JPS6216585A - Superconducting device - Google Patents
Superconducting deviceInfo
- Publication number
- JPS6216585A JPS6216585A JP60155259A JP15525985A JPS6216585A JP S6216585 A JPS6216585 A JP S6216585A JP 60155259 A JP60155259 A JP 60155259A JP 15525985 A JP15525985 A JP 15525985A JP S6216585 A JPS6216585 A JP S6216585A
- Authority
- JP
- Japan
- Prior art keywords
- film
- lower electrode
- window
- thickness
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、超伝導デバイスのコンタクト部において下層
の超伝導体層の厚さを局所的に厚くすることによって、
コンタクト部におけるノーマル転移を防止した。[Detailed Description of the Invention] [Summary] The present invention provides the following advantages:
Normal transition at the contact area was prevented.
本発明は超伝導デバイスに関し、特にそのコンタクト部
の構造に関する。The present invention relates to a superconducting device, and particularly to the structure of a contact portion thereof.
超伝導デバイスにおいて、2つの超伝導体層が絶縁物層
の窓を介して接触するコンタクト部が存在する〇
従来のコンタクト部の構造を第3図に示す〇本図はコン
タクト部の構造を示す断面図で、基板21上にニオブ(
Nb)の第1(下側)電極22が1000〜3000A
の厚さに形成され、基板21および第1電極22上には
S i 0w層23が形成されているo81偽層23に
は第1電極22上において窓部23′が形成され、この
窓部23′においてSin!膚23上23上されたNb
の第2(上側)電極24が第1電極22に接している。In a superconducting device, there is a contact part where two superconductor layers come into contact through a window in an insulator layer. The structure of a conventional contact part is shown in Figure 3. This figure shows the structure of a contact part. In the cross-sectional view, niobium (
Nb) first (lower) electrode 22 of 1000 to 3000 A
A window 23' is formed on the first electrode 22 in the o81 pseudo layer 23, which has a Si 0w layer 23 on the substrate 21 and the first electrode 22. At 23' Sin! Nb on the skin 23 on 23
A second (upper) electrode 24 of is in contact with the first electrode 22 .
第2電極24の厚さは5000〜1ooooλである。The thickness of the second electrode 24 is 5000 to 100λ.
このようなコンタクト部を持った超伝導デバイスにおい
て、高集積化な図るために素子の寸法のみならず配線幅
やコンタクト部の寸法が小さくなってきている。In superconducting devices having such contact portions, not only the dimensions of the device but also the wiring width and the dimensions of the contact portion are becoming smaller in order to achieve higher integration.
例えば線幅を4xnとすると、パターンの位置合せ余裕
を見込むとコンタクトホールの寸法は2鑞以下にしなけ
ればならない。このような寸法のコンタクトホールにお
いてコンタクト部の臨界電流(超伝導状態から常伝導状
態に転移する電流)は20mA程度の小さい値であった
。For example, if the line width is 4xn, the size of the contact hole must be 2 mm or less to allow for alignment margin for the pattern. In a contact hole having such dimensions, the critical current (current that transitions from a superconducting state to a normal conducting state) in the contact portion was a small value of about 20 mA.
本発明は従来のこのような欠点を解決して、コンタクト
部の臨界電流値を大きくすることを目的とする。It is an object of the present invention to solve these conventional drawbacks and increase the critical current value of the contact portion.
本発明者は、このような微小コンタクト部において臨界
電流値が小さくなる原因を検討した結果、コンタクト部
における下側電極の厚さが上側電極の厚さのl/10〜
1/2程度と薄いため、コンタクト部近傍の下側電極に
おける電流密度が高く常伝導状態へ転移し易いために臨
界電流が小さくなることに想到した。As a result of studying the cause of the small critical current value in such a minute contact part, the inventor found that the thickness of the lower electrode in the contact part is 1/10 to 1/10 of the thickness of the upper electrode.
Since it is as thin as about 1/2, the current density in the lower electrode near the contact portion is high and the transition to a normal conduction state is easy, resulting in a small critical current.
そこで、本発明では下側電極をコンタクト部において局
所的に厚くした。Therefore, in the present invention, the lower electrode is locally thickened at the contact portion.
下側電極を厚くすることにより、窓部で電流が集中して
も窓部近傍の下側電極における電流密度が緩和され、常
伝導状態への転移を抑えることができる。By making the lower electrode thicker, even if current is concentrated at the window, the current density at the lower electrode near the window is relaxed, and transition to a normal conduction state can be suppressed.
以下、本発明の一実施例を図を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例を示す図で(a)は平面図、
(b)は図(a)のA −A’線に沿った断面図である
。FIG. 1 is a diagram showing an embodiment of the present invention, and (a) is a plan view;
(b) is a cross-sectional view taken along line A-A' in figure (a).
基板1上に500〜2000Aの厚さのNb膜2がパタ
ーニング形成され、その上に1000〜3000Aの厚
さのNb膜からなる下側電極3が形成され、更に、その
上に810!膜゛4が形成されている。A Nb film 2 with a thickness of 500 to 2000 Å is formed on the substrate 1 by patterning, a lower electrode 3 made of a Nb film with a thickness of 1000 to 3000 Å is formed on it, and further 810! A film 4 is formed.
SiO*膜4のNb膜膜上上部分には=ンタクト用の窓
4′が形成され、5iO1114の上側電極5(厚さ5
000〜10000 AのNb膜)が窓4′において下
側電極3と接している。A contact window 4' is formed in the upper part of the Nb film of the SiO* film 4, and an upper electrode 5 of 5iO1114 (with a thickness of 5
000-10000 A) is in contact with the lower electrode 3 at the window 4'.
第2図にその製造工程を示す。Figure 2 shows the manufacturing process.
(a)に示すように基板1上にNb膜をスパッタ。As shown in (a), a Nb film is sputtered onto the substrate 1.
蒸着等により500〜2000Aの厚さに成膜した後レ
ジストをパターニング形成し、CF4と5〜3〇−の0
!の混合ガス(ガス圧50m Torr)’t’用いた
反応性イオンエツチングによpNbNb膜?:形成する
。次いで(b)に示すように、スパッタ、又は蒸着によ
シNb1lを1000〜3000A成膜した後、レジス
トをパターニング形成してCF番と0.を用いた反応性
イオンエツチングにより下側電極3を形成する。次いで
(e)に示すように、スパッタ、又は化学気相成長法に
より5i01膜4を形成した後、レジストタパターニノ
グ形成して、CHFIと5−〇〇、の混合ガス(ガス圧
15m Torr)を用いた反応性イオンエツチングに
より2μmの窓4”&形成する。窓4b形成にはリフト
オフ法を用いることもできる。次いで真空槽内でArガ
ス(ガス圧lQmTorr)を用いスパッタクリーニン
グ(陰極の自己バイアス電圧100〜300V)を約5
分間行う。これにより不要な配化膜等を除去した後、(
d)に示すようにNb膜をスパッタや蒸着により500
0〜10000 ^の厚さに成膜し、レジストをバター
二/グ形成後、同様にCF4と0!ガスを用いた反応性
イオンエツチングにより上側電極51に形成するO
以上の実施例ではNb膜21下側電極2の下に設けたが
、下側電極2の上に設けてもよい。After forming a film with a thickness of 500 to 2000A by vapor deposition etc., patterning the resist and forming a film with CF4 and 5 to 30-
! pNbNb film by reactive ion etching using a mixed gas (gas pressure 50 mTorr) 't'. :Form. Next, as shown in (b), after forming a film of 1000 to 3000 A of Nb11 by sputtering or vapor deposition, a resist is patterned to form a CF number and a 0. The lower electrode 3 is formed by reactive ion etching using. Next, as shown in (e), after forming a 5i01 film 4 by sputtering or chemical vapor deposition, resist patterning is performed and a mixed gas of CHFI and 5-〇〇 (gas pressure 15 m Torr) is formed. A window 4" of 2 μm in size is formed by reactive ion etching with Bias voltage 100-300V) about 5
Do this for minutes. After removing unnecessary alignment films, etc., (
As shown in d), a Nb film with a thickness of 500% is deposited by sputtering or vapor deposition.
After forming a film with a thickness of 0 to 10,000 ^ and forming a resist with butter, CF4 and 0! The Nb film 21 is formed on the upper electrode 51 by reactive ion etching using gas. In the above embodiment, the Nb film 21 is provided under the lower electrode 2, but it may be provided on the lower electrode 2.
以上説明した本発明によれば、コンタクト部の下側電極
を厚くしたので、電流密度が緩和されて常伝導状態への
転移が抑えられ、コンタクト部の臨界電流を大きくする
ことができる。According to the present invention described above, since the lower electrode of the contact portion is thickened, the current density is relaxed and transition to a normal conduction state is suppressed, and the critical current of the contact portion can be increased.
本発明者の測定によると、従来のコンタクト部における
臨界電流が20mA程度だったのに対し、上記実施例で
は40mA程度になることが確認された0According to measurements made by the inventor, the critical current in the conventional contact portion was approximately 20 mA, whereas it was confirmed to be approximately 40 mA in the above embodiment.
第1図は本発明の一実施例を示す図、
第2図は第1図に示す構造を製造するだめの工程順断面
図、
第3図は従来例を示す図である。
図において、2はNb膜、3は下側電極(第1超伝導体
)、4はS i Os層、4′は窓部、5は上側電極(
第2超伝導体)である。
特許出願人 工業技術院長 等々力 連子面図
#山国
(b)
木窒明j−* ft4グ1を元す図
茅 1 図
<a)
(b)
(C)
(d)
昶遣工掘1元寸断伽回
茅2図FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a cross-sectional view of the process for manufacturing the structure shown in FIG. 1, and FIG. 3 is a diagram showing a conventional example. In the figure, 2 is the Nb film, 3 is the lower electrode (first superconductor), 4 is the SiOs layer, 4' is the window, and 5 is the upper electrode (
second superconductor). Patent applicant Todoroki, Director of the Agency of Industrial Science and Technology Shunkanga Kaimo 2
Claims (1)
、該第1の超伝導体層(3)上に形成され、窓部(4)
を有する絶縁物層(4)と、 該絶縁物層(4)上に形成され、かつ該窓部(4′)に
おいて該第1の超伝導体層(3)と接する第2の超伝導
体層(5)とを備え、 該第1の超伝導体層(3)は、該窓部(4′)下におい
て局所的に厚く形成されてなることを特徴とする超伝導
デバイス。[Scope of Claims] A first superconductor layer (3) formed on a base (1), and a window (4) formed on the first superconductor layer (3).
a second superconductor formed on the insulator layer (4) and in contact with the first superconductor layer (3) at the window (4'); A superconducting device comprising: a layer (5), wherein the first superconductor layer (3) is locally thickly formed under the window (4').
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60155259A JPS6216585A (en) | 1985-07-16 | 1985-07-16 | Superconducting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60155259A JPS6216585A (en) | 1985-07-16 | 1985-07-16 | Superconducting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6216585A true JPS6216585A (en) | 1987-01-24 |
JPH0513393B2 JPH0513393B2 (en) | 1993-02-22 |
Family
ID=15602004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60155259A Granted JPS6216585A (en) | 1985-07-16 | 1985-07-16 | Superconducting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6216585A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59138255U (en) * | 1983-03-07 | 1984-09-14 | 株式会社日立製作所 | Josephson joining equipment |
-
1985
- 1985-07-16 JP JP60155259A patent/JPS6216585A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59138255U (en) * | 1983-03-07 | 1984-09-14 | 株式会社日立製作所 | Josephson joining equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH0513393B2 (en) | 1993-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |