JPS6116580A - Optical detection semiconductor device - Google Patents
Optical detection semiconductor deviceInfo
- Publication number
- JPS6116580A JPS6116580A JP59138326A JP13832684A JPS6116580A JP S6116580 A JPS6116580 A JP S6116580A JP 59138326 A JP59138326 A JP 59138326A JP 13832684 A JP13832684 A JP 13832684A JP S6116580 A JPS6116580 A JP S6116580A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- impurity concentration
- semiconductor
- junction
- type conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 230000003287 optical effect Effects 0.000 title description 5
- 238000001514 detection method Methods 0.000 title description 3
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- -1 phosphorus ions Chemical class 0.000 claims abstract description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、照射光の波長の検出、色調の判別を行なうこ
との可能な光検知半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a photodetecting semiconductor device capable of detecting the wavelength of irradiated light and determining the color tone.
従来例の構成とその問題点
近年、色の判別、色調の検出、照射光の色温度の測定等
に、半導体装置が使用されている。これらは、検出物体
のもつ色に関する情報すなわち、波長や光強度を電気信
号に変換する光検出装置が用いられている。今日、その
利用分野として最もひるが９つつめるものに、ビデオカ
メラのホワイトバランス用の光検出装置がある。2. Description of the Related Art Structures of Conventional Examples and Their Problems In recent years, semiconductor devices have been used for color discrimination, color tone detection, measurement of color temperature of irradiated light, and the like. These devices use a photodetector that converts information about the color of the object to be detected, such as wavelength and light intensity, into electrical signals. Today, one of the most important fields of use is light detection devices for white balance in video cameras.
従来、物体からの反射光、光源自体の色、光源の色温度
などを識別するためには、光学的フィルタ、プリズムあ
るいは、回折格子等を用いた比較的高価な装置が必要で
、装置の小型化が困難でめった。また、小型化に対応し
たものとして第１図に示すようなアモルファスシリコン
光検出装置が提案されている。透明ガラス板２上に透明
電極３を蒸着し、アモルファスシリコン４を形成した後
、コンタクト電極５を形成する。ガラス板の反対側に青
色を透過する光学フィルタ１ａ、緑色、赤色を透過する
フィルタ１ｂ、１Ｃをそれぞれ形成し、光電変換素子と
して一体的に構成したものである。Conventionally, in order to identify the reflected light from an object, the color of the light source itself, the color temperature of the light source, etc., relatively expensive equipment using optical filters, prisms, or diffraction gratings was required, and the equipment was small and It is difficult and rare to convert. Furthermore, an amorphous silicon photodetector as shown in FIG. 1 has been proposed as a device compatible with miniaturization. After a transparent electrode 3 is deposited on a transparent glass plate 2 and amorphous silicon 4 is formed, a contact electrode 5 is formed. An optical filter 1a that transmits blue light, and filters 1b and 1C that transmit green and red light are formed on the opposite side of the glass plate, and are integrally constructed as a photoelectric conversion element.
しかしながらこの装置においてに、各波長に対応する受
光面積が小さくなり、光感度が低下するととや、組み立
て工程において、リードフレームを用いること、さらに
、三色のフィルタを用いることなどから、組み立て上の
困難さや、安価に量産ができないなどの欠点を有してい
る。However, in this device, the light-receiving area corresponding to each wavelength becomes smaller and the photosensitivity decreases, and the assembly process requires lead frames and three-color filters. It has drawbacks such as difficulty and the inability to mass-produce it at low cost.
発明の目的
本発明に上記欠点を除去し、従来のシリコンプロセスに
より容易に作製でき、シリコンの光吸収特性を積極的に
利用し、安価で量産性にすぐれた光検知半導体装置を提
供するものである。OBJECT OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks, to provide a photodetecting semiconductor device that can be easily manufactured by a conventional silicon process, actively utilizes the light absorption characteristics of silicon, and is inexpensive and easy to mass produce. be.
発明の構成
本発明は、高濃度の不純物濃度を有するＰ形導電形の半
導体基板上に１ Ｘ １０１４ｃｎｌ”−３以下の不純
物濃度を有するＰ形導電形のエピタキシャル成長による
第１の半導体領域と、リンイオンをイオン注入したのち
熱拡散によシネ細物濃度が１〜５×１０１５ｆｆ”−’
で、拡散深さが８〜１２μｍでβるＮ地導電形の第２の
半導体領域と、第２の半導体領域上に前記半導体基板よ
りも大きい不純物濃度を有するＰ形導電形の第３の表面
半導体領域とより成る光検知半導体装置でアシ、浅いＰ
Ｎ接合と深いＰＮ接合とを深さ方向に１つの半導体チ、
ツブに構成し、それぞれの波長領域に対応した光電流を
得るものである。これにより、広範囲の波長域に感度を
もつ光検出半導体装置が得られる。Structure of the Invention The present invention provides a first semiconductor region formed by epitaxial growth of a P-type conductivity type having an impurity concentration of 1 x 1014cnl''-3 or less on a P-type conductivity type semiconductor substrate having a high impurity concentration, After ion implantation, the concentration of cine fines increases from 1 to 5 x 1015ff"-' by thermal diffusion.
a second semiconductor region of N-type conductivity type with a diffusion depth of 8 to 12 μm and a third surface of P-type conductivity type having an impurity concentration higher than that of the semiconductor substrate on the second semiconductor region; A light sensing semiconductor device consisting of a semiconductor region has a reed and a shallow P.
N junction and deep PN junction in one semiconductor chip in the depth direction,
It is structured in a block to obtain photocurrent corresponding to each wavelength region. As a result, a photodetecting semiconductor device having sensitivity over a wide range of wavelengths can be obtained.
実施例の説明
以下本発明の一実施例を添付図面によシ説明する。第２
図は本発明の実施例を示す半導体装置の断面図である。DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention will now be described with reference to the accompanying drawings. Second
The figure is a sectional view of a semiconductor device showing an embodiment of the present invention.
不純物濃度の高いＰ形導電形の半導体基板６に０．５〜
Ｉ Ｘ ｊ Ｏ” ｆｆｉ””の不純物濃度を有するＰ
形導電形の第１の半導体領域７を４゜〜５０μｍｔｏ厚
みでエピタキシャル成長させる。0.5 to P type conductivity type semiconductor substrate 6 with high impurity concentration.
P with an impurity concentration of I X j O"ffi""
A first semiconductor region 7 of the same conductivity type is epitaxially grown to a thickness of 4° to 50 μm.
次に前記半導体基板６と第１の半導体領域子とのほぼ中
間の不純物濃度である１〜５×１０ α程度で、厚み８
〜１２μｍになるようにＮ形導電形の第２の半導体領域
８を形成する。第２の半導体領域に、イオン注入法によ
り、リンイオンを注入した後、熱拡散によや上記の条件
の得られるように形成する。本実施例においてに、注入
加速エネルギー１００に６Ｖ、拡散条件［１１８０℃、
１６時間である。さらに前記第２の半導体領域８上に前
記半導体基板６の不純物濃度以上の不純物濃度を有する
Ｐ形導電形の第３の表面半導体領域９をボロンを熱拡散
させ形成する。なお、第２のＮ形導電形の半導体領域８
と良好なオーミックコンタクトを得るために、第２の半
導体領域８０チップ表面領域に第３の半導体領域９とほ
ぼ等しい不純物濃度でもってリンを熱拡散させたＮ形導
電形の半導体領域１０を形成しである。かかる構成によ
り、第１の半導体領域７と第２の半導体領域８とにより
、深いＰＮ接合、第３の半導体領域９と第２の半導体領
域８により浅いＰＮ接合が深さ方向に形成される。第３
図は上記２つのＰＮ接合によるホトダイオードをＰ Ｄ
、 、 Ｐ Ｄ２ とした場合の等価回路である。ＰＤ
ｌ［浅いＰＮ接合によるホトダイオード、ＰＤ２ニ深い
ＰＮ接合によるホトダイオードでわる。Next, the impurity concentration is about 1 to 5×10 α, which is approximately the middle level between the semiconductor substrate 6 and the first semiconductor region element, and the thickness is 8.
The second semiconductor region 8 of N type conductivity is formed to have a thickness of 12 μm. After phosphorus ions are implanted into the second semiconductor region by an ion implantation method, the second semiconductor region is formed by thermal diffusion so as to obtain the above conditions. In this example, the implantation acceleration energy was 100 to 6 V, and the diffusion conditions were [1180°C,
It is 16 hours. Furthermore, a third surface semiconductor region 9 of P-type conductivity type having an impurity concentration higher than that of the semiconductor substrate 6 is formed on the second semiconductor region 8 by thermally diffusing boron. Note that the second N-type conductivity type semiconductor region 8
In order to obtain good ohmic contact with the second semiconductor region 80, an N-type conductivity type semiconductor region 10 in which phosphorus is thermally diffused is formed in the chip surface region of the second semiconductor region 80 with an impurity concentration approximately equal to that of the third semiconductor region 9. It is. With this configuration, a deep PN junction is formed by the first semiconductor region 7 and the second semiconductor region 8, and a shallow PN junction is formed by the third semiconductor region 9 and the second semiconductor region 8 in the depth direction. Third
The figure shows the photodiode with the above two PN junctions.
, , P D2 is an equivalent circuit. P.D.
l[A photodiode with a shallow PN junction, PD2 is a photodiode with a deep PN junction.
以上の構成による本発明の半導体装置を用いることによ
り、短波長の光成分をＰ Ｄｌによシ、長波長の光成分
をＦＤ２により光電流として得ることができる。By using the semiconductor device of the present invention having the above configuration, a short wavelength light component can be obtained by the PDl, and a long wavelength light component can be obtained as a photocurrent by the FD2.
第４図＆は本発明の実施例によるところの半導体装置の
相対分光感度特性を示す。浅いＰＮ接合のＦＤ、の相対
分光感度は短波長側に、深いＰＮ接合のＦＤ２の相対分
光感度は長波長側にそれぞれ高い感度を示す。ＦＤ２に
対しては、ＰＤｌの厚み分が光学的なフィルタとして働
いておシ、光吸収特性を積極的に利用した構造となって
いる。第４図すは、ＦＤ２の出力電流Ｉ ＦＤ２ をｐ
ｎｌの出力電流ＩＰＤｊで割り算をし、対数をとった値
の波長特性である。FIG. 4 & shows relative spectral sensitivity characteristics of a semiconductor device according to an embodiment of the present invention. The relative spectral sensitivity of the shallow PN junction FD is high on the short wavelength side, and the relative spectral sensitivity of the deep PN junction FD2 is high on the long wavelength side. For FD2, the thickness of PDl acts as an optical filter, and the structure actively utilizes the light absorption characteristics. Figure 4 shows the output current I FD2 of FD2 as p
This is the wavelength characteristic of the value obtained by dividing by the output current IPDj of nl and taking the logarithm.
このように波長に対しよい直線性が得られ、任意の入射
光に対し、対数値を検出することで、その入射光の波長
が容易に得られる。In this way, good linearity with respect to wavelength is obtained, and by detecting the logarithmic value of any incident light, the wavelength of that incident light can be easily obtained.
発明の効果
本発明によるところの光検知半導体装置は、通常のシリ
コンプロセスにより作成でき、シリコンの光吸収特性を
積極的に利用し、簡単な構造による半導体装置が実現で
きる。この装置は、また、光源の色温度や、色調の検出
が簡単に行なえ、さらＶｃ７３クロコンピユータとの組
み合わせで、光源へのフィードバックをかけ、光源の光
量のコントロール用のセンサなどへも利用できる。Effects of the Invention The photodetecting semiconductor device according to the present invention can be fabricated by a normal silicon process, actively utilizes the light absorption characteristics of silicon, and can realize a semiconductor device with a simple structure. This device can also easily detect the color temperature and tone of the light source, and in combination with a Vc73 black computer, it can be used as a sensor for controlling the amount of light from the light source by applying feedback to the light source.
第１図は従来の光学フィルタを使用した光検出装置の断
面構造図、第２図は本発明による半導体装置の一実施例
の断面構造図、第３図は本発明の一実施例の等価回路図
、第４図乙に本発明の実施例の分光感度特性図、同すは
本発明の実施例の光電流比の波長特性図である。
１ａ、１ｂ、１ｃ・・・・・青、緑、赤フィルタ、２・
・・・・・透明ガラス板、３・・・・・透明電極、４
・・・・アモルファスシリコン、５・・・・コンタクト
電極、６・・・・・Ｐ形半導体基板、７・・・・・Ｐ形
エピタキシャル成長層、８・・・・・Ｎ膨拡散層、９・
・・・・Ｐ膨拡散層、１０・・・・Ｎ型コンタクト拡散
層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
１ｈ１
第３図FIG. 1 is a cross-sectional structural diagram of a photodetecting device using a conventional optical filter, FIG. 2 is a cross-sectional structural diagram of an embodiment of a semiconductor device according to the present invention, and FIG. 3 is an equivalent circuit diagram of an embodiment of the present invention. Figure 4B is a spectral sensitivity characteristic diagram of an embodiment of the present invention, and the same is a wavelength characteristic diagram of a photocurrent ratio of an embodiment of the present invention. 1a, 1b, 1c... Blue, green, red filter, 2.
...Transparent glass plate, 3 ...Transparent electrode, 4
...Amorphous silicon, 5...Contact electrode, 6...P type semiconductor substrate, 7...P type epitaxial growth layer, 8...N swelling diffusion layer, 9...
...P swelling diffusion layer, 10...N type contact diffusion layer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
1h1 Figure 3
Claims (1)
に１×１０＾１＾４ｃｍ＾−＾３以下の不純物濃度を有
するＰ形導電形のエピタキシャル成長による第１の半導
体領域と、リンイオンをイオン注入したのち熱拡散によ
り不純物濃度が１〜５×１０＾１＾５ｃｍ＾−＾３で、
拡散深さが８〜１２μｍであるＮ型導電形の第２の半導
体領域と、第２の半導体領域上に前記半導体基板よりも
大きい不純物濃度を有するＰ形導電形の第３の表面半導
体領域とより成る光検知半導体装置。A first semiconductor region is formed by epitaxial growth of a P-type conductivity type having an impurity concentration of 1 x 10^1^4 cm^-^3 or less on a P-type conductivity type semiconductor substrate having a high impurity concentration, and phosphorus ions are ionized. After implantation, the impurity concentration is 1 to 5 x 10^1^5 cm^-^3 due to thermal diffusion,
a second semiconductor region of N-type conductivity type having a diffusion depth of 8 to 12 μm; and a third surface semiconductor region of P-type conductivity type having an impurity concentration higher than that of the semiconductor substrate on the second semiconductor region. A photodetecting semiconductor device consisting of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138326A JPS6116580A (en) | 1984-07-03 | 1984-07-03 | Optical detection semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138326A JPS6116580A (en) | 1984-07-03 | 1984-07-03 | Optical detection semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6116580A true JPS6116580A (en) | 1986-01-24 |
Family
ID=15219285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59138326A Pending JPS6116580A (en) | 1984-07-03 | 1984-07-03 | Optical detection semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6116580A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162887A (en) * | 1988-10-31 | 1992-11-10 | Texas Instruments Incorporated | Buried junction photodiode |
| US5177581A (en) * | 1990-11-14 | 1993-01-05 | Sharp Kabushiki Kaisha | Light receiving PN junction semiconductor device with silicon nitride film |
| US6833873B1 (en) | 1999-06-30 | 2004-12-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6859229B1 (en) | 1999-06-30 | 2005-02-22 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6882368B1 (en) | 1999-06-30 | 2005-04-19 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6885404B1 (en) | 1999-06-30 | 2005-04-26 | Canon Kabushiki Kaisha | Image pickup apparatus |
| EP1032049A3 (en) * | 1999-02-25 | 2005-10-12 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6980248B1 (en) | 1999-06-30 | 2005-12-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| ITMI20082363A1 (en) * | 2008-12-31 | 2010-07-01 | St Microelectronics Srl | SENSOR INCLUDING AT LEAST ONE DOUBLE-JOINT VERTICAL PHOTODIOD INTEGRATED ON A SEMICONDUCTIVE SUBSTRATE AND ITS INTEGRATION PROCESS |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516494A (en) * | 1978-07-24 | 1980-02-05 | Sharp Corp | Optical semiconductor device |
| JPS57164585A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Photosemiconductor device |
-
1984
- 1984-07-03 JP JP59138326A patent/JPS6116580A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516494A (en) * | 1978-07-24 | 1980-02-05 | Sharp Corp | Optical semiconductor device |
| JPS57164585A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Photosemiconductor device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162887A (en) * | 1988-10-31 | 1992-11-10 | Texas Instruments Incorporated | Buried junction photodiode |
| US5177581A (en) * | 1990-11-14 | 1993-01-05 | Sharp Kabushiki Kaisha | Light receiving PN junction semiconductor device with silicon nitride film |
| EP1032049A3 (en) * | 1999-02-25 | 2005-10-12 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US7235831B2 (en) | 1999-02-25 | 2007-06-26 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6833873B1 (en) | 1999-06-30 | 2004-12-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6859229B1 (en) | 1999-06-30 | 2005-02-22 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6882368B1 (en) | 1999-06-30 | 2005-04-19 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6885404B1 (en) | 1999-06-30 | 2005-04-26 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6980248B1 (en) | 1999-06-30 | 2005-12-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| ITMI20082363A1 (en) * | 2008-12-31 | 2010-07-01 | St Microelectronics Srl | SENSOR INCLUDING AT LEAST ONE DOUBLE-JOINT VERTICAL PHOTODIOD INTEGRATED ON A SEMICONDUCTIVE SUBSTRATE AND ITS INTEGRATION PROCESS |
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