JPS618981A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS618981A JPS618981A JP59130408A JP13040884A JPS618981A JP S618981 A JPS618981 A JP S618981A JP 59130408 A JP59130408 A JP 59130408A JP 13040884 A JP13040884 A JP 13040884A JP S618981 A JPS618981 A JP S618981A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting region
- type
- island shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は半導体発光素子、特に面発光型発光素子の発
光領域の構造に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a structure of a light emitting region of a semiconductor light emitting device, particularly a surface emitting type light emitting device.
（従来の技術）
従来から種々の構造の半導体発光素子が提案されている
。第２図は従来公知の面発光型半導体発光素子の一例で
あるＡＱＧａＡｓ／（ｉａＡｓダブルへテロ構造の発光
ダイオ７ドを示す断面図である。この発光ダイオードは
ｐ−ＧａＡｓ基板２０上にｎ −ＧａＡｓ電流狭窄層（
ブロッキング層ともいう） ２１を有し、その窓２１ａ
の所で基板面２０ａが露出している。(Prior Art) Semiconductor light emitting devices with various structures have been proposed in the past. FIG. 2 is a sectional view showing an AQGaAs/(iaAs double heterostructure light emitting diode 7, which is an example of a conventionally known surface-emitting type semiconductor light emitting device. GaAs current confinement layer (
(also referred to as a blocking layer) 21, and its window 21a
The substrate surface 20a is exposed at this point.
この電流狭窄層２１及び露出基板面２０ａ上に順次にｐ
−ＡＱ ｘＧａｔ−ｘＡｓの第一クラッド層２２、Ａ
ＱｙＧａ７−ｙＡｓの活性層２３． ｎ一層ｚＧａｚ
−ｚＡｓの第二クラッド層２４、ｎ−ＧａＡｓのキャッ
プ層２５が形成されている。On this current confinement layer 21 and the exposed substrate surface 20a, p
-AQ xGat-xAs first cladding layer 22, A
QyGa7-yAs active layer 23. n tier zGaz
A second cladding layer 24 of -zAs and a cap layer 25 of n-GaAs are formed.
この活性層２３はｐ型、ｎ型ヌはノンドープ型のいずれ
であっても良い。また、混晶の組成比Ｘ。This active layer 23 may be either a p-type or a non-doped n-type. Also, the composition ratio X of the mixed crystal.
ｙ、ｚの間にはｙ＜ｘ 、ｙ＜ｚの関係がある。また、
キャップ層２５は発光領域２６から発光した先を取り出
すための光取り出し窓２５ａが形成されている。尚、２
７はキヤ・ンプ層２５と、基板２０との間にバイアス電
圧を印加するための電源である。There is a relationship between y and z: y<x, y<z. Also,
A light extraction window 25a is formed in the cap layer 25 to take out the light emitted from the light emitting region 26. Furthermore, 2
Reference numeral 7 denotes a power source for applying a bias voltage between the cap layer 25 and the substrate 20.
このような構造の従来の発光素子の特色は発光領域２６
の寸法りを出来るだけ広くとることにより所定の駆動電
流Ｉに対し発光領域２６での電流密度を下げようとする
ものであった。A feature of a conventional light emitting device having such a structure is that the light emitting region 26
By making the dimensions as wide as possible, the current density in the light emitting region 26 is lowered for a given drive current I.
このように発光領域を広げる理由は次のように考えられ
る。発光領域２８に結晶欠陥によるダークスポット欠陥
（ＤＳＤ）がもともと存在しており、これらダークスポ
ット欠陥（ＤＳＤ）が発振光を吸収して増殖し線状欠陥
（ＤＬＩＩ）へと進展していくというメカニズムで発光
素子が劣化する。この欠陥増殖の速さは発光領域での電
流密度に強く依存する。The reason for expanding the light emitting area in this way is considered to be as follows. Dark spot defects (DSD) due to crystal defects originally exist in the light emitting region 28, and the mechanism is that these dark spot defects (DSD) absorb oscillation light, multiply, and develop into linear defects (DLII). The light emitting element deteriorates. The speed of this defect growth strongly depends on the current density in the light emitting region.
従って、発光素子の長寿命化を図ろうとするために、発
光領域の面積を出来るだけ広げて電流密度を低減させる
ことが効果的であると考えられるからである。Therefore, in order to extend the life of the light emitting element, it is considered effective to widen the area of the light emitting region as much as possible to reduce the current density.
（発明が解決しようとする問題点）
しかしながら、発光領域を広げることの出来る範囲も限
界があり、従って、発光素子の長寿命化もそれほど期待
出来ないという欠点があった。(Problems to be Solved by the Invention) However, there is a limit to the range in which the light emitting region can be expanded, and therefore, there is a drawback that a long life of the light emitting element cannot be expected to be very long.
この発明の目的は、発光素子の接合部の構造を工夫する
という、従来方法メは全く別の手段により、発光素子の
長寿命化を図った半導体発光素子を提供することにある
。An object of the present invention is to provide a semiconductor light-emitting device that extends the life of the light-emitting device by a completely different method than the conventional method of devising the structure of the joint portion of the light-emitting device.
（問題点を解決するための手段）
この目的の達成を図るため、この発明によれば、発光領
域を非発光領域でそれぞれ取囲まれた複数個の微細な島
状発光領域で構成したことを特徴とする。(Means for Solving the Problem) In order to achieve this object, according to the present invention, the light emitting region is composed of a plurality of fine island-like light emitting regions each surrounded by a non-light emitting region. Features.
（作用）
このように構成すれば、一つの半導体発光素子の発光領
域を微細の島状発光領域に細分化し、これら−個一個の
島状発光領域が微細な島状発光素子を形成する構造であ
るから、各島状発光領域の寸法を結晶欠陥の存在を無視
出来る程度の大きさとすることが出来ると共に、非発光
領域によって隣接する島状発光領域に結晶欠陥に伝播を
防ぐことが出来る、従って、発光素子の劣化の防止を図
ることが出来１発光素子の長寿命化を図ることが出来る
。(Function) With this structure, the light emitting area of one semiconductor light emitting element is subdivided into fine island-like light emitting areas, and each of these island-like light emitting areas forms a fine island-like light emitting element. Therefore, the dimensions of each island-like light-emitting region can be made large enough to ignore the presence of crystal defects, and the non-light-emitting region can prevent the crystal defects from propagating to the adjacent island-like light-emitting region. , it is possible to prevent deterioration of the light emitting element and to extend the life of the light emitting element.
（実施例）
以下、図面を参照して、この発明の実施例につき説明す
る。(Embodiments) Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図（Ａ）はこの発明の半導体発光素子の一実施例の
一部分を示す路線的平面図であり、第１図（Ｂ）はその
Ａ−Ａ線の断面図である。FIG. 1(A) is a schematic plan view showing a portion of an embodiment of the semiconductor light emitting device of the present invention, and FIG. 1(B) is a sectional view taken along the line A--A.
第１図（Ａ）及び（Ｂ）に示す実施例では、ｌはｐ１型
基板、２はｎ型電流狭窄層、３はｐ型筒−クラッド層、
４は活性層、５はｎ型第二クラッド層、６はｎ型キャッ
プ層、及び７は電源で、基本的には第２図の構造と同一
である。In the embodiment shown in FIGS. 1(A) and (B), l is a p1 type substrate, 2 is an n type current confinement layer, 3 is a p type tube-cladding layer,
4 is an active layer, 5 is an n-type second cladding layer, 6 is an n-type cap layer, and 7 is a power source, which is basically the same as the structure shown in FIG. 2.
この発明によれば、−個の半導体発光素子の、第１図（
Ａ）に破線８で示す本来有効的な発光領域内に離散的に
複数個の微細な島状発光領域９ａ、８ｂ。According to the present invention, - semiconductor light emitting devices shown in FIG.
In A), a plurality of fine island-like light emitting regions 9a, 8b are discretely provided within the originally effective light emitting region indicated by the broken line 8.
９ｃ、９ｄ、９ｅ、９ｆ、 ＠争・に細分化し、これら
各島状発光領域９ａ〜９Ｆ、・・・の周囲を非発光領域
でそれぞれ取囲んだ構造とする。これら微細な島状発光
領域８ａ〜９ｆ、・・・の各々をｎ型電流狭窄層２、ｐ
型筒−クラッドＭ３、活性層４、ｎ型第二クラッド層５
、ｎ型キャップ層６から成る独立した微細な島状発光素
子で形成するので、電流狭窄層２とこれに隣接する基板
ｌ及び第一クラッド層３の導電型がｐｎｐ構造となるの
で、バイアス電圧を印加した時このｐｎｐ構造の所では
電流が流れないので、非発光領域を各島状発光素子に周
囲の電流狭窄層？で形成することが出来る。It is subdivided into 9c, 9d, 9e, 9f, and 2, and each of these island-like light-emitting regions 9a to 9F, . . . is surrounded by a non-light-emitting region. Each of these fine island-like light emitting regions 8a to 9f, . . .
Mold cylinder - cladding M3, active layer 4, n-type second cladding layer 5
, the conductivity type of the current confinement layer 2, the substrate l adjacent thereto, and the first cladding layer 3 is a pnp structure, so that the bias voltage can be reduced. When a current is applied, no current flows in this pnp structure, so the non-light-emitting region is connected to each island-like light-emitting element by a surrounding current confinement layer. It can be formed with.
次に、Ａ−Ａ線に沿って測ったときの島状発光領域８ａ
〜９ｃ及び非発光領域の寸法ｄ１及びｄ２につき説明す
る。Next, the island-shaped light emitting region 8a when measured along the line A-A
~9c and the dimensions d1 and d2 of the non-light emitting region will be explained.
発光領域内に結晶欠陥が一個でも存在すると、素子劣化
の原因となるので、島状発光領域９ａ、８ｂ。If even one crystal defect exists in the light emitting region, it will cause deterioration of the device, so the island-shaped light emitting regions 9a, 8b.
８ｃの寸法ｄ１は出来るだけ小さくし、結晶欠陥が入り
込む確率を低減することが必要である。従っ 。It is necessary to make the dimension d1 of 8c as small as possible to reduce the probability of crystal defects entering. Follow.
て、通常は寸法ｄ、を５０〜１０ｐＬｆｆｌ程度とする
のが好適である。Therefore, it is usually preferable that the dimension d is approximately 50 to 10 pLffl.
一方、非発光領域すなわち隣接する島状発光領域間の寸
法ｄ２は、かりに島状発光領域９ａ、８ｂ、９ｃに結晶
欠陥が発生しても、隣接する島状発光素子にこの欠陥が
伝播して前述したダークスポット欠陥から線状欠陥へと
増殖するのを防止出来る程度の大きさ、例えば、通常は
１０Ｂｍ以上とするのが好適である。On the other hand, the dimension d2 between non-light-emitting regions, that is, adjacent island-like light-emitting regions, is such that even if a crystal defect occurs in the island-like light-emitting regions 9a, 8b, and 9c, this defect will propagate to the adjacent island-like light-emitting elements. It is preferable that the size is such that it can prevent the aforementioned dark spot defects from multiplying into linear defects, for example, usually 10 Bm or more.
上述した実施例では、微細な島状発光領域を平面的に見
た場合円形に形成した例を示したが、これに限定される
ものではなく、結晶欠陥が入り込む確率を低減させかつ
隣接する各島状発光領域間で欠陥の伝播を抑えることが
出来る形状であれば任意の形状であって良い。In the above-mentioned embodiment, an example was shown in which the fine island-like light-emitting region was formed into a circular shape when viewed in plan, but the invention is not limited to this, and the probability of crystal defects entering is reduced and each adjacent The shape may be any shape as long as it can suppress the propagation of defects between the island-shaped light emitting regions.
また、上述した半導体発光素子の基板の導電型をｐ型と
したが、ｎ型基板を用い、これに伴ないその上側に積層
する各層の導電型を反対導電型として構成することが出
来る。Further, although the conductivity type of the substrate of the semiconductor light emitting device described above is p-type, it is also possible to use an n-type substrate so that the conductivity types of each layer laminated above the n-type substrate are opposite conductivity types.
さらに、基板状に積層する発光に寄与する層構造は上述
した図示の構造のものに限定されるものではなく、どの
ような構造であっても良い。Furthermore, the layer structure that contributes to light emission and is laminated in the shape of a substrate is not limited to the above-described structure shown in the drawings, but may have any structure.
（発明の効果）
上述した説明からも明らかなように、この発明半導体発
光素子の構造によれば、本来の半導体発光素子−個分の
発光領域を微細な多数の島状発光領域に細分化し、各島
状発光領域内での結晶欠陥の存在確率を低減することが
出来ると共に、隣接する島状発光領域間を非発光領域で
分離しであるので、結晶欠陥の増殖を抑制することが出
来るる。従って、この発明の半導体発光素子によれば、
従来の半導体発光素子の場合よりも、高出力化及び長寿
命化を図ることが出来る。(Effects of the Invention) As is clear from the above description, according to the structure of the semiconductor light emitting device of the present invention, the light emitting region of the original semiconductor light emitting device is subdivided into a large number of fine island-like light emitting regions, The probability of the existence of crystal defects within each island-like light-emitting region can be reduced, and since adjacent island-like light-emitting regions are separated by a non-light-emitting region, the proliferation of crystal defects can be suppressed. . Therefore, according to the semiconductor light emitting device of the present invention,
Higher output and longer life than conventional semiconductor light emitting devices can be achieved.
第１図（Ａ）及び（Ｂ）はこの発明の半導体発光素子の
構造を説明するための路線的路線的平面図及びそのＡ−
Ａ線に沿った断面図、
第２図は従来の半導体発光素子を示す断面図である。
■・・・ｐ型基板、
２・・・ｎ型電流狭窄層（又は非発光領域）３・・・ｐ
型筒−クラッド層
４・・・活性層、 ５・・・ｎ型第二クラッド
層６・・・ｎ型キャップ層、 ７・・・電源８・・・
有効的な発光領域
９ａ〜９ｆ、・・・・・・微細な島状発光領域特許出願
人 沖電気工業株式会社く
く
ｃ〜
ｆヘ
ロコFIGS. 1(A) and 1(B) are a linear plan view and its A-
2 is a cross-sectional view taken along line A. FIG. 2 is a cross-sectional view showing a conventional semiconductor light emitting device. ■...p-type substrate, 2...n-type current confinement layer (or non-light emitting region) 3...p
Mold cylinder - cladding layer 4...active layer, 5...n-type second cladding layer 6...n-type cap layer, 7...power supply 8...
Effective light emitting areas 9a to 9f,... Fine island-like light emitting areas Patent applicant: Oki Electric Industry Co., Ltd. Kukuc~f Heroco
Claims (1)
素子において、前記発光領域を非発光領域でそれぞれ取
囲まれた複数個の微細な島状発光領域で構成したことを
特徴とする半導体発光素子。A surface emitting type light emitting element having a pn junction structure light emitting region on a substrate, characterized in that the light emitting region is constituted by a plurality of fine island-like light emitting regions each surrounded by a non-light emitting region. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130408A JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130408A JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS618981A true JPS618981A (en) | 1986-01-16 |
| JPH0345906B2 JPH0345906B2 (en) | 1991-07-12 |
Family
ID=15033560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59130408A Granted JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS618981A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002103811A1 (en) * | 2001-06-15 | 2002-12-27 | Nichia Corporation | Nitride semiconductor light emitting device |
| CN1324772C (en) * | 2002-06-19 | 2007-07-04 | 日本电信电话株式会社 | Semiconductor light-emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1117113A (en) * | 1913-10-04 | 1914-11-10 | Solomon R Wagg | Method of treating paper. |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
-
1984
- 1984-06-23 JP JP59130408A patent/JPS618981A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1117113A (en) * | 1913-10-04 | 1914-11-10 | Solomon R Wagg | Method of treating paper. |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002103811A1 (en) * | 2001-06-15 | 2002-12-27 | Nichia Corporation | Nitride semiconductor light emitting device |
| CN1324772C (en) * | 2002-06-19 | 2007-07-04 | 日本电信电话株式会社 | Semiconductor light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345906B2 (en) | 1991-07-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |