JPS62141548A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS62141548A
JPS62141548A JP60284626A JP28462685A JPS62141548A JP S62141548 A JPS62141548 A JP S62141548A JP 60284626 A JP60284626 A JP 60284626A JP 28462685 A JP28462685 A JP 28462685A JP S62141548 A JPS62141548 A JP S62141548A
Authority
JP
Japan
Prior art keywords
pattern
resist
irradiation quantity
exposure
prescribed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60284626A
Other languages
Japanese (ja)
Inventor
Takaaki Katou
加藤　高秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60284626A priority Critical patent/JPS62141548A/en
Publication of JPS62141548A publication Critical patent/JPS62141548A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain the sectional shape of a resist pattern having high contrast by making double exposure at the adequate irradiation quantity consisting of the exposure by the prescribed irradiation quantity corresponding to the prescribed pattern shape and the exposure by the prescribed irradiation quantity to the central part of the pattern shape. CONSTITUTION:The irradiation quantity to the prescribed pattern forming region is set at n-times the quantity required for the pattern formation on the upper and lower layer resists to be applied and the irradiation quantity to the region which includes said region and has the width of 2-3 times the size of the prescribed pattern is set at k-times the quantity necessary for the pattern formation. The values n and k are so determined that the irradiation quantity to the prescribed pattern part attains the necessary for the pattern formation. The adequate irradiation quantity as a whole is eventually applied to each of the two layers of the upper and lower layers when the most adequate irradiation quantity to take the sensitivity of the upper and lower two layers into consideration is applied to the pattern having the line width of 2-3 times the pattern width of the actually designed pattern and when the pattern of the line width corresponding to the actually designed pattern is irradiated and exposed double at the adequate irradiation quantity. As a result, the resist pattern having a T-shaped section is obtd.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はパターン形成方法に関し、さらに詳しくは、
２種類の異なるポジ型レジストによる２層レジスト構造
を用いてレジストパターンを形成−島−−ａｘ−＋Ｌ−
、、ａｍ１．＋ｔＡ、４−＠−５４−＾ｍ、ｄａ＊ｑｐ
Ｉｔ１−表１１−一、−−１１ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a pattern forming method, and more specifically,
Forming a resist pattern using a two-layer resist structure using two different types of positive resists -Island--ax-+L-
,,am1. +tA, 4-@-54-^m, da*qp
It1-Table 11-1, --11.

〔従来の技術〕[Conventional technology]

従来例によるこの種の２層パターン形成方法を第３図お
よび第４図（ａ）、（ｂ）に示す。A conventional two-layer pattern forming method of this kind is shown in FIGS. 3 and 4(a) and (b).

すなわち、第３図は、２種類の異なるポジ型レジスト、
例えば感度の異なるポジ型レジストｌおよび２を、例え
ばＳｉなどの半導体基板３上に、順次に塗布形成して２
層レジスト構造を構成した試料である。That is, FIG. 3 shows two different types of positive resists,
For example, positive resists 1 and 2 having different sensitivities are sequentially coated and formed on a semiconductor substrate 3 such as Si.
This is a sample with a layered resist structure.

こ−で、このように構成される第３図試料に対し、所定
量の光または電子ビーム４を照射して露光させ、かつこ
れを現像させたとき１例えば上層レジスト１の感度が下
層レジスト２の感度よりも低い場合には、第４図（ａ）
に見られるように、上層レジスト１の開口部が下層レジ
スト２の開口部より狭くなって、いわゆる、アンダーカ
ット形状を呈し、またこれとは逆に、上層レジストｌの
感度が下層レジスト２の感度よりも高い場合には、同図
（ｂ）に見られるように、上層レジスト１の開口部が下
層レジスト２の開口部より広くなって、いわゆる、オー
バーカット形状を呈することになる。Therefore, when the sample shown in FIG. If the sensitivity is lower than that of Fig. 4(a)
As seen in , the opening of the upper resist 1 is narrower than the opening of the lower resist 2, creating a so-called undercut shape, and conversely, the sensitivity of the upper resist 1 is lower than the sensitivity of the lower resist 2. If it is higher than that, the opening of the upper resist 1 becomes wider than the opening of the lower resist 2, as shown in FIG. 2B, resulting in a so-called overcut shape.

しかしてこれらの何れの場合にあっても、形成されるレ
ジストの断面形状は、レジストの感度。However, in any of these cases, the cross-sectional shape of the resist formed depends on the sensitivity of the resist.

光または電子ビームの照射量、あるいは現像条件などに
よって一義的に決定される。そしてこの際に、パターン
幅を決めるのは、第４図（ａ）の場合には、上層レジス
トｌの開口部の幅であり、例えばリフトオフ法によって
、金属薄膜からなるパターンを形成するときは、この開
口部の幅によりパターン寸法が定められ、一方、第４図
（ｂ）の場合には、下層レジスト２の開口部の幅により
パターン寸法が定められ、こ−では例えば半導体基板３
上にエツチングパターンを形成するとき、そのパターン
幅がこの下層レジスト２の開口部の幅寸法によって決め
られるのである。It is uniquely determined by the amount of light or electron beam irradiation, development conditions, etc. In this case, the pattern width is determined by the width of the opening in the upper resist l in the case of FIG. The pattern size is determined by the width of this opening, and on the other hand, in the case of FIG. 4(b), the pattern size is determined by the width of the opening in the lower resist 2.
When an etching pattern is formed thereon, the width of the pattern is determined by the width of the opening in the lower resist 2.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、前記従来例方法にあって、パターン微細
化の立場からは、第４図（ａ）の場合、上層レジストｌ
の開口部の微細化を、また同図（ｂ）の場合、下層レジ
スト２の開口部の微細化を、それぞれに行なわなければ
ならず、このとき、さきに述べた従来例方法でのように
、２層レジスト構造に対する１ｆＲａ先方法では、適用
する２種類のレジストの感度によってそれぞれの開口部
寸法かはＣ決定されて了い、上下各層１．２間での開口
部寸法差を大きくするのが困難であるという問題点があ
った。However, in the conventional method, from the standpoint of pattern refinement, in the case of FIG. 4(a), the upper layer resist l
In the case of (b) in the same figure, the openings in the lower resist 2 must be made finer, and at this time, as in the conventional method described earlier, In the 1fRa method for a two-layer resist structure, each opening size is determined by the sensitivity of the two types of resists applied, and it is necessary to increase the difference in opening size between the upper and lower layers. The problem was that it was difficult.

この発明方法は従来方法でのこのような問題点を改善さ
せるためになされたものであって、その目的とするとこ
ろは、２層レジスト構造における上下各層間での開口部
寸法差を、パターン微細化を妨げずに大きくできて、コ
ントラストの強いレジストパターン断面形状を得るため
のパターン形成方法を提供することである。The method of this invention was developed to improve the problems of the conventional method, and its purpose is to reduce the difference in opening size between the upper and lower layers in a two-layer resist structure by improving pattern fineness. It is an object of the present invention to provide a pattern forming method for obtaining a cross-sectional shape of a resist pattern which can be made large without hindering the resist pattern formation and has a strong contrast.

〔問題点を解決するための手段〕[Means for solving problems]

前記目的を達成するため、この発明方法においては、２
種類の異なるポジ型レジストによる２層レジスト構造を
有し、この２層レジストの表面側から光または電子ビー
ムを照射露光させ、かっこれを現像して、レジスト各層
間に、断面がオーバーカット、もしくはアンダーカット
形状をしたパターンを形成する場合、所定パターン形状
に対応した所定照射量による露光と、同パターン形状中
心部への所定照射量による露光との、２重露光をなすよ
うにしたものである。In order to achieve the above object, in the method of this invention, 2
It has a two-layer resist structure using different types of positive resists, and by exposing the two-layer resist to light or electron beams from the surface side and developing the parentheses, the cross section is overcut or overcut between each resist layer. When forming a pattern with an undercut shape, double exposure is performed: exposure with a predetermined dose corresponding to the predetermined pattern shape and exposure with a predetermined dose to the center of the pattern shape. .

〔作　　　用〕[For production]

すなわち、この発明方法では、２層レジストへの所定パ
ターン形状に対応した所定照射量ト、よる露光と、同パ
ターン形状中心部への所定照射量による露光との、２重
露光をなすようにした−め、結果として、レジスト各層
間に、断面がオーバーカット、もしくはアンダーカット
形状をしたコントラストの強い断面形状のレジストパタ
ーンを形成できるのである。That is, in the method of the present invention, double exposure is performed: exposure to a two-layer resist with a predetermined dose corresponding to a predetermined pattern shape, and exposure to a predetermined dose to the center of the same pattern shape. As a result, it is possible to form a resist pattern having a cross-sectional shape with a strong contrast and an overcut or undercut shape between each resist layer.

〔実　施　例〕〔Example〕

以下この発明に係るパターン形成方法の一実施例につき
、第１図（ａ）ないしくｆ）を参照して詳細に説明する
。Hereinafter, one embodiment of the pattern forming method according to the present invention will be described in detail with reference to FIGS. 1(a) to 1(f).

まず、この発明方法においては、２層レジスト構造に対
して２玉露光方法を用いる。すなわち。First, in the method of this invention, a two-ball exposure method is used for a two-layer resist structure. Namely.

この実施例による２重露光方法では、所定パターン形成
領域への照射量を、適用する上層および下層レジストで
のパターン形成に必要な量のｎ倍に設定すると共に、同
領域を含んで所定パターン寸法の２〜３倍の幅をもつ領
域への照射量を、パターン形成に必要な量の壱倍に設定
し、かつこれらのｎおよび灸の値をして、所定パターン
部への照射量がパターン形成に必要な値となるように決
定するのである。In the double exposure method according to this embodiment, the amount of irradiation to a predetermined pattern forming area is set to n times the amount required for pattern formation in the applied upper and lower resist layers, and the predetermined pattern size including the same area is set. The amount of irradiation to a region with a width 2 to 3 times larger than the amount required for pattern formation is set to 1 times the amount necessary for pattern formation. The value is determined to be the value required for formation.

つまり、こ−ではパターン形成に必要とされる照射量を
Ｎとしたとき、所定パターン形成領域には、ｎＮ＋　＆
ｎＮ＝　（Ｓ＋ｋ）ｎＮとなり、（１＋１）ｎＮ＝Ｎか
ら、（１＋ｔ）ｎ＝１が得られ、また＆ｎＮが同領域を
含む周辺領域への照射量となるが、ｋｎの値を２種類の
レジストの感度を考慮して定めると、上式に連立して長
およびｎの値を設定し得る０例えば上層レジストの感度
がＩ　Ｘ　１Ｇ−５Ｃ／ｃシ程度で、下層レジストの感
度がＩＸ　１０−’Ｃ／ｃｊ程度の場合にあっては、　
　Ｎ＝　　ｌＸｌ０−４で（１＋４）ｎ　＝ｌ　、１ｎ
Ｎ＝　　ｔｘｔｏ−５よりｔ＝　’／ｇ＝　０．１１　
、　　ｎ＝　０．９で、ｔｎ＝０．１　となって、パタ
ーン周辺部にはパターン中心部の０．１倍の照射量を与
えることにより、上下２層のそれぞれレジスト層に対し
て適正な照射露出を行なうことができるのである。In other words, in this case, when the dose of radiation required for pattern formation is N, the predetermined pattern formation area has nN+ &
nN= (S+k)nN, and from (1+1)nN=N, (1+t)n=1 is obtained, and &nN is the irradiation amount to the surrounding area including the same area, but the value of kn is divided into two types. When determined in consideration of the sensitivity of the resist, the values of length and n can be set simultaneously using the above equations. For example, the sensitivity of the upper layer resist is about I - In the case of about C/cj,
N = lXl0-4 (1+4)n = l, 1n
From N= txto-5, t= '/g= 0.11
, n = 0.9, tn = 0.1, and by giving the periphery of the pattern 0.1 times the irradiation dose as the center of the pattern, the upper and lower resist layers can be properly exposed to each other. It is possible to perform irradiation exposure.

次に第１図（ａ）、（ｂ）および第２図は、この発明の
具体的な一実施例を示し、これらの実施例各図中、前記
第３図および第４図（ａ）、（ｂ）従来例と同一符号は
同一または相当部分を表わしており、またこの実施例の
場合、上層レジスト１の感度が下層レジスト２の感度よ
りも高いものと仮定している。Next, FIGS. 1(a), (b) and 2 show a specific embodiment of the present invention, and among these embodiments, FIGS. 3 and 4(a), (b) The same reference numerals as in the conventional example represent the same or equivalent parts, and in the case of this embodiment, it is assumed that the sensitivity of the upper resist 1 is higher than the sensitivity of the lower resist 2.

従ってこの実施例では、第１図（ａ）において。Therefore, in this embodiment, in FIG. 1(a).

実際の設計パターンの線幅の２〜３倍の線幅をもつパタ
ーンで、上下２層の感度を考慮した最適な照射量を与え
ると共に、同図（ｂ）に示すように。The pattern has a line width that is two to three times the line width of the actual design pattern, and provides the optimal dose taking into consideration the sensitivity of the upper and lower layers, as shown in FIG. 2(b).

実際の設計パターンに相当する線幅のパターンを適切な
照射量で２重に照射露光させると、上下２層のレジスト
それぞれに全体として適切な照射量が与えられることに
なり、その結果として、こ−では第２図に見られるよう
に、断面Ｔ字状をなすレジストパターンが得られ、しか
もこの実施例による２重露光方法の場合、上層レジスト
ｌの開口幅を自由に設定できると共に、下層レジスト２
の開口幅を常時一定に保持できるのである。If a pattern with a line width corresponding to the actual design pattern is exposed twice at an appropriate dose, an appropriate dose will be applied to each of the upper and lower resist layers as a whole, and as a result, this will occur. - As seen in FIG. 2, a resist pattern with a T-shaped cross section is obtained.Moreover, in the case of the double exposure method according to this embodiment, the opening width of the upper resist l can be freely set, and the lower resist 2
This allows the opening width to be kept constant at all times.

従ってこの場合１例えば前記第２図に示した断面Ｔ字状
のレジストパターンを使用して、　ＡｆＬとかＡｕなど
の金属を蒸着した後、レジスト除去するリフトオフ法を
適用することにより、同金属の断面Ｔ字状パターンを容
易に得ることができ、この断面Ｔ字状金属パターンは、
−例としてＧａＡｓデバイスにおけるサブミクロンゲー
ト用電極に用いるとき、ゲート抵抗の増加を抑制できて
、そのデバイス特性を向上し得るのである。Therefore, in this case 1, for example, using a resist pattern with a T-shaped cross section as shown in FIG. A T-shaped pattern can be easily obtained, and this cross-sectional T-shaped metal pattern is
- For example, when used as a submicron gate electrode in a GaAs device, increase in gate resistance can be suppressed and device characteristics can be improved.

またこ−でこの実施例方法を適用したときの。Also, here is what happens when the method of this embodiment is applied.

一層具体的な数値を次に挙げる。More specific numbers are listed below.

すなわち９例えば上層レジス）１として感度がＩ　Ｘ　
ｌＯ’ｃ／ｃ＋Ｊ程度の０ＥＢＲ−１０３０を、下層レ
ジスト２として感度がＬＸ　ｌｏ’ｃ／ｃｄ程度のＰＭ
ＭＡをそれぞれに用いて、前記断面Ｔ字状の金属パター
ンを形成する場合、前記したように、幅０．８〜１．Ｑ
　ＩＬｔａのパターンをＩＸ　１Ｏ−５Ｃ／ｃ踊照射騒
で露光させると共に、また一方、この照射パターンの中
心部に幅０．１〜０．２　終履のパターンをｌＸｌ０　
　Ｃ／ｃ♂の照射量で露光させることにより、下層レジ
スト２の’　　ＰＭＭＡには、　ｌＸｌ０−’Ｃ／ｃ♂
の照射量が与えられ、上層レジストｌでの０ＥＢＲ−１
０３０の中心部についてこそ、　ｌＸｌ０　　Ｃ／ｃ７
の照射量でオーバー露光となるもの一１中心部以外の大
部分がｌＸｌ０　　Ｃ／ｃ♂の適正照射場となって、形
成されるパターンは殆んど広がらず、結果的に、ＰＭＭ
Ａには幅０．１〜０．２　ＪＬＩ。That is, the sensitivity is I
0EBR-1030 with a sensitivity of about 10'c/c+J is used as the lower resist 2, and PM with a sensitivity of about 10'c/cd is used.
When forming the metal pattern having the T-shaped cross section using each MA, as described above, the width is 0.8 to 1. Q
The pattern of ILta is exposed with IX 1O-5C/c irradiation noise, and on the other hand, a pattern with a width of 0.1 to 0.2 mm is exposed at the center of this irradiation pattern.
By exposing with a dose of C/c♂, the 'PMMA of the lower resist 2 has lXl0-'C/c♂.
0EBR-1 on the upper resist l.
For the center of 030, lXl0 C/c7
Overexposure occurs when the irradiation amount is
A has a width of 0.1 to 0.2 JLI.

０ＥＢＲ−１０３０には幅０．８〜１．ＯＩＬｔａのレ
ジストパターンを形成でき、極めてコントラストの強い
オーバーカット形状が得られる。0EBR-1030 has a width of 0.8 to 1. A resist pattern of OILta can be formed, and an overcut shape with extremely strong contrast can be obtained.

なおこの実施例では、上層レジス目の感度□カー下層レ
ジスト２の感度よりも高いものとの仮定で述べたが、勿
論、逆の場合にも適用できる。°例えば、」二層レジス
トｌが１ｘ　ｔｏ−５ｃ／ｃＪ程度の感度。Although this embodiment has been described on the assumption that the sensitivity of the upper resist pattern □ is higher than the sensitivity of the lower resist layer 2, it is of course applicable to the opposite case. For example, a two-layer resist l has a sensitivity of about 1x to-5c/cJ.

下層レジスト２がｌ　Ｘ　１Ｏ−４Ｃ／ｃ♂程度の感度
の場合には、パターンの中心部に０．９Ｘ　１０−’Ｃ
／ｃｊの照射量、パターンの周６辺部にＩＸ　１Ｏ−５
Ｃ／ｃ♂の照射量を□それぞれに与えることにより、リ
フトオフに適したアンダーカットパターンが得られ、か
つまたこの場合は、上層レジスト１の線幅を下層レジス
ト２の線幅とは独立に設定できることから、極めてコン
トラストの強いアンダーカット形状が得られるのである
。When the lower resist 2 has a sensitivity of about l x 10-4C/c♂, 0.9 x 10-'C is applied to the center of the pattern.
Irradiation amount of /cj, IX 1O-5 on the 6 sides of the pattern
By applying the C/C♂ dose to each □, an undercut pattern suitable for lift-off can be obtained, and in this case, the line width of the upper resist 1 is set independently of the line width of the lower resist 2. As a result, an undercut shape with extremely strong contrast can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように、この発明方法によれば。 As detailed above, according to the method of this invention.

２種類の異なるポジ型レジストによる２居レジスト構造
に対して、所定パターン形状に対応した所定照射量によ
る露光と、同パターン形状中心部への所定照射量による
露光との、適切な照射量での２重露光をなすようにした
から、レジスト各層間に、断面オーバーカット形状の、
あるいはアンダーカット形状のレジストパターンを１強
いコントラストで良好かつ効果的に形成でき、しかも形
成手段自体が比較的簡単で、容易に実施できるなどの特
長を有するものである。For a two-position resist structure made of two different types of positive resists, exposure with a predetermined dose corresponding to a predetermined pattern shape and exposure with a predetermined dose to the center of the same pattern shape are performed at an appropriate dose. Since double exposure is performed, there is a cross-sectional overcut shape between each resist layer.
Alternatively, an undercut-shaped resist pattern can be formed satisfactorily and effectively with a strong contrast, and the forming means itself is relatively simple and can be easily implemented.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）、（ｂ）はこの発明方法の一実施例を適用
した２層レジスト構造に対する照射露光状態を各別に示
すそれぞれ断面図、第２図は同上レジストパターンの形
成状態を示す断面図であり、また第３図は同上従来例方
法による２層レジスト構造に対する照射露光状態を示す
断面図、第４図（ａ）。 （ｂ）は同上レジストパターンの形成状態を各別に示す
それぞれ断面図である。 １．２・・・・２種類の異なるポジ型レジスト、３・・
・・半導体基板、４・・・・光または電子ビーム。 代理人　　大　　岩　　増　　雄 第１図（ａ） 第１図（ｂ） 第２図 図 Ａ（Ｑ） ］（ｂ） モし・FIGS. 1(a) and (b) are cross-sectional views showing the irradiation exposure state of a two-layer resist structure to which an embodiment of the method of the present invention is applied, and FIG. 2 is a cross-sectional view showing the formation state of the same resist pattern. FIG. 3 is a cross-sectional view showing a state of irradiation and exposure to a two-layer resist structure by the conventional method same as above, and FIG. 4(a). (b) is a sectional view showing the formation state of the same resist pattern as above. 1.2... Two different types of positive resist, 3...
...Semiconductor substrate, 4...Light or electron beam. Agent Masuo Oiwa Figure 1 (a) Figure 1 (b) Figure 2 A (Q) ] (b) Moshi・

Claims (1)

【特許請求の範囲】[Claims] ２種類の異なるポジ型レジストによる２層レジスト構造
を有し、この２層レジストの表面側から光または電子ビ
ームを照射露光させ、かつこれを現像して、２層レジス
ト層に断面がオーバーカット、もしくはアンダーカット
形状をしたパターンを形成する方法において、所定パタ
ーン形状に対応した所定照射量による露光と、同パター
ン形状中心部への所定照射量による露光との、２重露光
をなすようにしたことを特徴とするパターン形成方法。It has a two-layer resist structure using two different types of positive resists, and by exposing the two-layer resist to light or electron beams from the front side and developing it, the cross-section of the two-layer resist layer is overcut, Or, in a method of forming a pattern having an undercut shape, double exposure is performed: exposure with a predetermined dose corresponding to a predetermined pattern shape and exposure with a predetermined dose to the center of the pattern shape. A pattern forming method characterized by:
JP60284626A 1985-12-16 1985-12-16 Formation of pattern Pending JPS62141548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60284626A JPS62141548A (en) 1985-12-16 1985-12-16 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60284626A JPS62141548A (en) 1985-12-16 1985-12-16 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS62141548A true JPS62141548A (en) 1987-06-25

Family

ID=17680897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60284626A Pending JPS62141548A (en) 1985-12-16 1985-12-16 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS62141548A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5725997A (en) * 1995-07-26 1998-03-10 Tdk Corporation Method for preparing a resist pattern of t-shaped cross section
US6451511B1 (en) * 1998-08-06 2002-09-17 Tdk Corporation Method for forming-photoresist mask
WO2005062129A1 (en) * 2003-12-12 2005-07-07 Hewlett-Packard Development Company, L.P. Method for making fluid emitter orifice
JP2008116926A (en) * 2006-10-13 2008-05-22 Nissan Chem Ind Ltd Low-sensitivity photosensitive resist undercoat forming composition
WO2012121138A1 (en) * 2011-03-09 2012-09-13 シャープ株式会社 Method for forming resist pattern, method for forming wiring pattern, and method for manufacturing active matrix substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5725997A (en) * 1995-07-26 1998-03-10 Tdk Corporation Method for preparing a resist pattern of t-shaped cross section
US6451511B1 (en) * 1998-08-06 2002-09-17 Tdk Corporation Method for forming-photoresist mask
WO2005062129A1 (en) * 2003-12-12 2005-07-07 Hewlett-Packard Development Company, L.P. Method for making fluid emitter orifice
CN100458569C (en) * 2003-12-12 2009-02-04 惠普开发有限公司 Method for making fluid emitter orifice
JP2008116926A (en) * 2006-10-13 2008-05-22 Nissan Chem Ind Ltd Low-sensitivity photosensitive resist undercoat forming composition
WO2012121138A1 (en) * 2011-03-09 2012-09-13 シャープ株式会社 Method for forming resist pattern, method for forming wiring pattern, and method for manufacturing active matrix substrate

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