JPS6155918A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPS6155918A JPS6155918A JP17805684A JP17805684A JPS6155918A JP S6155918 A JPS6155918 A JP S6155918A JP 17805684 A JP17805684 A JP 17805684A JP 17805684 A JP17805684 A JP 17805684A JP S6155918 A JPS6155918 A JP S6155918A
- Authority
- JP
- Japan
- Prior art keywords
- film
- impurities
- coated
- semiconductor manufacturing
- ceramic sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、気相成長装置、拡散装置や熱処理装置などの
ように高温の処理室内で半導体基板(以下ウニ・・とい
う)に処理を施こすための半導体製造装置に関するもの
である。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for processing a semiconductor substrate (hereinafter referred to as a sea urchin) in a high-temperature processing chamber such as a vapor phase growth device, a diffusion device, or a heat treatment device. The present invention relates to semiconductor manufacturing equipment.
従来、前記のような半導体製造装置の処理室全形成する
反応管、ベルジャ等はもちろん、処理室内に位置する例
えばサセグタ支えやボートなどの部品を石英で形成して
いた。石英は耐化学性、耐熱性に優れているため、使用
されてきたものであるが1機械的強度が低く、破損し易
い欠点を有している。この石英に代る材料として、Si
、Nい4本
8iC,Aj+Nの単[ま念はSi、N、と1.0.と
の複合体などを主成分としたセラミックス焼結体が着目
されつつちる。これらのセラミックス焼結体は。Conventionally, reaction tubes, bell jars, etc. that form the entire processing chamber of semiconductor manufacturing equipment as described above, as well as parts such as susceptor supports and boats located inside the processing chamber, have been made of quartz. Quartz has been used because it has excellent chemical resistance and heat resistance, but it has the disadvantage of low mechanical strength and easy breakage. As a material to replace this quartz, Si
, N 4 pieces 8iC, Aj+N single [I'm thinking of Si, N, and 1.0. Ceramic sintered bodies whose main component is a composite of These ceramic sintered bodies.
耐化学性、耐熱性に富むと共に機械的強度が高く。It has high chemical resistance, heat resistance, and mechanical strength.
成形加工により比較的複雑な形状のものが得られると共
に研磨による機械加工も可能であるため。This is because relatively complex shapes can be obtained by molding, and machining by polishing is also possible.
優れた材料である。しかしながら、これらの焼結体は、
現在の技術ではY、 O,、CeO2,AJ20. 、
MfO等の焼結助剤を添加しなければ、焼結すること
が難かしく、また前記の主成分でろるセラミックの原料
粉は製造過程でボールミルにより粉砕する際、Fe等の
不純物を混入してしまう。このように焼結助剤や不純物
を含むセラミックス焼結体金1例えはサセプタ支えやボ
ートなどのような処理室内に位置する装置構成部品に用
いると、前記の焼結助鴬剤や不純物が遊離してウニ・〜
を汚染することがあり、使用条件の配慮や使用前に十分
熱処理して焼結助剤を飛ばしておく必要があるなどの問
題を生ずることがあった。It is an excellent material. However, these sintered bodies
With current technology, Y, O,, CeO2, AJ20. ,
It is difficult to sinter unless a sintering aid such as MfO is added, and impurities such as Fe may be mixed in when the raw material powder of the ceramic, which consists of the main components mentioned above, is ground in a ball mill during the manufacturing process. Put it away. In this way, when ceramic sintered gold containing sintering aids and impurities is used for equipment components located in the processing chamber, such as susceptor supports and boats, the sintering aids and impurities are liberated. And sea urchin...
This can lead to problems such as the need to take into account the conditions of use and thoroughly heat-treat the sintering aid before use to remove the sintering aid.
本発明は、前述したようなセラミックス焼結体を処理室
内の装置構成部品として用いる場合に。The present invention is applicable to the case where a ceramic sintered body as described above is used as a component of a device inside a processing chamber.
前記のようなウニ・−の汚染をより確実に防止すること
を目的とするものである。The purpose is to more reliably prevent the contamination of sea urchins as described above.
本発明は、前述したようなセラミックス焼結体の表面に
高純度の5I3N、またはSiCの膜全コーティングし
、セラミックス焼結体からの不純物の遊離を押えるよう
にしたものである。In the present invention, the surface of the ceramic sintered body as described above is entirely coated with a film of high purity 5I3N or SiC to suppress the release of impurities from the ceramic sintered body.
以下本発明の一実施例を第1因および第2図により説明
する。第1図は半導体製造装置の1つである縦型気相成
長装置を示すもので、1はペース。An embodiment of the present invention will be described below with reference to the first factor and FIG. Figure 1 shows a vertical vapor phase growth apparatus, which is one type of semiconductor manufacturing equipment, where 1 indicates pace.
2はベルジャで、これらにより密閉さ′t″Lfc処理
室(以下、反応室という)3全形成する。4はペース1
を貫通して反応室3内に伸びる中空の回転軸で、下方に
設けた図示しないモータにより回転金与えられるように
なっている。回転軸4の上端には、後述するサセプタ支
え5が取付けられ、このサセプタ支え5にサセプタ6が
取付けられている。2 is a bell jar, which forms the entire sealed 't''Lfc processing chamber (hereinafter referred to as reaction chamber) 3. 4 is a pace 1
It is a hollow rotating shaft that extends into the reaction chamber 3 through the shaft, and is rotated by a motor (not shown) provided below. A susceptor support 5, which will be described later, is attached to the upper end of the rotating shaft 4, and a susceptor 6 is attached to this susceptor support 5.
相成長プロセスに必要な種々のガス金噴出するようにな
っている。The various gases required for the phase growth process are designed to emit gold.
9flRFコイルで、ボルトl Oft介してコイル支
え11に支持されている。RFコイル9およびコイル支
え11は、ペース1上に載置されtコイルカバー12に
より被われている。It is a 9 fl RF coil and is supported by a coil support 11 via a bolt l Of. The RF coil 9 and coil support 11 are placed on the pace 1 and covered by a t-coil cover 12.
前記サセプタ支え5は、第2図に拡大して示すように、
母材部分5aの全表面に膜5bt−コーティングしたも
のである。この母材部分5atl。The susceptor support 5, as shown enlarged in FIG.
The entire surface of the base material portion 5a is coated with a film 5bt. This base material portion 5atl.
Si、 N、 、 SiC,AJNの単体まfc tr
y S i3N、とl、 O。Single unit of Si, N, , SiC, AJN fc tr
y S i3N, and l, O.
との複合体からなる粉末セラミックスを主成分とし、こ
れらにY、 0. 、 CeO2、A7I、 O,また
n M y O等の焼結助剤を添加して焼結成形し、研
磨により機械加工し、その全表面に高純度のSi、N、
またはSiCの膜5biコーティングしr(ものである
。The main component is powdered ceramics consisting of a composite of Y, 0. , CeO2, A7I, O, and sintering aids such as nM y O are added and machined by polishing, and the entire surface is coated with high-purity Si, N,
Or coated with SiC film 5bis.
なお、前記膜5bの形成は、CVD法によれば、極めて
高純度にできると共に、ち密で母材部分5aに対する密
着強度も高く、剥離の起こらないコーティングができる
。The film 5b can be formed by the CVD method with extremely high purity, and a coating that is dense and has high adhesion strength to the base material portion 5a and does not peel off.
次いで本装置の作用について説明する。RFコイル9に
よりサセプタ6を加熱し、その上に載置サレタウエハ1
3を加熱し、ガスノズル7)孔8から反応ガスを噴出さ
せ、ウェハ13の表面に気相成長させる。このとき、サ
セプタ支え5も加熱され、膜5b’lコーティングして
いない場合には、サセプタ支え5中の焼結助剤や不純物
などが飛び出して1反応室3中に遊離し、反応ガスに混
入して気相成長層にドーグされ、該気相成長層の比抵抗
などの特性を変化させてしまうが、前記のような膜5b
をコーティングすると、前記のような不純物の遊離が確
実に押えられ、サセプタ支え5VC前述したようなセラ
ミックス焼結体音用いtことによる不具合を防止するこ
とができる。Next, the operation of this device will be explained. The susceptor 6 is heated by the RF coil 9, and the susceptor wafer 1 is placed on it.
3 is heated and a reactive gas is ejected from the gas nozzle 7) hole 8 to cause vapor phase growth on the surface of the wafer 13. At this time, the susceptor support 5 is also heated, and if the film 5b'l is not coated, the sintering aid and impurities in the susceptor support 5 will fly out and be liberated into the reaction chamber 3, mixing with the reaction gas. However, the film 5b as described above is doped with the vapor-phase grown layer and changes the characteristics such as resistivity of the vapor-phase grown layer.
By coating the susceptor support 5VC, the release of impurities as described above can be reliably suppressed, and problems caused by the use of the ceramic sintered body as described above can be prevented.
前述し念実施例は1本発明金すセグタ支え5に適用した
例を示したが、コイルカバー12が単にペース1上に載
置されているのみで、その内部が反応室3から完全に隔
離されておらず、かつコイル支え11を前述したような
セラミックス焼結体で形成した場合には、このコイル支
え11にも前記膜5bと同様の膜全コーティングするこ
とが好ましい。なお、サセプタ支え5やコイル支え11
自身を電気的絶縁体として使用する場合には、5ick
絶縁性がないので使用できず、これ金剛いるときは別の
絶縁材を介在させる必要がある。The above-mentioned embodiment shows an example in which the present invention is applied to the metal segment support 5, but the coil cover 12 is merely placed on the pace 1, and the inside thereof is completely isolated from the reaction chamber 3. If this is not the case and the coil support 11 is formed of a ceramic sintered body as described above, it is preferable that this coil support 11 is also entirely coated with a film similar to the film 5b. In addition, the susceptor support 5 and the coil support 11
When using itself as an electrical insulator, 5ick
It cannot be used because it has no insulating properties, and if this is necessary, another insulating material must be used.
また1本発明は、気相成長装置に限らず、拡散装置や熱
処理装置などの高温の処理室内でウニ・・に処理を施こ
す種々の半導体製造装置に対しても同様に適用できるこ
とは言うまでもない。It goes without saying that the present invention is not limited to vapor phase growth equipment, but can also be applied to various semiconductor manufacturing equipment that processes sea urchins in high-temperature processing chambers such as diffusion equipment and heat treatment equipment. .
以上述べたように本発明によれば5装置構成部品VCセ
ラミックス焼結体音用いたことによるつ工パへの皿形4
[−防止することができ、セラミックス焼結体の採用に
より、装置の剛性1機械的精度をアップして取扱いを容
易にすると共により高品質の半導体装置を製造すること
〃・できる。As described above, according to the present invention, the dish-shaped 4
By using a ceramic sintered body, it is possible to increase the rigidity and mechanical precision of the device, making it easier to handle and manufacturing higher quality semiconductor devices.
第2図に示したサセグタ支え5の母材部分5aを第1表
に示す組成のセラミックス焼結体で作り。The base material portion 5a of the susceptor support 5 shown in FIG. 2 is made of a ceramic sintered body having the composition shown in Table 1.
その表面にCVD法によりSi、N、の膜5bをα3m
m の厚さにコーティングした。A film 5b of Si, N, α3m is formed on the surface by CVD method.
It was coated to a thickness of m.
第 1 表
他方、一般に用いられている石英製のサセズタ支えと、
第1表の組成のセラミックス焼結体で形成し前記の膜5
bi設けないサセグタ支えを用いて、同一の条件でノン
ドーグで気相成長層金形成し、3者の比抵抗値を測定し
たころ、膜5bk設けないセラミックス焼結体の場曾に
は、1回目の気相成長でFi+、gΩ−0,2回目は2
6Ω−cm。Table 1 On the other hand, commonly used quartz support supports,
The film 5 is formed of a ceramic sintered body having the composition shown in Table 1.
When the resistivity values of the three materials were measured under the same conditions using a susegrator support without a bi layer and the resistivity values of the three materials were measured, it was found that the first Fi+, gΩ-0 by vapor phase growth, 2 for the second time
6Ω-cm.
3回目は34Ω−口と回全重ねるに連れて値が増加した
が、石英製の場合の2500−(2)に比較して著しく
低く、不純物によるドープが生じているのに対し、前記
膜5bをコーディングした場合には230Ω−cmとほ
ぼ石英製並みの値が得られ念。The third time, the value increased as the number of cycles increased to 34Ω, but it was significantly lower than 2500-(2) in the case of quartz, indicating that doping with impurities had occurred, whereas the film 5b If you code it, you will get a value of 230Ω-cm, which is almost the same value as quartz.
なお、膜5bを設けない場合に1回を重ねるに連れて比
抵抗値が増加し念のは、セラミックス焼結体からの不純
物の遊離が最初は激しく1回?重ねるに連れて減少する
ためと考えられ、前もって熱処理すればある値に安定す
るものと思われる。In addition, when the film 5b is not provided, the specific resistance value increases as the cycles are repeated, and the reason is that the release of impurities from the ceramic sintered body is intense at first. This is thought to be because it decreases as it is stacked, and it is thought that it will stabilize at a certain value if heat treated in advance.
第1図は本発明を適用した縦型気相成長装置の概要断面
図、第2図はサセグタ支えの拡大断面図である。
1・・・ベース、2・・・ベルジャ、3・・・反応室、
4・・回転軸、5・・・サセグタ支え、5a・・・母材
部分、5b・・・膜、6・・・サセプタ、7・・・ガス
ノズル。
9・・・RFコイル、+1・・・コイル支え、12・・
・コイルカバー、+3・・・ウェハ。FIG. 1 is a schematic sectional view of a vertical vapor phase growth apparatus to which the present invention is applied, and FIG. 2 is an enlarged sectional view of a susegrator support. 1... Base, 2... Bell jar, 3... Reaction chamber,
4...Rotating shaft, 5...Susegator support, 5a...Base material portion, 5b...Membrane, 6...Susceptor, 7...Gas nozzle. 9...RF coil, +1...Coil support, 12...
・Coil cover, +3... wafer.
Claims (1)
部品を処理室内に有する半導体製造装置において、前記
セラミックス焼結体の表面に高純度のSi_3N_4ま
たはSiCの膜をコーティングしたことを特徴とする半
導体製造装置。 2、前記コーティングがCVD法によつて形成されてい
ることを特徴とする特許請求の範囲第1項記載の半導体
製造装置。[Scope of Claims] 1. In a semiconductor manufacturing apparatus having device components formed of a ceramic sintered body in a processing chamber, the surface of the ceramic sintered body is coated with a film of high purity Si_3N_4 or SiC. A semiconductor manufacturing device characterized by: 2. The semiconductor manufacturing apparatus according to claim 1, wherein the coating is formed by a CVD method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17805684A JPS6155918A (en) | 1984-08-27 | 1984-08-27 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17805684A JPS6155918A (en) | 1984-08-27 | 1984-08-27 | Semiconductor manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6155918A true JPS6155918A (en) | 1986-03-20 |
Family
ID=16041830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17805684A Pending JPS6155918A (en) | 1984-08-27 | 1984-08-27 | Semiconductor manufacturing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6155918A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS636833A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Ceramics Co Ltd | Vapor growth apparatus |
JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
JPH06151555A (en) * | 1992-11-12 | 1994-05-31 | Mitsui Eng & Shipbuild Co Ltd | Semiconductor transfer jig |
US6645303B2 (en) * | 1996-11-14 | 2003-11-11 | Applied Materials, Inc. | Heater/lift assembly for high temperature processing chamber |
-
1984
- 1984-08-27 JP JP17805684A patent/JPS6155918A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS636833A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Ceramics Co Ltd | Vapor growth apparatus |
JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
JPH06151555A (en) * | 1992-11-12 | 1994-05-31 | Mitsui Eng & Shipbuild Co Ltd | Semiconductor transfer jig |
JP2621749B2 (en) * | 1992-11-12 | 1997-06-18 | 三井造船株式会社 | Jig for semiconductor transportation |
US6645303B2 (en) * | 1996-11-14 | 2003-11-11 | Applied Materials, Inc. | Heater/lift assembly for high temperature processing chamber |
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