JPS6216599B2 - - Google Patents

Info

Publication number: JPS6216599B2
Authority: JP; Japan
Prior art keywords: region; photoelectric conversion; shift register; vertical; substrate
Prior art date: 1980-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP55130517A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5755672A (en

Inventor

Yasuo Ishihara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-09-19

Filing date

1980-09-19

Publication date

1987-04-13

1980-09-19 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1980-09-19 Priority to JP55130517A priority Critical patent/JPS5755672A/ja

1981-09-21 Priority to EP81107482A priority patent/EP0048480B1/en

1981-09-21 Priority to DE8181107482T priority patent/DE3168333D1/de

1981-09-21 Priority to US06/304,301 priority patent/US4527182A/en

1982-04-02 Publication of JPS5755672A publication Critical patent/JPS5755672A/ja

1987-04-13 Publication of JPS6216599B2 publication Critical patent/JPS6216599B2/ja

Status Granted legal-status Critical Current

Links

238000006243 chemical reaction Methods 0.000 claims description 47
239000000758 substrate Substances 0.000 claims description 33
239000004065 semiconductor Substances 0.000 claims description 25
238000003384 imaging method Methods 0.000 claims description 24
238000000034 method Methods 0.000 claims description 11
239000012535 impurity Substances 0.000 description 12
238000009826 distribution Methods 0.000 description 11
238000010586 diagram Methods 0.000 description 6
238000009792 diffusion process Methods 0.000 description 3
238000000206 photolithography Methods 0.000 description 3
239000002184 metal Substances 0.000 description 2
206010047571 Visual impairment Diseases 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Power Engineering (AREA)
Electromagnetism (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Solid State Image Pick-Up Elements (AREA)
Transforming Light Signals Into Electric Signals (AREA)

JP55130517A 1980-09-19 1980-09-19 Solid-state image pickup device and its driving method Granted JPS5755672A (en)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP55130517A JPS5755672A (en)	1980-09-19	1980-09-19	Solid-state image pickup device and its driving method
EP81107482A EP0048480B1 (en)	1980-09-19	1981-09-21	Semiconductor photoelectric converter
DE8181107482T DE3168333D1 (en)	1980-09-19	1981-09-21	Semiconductor photoelectric converter
US06/304,301 US4527182A (en)	1980-09-19	1981-09-21	Semiconductor photoelectric converter making excessive charges flow vertically

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP55130517A JPS5755672A (en)	1980-09-19	1980-09-19	Solid-state image pickup device and its driving method

Publications (2)

Publication Number	Publication Date
JPS5755672A JPS5755672A (en)	1982-04-02
JPS6216599B2 true JPS6216599B2 (nl)	1987-04-13

Family

ID=15036179

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP55130517A Granted JPS5755672A (en)	1980-09-19	1980-09-19	Solid-state image pickup device and its driving method

Country Status (1)

Country	Link
JP (1)	JPS5755672A (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS589361A (ja) *	1981-07-08	1983-01-19	Hitachi Ltd	固体撮像素子
JPS58187082A (ja) *	1982-04-26	1983-11-01	Matsushita Electric Ind Co Ltd	固体撮像装置の駆動方法
JPS5965470A (ja) *	1982-10-05	1984-04-13	Nec Corp	電荷結合素子の出力構造
JPS607766A (ja) *	1983-06-27	1985-01-16	Sony Corp	固体撮像素子の製法
JPS6020687A (ja) *	1983-07-15	1985-02-01	Nippon Kogaku Kk <Nikon>	電子スチルカメラ
JPS60169165A (ja) *	1984-02-10	1985-09-02	Hitachi Ltd	固体撮像素子
JPH0624239B2 (ja) *	1984-02-15	1994-03-30	ソニー株式会社	縦形オ−バ−フロ−イメ−ジセンサ−
JPH0680812B2 (ja) *	1985-03-29	1994-10-12	松下電子工業株式会社	固体撮像装置
JPS61121580A (ja) *	1984-11-16	1986-06-09	Matsushita Electronics Corp	固体撮像装置
JPS61176150A (ja) *	1985-01-31	1986-08-07	Toshiba Corp	固体撮像装置
JPS61198110U (nl) *	1985-06-03	1986-12-11
JPS61281790A (ja) *	1985-06-07	1986-12-12	Hitachi Ltd	固体撮像装置
JPS62156870A (ja) *	1985-12-28	1987-07-11	Matsushita Electronics Corp	固体撮像装置の製造方法
JPH07120774B2 (ja) *	1986-12-05	1995-12-20	松下電子工業株式会社	固体撮像装置
KR930000914B1 (ko) *	1990-01-29	1993-02-11	금성일렉트론 주식회사	Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5724576A (en) *	1980-07-22	1982-02-09	Toshiba Corp	Solid state image pick up device

1980
- 1980-09-19 JP JP55130517A patent/JPS5755672A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5724576A (en) *	1980-07-22	1982-02-09	Toshiba Corp	Solid state image pick up device

Also Published As

Publication number	Publication date
JPS5755672A (en)	1982-04-02

Publication	Publication Date	Title
KR100262774B1 (ko)	2000-08-01	상부 버스 가상 위상 프레임 행간 전송 ccd 영상 감지기
US4484210A (en)	1984-11-20	Solid-state imaging device having a reduced image lag
US5115458A (en)	1992-05-19	Reducing dark current in charge coupled devices
JPS6216599B2 (nl)	1987-04-13
US5114865A (en)	1992-05-19	Method of manufacturing a solid-state image sensing device having an overflow drain structure
KR100265269B1 (ko)	2000-10-02	수직 오버플로우 드레인 및 저항성 게이트 전하 전송소자를 가지는 고체촬상소자 및 그 제어방법
JP2816824B2 (ja)	1998-10-27	Ｃｃｄ固体撮像素子
JPS6244818B2 (nl)	1987-09-22
JPH02309877A (ja)	1990-12-25	固体撮像装置
JPH0424870B2 (nl)	1992-04-28
JP2641809B2 (ja)	1997-08-20	Ｃｃｄ映像素子
JPH031871B2 (nl)	1991-01-11
JPH0230189B2 (nl)	1990-07-04
KR100311493B1 (ko)	2001-11-17	고체촬상소자및그의제조방법
JPH0421351B2 (nl)	1992-04-09
WO1991003840A1 (en)	1991-03-21	Reducing dark current in charge coupled devices
JPS60244068A (ja)	1985-12-03	埋込みチヤネル電荷結合素子
KR0140634B1 (ko)	1998-06-01	고체촬상소자의 제조방법
JPS60169165A (ja)	1985-09-02	固体撮像素子
JPH0637297A (ja)	1994-02-10	固体撮像装置およびその駆動方法
JPH0697416A (ja)	1994-04-08	固体撮像装置及びその製造方法
JPH05145056A (ja)	1993-06-11	固体撮像素子
JPH03266465A (ja)	1991-11-27	固体撮像装置
JPS6148308B2 (nl)	1986-10-23
JPH08330561A (ja)	1996-12-13	固体撮像装置