JPS6168391A - Apparatus for producing belt-like silicon crystal - Google Patents
Apparatus for producing belt-like silicon crystalInfo
- Publication number
- JPS6168391A JPS6168391A JP19112884A JP19112884A JPS6168391A JP S6168391 A JPS6168391 A JP S6168391A JP 19112884 A JP19112884 A JP 19112884A JP 19112884 A JP19112884 A JP 19112884A JP S6168391 A JPS6168391 A JP S6168391A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- dies
- shaped silicon
- band
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は帯状シリコン結晶製造装置の改良に関する。[Detailed description of the invention] [Technical field of invention] TECHNICAL FIELD The present invention relates to improvements in an apparatus for producing band-shaped silicon crystals.
［発明の技術的背景１
近来、太陽光発電コストの減少のための一環として太陽
電池用シリコン基板の価格低下が望まれており、帯状シ
リコン結晶は、インゴット結晶を切断・加工する際に生
じるような材料損失がなく、加工費も安いことから有望
視されている。[Technical Background of the Invention 1 In recent years, there has been a desire to lower the price of silicon substrates for solar cells as part of efforts to reduce solar power generation costs. It is viewed as promising because there is no significant material loss and processing costs are low.
本発明者らは、結晶成長が容易で長時間、安定に成長を
継続できる新規な帯状シリコン結晶製造装置を提案した
く特願昭５８−５３５３４号など）。第４図は上記帯状
シリコン結晶製造装置の概略構成図である。図中１１は
グラファイト製のルツボであり、このルツボ１１内には
シリコン融液１２が収容されている。ルツボ１１の上方
には結晶成長用ダイ１３ａ、１３ｂがそれぞれ設置され
ている。The inventors of the present invention would like to propose a new belt-shaped silicon crystal manufacturing apparatus that can easily grow crystals and can continue to grow stably for a long time (Japanese Patent Application No. 58-53534, etc.). FIG. 4 is a schematic diagram of the apparatus for producing band-shaped silicon crystals. In the figure, 11 is a crucible made of graphite, and a silicon melt 12 is accommodated in this crucible 11. Crystal growth dies 13a and 13b are installed above the crucible 11, respectively.
ダイ１３ａ、１３ｂがはルツボ１１の外部に５σけられ
た固定部１４ａ、１４ｂにそれぞれ取り付けられている
。また、ルツボ１１の底面下部にはルツボ１１を加熱す
るヒータ（図示せず）が設けられ、これとは別にダイ１
３ａ、１３ｂをそれぞれ独立に加熱するヒータ１５ａ、
１５ｂが上記固定部１４ａ、１４ｂに設けられている。The dies 13a and 13b are attached to fixing parts 14a and 14b, respectively, which are cut outside the crucible 11 by 5σ. Further, a heater (not shown) for heating the crucible 11 is provided at the bottom of the crucible 11, and a die 1
a heater 15a that independently heats 3a and 13b;
15b is provided on the fixing portions 14a, 14b.
図中１６はヒータ１５ａ、１５ｂの側部からの熱放射に
よりルツボ温度が乱されないようにするための熱シール
ドである。また、以上述べた全ての構成要素はアルゴン
ガスを充満させた金属容器（図示せず）の中に収納され
ており、さらに該容器の上方には帯状シリコン結晶を上
方に引上げるための引上げ駆動部（図示せず）が配設さ
れる。In the figure, 16 is a heat shield for preventing the crucible temperature from being disturbed by heat radiation from the sides of the heaters 15a, 15b. Furthermore, all of the above-mentioned components are housed in a metal container (not shown) filled with argon gas, and above the container there is a pulling drive for pulling the band-shaped silicon crystal upward. (not shown) is provided.
第５図は上記装置による帯状シリコン結晶成長の概念図
である。結晶成長用ダイ１３ａ、１３ｂの間隔よりやや
幅のせまい種結晶１７をシリコン融液１２に接触させる
と種結晶１７付近のシリコン融液が持上げられ図中ハツ
チングで示したメニスカス１８が形成され、固液界面１
９は凹形となる。種結晶１７を引上げるとその下に結晶
成長用ダイ１３ａ、１３ｂの間隔で規定された幅をもつ
帯状シリコン結晶２０が成長する。メニスカス１８の高
さくシリコン融液１２の自由液面から固液界面１９の底
部まで）は約７〜８Ｍ、ダイ１３ａ。FIG. 5 is a conceptual diagram of band-shaped silicon crystal growth using the above-mentioned apparatus. When the seed crystal 17, whose width is slightly narrower than the interval between the crystal growth dies 13a and 13b, is brought into contact with the silicon melt 12, the silicon melt near the seed crystal 17 is lifted up, forming a meniscus 18 shown by hatching in the figure, and solidifying. liquid interface 1
9 is concave. When the seed crystal 17 is pulled up, a band-shaped silicon crystal 20 with a width defined by the interval between the crystal growth dies 13a and 13b grows below it. The height of the meniscus 18 (from the free liquid surface of the silicon melt 12 to the bottom of the solid-liquid interface 19) is about 7 to 8 M, and the height of the die 13a.
１３ｂとｆｌ Ｉ晶１７の側部との間のメニスカス１８
の幅は約１＃である。Meniscus 18 between 13b and the side of fl I crystal 17
The width of is approximately 1#.
上述の帯状シリコン結晶製造装置によれば、メニスカス
１８の高さ、及びダイ１３ａ、１３ｂと固液界面１９と
の距離が大きいため（例えばＥ ｄｇｅ−ｄｅ４ｉｎｅ
ｄ Ｆ ｉｌｍ−ｆｅｄ ＧｒＯＷｔｈ法（ＥＦＧ法）
においては、キャピラリダイ頂上のメニスカス高さは０
．２５Ｍ程度）多少の温度変動が生じても結晶成長用ダ
イ１３ａ、１３ｂと帯状シリコン結晶２０が固着したり
、帯状シリコン結晶２０がメニスカス１８と離れ結晶が
切れたりすることが少なく、安定に長時間成長が継続で
きることが特徴である。According to the above-mentioned belt-shaped silicon crystal manufacturing apparatus, since the height of the meniscus 18 and the distance between the dies 13a, 13b and the solid-liquid interface 19 are large (for example, Edge-de-4ine
d Film-fed GrOWth method (EFG method)
, the meniscus height at the top of the capillary die is 0.
．． (approximately 25M) Even if slight temperature fluctuations occur, crystal growth dies 13a and 13b and the band-shaped silicon crystal 20 are unlikely to stick together, or the band-shaped silicon crystal 20 separates from the meniscus 18 and the crystal is not cut, and the crystal growth can be performed stably for a long time. It is characterized by its ability to continue growing.
［背景技術の問題点］
しかしながら、第４図に示した帯状シリコン結晶製造装
置においても、なんらかの原因によりシリコン融液温度
が変動すると、結晶切れや固着が生じるという問題点が
あった。即ち、液温の上昇で結晶切れが、液温の下降で
固着がそれぞれ起こり、結晶成長が中断してしまうので
ある。第６図（ａ）、（ｂ）はそれぞれ左側のダイ１３
ａにおいて結晶切れが生じかけた時、生じた直後を模式
的に表わした図、第７図（ａ）（ｂ）は同様に固着が生
じかけた時、生じた直後を模式的に表わした図である。[Problems with Background Art] However, even in the belt-shaped silicon crystal production apparatus shown in FIG. 4, there is a problem in that crystal breakage or sticking occurs when the temperature of the silicon melt changes for some reason. That is, crystal breakage occurs when the liquid temperature rises, and fixation occurs when the liquid temperature falls, resulting in the interruption of crystal growth. FIGS. 6(a) and 6(b) show the die 13 on the left side, respectively.
Fig. 7(a) and (b) are diagrams schematically showing when crystal breakage is about to occur and immediately after it occurs in Fig. 7a, and Fig. 7 (a) and (b) are diagrams schematically showing when crystal breakage is about to occur and immediately after it has similarly occurred. It is.
注目すべき点は、ダイ１３ａと結晶２０との間のメニス
カス１８の幅または高さが微妙に変化する点である。What should be noted is that the width or height of the meniscus 18 between the die 13a and the crystal 20 changes slightly.
これらの中断現象を物理的に説明すると次のようになる
。自由融液面より帯状シリコン結晶を引上げる場合メニ
スカス１８の高さは通常７〜８ ｍｍとなる。固液界面
はシリコンの融点（１４２０℃）の等温線（等濡面）と
考えることができ、この高さは液温の影響を受け、高温
の場合高く、低温では低くなるが、表面張力に関するラ
プラスの差圧方程式を解くと上記の７〜８間のメニスカ
ス高となる。帯状結晶の本製造方法において固液界面１
つか凹形になっているのは左右のダイ１３ａ。A physical explanation of these interruption phenomena is as follows. When a band-shaped silicon crystal is pulled up from the free melt surface, the height of the meniscus 18 is usually 7 to 8 mm. The solid-liquid interface can be thought of as an isothermal line (isowetting surface) at the melting point of silicon (1420°C), and this height is affected by the liquid temperature, being higher at high temperatures and lower at low temperatures, but it is related to surface tension. Solving Laplace's differential pressure equation results in a meniscus height between 7 and 8 as described above. In this method for producing band-shaped crystals, the solid-liquid interface 1
The left and right dies 13a are concave.
１３ｂを加熱しているため等混線が凹形となるためであ
り、同時に、ダイ１３ａ、１３ｂと結晶２０との間で毛
細管現象の効果があり、融液は７〜８胴より高くまで上
がる。さて、結晶左側のダイ１３ａ付近で温度上昇が生
じた場合、第合図（ａ）の如く、左側ダイ１３８近くの
固液界面１９（すなわち１４２０°Ｃの等混線）が図の
右側による。This is because the isomixing becomes concave because the dies 13b are heated, and at the same time, there is an effect of capillarity between the dies 13a, 13b and the crystal 20, and the melt rises to a higher level than the 7th and 8th cylinders. Now, when a temperature rise occurs near the die 13a on the left side of the crystal, the solid-liquid interface 19 near the left die 138 (i.e., the isomixture line at 1420° C.) is caused by the right side of the figure, as shown in the second figure (a).
引上げを続けると結晶２０の幅が狭くなり左側ダイ１３
ａと結晶２０の距離が大きくなる。このため上述した毛
細管効果が小さくなり、左側ダイ１３ａの部分にはもは
や融液が張られず同図（ｂ）のように結晶切れとなる。As the pulling continues, the width of the crystal 20 becomes narrower and the left die 13
The distance between a and the crystal 20 increases. For this reason, the capillary effect mentioned above is reduced, and the melt is no longer spread over the left die 13a, resulting in crystal breakage as shown in FIG. 13(b).
これとは逆に左利ダイ１３ａ付近で温度が下がると、第
７図（ａ）の如く左側ダイ１３ａ近くの固液界面１９が
図の左側による。ダイ１３ａの温度が１４２０’Ｃ以下
にならなければ結晶幅がやや広くなるだけで結晶成長は
継続するが、温度が下がりすぎると同図（ｂ）のように
ダイ１３ａと結晶２０が固着する。ただしダイの鉛直方
向の温度は下方で高くなっているため、固着現象は結晶
切れに比べれば発生率が低い。On the contrary, when the temperature decreases near the left-hand die 13a, the solid-liquid interface 19 near the left-hand die 13a shifts to the left side of the figure, as shown in FIG. 7(a). If the temperature of the die 13a does not fall below 1420'C, the crystal width will only become slightly wider and the crystal growth will continue, but if the temperature drops too much, the die 13a and the crystal 20 will stick together as shown in FIG. However, since the temperature in the vertical direction of the die is higher at the bottom, the occurrence rate of the sticking phenomenon is lower than that of crystal breakage.
このような中断現雫を防ぐには従来次のような手法によ
っていた。つまり、結晶切れが起こりそうな場合、ヒー
タ入力を減少せしめルツボ温度もしくはダイ１３ａ、１
３ｂの温度を下げるか、あるいは引上げ速度を遅くする
ことにより中断現象を避け、ダイと結晶とが固着しそう
な場合、逆にルツボ温度もしくはダイ温度を上げるか、
あるいは引上げ速度を速くして固着を防いだ。ところが
ルツボやダイの温度の増減、は、系の熱容量の関係で応
答に時間がかかり、中断現象にまにあわないことがまま
あり、−万引上げ速度の加減は結晶の厚さに温度による
以上に大きな影響を与えるという不利な点があった。ま
た他にダイ１３ａ、１３ｂを左右に移動させ、両ダイの
間隔を変えるという手段により中断現象を防ぐこともあ
る程度可能であるが、移動させる距離が微妙で、例えば
固着現象を防ごうとしてダイ間隔を広げると逆に結晶切
れが生じるなど熟練を要する方法である。Conventionally, the following methods have been used to prevent such interruptions. In other words, if crystal breakage is likely to occur, reduce the heater input to increase the crucible temperature or die 13a, 1.
Avoid the discontinuation phenomenon by lowering the temperature of 3b or slowing down the pulling speed, and if the die and crystal are likely to stick together, conversely raise the crucible temperature or die temperature, or
Alternatively, the pulling speed was increased to prevent sticking. However, when the temperature of the crucible or die increases or decreases, it takes time to respond due to the heat capacity of the system, and the interruption phenomenon is often not met. It had the disadvantage of having an impact. In addition, it is possible to prevent the interruption phenomenon to some extent by moving the dies 13a and 13b left and right and changing the interval between the two dies, but the distance to be moved is delicate and, for example, the interval between the dies may be changed to prevent the sticking phenomenon. This is a method that requires skill, as spreading the crystals can cause crystal breakage.
上述した中断現象は、±３℃程度の温度変動により生じ
るもので、ＥＦＧ法において同様の現象が±１℃以内の
温度変動によっても生じるのに比べればまだ欠点として
は小さいが、結晶の連続成長、ひいてはシリコン基板の
低コスト化に向けては克服すべき点であった。The above-mentioned interruption phenomenon occurs due to temperature fluctuations of about ±3°C, and although it is still a small drawback compared to the EFG method, where a similar phenomenon occurs due to temperature fluctuations within ±1°C, it does not affect the continuous growth of crystals. This was a point that needed to be overcome in order to lower the cost of silicon substrates.
［発明の目的］
本発明は上述の問題点に鑑みて成されたものであり、本
発明の目的は、帯状シリコン結晶成長の際に生じ得る温
度変動の許容幅を大きくでき、従って結晶成長の長時間
安定化及び製造コストの低減化をはかり得る帯状シリコ
ン結晶製造装置を提供することにある。[Object of the Invention] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to increase the allowable range of temperature fluctuations that may occur during the growth of band-shaped silicon crystals, and therefore to improve the speed of crystal growth. An object of the present invention is to provide a belt-shaped silicon crystal manufacturing apparatus that can be stabilized for a long time and reduce manufacturing costs.
［発明の慨要］
上記目的を達成し得る本発明の骨子は、前述した１対の
結晶成長用ダイの相対するそれぞれの面を鉛直方向に対
し傾斜させることにある。[Summary of the Invention] The gist of the present invention, which can achieve the above object, is that the opposing surfaces of the pair of crystal growth dies described above are inclined with respect to the vertical direction.
すなわち、本発明は、ルツボ内に収容されたシリコン融
液に種結晶を接触させ、この種結晶を引上げることによ
り帯状シリコン結晶を成長せしめる装置において、成長
すべき帯状シリコン結晶の幅方向両端部の外側に、該端
部と対向するよう配置された一対の結晶成長用ダイと、
これらのダイを加熱する手段とを具備し、上記一対の結
晶成長用ダイが成長すべき帯状シリコン結晶の端部に対
応する上記一対の結晶成長用ダイの相対するそれぞれの
面が鉛直方向に対し傾斜して成ることを特徴とする。That is, the present invention provides an apparatus for growing a band-shaped silicon crystal by bringing a seed crystal into contact with a silicon melt housed in a crucible and pulling up the seed crystal. a pair of crystal growth dies disposed outside the end so as to face the end;
means for heating these dies, and each of the opposing surfaces of the pair of crystal growth dies corresponding to the ends of the band-shaped silicon crystal to be grown by the pair of crystal growth dies are perpendicular to the vertical direction. It is characterized by being sloped.
［発明の実施例１ 第１図は本発明の一実施例を示す模式図である。[Embodiment 1 of the invention FIG. 1 is a schematic diagram showing an embodiment of the present invention.
グラフフィト製ルツボ１１にシリコン融液１２が収容さ
れており、ルツボ１１の上方には結晶成長用ダイ１３ａ
、１３ｂが１０口の間隔でそれぞれ設置されている。そ
の他、ルツボ加熱用ヒータ（図示せず）、ダイを加熱す
るヒータ（図示せず）などの構成や、成長装置の全体的
な構成は第４図の説明において述べたものと同様である
。第１図における本発明の特徴はダイ１３ａ、１３ｂが
それぞれ鉛直方向に対して傾斜して設置された点であり
、本実施例では、鉛直方向に対してそれぞれ５°の傾斜
で１対のダイ１３ａ、１３ｂが上方で広く、下方で狭く
なるようにｇＱＮされている。またこれらのダイ１３ａ
、１３ｂはそれぞれ上下、左右方向に移動できるように
しである。A silicon melt 12 is contained in a graphite crucible 11, and a crystal growth die 13a is placed above the crucible 11.
, 13b are installed at intervals of 10 ports. In addition, the configurations of the crucible heating heater (not shown), the die heating heater (not shown), and the overall configuration of the growth apparatus are the same as those described in the explanation of FIG. 4. The feature of the present invention in FIG. 1 is that the dies 13a and 13b are installed at an angle with respect to the vertical direction, and in this embodiment, a pair of dies are installed at an angle of 5° with respect to the vertical direction. 13a and 13b are gQNd so that they are wide at the top and narrow at the bottom. Also, these dies 13a
, 13b are movable in the vertical and horizontal directions, respectively.
上記装置により帯状シリコン結晶を製造した場合の安定
性について第２図を参考にして述べる。The stability of band-shaped silicon crystals produced using the above apparatus will be described with reference to FIG.
第２図（ａ）は定常的に結晶成長がなされている場合で
あり、第５図に示した場合と同様である。FIG. 2(a) shows a case where crystal growth is performed steadily, and is similar to the case shown in FIG. 5.
同図（ｂ）は結晶の左側ダイ１３ａの付近でなんらかの
要因により温度上昇が生じた場合であり、第６図で説明
したように固液界面１９がダイ１３ａから遠ざかり図の
右側の方へ移り、結晶成長を続けると結晶幅が狭くなる
。従来の装置では前述した如くこのままでは左側ダイ１
３ａと結晶２０との間隔が広くなりこの間にもはや融液
が張られなくなり結晶切れが生じたのであるが、本発明
の装置によればダイ１３ａが傾斜しているため結晶幅が
狭くなっても同図（Ｃ）のように左側ダイ１３ａ側の融
液がやや低くなったところで再び安定した固液界面１つ
を形成することができ、結晶切れは起こらず成長を継続
することができる。この際、ヒータの加熱量を変化させ
たり、ダイを移動させる必要がなく、極めて成長が容易
になった。Figure (b) shows a case where a temperature rise occurs due to some reason in the vicinity of the die 13a on the left side of the crystal, and as explained in Figure 6, the solid-liquid interface 19 moves away from the die 13a and moves toward the right side of the figure. , as the crystal continues to grow, the crystal width becomes narrower. In the conventional device, as mentioned above, the left die 1
The distance between the die 13a and the crystal 20 becomes wider, and the melt is no longer stretched between them, causing crystal breakage.However, according to the device of the present invention, the die 13a is inclined, so even if the crystal width becomes narrow, When the melt on the left side of the die 13a becomes slightly lower as shown in FIG. 3C, one stable solid-liquid interface can be formed again, and crystal breakage does not occur and growth can be continued. At this time, there was no need to change the heating amount of the heater or move the die, making growth extremely easy.
このように本実施例の装置によれば、結晶幅の変動が±
０．４ｍＭとはなるものの原料シリコンの連続供給を行
いながらの結晶成長のＮ続時間が従来の装置によった場
合、平均３時間であったものが１０ＲＩＪ以上にのびた
。In this way, according to the device of this embodiment, fluctuations in crystal width can be reduced to ±
Although the concentration was 0.4 mM, the N duration of crystal growth while continuously supplying raw material silicon was 3 hours on average when using a conventional device, but increased to more than 10 RIJ.
ところで上述の如き一対の結晶成長用ダイを上方で広く
、下方で狭くなるように傾斜させた場合は結晶とダイの
固着現象に、とっては従来装置より有利というわけでは
なかった。しかしながら、固着現象の発生は結晶切れよ
りまれであるため、上述の実施例で結晶の連続成員にと
ってかなりの効果があった。そうはいっても固着現象が
生じることがあったため、発明者は以下の如き装置を考
え実施した。即ち、第３図がその装置により結晶成長を
行っている模式図で、改良点は結晶成長用ダイ１３ａ、
１３ｂが中央部で狭く、かつ、上方部及び下方部で広く
なっているところである。この実施例では、ダイ１３ａ
、１３ｂの傾斜は上方。Incidentally, when a pair of crystal growth dies as described above are tilted such that they are wide at the top and narrow at the bottom, this is not more advantageous than the conventional apparatus in terms of the phenomenon of sticking of the crystal and the die. However, since the occurrence of sticking phenomena is rarer than crystal breakage, the above-described embodiments had a considerable effect on the continuous membership of crystals. Even so, the sticking phenomenon sometimes occurred, so the inventor conceived and implemented the following device. That is, FIG. 3 is a schematic diagram showing crystal growth performed by the apparatus, and the improvements include the crystal growth die 13a,
13b is narrow at the center and wide at the upper and lower parts. In this embodiment, die 13a
, 13b slopes upward.
下方とも鉛直方向に対して５°とし、中央部には曲率を
もたせた。同図（ａ）は定常的に結晶が成長している場
合であり、固液界面１つの底部がダイ１３ａ、１３ｂの
鉛直方向のほぼ中央部にくるように系を調整した。即ち
、成長中に連続供給する原料シリコンの量を成長した結
晶の１と同じくなるように設定し、シリコン融液面を一
定に保った。同図（ｂ）は、左側ダイ１３ａの近（で濃
度上昇が生じた場合の図であり、この場合は、前述の実
施例と全く同一の効果により結晶成長は継続する。また
同図（Ｃ）は左側ダイ１３ａの近くで温度下降が起った
場合であるが、結晶２０とダイ１３ａとの間隔が下方に
向かって広がっているため、固着は生じにくい。The lower part was set at 5° with respect to the vertical direction, and the center part had a curvature. Figure (a) shows the case where crystals are growing steadily, and the system was adjusted so that the bottom of one solid-liquid interface was located approximately in the vertical center of the dies 13a, 13b. That is, the amount of raw material silicon continuously supplied during growth was set to be equal to 1 of the grown crystal, and the silicon melt surface was kept constant. FIG. 3(b) is a diagram showing a case where a concentration increase occurs in the vicinity of the left die 13a. In this case, crystal growth continues due to the same effect as in the above-mentioned embodiment. ) is a case where a temperature drop occurs near the left die 13a, but since the distance between the crystal 20 and the die 13a widens downward, sticking is less likely to occur.
この第２の実施例で説明した装置により成長継続時間は
更に長くなり２４時間成長を続けても中断現象は生じな
かった。With the apparatus described in this second example, the growth duration was even longer, and no interruption occurred even after 24 hours of growth.
なお、本発明の帯状シリコン結晶製造装置の構成はこれ
までに述べたのに限定されるものではない。例えば、１
対の結晶成長用ダイの間隔を上方で狭く下方で広くなる
ように傾斜させると、結晶向上する。また、前述の実施
例ではダイの傾斜角を鉛直方向に対して５°としたが、
傾斜角はこれに限定されるものではない。また本発明で
は、成長中断現象を防止する為、従来技術と何重のダイ
を移動させるという操作を併用することもできる。Note that the configuration of the belt-shaped silicon crystal manufacturing apparatus of the present invention is not limited to that described above. For example, 1
If the distance between a pair of crystal growth dies is inclined so that it is narrower at the top and wider at the bottom, crystallization is improved. In addition, in the above embodiment, the inclination angle of the die was 5° with respect to the vertical direction.
The angle of inclination is not limited to this. Further, in the present invention, in order to prevent the growth interruption phenomenon, the conventional technique and the operation of moving several layers of dies can be used together.
その池水発明の趣旨を逸脱しない範囲でさまざまに変形
して実施することができる。The invention can be modified and implemented in various ways without departing from the spirit of the invention.
［発明の効果コ
以上述べたように、本発明による帯状シリコン結晶製造
装置を用いれば結晶成長中の温度変動の許容範囲が従来
の装置による場合より広くなり、結晶成長の中断現象の
発生率が極めて低くなるため、成長継続時間が向上する
という効果がある。[Effects of the Invention] As described above, by using the belt-shaped silicon crystal manufacturing apparatus according to the present invention, the allowable range of temperature fluctuations during crystal growth is wider than when using a conventional apparatus, and the incidence of interruption of crystal growth is reduced. This has the effect of improving the growth duration since it becomes extremely low.
また同時に従来装置で必要であった成長中断現象を防止
するための熟練を要する操作が、不要もしくは簡単にな
り成長技術が容易になるという利点もある。At the same time, there is also the advantage that operations that require skill to prevent growth interruption phenomena, which were necessary in conventional apparatuses, are unnecessary or simplified, and the growth technique becomes easier.
一方、本発明の特に第２の実施例に示した装置によれば
ルツボに収容したシリコン融液の温度を下げても固着減
少が生じにクク、融液温度を下げられる分だけ成長速度
が向上するという効果がある。On the other hand, according to the apparatus shown in the second embodiment of the present invention, even if the temperature of the silicon melt contained in the crucible is lowered, the adhesion decreases, and the growth rate is improved by the amount that the melt temperature can be lowered. It has the effect of
また、本発明の装置は、結晶成長用ダイの間隔を成長中
にも変更でき結晶の幅を任意に変えられるのであるが本
発明によるダイ形状を用いればこの操作が容易になると
いう利点がある。In addition, the apparatus of the present invention can change the interval between the crystal growth dies even during growth, and the width of the crystal can be changed arbitrarily, and the use of the die shape according to the present invention has the advantage that this operation becomes easy. .
第１図は本発明の一実′施例を示す模式図、第２図は本
発明の一実施例による結晶成長の様子を説明する模式図
、第３図は本発明の他の実施例を示す模式図、第４図は
従来の帯状シリコン結晶製造装置の概略構成図、第５図
は従来の装置による結晶成長の概念図、第６図及び第７
図は従来の装置における結晶成長の中断現象を説明する
。模式図である。
１１・・・ルツボ、１２・・・シリコン融液、１３ａ。
１３ｂ・・・結晶成長用ダイ、１４ａ、１４ｂ・・・固
定部、１５ａ、１５ｂ・・・ダイ加熱用ヒータ、１６・
・・熱シールド、１７・・・ｆ！結晶、１８・・・メニ
スカス、１９・・・固液界面、２０・・・帯状シリコン
結晶。
出願人代理人 弁理士 鈴江武彦
第１図
■
第２図
第３図
第４図
第７図FIG. 1 is a schematic diagram showing one embodiment of the present invention, FIG. 2 is a schematic diagram explaining the state of crystal growth according to one embodiment of the present invention, and FIG. 3 is a schematic diagram showing another embodiment of the present invention. 4 is a schematic diagram of a conventional band-shaped silicon crystal manufacturing apparatus, FIG. 5 is a conceptual diagram of crystal growth using a conventional apparatus, and FIGS. 6 and 7 are schematic diagrams.
The figure illustrates the phenomenon of interruption of crystal growth in a conventional apparatus. It is a schematic diagram. 11... Crucible, 12... Silicon melt, 13a. 13b...Crystal growth die, 14a, 14b...Fixing part, 15a, 15b...Die heating heater, 16.
...Heat shield, 17...f! Crystal, 18... Meniscus, 19... Solid-liquid interface, 20... Band-shaped silicon crystal. Applicant's agent Patent attorney Takehiko Suzue Figure 1 ■ Figure 2 Figure 3 Figure 4 Figure 7
Claims (6)
触させ、この種結晶を引上げることにより帯状シリコン
結晶を成長せしめる装置において、成長すべき帯状シリ
コン結晶の幅方向両端部の外側に、該端部と対向するよ
う配置された一対の結晶成長用ダイと、これらのダイを
加熱する手段とを具備し、上記一対の結晶成長用ダイが
成長すべき帯状シリコン結晶の端部に対応する上記一対
の結晶成長用ダイの相対するそれぞれの面が鉛直方向に
対し傾斜をして成ることを特徴とする帯状シリンコ結晶
製造装置。(1) In an apparatus that grows a band-shaped silicon crystal by bringing a seed crystal into contact with a silicon melt contained in a crucible and pulling up the seed crystal, the outside of both ends in the width direction of the band-shaped silicon crystal to be grown is , comprising a pair of crystal growth dies arranged to face the ends and means for heating these dies, the pair of crystal growth dies corresponding to the ends of the band-shaped silicon crystal to be grown. A belt-shaped silinco crystal manufacturing apparatus characterized in that the opposing surfaces of the pair of crystal growth dies are inclined with respect to the vertical direction.
記一対の結晶成長用ダイの相対するそれぞれの面は、そ
れら面の間隔が上方で広く、下方で狭くなるように、傾
斜して成ることを特徴とする特許請求の範囲第１項記載
の帯状シリコン結晶製造装置。(2) The opposing surfaces of the pair of crystal growth dies corresponding to the ends of the band-shaped silicon crystal to be grown are inclined such that the distance between the surfaces is wide at the top and narrow at the bottom. An apparatus for manufacturing band-shaped silicon crystals according to claim 1, characterized in that:
記一対の結晶成長用ダイの相対するそれぞれの面は、そ
れら面の間隔が上方で狭く、下方で広くなるように、傾
斜して成ることを特徴とする特許請求の範囲第１項記載
の帯状シリコン結晶製造装置。(3) The opposing surfaces of the pair of crystal growth dies corresponding to the ends of the band-shaped silicon crystal to be grown are inclined such that the distance between the surfaces is narrow at the top and wide at the bottom. An apparatus for manufacturing band-shaped silicon crystals according to claim 1, characterized in that:
記一対の結晶成長用ダイの相対するそれぞれの面は、そ
れら面の間隔が中央部で狭く、上方部及び下方部で広く
なるように傾斜して成ることを特徴とする特許請求の範
囲第１項記載の帯状シリコン結晶製造装置。(4) The opposing surfaces of the pair of crystal growth dies corresponding to the ends of the band-shaped silicon crystal to be grown are arranged such that the distance between the surfaces is narrow in the center and wide in the upper and lower portions. 2. The belt-shaped silicon crystal manufacturing apparatus according to claim 1, wherein the belt-shaped silicon crystal manufacturing apparatus is inclined.
リコンを加熱する加熱機構とは別の加熱機構により上記
ダイを加熱するものであることを特徴とする特許請求の
範囲第１項記載の帯状シリコン結晶製造装置。(5) The means for heating each die is heated by a heating mechanism different from a heating mechanism that heats the silicon in the crucible. Band-shaped silicon crystal manufacturing equipment.
方向及び左右方向に移動自在に設けられていることを特
徴とする特許請求の範囲第１項記載の帯状シリコン結晶
製造装置(6) The belt-shaped silicon crystal manufacturing apparatus according to claim 1, wherein the pair of crystal growth dies are each independently movable in the vertical and horizontal directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19112884A JPS6168391A (en) | 1984-09-12 | 1984-09-12 | Apparatus for producing belt-like silicon crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19112884A JPS6168391A (en) | 1984-09-12 | 1984-09-12 | Apparatus for producing belt-like silicon crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6168391A true JPS6168391A (en) | 1986-04-08 |
| JPH0154320B2 JPH0154320B2 (en) | 1989-11-17 |
Family
ID=16269334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19112884A Granted JPS6168391A (en) | 1984-09-12 | 1984-09-12 | Apparatus for producing belt-like silicon crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6168391A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115722750A (en) * | 2022-10-21 | 2023-03-03 | 郑州机械研究所有限公司 | Copper-aluminum wire clamp induction brazing device and brazing method thereof |
-
1984
- 1984-09-12 JP JP19112884A patent/JPS6168391A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115722750A (en) * | 2022-10-21 | 2023-03-03 | 郑州机械研究所有限公司 | Copper-aluminum wire clamp induction brazing device and brazing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0154320B2 (en) | 1989-11-17 |
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