの期間
ではイオンは加速されず、従って堆積物の付着が効率的
に生じて選択比を高める効果が顕著になる。あまりオフ
期間が長くなると酸化膜のみならずpoly Siのエッチン
グも阻害されて実用的ではなくなるので、加速されたイ
オンの入射期間すなわちduty比に最適値が存在する。従
来例では堆積ガスの効果は述べられていない。また先の
考察自体も従来にない考え方で、従ってこの発明は従来
例からは容易類推は不可能であり、我々の実験により初
めて見いだされたものである。Next, the reason why the effect of the intermittent control is improved when a gas having a deposition property is mixed regardless of the intermittent bias voltage will be considered. Chlorine is a gas that advances the etching of poly Si, while deposition gases such as oxygen inhibit the etching. In particular, in the case of a substance with a low etch rate, such as an oxide film, that is, a substance with a low reaction rate with chlorine, if there is even a small amount of deposit, the deposition rate is higher than the reaction with chlorine. The oxide film selectivity increases. When a bias is applied, accelerated ions are incident on the sample surface to accelerate the etching reaction. When the bias is continuous, the deposited ions are always incident on the sample at the same time as the deposited particles are adhered, so that the deposited materials are sputtered and the effect of inhibiting the etching is reduced. on the other hand,
When the bias voltage is intermittently applied, ions are not accelerated during the bias-off period, so that deposits are efficiently attached and the effect of increasing the selectivity becomes remarkable. If the off-period is too long, etching of not only the oxide film but also poly Si is hindered and becomes impractical. Therefore, there is an optimum value for the incident period of the accelerated ions, that is, the duty ratio. In the conventional example, the effect of the deposition gas is not described. In addition, the above discussion itself is a new idea, and therefore, the present invention cannot be easily analogized from the conventional example, and has been found for the first time by our experiments.

【００１１】（実施例２）図４は本発明を適用する別の
装置構造で、この装置では数百kHzから数十MHzのいわい
るラジオ波帯（以後rfと呼ぶ）の周波数で誘導結合によ
りプラズマを発生させる。真空容器４３はアルミナや石
英などの電磁波を透過する物質でつくられている。その
回りに、プラズマ４１０を発生させるための電磁コイル
４２が巻いてある。コイルにはrf電源４４が接続されて
いる。真空容器４１内には試料台４８がありその上に試
料４７がおかれ、試料台にはバイアス電源４９が接続さ
れている。真空容器４１には上蓋４５がついているがこ
れは一体型でもかまわない。(Embodiment 2) FIG. 4 shows another apparatus structure to which the present invention is applied. In this apparatus, inductive coupling is performed at a frequency in a radio wave band (hereinafter referred to as rf) of several hundred kHz to several tens MHz. Generates plasma. The vacuum container 43 is made of a material that transmits electromagnetic waves, such as alumina and quartz. An electromagnetic coil 42 for generating plasma 410 is wound therearound. An rf power supply 44 is connected to the coil. A sample table 48 is provided in the vacuum vessel 41, and a sample 47 is placed thereon. A bias power supply 49 is connected to the sample table. The vacuum container 41 has an upper lid 45, but this may be an integral type.

【００１２】本発明に従い、バイアス電源４９は間欠的
に制御して、エッチングガスには塩素と堆積性のガスと
して窒素の混合ガスを用いた。窒素も半導体表面を窒化
することでエッチングを阻害し、酸素と同様な働きをす
る。エッチングはrf電源４４の周波数を2MHzとしてバイ
アス電源４９の周波数を13.56MHzとしたガスは塩素150c
cと窒素50ccを混合し圧力は0.8Paとした。この実施例で
も図２と図３に示すデータと同じ傾向が得られ、本発明
の有用性がわかった。According to the present invention, the bias power supply 49 is intermittently controlled, and a mixed gas of chlorine and nitrogen as a deposition gas is used as an etching gas. Nitrogen also inhibits etching by nitriding the semiconductor surface, and acts similarly to oxygen. For etching, the frequency of the rf power supply 44 was set to 2 MHz, and the frequency of the bias power supply 49 was set to 13.56 MHz.
c and 50 cc of nitrogen were mixed, and the pressure was set to 0.8 Pa. Also in this example, the same tendency as the data shown in FIGS. 2 and 3 was obtained, indicating the usefulness of the present invention.

【００１３】図４に示す装置では、電磁コイル４２は上
蓋４５の上に設置されていても効果は同じである。In the device shown in FIG. 4, the effect is the same even if the electromagnetic coil 42 is installed on the upper lid 45.

【００１４】（実施例３）図５は本発明を適用する別の
装置構造で、この装置ではrf周波数の容量結合によりプ
ラズマを発生させる。真空容器５１内には２枚の電極５
２、５５が平行に配置してある。電極にはそれぞれrf電
源５３とバイアス電源５６が接続してある。試料５４は
試料台をかねる電極５５の上におかれる。ガスは試料と
対向した電極５２に開いた穴から導入管５８を通して容
器内に入れられる。プラズマ５７は２枚の電極の間で発
生する。Embodiment 3 FIG. 5 shows another apparatus structure to which the present invention is applied. In this apparatus, plasma is generated by capacitive coupling of an rf frequency. In the vacuum vessel 51, two electrodes 5 are provided.
2, 55 are arranged in parallel. An rf power supply 53 and a bias power supply 56 are connected to the electrodes, respectively. The sample 54 is placed on an electrode 55 serving also as a sample stage. The gas is introduced into the container through the introduction tube 58 through a hole opened in the electrode 52 facing the sample. Plasma 57 is generated between the two electrodes.

【００１５】このタイプの装置でもバイアス電源５６を
間欠的に制御してガスとして塩素と堆積性のガスを混合
することにより、先の実施例と同じ効果が得られる。In this type of apparatus, the same effect as in the previous embodiment can be obtained by intermittently controlling the bias power supply 56 and mixing chlorine and a deposition gas as gas.

【００１６】堆積性のガスとしては先に述べた酸素と窒
素に加えて、CO,CO2,NH3などの酸素と窒素を含むガスで
も同様な効果がある。またそれ以外にCH3,CH2F2などの
炭素を含むガスを堆積性が強く同様な効果を発揮する。Similar effects can be obtained by using a gas containing oxygen and nitrogen such as CO, CO2 and NH3 in addition to the above-mentioned oxygen and nitrogen as the deposition gas. In addition, a gas containing carbon, such as CH3 and CH2F2, has a strong deposition property and exhibits the same effect.

【００１７】また、エッチングを促進するハロゲンガス
は塩素のほかにF2,HBr,HIあるいは塩素を含むこれらの
ハロゲンガスの混合でも効果は同じである。またこれら
堆積性ガスの混合率は0.5から50%が適当な範囲である、
すなわち混合率が小さすぎると効果がなくなり、多すぎ
るとエッチングが進行しなくなる。The same effect can be obtained by mixing these halogen gases containing F2, HBr, HI or chlorine in addition to chlorine. Also, the mixing ratio of these deposition gases is 0.5 to 50% is an appropriate range.
That is, if the mixing ratio is too small, the effect is lost, and if it is too large, the etching does not proceed.

【００１８】さらに以上述べたガス系に濃度やプラズマ
安定性を変える目的でAr,Heなどの希ガスを混合しても
本発明の効果を損なうものではない。Further, even if a rare gas such as Ar or He is mixed with the gas system described above for the purpose of changing the concentration or the plasma stability, the effect of the present invention is not impaired.

【００１９】[0019]

【発明の効果】以上のように本発明により、poly Siな
どの半導体を酸化膜などの絶縁物に対して高い選択比で
エッチングできる。As described above, according to the present invention, a semiconductor such as poly Si can be etched with a high selectivity to an insulator such as an oxide film.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明を適用する装置の全体構成図。FIG. 1 is an overall configuration diagram of an apparatus to which the present invention is applied.

【図２】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。FIG. 2 is a diagram showing the relationship between the etch rate of poly Si and the selectivity to oxide film.

【図３】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。FIG. 3 is a diagram showing a relationship between an etch rate of poly Si and an oxide film selectivity.

【図４】本発明を適用する装置の全体構成を示す図。FIG. 4 is a diagram showing an overall configuration of an apparatus to which the present invention is applied.

【図５】本発明を適用する装置の全体構成を示す図。FIG. 5 is a diagram showing an overall configuration of an apparatus to which the present invention is applied.

【符号の説明】[Explanation of symbols]

11…マイクロ波電源、12…導波管、13…導入窓、14,43,
51…真空容器、15…磁石、16,410,57…プラズマ、17,4
7,54…試料、18,48…試料台、19,49,56…バイアス電
源、110,58-ガス導入管、111…電圧波形、21,22,31,32
…折れ線、42…電磁コイル、44,53…ｒｆ電源、45…上
蓋、52,55…電極。11 ... microwave power supply, 12 ... waveguide, 13 ... introduction window, 14, 43,
51… Vacuum container, 15… Magnet, 16,410,57… Plasma, 17,4
7,54 ... sample, 18,48 ... sample stage, 19,49,56 ... bias power supply, 110,58-gas inlet tube, 111 ... voltage waveform, 21,22,31,32
... Bent line, 42 ... Electromagnetic coil, 44,53 ... rf power supply, 45 ... Top cover, 52,55 ... Electrode.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中宇称 功一 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 水谷 巽 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 後藤 康 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所中央研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor, Koichi Nakau, 794, Higashi-Toyoi, Kazamatsu, Kamamatsu, Yamaguchi Prefecture Inside the Kasado Plant, Hitachi, Ltd. Address: Kasado Factory, Hitachi, Ltd.

Claims (11)

【特許請求の範囲】[Claims] 【請求項１】真空容器とその中にプラズマを発生させる
手段および該プラズマにより表面処理される試料を設置
する試料台と試料にバイアスを印加するための電源から
なる表面処理装置において、該真空容器中にハロゲンガ
スと堆積性ガスの混合ガスを導入しかつ、試料台に印加
するバイアスを間欠的にオンとオフに制御したことを特
徴とする表面処理装置。1. A surface treatment apparatus comprising: a vacuum vessel, means for generating plasma therein, a sample stage on which a sample to be surface-treated by the plasma is placed, and a power supply for applying a bias to the sample. A surface treatment apparatus characterized in that a mixed gas of a halogen gas and a deposition gas is introduced therein, and a bias applied to a sample stage is intermittently turned on and off. 【請求項２】請求項１のハロゲンに混合する堆積性カ゛ス
はO2であることを特徴とする表面処理装置。2. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is O2. 【請求項３】請求項１のハロゲンに混合する堆積性カ゛ス
は酸素原子を含むカ゛スであることを特徴とする表面処理
装置。3. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is a gas containing oxygen atoms. 【請求項４】請求項１のハロゲンに混合する堆積性カ゛ス
はN2であることを特徴とする表面処理装置。4. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is N2. 【請求項５】請求項１のハロゲンに混合する堆積性カ゛ス
は窒素原子を含むカ゛スであることを特徴とする表面処理
装置。5. A surface treatment apparatus according to claim 1, wherein said deposition gas mixed with halogen is a gas containing nitrogen atoms. 【請求項６】請求項１のハロゲンに混合する堆積性カ゛ス
は炭素原子を含むカ゛スであることを特徴とする表面処理
装置。6. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is a gas containing carbon atoms. 【請求項７】請求項１から６のいずれかに記載のハロゲ
ンガスは塩素であることを特徴とする表面処理装置。7. A surface treatment apparatus according to claim 1, wherein said halogen gas is chlorine. 【請求項８】請求項１から６のいずれかに記載のハロゲ
ンガスはF2,HBr,HIであることを特徴とする表面処理装
置。8. A surface treating apparatus according to claim 1, wherein the halogen gas is F2, HBr, or HI. 【請求項９】請求項１から８のいずれかの試料に印加す
るバイアス電源の周波数は200KHzから20MHzの高周波で
あることを特徴とする表面処理方法。9. A surface treatment method according to claim 1, wherein the frequency of the bias power supply applied to the sample according to any one of claims 1 to 8 is a high frequency of 200 KHz to 20 MHz. 【請求項１０】請求項１から９のいずれかの試料に印加
するバイアス電源を間欠的にする表面処理する方法は、
バイアスのオン-オフの１周期にしめるオンの割合が５
から５０％にしたことを特徴とする表面処理方法。10. A method for surface treatment for intermittently applying a bias power supply to a sample according to any one of claims 1 to 9,
The ratio of ON to make one cycle of bias ON-OFF is 5
Surface treatment method, characterized in that the surface treatment is reduced to 50%. 【請求項１１】請求項１から１０のいずれかに記載のハ
ロゲンに混合する堆積性カ゛スの混合率は0.5から50%であ
ることを特徴とする表面処理装置。11. A surface treatment apparatus according to claim 1, wherein the mixing ratio of the deposition gas mixed with the halogen according to any one of claims 1 to 10 is 0.5 to 50%.
JP6609497A 1997-03-19 1997-03-19 Surface treater Pending JPH10261620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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