JPS62123093A - Mounting of substrate on molecular beam epitaxial growth apparatus - Google Patents
Mounting of substrate on molecular beam epitaxial growth apparatusInfo
- Publication number
- JPS62123093A JPS62123093A JP26434585A JP26434585A JPS62123093A JP S62123093 A JPS62123093 A JP S62123093A JP 26434585 A JP26434585 A JP 26434585A JP 26434585 A JP26434585 A JP 26434585A JP S62123093 A JPS62123093 A JP S62123093A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial growth
- growth apparatus
- molecular beam
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の千１！用分野）
本発明は、高品質な結晶を得るための分子線エピタキシ
ャル成長装置の基板装着方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field) The present invention relates to a method for mounting a substrate in a molecular beam epitaxial growth apparatus for obtaining high quality crystals.
（従来技術）
高品質薄膜結晶成長法の一つとして、近年、分子線エピ
タキシャル成長法（以下ＭＢＥ法と記す）が注目を集め
ている。従来、このＭＢＥ装誼においてエピタキシャル
用の基板を基板装着治具に装着する場合、インジウムを
基板裏面に塗布する方法が主として行なわれてきた。(Prior Art) Molecular beam epitaxial growth (hereinafter referred to as MBE) has recently attracted attention as one of the high-quality thin film crystal growth methods. Conventionally, when mounting an epitaxial substrate on a substrate mounting jig in MBE equipment, a method has been mainly used in which indium is applied to the back surface of the substrate.
また最近％ＭＢＥ装置内の基板装着治具に改良を加え、
例えば金属ピンによってエピタキシャル用基板を基板装
着治具に固定し、インジウムを介さずにヒーターによっ
て直接基板温変を上げる方法が提案された（例えば、第
４５回秋季応用物理学会学術講演会 講演予塙集１２ａ
−ｐ−３，Ｐ、 ６ ］ １（１９８４））。In addition, we have recently made improvements to the board mounting jig in the %MBE equipment.
For example, a method has been proposed in which an epitaxial substrate is fixed to a substrate mounting jig using metal pins, and the temperature of the substrate is directly increased by a heater without using indium (for example, the 45th Autumn Academic Conference of the Japan Society of Applied Physics, Lecture Preparation) Collection 12a
-p-3,P,6 ] 1 (1984)).
（発明が解決し７ようとする問題点）
前記従来技術において、インジウム塗布法は、インジウ
ムによる基板表面及び結晶の汚染、更には納品成長後容
易にインジウムの除去ができないなどの問題があった。(Problems to be Solved by the Invention) In the prior art, the indium coating method had problems such as contamination of the substrate surface and crystal by indium, and furthermore, indium could not be easily removed after delivery and growth.
また、金属ビンを用いる方法は、基板の熱伝導率が悪い
場合特に基板面内の温度の均一性が悪くなり結晶の品質
を劣化させたυ、基板裏面から元素が飛散し、格子欠陥
を形成する場合があり、これが核となって結晶中にも転
位を発生させる要因になるなどの問題があった。In addition, if the thermal conductivity of the substrate is poor, the temperature uniformity within the substrate surface will deteriorate and the quality of the crystal will deteriorate. This poses a problem in that these may become nuclei and cause dislocations to occur in the crystal.
また、基板をブロック上に直接設置して基板温度上昇を
はかる場合、基板裏面の凹凸の九めに面内の温度均一性
に問題があワた。Furthermore, when the substrate is placed directly on a block to raise the temperature of the substrate, there are problems with in-plane temperature uniformity due to the irregularities on the back surface of the substrate.
本発明の目的は、以上のような問題点を克服した高品質
で高均一な結晶を得るための分子線エピタキシャル成長
装置の基板装着方法を提供することにある。An object of the present invention is to provide a method for mounting a substrate in a molecular beam epitaxial growth apparatus for obtaining high quality and highly uniform crystals that overcomes the above-mentioned problems.
（問題点を解決するための手段）
本発明着分子線エピタキシャル成長装置の基板装着治具
にエピタキシャル成長を行うために基板を装着する方法
において、前記エピタキシャル成長を行うための基板の
裏面に該基板を構成する元素のうちの少くとも一つの同
族元素を含む材料を形成した後に前記成長装置の基板装
着治具に固定することによって構成される。(Means for Solving the Problems) In the method for mounting a substrate for epitaxial growth on the substrate mounting jig of the molecular beam epitaxial growth apparatus of the present invention, the substrate is configured on the back surface of the substrate for epitaxial growth. It is constructed by forming a material containing at least one homologous element among the elements and then fixing it to the substrate mounting jig of the growth apparatus.
（作用）
本発明は、原則的に、基板裏面に熱伝導率が大きく、前
記基板の線膨張率に近い値を持つなどの条件を満足した
材料を形成することにより、基板中の元素飛散に伴う格
子欠陥の形成を防ぎ、例えば、基板裏面から、核所望の
形成材料を介して基板温度を上昇できる為、インジウム
などによる汚染も防ぐ作用を有している。更に基板裏面
の凹凸も該形成材料によりほぼ平坦化される為、面内の
温度均一性も優れている。(Function) In principle, the present invention prevents element scattering in the substrate by forming a material on the back surface of the substrate that satisfies conditions such as having a high thermal conductivity and a value close to the coefficient of linear expansion of the substrate. It also prevents the formation of lattice defects and, for example, increases the temperature of the substrate from the back surface of the substrate through the desired material for forming the nuclei, thereby preventing contamination with indium or the like. Furthermore, since the unevenness on the back surface of the substrate is almost flattened by the forming material, the in-plane temperature uniformity is also excellent.
ここで、前記条件を満足する材料は基本的に基板を構成
する元素のうちの少なくとも一つの同族元素を含む材料
であることが望ましい。第１表に代表的材料の物性パラ
メータの一覧表を示す。Here, the material that satisfies the above conditions is preferably a material that basically contains at least one homologue of the elements constituting the substrate. Table 1 shows a list of physical property parameters of representative materials.
第１表において、ＧａＡｓ基板に対しＡｅＮ、ＢＮは基
板と同様の■−■族化合物であり、線膨張係数及び熱伝
導率共に良好である。これに対し８ｉ０１は線膨張係数
も小さく、熱伝導重電極めて悪く、この目的には適さな
い。従って、本発明に従ってｋｌＮ又はＢＮを適用すれ
ば従来技術の問題点を克服した高品質で高均一な結晶が
得られることが分る。In Table 1, for the GaAs substrate, AeN and BN are the same group compounds as the substrate, and have good coefficients of linear expansion and thermal conductivity. On the other hand, 8i01 has a small coefficient of linear expansion and is extremely poor in heat conduction as a heavy electric current, making it unsuitable for this purpose. Therefore, it can be seen that by applying klN or BN according to the present invention, high quality and highly uniform crystals can be obtained that overcome the problems of the prior art.
ま九基板裏面に所望の材料を形成した後、インジウム塗
布によってＭＢＥ装置内の基板装着治具に固定する場合
でも結晶成長後に基板裏面のインジウムを除去すること
は容易であシ、基板損傷も極めて小さくできる。Even if the desired material is formed on the back side of the substrate and then fixed to the substrate mounting jig in the MBE equipment by coating indium, it is easy to remove the indium on the back side of the substrate after crystal growth, and the substrate is extremely damaged. Can be made smaller.
（実施例）
次に、本発明の実施例について図面を参照して説明する
。第１図は本発明の一実施例を説明するための分子線エ
ピタキシャル成長装置の要部の構成を示す模式的断面図
である。(Example) Next, an example of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing the configuration of a main part of a molecular beam epitaxial growth apparatus for explaining one embodiment of the present invention.
第１図において、１はヒーター、２はモリブデン（Ｍｏ
）７’ロツク、３はモリフ゛デンのビン、４は被着材料
であるｋｌＮ、５はＧａＡｓ基板である。In Figure 1, 1 is a heater, 2 is molybdenum (Mo
) 7' lock, 3 is a molybdenum bottle, 4 is klN which is a material to be adhered, and 5 is a GaAs substrate.
ｋｌＮけ例えば化学的気相堆積法（ＣＶＤ法〕によって
ＧａＡｓ基板裏面に形成する。その後、基板表面のエツ
チングを例えばＨ３Ｐ Ｏ、系屍蝕液で行い、第１図に
示し、たような形で、ＭＢＥ装置内の基板装着治具に固
定する。このような形式で、ＧａＡｓを２インチ基板全
面にＭＢＥ法により成長した所、極めて電気的特性の優
れた高品質結晶で１回内バラツキも少ない高均一なもの
が得られた。KlN is formed on the back surface of the GaAs substrate by, for example, chemical vapor deposition (CVD).The substrate surface is then etched using, for example, H3PO, a necrotic solution, as shown in Figure 1. , it is fixed to the substrate mounting jig in the MBE equipment.In this way, when GaAs is grown on the entire surface of the 2-inch substrate by the MBE method, it is a high-quality crystal with extremely excellent electrical characteristics, and there is little variation within one run. A highly uniform product was obtained.
従来方法で成長した結晶と比較し、て、面内均−性で３
０％程優れており、更に結晶表面の欠陥も少なかった。Compared to crystals grown using conventional methods, the in-plane uniformity was 3.
0%, and there were also fewer defects on the crystal surface.
なお、本実施例でＦｉＭｏブロックを基板全面に渡って
設置したが、基板の端のみに設け、基板と上述したｋｌ
Ｎを直接、ヒーターで熱める場合でも、Ａｓの飛散など
の問題を防ぐことができ効果は大きい。Although the FiMo block was installed over the entire surface of the board in this example, it was installed only at the edge of the board, and
Even when N is heated directly with a heater, problems such as As scattering can be prevented, which is highly effective.
以上の実施例から、本発明によって高品質で高均一な結
晶が得られることが分る。From the above examples, it can be seen that high quality and highly uniform crystals can be obtained by the present invention.
なお、本発明は■−■族化合物だけでなく、■−Ｍ族化
合物、単結晶等々すべての材料に適用できることは言う
までもない。It goes without saying that the present invention is applicable not only to ■-■ group compounds but also to all materials such as ■-M group compounds, single crystals, etc.
（発明の効果）
以上説明したように本発明により作製したＭＢＥ結晶は
、従来方法のものに比べ極めて改善され、高品質で高均
一な結晶を有ることができ、特に将来ＭＢＥ結晶でＩＣ
化を考える場合、本発明によるＭＢＥ結晶は回路設計上
の余裕度を小さくできる他、素子の作製歩留まりをも大
幅に改善できるなど多大な効果を有している。(Effects of the Invention) As explained above, the MBE crystal produced by the present invention is extremely improved compared to those produced by conventional methods, and can have high quality and highly uniform crystals.
When considering design, the MBE crystal according to the present invention has great effects such as not only reducing margins in circuit design but also greatly improving device manufacturing yield.
第１図は、本発明の一実施例を説明するための分子線エ
ピタキシャル成長装置の要部の基本的構成を示す模式的
断面図である。
１・・・・・・ヒーター、２・・・・・・ＭＯブロック
、３・・・・・・基板、４・・・・・・破着材料。
￥１図FIG. 1 is a schematic cross-sectional view showing the basic configuration of a main part of a molecular beam epitaxial growth apparatus for explaining one embodiment of the present invention. 1...Heater, 2...MO block, 3...Substrate, 4...Breaking material. ¥1 figure
Claims (1)
キシャル成長を行うための基板を装着する方法において
、前記エピタキシャル成長を行うための基板の裏面に該
基板を構成する元素のうちの少くとも一つの同族元素を
含む材料を形成した後に前記成長装置の基板装着治具に
固定することを特徴とする分子線エピタキシャル成長装
置の基板装着方法。In a method of mounting a substrate for epitaxial growth on a substrate mounting jig of a molecular beam epitaxial growth apparatus, a material containing at least one homologous element of the elements constituting the substrate on the back surface of the substrate for epitaxial growth. 1. A method for mounting a substrate in a molecular beam epitaxial growth apparatus, the method comprising: forming a substrate and then fixing it to a substrate mounting jig of the growth apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26434585A JPS62123093A (en) | 1985-11-22 | 1985-11-22 | Mounting of substrate on molecular beam epitaxial growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26434585A JPS62123093A (en) | 1985-11-22 | 1985-11-22 | Mounting of substrate on molecular beam epitaxial growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62123093A true JPS62123093A (en) | 1987-06-04 |
Family
ID=17401869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26434585A Pending JPS62123093A (en) | 1985-11-22 | 1985-11-22 | Mounting of substrate on molecular beam epitaxial growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123093A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515315A (en) * | 1993-12-24 | 1996-05-07 | Sony Corporation | Dynamic random access memory |
| US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
| US6723166B2 (en) | 1999-07-07 | 2004-04-20 | Siemens Aktiengesellschaft | Seed crystal holder with lateral mount for an SiC seed crystal |
-
1985
- 1985-11-22 JP JP26434585A patent/JPS62123093A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515315A (en) * | 1993-12-24 | 1996-05-07 | Sony Corporation | Dynamic random access memory |
| US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
| US6723166B2 (en) | 1999-07-07 | 2004-04-20 | Siemens Aktiengesellschaft | Seed crystal holder with lateral mount for an SiC seed crystal |
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