JPS62124511A - Preparation of silicon wafer having optical waveguide film - Google Patents
Preparation of silicon wafer having optical waveguide filmInfo
- Publication number
- JPS62124511A JPS62124511A JP60264625A JP26462585A JPS62124511A JP S62124511 A JPS62124511 A JP S62124511A JP 60264625 A JP60264625 A JP 60264625A JP 26462585 A JP26462585 A JP 26462585A JP S62124511 A JPS62124511 A JP S62124511A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- film
- optical waveguide
- dopant
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Optical Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光鵡積回路分野で用いる光導波膜付シリコン
ウェハの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a silicon wafer with an optical waveguide film used in the field of optical bulk circuits.
〔従来技術・発明が解決しようとする問題点〕光導波膜
を形成したシ１；コ／ウェハは、導波形光部品や光％
ｊＪ回路を作製するための出発材料として期待されてい
る。特に、石英系光導波膜を形成したシリコンウェハは
、光伝送路の主流を占める石英系光ファイバとの接続特
性などの整合性に浸れていることから、実用的な導波形
光部品や光集積回路の実現手段として注目されている。[Prior art/problems to be solved by the invention] The wafer on which the optical waveguide film is formed is not suitable for waveguide optical components or optical fibers.
It is expected to be a starting material for creating jJ circuits. In particular, silicon wafers on which silica-based optical waveguide films are formed are highly compatible with connection characteristics and other properties with silica-based optical fibers, which are the mainstream of optical transmission lines, and are therefore useful for practical waveguide optical components and optical integration. It is attracting attention as a means of realizing circuits.
従来、シリコンウェハ上に光７アイパと整合し得る石英
系光導波膜を形成するには、５１ｃｌ！、を主成分とし
、Ｇｅ０１４１ ＴｉＣｌ４ ＨＢｅ／３ ＋ ＰＣ
ｌｑ等−を適正に添加したガラス形成原料ガスの火炎加
水分解反応により、シリコンウェハ上に、８ ｉ ｏ。Conventionally, in order to form a quartz-based optical waveguide film on a silicon wafer that can match the optical 7-eyeper, 51 cl! , with Ge0141 TiCl4 HBe/3 + PC as the main component.
8 iO on a silicon wafer by flame hydrolysis reaction of a glass-forming raw material gas to which 1q, etc. have been appropriately added.
を主成分とし ＧｅＯ２、Ｔｉｅ、 、 Ｂｌ Ｏ３、
Ｐ、Ｏ。The main components are GeO2, Tie, , BlO3,
P.O.
等をドーパントとして含むガラス微粒子を堆積し、しか
る後、ガラス微粒子膜が堆積されたシリコンウェハを電
気炉中で高温（１１００〜１４００℃）に加熱して、ガ
ラス微粒子膜を焼結・透明ガラス化し、光導波膜付シリ
コンとする方法が用いられていた。ガラス微粒子堆積期
間中のガラス形成原料ガスの組成を時間的に変化させる
ことにより模厚方向に導波構造の形成に必要な屈折率分
布を与えることができるのである（参考文献： Ｍ −
Ｋａｗａｃｈｉ他： Ｊａｐａｎ、Ｊ、Ａｐｐｌ、Ｐｈ
ｙｓ、ｖｏｌ、 ２２（１９８３）随１２ ｐ、１９
３２ Ｌガラス組成には、この屈折率分布を制御するド
ーパントＧθＯ，，Ｔｉ○、の他に、ガラス微粒子の軟
化温度を低下さ？、透明ガラス化を容易にするためのド
ーパントＢ、Ｏ，、ｐ、ｏ、が添加されているが、本発
明者らの検討によれば、透明ガラス化時にＢあるいはＰ
がシリコンウェハ内部にまで拡散し、それぞれＰ型、Ｎ
１ｔＪのドーパントとして作用し、シリコンウェハの極
性や電気伝導度を大幅に変化さ？、その後のシリコンウ
ェハの緒特性を利用する光集積回路の構成に重大な支障
を及ぼすという問題点があった。After that, the silicon wafer on which the glass fine particle film was deposited was heated to a high temperature (1100 to 1400°C) in an electric furnace to sinter the glass fine particle film and turn it into transparent vitrification. , a method of using silicon with an optical waveguide film was used. By temporally changing the composition of the glass-forming raw material gas during the glass particle deposition period, it is possible to provide the refractive index distribution necessary for forming a waveguide structure in the thickness direction (Reference: M-
Kawachi et al.: Japan, J., Appl., Ph.
ys, vol, 22 (1983) volume 12 p, 19
In addition to dopants GθO, Ti○, which control the refractive index distribution, the 32L glass composition also contains dopants that lower the softening temperature of the glass particles. , dopants B, O,, p, o are added to facilitate transparent vitrification, but according to the studies of the present inventors, B or P is added during transparent vitrification.
diffuses into the silicon wafer, forming P-type and N-type, respectively.
It acts as a 1tJ dopant and significantly changes the polarity and electrical conductivity of the silicon wafer. However, there was a problem in that it seriously hindered the subsequent construction of optical integrated circuits that utilized the characteristics of silicon wafers.
本発明の目的は、光導波膜付シリコンウェハの製造工程
において、石英系ガラス膜からシリコンウェハ側へのド
ーパント拡散を檀極的に制御して、光集積回路の＋１成
に適した光導波膜付シリコンウェハの製造方法を提供す
ることにある。An object of the present invention is to provide an optical waveguide film suitable for +1 formation of optical integrated circuits by controlling dopant diffusion from a silica-based glass film to the silicon wafer side in a manufacturing process of a silicon wafer with an optical waveguide film. An object of the present invention is to provide a method for manufacturing a silicon wafer with a silicon wafer.
本発明ｃｔ、シリコン基板上への石英系光導波模の形成
に先だちドーパント拡散時ｌＥ用の拡散阻止層を設け、
しかる後ガラス数粒子膜を堆積し、高温で透明ガラス化
することを主要な特徴とする。In the ct of the present invention, a diffusion prevention layer for IE during dopant diffusion is provided prior to the formation of a quartz-based optical waveguide pattern on a silicon substrate,
The main feature is that a film of several glass particles is then deposited and turned into transparent glass at a high temperature.
シリコンウェハ側へのドーパント拡散の影響に配ａして
いる点で、従来の光導波膜付シリコンウェハの製造方法
とは異なるっ本発明によれば、拡散阻止層をパ４−ン状
に設けておくことＫより、シ１）コンウェハへのドーパ
ント拡散を選択的に制御し、光＾波膜形成と同時にシリ
コンウエノ・表面のドーパント分布をパターン状に変化
さ忙ることもできる。The present invention differs from conventional methods of manufacturing silicon wafers with optical waveguide films in that it takes into consideration the influence of dopant diffusion to the silicon wafer side.According to the present invention, a diffusion blocking layer is provided in a pattern. From the following points, 1) It is possible to selectively control the dopant diffusion into the silicon wafer and change the dopant distribution on the silicon wafer surface in a pattern at the same time as the optical wave film is formed.
拡散阻止層としては、シリコンウェハ表面を熱酸化する
ことによって得られるＳｉｎ、膜、あるいはＣＶＤ法な
どによりシリコンウェハ表面に形成される窒化シリコン
（ＳｉＮ）＄１を用いる。これらの膜は、その密度が高
いために、ドーパントの拡散を有効に阻止できることが
基本的な機能であるつそのなかにも、均一な薄い膜が形
成でき、シリコンウェハに大きな歪を与えないこと、以
後の処理においても結晶化を生じないこと、ｅ！＋体で
あるためにシリコンの伝導型に影響を与えｒｅいなどの
特徴を有するっこの拡散阻止／４ｉは、シリコンウェハ
表面の全面に形成する場合と、全面忙形成した後、所望
の部分を除去する場合とがある。後者の場合は、拡散阻
止層を除去した部分では、シリコンウェハ上に堆積され
るガラス微粒子中のドーパントがガラス微粒子の透明化
の工程でシリコンウェハ中に拡散するために、その部分
の伝導型を制御することができ、シリコンウェハ中ＫＷ
別な機能を有する部分を形成するだめの第１の工程とな
りつる。As the diffusion prevention layer, a film of Sin obtained by thermally oxidizing the surface of a silicon wafer, or silicon nitride (SiN) $1 formed on the surface of a silicon wafer by a CVD method or the like is used. The basic function of these films is to effectively prevent dopant diffusion due to their high density, but they also have the ability to form uniform thin films without causing large distortions to the silicon wafer. , no crystallization occurs in subsequent treatments, e! Diffusion prevention/4i, which has characteristics such as reluctance and influence on the conductivity type of silicon because it is a positive substance, can be formed on the entire surface of a silicon wafer, or after it has been formed on the entire surface of the silicon wafer, it can be formed on a desired part. It may be removed. In the latter case, the dopant in the glass particles deposited on the silicon wafer diffuses into the silicon wafer in the process of making the glass particles transparent in the area where the diffusion prevention layer has been removed, so the conductivity type of that area changes. Can control KW in silicon wafer
This is the first step in forming parts with different functions.
〔実施例１〕
第１図は、本発明の第一の実施例を説明する工程図であ
って、光導波β冒ζｔシリコンウェハの断面を示す、ま
す、シリコンウェハ１の表面を熱酸化することにより、
８１０．膜からなるドーパント拡散阻止Ｉ→２を形成し
た（第１図（ａ））。使用したシリコンウェハは、Ｐ型
９面方位（１ｎＱ）、抵抗率９ｎｃｒｎのＣＺウニ・・
であろつ熱酸化は、ドライＯ，ガス雰囲気中１０００℃
にて実施したもので、Ｓ１０！膜厚は約１ｎｎｎ Ａで
ちろうつづいて、５ＩＣ１４を主成分として、ドーパン
トとしてＧｅ０１４ 、ＢＣｌｇ 、ＰＯｌｑを適宜添
加したガラス形成原料ガスの火炎加水分解反応により、
約７００μｍ厚のガラス微粒子膜３を堆積した（第１図
ｆｂｌ ）。[Example 1] FIG. 1 is a process diagram for explaining the first example of the present invention, showing a cross section of a silicon wafer exposed to the optical waveguide. First, the surface of the silicon wafer 1 is thermally oxidized. By this,
810. A dopant diffusion barrier I→2 consisting of a film was formed (FIG. 1(a)). The silicon wafer used was CZ sea urchin with P-type 9-plane orientation (1nQ) and resistivity of 9ncrn.
Thermal oxidation is carried out at 1000℃ in a dry O, gas atmosphere.
It was carried out at S10! The film thickness was approximately 1 nnn A. Next, by flame hydrolysis reaction of a glass forming raw material gas containing 5IC14 as a main component and appropriately adding Ge014, BClg, and POLq as dopants,
A glass particle film 3 having a thickness of about 700 μm was deposited (FIG. 1fbl).
つづいて、電気炉中（酸化性雰囲気）で１１５０℃にま
で加熱し、２時間保持してガラス微粒子膜３を透明ガラ
ス化し、シリコンウエノ・１上の光導波膜４を得た（第
１図（ｃｌ ） 、光導波Ｉ！１′￥４は、？Ｒ１図（
ｄｌ ＋Ｃ示すようにバッファＮ４ａ、コアｔｎ−ｔｂ
、クラッド層４ｃから成る三Ｒｙ１ｔ、Ｎ造を有し、ガ
ラス組成および層厚は以下の通りである。Subsequently, it was heated to 1150°C in an electric furnace (oxidizing atmosphere) and held for 2 hours to turn the glass fine particle film 3 into transparent vitrification, thereby obtaining an optical waveguide film 4 on silicon Ueno-1 (Fig. 1). (cl), the optical waveguide I!1'\4 is ?R1 diagram (
dl +C buffer N4a, core tn-tb as shown
, cladding layer 4c, and the glass composition and layer thickness are as follows.
バッファ層 ｓｔｏ、 ９０モ／Ｉ／％ １０μｍＢ
、０． ６モ／ｌ、％
Ｐ、０． ４モルチ
コ ア 層 Ｓｉｎ、 ８３モアｔ、％ ５０μｍＧ
ｅＯ２８モ／ｌ、チ
Ｂ、０． ５モ／Ｌ／チ
ｐ、ｏ！１４モルチ
クラッド層 Ｓｉｎ、 ９０モルチ ５μｍ！３．
ｏ、６モルチ
Ｐ？ Ｏ！＋ ４モ／Ｌ／ｓ
第２図は透明ガラス化処理した光導波膜付シリコンウェ
ハでのガラス膜中ドーパントのシリコンウェハへの拡散
の様子を斜め研磨試料での広がり抵抗測定により調べ、
ドーパント拡散に換算したものである。ｐｎ判定器によ
り調べたシリコンウェハ表面の伝導厖はｎ型で、８１０
を膜中の拡散係数がホウ素（Ｂ）よりも数桁大きいリン
（Ｐ）の拡散が起こっていることがわかる。Buffer layer sto, 90mo/I/% 10μmB
,0. 6 mo/l, % P, 0. 4 moltic core layer Sin, 83 moa t, % 50μmG
eO28 mo/l, ChiB, 0. 5mo/L/chip, o! 14 molti clad layer Sin, 90 molti 5μm! 3.
o, 6 molti P? O! +4Mo/L/s Figure 2 shows how the dopant in the glass film diffuses into the silicon wafer in a silicon wafer with an optical waveguide film that has been subjected to transparent vitrification treatment by measuring the spreading resistance using an obliquely polished sample.
This is converted to dopant diffusion. The conductivity on the surface of the silicon wafer examined using a pn determiner is n-type, and is 810
It can be seen that phosphorus (P), whose diffusion coefficient in the film is several orders of magnitude larger than that of boron (B), is diffusing.
第３図は、拡散阻止層を設けなかった場合の測定結果を
示す。第２図に比較して表面のＰの濃度は、４０倍以上
と高い５以上示したように、本発明の方法における厚さ
１０（１１１Ａの熱酸化Ｓｉｏ、％Ｓからなるドーパン
ト拡散阻止層により、ドーパントの拡散量を１／４ｏ以
下に制御する効果を得た。FIG. 3 shows the measurement results when no diffusion blocking layer was provided. As shown in Figure 2, the concentration of P on the surface is more than 40 times higher than that shown in Figure 2. , the effect of controlling the amount of dopant diffusion to 1/4o or less was obtained.
〔実施例２〕
実施例１における熱酸化５１ｏＪｊ’、の代わりに減圧
ＯＶＤにより２（１００Ａ厚の窒化シリ：ｒｙ（ｓＩＮ
）７１Ｋ ヲ＋ｓ着さぜたシリコンウェハにより同様の
光導波膜作製を行なったところ、やはり一部近いドーパ
ント拡散量の抑制効果が得られたつ
以上の実施例においては、シリコンウェハ表面に一様に
ドーパント拡散阻止層を設けたが、拡散阻止層をパター
ン状に設けておイことにより、以下に説明するようにシ
リコンウニノーへのドーパント拡散を局部的に制御でき
ろう
〔実施例３〕
第４図（ａｔ〜（（１１は、ドーパント拡散を故意に所
望部分に発生さ？る本発明の一実施例を示す工程図であ
る。シリコンクエバ１上に拡散阻止層２を形成する工程
第４図（ａｔに綬いて、拡散阻止層２の所望部分を除去
し、パターン化された拡散阻止層２ａを得る第４図（ｌ
ｔｌ。次に、ガラス微粒子膜３を堆積し第４図（ｃｌ、
続いて高温電気炉中で暁結し、透明ガラス化し、光導波
膜４を付けたシリコンウェハとする第４図（ｄ）５この
工程によれば、焼結透明ガラス化期間中、拡散阻止、Ｎ
２ａの窓５を通してガラス微粒子膜３からシリコンウニ
ノー１１１１１ヘドーノくントがｌ：？Ｊ部的に拡散し
た領域６が形成される。例えば、実施例１と同様のシリ
コンウニノ・と光導波膜形成条件ならびに抵抗率０．５
ΩσのＰ型シリコンウェハを用い、熱酸化Ｓ１０．膜を
、レジストエ梶とフッ酸を利用してパターン化した例で
は、ドーパントが局部的に拡散した領域はｎ型で抵抗率
は０．１０傭となり、その他のシリコンウニノ・領域は
ｐ型０．５Ωσに留まり、パターン化された拡散阻止層
をシリコンウェハ尺面に形成することにより、シリコン
ウェハの所望部分にドーパントを肯択的に拡散できるこ
とがわかる。[Example 2] Instead of thermal oxidation 51oJj' in Example 1, 2 (100A thick silicon nitride:ry(sIN
) When a similar optical waveguide film was fabricated using a silicon wafer coated with 71K wo + s, a similar effect of suppressing the amount of dopant diffusion was obtained. Although the dopant diffusion blocking layer was provided, by providing the diffusion blocking layer in a pattern, it would be possible to locally control the dopant diffusion into the silicon unicorn as described below. [Example 3] Part 4 (11 is a process diagram showing an embodiment of the present invention in which dopant diffusion is intentionally generated in a desired portion. 4 (l), a desired portion of the diffusion prevention layer 2 is removed to obtain a patterned diffusion prevention layer 2a.
tl. Next, a glass fine particle film 3 is deposited as shown in FIG.
Subsequently, it is sintered in a high-temperature electric furnace to form a transparent vitrified silicon wafer with an optical waveguide film 4 attached thereto. According to this process, during the sintering and transparent vitrification period, diffusion prevention, N
2a through the window 5 of the glass particulate film 3. A region 6 diffused in the J portion is formed. For example, the same silicone and optical waveguide film formation conditions as in Example 1 and the resistivity of 0.5 are used.
Using a P-type silicon wafer of Ωσ, thermal oxidation S10. In an example where the film is patterned using a resist layer and hydrofluoric acid, the region where the dopant is locally diffused is n-type and has a resistivity of 0.10m, and the other silicon regions are p-type 0.10m. It can be seen that by staying at 5Ωσ and forming a patterned diffusion blocking layer on the silicon wafer's lateral surface, the dopant can be positively diffused into the desired portion of the silicon wafer.
第５図は、第４図の方法を利用して、光検出器付光導波
路を製造する工程の説明図である５第５図ｆａｔは、第
４図の方法で製造された光導波膜付シリコン基板であり
、ｐ型シリコン基板１の一部６は、ドーパントが局部的
に拡散した領域（ｎ型領域）が形成されている。第５図
ｆｂｌは、光導波膜４の不要部分を反応性イオンエツチ
ング工程により除去してｎ型領域６に光導波路端部７ｅ
Ｌが位置するように光導波路７を形成したものである。Fig. 5 is an explanatory diagram of the process of manufacturing an optical waveguide with a photodetector using the method shown in Fig. 4. A part 6 of the p-type silicon substrate 1, which is a silicon substrate, has a region (n-type region) in which a dopant is locally diffused. FIG. 5fbl shows that unnecessary portions of the optical waveguide film 4 are removed by a reactive ion etching process to form an optical waveguide end 7e in the n-type region 6.
The optical waveguide 7 is formed so that L is located.
光導波路７を左方から伝播してくる信号光は、光導波路
端面７ａから放射され、その一部はｎ型領域６へと吸収
される。ｎ型領域は、ｐ型シリコン基板１との間で深さ
数μ謂の位置にｐｎ接合を有しているので、ｐ型シリコ
ン基板１とｎ型領域６にそれぞれ電極リード（図では省
略）を設けることにより光起電力を取り出し、光検出器
として動作さ忙ることか可能とｆｔ−リ、光集積回路の
構成に介するところが大である。Signal light propagating through the optical waveguide 7 from the left is emitted from the optical waveguide end face 7a, and a portion of it is absorbed into the n-type region 6. Since the n-type region has a pn junction at a depth of several micrometers with the p-type silicon substrate 1, electrode leads (not shown in the figure) are connected to the p-type silicon substrate 1 and the n-type region 6, respectively. It is possible to take out the photovoltaic force and operate it as a photodetector by providing a photodetector, which greatly depends on the structure of the optical integrated circuit.
その他の応用例としては、第４図の方法で形成されるｐ
ｎ Ｗ合に逆バイアス」圧を印加することにより、複数
のｎ型領域上に装着したレーザダイオード等の光素子や
プリアンプ等の電子素子間の電気的アイソレーションを
容易にすること等を挙げることができる。これは、シリ
コン基板上に形成した石英系光導波路にレーザダイオー
ドアレイやプリアンプ、ドライバー回路５１Ｆを複合搭
載したハイブリッド光集積回路の構成に有効である。As another example of application, p formed by the method shown in FIG.
By applying a reverse bias pressure when n W is applied, electrical isolation between optical devices such as laser diodes and electronic devices such as preamplifiers mounted on multiple n-type regions can be facilitated. I can do it. This is effective for constructing a hybrid optical integrated circuit in which a laser diode array, preamplifier, and driver circuit 51F are mounted on a quartz-based optical waveguide formed on a silicon substrate.
また、シリコン基板の化学エツチング特性を活用して、
光集積回路構造に多様性を付与する技術分野に応用する
と、光導波膜の不要部分が除去され光導波路等が形成さ
れたシリコン基板表面の所望領域（例えばｎ型領域）の
みを化学エツチングにより掘り下げ、光フアイバ接続用
や光素子装着用ガイド溝として応用できることも付記し
てお（５これは、シリコン基板の化学エツチング速度が
シリコン基板の極性にきわめて敏感であることを利用し
ているものである。In addition, by utilizing the chemical etching properties of silicon substrates,
When applied to the technical field of adding diversity to optical integrated circuit structures, unnecessary parts of the optical waveguide film are removed and only desired regions (for example, n-type regions) on the silicon substrate surface on which optical waveguides are formed are dug down by chemical etching. It is also noted that it can be applied as a guide groove for connecting optical fibers or mounting optical elements (5) This takes advantage of the fact that the chemical etching rate of silicon substrates is extremely sensitive to the polarity of the silicon substrate. .
以上説明したように、本発明によれば、拡散阻止層を設
けることにより、光導波膜作製時のシリコン基板側への
ドーパント拡散を１／４ｏ以下に抑制することができる
。また、拡散阻止層をパターン化しておけば、所望部分
に選択的にドーパント拡散を引き起こすこともできる。As described above, according to the present invention, by providing a diffusion prevention layer, dopant diffusion toward the silicon substrate side during fabrication of an optical waveguide film can be suppressed to 1/4 or less. Further, by patterning the diffusion blocking layer, dopant diffusion can be caused selectively in desired portions.
この発明は、光導波膜で光回路素子を形成したシリコン
基板に別プロセスで電子素子を製作する光集積回路への
応用において特に効果がある。すなわち、この発明によ
れば、光回路素子形成時の基板ドーパント濃度の変化を
極めて小さくできる。This invention is particularly effective in application to optical integrated circuits in which electronic elements are manufactured in a separate process on a silicon substrate on which optical circuit elements are formed using optical waveguide films. That is, according to the present invention, changes in the substrate dopant concentration during formation of the optical circuit element can be made extremely small.
よって、従来法のように、光回路素子形成時のドーパン
ト拡散による基板ドーパント濃度の大幅な変化によって
生じるプロセス上の制約を受けることな（、光回路素子
形成済の基板に電子素子を製作できる。また、拡散阻止
層をパターン化しておけば、光導波膜を形成する間に電
子素子製作に必要な拡散工程を副次的に行なうことがで
きるため、プロセスを大幅に簡略化できるという利点が
生じるっまた高温熱処理を伴なう拡散工程を光回路素子
形成済行なう場合に生じる光回路素子の特性劣化を避け
られるほか、高温熱処理の回数を減ら？るため、電子素
子特性を支配する基板の結晶性を良好な状態に保ち易い
という特長も有する。光導波膜作製時のドーパント拡散
を抑制する本発明の光導波膜付シリコンウェハの製造方
法は、シリコン基板の緒特性を活用するシリコン基板上
の光集積回路の構成に際しその役割が大であるうTherefore, unlike conventional methods, electronic devices can be fabricated on a substrate on which optical circuit elements have already been formed, without being subject to process constraints caused by large changes in substrate dopant concentration due to dopant diffusion during the formation of optical circuit elements. Additionally, if the diffusion blocking layer is patterned, the diffusion process required for electronic device fabrication can be performed as a secondary step while forming the optical waveguide film, which has the advantage of greatly simplifying the process. In addition, it is possible to avoid the deterioration of the characteristics of the optical circuit elements that occurs when the diffusion process involving high-temperature heat treatment is performed after the optical circuit elements have been formed. The method for manufacturing a silicon wafer with an optical waveguide film of the present invention, which suppresses dopant diffusion during the production of an optical waveguide film, has the advantage that it is easy to maintain good properties. It plays an important role in the construction of optical integrated circuits.
第１図は本発明の実、ｍ９’ｌｌを示す図であって、第
１図（ａｌ〜（ｃｌは工程図、第１図（ｄｉは第１図（
ｃｌｌ矢印部部分拡大図、第２図は本発明の方法で作製
した拡散阻止層を有する光導波膜付シリコンクエバのド
ーパント濃度深さ方向分布の測定結果を示す図、第３図
は従来法におけろドーパント濃度深さ方向分布の測定結
果を示す図、第４図ｆａｌ〜（ｄ３は本発明の別の実ｍ
９＋１を示す工程図、第５図（ａｌ、＋ｂｔは本発明
を応用して作製した光検出器付光導波路の構造を示す図
である。
１・・・・・・シリコンウェハ、２・・・・・・ドーパ
ント拡散阻止層、５・・・・・・ガラス微粒子膜、４・
・・・・・光導波膜。FIG. 1 is a diagram showing the fruit of the present invention, m9'll, and FIG. 1 (al to (cl) is a process chart, FIG.
Fig. 2 shows the measurement results of the dopant concentration distribution in the depth direction of a silicon cube with an optical waveguide film having a diffusion prevention layer manufactured by the method of the present invention, and Fig. 3 shows the results of the measurement of the dopant concentration distribution in the depth direction of the silicon quaver with a diffusion prevention layer manufactured by the method of the present invention. Diagrams showing the measurement results of the Kero dopant concentration distribution in the depth direction, Figure 4 fal ~ (d3 is another example of the present invention)
5 (al, +bt are diagrams showing the structure of an optical waveguide with a photodetector manufactured by applying the present invention. 1...Silicon wafer, 2... ... Dopant diffusion prevention layer, 5... Glass fine particle film, 4.
...Optical waveguide film.
Claims (1)
いは火炎加水分解反応により、ＳｉＯ＿２を主成分とし
、ドーパントを含むガラス微粒子膜を堆積した後、前記
シリコンウェハとガラス微粒子膜を加熱してガラス微粒
子膜を透明ガラス化する光導波膜付シリコンウェハの製
造方法において、ガラス微粒子膜の堆積に先だち、ドー
パントのシリコンウェハ側への拡散を抑制する拡散阻止
層をシリコンウェハ表面の所望の部分に形成しておくこ
とを特徴とする光導波膜付シリコンウェハの製造方法。A glass particulate film containing SiO_2 as a main component and a dopant is deposited on a silicon wafer by thermal oxidation or flame hydrolysis reaction of a glass forming raw material gas, and then the silicon wafer and glass particulate film are heated to form a glass particulate film. In a method of manufacturing a silicon wafer with an optical waveguide film for transparent vitrification, a diffusion prevention layer for suppressing diffusion of dopant toward the silicon wafer is formed on a desired portion of the silicon wafer surface prior to depositing a glass fine particle film. A method for manufacturing a silicon wafer with an optical waveguide film, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264625A JP2622108B2 (en) | 1985-11-25 | 1985-11-25 | Method for manufacturing silicon wafer with optical waveguide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264625A JP2622108B2 (en) | 1985-11-25 | 1985-11-25 | Method for manufacturing silicon wafer with optical waveguide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62124511A true JPS62124511A (en) | 1987-06-05 |
| JP2622108B2 JP2622108B2 (en) | 1997-06-18 |
Family
ID=17405936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60264625A Expired - Lifetime JP2622108B2 (en) | 1985-11-25 | 1985-11-25 | Method for manufacturing silicon wafer with optical waveguide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2622108B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366511A (en) * | 1986-09-09 | 1988-03-25 | Fujitsu Ltd | Production of quartz optical waveguide |
| US4927781A (en) * | 1989-03-20 | 1990-05-22 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
| JPH02253205A (en) * | 1989-03-28 | 1990-10-12 | Sumitomo Electric Ind Ltd | Optical circuit |
| JPH05232335A (en) * | 1992-02-20 | 1993-09-10 | Hitachi Cable Ltd | Production of glass waveguide |
| JPH0798420A (en) * | 1993-04-26 | 1995-04-11 | Hitachi Cable Ltd | Production of optical waveguide |
| WO2000046618A1 (en) * | 1999-02-05 | 2000-08-10 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
| EP1160593A2 (en) * | 2000-05-29 | 2001-12-05 | Shin-Etsu Chemical Co., Ltd. | Manufacture of optical waveguide substrate |
| EP1209493A1 (en) * | 2000-11-24 | 2002-05-29 | Shin-Etsu Chemical Co., Ltd. | An optical waveguide and a method for producing it |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57202506A (en) * | 1981-06-06 | 1982-12-11 | Nippon Sheet Glass Co Ltd | Optical circuit and its production |
-
1985
- 1985-11-25 JP JP60264625A patent/JP2622108B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57202506A (en) * | 1981-06-06 | 1982-12-11 | Nippon Sheet Glass Co Ltd | Optical circuit and its production |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366511A (en) * | 1986-09-09 | 1988-03-25 | Fujitsu Ltd | Production of quartz optical waveguide |
| US4927781A (en) * | 1989-03-20 | 1990-05-22 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
| JPH02253205A (en) * | 1989-03-28 | 1990-10-12 | Sumitomo Electric Ind Ltd | Optical circuit |
| JPH05232335A (en) * | 1992-02-20 | 1993-09-10 | Hitachi Cable Ltd | Production of glass waveguide |
| JPH0798420A (en) * | 1993-04-26 | 1995-04-11 | Hitachi Cable Ltd | Production of optical waveguide |
| WO2000046618A1 (en) * | 1999-02-05 | 2000-08-10 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
| GB2362963A (en) * | 1999-02-05 | 2001-12-05 | Univ Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
| GB2362963B (en) * | 1999-02-05 | 2003-03-12 | Univ Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
| US6735370B1 (en) | 1999-02-05 | 2004-05-11 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
| EP1160593A2 (en) * | 2000-05-29 | 2001-12-05 | Shin-Etsu Chemical Co., Ltd. | Manufacture of optical waveguide substrate |
| EP1160593A3 (en) * | 2000-05-29 | 2004-03-10 | Shin-Etsu Chemical Co., Ltd. | Manufacture of optical waveguide substrate |
| EP1209493A1 (en) * | 2000-11-24 | 2002-05-29 | Shin-Etsu Chemical Co., Ltd. | An optical waveguide and a method for producing it |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2622108B2 (en) | 1997-06-18 |
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| EXPY | Cancellation because of completion of term |