JPS6188569A - Solar cell device - Google Patents
Solar cell deviceInfo
- Publication number
- JPS6188569A JPS6188569A JP59209212A JP20921284A JPS6188569A JP S6188569 A JPS6188569 A JP S6188569A JP 59209212 A JP59209212 A JP 59209212A JP 20921284 A JP20921284 A JP 20921284A JP S6188569 A JPS6188569 A JP S6188569A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- transparent electrode
- solar cell
- layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 18
- 238000000059 patterning Methods 0.000 description 14
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、光起電力発生部に非晶質薄膜半導体を用いた
太陽電池素子を直列接続して成る太陽電池装置に関する
。The present invention relates to a solar cell device in which solar cell elements using an amorphous thin film semiconductor are connected in series to a photovoltaic power generating section.
シランガスのグロー放電分解により形成されるアモルフ
ァスシリコン（以下ａ−Ｓ＋）は気相成長であるため原
理的に大面積化が容易であり、低コスト太陽電池用材料
として期待されている。太陽電池から発電した電力を効
率よく取り出すためには、太陽電池装置の構造を例えば
第２図に示すような形状とし、単位素子が直列接続され
ている構造が望ましい、ガラス基板等の透明絶縁基板１
の上に透明電極２１，２２，２３，２４．、、、、を短
冊状に形成する。この透明電極は、ＩＴＯ（インジウム
錫酸化物） 、 ＳｎＯ□（Ｍ化錫）を電子ビーム、ス
パッタリング、熱ＣＶＤ等によりガラス５［１の全面に
付着させ、レーザパターニング法を用いて短冊状に形成
したものである。
同様の方法でａ −５ｉＮ３１．３２．３３，３４．、
．１．金属電極Ｍ ４１，４２．４３．４４．、、、、
を形成する。このとき透明電極層と金属電極層が電気的
に接続するように、透明電極、ａ−ＳＩＪＩ、金属電極
の各パターンを図のように少しずらせて２１と４２．２
２と４３．２３と４４１１１１．をそれぞれ接触させる
。 ａ−ＳｉＮ３１．３２は透明電極に近い側から、例
えば１００人の厚さのｐＮ。
０．５μｍの厚さのノンドープ屡、５００人の厚さのｎ
ＪｉＪがそれぞれ！［された構造である。
しかし、レーザバターニングを行う場合、バタ−ン精度
を上げる上で問題がある。第３図はその例を示し、パタ
ーン状の透明電極２１，２２，２３，２４．、、、。
の上にａ−５ｉＮ３を全面に形成する。このａ−Ｓｉ層
をパターニングする場合、例えば位１Ｚ５１，５２，５
３゜５４、、、、をレーザ光で照射することにより蒸発
させるのであるが、この蒸発させる部分の下地が段差部
であるためａ −５！Ｎの膜厚が必ずしも一定でない、
このために、ａ−５ｌを蒸発させてしかも透明電極を損
わない条件を見出すことは非常に困難である。もしａ−
５ｉと共に下の透明電極が除去されてしまうと、直列接
続は不可能となる。
同じことがパターン化されたａ−５ｉＦＪＯ上に形成し
た金属電極をパターニングする際にもいえる。
いずれにしろ下地が段差を有し、それが上部の薄膜層の
膜厚に影響を与える第２図のような構造では、パターニ
ングを精度よく行うのは難しい、このことはレーザ以外
の方法でパターニングする際にも当てはまる。Amorphous silicon (hereinafter referred to as a-S+) formed by glow discharge decomposition of silane gas is grown in a vapor phase, so it is theoretically easy to grow into a large area, and is expected to be a material for low-cost solar cells. In order to efficiently extract the power generated from solar cells, it is desirable that the structure of the solar cell device be shaped as shown in Figure 2, with unit elements connected in series, using a transparent insulating substrate such as a glass substrate. 1
Transparent electrodes 21, 22, 23, 24 . , , , is formed into a rectangular shape. This transparent electrode is made by attaching ITO (indium tin oxide) and SnO□ (M tin oxide) to the entire surface of the glass 5 [1] by electron beam, sputtering, thermal CVD, etc., and forming it into a strip shape using a laser patterning method. This is what I did. In a similar manner, a-5iN31.32.33,34. ,
．． 1. Metal electrode M 41, 42.43.44. ,,,,
form. At this time, in order to electrically connect the transparent electrode layer and the metal electrode layer, the patterns of the transparent electrode, a-SIJI, and metal electrode are slightly shifted as shown in the figure.
2 and 43.23 and 441111. touch each other. The a-SiN31.32 has a pN thickness of, for example, 100 nm from the side close to the transparent electrode. 0.5 μm thick non-doped, 500 μm thick n
JiJ each! [This is the structure. However, when performing laser patterning, there is a problem in improving pattern accuracy. FIG. 3 shows an example of this, with patterned transparent electrodes 21, 22, 23, 24 . ,,,. A-5iN3 is formed on the entire surface. When patterning this a-Si layer, for example, 1Z51, 52, 5
3°54, , , is evaporated by irradiating it with a laser beam, but since the base of this evaporated part is a stepped part, a -5! The N film thickness is not necessarily constant.
For this reason, it is extremely difficult to find conditions that allow a-5l to evaporate without damaging the transparent electrode. If a-
If the lower transparent electrode is removed together with 5i, series connection becomes impossible. The same holds true when patterning metal electrodes formed on patterned a-5i FJO. In any case, it is difficult to perform patterning with high precision in a structure like the one shown in Figure 2, where the underlying layer has steps that affect the thickness of the upper thin film layer. The same applies when doing.
本発明は、上述のようなａ−５ｉＪＨのパターニングの
際に下層の電極層のパターンに損傷を与えて太陽電池素
子の直列接続を不可能にする問題を解決して、歩留りよ
く製造できる直列接続型太陽電池装置を提供することを
目的とする。The present invention solves the problem of damaging the pattern of the lower electrode layer during patterning of a-5iJH as described above, making it impossible to connect solar cell elements in series, and the series connection can be manufactured with high yield. The purpose is to provide a type solar cell device.
本発明による太陽電池装置は、絶縁基板上に非晶質半導
体薄膜がそれぞれ分割された領域からなる透明電極層お
よび金属電極層と共に積層され、透明電極層および金属
Ｔ４ Ｆｉｉ ＦＪの分割部は互いにずらされた位置に
あり、一方の電極層の一つの領域が隣接領域の上の他方
の電極層の縁部と重なっている部分に介在する半導体３
ａが結晶化されていることにより、透明電極、非晶質半
導体薄膜、金属電極からなる太陽電池素子の接続が結晶
質半導体によって行われ、半導体薄膜のパターニングの
必要が省かれるので上記の目的が達成される。In the solar cell device according to the present invention, an amorphous semiconductor thin film is laminated on an insulating substrate together with a transparent electrode layer and a metal electrode layer each consisting of divided regions, and the divided portions of the transparent electrode layer and the metal T4 Fii FJ are staggered from each other. The semiconductor 3 is located at a position where one region of one electrode layer overlaps the edge of the other electrode layer over an adjacent region.
By crystallizing a, the solar cell element consisting of a transparent electrode, an amorphous semiconductor thin film, and a metal electrode is connected by the crystalline semiconductor, and the need for patterning the semiconductor thin film is omitted, so that the above purpose is achieved. achieved.
第１図は本発明の一実施例を、第４図（ａｌ〜ｆｄ＋は
その製造工程をそれぞれ示し、第２．第３図と共に共通
の部分には同一の符号が付されている。透明絶縁基板１
の上にはａ−３ｉ層３をはさんで透明電極のパターン２
１．２２，２３，２４．、、、、と金属電極のパターン
４１，４２，４３．４４が一部重なり合うように形成さ
れている。この重なり合っている部分においてａ−５ｉ
Ｎ３は多結晶化されて斜線で示した低抵抗領域６Ｌ６２
，６３，６４．．、、、を有する。このような構造は第
４図（ａｌ〜（ｄ＋に示す手順で製造される。
ガラス基板１の上に、電子ビーム、熱ＣＶＤ等の方法で
Ｉ Ｔ Ｏ、５ｎ０２又はＩ Ｔ Ｏ／ Ｓ、ｎＯｔの
複合材料からなる膜を１０００人〜７０００人の厚さで
一面に形成し、この面に約５ｏＩＩＩＩ＋の径に絞った
ＹＡＧレーザビームを照射してスキャンすることにより
、第４図（ａｌに示す透明電極パターン２Ｌ２２，２３
，２４．、、、。
を形成する。このときの出力パワーとしては２×１０’
Ｗ／−が適当である０次に（１））図に示すようにａ
−ｓ＋ｆｆ１３を形成する。ａ−３ｉＪ３３は上述のよ
うなｐ −ｉ −ｎ ｊｎ造を有する。ｐ５はＢｚＨｈ
／ ５ｉＨ４−１％の側合で導入し、グロー放電分解す
ることにより形成する。ＩＪｉ５はＳｉＨ，の分解によ
り、ｎＪ３はＰＲ，／５ｉＨ−−１％の混合ガスの分解
により形成する０次いで透明電極パターンの端部６１，
６２，６３，６４゜１１０．においてａ−５ｉＦ１３に
ＹＡＧレーザビームを照射し、多結晶化させてａ −Ｓ
ｉ層を一部低抵抗化する。この照射パワーとしては数Ｍ
Ｗ／ｃｄが適当である。多少出力が大きくても小さくて
も問題はない、ａ−Ｓｉ層３が蒸発して無くなることの
ない出力密度にとどめればよいので、レーザビームの制
御は比較的容易である。
次に第４図ｆｃｌに示すように電子ビーム法によって金
属電極層４を形成させる。この金属としてＡＩ。
τｉ、Ｔａ＋Ｃｕ＋旧、Ａｇ、ステンレス鋼などの金属
が単層または積層として用いられる。膜厚は、全体で０
．２μ鵡〜１．ｃｒｍに形成される。さらに第４図（司
に示すように、金属電極層４のパターニングを行い、電
極パターン４１．４２，４３，４４．４５．、、、を形
成する。電極パターンと透明電極パターンは、多結晶化
されたａ −ＳＬの領域６１，６２．６３，６４．、、
、、をはさんで重ね合わさるように構成される。こうす
ることによって、例えば多結晶化部分６１を通して透明
電極２１と金ｌｌＴｉ電？！ｉ４２が接続されることに
なる。同様のやり方で電極２２，４３；２３．４４；２
４．４５；がそれぞれ６２，６３．６４８１１．によっ
て接続され、各単位素子が直列接続されることになる。
金属電極パターニングのためのレーザ出力は１〜５ Ｘ
Ｉ（１’ Ｗ／ｃｓｌ程度が用いられる。この状態でａ
−Ｓｉ層に損傷を与えることなくパターンが形成できる
。
こうして形成された１０ロ角ガラス基板上の１０直列の
素子から成る太陽電池装置において、Ｖｏｃ ＝８、８
Ｖ、 Ｉｓｃ ＝１３０ｍＡ、ＦＦ−０，５８，出力
−６６０＋ｗ）ｉの特性を得た。この方法でパターニン
グを行うと透明電極間隙５０μ鴎、金属電極間隙５０μ
ｍ、金属電極と透明電極の重なり部分約１００μ楯とす
ることができ、無効面積部分が単位素子当たり０．３ｍ
ｍ程度となるので、全面積の９３％程度を有効面積とす
ることができた。
さらに第５図に示すように、レーザパワーの出力をあげ
てａ−ＳｉＦ１３の一部又は全部をパターニングの際に
除去しても特性上問題はなかった。またこの太陽電池を
グロー放電炉に入れてＣＨ，で土砂ないし数土砂エンチ
ングを行うことにより、フィルファクタが０．６５まで
改善され、それに伴い出力が約１０％向上した。このこ
とはａ−５ｉＪｉ３の一部特に金属電極のパターニング
の際分割部の下に形成された低抵抗部分が除去され、リ
ーク電流が減少した結果によるものであると考えられる
。FIG. 1 shows an embodiment of the present invention, and FIG. 4 (al to fd+ indicate the manufacturing process, respectively, and the same parts as in FIGS. 2 and 3 are given the same reference numerals. Transparent insulation Board 1
A-3i layer 3 is sandwiched on top of the transparent electrode pattern 2.
1.22, 23, 24. , , and metal electrode patterns 41, 42, 43, and 44 are formed so as to partially overlap. a-5i in this overlapping part
N3 is a polycrystalline low resistance region 6L62 indicated by diagonal lines.
, 63, 64. ．． , , has. Such a structure is manufactured by the procedure shown in FIGS. 4(a-1 to d+). By forming a film made of a composite material with a thickness of 1,000 to 7,000 mm on one surface, and scanning this surface by irradiating a YAG laser beam focused to a diameter of about 5oIII+, Transparent electrode pattern 2L22, 23
,24. ,,,. form. The output power at this time is 2×10'
W/- is appropriate for the 0th order (1)) As shown in the figure, a
-s+ff13 is formed. a-3iJ33 has a p-i-n jn structure as described above. p5 is BzHh
/5iH4-1% is introduced and formed by glow discharge decomposition. IJi5 is formed by the decomposition of SiH, and nJ3 is formed by the decomposition of PR, /5iH--1% of the mixed gas.
62,63,64°110. A-5iF13 was irradiated with a YAG laser beam to polycrystallize it and form a-S
Partially lower the resistance of the i-layer. This irradiation power is several M
W/cd is appropriate. There is no problem whether the output is somewhat large or small; it is sufficient to keep the output density at a level that does not cause the a-Si layer 3 to evaporate and disappear, so controlling the laser beam is relatively easy. Next, as shown in FIG. 4fcl, a metal electrode layer 4 is formed by an electron beam method. AI as this metal. Metals such as τi, Ta+Cu+old, Ag, and stainless steel are used as a single layer or a laminated layer. The total film thickness is 0.
．． 2 μm ~ 1. Formed in crm. Furthermore, as shown in FIG. 4 (Tsukasa), the metal electrode layer 4 is patterned to form electrode patterns 41, 42, 43, 44, 45, . Areas 61, 62, 63, 64., of a-SL
, , are arranged so that they are superimposed on each other. By doing this, for example, the transparent electrode 21 and the gold/Ti electrode can be connected through the polycrystalline portion 61. ! i42 will be connected. In a similar manner electrodes 22, 43; 23, 44; 2
4.45; are respectively 62, 63.64811. The unit elements are connected in series. Laser power for metal electrode patterning is 1-5X
I (about 1' W/csl is used. In this state, a
- Patterns can be formed without damaging the Si layer. In the thus formed solar cell device consisting of 10 series elements on a 10 square glass substrate, Voc = 8,8
The characteristics of V, Isc = 130 mA, FF - 0, 58, output - 660 + w)i were obtained. When patterning is performed using this method, the gap between transparent electrodes is 50μ, and the gap between metal electrodes is 50μ.
m, the overlapping area between the metal electrode and the transparent electrode can be approximately 100μ shield, and the effective area is 0.3m per unit element.
Since the area is approximately 93% of the total area, the effective area can be approximately 93% of the total area. Furthermore, as shown in FIG. 5, there was no problem in terms of characteristics even when the laser power was increased to remove part or all of the a-SiF 13 during patterning. In addition, by placing this solar cell in a glow discharge furnace and subjecting it to sand or sand enching with CH, the fill factor was improved to 0.65, and the output was accordingly improved by about 10%. This is considered to be due to the fact that part of the a-5iJi3, particularly the low resistance portion formed under the divided portion during patterning of the metal electrode, was removed, resulting in a reduction in leakage current.
本発明は複数の太陽電池素子が直列接続された太陽電池
装置を、分割パターニングされた透明電極、金属電極と
その間に挟まれた分割されない非晶質半導体薄膜とから
構成し、素子間の接続は半導体薄膜の結晶化された部分
によって行うものである。従って非晶買手４体薄膜のパ
ターニングが必要でなくなり、精度の高いパターニング
も要求されな（なって製造歩留りが向上するほか、発電
に対する無効面積部分の減少も可能になる。
本発明は透明絶縁基板上に形成される太陽電池装置に限
らず、不透明絶縁基板上に形成され、表面に透明電極を
有する太陽電池装置にも適用できる。またパターニング
をエツチングで行う場合にも適用可能である。The present invention comprises a solar cell device in which a plurality of solar cell elements are connected in series, consisting of transparent electrodes patterned into segments, a metal electrode, and an undivided amorphous semiconductor thin film sandwiched between them, and the connections between the elements are This is done using a crystallized portion of a semiconductor thin film. Therefore, patterning of the amorphous 4-body thin film is no longer required, and highly accurate patterning is not required (this not only improves manufacturing yield but also reduces the area that is ineffective for power generation. The present invention is applicable not only to solar cell devices formed on an opaque insulating substrate but also to solar cell devices formed on an opaque insulating substrate and having a transparent electrode on the surface.It is also applicable when patterning is performed by etching.
第１図は本発明の一実施例の一部断面図、第２図は従来
例の部分断面図、第３１２１は第２図の太陽電池装置の
製造工程中の部分断面図、第４図は第１図の太陽電池装
置の製造工程を順次示す断面図、第５図は別の実施例の
一部断面図である。
１：透明絶縁基板、２１．２２．２３．２４ ：透明電
極、３ ： ａ −ｓ＋５、 ４：金属ｔ Ｐｊ、 Ｈ
１４１，４２，４３，４４゜４５；全屈ＴＬ極、６１．
６２．６３．６４ ：多結晶化部分。
］ぞ（°月１４東羽暴′扱 第 １ しｄ第２図
第３図FIG. 1 is a partial cross-sectional view of an embodiment of the present invention, FIG. 2 is a partial cross-sectional view of a conventional example, FIG. 3121 is a partial cross-sectional view of the solar cell device in FIG. 2 during the manufacturing process, and FIG. FIG. 1 is a cross-sectional view sequentially showing the manufacturing process of the solar cell device, and FIG. 5 is a partial cross-sectional view of another embodiment. 1: Transparent insulating substrate, 21.22.23.24: Transparent electrode, 3: a-s+5, 4: Metal tPj, H
141, 42, 43, 44° 45; Total flexion TL pole, 61.
62.63.64: Polycrystalline portion. ] (°Mon. 14 Toba assault' treatment 1st 2nd figure 2 figure 3
Claims (1)
た領域からなる透明電極層および金属電極層と共に積層
され、透明電極層および金属電極層の分割部は互いにず
らされた位置にあり、一方の電極層の一つの領域が隣接
領域の上の他方の電極層の縁部と重なっている部分に介
在する半導体薄膜が結晶化されたことを特徴とする太陽
電池装置。1) An amorphous semiconductor thin film is laminated on an insulating substrate together with a transparent electrode layer and a metal electrode layer each consisting of a divided region, and the divided portions of the transparent electrode layer and the metal electrode layer are located at offset positions from each other, while A solar cell device characterized in that a semiconductor thin film interposed in a portion where one region of an electrode layer overlaps an edge of the other electrode layer on an adjacent region is crystallized.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59209212A JPS6188569A (en) | 1984-10-05 | 1984-10-05 | Solar cell device |
| US06/780,093 US4954181A (en) | 1984-10-05 | 1985-09-25 | Solar cell module and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59209212A JPS6188569A (en) | 1984-10-05 | 1984-10-05 | Solar cell device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6188569A true JPS6188569A (en) | 1986-05-06 |
Family
ID=16569204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59209212A Pending JPS6188569A (en) | 1984-10-05 | 1984-10-05 | Solar cell device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6188569A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007086522A1 (en) * | 2006-01-30 | 2007-08-02 | Honda Motor Co., Ltd. | Solar cell and manufacturing method thereof |
| JP2007201304A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
-
1984
- 1984-10-05 JP JP59209212A patent/JPS6188569A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007086522A1 (en) * | 2006-01-30 | 2007-08-02 | Honda Motor Co., Ltd. | Solar cell and manufacturing method thereof |
| JP2007201304A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
| JP2007201302A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
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