JPS62134924A - Holder for substrate heating - Google Patents
Holder for substrate heatingInfo
- Publication number
- JPS62134924A JPS62134924A JP27521085A JP27521085A JPS62134924A JP S62134924 A JPS62134924 A JP S62134924A JP 27521085 A JP27521085 A JP 27521085A JP 27521085 A JP27521085 A JP 27521085A JP S62134924 A JPS62134924 A JP S62134924A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pbn
- gaas substrate
- gaas
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、基板加熱ホルダに於いて、基板をボロン・ナ
イトライドからなるリングで挟持するようにし、また、
基板の裏面にボロン・ナイトライドからなる均熱板を配
設することに依り、Ｉｎソルダなどを用いずに、基板を
損傷することなく保持できるようにし、且つ、均一に加
熱できるようにしたものである。[Detailed Description of the Invention] [Summary] The present invention provides a substrate heating holder in which a substrate is held between rings made of boron nitride, and
By arranging a heat equalizing plate made of boron nitride on the back side of the board, it is possible to hold the board without damaging it without using In solder, etc., and also to heat it uniformly. It is.
本発明は、例えば化合物半導体層を成長させる分子線エ
ピタキシャル成長（ｍｏｌｅｃｕｌａｒｂｅａｍ ｅ
ｐｉｔａｘｙ：ＭＢＥ）装置に用いて好適な基板加熱ホ
ルダに関する。The present invention relates to molecular beam epitaxial growth (molecular beam epitaxial growth) for growing compound semiconductor layers, for example.
The present invention relates to a substrate heating holder suitable for use in a pitaxy (MBE) apparatus.
第３図は従来のＭＢＥ装置に於ける基板加熱ホルダの近
傍を表す要部切断側面図である。FIG. 3 is a cutaway side view of a main part showing the vicinity of a substrate heating holder in a conventional MBE apparatus.
図に於いて、１は高融点金属例えばモリブデンからなる
ブロック、２はヒータ、３は熱電対、４はＧａＡｓ基板
、５はＩｎソルダをそれぞれ示している。In the figure, 1 is a block made of a high melting point metal such as molybdenum, 2 is a heater, 3 is a thermocouple, 4 is a GaAs substrate, and 5 is an In solder.
このように、ＧａＡｓ基板４はＩｎソルダを介してモリ
ブデン・ブロック１に貼付して保持し、且つ、ヒータ２
で加熱するようになっている。In this way, the GaAs substrate 4 is attached and held to the molybdenum block 1 via In solder, and the heater 2
It is designed to be heated.
また、図示していないが、基板の裏面に高融点金属、例
えばＴｉを蒸着し、ヒータから直接加熱することも行わ
れている。Although not shown, a high melting point metal such as Ti is deposited on the back surface of the substrate and directly heated by a heater.
第３図に関して説明した従来技術を採用した場合、Ｉｎ
ソルダ５がＧａＡｓ基板４を浸食し、その裏面が合金化
される為、後のウェハ・プロセスに悪影響を及ぼすので
、裏面研磨を行って除去する必要があり、また、ＧａＡ
ｓ基板４をモリブデン・ブロック１に貼付する工程は煩
雑である。When the prior art explained with reference to FIG. 3 is adopted, In
The solder 5 corrodes the GaAs substrate 4 and the back surface is alloyed, which has an adverse effect on the subsequent wafer process, so it is necessary to remove the back surface by polishing the GaAs substrate 4.
The process of attaching the s-substrate 4 to the molybdenum block 1 is complicated.
また、基板の裏面に高融点金属を蒸着する方法は、その
工程自体が煩雑であると共に基板表面をも汚染する可能
性が大きい旨の欠点がある。Furthermore, the method of vapor depositing a high melting point metal on the back surface of the substrate has the disadvantage that the process itself is complicated and there is a high possibility of contaminating the surface of the substrate.
本発明は、基板の裏面にソルダや高融点金属を被着させ
ることなく、そのままの状態で真空中に保持し、均一に
加熱することができるようにするものである。The present invention makes it possible to maintain the substrate as it is in vacuum without depositing solder or high-melting point metal on the back surface of the substrate, and to uniformly heat the substrate.
本発明者は、化合物半導体基板を機械的に保持できるよ
うに、また、均一に加熱することができるようにする為
、化合物半導体基板の保持材料について種々検討及び実
験を試みた結果、パイロスティック・ボロン・ナイトラ
イド（焼結された窒化ホロン：ＰＢＮ）が最適の特性を
持つことが判明した。In order to be able to mechanically hold a compound semiconductor substrate and to heat it uniformly, the inventor of the present invention has conducted various studies and experiments on holding materials for compound semiconductor substrates. Boron nitride (sintered holon nitride, PBN) was found to have optimal properties.
即ち、ＰＢＮの特徴は、
＋ｌ） 硬度が小さく、化合物半導体と接触させても
機械的な傷が付き難いこと。That is, the characteristics of PBN are as follows: +l) It has low hardness and is difficult to be mechanically scratched even when brought into contact with compound semiconductors.
（２）層状に成長している材料であるから、面に対して
垂直方向には熱伝導率が低く、水平方向にはそれが高い
こと。(2) Because it is a material grown in layers, its thermal conductivity is low in the direction perpendicular to the surface, but high in the horizontal direction.
である。It is.
そこで、本発明の基板加熱ホルダに於いては、基板（例
えばＧａＡｓ基板４）の周辺部分に於ける表裏に当接さ
れるＰＢＮからなるリング（例えばＰＢＮリング６）と
、前記基板を前記ＰＢＮ製のリングを介して挟持する高
融点金属からなるブロック（例えばモリブデン・ブロッ
ク８）とを備え、更には、前記基板の裏面に配設された
ＰＢＮからなる均熱板（例えばＰＢＮ均熱板７）を備え
ている。Therefore, in the substrate heating holder of the present invention, a ring (for example, a PBN ring 6) made of PBN that is brought into contact with the front and back sides of the peripheral portion of the substrate (for example, the GaAs substrate 4), and a ring made of PBN (for example, the PBN ring 6), A block made of a high-melting point metal (e.g. molybdenum block 8) held between rings of It is equipped with
前記手段を採ることに依り、基板はＩｎソルダなどを用
いることなくＭＢＥ装置に於ける真空中に保持すること
ができ、しかも、基板が損傷されることはなく、また、
その保持した点から熱が伝達されることも少なく、そし
て、基板は全面に亙り均一に加熱される。By adopting the above means, the substrate can be held in a vacuum in the MBE apparatus without using In solder, etc., and the substrate will not be damaged.
Little heat is transferred from the held point, and the substrate is heated uniformly over the entire surface.
第１図は本発明一実施例を表す要部切断側面図であり、
第３図に於いて用いた記号と同記号は同部分を示すか或
いは同じ意味を持つものとする。FIG. 1 is a cutaway side view of essential parts showing one embodiment of the present invention.
The same symbols as those used in FIG. 3 indicate the same parts or have the same meaning.
図に於いて、６はＰＢＮリング、７はＰＢＮ均熱板、８
はモリブデン・ブロックをそれぞれ示している。In the figure, 6 is a PBN ring, 7 is a PBN soaking plate, and 8 is a PBN ring.
indicate molybdenum blocks, respectively.
図示例では、化合物半導体基板として直径約５〔口〕
（２吋）のＧａＡｓ基板４を用い、これを外径５０〔鶴
〕φ、内径４８〔龍〕φのＰ Ｂ Ｎ ＩＪソングで挟
み込み、その裏面には５０（ｍｓ）φのＰＢＮ均熱板７
を配設し、これ等をモリブデン・ブロック８で挟持して
いる。In the illustrated example, the compound semiconductor substrate has a diameter of approximately 5 [holes].
A (2 inch) GaAs substrate 4 is used, which is sandwiched between PBN IJ songs with an outer diameter of 50 [Tsuru] φ and an inner diameter of 48 [Dragon] φ, and a 50 (ms) φ PBN heat soaking plate on the back side. 7
are arranged, and these are sandwiched between molybdenum blocks 8.
この基板加熱ホルダをＭＢＥ装置内に配設し、ＰＢＮ均
熱板７の裏面からヒータ２で加熱することに依り、Ｇａ
Ａｓ基板４の昇温を行った。Ga
The temperature of the As substrate 4 was increased.
第２図は第１図に見られる実施例に於けるＧａＡｓ基板
４の面内温度分布を表す線図である。FIG. 2 is a diagram showing the in-plane temperature distribution of the GaAs substrate 4 in the embodiment shown in FIG.
図では、横軸に基板中心（０）からの距離を、また、縦
軸に基板温度をそれぞれ採っである。In the figure, the horizontal axis represents the distance from the substrate center (0), and the vertical axis represents the substrate temperature.
この面内温度分布は、ＧａＡｓ基板４の表面一部に耐熱
塗料（輻射係数＃１）を塗布し、その表面を放射温度計
（パイロ・メータ）で測定して得たものである。This in-plane temperature distribution was obtained by coating a part of the surface of the GaAs substrate 4 with heat-resistant paint (radiation coefficient #1) and measuring the surface with a radiation thermometer (pyrometer).
図に於ける特性線は、基板温度が６５０（’ｃ）である
場合の５〔■〕 （２吋）ＧａＡｓ基板の面内湯度分布
を表すもので、基板面内約４０Ｃｍｍ）φに於いて、温
度ずれΔＴ≦１０（’Ｃ）の略均−な温度分布が得られ
た。The characteristic line in the figure represents the in-plane hot water temperature distribution of a 5 [■] (2 inch) GaAs substrate when the substrate temperature is 650 ('c). A substantially uniform temperature distribution with a temperature deviation ΔT≦10('C) was obtained.
本実施例に依ると、ＧａＡｓ基板４を、ＰＢＮリングに
依り、柔軟に挟み込むことができる為、温度の上昇或い
は下降に基づ（ＧａＡｓ基板４への熱的・機械的ストレ
スが加わり難く、また、結晶成長中にはＧａＡｓ基板４
を回転させるので、ＧａＡｓ基板４とＰＢＮリング６は
擦れていると思われるが、ＧａＡｓ基板４の周辺部分に
は傷は全く入っていなかった。また、ＧａＡｓ基板４の
裏面も、Ａｓの脱離に依る面荒れは全く発生していなか
った。According to this embodiment, since the GaAs substrate 4 can be flexibly sandwiched between the PBN rings, it is difficult to apply thermal or mechanical stress to the GaAs substrate 4 due to a rise or fall in temperature. , during crystal growth, the GaAs substrate 4
Although the GaAs substrate 4 and the PBN ring 6 are likely to have rubbed due to the rotation, there were no scratches on the periphery of the GaAs substrate 4 at all. Further, on the back surface of the GaAs substrate 4, no surface roughness due to the detachment of As occurred.
本発明に依る基板加熱ホルダでは、基板の周辺部分の表
裏にＰＢＮからなるリングを当接し、その部分を高融点
金属のブロックで挟持するようにしたり、また、前記基
板の裏面にはＰＢＮからなる均熱板を配設した構成を採
っている。In the substrate heating holder according to the present invention, a ring made of PBN is brought into contact with the front and back sides of the peripheral portion of the substrate, and the ring is held between blocks of high melting point metal, and the back side of the substrate is made of PBN. The structure is equipped with a heat equalizing plate.
この構成に依ると、ＰＢＮリングが機械的及び熱的なス
ペーサとなり、Ｉｎソルダを介してブロックに貼付する
などの手段をとらな（でも基板をＭＢＥ装置内の真空中
に保持することができ、しかも、基板に損傷を与えるこ
とがなく、そして、その保持点から熱が伝播して局部的
な温度上昇を生ずることも少ない。そして、ＰＢＮ均熱
板は基板全面を均一に加熱するのに極めて有効に作用す
る。According to this configuration, the PBN ring becomes a mechanical and thermal spacer, and the substrate can be held in the vacuum inside the MBE apparatus without taking measures such as attaching it to the block via In solder. Moreover, it does not damage the substrate, and it is less likely that heat will propagate from the holding point and cause a local temperature rise.The PBN heating plate is extremely effective at uniformly heating the entire surface of the substrate. Works effectively.
第１図は本発明一実施例の要部切断側面図、第２図は基
板面内温度分布を説明する為の線図、第３図は従来例の
要部切断側面図をそれぞれ表している。
図に於いて、２はヒータ、３は熱電対、４は基板、６は
ＰＢＮリング、７はＰＢＮ均熱板、８はモリブデン・ブ
ロックをそれぞれ示している。
特許出願人 富士通株式会社
代理人弁理士 相 谷 昭 司
代理人弁理士 渡 邊 弘 一
実施例の要部切断側面図
第１図
基板温度（０Ｃ）
ユ 媚Fig. 1 is a cutaway side view of the main part of an embodiment of the present invention, Fig. 2 is a diagram for explaining the temperature distribution within the substrate surface, and Fig. 3 is a cutaway side view of the main part of the conventional example. . In the figure, 2 is a heater, 3 is a thermocouple, 4 is a substrate, 6 is a PBN ring, 7 is a PBN heat equalizing plate, and 8 is a molybdenum block. Patent Applicant Fujitsu Ltd. Representative Patent Attorney Akira Aitani Representative Patent Attorney Hiroshi Watanabe Figure 1 Cut-away side view of essential parts of an embodiment Figure 1 Substrate temperature (0C)
Claims (2)
スティック・ボロン・ナイトライドからなるリングと、 前記基板を前記パイロスティック・ボロン・ナイトライ
ド製のリングを介して挟持する高融点金属からなるブロ
ックと を備えてなることを特徴とする基板加熱ホルダ。(1) A ring made of pyrostick boron nitride that is in contact with the front and back sides of the peripheral portion of the substrate, and a high melting point metal that holds the substrate via the ring made of pyrostick boron nitride. A substrate heating holder comprising a block consisting of:
スティック・ボロン・ナイトライドからなるリングと、 前記基板を前記パイロスティック・ボロン・ナイトライ
ド製のリングを介して挟持する高融点金属からなるブロ
ックと、 前記基板の裏面に配設されたパイロスティック・ボロン
・ナイトライドからなる均熱板とを備えてなることを特
徴とする基板加熱ホルダ。(2) A ring made of pyrostick boron nitride that is in contact with the front and back sides of the peripheral portion of the substrate, and a high melting point metal that sandwiches the substrate via the ring made of pyrostick boron nitride. What is claimed is: 1. A substrate heating holder comprising: a block made of the following: and a heat equalizing plate made of pyrostick boron nitride disposed on the back surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27521085A JPS62134924A (en) | 1985-12-09 | 1985-12-09 | Holder for substrate heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27521085A JPS62134924A (en) | 1985-12-09 | 1985-12-09 | Holder for substrate heating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62134924A true JPS62134924A (en) | 1987-06-18 |
| JPH022284B2 JPH022284B2 (en) | 1990-01-17 |
Family
ID=17552226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27521085A Granted JPS62134924A (en) | 1985-12-09 | 1985-12-09 | Holder for substrate heating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62134924A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158193A (en) * | 1985-12-19 | 1987-07-14 | グ−ルド・インコ−ポレイテッド | Holder for compound semiconductor wafer |
| US6159301A (en) * | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
-
1985
- 1985-12-09 JP JP27521085A patent/JPS62134924A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158193A (en) * | 1985-12-19 | 1987-07-14 | グ−ルド・インコ−ポレイテッド | Holder for compound semiconductor wafer |
| JPH0417919B2 (en) * | 1985-12-19 | 1992-03-26 | Gould Inc | |
| US6159301A (en) * | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH022284B2 (en) | 1990-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |