JPS6146061A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS6146061A JPS6146061A JP59167469A JP16746984A JPS6146061A JP S6146061 A JPS6146061 A JP S6146061A JP 59167469 A JP59167469 A JP 59167469A JP 16746984 A JP16746984 A JP 16746984A JP S6146061 A JPS6146061 A JP S6146061A
- Authority
- JP
- Japan
- Prior art keywords
- reading
- channel
- solid
- receiving element
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 18
- 229920005591 polysilicon Polymers 0.000 abstract description 18
- 210000003323 beak Anatomy 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、チャンネルストップ領域によって各受光素子
が分離されているインターライントランスファ構造の固
体撮像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a solid-state imaging device with an interline transfer structure in which each light receiving element is separated by a channel stop region.
第1図は従来例に係るインターライントランスファ構造
の固体撮像装置の概略上面図である。図のように、イン
ターライントランスファ構造の固体撮像装置はライン状
の受光素子と非照射領域のレジスタの平行列から成って
おシ、各受光素子は1のチャンネルストップによシミ気
的に分離されている。レジスタは例えば2層ポリシリコ
ン電極匝よシ形成され、2は1層目のポリシリコン電極
。FIG. 1 is a schematic top view of a conventional solid-state imaging device with an interline transfer structure. As shown in the figure, a solid-state imaging device with an interline transfer structure consists of a line-shaped light receiving element and a parallel array of resistors in a non-irradiated area, and each light receiving element is airtightly separated by one channel stop. ing. The resistor is formed, for example, by a two-layer polysilicon electrode, where 2 is the first layer of polysilicon electrode.
3は2層目のポリシリコン電極である。第2図は第1図
のI−I線上の断面図で4はPM半導体基′板、6はP
型半導体基板4の表面に形成されているn型領域の受光
素子、7は基板4の表面に形成され九nu領域のレジス
タである。入射した光は光量に応じて受光素子6におい
て電荷を発生蓄積し、蓄積された電荷はポリシリコン電
極2がオン状態であるときのみ、垂直シフトレジスタ7
に読み出される。ところで、このようなインターライン
トランスファ構造の固体撮像装置では、受光素子6から
のレジスタ7へ信号電荷を読み出す場合、1層目のポリ
シリコ/電極2を用いるよりも2層目のポリシリコン電
極3を用いたほうがシェーディングなどの特性が良いこ
とがわかってきた。これは2層目のポリシリコ/電極3
が゛1層目のボリシリコン電極2に比べて負荷容量が小
さくなるためと考えられる。3 is a second layer polysilicon electrode. Figure 2 is a cross-sectional view taken along the line I-I in Figure 1, where 4 is a PM semiconductor substrate, 6 is a P
A photodetector element 7 in an n-type region is formed on the surface of the semiconductor substrate 4, and 7 is a resistor in the 9nu region formed on the surface of the substrate 4. The incident light generates and accumulates charges in the light receiving element 6 according to the amount of light, and the accumulated charges are transferred to the vertical shift register 7 only when the polysilicon electrode 2 is in the on state.
is read out. By the way, in a solid-state imaging device with such an interline transfer structure, when reading signal charges from the light receiving element 6 to the register 7, the second layer polysilicon electrode 3 is used rather than the first layer polysilicon/electrode 2. It has been found that properties such as shading are better when used. This is the second layer of polysilico/electrode 3
This is thought to be because the load capacitance is smaller than that of the polysilicon electrode 2 in the first layer.
しかしこうした2層目のポリシリコン電極3による読み
出しを従来のような第1図に示したような構造でおこな
った場合、受光素子6から垂直レジスタ7への信号電荷
を読み出す読み出しチャンネル(第1図Aの部分)の幅
はチャンネルストップ領域lのバーズ・ピーク等の影響
で著しく狭くなる。かかる狭チャンネル効果により受光
索子6から垂直レジスタ7への信号電荷転送が完全にお
こなわれないため、残像などの画質劣化が生じる〇一方
、1層目のポリシリコン電極2のゲートポリシリ寸法を
小さくして読み出しチャンネルAを広げることは、2層
目ポリシリコン電極3の同層ショートを生じゃすくなI
)製造歩留シを著しく劣化させる原因となる。However, if readout using the second layer polysilicon electrode 3 is performed using the conventional structure shown in FIG. The width of part A) becomes significantly narrower due to the influence of the bird's peak of the channel stop region l. Due to such a narrow channel effect, signal charge transfer from the light-receiving probe 6 to the vertical register 7 is not completely performed, resulting in image quality deterioration such as afterimage. On the other hand, the gate polysilicon size of the first layer polysilicon electrode 2 is reduced. In order to widen the readout channel A, do not cause a same layer short circuit of the second layer polysilicon electrode 3.
) It causes a significant deterioration of manufacturing yield.
本発明は狭チャンネルを防止し、良質画像を可能とする
固体撮像装置の提供を目的とする。The present invention aims to provide a solid-state imaging device that prevents narrow channels and enables high-quality images.
本発明は複数の受光素子と電荷転送素子がそれぞれ対向
して設けられ、前記各受光素子は互いにチャンネルスト
ップ領域により電気的に分離されている固体撮像装置に
おいて、前記チャンネルストップ領域が受光素子から電
荷転送素子に信号電荷を読み出す読み出しチャンネルに
隣接する部分で狭くなっていることを特徴とする。The present invention provides a solid-state imaging device in which a plurality of light receiving elements and a plurality of charge transfer elements are provided facing each other, and each of the light receiving elements is electrically separated from each other by a channel stop region. It is characterized by a narrow portion adjacent to the read channel that reads signal charges to the transfer element.
以下図面を参照して本発明の詳細な説明する。 The present invention will be described in detail below with reference to the drawings.
第3図は本発明の実施例に係る固体撮像装置の概路上面
図でおる。図において第1図と同じ番号は同じものを示
している。従来例に係る固定撮像装置(第1図参照)と
比較して本発明の特徴は、受光素子からレジスタへ信号
読み出しをおこなう読み出しチャンネルAに隣接する部
分において、チャンネルストップ領域1が狭くなってい
ることにある。このことによシ読み出しチャンネルAの
領域は、バーズビーク等の影響を受けないですむ。FIG. 3 is a schematic top view of a solid-state imaging device according to an embodiment of the present invention. In the figures, the same numbers as in FIG. 1 indicate the same things. The feature of the present invention compared to the conventional fixed imaging device (see FIG. 1) is that the channel stop region 1 is narrower in the portion adjacent to the readout channel A that reads signals from the light receiving element to the register. There is a particular thing. As a result, the area of the read channel A is not affected by bird's beak or the like.
なお第3図に示すようにチャンネル幅が広くなるように
ポリシリコン2の形状を変えている。これによシ狭チャ
ンネルによる悪影響をいっそう少なくできる。Note that, as shown in FIG. 3, the shape of the polysilicon 2 is changed so that the channel width becomes wider. This further reduces the negative effects of narrow channels.
また実施例では2層ポリシリコン電極による電荷読み出
しによる場合を説明したが、1層ポリシリコン電極の場
合にも本発明が適用できることは明らかである。Further, in the embodiment, a case where charge reading is performed using a two-layer polysilicon electrode has been described, but it is clear that the present invention can also be applied to a case where a single-layer polysilicon electrode is used.
以上説明したように本発明によれば、2層目のポリシリ
コン電極で受光素子からレジスタへの信号を読み出す読
み出しチャンネル領域の幅を効果的に確保することがで
きる。As described above, according to the present invention, the width of the readout channel region for reading out signals from the light receiving element to the register can be effectively secured using the second layer polysilicon electrode.
第1図は従来例に係るインターライントランスファ構造
の固体撮像装置の一部を示す概路上面図。
第2図は第1図のI−I線の断面図、第3図は本発明の
実施例に係る固体撮像装置の概路上面図である。
1・・・チャンネルストップ領域
2・・・lNJ目のポリシリコン電極
3・・・2Rri目のポリシリコン′畦極4・・・半導
体基板
5・・・絶縁膜
6・・・受光素子
7・・・レジスタ
A・・・チャンネル領域FIG. 1 is a schematic top view showing a part of a conventional solid-state imaging device with an interline transfer structure. FIG. 2 is a sectional view taken along line II in FIG. 1, and FIG. 3 is a schematic top view of a solid-state imaging device according to an embodiment of the present invention. 1... Channel stop region 2... 1NJth polysilicon electrode 3... 2Rrith polysilicon' ridge electrode 4... Semiconductor substrate 5... Insulating film 6... Light receiving element 7...・Register A...Channel area
Claims (1)
られ、前記各受光素子は互いにチャンネルストップ領域
により電気的に分離されている固体撮像装置において、
前記チヤンネルストツプ領域が受光素子から電荷転送素
子に信号電荷を読み出す読み出しチャンネルに隣接する
部分で狭くなつていることを特徴とする固体撮像装置。A solid-state imaging device in which a plurality of light receiving elements and charge transfer elements are provided facing each other, and each of the light receiving elements is electrically separated from each other by a channel stop region,
A solid-state imaging device characterized in that the channel stop region is narrowed at a portion adjacent to a readout channel for reading signal charges from a light receiving element to a charge transfer element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59167469A JPS6146061A (en) | 1984-08-10 | 1984-08-10 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59167469A JPS6146061A (en) | 1984-08-10 | 1984-08-10 | Solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6146061A true JPS6146061A (en) | 1986-03-06 |
Family
ID=15850249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59167469A Pending JPS6146061A (en) | 1984-08-10 | 1984-08-10 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6146061A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164460A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electronics Corp | Solid-state image sensor |
-
1984
- 1984-08-10 JP JP59167469A patent/JPS6146061A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164460A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electronics Corp | Solid-state image sensor |
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