JPS62123099A - Pyrolytic vapor growth method - Google Patents
Pyrolytic vapor growth methodInfo
- Publication number
- JPS62123099A JPS62123099A JP25968985A JP25968985A JPS62123099A JP S62123099 A JPS62123099 A JP S62123099A JP 25968985 A JP25968985 A JP 25968985A JP 25968985 A JP25968985 A JP 25968985A JP S62123099 A JPS62123099 A JP S62123099A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- diphosphine
- inp
- pyrolytic vapor
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は少なくともリン（Ｐ）を含有する■族元素化合
物と■族元素化合物とを用いて１１Ｉ−Ｖ族化合物半導
体結晶の熱分解気相成長を行なう方法に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for thermally decomposing a group 11I-V compound semiconductor crystal in a vapor phase using a group Ⅰ element compound containing at least phosphorus (P) and a group Ⅰ element compound. It is about how to grow.
熱分解気相成長方法は■族元素のアルキル化合物と■族
元素化合物を原料ガスとし、この原料ガスを熱分解して
基板結晶上に成長させている。従って、少なくとも原料
ガスが分解する温度まで基板を加熱しなければならない
。In the pyrolysis vapor phase growth method, an alkyl compound of a group Ⅰ element and a compound of a group Ⅰ element are used as raw material gases, and the raw material gases are pyrolyzed and grown on a substrate crystal. Therefore, the substrate must be heated to at least a temperature at which the source gas decomposes.
ところでＰを含む■−■族化合物半導体結晶の熱分解気
相成長方法において、Ｐの供給源として一般にホスフィ
ン（ＰＨｔ）が用いられている。By the way, in a method for pyrolytic vapor phase growth of a P-containing group compound semiconductor crystal, phosphine (PHt) is generally used as a P source.
しかし、このＰＨ，は熱分解効率が悪く、ＧａＡｓやＩ
ｎＰ等の成長における通常の基板温度である５００℃〜
８００℃ではなかなか分解されず、結晶中へのＰの取り
込まれ率が極めて低くなるという問題点を有していた。However, this PH has poor thermal decomposition efficiency, and
500℃~ which is the normal substrate temperature for growth of nP etc.
The problem was that it was difficult to decompose at 800°C, and the rate of P incorporation into the crystal was extremely low.
そこで所望の組成の結晶を成長させるには、他の原料ガ
スの供給量に比べて熱分解効率の悪いＰＨ３の供給量は
数十倍から数百倍程度多くする必要があり、すなわち熱
分解効率の悪さをその供給量の絶対量を多くすることで
補っていた。Therefore, in order to grow crystals with the desired composition, it is necessary to increase the supply amount of PH3, which has poor thermal decomposition efficiency, by several tens to hundreds of times compared to the supply amount of other raw material gases, that is, to increase the thermal decomposition efficiency. This disadvantage was compensated for by increasing the absolute amount of supply.
しかし、ＰＨ３の供給量の絶対量を多くすることは熱分
解効率の悪いＰＨ，はその一部しか結晶成長に寄与せず
、他の大部分は無駄になっていることを意味し、組成制
御が難しいという問題点を有していた。However, increasing the absolute amount of PH3 supplied means that only a part of PH, which has poor thermal decomposition efficiency, contributes to crystal growth, and most of the other part is wasted. The problem was that it was difficult to
一方、ダッチュミンら（Ｊ、 Ｐ、Ｄ＋Ｊｃｈｃｍｉｎ
ｅｔ ａｌ）はＰＨ３を分解炉を通してから気相成長
管に供給すると、分解炉中で予備分解されたＰＨ３によ
って結晶中のＰの比率が増加することをジャーナル・オ
ブ・クリスタルグロース（Ｊ、Ｃｒｙｓｔａｌ Ｇｒｏ
ｗｔｈ５５ ６４ １９８１）に報告している。On the other hand, Dachcmin et al. (J, P, D + Jchcmin
et al) reported in the Journal of Crystal Growth that when PH3 is supplied to a vapor growth tube after passing through a decomposition furnace, the proportion of P in the crystal increases due to the PH3 pre-decomposed in the decomposition furnace.
wth55 64 1981).
しかしながら、この方法では分解炉で予備分解されたＰ
が分解炉と成長反応管の間及び成長反応管壁に付着し、
また付着したＰが再蒸発することによって安定した組成
制御及び急峻な組成変化が出来ないという問題点を有し
ていた。However, in this method, the P pre-decomposed in the decomposition furnace
adheres to the space between the decomposition furnace and the growth reaction tube and to the growth reaction tube wall.
Further, there was a problem in that stable composition control and steep composition changes were not possible due to the re-evaporation of the deposited P.
そこで本発明は上記問題点を解決し、Ｐの安定した組成
制御及び急峻な組成変化の可能な熱分解気相成長方法を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a pyrolytic vapor phase growth method that allows stable composition control of P and rapid composition changes.
〔問題点を解決するための手段〕
本発明は少なくともリン（Ｐ）を含有する■族元素化合
物と■族元素化合物とを用いて■−■族化合物半導体結
晶の熱分解気相成長を行なうにあたり、リン供給原料ガ
スとしてジホスフィン（Ｐ２Ｈ４）を用いることを特徴
としている。[Means for Solving the Problems] The present invention provides methods for performing pyrolytic vapor phase growth of a ■-■ group compound semiconductor crystal using a group-■ element compound containing at least phosphorus (P) and a group-■ element compound. , is characterized by using diphosphine (P2H4) as the phosphorus feedstock gas.
ジホスフィンはボスフィンと比べて不安定な物質であり
、熱分解気＋１１成長炉内で、Ｇ ａ ＡｓやＩｎＰ等
の成長における通常の基板温度である５００℃〜８００
℃で容易に分解され、高い熱分解効率を示す。Diphosphine is an unstable substance compared to bosphine, and it is heated in a pyrolysis gas +11 growth furnace at 500°C to 800°C, which is the normal substrate temperature for growing GaAs, InP, etc.
It is easily decomposed at ℃ and exhibits high thermal decomposition efficiency.
また、基板温度を４００℃以下に設定すると、ホスフィ
ンはほとんど分解されなくなり、分解炉を用いないで成
長することは出来なかった。しがし、ジホスフィンを用
いることによって分解炉なしで成長することが可能であ
り、このことは熱に弱い構造を有する層上べの成長（例
えば超格子構造を用いた埋込みレーザ、急峻なヘテロ界
面を有する電界効果トランジスタの電極層の選択成長等
）を考えた場合に極めて有効である。Further, when the substrate temperature was set to 400° C. or lower, phosphine was hardly decomposed and growth could not be performed without using a decomposition furnace. However, by using diphosphine, it is possible to grow without a decomposition furnace, which means that the growth of layers with heat-sensitive structures (e.g., embedded lasers using superlattice structures, steep heterointerfaces, etc.) is possible. This is extremely effective when considering selective growth of electrode layers of field-effect transistors with
また、ジホスフィンは融点−９９℃、沸点５１．７℃と
室温で液体であり、通常の有機金属原料と同様な取扱い
が可能である。Further, diphosphine is a liquid at room temperature with a melting point of -99°C and a boiling point of 51.7°C, and can be handled in the same manner as ordinary organic metal raw materials.
実施例１
本発明の実施例１として、トリエチルインジウム（（Ｃ
２）（Ｓ）３ Ｉ ｎ ）とジホスフィ７（Ｐ２Ｈ４）
を用いて、熱分解気相成長法によりＩｎＰの成長を行っ
た。成長は横型熱分解気相成長炉を用い、常圧にて行っ
た。原料ガス流量はトリエチルインジウム３３ＣＣＭ、
ジホスフィン６３ＣＣＭとした。Example 1 As Example 1 of the present invention, triethylindium ((C
2) (S)3 I n ) and diphosphy7 (P2H4)
InP was grown using the pyrolysis vapor phase growth method. The growth was carried out at normal pressure using a horizontal pyrolysis vapor phase growth furnace. The raw material gas flow rate is triethyl indium 33CCM,
It was set as diphosphine 63CCM.
基板はＩ ｎ Ｐ （１００）面を用い、基板温度は６
５０℃とした。The substrate used was an I n P (100) plane, and the substrate temperature was 6
The temperature was 50°C.
その結果、鏡面性の良好なＩｎＰ成長層が得られた。As a result, an InP growth layer with good specularity was obtained.
ここで（Ｐ元素の供給量）／（Ｉｎ元素の供給量）は４
であり、ジホスフィンの分解効率がボスフィンと比べて
高いことがわかる。Here, (supply amount of P element)/(supply amount of In element) is 4
It can be seen that the decomposition efficiency of diphosphine is higher than that of bosphine.
本実施例ではＩｎＰの結晶成長について述べたが、本発
明による熱分解気相成長方法ではＩｎＧａＰ、ＩｎＧａ
ＡｓＰ、ＩｎＧａＡｓＰ等の混晶半導体結晶の成長にも
実施することが可能である。In this example, the crystal growth of InP was described, but in the pyrolytic vapor phase growth method according to the present invention, InGaP, InGa
It is also possible to carry out the growth of mixed crystal semiconductor crystals such as AsP and InGaAsP.
実施例２
本発明の実施例２として、トリエチルインジウム（（Ｃ
２Ｈ５１ｈ Ｉ ｎ ）とジホスフィ７（Ｐ２Ｈ４）を
用いて熱分解気相成長法によりＩｎｐの低温成長を行な
った。成長は横型熱分解気相成長炉を用い、７０Ｔｏｒ
ｒの減圧下にて行った。原料ガス流量はトリエチルイン
ジウム３３ＣＣＭ、ジホスフィン３０ＳＣＣＭとした。Example 2 As Example 2 of the present invention, triethylindium ((C
Inp was grown at low temperature by pyrolysis vapor phase growth using 2H51h I n ) and diphosphine 7 (P2H4). Growth was performed using a horizontal pyrolysis vapor phase growth furnace at 70 Torr.
The test was carried out under reduced pressure of r. The raw material gas flow rates were 33 CCM of triethyl indium and 30 SCCM of diphosphine.
基板ハＩ ｎ Ｐ （ＩＱＱ）面を用い、基板温度は４
００℃とした。The substrate has an I n P (IQQ) surface, and the substrate temperature is 4
The temperature was 00°C.
その結果、鏡面性の良好なＩｎＰ成長層が得られた。As a result, an InP growth layer with good specularity was obtained.
基板温度４００℃では、ホスフィンを用いた場合、分解
炉を用いないで成長を行なうことは出来ず、ジホスフィ
ンを用いることによって可能となった。At a substrate temperature of 400° C., growth could not be performed without using a decomposition furnace when phosphine was used, but it became possible by using diphosphine.
ここで（Ｐ元素の供給ｆｆ１）／（Ｉｎ元素の供給量）
は２０であり、実施例１のジホスフィンの分解効率より
は低下しているが、基板温度４００ ｔでも成長は可能
であった。Here, (supply of P element ff1)/(supply amount of In element)
was 20, which was lower than the diphosphine decomposition efficiency of Example 1, but growth was possible even at a substrate temperature of 400 t.
本実施例ではＩｎＰの結晶成長について述べたが、本発
明による熱分解気相成長方法ではＴｎＧａＰ、ＩｎＧａ
ＡｓＰ、ＩｎＧａＡｓＰ等の混晶半導体結晶の成長にお
いても、ホスフィンを用いた場合よりも成長温度を低温
化することが可能である。In this example, crystal growth of InP was described, but in the pyrolytic vapor phase growth method according to the present invention, TnGaP, InGa
Even in the growth of mixed semiconductor crystals such as AsP and InGaAsP, the growth temperature can be lowered than when phosphine is used.
以上の様に本発明の熱分解気相成長方法はリン元素供給
原料としてジホスフィンを用いることによって、従来の
ホスフィンを用いた場合と比べて熱分解効率を高くする
ことが可能である。また、従来法と比べて分解炉なしで
成長温度を低温化することが可能で、熱に弱い構造を有
する成長に極めて有益である。As described above, by using diphosphine as the phosphorus element feedstock, the pyrolysis vapor phase growth method of the present invention can increase the pyrolysis efficiency compared to the case where conventional phosphine is used. Furthermore, compared to conventional methods, it is possible to lower the growth temperature without using a decomposition furnace, which is extremely useful for growing structures that are sensitive to heat.
Claims (1)
とIII族元素化合物とを用いてIII−Ｖ族化合物半導体結
晶の熱分解気相成長を行なうにあたり、リン供給原料ガ
スとしてジホスフィン（Ｐ＿２Ｈ＿４）を用いることを
特徴とする熱分解気相成長方法。(1) Diphosphine (P_2H_4) is used as the phosphorus source gas when performing pyrolytic vapor phase growth of III-V group compound semiconductor crystal using a group V element compound and a group III element compound containing at least phosphorus (P). A pyrolytic vapor phase growth method characterized by using.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25968985A JPS62123099A (en) | 1985-11-21 | 1985-11-21 | Pyrolytic vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25968985A JPS62123099A (en) | 1985-11-21 | 1985-11-21 | Pyrolytic vapor growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62123099A true JPS62123099A (en) | 1987-06-04 |
| JPH0341438B2 JPH0341438B2 (en) | 1991-06-24 |
Family
ID=17337550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25968985A Granted JPS62123099A (en) | 1985-11-21 | 1985-11-21 | Pyrolytic vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123099A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120676A (en) * | 1990-03-23 | 1992-06-09 | Cvd Incorporated | Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping |
-
1985
- 1985-11-21 JP JP25968985A patent/JPS62123099A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120676A (en) * | 1990-03-23 | 1992-06-09 | Cvd Incorporated | Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0341438B2 (en) | 1991-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Moss | Adducts in the growth of III–V compounds | |
| JPS62123099A (en) | Pyrolytic vapor growth method | |
| EP0524817B1 (en) | Crystal growth method of III - V compound semiconductor | |
| JPH0754802B2 (en) | Vapor growth method of GaAs thin film | |
| JPH0431396A (en) | Growth of semiconductor crystal | |
| JP3406504B2 (en) | Semiconductor manufacturing method | |
| JP2879224B2 (en) | Metalorganic vapor phase epitaxy | |
| JPH0243332B2 (en) | ||
| JP2661155B2 (en) | Vapor phase epitaxial growth method | |
| JPH0536397B2 (en) | ||
| JPS6131393A (en) | Vapor phase growth device | |
| JPS62213253A (en) | Crystal growth | |
| JP2952831B2 (en) | Method for manufacturing semiconductor device | |
| KR840008531A (en) | Tetramethyltin additive source for metal organic chemical vapor deposition (MOCVD) growth epitaxial semiconductor layers | |
| JPS63227007A (en) | Vapor growth method | |
| JPS60245214A (en) | Vapor growth of compound semiconductor crystal | |
| JPS61202422A (en) | Vapor growth method for compound semiconductor | |
| JP2700210B2 (en) | Vapor phase epitaxial growth of compound semiconductors | |
| JPS61205696A (en) | Vapor-phase crystal growth system for group iii-v compounds | |
| JPS61229320A (en) | Vapor growth device | |
| JPH0451520B2 (en) | ||
| JPH01197398A (en) | Method for vapor growth | |
| JPH0697656B2 (en) | Vapor phase epitaxial growth method | |
| JPS61220420A (en) | Vapor growth apparatus | |
| JPH0369879B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |