JPS6155780B2 - - Google Patents

Info

Publication number
JPS6155780B2
JPS6155780B2 JP10501979A JP10501979A JPS6155780B2 JP S6155780 B2 JPS6155780 B2 JP S6155780B2 JP 10501979 A JP10501979 A JP 10501979A JP 10501979 A JP10501979 A JP 10501979A JP S6155780 B2 JPS6155780 B2 JP S6155780B2
Authority
JP
Japan
Prior art keywords
electrode
ohmic
layer
forming
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10501979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5629340A (en
Inventor
Hirohisa Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP10501979A priority Critical patent/JPS5629340A/ja
Publication of JPS5629340A publication Critical patent/JPS5629340A/ja
Publication of JPS6155780B2 publication Critical patent/JPS6155780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • H01L2224/83805Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10501979A 1979-08-20 1979-08-20 Formation of electrode on semiconductor element Granted JPS5629340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10501979A JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10501979A JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Publications (2)

Publication Number Publication Date
JPS5629340A JPS5629340A (en) 1981-03-24
JPS6155780B2 true JPS6155780B2 (fr) 1986-11-29

Family

ID=14396341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10501979A Granted JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Country Status (1)

Country Link
JP (1) JPS5629340A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320282U (fr) * 1986-07-18 1988-02-10

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867078A (ja) * 1981-10-19 1983-04-21 Toshiba Corp 化合物半導体素子製造方法
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
JP2008140811A (ja) * 2006-11-30 2008-06-19 Victor Co Of Japan Ltd 半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320282U (fr) * 1986-07-18 1988-02-10

Also Published As

Publication number Publication date
JPS5629340A (en) 1981-03-24

Similar Documents

Publication Publication Date Title
CN101188265B (zh) 半导体发光元件及其制造方法
CN100372137C (zh) 具有上下电极结构的铟镓铝氮发光器件及其制造方法
JP4189710B2 (ja) 発光ダイオードの製造方法
US8309377B2 (en) Fabrication of reflective layer on semiconductor light emitting devices
JP3896044B2 (ja) 窒化物系半導体発光素子の製造方法およびその製品
CN108198926A (zh) 一种薄膜型AlGaInP发光二极管芯片及其制备方法
CN111564393B (zh) 一种led芯片的转移方法
JP5287837B2 (ja) 窒化ガリウム系化合物半導体発光素子およびその負極
JP3013786B2 (ja) 半導体装置の製造方法
JPS6155780B2 (fr)
CN108538998B (zh) 一种led芯片及其制作方法
JP3344296B2 (ja) 半導体発光素子用の電極
JP4284722B2 (ja) 半導体発光素子の製造方法
JPH05291186A (ja) 半導体チップの表面上に金属コンタクトを形成する方法
JPS6148776B2 (fr)
JP2005203765A (ja) 窒化ガリウム系化合物半導体発光素子およびその負極
JP2868693B2 (ja) Ledアレイの製造方法
JPS58220446A (ja) 化合物半導体装置の製造方法
JP3152474B2 (ja) 発光ダイオ−ド
JP3729437B2 (ja) 化合物半導体素子の製造方法
JP3582973B2 (ja) 化合物半導体素子の製造方法
KR100883864B1 (ko) 반도체 소자의 제조 방법
JPS5942982B2 (ja) 化合物半導体装置の電極形成方法
JP2000349331A (ja) 半導体発光素子の製造方法
JPS6133277B2 (fr)