JPS62142370A - Manufacture of optical semiconductor device - Google Patents
Manufacture of optical semiconductor deviceInfo
- Publication number
- JPS62142370A JPS62142370A JP60283928A JP28392885A JPS62142370A JP S62142370 A JPS62142370 A JP S62142370A JP 60283928 A JP60283928 A JP 60283928A JP 28392885 A JP28392885 A JP 28392885A JP S62142370 A JPS62142370 A JP S62142370A
- Authority
- JP
- Japan
- Prior art keywords
- linear
- laser
- groove
- projected
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、絶縁基板上に積層された半導体層とそれをは
さむ少なくとも一方が透明である導体層の各層にそれぞ
れ開溝加工を施し、単位光半導体装置を直列接続してな
る光半導体装置を製造する方法に関する。The present invention manufactures an optical semiconductor device in which unit optical semiconductor devices are connected in series by forming grooves in each layer of a semiconductor layer stacked on an insulating substrate and a conductor layer sandwiching the semiconductor layer, at least one of which is transparent. Regarding how to.
上述のような光半導体装置としては、半導体膜に非晶質
シリコン （以下ａ−Ｓｉと記す）層を用いて、例えば
第２図に示すような構造をとる太陽電池が知られている
。すなわち、ガラス基板等の透明絶縁基板１０上に透明
電極２１．２２．２３．２４・・・を短冊状に形成し、
その上に光起電力発生部であるａ−５ｉ層３１．３２．
３３．３４・・・、金属電極４１．４２．４３゜４４・
・・の順に形成する。一つの単位セルの透明電極がその
横の単位セルの金属Ｔ！Ｘ極と一部接触する構造となる
ように電極およびａ−５ｉｊｉＪのパターンを構成する
。最近、こうしたパターンの形成にレーザ加工技術が用
いられるようになってきている。
この方法により、従来のフォトエツチングを用いる場合
に比べてパターニングの工程数がσ友り、コストの低減
がはかれるという利点が生ずる。
従来のレーザビームを用いたパターニングでは、まず基
板１０の全面に形成された透明導電膜上に通常ＹＡＧレ
ーザを用いて集光されたレーザビームを掃引し、短冊状
の透明電極２１．２２．２３．・・・を形成する。その
上にａ ５ｉＪｉを全面に形成し、そののち同様に集
光されたレーザビームを１１■引することにより、切断
して短冊状のａ −Ｓｉ層３１．３２．３３・・・を形
成する。ひきつづいて金属層を全面に形成し、そののち
同様に集光されたレーザビームを掃引することにより、
切断して短冊状の金属’Ｗｉ４１゜４２、４３・・・を
形成して第２図のような直列接続構造を、得る。
ところカベこの方法においてはレーザビームを掃引する
ことにより加工を行うので、処理速度に限界があり、多
重ビームなどの工夫が必要であるが、Ｗ ”ＩＩが？ｊ
ｆ９１ｔになるなどの問題をかかえている。
特に大面積の太陽電池においては、実用上重要な問題で
ある。また金属層の切断の際には、レーザビームの反射
する量が多く、高いエネルギーのレーザビームが必要で
あり、薄い金属膜を下層に影響を与えることなく切断す
るのは困難であった。As the above-mentioned optical semiconductor device, a solar cell is known which uses an amorphous silicon (hereinafter referred to as a-Si) layer as a semiconductor film and has a structure as shown in FIG. 2, for example. That is, transparent electrodes 21, 22, 23, 24, etc. are formed in a strip shape on a transparent insulating substrate 10 such as a glass substrate,
A-5i layers 31, 32.
33.34..., metal electrode 41.42.43°44.
Form in the order of... The transparent electrode of one unit cell is connected to the metal T of the unit cell next to it! The electrode and a-5ijiJ patterns are configured to have a structure that partially contacts the X pole. Recently, laser processing technology has come to be used to form such patterns. This method has the advantage of reducing the number of patterning steps and reducing costs compared to the case of using conventional photoetching. In conventional patterning using a laser beam, first, a laser beam focused using a YAG laser is swept over a transparent conductive film formed on the entire surface of the substrate 10, and a rectangular transparent electrode 21, 22, 23 is formed. ．． ... to form. A 5iJi is formed on the entire surface, and then the same focused laser beam is applied to the substrate to cut it to form strip-shaped a-Si layers 31, 32, 33, etc. . By subsequently forming a metal layer on the entire surface and then sweeping the focused laser beam in the same way,
This is cut to form metal strips 41, 42, 43, . . . to obtain a series connection structure as shown in FIG. However, in this method, processing is performed by sweeping the laser beam, so there is a limit to processing speed, and devices such as multiple beams are required.
I am facing problems such as becoming f91t. This is a practically important problem, especially in large-area solar cells. Furthermore, when cutting a metal layer, a large amount of the laser beam is reflected and a high-energy laser beam is required, making it difficult to cut a thin metal film without affecting the underlying layer.
本発明は、上記の問題点を解決し、直列接続型光電変換
装置における各層の開溝加工を能率よく行うことのでき
る方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method that can solve the above-mentioned problems and efficiently cut grooves in each layer in a series-connected photoelectric conversion device.
本発明は、光学系によってエキシマレーザ光のような短
波長レーザ光を少なくとも被加工層の幅と同じ長さの線
状ビームとし、この線状ビームを照射して開溝加工する
ことにより、ビームを掃引する必要をなくし、加工に時
間を短縮して上述の目的を達成するものである。The present invention uses an optical system to convert a short wavelength laser beam such as an excimer laser beam into a linear beam having at least the same length as the width of the layer to be processed, and irradiates the linear beam to process the groove. This eliminates the need for sweeping, shortens processing time, and achieves the above objectives.
第１図は本発明の加工法を実施するための装置の一例で
ある。ガラスなどの絶縁基板上に導体または半導体膜、
あるいはこれらの積ｉ膜を形成した膜形成基板１に、＾
「ＦあるいはＫｒＦ、ＸｅＣｌなどの横方向放電型のエ
キシマレーザ２からの光を照射する。これらのレーザか
らの紫外レーザ光３はエネルギー分布が横方向が均一で
縦方向がガウンアン分布となっているので、二つの二曲
面円柱レンズ４と平面鏡５を用いて線状のレーザビーム
６に変換して膜形成基板１に照射し、この部分を焼き切
ることにより膜を線状に開溝することができる。
次に照射を中断し、矢印７の方向に膜形成基板１を必’
Ｉｔだけ移動し、再び同様の照射を行って線状の開溝を
行う、これの繰り返しによって大面積基板上の薄膜の短
冊状の加工が効率よくでき量産に適する。
３０Ｘ４０ｃｊの絶縁基板上に透明導電膜と１ＪＪ１ａ
膜厚のａ−３ｉ膜を積層したものについてａ −５１１
１ｇを開溝する場合、エキシマレーザ２としてＸｅＣｌ
エキシマレーザ （操り返し周波数１６５ｐｐｓ、出力
３０Ｗ）を用いて長さ３０ｃｍの線状で幅２０−の波長
３０８ｒ＋ｎ＋のレーザビームを形成し、パルス状に１
０回繰り返して１１α肘することにより、ａ −５ｉ膜
に２０−幅で３０ｃｍの開溝加工ができた。
３０Ｘ４０ｃａｌの絶縁基板上に透明導電ｊ模と、ａ
−５ｉ半導体膜と、５００ｎｍの厚さのアルミニウム膜
を積層したものについて、アルミニウム１模を開溝する
場合は、エキシマレーザ２としてＡｒＦエキシマレーザ
（繰り返し周波数１５０ｐｐｓ 、出力２２Ｗ）を用
いて、３０ｃｍの線状で幅２０．ｙｍの波長１９，３ｎ
ｍのレーザビームを形成し、パルス状にｌＯ［！］Ｉ２
り返して照射することにより、アルミニウム膜に２０ｐ
ｍ幅で３０ｃ＋ｓの開溝加工ができた。エキシマレーザ
は短波長で高エネルギーであるため、このような薄い金
属膜の加工が容易である。
以上は紫外光源としてエキシマレーザを用いた実施例に
ついて述べたが、エキシマレーザに限定される訳ではな
（、これらと同等の出力を存する短波長レーザであれば
、同様に使用できることはいうまでもない。
【発明の効果］
本発明によれば、エネルギーの高い短波長レーザ光を光
学系により線状ビームとして光半導体装置の各層の開溝
加工を行うもので、点状のレーザビームを掃引して開溝
加工する場合に比べて処理速度が飛躍的に向上するほか
、従来加工困難であった金属薄膜の加工も可能になり、
特に太陽電池などの大面積光半導体装置の製造において
その効果は著しい。FIG. 1 shows an example of an apparatus for carrying out the processing method of the present invention. A conductor or semiconductor film on an insulating substrate such as glass,
Alternatively, on the film forming substrate 1 on which these i-layer films are formed,
Light from a horizontal discharge type excimer laser 2 such as F, KrF, or XeCl is irradiated.The ultraviolet laser light 3 from these lasers has an energy distribution that is uniform in the horizontal direction and has a Gaunian distribution in the vertical direction. Therefore, by using two bicurved cylindrical lenses 4 and a plane mirror 5 to convert the laser beam into a linear laser beam 6, irradiate it onto the film forming substrate 1, and burn off this portion, it is possible to open the film in a linear groove. Next, interrupt the irradiation and move the film forming substrate 1 in the direction of the arrow 7.
By repeating this process of moving by It, and performing the same irradiation again to open a linear groove, it is possible to efficiently process a thin film into strips on a large-area substrate, making it suitable for mass production. Transparent conductive film and 1JJ1a on 30X40cj insulating substrate
Regarding the laminated film of a-3i film thickness a-511
When opening a groove of 1g, use XeCl as the excimer laser 2.
Using an excimer laser (return frequency 165 pps, output 30 W), a linear laser beam with a length of 30 cm and a width of 20 - and a wavelength of 308 r + n + is formed, and it is pulsed with 1
By repeating 0 times and applying 11α strokes, a groove with a width of 20 cm and a width of 30 cm was formed in the a-5i film. Transparent conductive j pattern and a on 30x40 cal insulating substrate
-5i semiconductor film and an aluminum film with a thickness of 500 nm, when trenching the aluminum 1 pattern, use an ArF excimer laser (repetition frequency 150 pps, output 22 W) as the excimer laser 2. Linear and width 20. Wavelength of ym 19.3n
m laser beam is formed and pulsed lO[! ]I2
By repeating irradiation, 20p was applied to the aluminum film.
It was possible to open a groove of 30c+s with a width of m. Since the excimer laser has a short wavelength and high energy, it is easy to process such thin metal films. Although the above example uses an excimer laser as the ultraviolet light source, it is not limited to excimer lasers (it goes without saying that any short wavelength laser with an output equivalent to these can be used in the same way). [Effects of the Invention] According to the present invention, trenches are formed in each layer of an optical semiconductor device by using a high-energy, short-wavelength laser beam as a linear beam using an optical system. The processing speed is dramatically improved compared to the process of opening grooves using a method, and it is also possible to process thin metal films, which were previously difficult to process.
The effect is particularly remarkable in the manufacture of large-area optical semiconductor devices such as solar cells.
第１図は本発明の一実施例におけるレーザ加工の斜視図
、第２図は本発明を製造に実権することのできる太陽電
池の断面図である。
１：膜形成基板、２：エキシマレーザ、３：レーザ光、
４：円柱レンズ、５：平面鏡、６：線状ビーム。
第１図FIG. 1 is a perspective view of laser processing according to an embodiment of the present invention, and FIG. 2 is a sectional view of a solar cell to which the present invention can be manufactured. 1: film formation substrate, 2: excimer laser, 3: laser light,
4: Cylindrical lens, 5: Plane mirror, 6: Linear beam. Figure 1
Claims (1)
なくとも一方が透明である導体層の各層にそれぞれ開溝
加工を施し、単位光半導体装置を直列接続してなる光半
導体装置を製造する際に、光学系によって短波長レーザ
光を少なくとも被加工層の幅と同じ長さの線状ビームと
し、該線状ビームを照射して開溝加工することを特徴と
する光半導体装置の製造方法。1) When manufacturing an optical semiconductor device in which a semiconductor layer laminated on an insulating substrate and a conductor layer sandwiching the semiconductor layers, at least one of which is transparent, are grooved and unit optical semiconductor devices are connected in series. A method of manufacturing an optical semiconductor device, characterized in that an optical system converts the short wavelength laser beam into a linear beam having at least the same length as the width of the layer to be processed, and irradiates the linear beam to perform groove cutting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60283928A JPH065778B2 (en) | 1985-12-17 | 1985-12-17 | Method for manufacturing optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60283928A JPH065778B2 (en) | 1985-12-17 | 1985-12-17 | Method for manufacturing optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62142370A true JPS62142370A (en) | 1987-06-25 |
| JPH065778B2 JPH065778B2 (en) | 1994-01-19 |
Family
ID=17672025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60283928A Expired - Fee Related JPH065778B2 (en) | 1985-12-17 | 1985-12-17 | Method for manufacturing optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065778B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187342A (en) * | 1989-01-13 | 1990-07-23 | Canon Inc | Ink jet recording head |
| JPH02198857A (en) * | 1989-01-28 | 1990-08-07 | Canon Inc | Manufacture of ink-jet recording head and ink-jet recording head manufactured through said method |
| US5849043A (en) * | 1992-03-26 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for laser ion doping |
| US7303980B2 (en) | 1995-07-25 | 2007-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5794482A (en) * | 1980-12-05 | 1982-06-11 | Hitachi Ltd | Pattern forming device by laser |
| JPS6070722A (en) * | 1983-09-26 | 1985-04-22 | Rikagaku Kenkyusho | Laser cvd method and device thereof |
| JPS61105885A (en) * | 1984-10-29 | 1986-05-23 | Semiconductor Energy Lab Co Ltd | Photo-processing |
-
1985
- 1985-12-17 JP JP60283928A patent/JPH065778B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5794482A (en) * | 1980-12-05 | 1982-06-11 | Hitachi Ltd | Pattern forming device by laser |
| JPS6070722A (en) * | 1983-09-26 | 1985-04-22 | Rikagaku Kenkyusho | Laser cvd method and device thereof |
| JPS61105885A (en) * | 1984-10-29 | 1986-05-23 | Semiconductor Energy Lab Co Ltd | Photo-processing |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187342A (en) * | 1989-01-13 | 1990-07-23 | Canon Inc | Ink jet recording head |
| JPH02198857A (en) * | 1989-01-28 | 1990-08-07 | Canon Inc | Manufacture of ink-jet recording head and ink-jet recording head manufactured through said method |
| US5849043A (en) * | 1992-03-26 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for laser ion doping |
| US6358784B1 (en) | 1992-03-26 | 2002-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US6655767B2 (en) | 1992-03-26 | 2003-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device |
| US7169657B2 (en) | 1992-03-26 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US7781271B2 (en) | 1992-03-26 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US7303980B2 (en) | 1995-07-25 | 2007-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and apparatus |
| US7452788B2 (en) | 1995-07-25 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065778B2 (en) | 1994-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |