JPS6197862A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6197862A JPS6197862A JP21988884A JP21988884A JPS6197862A JP S6197862 A JPS6197862 A JP S6197862A JP 21988884 A JP21988884 A JP 21988884A JP 21988884 A JP21988884 A JP 21988884A JP S6197862 A JPS6197862 A JP S6197862A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- diode
- emitter
- base
- switching speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000003321 amplification Effects 0.000 abstract description 15
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
産ｌユＪ夏Ｕ帽土此
この発明は各種電源回路等に使用される電力増幅用の半
導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a semiconductor device for power amplification used in various power supply circuits and the like.
従来至圧丑
テレビジョン受像機のＣＲＴドライブ回路などの各種電
源回路に使用される電力増幅用トランジスタ回路はその
電流増幅率ｈｉに大きなものが要求されるので、通常は
トランジスタを複数個ダーリントン接続したダーリント
ントランジスタ回路が使用されている。このダーリント
ントランジスタ回路は、１つの素子内で形成することが
可能であり、１つの半導体基板に複数のトランジスタや
抵抗を形成してＡｊ２配線にて接続した半導体装置とし
て実用化され、その基本例を第４図の等価回路を参照し
て以下説明する。Conventional transistor circuits for power amplification used in various power supply circuits such as the CRT drive circuit of television receivers require a large current amplification factor hi, so usually multiple transistors are connected in Darlington. A Darlington transistor circuit is used. This Darlington transistor circuit can be formed within one element, and has been put to practical use as a semiconductor device in which multiple transistors and resistors are formed on one semiconductor substrate and connected by Aj2 wiring. This will be explained below with reference to the equivalent circuit shown in FIG.
第４図において、Ｔｒｌ及びＴ ｒ ２はＮＰＮ型の第
１及び第２トランジスタで、この両者はダーリントン接
続、Ｗち両者のコレクタＣ１、Ｃ２を共通にして、第１
トランジスタＴ ｒ １のエミッタＥ１を第２トランジ
スタＴ ｒ ２のベースＢ２に接続する。Ｒ１及びＲ２
は第１及び第２トランジスタＴｒ１ 、Ｔｒ２の各ベー
ス・エミッタ間に接続された第１及び第２抵抗で、共に
半導体抵抗である。（１）は上述トランジスタＴｒ１、
Ｔｒ２及び抵抗Ｒ，、Ｒ２が形成された半導体基板であ
る。In FIG. 4, Trl and Tr 2 are NPN type first and second transistors, both are Darlington-connected, and their collectors C1 and C2 are common, and the first
The emitter E1 of the transistor T r 1 is connected to the base B2 of the second transistor T r 2. R1 and R2
are first and second resistors connected between the respective bases and emitters of the first and second transistors Tr1 and Tr2, both of which are semiconductor resistors. (1) is the above-mentioned transistor Tr1,
This is a semiconductor substrate on which a Tr2 and resistors R, , R2 are formed.
このようなダーリントントランジスタ回路（２）のｈＦ
Ｅは第１トランジスタＴ ｒ １のベース入力端（３）
に入る入力電流Ｉ８と第２トランジスタ７ｒ２のエミッ
タ出力端（４）の出力電流１ｃの比で近似され、これは
第１、第２トランジスタＴｒｌ 、Ｔｒ２の各々の電流
増幅率をｈＦＥｌ 、ｈＦＥ２とすると
ｈＦＥ””ｈＦＥｌ ×ｈＦＥ２
で表されることが知られている。hF of such Darlington transistor circuit (2)
E is the base input terminal (3) of the first transistor T r 1
It is approximated by the ratio of the input current I8 input to the emitter output terminal (4) of the second transistor 7r2 and the output current 1c of the emitter output terminal (4) of the second transistor 7r2. It is known that hFE is expressed as hFE1×hFE2.
号 ゛ しよ゛と る四
ところで、上記のようなダーリントントランジスタ回路
は、簡単な回路で高いｈＦＥが得られることから、各種
電源回路に賞月されているが、ｈＦＥが高くなる程にス
イッチング速度が低下することが知られている。このス
イッチング速度低下は電力増幅用トランジスタ単体のも
のでも見られる一般的傾向である。そのため、電力増幅
用トランジスタを単体で、又は複数をダーリントン接続
して電源回路に使用した場合、テレビジョン受像機のＣ
ＲＴドライブ回路の水平出力段などのように高い応答性
が求められる回路においては問題が多くて改善策が要望
されていた。By the way, the Darlington transistor circuit described above has been prized for various power supply circuits because it can obtain high hFE with a simple circuit, but the higher the hFE, the lower the switching speed. is known to decrease. This reduction in switching speed is a general tendency that can be observed even in a single power amplification transistor. Therefore, if a single power amplifying transistor or multiple Darlington-connected power amplifying transistors are used in the power supply circuit, the television receiver's C
There are many problems in circuits that require high responsiveness, such as the horizontal output stage of an RT drive circuit, and improvements have been desired.
ｐ 占 ° るた の
本発明は上記電力増幅用トランジスタを含む回路のスイ
ッチング速度を向上させることを目的とし、電力増幅用
トランジスタ回路の出力端から入力端に順方向にダイオ
ードを接続することにより上記目的を達成したものであ
る。The purpose of the present invention is to improve the switching speed of a circuit including the power amplification transistor, and to improve the switching speed of a circuit including the power amplification transistor by connecting a diode in the forward direction from the output end to the input end of the power amplification transistor circuit. The purpose has been achieved.
即ち、電力増幅用トランジスタはｈＦＥを大きくする程
、動作時にエミッタの多数キャリアである電子がベース
に滞留する率が高くなり、これがスイッチング速度を遅
くするといった構造上の基本的特性を持つことが知られ
ている。そこで上記手段のようなダイオードを電力増幅
用トランジスタ回路に付設してダイオードを介しトラン
ジスタのベースに滞留した電子を積極的にエミッタに戻
すことにより、スイッチング速度が上がり、上記従来問
題点が解決される。In other words, it is known that a power amplification transistor has a fundamental structural characteristic that the larger the hFE, the higher the rate at which electrons, which are the majority carriers of the emitter, remain in the base during operation, which slows down the switching speed. It is being Therefore, by attaching a diode like the above means to the power amplification transistor circuit and actively returning the electrons accumulated in the base of the transistor to the emitter via the diode, the switching speed can be increased and the above conventional problems can be solved. .
皇１皿
本考案の一実施例を第１図及び第２図に基づき説明する
と、ＴｒはＮＰＮ型の電力増幅用トヘ
ランジスタ、ＲはトランジスタＴｒのベース・エミッタ
間に接続された抵抗（半導体抵抗）であり、本考案の特
徴はこのトランジスタＴｒと抵抗Ｒからなる一般的トラ
ンジスタ回路（５）におけるトランジスタＴｒのエミッ
タ端子（６）とベース入力端子（７）の間にＰＮ接合に
ついて逆方向が順方向のダイオードＤＩを接続すること
である。（８）はトランジスタＴ ｒ ％抵抗Ｒ１ダイ
オードＤ１及び必要に応じトランジスタＴｒのエミッタ
・コレクタ間に接続した一般的なダンパーダイオードＤ
°が形成された半導体基板である。半導体基板（８）に
おける前記ダイオードＤ１は第２図に示すようにＮＰＮ
型トランジスタＴｒのベース領域（９）のエミッタ領域
（１０）の近（にＮ型不純物領域（１１）を形成して作
成すればよい。An embodiment of the present invention will be explained based on FIGS. 1 and 2. Tr is an NPN type transistor transistor for power amplification, and R is a resistor (semiconductor resistor) connected between the base and emitter of the transistor Tr. ), and the feature of the present invention is that in a general transistor circuit (5) consisting of a transistor Tr and a resistor R, there is a PN junction between the emitter terminal (6) and the base input terminal (7) of the transistor Tr, in which the reverse direction is normal. It is to connect the diode DI in the direction. (8) is a general damper diode D connected between the emitter and collector of the transistor Tr %, the resistor R1, the diode D1, and the emitter and collector of the transistor Tr, if necessary.
This is a semiconductor substrate on which . The diode D1 in the semiconductor substrate (8) is an NPN as shown in FIG.
The N-type impurity region (11) may be formed near the emitter region (10) of the base region (9) of the type transistor Tr.
上記トランジスタ回路（５）においてはトランジスタＴ
ｒが動作するとベースＢに滞留しかけた電子がダイオー
ドＤ１を通り直ちにエミッタＥに流れるのでスイッチン
グ速度が向上する。In the above transistor circuit (5), the transistor T
When r is activated, electrons that are about to stay in the base B pass through the diode D1 and immediately flow to the emitter E, improving the switching speed.
次に第４図のダーリントントランジスタ回路（２）に本
考案を適用したその他の実施例を第３図に基づき説明す
る。この場合は第１トランジスタＴｒ１のベース入力端
子（３）と第２トランジスタＴｒ２のエミッタ端子（４
）の間に、前述の実施例同様なダイオードＤ２を追加接
続するだけで、第１図の場合と同じ原理でスイッチング
速度を向上させることができる。尚、第３図の破線の（
１２）は各トランジスタＴ ｒ １、Ｔ ｒ ２ 、抵
抗Ｒ，Ｒ２、そして上記ダイオードＤ２が形成された半
導体基板を示す。Next, another embodiment in which the present invention is applied to the Darlington transistor circuit (2) shown in FIG. 4 will be described based on FIG. 3. In this case, the base input terminal (3) of the first transistor Tr1 and the emitter terminal (4) of the second transistor Tr2
), simply by additionally connecting a diode D2 similar to the previous embodiment, the switching speed can be improved using the same principle as in the case of FIG. In addition, the broken line (
12) shows a semiconductor substrate on which transistors T r 1 and T r 2 , resistors R and R2, and the diode D2 are formed.
発旦皇立来
本発明によれば電力増幅用トランジスタ回路のスイッチ
ング速度が大幅に向上するので、スイッチング速度に制
限を受けること無く電流増幅率を上げる等することがで
き、通用分野の広い半導体装置が提供できる。According to the present invention, the switching speed of the power amplification transistor circuit is greatly improved, so the current amplification factor can be increased without being limited by the switching speed, and the semiconductor device can be used in a wide range of fields. can be provided.
第１図及び第２図は本発明の一実施例を示す半導体装置
の等価回路図及び半導体基板の概略断面図、第３図は本
発明の他の実施例を示す半導体装置の等価回路図、第４
図は従来の半導体装置の等価回路図である。
Ｔｒ、Ｔｒｌ 、Ｔｒ２ ・−＝）ランジスタ、Ｄ！、
Ｄ２・−・・ダイオード、 （２）、 （５）・−・・
・電力増幅用トランジスタ回路、（６）・−・出力端子
（エミッタ端子）、（７）・−・入力端子（ベース端子
）、（８）、（１２） −・半導体基板。1 and 2 are an equivalent circuit diagram of a semiconductor device and a schematic cross-sectional view of a semiconductor substrate showing one embodiment of the present invention, and FIG. 3 is an equivalent circuit diagram of a semiconductor device showing another embodiment of the present invention, Fourth
The figure is an equivalent circuit diagram of a conventional semiconductor device. Tr, Trl, Tr2 ・-=) transistor, D! ,
D2...Diode, (2), (5)...
- Transistor circuit for power amplification, (6) --- Output terminal (emitter terminal), (7) --- Input terminal (base terminal), (8), (12) --- Semiconductor substrate.
Claims (1)
トランジスタ回路の出力端子から入力端子に順方向に接
続されたダイオードを形成したことを特徴とする半導体
装置。(1) A semiconductor device characterized in that a power amplifying transistor circuit and a diode connected in a forward direction from an output terminal to an input terminal of the transistor circuit are formed on a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21988884A JPS6197862A (en) | 1984-10-18 | 1984-10-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21988884A JPS6197862A (en) | 1984-10-18 | 1984-10-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197862A true JPS6197862A (en) | 1986-05-16 |
Family
ID=16742616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21988884A Pending JPS6197862A (en) | 1984-10-18 | 1984-10-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197862A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5349230A (en) * | 1990-12-28 | 1994-09-20 | Fuji Electric Co., Ltd. | Diode circuit for high speed switching transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321579A (en) * | 1976-08-11 | 1978-02-28 | Matsushita Electronics Corp | Darlington transistor |
| JPS57176761A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Compound semiconductor device |
-
1984
- 1984-10-18 JP JP21988884A patent/JPS6197862A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321579A (en) * | 1976-08-11 | 1978-02-28 | Matsushita Electronics Corp | Darlington transistor |
| JPS57176761A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Compound semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5349230A (en) * | 1990-12-28 | 1994-09-20 | Fuji Electric Co., Ltd. | Diode circuit for high speed switching transistor |
| US5469103A (en) * | 1990-12-28 | 1995-11-21 | Fuji Electric Co., Ltd. | Diode circuit for high speed switching transistor |
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