JPS62136059A - Lead frame for resin sealed semiconductor device - Google Patents

Lead frame for resin sealed semiconductor device

Info

Publication number
JPS62136059A
JPS62136059A JP60277295A JP27729585A JPS62136059A JP S62136059 A JPS62136059 A JP S62136059A JP 60277295 A JP60277295 A JP 60277295A JP 27729585 A JP27729585 A JP 27729585A JP S62136059 A JPS62136059 A JP S62136059A
Authority
JP
Japan
Prior art keywords
copper
semiconductor element
lead frame
system alloy
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60277295A
Other languages
Japanese (ja)
Inventor
Isamu Yamamoto
勇 山本
Seiji Takemura
竹村　誠次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60277295A priority Critical patent/JPS62136059A/en
Priority to KR1019860008835A priority patent/KR900002884B1/en
Publication of JPS62136059A publication Critical patent/JPS62136059A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To avoid warping and temperature rise of a semiconductor element by a method wherein iron system alloy, whose thermal expansion coefficient is close to that of silicon, is employed as the material of an island part and copper or copper system alloy is employed as the material of other parts. CONSTITUTION:Iron system alloy, whose thermal expansion coefficient is close to that of silicon, i.e. the material of a semiconductor element, is employed as the material of an island part 13 and copper or copper system alloy is employed as the material of the parts other than the island part 13, i.e. outer leads 12, tie-bars 14, inner leads 15 and frame parts 16. With this constitution, a semiconductor element bonded to the island part 13 is hardly warped and the heat created by the semiconductor element is discharged outside through the copper or copper system alloy so that temperature rise of the semiconductor element can be suppressed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は樹脂封止半導体装置用のリードフレームに関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a lead frame for a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

従来の樹脂封止半導体装置には第２図に示すリードフレ
ームが使用されていた。図において、１はリードフレー
ム、２はアウターリード、３はアイランド部、４は封止
用樹脂が外部へ漏れるのを防ぐためのタイバー、５はイ
ンナーリード、６は枠部である。A lead frame shown in FIG. 2 has been used in a conventional resin-sealed semiconductor device. In the figure, 1 is a lead frame, 2 is an outer lead, 3 is an island portion, 4 is a tie bar for preventing sealing resin from leaking to the outside, 5 is an inner lead, and 6 is a frame portion.

リードフレームｌの樹脂封止は、第３図のように、アイ
ランド部３に半導体素子７を接着し、その電極とインナ
ーリード５を金線８で接続してから行なっている。第４
図はこのようにして樹脂封止されたリードフレームｌを
示す。９は硬化した封止用樹脂である。The resin sealing of the lead frame 1 is performed after bonding the semiconductor element 7 to the island portion 3 and connecting its electrodes and inner leads 5 with gold wires 8, as shown in FIG. Fourth
The figure shows a lead frame l sealed with resin in this manner. 9 is a cured sealing resin.

上記リードフレームｌは、一般に鉄系の合金または銅系
の合金の単一材料で造られているが、高品質を要求され
るものは膨張係数が半導体素子の材料であるシリコンの
それに近い鉄・ニッケル系の合金が使用され、高熱伝導
と低コストを要求されるものは、銅系の合金が使用され
ている。The above-mentioned lead frame l is generally made of a single material such as an iron-based alloy or a copper-based alloy, but those requiring high quality are made of iron, whose expansion coefficient is close to that of silicon, which is the material of semiconductor elements. Nickel-based alloys are used, and copper-based alloys are used for those that require high thermal conductivity and low cost.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このうち、高熱伝導を要求されるリードフレームは、銅
系合金で造られているため、半導体素子の発する熱を放
出してその温度上昇を抑えるにはよいが、半導体素子の
材料であるシリコンとり−ドフレームの材料である銅系
合金の熱膨張係数が異なるため、アイランド部３に接着
した半導体素子に反りが発生するという問題があった。Among these, lead frames, which require high thermal conductivity, are made of copper-based alloys, which are good for dissipating heat generated by semiconductor elements and suppressing temperature rises, but since they are made of copper-based alloys, they are good for dissipating heat generated by semiconductor elements and suppressing temperature rises. - Since the coefficients of thermal expansion of the copper-based alloy that is the material of the frame are different, there is a problem in that the semiconductor element bonded to the island portion 3 is warped.

特に、高集積化に伴って半導体素子の面積が犬きくなっ
てくると反りの発生はより顕著になった。In particular, the occurrence of warpage has become more noticeable as the area of semiconductor elements has become smaller with higher integration.

この発明は、このような従来のものの問題点を解決する
ためになされたもので、半導体素子の反りと温度上昇を
防止できる樹脂封止半導体装置用リードフレームを得る
ことを目的とする。The present invention was made to solve the problems of the conventional products, and aims to provide a lead frame for a resin-sealed semiconductor device that can prevent warping of semiconductor elements and temperature rise.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るリードフレームは、アイランド部に熱膨
張係数がシリコンのそれに近い鉄系の合金を、アイラン
ド部以外の部分に銅ま７’（は銅系の合金をそれぞれ用
いたものである〇 〔作用〕 アイランド部を形成する鉄系の合金の熱膨張係数が、半
導体素子の材料であるシリコンのそれに近いから、アイ
ランド部に接着した半導体素子の反りは殆んど発生しな
い。一方、アイランド部以外の部分は高熱′Ｊ１４性を
有する銅または銅系の合金で造られているから、半導体
素子が発する熱はこの部分を伝わって外気へ放出され、
半導体素子の温度上昇が抑えられる。The lead frame according to the present invention uses an iron-based alloy whose coefficient of thermal expansion is close to that of silicon for the island portion, and a copper-based alloy for the portion other than the island portion. Effect] Since the coefficient of thermal expansion of the iron-based alloy forming the island portion is close to that of silicon, which is the material of the semiconductor element, warping of the semiconductor element bonded to the island portion hardly occurs.On the other hand, warping of the semiconductor element bonded to the island portion hardly occurs. The part is made of copper or a copper-based alloy that has high heat properties, so the heat generated by the semiconductor element is transmitted through this part and released to the outside air.
Temperature rise of semiconductor elements can be suppressed.

〔発明の実施例〕[Embodiments of the invention]

第１図はこの発明の実施例を示す。同図はその斜視図で
ある。FIG. 1 shows an embodiment of the invention. The figure is a perspective view thereof.

図において、１１はリードフレーム、１２はアウターリ
ード、１３はアイランド部、１４はタイバー、１５はイ
ンナーリード、１６は枠部である。In the figure, 11 is a lead frame, 12 is an outer lead, 13 is an island portion, 14 is a tie bar, 15 is an inner lead, and 16 is a frame portion.

上記各構成部分のうち、アイランド部Ｉ３には、熱膨張
係数が半導体素子の材料であるシリコンのそれに近い鉄
系の合金が使用してあり、アイランド部１３以外の部分
、すなわち、アクタ−リードＩ２、タイバー１４、イン
ナーリード１５および枠部１６には、鋼または銅系の合
金が使用芒れている。こ＼にいう鉄系の合金は、例えば
、４２アロイ（４２％Ｎり、５０アロイ（５０％Ｎｉ）
等である。Among the above constituent parts, the island part I3 is made of an iron-based alloy whose thermal expansion coefficient is close to that of silicon, which is the material of the semiconductor element, and the part other than the island part 13, that is, the actor lead I2 , the tie bar 14, the inner lead 15, and the frame 16 are made of steel or a copper alloy. The iron-based alloy mentioned here is, for example, 42 alloy (42% Ni), 50 alloy (50% Ni).
etc.

アイランド部ｉ３は、その他の部分と材料が異なるので
、枠部１６からアイランド部１３へ伸びた支持部１１に
接続しである。番８はその接続部である。Since the island part i3 is made of a different material from the other parts, it is connected to the support part 11 extending from the frame part 16 to the island part 13. Number 8 is the connection part.

この実施例では、アイランド部に半導体素子の材料であ
るシリコンと、熱膨張係数の近い鉄系合金を用いたから
、アイランド部に接着した半導体素子に反りが生ずるこ
とは殆んどなくなる。また、アクタ−リード１２、タイ
バー１４、インナーリード１５および枠部■６に銅また
は銅系の合金を用いたから、半導体素子が発する熱は、
これらを伝わって外部に放出され、したがって、半導体
素子の温度上昇が抑制される。In this embodiment, since silicon, which is the material of the semiconductor element, and an iron alloy having a coefficient of thermal expansion similar to that of silicon, which is the material of the semiconductor element, are used for the island part, warping of the semiconductor element bonded to the island part is almost eliminated. In addition, since copper or a copper-based alloy is used for the actor lead 12, tie bar 14, inner lead 15, and frame part 6, the heat generated by the semiconductor element can be reduced.
It is transmitted through these and emitted to the outside, thus suppressing the temperature rise of the semiconductor element.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、アイランド部に鉄系
の合金、その他の部分に銅または銅系の合金を使用した
から、半導体素子の反りと温度上昇を防止できる。As described above, according to the present invention, since an iron-based alloy is used for the island portion and copper or a copper-based alloy is used for the other portions, it is possible to prevent warpage and temperature rise of the semiconductor element.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、この発明の実施例によるリードフレームを示
す斜視図、第２図は従来のリードフレームを示す斜視図
、第３図は従来のリードフレームに半導体素子を装着し
た状態を示す斜視図、第４図は、第３図で示したリード
フレームに樹脂封止した状態を示すｆ＋祝図である。 図中、１１はリードフレーム、Ｉ２はアウターリード、
１３はアイランド部、１４はタイバー、１５はインナー
リード、１６は枠部・　１８は接続部である。 なお、図中、同符号は同一または相当部分を示す。FIG. 1 is a perspective view showing a lead frame according to an embodiment of the present invention, FIG. 2 is a perspective view showing a conventional lead frame, and FIG. 3 is a perspective view showing a state in which a semiconductor element is mounted on a conventional lead frame. , FIG. 4 is an f+ diagram showing a state in which the lead frame shown in FIG. 3 is sealed with resin. In the figure, 11 is a lead frame, I2 is an outer lead,
13 is an island part, 14 is a tie bar, 15 is an inner lead, 16 is a frame part, and 18 is a connection part. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.

Claims (2)

【特許請求の範囲】[Claims] （１）アイランド部に熱膨張係数がシリコンのそれに近
い鉄系の合金を、アイランド部以外の部分に銅または銅
系の合金をそれぞれ用いたことを特徴とする樹脂封止半
導体装置用リードフレーム。(1) A lead frame for a resin-sealed semiconductor device, characterized in that an iron-based alloy whose coefficient of thermal expansion is close to that of silicon is used for the island portion, and copper or a copper-based alloy is used for the portion other than the island portion. （２）鉄系の合金は、４２アロイ（４２％Ｎｉ）、５０
アロイ（５０％Ｎｉ）であることを特徴とする特許請求
の範囲第１項記載の樹脂封止半導体装置用リードフレー
ム。(2) Iron-based alloys include 42 alloy (42% Ni), 50
The lead frame for a resin-sealed semiconductor device according to claim 1, wherein the lead frame is made of alloy (50% Ni).
JP60277295A 1985-12-09 1985-12-09 Lead frame for resin sealed semiconductor device Pending JPS62136059A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60277295A JPS62136059A (en) 1985-12-09 1985-12-09 Lead frame for resin sealed semiconductor device
KR1019860008835A KR900002884B1 (en) 1985-12-09 1986-10-22 Leadframe for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60277295A JPS62136059A (en) 1985-12-09 1985-12-09 Lead frame for resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS62136059A true JPS62136059A (en) 1987-06-19

Family

ID=17581543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60277295A Pending JPS62136059A (en) 1985-12-09 1985-12-09 Lead frame for resin sealed semiconductor device

Country Status (2)

Country Link
JP (1) JPS62136059A (en)
KR (1) KR900002884B1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441146U (en) * 1987-09-08 1989-03-13
JPH02235365A (en) * 1989-03-08 1990-09-18 Mitsubishi Electric Corp Lead frame for semiconductor device
US5681663A (en) * 1995-06-09 1997-10-28 Ford Motor Company Heatspreader carrier strip
EP0987758A3 (en) * 1991-12-27 2000-05-24 Fujitsu Limited Semiconducter device and method of producing the same
WO2008093586A1 (en) * 2007-01-30 2008-08-07 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
JP2020094933A (en) * 2018-12-13 2020-06-18 日立オートモティブシステムズ株式会社 Thermal flowmeter

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441146U (en) * 1987-09-08 1989-03-13
JPH02235365A (en) * 1989-03-08 1990-09-18 Mitsubishi Electric Corp Lead frame for semiconductor device
EP0987758A3 (en) * 1991-12-27 2000-05-24 Fujitsu Limited Semiconducter device and method of producing the same
US5681663A (en) * 1995-06-09 1997-10-28 Ford Motor Company Heatspreader carrier strip
WO2008093586A1 (en) * 2007-01-30 2008-08-07 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
JP2008187009A (en) * 2007-01-30 2008-08-14 Rohm Co Ltd Resin sealed semiconductor device and its manufacturing method
US8039934B2 (en) 2007-01-30 2011-10-18 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
US8829660B2 (en) 2007-01-30 2014-09-09 Rohm Co., Ltd. Resin-encapsulated semiconductor device
US9287202B2 (en) 2007-01-30 2016-03-15 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
US9502339B2 (en) 2007-01-30 2016-11-22 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
US9991213B2 (en) 2007-01-30 2018-06-05 Rohm Co., Ltd. Resin-encapsulated semiconductor device and its manufacturing method
JP2020094933A (en) * 2018-12-13 2020-06-18 日立オートモティブシステムズ株式会社 Thermal flowmeter

Also Published As

Publication number Publication date
KR900002884B1 (en) 1990-05-01
KR870006648A (en) 1987-07-13

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