JPS6193654A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

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Publication number
JPS6193654A
JPS6193654A JP59214191A JP21419184A JPS6193654A JP S6193654 A JPS6193654 A JP S6193654A JP 59214191 A JP59214191 A JP 59214191A JP 21419184 A JP21419184 A JP 21419184A JP S6193654 A JPS6193654 A JP S6193654A
Authority
JP
Japan
Prior art keywords
solder
semiconductor element
section
mounting
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59214191A
Other languages
English (en)
Inventor
Yoshimasa Kudo
工藤　好正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59214191A priority Critical patent/JPS6193654A/ja
Publication of JPS6193654A publication Critical patent/JPS6193654A/ja
Pending legal-status Critical Current

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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  • Die Bonding (AREA)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は樹脂封止型半導体装置、特に放熱部を備えた小
型、薄型パワーＩＣに関する。
〔発明の技術的背景〕
従来、パワーＩＣには放熱部が設けられており、例えば
第７図（斜視図）、第８図（側面図）及び第９図Ｃ部分
拡大図）に示すように樹脂製外囲器（１）と、この外囲
器（１）内を貫通し側方乃至下方に折れ曲って突出した
金属基板（２）とリード（３）とを有するパワーＩＣ例
である。この金属元板（２）は熱伝導度の良い銅系材料
からなり、その中央部に形成された半田のぬれをよくす
る表面めっき部（５）上に半田（６）付けされた半導体
素子（４）の発熱を外部に放熱するためのものである。
また、半導体素子（４）の回路を動作させるためにその
回路から複数の内部リードにワイヤボンディングすると
共にパワーＩＣがもつ高出力特性安定のために金属基板
（２）にグランドボンディング（７）が施される。また
、素子材料と金属基板（２）の銅系材料とは熱膨張率が
７倍近く違うため、マウント材としては、共晶合金（）
ｌａｒｄ　５ｏｌｄｅｒ）や樹脂接着剤では、素子のク
ラックの原因となること及び熱伝導性の上から半田（Ｓ
ｏｆｔ　５ｏｌｄｅｒ）材（６）が使用される。
〔背景技術の問題点〕
従来、金属基板（２）にグランドボンディング（７）を
行う場合、第８図、第９図に示すようにマウント材の半
田（６）がマウン時のスクラブにより素子（４）の周辺
にはみ出し、ボンディング位置（７Ａ）まで流れ、ボン
ディング不良をひきおこす問題があった。その改善の為
にマウント部とボンディング位置との間に刻印（数条の
溝を設ける）を施し、半田の流れを止める方法が取られ
た。また刻印のかわりに貫通穴（長穴や丸穴）を施す場
合もあった。
しかし最近、ＩＣを組込まれる機器の小型化に伴ない、
パワーＩＣの分野でもパッケージの超小型化、薄型化が
要求されている。そのため、リード、金属基板を含め板
厚を薄くすることが必要条件となってきた。それ故、前
記の刻印の方法では板厚が薄いため刻印を深くできず、
半田の流れを止める効果が少ない欠点があった。また無
理に深くした場合は薄板のために金属基板に変形が生じ
る問題があった。貫通穴の場合は薄板化になっても加工
上問題はないが小型化と放熱効果を考えると穴を明ける
スペースが得難く半田流れを完全に止めることは不可能
であった。
金属基板構造パッケージの放熱性を理論計算で説明する
と次の通りとなる。熱抵抗をＲｔｈ、λを熱が通過する
物体の熱伝導率、Ａを熱が通過する物体の断面積、Ｑを
熱が通過する距離とすると熱抵抗Ｒｔｈは、Ｒｔｈ＝　
”で表わされる。そしてλＡ 熱抵抗（Ｒｔｈ）が大きくなれば放熱性は悪くなる。
板厚を薄くすることは断面積を小にすることになり放熱
効果が悪くなる。貫通穴を明けることはもちろん、刻印
を入れることも部分的に断面が小になり、パワーＩＣの
小型化につれて熱抵抗が大きくなり放熱効果は悪くなり
好ましくない。
〔発明の目的〕
本発明は小型パワーＩ　Ｃ（Ｓｍａｉｌ　Ｏｕｔ−１ｉ
ｎｅＰａｃｋａｇｅ、　Ｐｏｗｅｒ　Ｆｌａｔ　Ｐａｃ
ｋａｇｅ）の放熱効果を下げることなく、マウント時の
半田流れを所定の場所で止めグランドボンディングのボ
ンディング不良を改善することを目時とする。
〔発明の概要〕
本発明は金属基板のマウント部とグランドボンディング
部との間にめっき不着部を形成し、半田に対する銅素子
面とめっき上面の半田のぬれ性の違いを利用しマウント
時の半田の流れをめっき不着部で止めるようにして前記
改善の目的を達成したものである。
〔発明の実施例〕
第１図は本発明の一実施例の要部を示す平面図、第２図
はその側面図、第３図は第２図の一部の拡大図で、第４
図は全貌を示す斜視図である。また第５図は本発明の他
の実施例の全貌を示す斜視図。
第６図は第５図の内部構造を示す平面図である。
これらの図においては第７図乃至第９図と同一部分には
同一番号を付は類似部分には添字を付加して示しである
。
第１図乃至第４図、第５図、第６図に示す実施例におけ
る特徴は、鋼材からなる金属基板（２）上の半導体素子
（４）のマウント部に、半田（６）を介して半導体素子
（４）が確実且つ安定した接合が可能になるように金又
は銀めっき（５ａ）を、またグランドボンディングが良
好に行なえるように金又は銀のめっき（５ｂ）を行うが
、その際、両めっき部間が不連続になるように分離帯（
めっき不着部）（１０）が形成される。こけ分離帯はめ
っき用マスクを加工して、リードフレームめっき作業中
にリードフレーム加工の一貫作業として作ることができ
、リードフレームを低コストで量産的に供給できる。そ
の他、工程数は増えるが金属基板上面全体にめっきをし
てから分離帯を化学的に除去して形成する方法もある。
〔発明の効果〕
本発明は以上のようになるものであって、ｉ）マウン部
とグランドホンディング部との間に設けためっき不着部
により、マウント時のスクラブ等で広がった半田の流れ
がめつき不着部で止まるので、それに原因するグランド
ボンディング不良をなくすことができる。ｉｉ）パワー
ＩＣの必要条件である放熱性に対し、前記従来技術で述
べた問題点の軽減により小型化、薄型化パワーＩＣの供
給が可能となる。ｉｕ）金属基板構造のパワーＩＣは従
来から樹脂と金属基板の接触部から水が浸入し易く、耐
湿性の劣化を招くという問題があったが。
前記のめっき不着部（銅の素材面）がマウントボンディ
ング工程等の加熱で酸化され酸化銅となり。
この酸化鋼と樹脂材との密着性が良好なため耐湿性の向
上も得られる。等の効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例を示す平面図、第２図は第１
図の側面図、第３図は第２図の一部の拡大図、第４図は
装置の全貌を示す斜視図、第５図は本発明の他の実施例
の全貌を示す斜視図、第６図は第５図の内部構造を示す
平面図、第７図乃至第９図は従来例を示し、第７図は斜
視図、第８図は側面図、第９図は部分拡大図である。 １：樹脂製外囲器、２：金属基板、３：外部リード、４
：半導体素子、５．５ａ、　５ｂ、　５ｃ：めっき部。 ６：半田、７，７ａ：ワイヤーボンディング、９：内部
リード、１０：めっき不着部。

Claims (1)

    【特許請求の範囲】
  1. 　半導体素子を固着するマウント部と放熱部および両者
    を連結する伝熱部とを有する金属基板と、この金属基板
    の前記マウント部およびそのマウント部と所定の間隔離
    間した前記伝熱部に設けられためっき層と、前記マウン
    ト部に前記めっき層を介して半田で固着された半導体素
    子と、この半導体素子の電極に接続された複数のリード
    と、前記半導体素子の電極と前記伝熱部のめっき層に接
    続された導電性細線と、前記金属基板のマウント部、伝
    熱部、半導体素子、導電性細線および複数のリードの前
    記電極に接続された端部を封止する樹脂製外囲器とを具
    備することを特徴とする樹脂封止型半導体装置。
JP59214191A 1984-10-15 1984-10-15 樹脂封止型半導体装置 Pending JPS6193654A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59214191A JPS6193654A (ja) 1984-10-15 1984-10-15 樹脂封止型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59214191A JPS6193654A (ja) 1984-10-15 1984-10-15 樹脂封止型半導体装置

Publications (1)

Publication Number Publication Date
JPS6193654A true JPS6193654A (ja) 1986-05-12

Family

ID=16651746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59214191A Pending JPS6193654A (ja) 1984-10-15 1984-10-15 樹脂封止型半導体装置

Country Status (1)

Country Link
JP (1) JPS6193654A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005281A (ja) * 2004-06-21 2006-01-05 Nippon Inter Electronics Corp リードフレーム及びその製造方法並びに樹脂封止型半導体装置
JP2011014713A (ja) * 2009-07-02 2011-01-20 Mitsubishi Electric Corp 半導体装置
US8398512B2 (en) 2007-04-30 2013-03-19 Miba Sinter Austria Gmbh Toothed belt pulley

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553641A (en) * 1978-06-23 1980-01-11 Hitachi Ltd Lead frame

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553641A (en) * 1978-06-23 1980-01-11 Hitachi Ltd Lead frame

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005281A (ja) * 2004-06-21 2006-01-05 Nippon Inter Electronics Corp リードフレーム及びその製造方法並びに樹脂封止型半導体装置
JP4537774B2 (ja) * 2004-06-21 2010-09-08 日本インター株式会社 リードフレームの製造方法
US8398512B2 (en) 2007-04-30 2013-03-19 Miba Sinter Austria Gmbh Toothed belt pulley
JP2011014713A (ja) * 2009-07-02 2011-01-20 Mitsubishi Electric Corp 半導体装置

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