JPS622713B2 - - Google Patents
Info
- Publication number
- JPS622713B2 JPS622713B2 JP56137329A JP13732981A JPS622713B2 JP S622713 B2 JPS622713 B2 JP S622713B2 JP 56137329 A JP56137329 A JP 56137329A JP 13732981 A JP13732981 A JP 13732981A JP S622713 B2 JPS622713 B2 JP S622713B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- amorphous semiconductor
- metal substrate
- external lead
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】
この発明は金属板を基板とするアモルフアス太
陽電池の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of an amorphous solar cell using a metal plate as a substrate.
安価な太陽電池として金属板を基板とするアモ
ルフアス太陽電池が有望視され、研究開発が進め
られている。第１図は従来のこの種太陽電池の構
成を示す断面図である。まず、ステンレス鋼など
の銹びにくい金属基板１の上にグロー放電法によ
りシラン（SiH4）ガスを分解してアモルフアス半
導体層２をデポジシヨンする。その時にホスフイ
ン（PH3）またはジボラン（B2H6）ガスを１％程度
混合することによつて、それぞれｎ形またはｐ形
のアモルフアス半導体層を得るようにして、その
伝導形を制御して、連続的にｐ形、ｉ形およびｎ
形のアモルフアス半導体層を積層して図示、アモ
ルフアス半導体層２を形成する。次に、このアモ
ルフアス半導体層２の上にインジウム・スズ酸化
物（Indium・Tin・Oxide：ITO）を蒸着して光
学的に透明な導電膜３を形成する。この導電膜３
はアモルフアス半導体層２の表面側の電気抵抗を
低下させる目的をもつている。最後にアルミニウ
ムなどを蒸着して金属電極４および外部リード線
接続のためのボンデイングパツド（特に図示せ
ず）を形成し、この部分に外部リード線５を接続
する。他方の外部接続は金属基板１に対して行な
われる。 Amorphous solar cells, which use metal plates as substrates, are seen as promising as inexpensive solar cells, and research and development is underway. FIG. 1 is a sectional view showing the structure of a conventional solar cell of this type. First, an amorphous semiconductor layer 2 is deposited on a rust-resistant metal substrate 1 such as stainless steel by decomposing silane (SiH 4 ) gas using a glow discharge method. At this time, by mixing about 1% of phosphine (PH 3 ) or diborane (B 2 H 6 ) gas, an n-type or p-type amorphous semiconductor layer is obtained, respectively, and the conductivity type is controlled. , successively p-type, i-type and n
The amorphous semiconductor layer 2 shown in the figure is formed by stacking amorphous semiconductor layers of the shape. Next, on this amorphous semiconductor layer 2, indium-tin oxide (ITO) is deposited to form an optically transparent conductive film 3. This conductive film 3
has the purpose of reducing the electrical resistance on the surface side of the amorphous semiconductor layer 2. Finally, metal electrodes 4 and bonding pads (not particularly shown) for connecting external lead wires are formed by vapor depositing aluminum or the like, and external lead wires 5 are connected to these parts. The other external connection is made to the metal substrate 1.
ところで、金属基板１への外部接続は、金属基
板１が堅固であるので、安全容易であるが、アモ
ルフアス半導体層３の表面側の外部リード線５の
接続には困難を伴う。すなわち、この外部リード
線５の接続は、超音波接続、スポツト溶接、半田
付けなどによるが、それらの作業に伴う熱や、圧
力のために、第１図に示したように金属電極４か
らアモルフアス半導体層２に達するクラツク６が
発生することがある。このように、クラツク６が
発生すると、アモルフアス半導体層３の厚さが１
ミクロン以下で、極めて薄いので、電極４の金属
がクラツク６を通して容易に基板１に達し、この
太陽電池を短絡させることになる。つまり、電極
への外部リード線５の接続の工程で、太陽電池を
破損する危険が大きかつた。 Incidentally, the external connection to the metal substrate 1 is safe and easy because the metal substrate 1 is strong, but the connection of the external lead wire 5 on the surface side of the amorphous semiconductor layer 3 is difficult. That is, the external lead wire 5 is connected by ultrasonic connection, spot welding, soldering, etc., but due to the heat and pressure associated with these operations, the amorphous material is removed from the metal electrode 4 as shown in FIG. Cracks 6 that reach the semiconductor layer 2 may occur. In this way, when the crack 6 occurs, the thickness of the amorphous semiconductor layer 3 becomes 1
Since it is extremely thin, less than a micrometer in size, the metal of the electrode 4 easily reaches the substrate 1 through the crack 6, shorting out the solar cell. In other words, there was a great risk of damaging the solar cell during the process of connecting the external lead wire 5 to the electrode.
この発明は以上のような点に鑑みてなされたも
ので、表面側の外部リード線をボンデイングすべ
き部位の直下に金属基板とアモルフアス半導体層
との間に絶縁膜を設けることによつて、たとえ上
述のようなクラツクが発生しても短絡事故の発生
しないアモルフアス太陽電池を提供することを目
的としている。 This invention has been made in view of the above points, and by providing an insulating film between the metal substrate and the amorphous semiconductor layer directly under the area where the external lead wire on the front side is to be bonded, it is possible to It is an object of the present invention to provide an amorphous solar cell that does not cause short-circuit accidents even when cracks such as those described above occur.
第２図はこの発明の一実施例の構成を示す断面
図で、第１図の従来例と同等部分は同一符号で示
し、その説明の重複を避ける。すなわち、この実
施例では、金属基板１上にアモルフアス半導体層
２を成長させる前に、将来表面側外部リード線５
をボンデイングすべき部位の直下にシリコン酸化
膜７を形成しておくもので、以下そのシリコン酸
化膜７の上を含めて金属基板１の上にアモルフア
ス半導体層２を形成し、それ以後の工程は従来例
と全く同様である。シリコン酸化膜７は400℃前
後の温度での化学的気相成長（CVD）または近
年実用化されつつあるプラズマCVDによつてデ
ポジシヨンさせるのが適当である。このように、
金属基板１とアモルフアス半導体層２との間のク
ラツク発生の可能性のある部位に堅固なシリコン
酸化膜７を設けたので、たとえ、外部リード線５
のボンデイングによつてクラツク６が発生して
も、金属電極４と金属基板１との短絡は阻止さ
れ、素子の破壊は発生しない。このとき、もちろ
んアモルフアス半導体層２内のpn接合はクラツ
ク６によつて破壊されるが、アモルフアス半導体
層２の自体が非常に高抵抗であり、このクラツク
発生部位は電極金属４の影に入つており、もとも
と太陽電池としての機能に寄与していない部分で
あるので、全体として素子機能を損ずることはな
い。 FIG. 2 is a sectional view showing the configuration of an embodiment of the present invention, and parts equivalent to those of the conventional example of FIG. 1 are designated by the same reference numerals to avoid duplication of explanation. That is, in this embodiment, before growing the amorphous semiconductor layer 2 on the metal substrate 1, the future surface side external lead wires 5 are
A silicon oxide film 7 is formed directly under the area to be bonded, and an amorphous semiconductor layer 2 is formed on the metal substrate 1 including the silicon oxide film 7, and the subsequent steps are as follows. This is exactly the same as the conventional example. The silicon oxide film 7 is suitably deposited by chemical vapor deposition (CVD) at a temperature of about 400° C. or by plasma CVD, which has been put into practical use in recent years. in this way,
Since a strong silicon oxide film 7 is provided at a location where a crack may occur between the metal substrate 1 and the amorphous semiconductor layer 2, even if the external lead wire 5
Even if a crack 6 occurs due to bonding, the short circuit between the metal electrode 4 and the metal substrate 1 is prevented, and the device is not destroyed. At this time, of course, the pn junction in the amorphous semiconductor layer 2 is destroyed by the crack 6, but the amorphous semiconductor layer 2 itself has a very high resistance, and the crack generation site is in the shadow of the electrode metal 4. Since this is a part that does not originally contribute to the function of a solar cell, it does not impair the device function as a whole.
上記実施例では、シリコン酸化膜を絶縁膜とし
て用いたが、プラズマCVDによるシリコン窒化
膜、または蒸着した各種絶縁膜でもよく、また、
パターニングは全面に付着させた後に、写真製版
技術で不用部分をエツチングしてもよいし、パタ
ーン精度を問わないときにはマスク蒸着法で所要
部位に部分的に付着させてもよい。 In the above embodiment, a silicon oxide film was used as the insulating film, but a silicon nitride film formed by plasma CVD or various insulating films deposited by vapor deposition may also be used.
The patterning may be performed by applying the pattern to the entire surface and then etching unnecessary portions using photolithography, or if the pattern accuracy is not important, it may be applied partially to the required areas by mask vapor deposition.
以上説明したように、この発明になるアモルフ
アス太陽電池ではアモルフアス半導体層にクラツ
クの発生するおそれのある表面側外部リード線の
ボンデイング部位直下の部分に、そのアモルフア
ス半導体層と金属基板との間に絶縁膜を介在させ
たので、上記クラツクが発生しても表面電極と金
属基板との間の短絡による素子の機能破壊が防止
できる。 As explained above, in the amorphous solar cell according to the present invention, there is an insulating layer between the amorphous semiconductor layer and the metal substrate in the part directly below the bonding site of the front side external lead wire, where cracks may occur in the amorphous semiconductor layer. Since the film is interposed, even if the crack occurs, it is possible to prevent the element from being destroyed due to a short circuit between the surface electrode and the metal substrate.
第１図は従来のアモルフアス太陽電池の構成を
示す断面図、第２図はこの発明の一実施例の構成
を示す断面図である。
図において、１は金属基板、２はアモルフアス
半導体層、３は透明導電膜、４は金属電極、５は
外部リード線、７は絶縁膜である。なお、図中同
一符号は同一または相当部分を示す。
FIG. 1 is a sectional view showing the structure of a conventional amorphous solar cell, and FIG. 2 is a sectional view showing the structure of an embodiment of the present invention. In the figure, 1 is a metal substrate, 2 is an amorphous semiconductor layer, 3 is a transparent conductive film, 4 is a metal electrode, 5 is an external lead wire, and 7 is an insulating film. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
電膜とを順次形成しその上面の一部に金属電極を
介して外部リード線をボンデイングしてなるもの
において、上記外部リード線のボンデイング部位
の直下の部分の上記金属基板と上記アモルフアス
半導体層との間に絶縁膜を介在させたことを特徴
とするアモルフアス太陽電池。1. In a product in which an amorphous semiconductor layer and a transparent conductive film are sequentially formed on a metal substrate, and an external lead wire is bonded to a part of the upper surface of the layer through a metal electrode, the part immediately below the bonding part of the external lead wire. An amorphous solar cell characterized in that an insulating film is interposed between the metal substrate and the amorphous semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137329A JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137329A JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5839073A JPS5839073A (en) | 1983-03-07 |
| JPS622713B2 true JPS622713B2 (en) | 1987-01-21 |
Family
ID=15196117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56137329A Granted JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839073A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112019006224T5 (en) | 2019-02-28 | 2021-10-14 | Hitachi High-Tech Corporation | Electrophoresis device capable of performing electrophoresis on multiple samples independently |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590327A (en) * | 1984-09-24 | 1986-05-20 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US4633034A (en) * | 1985-02-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| JPS62128571A (en) * | 1985-11-29 | 1987-06-10 | Fuji Electric Co Ltd | Amorphous silicon solar battery |
| US5395457A (en) * | 1992-12-16 | 1995-03-07 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing the same |
| JP5147672B2 (en) * | 2008-01-31 | 2013-02-20 | 三洋電機株式会社 | Solar cell module and method for manufacturing solar cell module |
| JP2011222822A (en) * | 2010-04-12 | 2011-11-04 | Fujifilm Corp | Solar battery module and manufacturing method thereof |
| JP2011233798A (en) * | 2010-04-30 | 2011-11-17 | Fujifilm Corp | Solar cell module |
-
1981
- 1981-08-31 JP JP56137329A patent/JPS5839073A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112019006224T5 (en) | 2019-02-28 | 2021-10-14 | Hitachi High-Tech Corporation | Electrophoresis device capable of performing electrophoresis on multiple samples independently |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5839073A (en) | 1983-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3349308B2 (en) | Photovoltaic element | |
| US4758526A (en) | Procedure for producing an integrated system of thin-film solar cells connected in series | |
| US4542578A (en) | Method of manufacturing photovoltaic device | |
| US5385614A (en) | Series interconnected photovoltaic cells and method for making same | |
| JPS5961077A (en) | Amorphous silicon solar battery | |
| JPS60240171A (en) | Solar electric generator | |
| JPS622713B2 (en) | ||
| JP3243232B2 (en) | Thin film solar cell module | |
| US4954181A (en) | Solar cell module and method of manufacture | |
| JPS5996779A (en) | Photoelectric conversion device | |
| JP3243229B2 (en) | Solar cell module | |
| US4645866A (en) | Photovoltaic device and a method of producing the same | |
| JPS5955079A (en) | Thin film semiconductor device | |
| JPS5863179A (en) | Photovoltaic device | |
| JPS58196060A (en) | Thin film semiconductor device | |
| JPS6261376A (en) | Solar battery | |
| JPH06112514A (en) | Manufacture of photoelectric conversion semiconductor device | |
| JP2000261019A (en) | Solar battery module | |
| JP3209702B2 (en) | Photovoltaic device manufacturing method | |
| JPH0415631B2 (en) | ||
| JPH055194B2 (en) | ||
| JP2680709B2 (en) | Method of forming photovoltaic device | |
| JPS6357953B2 (en) | ||
| JPH0442944Y2 (en) | ||
| JPS6174376A (en) | Thin-film photovoltaic element |