JPS6153162A - Voltage depending non-linear resistor ceramic composition - Google Patents
Voltage depending non-linear resistor ceramic compositionInfo
- Publication number
- JPS6153162A JPS6153162A JP59171991A JP17199184A JPS6153162A JP S6153162 A JPS6153162 A JP S6153162A JP 59171991 A JP59171991 A JP 59171991A JP 17199184 A JP17199184 A JP 17199184A JP S6153162 A JPS6153162 A JP S6153162A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- voltage
- varistor
- ceramic composition
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子機器や電気機器で発生する異常電圧、ノイ
ズ、静電気などを吸収もしくは除去するSrT103
f主成分とする電圧依存性非直線抵抗体を得るための電
圧依存性非直線抵抗体磁器組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to SrT103, which absorbs or removes abnormal voltage, noise, static electricity, etc. generated in electronic and electrical equipment.
The present invention relates to a voltage-dependent nonlinear resistor ceramic composition for obtaining a voltage-dependent nonlinear resistor having f as a main component.
従来例の構成とその問題点
従来、各種電子機器、電気機器における異常高電圧(以
下サージと呼ぶ)の吸収、雑音の除去。Conventional structure and its problems Traditionally, it has been used to absorb abnormally high voltages (hereinafter referred to as surges) and remove noise in various electronic and electrical devices.
火花消去などのために電圧依存性非直線抵抗特性を有す
るSiCバリスタやZno系ノ(リスクなどが使用され
ていた。このような)くリスクの電圧−電流特性は近似
的に次式のように表わすことができる。SiC varistors and Zno-based varistors with voltage-dependent nonlinear resistance characteristics have been used to eliminate sparks, etc.The voltage-current characteristics of such varistors are approximately expressed as follows: can be expressed.
1=(v/C)(L
ここで、工は電流、■は電圧、Cは)<リスク固有の定
数であり、αは電圧非直線指数でおる。1=(v/C)(L Here, engineering is the current, ■ is the voltage, C is a constant specific to risk, and α is the voltage nonlinear index.
SiCバリスタのαは2〜7程度、ZnO系ハIJスタ
ではαが60にもおよぶものがある。このようなバリス
タはサージのように比較的高い電圧の吸収には優れた性
能を有しているが、誘電率が低く固有静電容量が小さい
ため、バリスタ電圧以下の低い電圧(例えばノイズなど
)の吸収に対してはほとんど効果を示さず、また誘電損
失角(tanδ)も5〜10%と大きい。The α of SiC varistors is about 2 to 7, and the α of some ZnO-based IJ stars is as high as 60. Although such varistors have excellent performance in absorbing relatively high voltages such as surges, their low dielectric constant and small specific capacitance prevent them from absorbing low voltages below the varistor voltage (e.g. noise). It has almost no effect on the absorption of , and the dielectric loss angle (tan δ) is as large as 5 to 10%.
一方、これら低電圧のノイズなどの除去には組成や焼成
条件全適当に選択することにより、見かけの誘電率が5
X10’〜6X10’程度でtanδが1チ前後の半導
体磁器コンデンサが利用されている。On the other hand, to remove these low voltage noises, the apparent dielectric constant can be reduced to 5 by appropriately selecting the composition and firing conditions.
Semiconductor ceramic capacitors with a size of about X10' to 6X10' and a tan δ of around 1 inch are used.
しかし、このような半導体磁器コンデンサはサージなど
によりある限度以上の電流が素子に印加されると破壊し
たり、コンデンサとしての機能を果たさなくなったりす
る。However, such semiconductor ceramic capacitors break down or cease to function as a capacitor when a current exceeding a certain limit is applied to the element due to a surge or the like.
上記のような理由で電気機器、電子機器においては、サ
ージ吸収やノイズ除去などの目的のために通常バリスタ
とコンデンサおよび他の部品(例えばコイルなど)とを
組み合わせて使用され、例えばノイズフィルタはこのよ
うな構成になっている。For the reasons mentioned above, in electrical and electronic equipment, varistors are usually used in combination with capacitors and other parts (e.g. coils) for purposes such as surge absorption and noise removal.For example, noise filters use this combination. It is structured like this.
第1図は一般的な従来のノイズフィルタ回路?示し、第
2図はバリスタとコンデンサおよびコイル?組み合わせ
て構成された従来のノイズフィルタ回路を示している。Is Figure 1 a typical conventional noise filter circuit? Figure 2 shows the varistor, capacitor, and coil? A conventional noise filter circuit configured in combination is shown.
ここで、1はコイル、2はコンデンサ、3はバリスタで
ある。Here, 1 is a coil, 2 is a capacitor, and 3 is a varistor.
しかし、第1図に示したノイズフィルタはサージに弱く
、第2図に示したノイズフィルタは部品点数が多く、比
較的大型となるため機器全体の小形化動向に相反し、コ
スト高になるといった欠点金有していた。However, the noise filter shown in Figure 1 is vulnerable to surges, and the noise filter shown in Figure 2 has many parts and is relatively large, which contradicts the trend toward miniaturization of overall equipment and increases costs. It had its drawbacks.
発明の目的
本発明は上記のような従来のサージ吸収、ノイズ除去に
おける欠点全除去し、バリスタとコンデンサの両方の機
能を有し、1個の素子でサージ吸収およびノイズ除去が
可能な複合機能を有するノくリスクを作るのに好適な磁
器組成物全提供すること金目的としている。Purpose of the Invention The present invention eliminates all of the drawbacks of conventional surge absorption and noise removal as described above, and provides a composite function that has the functions of both a varistor and a capacitor, and can perform surge absorption and noise removal with a single element. It is our objective to provide a complete porcelain composition suitable for making metals with no risks.
発明の構成
本発明では上記目的を達成するために、SrとTiミノ
子比率がSx /Ti =−1,060〜0.950の
5rTiO3f93.000〜99.995モル%と、
Y2O3ヲ0.001〜2.000 モル%と、Co2
03to、001〜2.000モル%と、CuO’i
0.001〜1.000 モ# %と、Aq2゜2 o
、oo 1〜1.000 モル %と、Mno2ヲQ、
001〜1.000モル%含有してなる電圧依存性非直
線抵抗体磁器組成物、およびSrとTiの原子比率がS
r/Ti == 1.050〜0.960 (7) S
rT io3’l< 91.000〜99.994モル
%と、Y2O3’e 0.001〜2.000 モル%
と、Co2O3ヲo、001〜2.000モルモル、C
uOffi 0.001〜1.ooo モル%と、Aq
20 ’i 0.001〜1.000 モ/l。Structure of the Invention In order to achieve the above object, the present invention uses 5rTiO3f of 93.000 to 99.995 mol %, with a Sr and Ti minor ratio of Sx/Ti = -1,060 to 0.950;
Y2O3 0.001-2.000 mol% and Co2
03to, 001 to 2.000 mol%, and CuO'i
0.001~1.000Mo#% and Aq2゜2o
,oo 1 to 1.000 mol %, and Mno2woQ,
001 to 1.000 mol% of the voltage dependent nonlinear resistor ceramic composition, and the atomic ratio of Sr and Ti is S
r/Ti == 1.050~0.960 (7) S
rTio3'l<91.000-99.994 mol% and Y2O3'e 0.001-2.000 mol%
and Co2O3wo, 001 to 2.000 molmol, C
uOffi 0.001-1. ooo mole% and Aq
20'i 0.001-1.000 mo/l.
チと、MnO□’i 0.001〜1.000 モル%
と、B2O3゜NiO、MoO2,BeO、Fe2O3
、AjL203 、 L i 20 、 Cr2O3。and MnO□'i 0.001 to 1.000 mol%
and B2O3゜NiO, MoO2, BeO, Fe2O3
, AjL203, L i 20 , Cr2O3.
PbO,CaO,TlO2,P2O5,5b203.Y
2O,カらナル群から選択された少なくとも一種類以上
の酸化物を0.001〜2.Oo○モル%含有してなる
電圧依存性非直線抵抗体磁器組成物に係わるものである
。PbO, CaO, TlO2, P2O5, 5b203. Y
2O, at least one kind of oxide selected from the kanal group, in an amount of 0.001 to 2. The present invention relates to a voltage-dependent nonlinear resistor ceramic composition containing Oo○mol%.
実施例の説明
以下に本発明による実施例を挙げて具体的に説明、する
。DESCRIPTION OF EMBODIMENTS Examples according to the present invention will be specifically explained below.
〈実施例〉
時間粉砕混合し、乾燥させた後再び粉砕し、プレス圧1
.o t/crA で80φ×60t(lW+)に仮成
形する。<Example> Pulverized for a time, mixed, dried, crushed again, press pressure 1
.. Temporarily formed into 80φ×60t (lW+) at ot/crA.
上記成形体’11200℃で4時間焼成し、再びボール
ミルなどで約20時間粉砕して主原料となる5rTi○
3を作成した。The above molded body was fired at 11200°C for 4 hours, and then ground again for about 20 hours using a ball mill etc. to form the main raw material, 5rTi○.
3 was created.
次に、5rTi○3.Y2O3、Co 203 、Cu
o 、A(Y2O,MnO2およびB2O3,NtO、
MoO2,BeO、Fe2O3,Afi203゜”Lt
20.Cr2O3,PbO,CaO,Tt02.p2O
5,5b2O3.Y2O5を下記の第1表に示す組成比
になるように秤量し、ボールミルなどで約12時間混合
し、乾燥後全重量に対して約10wt% のポリビニル
アルコールなどの有機結合剤を加えて造粒した後、プレ
ス圧1、Ot/crIl で10φ×1t(r爾)の
円板状に成形する。Next, 5rTi○3. Y2O3, Co203, Cu
o, A(Y2O, MnO2 and B2O3, NtO,
MoO2, BeO, Fe2O3, Afi203゜"Lt
20. Cr2O3, PbO, CaO, Tt02. p2O
5,5b2O3. Weigh Y2O5 so that it has the composition ratio shown in Table 1 below, mix it in a ball mill etc. for about 12 hours, and after drying, add about 10 wt% of an organic binder such as polyvinyl alcohol based on the total weight and granulate it. After that, it is formed into a disk shape of 10φ×1t (r) with a press pressure of 1 and Ot/crIl.
−上記成形体を空気中で1000℃、2時間焼成した後
、N2(oo%) +)(2(10%)の還元雰囲気中
で約14QO℃、2時間焼成し、次に再び空気中で12
00℃、3時間焼成して第3図に示す素子4を得た。- After firing the above molded body in air at 1000°C for 2 hours, it was fired in a reducing atmosphere of N2 (oo%) +) (2 (10%)) at about 14QO°C for 2 hours, and then again in air. 12
After firing at 00° C. for 3 hours, a device 4 shown in FIG. 3 was obtained.
次に、上記素子4の両平面に銀などの導電性ペースト金
塗布し660℃で焼付けることにより、電極5,6を形
成した。Next, electrodes 5 and 6 were formed by coating conductive paste gold such as silver on both surfaces of the element 4 and baking it at 660°C.
上記の操作によって得られた素子の特性全以下の第2表
に示す。The characteristics of the device obtained by the above operations are all shown in Table 2 below.
以下余白
く第2表〉
ここで、素子のバリスタとしての特性評価は上述した電
圧−電流特性式
%式%)
(ただし、Iは電流、■は電圧、Cはバリスタ固有の定
数、αは非直線指数)KおけるαとCによって行うこと
が可能でちる。しかし、Cの正確な測定は困難であるた
め、本発明においては1mAのバリスタ電流k流した時
の単位厚み当9のバリスタ電圧(以下V、mA/mと呼
ぶ)の値と、α=1/20q(■10mA/v1m八)
(ただし、Vlo 011 Aは10mへのバリスタ電
流を・流した時のバリスタ電圧、VlrxxAは1mA
のバリスタ電流を流した時のバリスタ電圧)の値に上り
バリスタとしての特性評価を行っている。Table 2 is shown below in the margin. Here, the characteristic evaluation of the element as a varistor is the voltage-current characteristic formula % formula % described above. (However, I is the current, ■ is the voltage, C is a constant specific to the varistor, and α is It can be done by α and C in K (linear index). However, since accurate measurement of C is difficult, in the present invention, the value of the varistor voltage (hereinafter referred to as V, mA/m) per unit thickness when 1 mA of varistor current k flows, and α = 1 /20q (■10mA/v1m8)
(However, Vlo 011 A is the varistor voltage when the varistor current is flowing to 10 m, and VlrxxA is 1 mA.
The characteristics of the varistor are evaluated based on the value of the varistor voltage (when the varistor current is applied).
また、コンデンサとしての特性評価は測定周波数1kH
xにおける誘電率ε、誘電損失角tanδで行っている
。In addition, the characteristic evaluation as a capacitor was performed at a measurement frequency of 1kHz.
The dielectric constant ε at x and the dielectric loss angle tan δ are used.
以上に示したように基本的に必要とするバリスタ固有と
コンデンサ特性は素体の粒界に生じる高抵抗バリヤによ
り発現される。As shown above, the essentially required characteristics of the varistor and capacitor are realized by the high resistance barrier produced at the grain boundaries of the element body.
従って、粒子内部を高抵抗化することなく粒界のみt高
抵抗化する添加物が有効となる。Therefore, additives that increase the resistance only at the grain boundaries without increasing the resistance inside the grains are effective.
5rTi03に添加物としてY2O3,Co203IC
u○。Y2O3, Co203IC as additives to 5rTi03
u○.
Aq20.Mn02f加えることにより、比較的バリス
タ電圧が低く、しかも誘電率の大きい素体が得られる。Aq20. By adding Mn02f, an element body having a relatively low varistor voltage and a high dielectric constant can be obtained.
さらに、これらにB2O3,NtO、MoO2,BeO
、F e203゜Lt20.An□03.Cr2O3,
PbO,CaO、Tio2.p2O5゜5b2O3.■
2O5ヲ加えると、バリスタ電圧を変えることなく、α
を改善することができる。そして、Sr/Ti の比率
は半導体化に大きく影響し、規定した範囲外では半導体
化が抑制され、誘電率が小さくなる。Furthermore, these include B2O3, NtO, MoO2, BeO
, F e203°Lt20. An□03. Cr2O3,
PbO, CaO, Tio2. p2O5゜5b2O3. ■
By adding 2O5, α can be increased without changing the varistor voltage.
can be improved. The Sr/Ti 2 ratio greatly influences semiconductor formation, and outside the specified range, semiconductor formation is suppressed and the dielectric constant becomes small.
また、それぞれの添加量が規定量の範囲より少ない場合
には効果を示さないし、規定量の範囲を超えるとバリス
タ電圧が急増し、誘電率の低下金へくため望筐しくない
。Moreover, if the amount of each additive is less than the specified amount range, no effect will be shown, and if the amount exceeds the specified amount range, the varistor voltage will increase rapidly and the dielectric constant will decrease, which is not desirable.
文学た、実施例では添加物の組合せについては−部のみ
示したが、どのような組合せでも規定の範囲内であれば
同様の効果があること全確認した。In the literature and examples, only the negative part is shown for combinations of additives, but it has been confirmed that any combination has the same effect as long as it is within the specified range.
以上述よたように本発明によれば、バリスタとコンデン
サの両方の機能を同時に得ることができる。As described above, according to the present invention, it is possible to simultaneously obtain the functions of both a varistor and a capacitor.
第1図に示した従来のフィルタ回路では、第5図に示し
たノイズ入力Aに対して出力状況曲線Cとなり、十分に
ノイズ全除去していない。In the conventional filter circuit shown in FIG. 1, the output situation curve C is obtained for the noise input A shown in FIG. 5, and the noise is not completely removed.
第2図に示した従来のバリスタを含むノイズフィルタ回
路では、第5図に示したノイズ入力Aに対して出力状況
曲線Bとなり、ノイズは除去されるが部品点数が多く、
比較的大型でコスト高となる。In the conventional noise filter circuit including a varistor shown in FIG. 2, the output situation curve B is obtained for the noise input A shown in FIG. 5, and noise is removed, but the number of components is large.
It is relatively large and costly.
そこで、本発明による素子を使用して第4図に示すよう
な回路を作ったところ、第5図に示したノイズ入力AK
Nして出力状況曲線Bとなり、ノイズ金十分に除去する
ことができた。Therefore, when a circuit as shown in FIG. 4 was made using the element according to the present invention, the noise input AK shown in FIG.
N, the output situation curve B was obtained, and the noise could be sufficiently removed.
なお、第4図で7は本発明による素子、8はコイルであ
る。In FIG. 4, 7 is an element according to the present invention, and 8 is a coil.
発明の効果
以上述べたように本発明による磁器組成物を利用した素
子は、従来にないバリスタとコンデンサの複合機能を有
し、しかも従来のノイズフィルタ回路全簡略化し、小形
、高性能1低コスト化に寄与するものであり、各種電気
機器、電子機器のサージ吸収、ノイズ除去に利用可能で
あり、その実用上の価値は極めて大きい。Effects of the Invention As described above, the element using the ceramic composition of the present invention has an unprecedented combined function of a varistor and a capacitor, and furthermore, it completely simplifies the conventional noise filter circuit, and has a small size, high performance, and low cost. It can be used for surge absorption and noise removal in various electrical and electronic devices, and its practical value is extremely large.
第1図、第2図はそれぞれ従来のノイズフィルタ回路を
示す図、第3図は本発明による磁器組成物を用いた素子
の断面図、第4図は第3図の素子を用いたノイズフィル
タ回路を示す図、第5図は従来および本発明による素子
音用いたノイズフィルタ回路による入力ノイズと出力状
況を示す特性図である。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
!
第3図
第4図
第5図Figures 1 and 2 are diagrams showing conventional noise filter circuits, Figure 3 is a cross-sectional view of an element using the ceramic composition of the present invention, and Figure 4 is a noise filter using the element shown in Figure 3. FIG. 5, which is a circuit diagram, is a characteristic diagram showing the input noise and output status of noise filter circuits using element sounds according to the prior art and the present invention. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure! Figure 3 Figure 4 Figure 5
Claims (2)
〜0.950のSrTiO_3を93.000〜99.
995モル%と、Y_2O_3を0.001〜2.00
0モル%と、Co_2O_3を0.001〜2.000
モル%と、CuOを0.001〜1.000モル%と、
Ag_2Oを0.001〜1.000モル%と、MnO
_2を0.001〜1.000モル%含有してなる電圧
依存性非直線抵抗体磁器組成物。(1) The atomic ratio of Sr and Ti is Sr/Ti=1.050
~0.950 SrTiO_3 from 93.000 to 99.00.
995 mol% and Y_2O_3 from 0.001 to 2.00
0 mol% and 0.001 to 2.000 Co_2O_3
mol%, CuO 0.001 to 1.000 mol%,
0.001 to 1.000 mol% of Ag_2O and MnO
A voltage-dependent nonlinear resistor ceramic composition containing _2 in an amount of 0.001 to 1.000 mol%.
〜0.950のSrTiO_3を91.000〜99.
9949モル%と、Y_2O_3を0.001〜2.0
00モル%と、Co_2O_3を0.001〜2.00
0モル%と、CuOを0.001〜1.000モル%と
、Ag_2Oを0.001〜1.000モル%と、Mn
O_2を0.001〜1.000モル%と、B_2O_
3、NiO、MoO_3、BeO、Fe_2O_3、L
i_2O、Al_2O_3、Cr_2O_3、PbO、
CaO、TiO_2、P_2O_5、Sb_2O_3、
V_2O_5からなる群から選択された少なくとも一種
類以上の酸化物を0.001〜2.000モル%含有し
てなる電圧依存性非直線抵抗体磁器組成物。(2) The atomic ratio of Sr and Ti is Sr/Ti=1.050
~0.950 SrTiO_3 from 91.000 to 99.00.
9949 mol% and Y_2O_3 from 0.001 to 2.0
00 mol% and Co_2O_3 from 0.001 to 2.00
0 mol%, CuO 0.001 to 1.000 mol%, Ag_2O 0.001 to 1.000 mol%, Mn
0.001 to 1.000 mol% of O_2 and B_2O_
3, NiO, MoO_3, BeO, Fe_2O_3, L
i_2O, Al_2O_3, Cr_2O_3, PbO,
CaO, TiO_2, P_2O_5, Sb_2O_3,
A voltage-dependent nonlinear resistor ceramic composition containing 0.001 to 2.000 mol% of at least one oxide selected from the group consisting of V_2O_5.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59171991A JPS6153162A (en) | 1984-08-18 | 1984-08-18 | Voltage depending non-linear resistor ceramic composition |
EP85103135A EP0157276B1 (en) | 1984-03-30 | 1985-03-18 | Voltage-dependent non-linear resistance ceramic composition |
DE8585103135T DE3563610D1 (en) | 1984-03-30 | 1985-03-18 | VOLTAGE-DEPENDENT NON-LINEAR RESISTANCE CERAMIC COMPOSITION |
US06/930,995 US4781859A (en) | 1984-03-30 | 1986-11-14 | Voltage-dependent non-linear resistance ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59171991A JPS6153162A (en) | 1984-08-18 | 1984-08-18 | Voltage depending non-linear resistor ceramic composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6153162A true JPS6153162A (en) | 1986-03-17 |
Family
ID=15933498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59171991A Pending JPS6153162A (en) | 1984-03-30 | 1984-08-18 | Voltage depending non-linear resistor ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6153162A (en) |
-
1984
- 1984-08-18 JP JP59171991A patent/JPS6153162A/en active Pending
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