JPS6171625A - Vertical cvd device - Google Patents

Vertical cvd device

Info

Publication number
JPS6171625A
JPS6171625A JP19527084A JP19527084A JPS6171625A JP S6171625 A JPS6171625 A JP S6171625A JP 19527084 A JP19527084 A JP 19527084A JP 19527084 A JP19527084 A JP 19527084A JP S6171625 A JPS6171625 A JP S6171625A
Authority
JP
Japan
Prior art keywords
wafers
wafer holder
wafer
vertical
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19527084A
Other languages
Japanese (ja)
Inventor
Yasuo Uoochi
魚落　泰雄
Yoshimi Shiotani
喜美 塩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19527084A priority Critical patent/JPS6171625A/en
Publication of JPS6171625A publication Critical patent/JPS6171625A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain films having a uniform thickness and a small amount of foreign matter deposit by a method wherein a plurality of wafers are contained in a vertical wafer holder and kept almost horizontal, and a film is grown on a wafer surface in vapor phase under the rotation of the wafer holder. CONSTITUTION:The vertical wafer holder 12 is loaded in the center of a vertical cylindrical reaction tube 11, and the wafer holder is hung down with a supporting rod 12B and can be rotated by turning the supporting rod 12B. Many wafers 13 are contained almost horizontally in the wafer holder 12, these wafers are contained usually by exposing film-forming surfaces and adhering, i.e. with every two pieces back to back. Besides, the gap between adjacent wafers is 10mm or so. The wafer holder 12 with wafers 13 thus contained is rotated by being hung down with the supporting rod 12B. It is slowly rotated at a speed of rotation of approximately 3rev/min. Then, under vacuum suction through an exhaust port 14, the wafers 13 are heated with a heater 15, and the reaction gas is spouted out of the nozzle of a gas inflow tube 16.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は縦型ＣＶＤ装置に係り、特に多数枚のウェハー
に均質な被膜が形成される縦型ＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vertical CVD apparatus, and particularly to a vertical CVD apparatus in which a uniform coating is formed on a large number of wafers.

従来、半導体装置を製造する際、そのウェハープロセス
において、ＣＶＤ装置（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ
Ｏｅｐｏｓ　ｉ　ｔ　ｉｏｎ　；化学気相成長装置）が
使用されており、例えばシリコン膜をエビクキシャル成
長したり、あるいは絶縁膜を被着したりする工程に使用
されている。Conventionally, when manufacturing semiconductor devices, a CVD device (Chemical Vapor
A chemical vapor deposition system (chemical vapor deposition system) is used, for example, in the process of eviaxially growing a silicon film or depositing an insulating film.

このようなＣＶＤ装置においては、ウェハー面に均一な
膜厚で被膜が形成されることが大切で、従前から種々の
方法が提案されている。In such a CVD apparatus, it is important to form a film with a uniform thickness on the wafer surface, and various methods have been proposed.

一方、ＩＣなどの半導体装置はＯＡ機器やその他の電子
機器、並びに他部門のエレクトロニクス化によって需要
が益々増大してきた。それに伴って、ウェハーが大型化
され、ウェハープロセスの製造設備も大幅に変化して、
大型化・量産化してきた。On the other hand, demand for semiconductor devices such as ICs has been increasing due to the use of office automation equipment, other electronic equipment, and electronics in other sectors. Along with this, wafers have become larger and wafer process manufacturing equipment has changed significantly.
They have become larger and mass produced.

従って、ＣＶＤ装置においても、多数の大口径ウェハー
を収容し、それに成長する被膜は均一な膜厚で、高品質
なものが得られるようなＣＶＤ装置が要望されている。Therefore, there is a demand for a CVD apparatus that can accommodate a large number of large diameter wafers and grow a film of uniform thickness and high quality.

［従来の技術］ さて、第３図（ａｌは従来より使用されている一般的な
、横型の減圧ＣＶＤ装置の概要断面図を示しており、同
図（ｂｌはそのＡＡ’断面図である。[Prior Art] Now, FIG. 3 (al is a schematic cross-sectional view of a conventionally used general horizontal reduced pressure CVD apparatus, and FIG. 3 (bl is an AA' cross-sectional view thereof).

図のように、円筒形反応管１の中心にウェハーホルダー
２に収容したウェハー３を装入して、排気口４から真空
吸引する。加熱体５によってウエバー３が加熱され、ガ
ス流入管６のノズルから反応ガスを噴出して、反応管内
を０．５〜Ｉ　Ｔｏｒｒ程度の減圧度にする。そうする
と、反応ガスが反応管内で分解されて、ウェハー３面に
被膜が成長する。As shown in the figure, a wafer 3 housed in a wafer holder 2 is placed in the center of a cylindrical reaction tube 1, and a vacuum is drawn through an exhaust port 4. The webber 3 is heated by the heating element 5, and the reaction gas is ejected from the nozzle of the gas inlet tube 6, thereby reducing the pressure inside the reaction tube to about 0.5 to I Torr. Then, the reaction gas is decomposed within the reaction tube, and a film is grown on the three surfaces of the wafer.

［発明が解決しようとする問題点］ ところが、このような横型構造のＣＶＤ装置にはいくつ
かの問題点があり、その一つは被膜の膜厚がウェハー面
内の位置によって不均一になり易く、且つ、多数のウェ
ハー相互の間で膜厚バラツキが大きくなることである。[Problems to be solved by the invention] However, there are several problems with such a horizontally structured CVD apparatus, one of which is that the film thickness of the film tends to be uneven depending on the position within the wafer surface. , and the variation in film thickness becomes large among a large number of wafers.

これは特に重要なことで、従来からその対策が採られて
おり、ガス流入管６を反応管ｌ内に差し込んでいるのも
その対策であり、また、図示のようにウェハーホルダー
２の下に邪魔板（孔のある板）７を介在させているのも
、その対策の一つである。This is particularly important, and countermeasures have been taken in the past, such as inserting the gas inlet tube 6 into the reaction tube 1, and also inserting the gas inlet tube 6 under the wafer holder 2 as shown in the figure. One of the countermeasures is to provide a baffle plate (a plate with holes) 7.

又、ガス流入管６をウェハー３の下側だけでなく、上下
に２本挿入する方式もあり、また、ガス流入管６を回転
する方法も採られている。しかし、ウェハー内の膜厚分
布並びにウェハー間の膜厚分布を均一にすることは難か
しいことで、且つ、ウェハーが大口径化してきた現在、
そのバラツキは益々顕著になってきた。There is also a method in which two gas inflow tubes 6 are inserted above and below the wafer 3 instead of just below the wafer 3, and a method in which the gas inflow tube 6 is rotated is also adopted. However, it is difficult to make the film thickness distribution within a wafer and between wafers uniform, and now that wafer diameters have become larger,
The dispersion is becoming more and more noticeable.

横型ＣＶＤ装置の他の問題点は、被膜形成面に異物やゴ
ミの付着が多いことである。反応ガスの分解した被膜は
、ウェハー面だけでなくて反応管壁にも付着し、これが
ウェハー面に落下して付着する。又、ウェハーホルダー
が管壁や邪魔板を擦って、これがゴミになってウェハー
面に付着する。Another problem with the horizontal CVD apparatus is that foreign matter and dust often adhere to the film forming surface. The film formed by the decomposition of the reaction gas adheres not only to the wafer surface but also to the reaction tube wall, and falls and adheres to the wafer surface. Also, the wafer holder rubs against the tube wall and baffle plate, which becomes dust and adheres to the wafer surface.

そうすると、成長した被膜に異物やゴミが混入して、膜
質が悪くなる。If this happens, foreign matter and dust will be mixed into the grown film, resulting in poor film quality.

本発明はこれらの欠点を解消させて、且つ、大口径ウェ
ハーに適用できる縦型ＣＶＤ装置を提案するものである
。The present invention solves these drawbacks and proposes a vertical CVD apparatus that can be applied to large diameter wafers.

［問題点を解決するための手段］ その問題は、縦形ウェハーホルダーに複数のウェハーが
収容されて、ほぼ水平に保持され、前記ウェハーホルダ
ーを回転させながら、ウェハー面に被膜を気相成長させ
るようにした縦型ＣＶＤ装置によって解消される。[Means for solving the problem] The problem is that a plurality of wafers are housed in a vertical wafer holder and held almost horizontally, and a film is grown in a vapor phase on the wafer surface while rotating the wafer holder. This problem can be solved by using vertical CVD equipment.

［作用］ 即ち、本発明にかかる縦型ＣＶＤ装置は、ウェハーホル
ダーを回転させることによって、ウェハー内の膜厚分布
を均一にし、且つ、反応管も縦型になっているため、ホ
ルダーが管壁を擦することがなくなって、その付着物が
ウェハー面に付着することもなくなる。加えて、ガス流
入管を管壁に沿って複数本差し込むことが可能になるが
ら、それぞれのガス金を調節することによって、反応ガ
ス分布を管内で制御し易くなり、そのためにウェハー間
の膜厚バラツキが減少する。[Function] That is, the vertical CVD apparatus according to the present invention makes the film thickness distribution within the wafer uniform by rotating the wafer holder, and since the reaction tube is also vertical, the holder can be attached to the tube wall. This eliminates the need to rub the wafer, and prevents the deposits from adhering to the wafer surface. In addition, while it is possible to insert multiple gas inlet tubes along the tube wall, by adjusting the amount of each gas, it becomes easier to control the reaction gas distribution within the tube, which makes it possible to control the film thickness between wafers. Variability is reduced.

［実施１列］ 以下１図面を参照して実施例によって詳細に説明する。[Implementation 1 row] An embodiment will be described in detail below with reference to one drawing.

第１図（ａ）は本発明にかかる減圧ＣＶＤ装置で、第１
ロー）はそのＢＢ“断面図である。FIG. 1(a) shows a low pressure CVD apparatus according to the present invention.
Row) is its BB" cross-sectional view.

図において、１１は縦型の円筒形反応管で、その中心に
は縦形ウェハーホルダー１２が装入され、このウェハー
ホルダーは支持棒１２Ｂによって吊り下げられて、支持
棒１２Ｂを廻して回転することができる。ウェハーホル
ダー１２には、ほぼ水平に多数のウェハー１３が収容さ
れており、このウェハーは通常、被膜形成面を表出させ
裏面を密着して、２枚を背中合わせにして収容しである
。且つ、隣接するウェハー相互の間隙は１０ｍ前後にす
る。In the figure, 11 is a vertical cylindrical reaction tube, and a vertical wafer holder 12 is placed in the center of the tube, and this wafer holder is suspended by a support rod 12B and can be rotated around the support rod 12B. can. A large number of wafers 13 are housed in the wafer holder 12 almost horizontally, and the wafers are usually housed in two back-to-back formats with the film-forming surface exposed and the back surfaces in close contact. In addition, the gap between adjacent wafers is approximately 10 m.

第２図はウェハーホルダー１２の部分斜視図を示してお
り、図のような４本のガイド棒１２Ｇに切欠きを設けて
、その切欠き部分にウェハーを挟んで保持する。４本の
ガイド棒１２Ｇのうち、１本は取外しを可能にしておき
、ウェハー収容時には、それを取外してウェハーを装着
する。FIG. 2 shows a partial perspective view of the wafer holder 12, in which notches are provided in the four guide rods 12G as shown in the figure, and wafers are sandwiched and held in the notches. One of the four guide rods 12G is made removable, and when storing a wafer, it is removed and the wafer is mounted.

このようにして、ウェハー１３を収容したウェハーホル
ダー１２を、支持棒１２Ｂによって吊り下げて回転する
が、回転速度は３回／分程度とゆっくり廻す。か（して
、排気口１４から真空吸引し、加熱体１５によってウェ
ハー１３を加熱して、ガス流入管１６のノズルから反応
ガスを噴出する。In this way, the wafer holder 12 containing the wafer 13 is suspended by the support rod 12B and rotated, but at a slow rotation speed of about 3 times/minute. Then, a vacuum is drawn from the exhaust port 14, the wafer 13 is heated by the heating element 15, and the reaction gas is ejected from the nozzle of the gas inflow pipe 16.

本例では、ガス流入管１６は３本差し込んでおり、反応
管の下段にはガス流入管１６ａから反応ガスを噴出させ
、中段にはガス流入管１６ｂから、また、上段にはガス
流入管１６ｃから反応ガスを噴出させている。このよう
にすれば、それぞれのガス流入量が加減できるから、反
応管内の反応ガス分布を制御し易くなる。In this example, three gas inflow pipes 16 are inserted, and the reaction gas is ejected from the gas inflow pipe 16a in the lower stage of the reaction tube, the gas inflow pipe 16b in the middle stage, and the gas inflow pipe 16c in the upper stage. Reactant gas is ejected from the reactor. In this way, the inflow amount of each gas can be adjusted, making it easier to control the reaction gas distribution within the reaction tube.

又、上記の加熱体も幾つかのゾーンに分離されており、
それぞれが温度調節される。これは、従来の横型と同様
であるが、縦型では加熱ガスが上方に上昇するために、
特に調節が重要である。In addition, the heating element mentioned above is also separated into several zones,
Each is temperature regulated. This is similar to the conventional horizontal type, but in the vertical type, the heated gas rises upwards, so
Adjustment is particularly important.

このような縦型減圧ＣＶＤ装置を使用して、５０枚の６
Ｐ直径ウエハーに膜厚Ｉμｍの燐シリケートガラス（Ｐ
ＳＧ）ＦＡを成長した条件を説明すると、加熱温度を４
２５℃として、 モノシラン（ＳｉＨ４）　　　４０ｃｃ／分フォスフイ
ン（ＰＨ３）２０χ１ｎＮ２　１７ｃｃ／分酸素（０２
）　　　　　　　１２０ｃｃ／分の反応ガスを流入して
減圧度をＩ　Ｔｏｒｒにする。そうして、約１時間反応
させると、均一な膜厚をもったＰＳＧ膜が６！′ウ工ハ
ー面に成長して、それは異物付着の少ない膜であった。Using such a vertical low pressure CVD device, 50 6 sheets
Phosphorus silicate glass (P
SG) To explain the conditions under which FA was grown, the heating temperature was set to 4.
As 25℃, monosilane (SiH4) 40cc/min phosphine (PH3) 20χ1nN2 17cc/min oxygen (02
) A reaction gas of 120 cc/min was introduced to reduce the pressure to I Torr. Then, after reacting for about 1 hour, a PSG film with a uniform thickness was formed. 'It grew on the surface of the wafer, and it was a film with little foreign matter adhesion.

［発明の効果コ 従って、上記の説明から明らかなように、本発明にかか
る縦型ＣＶＤ装置によれば、大口径ウェハーに対処させ
て、均一な膜厚か得られ、且つ、異物付着の少ない被膜
が得られる利点が大きいものである。[Effects of the Invention] Therefore, as is clear from the above description, the vertical CVD apparatus according to the present invention can handle large-diameter wafers, obtain a uniform film thickness, and have less foreign matter adhesion. This method has a great advantage in that a film can be obtained.

尚、本発明は減圧型のみならず、常圧型にも適用できる
ことは云うまでもない。It goes without saying that the present invention is applicable not only to the reduced pressure type but also to the normal pressure type.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）および（ｂ）は本発明にかかる縦型ＣＶＤ
装置のαり断面図と、そのＢＢ’断面図、第２図はその
ウェハーホルダーの部分斜視図、第３図（ａ）および（
′ｂ）は従来の横型ＣＶＤ装置の側断面図と、そのＡＡ
’断面図である。 図において、 １は横型円筒形反応管、２はウェハーホルダー、３．１
３はウェハー、　　　４．１４は排気口、５．１５は加
熱体、　　　　６．１６はガス流入管、１１は縦型円筒
形反応管、 １２はウェハーホルダー、１２Ｂはその回転支持棒、１
２Ｇはガイド欅、 １６ａ　、　１６ｂ　、　１６ｃはそれぞれ下段、中段
、上段のガス流入管 を示している。 第１図 第２１１１ 第３図FIGS. 1(a) and 1(b) show vertical CVD according to the present invention.
Figure 2 is a partial perspective view of the wafer holder, Figure 3 (a) and (
'b) is a side sectional view of a conventional horizontal CVD device and its AA
'This is a cross-sectional view. In the figure, 1 is a horizontal cylindrical reaction tube, 2 is a wafer holder, and 3.1
3 is a wafer, 4.14 is an exhaust port, 5.15 is a heating element, 6.16 is a gas inflow pipe, 11 is a vertical cylindrical reaction tube, 12 is a wafer holder, 12B is its rotation support rod, 1
Reference numeral 2G indicates a guide pipe, and 16a, 16b, and 16c indicate lower, middle, and upper gas inflow pipes, respectively. Figure 1 Figure 2111 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 縦形ウェハーホルダーに複数のウェハーが収容されて、
ほぼ水平に保持され、前記ウェハーホルダーを回転させ
ながら、ウェハー面に被膜を気相成長させるようにした
ことを特徴とする縦型ＣＶＤ装置。Multiple wafers are housed in a vertical wafer holder,
A vertical CVD apparatus characterized in that the wafer holder is held substantially horizontally and a film is grown in a vapor phase on the wafer surface while the wafer holder is rotated.
JP19527084A 1984-09-17 1984-09-17 Vertical cvd device Pending JPS6171625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19527084A JPS6171625A (en) 1984-09-17 1984-09-17 Vertical cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19527084A JPS6171625A (en) 1984-09-17 1984-09-17 Vertical cvd device

Publications (1)

Publication Number Publication Date
JPS6171625A true JPS6171625A (en) 1986-04-12

Family

ID=16338360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19527084A Pending JPS6171625A (en) 1984-09-17 1984-09-17 Vertical cvd device

Country Status (1)

Country Link
JP (1) JPS6171625A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01109714A (en) * 1987-10-22 1989-04-26 Nec Corp Vapor-phase epitaxy appratus
JPH01220434A (en) * 1988-02-29 1989-09-04 Tel Sagami Ltd Heat treating furnace
JPH1012559A (en) * 1996-06-07 1998-01-16 Samsung Electron Co Ltd Chemical vapor deposition apparatus for manufacturing semiconductors
US6074486A (en) * 1997-04-22 2000-06-13 Samsung Electronics Co., Ltd. Apparatus and method for manufacturing a semiconductor device having hemispherical grains
US6953739B2 (en) 1997-04-22 2005-10-11 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumps
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883856A (en) * 1981-11-13 1983-05-19 Canon Inc Photoconductive member
JPS58110034A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Vertical vapor phase epitaxial device
JPS58133376A (en) * 1982-01-26 1983-08-09 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetron bias sputtering method and device
JPS5973496A (en) * 1982-10-19 1984-04-25 Matsushita Electric Ind Co Ltd Vapor-phase growth apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883856A (en) * 1981-11-13 1983-05-19 Canon Inc Photoconductive member
JPS58110034A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Vertical vapor phase epitaxial device
JPS58133376A (en) * 1982-01-26 1983-08-09 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetron bias sputtering method and device
JPS5973496A (en) * 1982-10-19 1984-04-25 Matsushita Electric Ind Co Ltd Vapor-phase growth apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US8186077B2 (en) 2007-01-22 2012-05-29 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium

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