JPS62136835A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPS62136835A
JPS62136835A JP60278646A JP27864685A JPS62136835A JP S62136835 A JPS62136835 A JP S62136835A JP 60278646 A JP60278646 A JP 60278646A JP 27864685 A JP27864685 A JP 27864685A JP S62136835 A JPS62136835 A JP S62136835A
Authority
JP
Japan
Prior art keywords
ball
wire
electrode
gas atmosphere
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60278646A
Other languages
English (en)
Inventor
Kazumichi Machida
一道 町田
Saneyasu Hirota
弘田　実保
Masaaki Shimotomai
下斗米　将昭
Seizo Omae
大前　誠蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60278646A priority Critical patent/JPS62136835A/ja
Publication of JPS62136835A publication Critical patent/JPS62136835A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にＩＣや
トランジスタなどの製造工程において、金属ワイヤを接
続するワイヤボンディング方法に関するものである。
〔従来の技術〕
第４図は従来のワイヤボンディング方法を検式的に示し
たものである。図において、１は金ワイヤ、２は半導体
チップ、３は半導体チップ２上に形成されたアルミ電極
、４は銀めっき等の表面処理が施された銅合金リード、
５はボンディングツールであるキャピラリチップである
。
従来のワイヤボンディング方法では、金ワイヤ１の先端
をアーク入熱で溶融させ、これを凝固させてボール部１
ａを形成し、このボール部１ａをアルミ電極３にボール
ボンディングした後（第４図（ａ）、　（ｂ）参照）、
金ワイヤ１の他端側をリード４にステッチボンディング
するようにしており（第４図（Ｃ）、　＋ｄ）参照）、
又ワイヤ１の接合には主として超音波併用熱圧着方式が
用いられている。
以上のように従来のこの種の半導体装置においては、ボ
ンディング用金属ワイヤとして金ワイヤが使用されてい
るが、この場合コストが高（つくことと、半導体チップ
２上のアルミ電極３との接合部の長期信頼性が低いとい
う欠点があるため、金に代わる材料及びそのボンディン
グ技術が種々検討されている。
〔発明が解決しようとする問題点〕
ここで材料原価低減及び素子の長期信転性向上という観
点から、金属ワイヤを金から銅に代える場合について考
える。金属ワイヤを電極にボンディングする場合、良好
な接合状態を得るためには金属ワイヤの硬さと電極の硬
さとが近位しているのが望ましい。従来の金ワイヤを用
いる場合には半導体チップのアルミ電極の硬さはビッカ
ース硬さでＨｖ３５〜４０であるが、一般の銅ワイヤの
硬さはビッカース硬さでＨｖ４５以上であり、従って一
船の銅ワイヤをそのまま従来のアルミ電極に接合しよう
とするとボンディング性が悪いという問題が生じ、この
問題を解消するため超音波出力を、例えば振幅０．２〜
０．３μｍ程度に増大させると、第５図に示されるよう
に、アルミ電極３ａが接合部周囲に排斥されて銅ワイヤ
１０のボール１０ａが半導体チップ２に当り、電極３及
び半導体チップ２が損傷を受けるおそれがある。
この発明は、以上のような問題点を鑑み、電極及び半導
体チップが損傷を受けることなく、金属ワイヤと電極と
を良好に接合できる半導体装置の製造方法を提供するこ
とを目的としている。
ところで超音波併用熱圧着ボンディングにおける接合性
について見ると、良好な接合状態を得るためには、材料
表面の酸化皮膜等の吸着物を十分に破壊、除去すること
、及び接合界面における材料の塑性変形により、酸化膜
破壊後の新生面同志の接触面積を拡大することが極めて
重要である。
ここで金属ワイヤの表面酸化について見ると、金表面は
酸化されにくいのに対し、銅、アルミニウム等はその表
面が酸化されやすいという性質を有し、そのため従来の
金板外の金属ワイヤを用いる場合は、ポール形成につい
てはこれを不活性ガス雰囲気で行なっていたが、ボール
ボンディングについてはこれを大気中で行なうのが一般
的であった。従ってこのような従来のワイヤボンディン
グ方法によって銅ワイヤのボンディングを行なうように
すると、ボール−表面が酸化され、又同時にアルミ電極
表面の酸化も進行し、ワイヤと電極の硬さの違いに加え
、この酸化膜が原因になって良好なボンディング性が得
られず、上述のように大きな超音波出力が必要であった
訳である。
〔問題点を解決するための手段〕
そこでこの発明は、半導体チップ上の電極とリードとを
金属ワイヤを用いて結線する半導体装置の製造方法にお
いて、金属ワイヤのボール形成及びポールボンディング
を不活性ガス雰囲気中で行なうようにしたものである。
〔作用〕
この発明においては、不活性ガス雰囲気中でボール形成
及びポールボンディングを行なうようにしたことから、
ボール及び電極の表面酸化が防止され、低い超音波出力
でもってボールが半導体チップの電極に良好にボンディ
ングされるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図ないし第３図は本発明の一実施例による半導体装
置の製造方法を示す。図において、第４図及び第５図と
同一符号は同図と同一のものを示し、１０は銅ワイヤ、
１０ａはボール、１１は放電電極、１２はシールドカバ
ー、１３は不活性ガス雰囲気、１４はアークである。
本実施例の方法では、まずシールドカバー１２内にアル
ゴンガスを送給してシールドカバー１２内に不活性ガス
雰囲気１３を形成し、この不活性ガス雰囲気１３中で銅
ワイヤ１０と放電電極１１との間に高電圧を印加する。
すると銅ワイヤ１０と放電電極１１との間に放電が起こ
ってアーク１４が形成され、銅ワイヤ１０の先端に熱が
投与されてボール１０ａが形成される。
こうしてボール１０ａが形成されると、上記不活性ガス
雰囲気１３中で、キャピラリチップ５を用いてボール１
０ａを半導体チップ２のアルミ電極３に押圧し、これに
振幅０．１１１ｍの超音波振動を印加する。するとボー
ル１０ａが変形してボール１０ａとアルミ電極３とが接
合されるので、その後従来と同様に銅ワイヤ１０の他端
をリード４にステッチボンディングする。
以上のような本実施例の方法では、ボール形成及びポー
ルボンディングを不活性ガス雰囲気中で行なうようにし
たので、ボール及びアルミ電極表面の酸化を防止でき、
超音波出力として従来０．２〜０．３μｍ程度の振幅が
必要であったのが、０．１μｍ程度の振幅で良く、その
結果電極及び半導体チップが損傷を受けることなく、銅
のワイヤを良好にアルミ電極に接合でき、これにより現
在ワイヤボンディングに用いられている金ワイヤに代え
て低度な銅ワイヤの使用が可能となり、大幅な材料原価
低減が実現できるとともに、ワイヤと電極との接合部の
長期信幀性を向上できる。
なお上記実施例では金属ワイヤとして銅ワイヤを用いた
場合について説明したが、この金属ワイヤの材料はパラ
ジウム、アルミニウム、銀あるいはこれらの低元素添加
合金、又は低元素添加銅合金であってもよい。
〔発明の効果〕
以上のように本発明によれば、半導体チップ上の電極と
リードとを金属ワイヤを用いて結線する半導体装置の製
造方法において、金属ワイヤのボール形成及びボールボ
ンディングを不活性ガス雰囲気中で行なうようにしたの
で、電極及び半導体チップが損傷を受けることなく、金
属ワイヤと電極とを良好に接合でき、金ワイヤに代えて
低度な金属ワイヤの使用が可能になるという効果がある
。
【図面の簡単な説明】
第１図ないし第３図は本発明の一実施例による半導体装
置の製造方法を模式的に示す図で、第１図（ａ）、　（
ｂ）は各々アーク放電時及びボール形成後の状態を示す
図、第２図はボールボンディング途中の状態を示す図、
第３図はボールボンディング後の状態を示す図、第４図
（ａ）〜（ｄ）は各々従来の方法を示す模式図、第５図
は発明が解決しようとする問題点を説明するための図で
ある。 ２・・・半導体チップ、３・・・電極、４・・・リード
、１０・・・銅ワイヤ（金属ワイヤ）、ｌＯａ・・・ボ
ール、１３・・・不活性ガス雰囲気。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. （１）半導体チップ上の電極とリードとを金属ワイヤを
    用いて結線する半導体装置の製造方法において、 不活性ガス雰囲気中で、金属ワイヤの先端にボールを形
    成するとともに該ボールを半導体チップ上の電極にボン
    ディングすることを特徴とする半導体装置の製造方法。
JP60278646A 1985-12-10 1985-12-10 半導体装置の製造方法 Pending JPS62136835A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278646A JPS62136835A (ja) 1985-12-10 1985-12-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278646A JPS62136835A (ja) 1985-12-10 1985-12-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS62136835A true JPS62136835A (ja) 1987-06-19

Family

ID=17600178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278646A Pending JPS62136835A (ja) 1985-12-10 1985-12-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62136835A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
JP2007294975A (ja) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc ワイヤーボンディング用の酸化減少システム
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP2012504317A (ja) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． ワイヤーボンディング作業における酸化軽減のためのガス配送システム
CN102554526A (zh) * 2012-01-18 2012-07-11 福建福顺半导体制造有限公司 一种半导体器件铜线焊接铜球保护方法及其保护装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395037A (en) * 1992-04-22 1995-03-07 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
JP2007294975A (ja) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc ワイヤーボンディング用の酸化減少システム
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP2012504317A (ja) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． ワイヤーボンディング作業における酸化軽減のためのガス配送システム
CN102554526A (zh) * 2012-01-18 2012-07-11 福建福顺半导体制造有限公司 一种半导体器件铜线焊接铜球保护方法及其保护装置

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