JPS62137873A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPS62137873A JPS62137873A JP60278013A JP27801385A JPS62137873A JP S62137873 A JPS62137873 A JP S62137873A JP 60278013 A JP60278013 A JP 60278013A JP 27801385 A JP27801385 A JP 27801385A JP S62137873 A JPS62137873 A JP S62137873A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- substrate
- amorphous silicon
- silicon layer
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005452 bending Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 14
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 7
- 239000010935 stainless steel Substances 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光電変換装置の製造方法、特に基板を波形に折
り曲げて光電変換素子で反射される光を近傍の光電変換
素子に入射させることによって光電変換効率を向上した
光電変換装置の製造方法に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for manufacturing a photoelectric conversion device, in particular, a method for manufacturing a photoelectric conversion device, in particular, by bending a substrate into a waveform and making light reflected by a photoelectric conversion element enter a nearby photoelectric conversion element. The present invention relates to a method of manufacturing a photoelectric conversion device with improved photoelectric conversion efficiency.
（従来の技術）
従来、ガラス基板上に透明電極を形成し、その上に、例
えば水素化アモルファス・シリコン（α−８ｉ ：Ｈ
）より成る光電変換層を堆積し、ざらにその上にアルミ
ニウム等の電極を堆積して太陽電池を構成することは既
知である。このような太陽電池ではガラス基板側を入射
側としているが、屈折率１の空気と、屈折率が約１．５
５のガラス基板と、屈折率的２．０の透明導電膜と、屈
折率３．５〜５のアモルファス・シリコンとから成る窓
側表面において反射が生じ、入射光の２０〜３０％の光
が反射されて損失となっている。このため、ガラス基板
表面に反射防止コートを被着し、透明電極表面を凹凸化
することも提案されているが、反射損失は依然として１
０〜２０％もある。(Prior Art) Conventionally, a transparent electrode is formed on a glass substrate, and hydrogenated amorphous silicon (α-8i:H
It is known that a solar cell can be constructed by depositing a photoelectric conversion layer consisting of a photovoltaic material (e.g., a photoelectric conversion layer) and roughly depositing an electrode such as aluminum on the photoelectric conversion layer. In such solar cells, the glass substrate side is the incident side, but air with a refractive index of 1 and air with a refractive index of approximately 1.5
Reflection occurs on the window side surface made of the glass substrate No. 5, a transparent conductive film with a refractive index of 2.0, and amorphous silicon with a refractive index of 3.5 to 5, and 20 to 30% of the incident light is reflected. This has resulted in a loss. For this reason, it has been proposed to apply an antireflection coating to the surface of the glass substrate and make the surface of the transparent electrode uneven, but the reflection loss still remains at 1.
It can range from 0 to 20%.
またステンレス基板上にアモルファスシリコンより成る
光電変換層をＩｆｔ積し、さらに透明電極及びくし形の
アルミニウム等の金属を堆積して太陽電池を構成するこ
とも既知である。このような太陽電池において、透明導
電膜の厚さを反射防止の効果が最も大きくなるようにし
ても反射］（」失は５〜３０％もある。It is also known to construct a solar cell by depositing a photoelectric conversion layer made of amorphous silicon on a stainless steel substrate, and further depositing a transparent electrode and a comb-shaped metal such as aluminum. In such a solar cell, even if the thickness of the transparent conductive film is set to maximize the antireflection effect, the loss of reflection still remains as much as 5 to 30%.
（発明が解決しようとする問題点）
上述したように基板表面での反射による損失を軽減する
ために、基板を波形とし、成る而で反射された光を隣接
する面に再び入射させるように構成することも考えられ
る。このように入射面を波形とするためには、基板も波
形とする必要があるが、このように波形の基板に太陽電
池を膜堆積技術やホトマスク技術を用いて形成すること
は実際上きわめて困難である。(Problems to be Solved by the Invention) As mentioned above, in order to reduce the loss due to reflection on the substrate surface, the substrate is made into a corrugated shape so that the reflected light enters the adjacent surface again. It is also possible to do so. In order to make the incident surface waveform in this way, it is necessary to make the substrate also waveform, but it is actually extremely difficult to form solar cells on such a corrugated substrate using film deposition technology or photomask technology. It is.
本発明の目的は、上述した欠点を除去し、平坦な基板上
に膜形成技術やホトマスク技術を利用して多数の光電変
換素子を形成することができ、しかも完成した光電変換
装置におい′Ｃは波形の基板とすることにより反射によ
る損失を２〜５％程度まで低減することができ、したが
ってきわめて高い光電変換効率を有する光電変換装置を
簡単かつ安価に製造することができる方法を提供しよう
とするものである。An object of the present invention is to eliminate the above-mentioned drawbacks, to form a large number of photoelectric conversion elements on a flat substrate using film forming technology and photomask technology, and to have a completed photoelectric conversion device with no odor of 'C. By using a corrugated substrate, loss due to reflection can be reduced to about 2 to 5%, and therefore a method is provided that can easily and inexpensively manufacture a photoelectric conversion device having extremely high photoelectric conversion efficiency. It is something.
（問題点を解決するための手段）
本発明は光電変換装置を製造するに当たり、変形可能な
材料より成る基板上に電極、光電変換層および電極を順
次に堆積して複数の光電変換素子を形成した後、各光電
変換素子からの反射光を、近傍の光電変換素子に入射さ
せるような形状に前記基板を折り曲げることを特徴とす
゛るものである。(Means for Solving the Problems) In manufacturing a photoelectric conversion device, the present invention forms a plurality of photoelectric conversion elements by sequentially depositing an electrode, a photoelectric conversion layer, and an electrode on a substrate made of a deformable material. After that, the substrate is bent into a shape such that the reflected light from each photoelectric conversion element is incident on a nearby photoelectric conversion element.
（作用）
上述した本弁明の製造方法によれば光″市変換素子を形
成する工程までは基板を平坦なものとしておくので、従
来の膜形成技術やフォトマスク技術をそのまま利用プる
ことができる。一方、多数の光電変換素子を形成した後
、基板を波形に折り曲げるので、成る基板表面で反射さ
れた光は隣接する基板表面に入射するようになり、反射
による損失を２〜５％とすることができる。(Function) According to the manufacturing method of the present invention described above, the substrate is kept flat until the process of forming the photonic city conversion element, so conventional film forming technology and photomask technology can be used as is. On the other hand, since the substrate is bent into a waveform after forming a large number of photoelectric conversion elements, the light reflected on the surface of the substrate becomes incident on the surface of the adjacent substrate, reducing the loss due to reflection to 2 to 5%. be able to.
（実施例） 第１図は本発明による光電変換装置の製造方法。(Example) FIG. 1 shows a method for manufacturing a photoelectric conversion device according to the present invention.
の一実施例の順次の製造工程を示すものであり、第１図
Ａに示すように厚さ０，１〜０．５ｍｍのステンレス板
１を準備し、その表面にはほぼ長方形の絶縁パターン２
を被着する。この絶縁パターン２は、２００℃以上の高
温に耐える耐熱性絶縁材料、例えばポリイミド樹脂膜を
以って構成する。This shows the sequential manufacturing process of one embodiment. As shown in FIG.
be coated with. The insulating pattern 2 is made of a heat-resistant insulating material that can withstand high temperatures of 200° C. or higher, such as a polyimide resin film.
次に第１図Ｂに示すように、メタルマスクを用いて通常
のＲＦグロー放電分解法により、ステンレス１上にｎ型
アモルファス・シリコンＭ３ａ 。Next, as shown in FIG. 1B, n-type amorphous silicon M3a was deposited on the stainless steel 1 by using a metal mask and a normal RF glow discharge decomposition method.
１型アモルファス・シリコン層３ｂおよびｎ型アモルフ
ァス・シリコン層３Ｇをそれぞれ１００人。100 people each for the 1-type amorphous silicon layer 3b and the n-type amorphous silicon layer 3G.
５０００人および１００人の厚さに順次に成膜する。Films are sequentially formed to a thickness of 5,000 and 100.
次に第１図Ｃに示すように、例えばＩＴＯ膜より成る入
射側の透明電ＮＡ４を、アモルファス・シリコン層３Ｃ
上に真空蒸着して多数の光電変換素子５を構成する。Next, as shown in FIG.
A large number of photoelectric conversion elements 5 are formed by vacuum evaporation thereon.
次に第１図りに示すように隣接する光電変換素子５の透
明電ｆｆ１５を相互接続するアルミニウム電ＶＪ６を真
空蒸着により形成する。Next, as shown in the first diagram, an aluminum conductor VJ6 interconnecting the transparent conductors ff15 of adjacent photoelectric conversion elements 5 is formed by vacuum evaporation.
最後に第１図Ｅに示すように隣接する光電変換索子５の
間のギャップ７を冶具により固定し、この部分を境とし
て基板１を折り曲げ、波形とする。Finally, as shown in FIG. 1E, the gap 7 between adjacent photoelectric conversion cables 5 is fixed using a jig, and the substrate 1 is bent at this portion as a boundary to form a waveform.
この場合、光電変換素子表面の折り曲げ角度θは４５°
以上、好ましくは６０〜７５°とする。In this case, the bending angle θ of the photoelectric conversion element surface is 45°
Above, preferably 60 to 75 degrees.
上述したようにして製造した太陽電池においては、成る
光電変換素子に入射した光の一部はここで反射されるが
、この反射光は隣接する光電変換素子に入射するととも
にこの光電変換素子で反射された光は再び元の光電変換
素子に入射する。このように、入射光は多重反射されな
がら光電変換作用に寄与することになり、反射による光
の損失を、２〜５％程度ときわめて小さくすることがで
きる。In the solar cell manufactured as described above, a part of the light incident on the photoelectric conversion element is reflected, but this reflected light is incident on the adjacent photoelectric conversion element and is reflected by this photoelectric conversion element. The emitted light enters the original photoelectric conversion element again. In this way, the incident light contributes to the photoelectric conversion effect while undergoing multiple reflections, and the loss of light due to reflection can be extremely reduced to about 2 to 5%.
第２図は従来の太陽電池と本発明による太陽電池との分
光反射特性を示すグラフであり、曲線Ａは従来のガラス
基板を用いた平面形状のアモルファス・シリコン太陽電
池の反射率を示し、１０〜２０％程度の反射率がある。FIG. 2 is a graph showing the spectral reflection characteristics of a conventional solar cell and a solar cell according to the present invention. Curve A shows the reflectance of a planar amorphous silicon solar cell using a conventional glass substrate. It has a reflectance of about 20%.
また曲！ｉＱＢはステンレス基板を用いたアモルファス
・シリコン太陽電池で、表面に反射防止膜を兼ねた透明
導電膜コートを施“したものの反射率を示すものであり
、反射防止コートの作用のため反射率は低下しているが
、依然として５〜３０％程度の反射率を有している。曲
線Ｃは本発明による太陽電池の反射率を示し、全波長域
に亘って反射率は２〜５％ときわめて小さくなっている
。Another song! iQB is an amorphous silicon solar cell using a stainless steel substrate, and is coated with a transparent conductive film that also serves as an anti-reflection film on the surface. However, it still has a reflectance of about 5 to 30%.Curve C shows the reflectance of the solar cell according to the present invention, and the reflectance is extremely small at 2 to 5% over the entire wavelength range. It has become.
第３図は従来の太陽電池の電流電圧特性曲線へと、本発
明による太陽電池の電流電圧特性曲線Ｂとを示ケもので
あり、本発明によると、ＡＭ（エア・マス）１．５の照
射条件で短絡電流Ｊ が１７Ｃ
ｍＡ／ｃｄから１９ｍ Ａ ／ ｃＪに増大し、変換効
率も１０％から１１％に増加している。FIG. 3 shows the current-voltage characteristic curve B of the solar cell according to the present invention as well as the current-voltage characteristic curve B of the conventional solar cell. Under the irradiation conditions, the short-circuit current J increases from 17 C mA/cd to 19 mA/cJ, and the conversion efficiency also increases from 10% to 11%.
本発明は上述した実施例にのみ限定されるものではなく
、幾多の変形を加えることができる。例えば上述した実
施例（よアモルファス・シリコン太陽電池としたが、他
の半導体材料を用いる太陽電池としたり、太陽電池以外
の光電変換装置とすることもできる。また、基板の材料
はステンレスに限られるものではなく、アルミ板、ポリ
イミド系樹脂板などの塑性変形し得る材料で構成するこ
ともできる。The present invention is not limited to the embodiments described above, but can be modified in many ways. For example, although the above embodiment uses an amorphous silicon solar cell, it is also possible to use a solar cell using other semiconductor materials or a photoelectric conversion device other than solar cells.Also, the material of the substrate is limited to stainless steel. Instead, it can be made of a material that can be plastically deformed, such as an aluminum plate or a polyimide resin plate.
（発明の効果）
上述したように本発明の光電変換装置の製造方法によれ
ば平坦な基板上に光電変換素子を形成した後、基板を折
り曲げて波形の入射面を有する光電変換装置を形成する
ため、光電変換素子の形成に【よ既存の技術をそのまま
利用することができ、特に新しい技術を開発する必要が
なく、容易かつ支価に実施することができる。また、本
発明の方法によって製造された光電変換装置は反射によ
る損失が２〜５％ときわめて小さく、大きな短絡電流が
得られるとともに高い光電変換効率が（；１られる。(Effects of the Invention) As described above, according to the method for manufacturing a photoelectric conversion device of the present invention, a photoelectric conversion device is formed on a flat substrate, and then the substrate is bent to form a photoelectric conversion device having a corrugated entrance surface. Therefore, existing technology can be used as is to form the photoelectric conversion element, and there is no need to develop any new technology, and it can be implemented easily and inexpensively. Further, the photoelectric conversion device manufactured by the method of the present invention has extremely small loss due to reflection of 2 to 5%, can obtain a large short circuit current, and has a high photoelectric conversion efficiency (;1).
第１図Ａ−Ｆは本発明による光電変換装置の製造方法の
一実施例の順次の工程を示ず図、第２図は本発明の方法
により製造した太陽電池と従来の太陽電池の分光反射率
特性を示すグラフ、第３図は本発明の方法により製造し
た太陽電池と従来の太陽電池の電′ａ電圧特性を示づグ
ラフである。
１・・・ステンレス基板 ２・・・絶縁パターン３ａ
、 ３ｂ、 ３ｃ・・・アモルファス・シリコン層４・
・・透明導電膜 ５・・・光電変換素子６・・・
アルミニウム電極
第１図Figures 1A-F are diagrams that do not show the sequential steps of an embodiment of the method for manufacturing a photoelectric conversion device according to the present invention, and Figure 2 is a diagram showing the spectral reflections of a solar cell manufactured by the method of the present invention and a conventional solar cell. FIG. 3 is a graph showing the voltage characteristics of a solar cell manufactured by the method of the present invention and a conventional solar cell. 1... Stainless steel substrate 2... Insulating pattern 3a
, 3b, 3c...Amorphous silicon layer 4.
...Transparent conductive film 5...Photoelectric conversion element 6...
Aluminum electrode diagram 1
Claims (1)
および電極を順次に堆積して複数の光電変換素子を形成
した後、各光電変換素子からの反射光を、近傍の光電変
換素子に入射させるような形状に前記基板を折り曲げる
ことを特徴とする光電変換装置の製造方法。1. After forming a plurality of photoelectric conversion elements by sequentially depositing an electrode, a photoelectric conversion layer, and an electrode on a substrate made of a deformable material, the reflected light from each photoelectric conversion element is transmitted to a nearby photoelectric conversion element. A method of manufacturing a photoelectric conversion device, comprising bending the substrate into a shape that allows light to enter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278013A JPS62137873A (en) | 1985-12-12 | 1985-12-12 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278013A JPS62137873A (en) | 1985-12-12 | 1985-12-12 | Manufacture of photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62137873A true JPS62137873A (en) | 1987-06-20 |
Family
ID=17591419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60278013A Pending JPS62137873A (en) | 1985-12-12 | 1985-12-12 | Manufacture of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62137873A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6430858U (en) * | 1987-08-20 | 1989-02-27 | ||
| EP0641487A1 (en) * | 1992-05-21 | 1995-03-08 | United Solar Systems Corporation | Monolithic, parallel connected photovoltaic array and method for its manufacture |
| JP2010272787A (en) * | 2009-05-25 | 2010-12-02 | Seiko Epson Corp | Solar cell panel, solar cell unit, and solar cell unit aggregate |
| JP2016015402A (en) * | 2014-07-02 | 2016-01-28 | 輝雄 早津 | Solar cell module and photovoltaic power generation system |
-
1985
- 1985-12-12 JP JP60278013A patent/JPS62137873A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6430858U (en) * | 1987-08-20 | 1989-02-27 | ||
| EP0641487A1 (en) * | 1992-05-21 | 1995-03-08 | United Solar Systems Corporation | Monolithic, parallel connected photovoltaic array and method for its manufacture |
| EP0641487A4 (en) * | 1992-05-21 | 1997-01-22 | United Solar Systems Corp | Monolithic, parallel connected photovoltaic array and method for its manufacture. |
| JP2010272787A (en) * | 2009-05-25 | 2010-12-02 | Seiko Epson Corp | Solar cell panel, solar cell unit, and solar cell unit aggregate |
| JP2016015402A (en) * | 2014-07-02 | 2016-01-28 | 輝雄 早津 | Solar cell module and photovoltaic power generation system |
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