JPS6137788B2 - - Google Patents
Info
- Publication number
- JPS6137788B2 JPS6137788B2 JP3783081A JP3783081A JPS6137788B2 JP S6137788 B2 JPS6137788 B2 JP S6137788B2 JP 3783081 A JP3783081 A JP 3783081A JP 3783081 A JP3783081 A JP 3783081A JP S6137788 B2 JPS6137788 B2 JP S6137788B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- semiconductor device
- weight
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003822 epoxy resin Substances 0.000 claims description 62
- 229920000647 polyepoxide Polymers 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 33
- 229920003986 novolac Polymers 0.000 claims description 20
- -1 phosphine compound Chemical class 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 14
- 239000013522 chelant Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 10
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 18
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 239000012778 molding material Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000003003 phosphines Chemical class 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- XGCDBGRZEKYHNV-UHFFFAOYSA-N 1,1-bis(diphenylphosphino)methane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CP(C=1C=CC=CC=1)C1=CC=CC=C1 XGCDBGRZEKYHNV-UHFFFAOYSA-N 0.000 description 2
- QFMZQPDHXULLKC-UHFFFAOYSA-N 1,2-bis(diphenylphosphino)ethane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCP(C=1C=CC=CC=1)C1=CC=CC=C1 QFMZQPDHXULLKC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000010680 novolac-type phenolic resin Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- PVWYTIFUYYJMQO-UHFFFAOYSA-N butyl(phenyl)phosphane Chemical compound CCCCPC1=CC=CC=C1 PVWYTIFUYYJMQO-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- GVPMWPVWXBCNPY-UHFFFAOYSA-N copper;2-hydroxybenzaldehyde Chemical compound [Cu].OC1=CC=CC=C1C=O.OC1=CC=CC=C1C=O GVPMWPVWXBCNPY-UHFFFAOYSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940093858 ethyl acetoacetate Drugs 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical compound CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000005480 straight-chain fatty acid group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Description
本発明はエポキシ樹脂系組成物の硬化物によつ
て封止された高信頼性の樹脂封止型半導体装置に
関する。
エポキシ樹脂は電気特性、機械特性、耐湿性な
どが優れているので信頼性の高い電気絶縁材料と
して半導体装置、電子部品、電気部品の封止や含
浸などに広く用いられている。特に半導体装置、
たとえば集積回路、大規模集積回路、トランジス
タ、ダイオードなどは極く一部を除きほとんどが
低圧成形用のエポキシ樹脂系組成物を用いて封止
されている。半導体封止用エポキシ樹脂系組成物
としては耐湿性や信頼性、成形性などの点におい
て最も優れている。エポキシ樹脂、ノボラツク型
フエノール樹脂硬化剤、イミダゾール硬化促進剤
から成るエポキシ樹脂系組成物が用いられてい
る。
このエポキシ樹脂系組成物による封止は、金属
やセラミツクスを用いたハーメチツクシール方式
に較べ
(1) 低価格であること
(2) 大量生産が可能であること
などの利点がある反面、信頼性に関し次のような
欠点があつた。
(1) 樹脂封止型半導体装置に要求される信頼性の
レベルの高さに較べ耐湿性が劣ること。
(2) 樹脂封止型半導体装置に要求される信頼性の
レベルの高さに較べ高温時の電気特性が劣るこ
と。
(3) 潜在硬化性が充分でないため、常温貯蔵性が
不十分であること。
上記耐湿性について説明すると、樹脂封止型半
導体装置は高温高湿雰囲気下で使用または保存す
ることがあるので、そのような条件においても信
頼性を保証しなければならない。耐湿性の品質保
証のための評価試験としては、85℃または120℃
の飽和水蒸気中に暴露する加速評価法（プレツシ
ヤークツカーテスト、PCT）が行なわれてお
り、最近では電圧を印加して更に加速性を高めた
り、バイアス印加型の評価試験（バイアス
PCT）も実施されている。
しかし封止したエポキシ樹脂系組成物の硬化物
は吸湿性、透湿性があるため、このような高温高
湿状態下では外部から水分が封止樹脂硬化物層を
通つて内部に浸透し、または封止樹脂とリードフ
レームとの界面を通つて内部に入り、半導体素子
の表面にまで到達する。この水分と封止樹脂中に
存在している不純物イオンなどの作用の結果とし
て、樹脂封止型半導体装置は絶縁性の低下、リー
ク電流の増加、アルミニウム電極、配線などの腐
食を主体とした不良を発生する。またバイアス電
圧を印加した場合にはその電気化学作用によつて
アルミニウム電極、配線の腐食による不良が特に
著しく多発する。
従来の樹脂封止型半導体装置は上記耐湿性に関
し充分に満足できるものではなく、耐湿性の向上
が求められていた。
次に高温時の電気特性について説明すると、樹
脂封止型半導体装置は高温条件下で使用すること
があるので、そのような条件においても信頼性を
保証しなければならない。そのための評価試験と
しては120℃〜150℃でバイアス電圧を印加して信
頼性を評価する加速試験が一般的である。
このような試験において表面が鋭敏なMOS構
造をもつ素子や、逆バイアスが印加されたPN接
合をもつ素子に特に著しく多発する不良として、
チヤンネリングによるリーク電流の増加する現象
があることはよく知られている。この現象は電圧
が印加された素子の表面に接している樹脂層に電
界が作用することによつて発生すると考えられて
いる。
従来の樹脂封止型半導体装置は上記高温時の電
気特性に関し充分に満足できるものではなく、改
良が求められていた。
次に潜在硬化性については、従来の封止樹脂は
室温で保管すると硬化反応が進行し、最終的には
半導体装置をモールドすることができなくなつて
しまうばかりでなく、モールドが可能な期間内に
おいても封止後の電気特性が急速に劣化するた
め、信頼性上問題なく使用できる期間は非常に短
いという欠点があつた。従つてこのような樹脂を
用いて封止された半導体装置は、信頼性の観点か
ら安定性に乏しく、改良が求められていた。
本発明の目的はこのような従来の樹脂封止型半
導体装置の難点を改良し、優れた耐湿性、高温電
気特性、潜在硬化性を有するエポキシ樹脂系組成
物によつて封止された信頼性の高い樹脂封止型半
導体装置を提供することにある。
上記目的を達成すべく、本発明者らが鋭意研究
を重ねた結果、硬化促進剤などが上記難点を形成
する主要因であることを解明し、更に次に示すエ
ポキシ樹脂系組成物が、半導体封止用樹脂として
優れた耐湿性と高温電気特性と潜在硬化性を有す
ることを見出し、これを用いることによつて従来
のものに較べ、耐湿性や高温電気特性などの信頼
性に優れた樹脂封止型半導体装置が得られること
を見出した。
すなわち本発明は
(a) エポキシ当量170〜300のノボラツク型エポキ
シ樹脂、
(b) ノボラツク型フエノール樹脂硬化剤、
(c) 有機ホスフイン化合物（硬化促進剤）、及び
(d) 金属キレート化合物、
を必須成分とし、更に要すれば無機質充てん剤を
含んでもよく、エポキシ樹脂100重量部に対し前
記有機ホスフイン化合物が0.01〜20重量部の範囲
内にあり、かつ有機ホスフイン化合物100重量部
に対し金属キレート化合物が１〜100重量部の範
囲内にあるエポキシ樹脂系組成物の硬化物によつ
て半導体装置が封止されてなることを特徴とする
樹脂封止型半導体装置である。
本発明において用いられるエポキシ樹脂は、電
気的、機械的に良特性をもたらすエポキシ当量
170〜300のノボラツク型エポキシ樹脂であつて、
たとえばフエノールノボラツク型エポキシ樹脂、
クレゾールノボラツク型エポキシ樹脂、ハロゲン
化フエノールノボラツク型エポキシ樹脂などであ
る。これらエポキシ樹脂は１種もしくは２種以上
の混合系で用いてもよい。なお上記以外のエポキ
シ樹脂、たとえばビスフエノールＡ型エポキシ樹
脂など一般のグリシジルエーテル型エポキシ樹
脂、グリシジルエステル型エポキシ樹脂、グリシ
ジルアミン型エポキシ樹脂、線状脂肪族エポキシ
樹脂、脂環式エポキシ樹脂、複素環型エポキシ樹
脂、ハロゲン化エポキシ樹脂などを、上記エポキ
シ当量170〜300のノボラツク型エポキシ樹脂に併
用して使用することができるが、配合量はノボラ
ツク型エポキシ樹脂に対し50重量％以下が好まし
い。またこれらいずれのエポキシ樹脂も塩素イオ
ンの含有量が10ppm以下、加水分解性塩素の含
有量が0.1重量％以下のものが望ましい。
本発明において用いられるノボラツク型フエノ
ール樹脂硬化剤としてはフエノールノボラツク樹
脂、クレゾールノボラツク樹脂、tert−ブチルフ
エノールノボラツク樹脂、ノニルフエノールノボ
ラツク樹脂などが挙げられる。これらのフエノー
ル樹脂の軟化点は60℃〜100℃の範囲内にあるこ
とが好ましく、更に常温における水に可溶性のフ
エノール樹脂成分が３％以下であることが好まし
い。しかしてこれらの硬化剤は１種もしくは２種
以上の混合系で使用することができる。
エポキシ樹脂と硬化剤の配合比については、ノ
ボラツク型フエノール樹脂のフエノール性水酸基
の数／エポキシ樹脂のエポキシ基の数の比が0.5
〜1.5、より好ましくは0.7〜1.2の範囲内にあるよ
うに配合することが好ましい。その理由は0.5未
満あるいは1.5を超えると反応が充分におこり難
く、硬化物の特性が劣化しやすいためである。
本発明において硬化促進剤として特に用いられ
る有機ホスフイン化合物としては、化学式
〔〕：
におけるR1〜R3がすべて有機基である第３ホス
フイン化合物；R3のみ水素でR1，R2が有機基で
ある第２ホスフイン化合物；R2，R3がともに水
素でR1が有機基である第１ホスフイン化合物が
ある。有機基としては、アルキル基、シクロアル
キル基、アリール基、アラルキル基、アルキルア
リール基などがあげられる。かかる式〔〕の化
合物の具体例としては、トリフエニルホスフイ
ン、トリブチルホスフイン、トリシクロヘキシル
ホスフイン、メチルジフエニルホスフイン、ブチ
ルフエニルホスフイン、ジフエニルホスフイン、
フエニルホスフイン、オクチルホスフインなどで
ある。またR1が有機ホスフイノ基を有する有機
基であつてもよい。たとえば１，２−ビス（ジフ
エニルホスフイノ）エタン、ビス（ジフエニルホ
スフイノ）メタンなどのビス有機ホスフイン化合
物である。以上の中でも有機第３ホスフイン化合
物が好ましく、特にトリフエニルホスフイン、
１，２−ビス（ジフエニルホスフイノ）エタン、
ビス（ジフエニルホスフイノ）メタンなどが最も
好ましい。またこれらの有機ホスフイン化合物は
１種もしくは２種以上の混合系で用いてもよい。
しかして有機ホスフイン化合物は全エポキシ樹脂
100重量部に対し、0.01〜200重量部、より好まし
くは0.01〜８重量部の範囲内にあるように組成し
なければならない。その理由は0.01重量％未満で
は添加の効果が認められず、20重量％を超えると
逆に劣化するためである。
本発明において、金属キレート化合物を用いる
ことにより、金属キレート化合物と有機ホスフイ
ン化合物の相互作用によつて、有機ホスフイン化
合物を単独で用いた場合に比べ、樹脂封止型半導
体装置の耐湿性及び高温電気特性を著しく改善す
ることができる。
本発明において用いられる金属キレート化合物
を具体的に例示する。キレート化合物を形成する
中心金属としては、例えばアルミニウム、バリウ
ム、カルシウム、カドミウム、コバルト、クロ
ム、銅、鉄、カリウム、マグネシウム、マンガ
ン、ナトリウム、ニツケル、鉛、パラジウム、ロ
ジウム、チタン、バナジウム、亜鉛、ジルコニウ
ムなどが挙げられる。配位子としてはアセチルア
セトン、エチルアセトアセテート、グリシン、サ
リチルアルデヒド、８−オキシキノリン、エチレ
ンジアミン、トリエチレンテトラミン、エチレン
ジアミン四酢酸、サリチル酸、シユウ酸、ジメチ
ルグリオキシム、ジピリジル、フエナントロリン
などが挙げられる。
この金属キレート化合物は有機ホスフイン化合
物100重量部に対し１〜100重量部の範囲内にある
ように組成しなければならず、好ましくは３〜50
重量部の範囲である。その理由は１重量部未満で
は金属キレート化合物の効果が認められず、100
重量部を超えると逆に特性が劣化するためであ
る。
以上、本発明に用いられる樹脂組成物の必須成
分について説明したが、更に無機質充填剤を配合
してもよい。無機質充填剤を含まない場合には、
注型またはコーテイングなどの方法により、集積
回路、大規模集積回路、トランジスタ、ダイオー
ドなどの半導体装置の封止に用いられる。また、
無機質充てん剤を添加配合することにより作業性
の改善されたエポキシ樹脂系組成物を得ることが
できる。特に成形材料として用いる場合には熱機
械特性の改善に効果がある。
無機質充てん剤の具体例としては石英ガラス粉
末、結晶性シリカ粉末、ガラス繊維、タルク、ア
ルミナ粉、ケイ酸カルシウム粉、炭酸カルシウム
粉、硫酸バリウム粉、マグネシア粉などである
が、これらの中で石英ガラス粉や結晶性シリカ粉
が最も好ましい。しかしてこれらの無機質充てん
剤の組成比は、用途や樹脂分（エポキシ樹脂およ
びエポキシ樹脂の硬化剤）や無機質充てん剤の種
類によつても異るが、たとえばトランスフア成形
に用いる場合には樹脂分100重量部当り150〜400
重量部程度でよい。またトランスフア成形に用い
る場合などは無機質充てん剤の粒度分布を適当に
選択することにより、特性の良い成形材料をつく
ることができる。
無機質充填剤を配合した場合には、集積回路、
大規模集積回路、トランジスタ、ダイオードなど
の半導体装置のトランスフア成形法による封止に
適する。
更に本発明に係るエポキシ樹脂系組成物には必
要に応じて、例えば天然ワツクス類、合成ワツク
ス類、直鎖脂肪酸に金属塩、酸アミド類、エステ
ル類もしくはパラフイン類などの離型剤、塩素化
パラフイン、ブロムトルエン、ヘキサブロムベン
ゼン、三酸化アンチモンなどの離燃剤、カーボン
ブラツクなどの着色剤、シランカツプリング剤な
どを適宜添加配合してもよい。
本発明に係るエポキシ樹脂系組成物を成形材料
として調製する場合の一般的な方法としては、所
定の組成比に選んだ原料組成分を例えばミキサー
によつて充分混合後、さらに熱ロールによる溶融
混合処理、またはニーダーなどによる混合処理を
加えることにより容易にエポキシ樹脂系成形材料
を得ることができる。
本発明の樹脂封止型半導体装置は上記エポキシ
樹脂系組成物を用いて半導体装置を封止すること
により容易に製造することができる。封止の最も
一般的な方法としては低圧トランスフア成形法が
あるが、インジエクシヨン成形、圧縮成形、注型
などによる封止も可能である。特殊な封止法とし
ては、溶剤型あるいは非溶剤型の組成物を用いて
半導体表面を被覆する封止法や、いわゆるジヤン
クシヨンコーテイングとしての局部的な封止の用
途にも用いることができる。エポキシ樹脂系組成
物は封止の際に加熱して硬化させ、最終的にはこ
の組成物の硬化物によつて封止された樹脂封止型
半導体装置を得ることができる。硬化に際しては
150℃以上に加熱することが望ましい。
本発明でいう半導体装置とは、例えば集積回
路、大規模集積回路、トランジスタ、サイリス
タ、ダイオードなどであつて特に限定されるもの
ではない。
本発明によつて優れた特性、信頼性を有する樹
脂封止型半導体装置を提供することができる。以
下その点について述べると、
第１に本発明の樹脂封止型半導体装置は耐湿性
に優れており、高温高湿下で使用した場合に従来
のものに較べ半導体装置のアルミニウム配線、電
極の腐食による断線や、水分によるリーク電流の
不良などを著しく低減することができ、しかも長
期間にわたつて信頼性を保証することができる。
第２に本発明の樹脂封止型半導体装置は高温電
気特性に優れており、高温時に使用した場合、ま
たは発熱等により局部的に高温状態になつた場合
に、リーク電流の発生しやすいMOS構造または
PN接合を有する半導体装置においても、従来の
ものに較べリーク電流不良や電気絶縁不良を著し
く低減することができ、長期間にわたつて高い信
頼性を維持することができる。
第３に本発明の装置に用いた封止用樹脂組成物
は潜在硬化性、常温保存性に優れており、長期の
保存によつても封止後の特性が良好であり、従つ
て封止された本発明の樹脂封止型半導体装置の信
頼性は高い。
次に本発明の実施例を説明する。
実施例 １〜３
エポキシ当量200のフエノールノボラツク型エ
ポキシ樹脂（エポキシ樹脂Ａ）、エポキシ当量400
のビスフエノールＡ型エポキシ樹脂（エポキシ樹
脂Ｂ）、分子量700のフエノールノボラツク樹脂硬
化剤、無水メチルナジツク酸、トリフエニルホス
フイン、トリス（アセチルアセトナト）アルミニ
ウム、ビス（ジメチルグリオキシマト）ニツケ
ル、エチレンジアミンテトラアセタトコバルト、
ベンジルジメチルアミンを表−１に示す組成比
（重量部）に選び、比較例を含め８種のエポキシ
樹脂系組成物を調製した。
上記エポキシ樹脂系組成物を用いてMOS型集
積回路装置を注型し、170℃で８時間の硬化を行
い、樹脂封止型半導体装置を得た。この樹脂封止
型半導体装置各50個について
(1) 120℃、２気圧水蒸気中に放置して不良発生
を調べる耐湿試験（PCT…プレツシヤクツカ
テスト）を行つた結果を表−２に示した。
(2) 120℃、２気圧水蒸気中で10V印加してアル
ミニウム配線の腐食による断線（不良発生）を
調べる耐湿試験（バイアスPCT）を行つた結
果を表−３に示した。
(3) 150℃のオーブン中でフイールド領域のソー
スとドレイン間に電圧10Vを印加し、電気特性
の劣化による不良発生を調べた結果を表−４に
示した。
The present invention relates to a highly reliable resin-encapsulated semiconductor device sealed with a cured product of an epoxy resin composition. Epoxy resin has excellent electrical properties, mechanical properties, moisture resistance, etc., and is therefore widely used as a highly reliable electrical insulating material for sealing and impregnating semiconductor devices, electronic components, and electrical components. Especially semiconductor devices,
For example, most integrated circuits, large-scale integrated circuits, transistors, diodes, etc., with very few exceptions, are sealed using epoxy resin compositions for low-pressure molding. It is the most excellent epoxy resin composition for semiconductor encapsulation in terms of moisture resistance, reliability, moldability, etc. An epoxy resin composition comprising an epoxy resin, a novolac type phenolic resin curing agent, and an imidazole curing accelerator is used. Sealing using this epoxy resin composition has the advantages of (1) lower cost than hermetic sealing methods using metals or ceramics, and (2) mass production. Regarding gender, there were the following disadvantages: (1) Moisture resistance is inferior to the high level of reliability required for resin-sealed semiconductor devices. (2) Compared to the high level of reliability required for resin-sealed semiconductor devices, electrical characteristics at high temperatures are inferior. (3) Room-temperature storage is insufficient due to insufficient latent curing properties. Regarding the moisture resistance, resin-sealed semiconductor devices are sometimes used or stored in high-temperature, high-humidity environments, so reliability must be guaranteed even under such conditions. Evaluation tests for moisture resistance quality assurance include 85°C or 120°C.
An accelerated evaluation method (Prescher-Kutsker test, PCT) has been conducted in which exposure to saturated water vapor is applied.Recently, acceleration has been further increased by applying a voltage,
PCT) is also being implemented. However, the cured product of the encapsulated epoxy resin composition is hygroscopic and moisture permeable, so under such high temperature and high humidity conditions, moisture from the outside can penetrate into the interior through the cured epoxy resin layer, or It enters the interior through the interface between the sealing resin and the lead frame and reaches the surface of the semiconductor element. As a result of the action of this moisture and impurity ions existing in the sealing resin, resin-sealed semiconductor devices exhibit defects mainly due to decreased insulation, increased leakage current, and corrosion of aluminum electrodes, wiring, etc. occurs. Further, when a bias voltage is applied, defects due to corrosion of aluminum electrodes and wiring occur particularly frequently due to the electrochemical action. Conventional resin-sealed semiconductor devices are not fully satisfied with the above-mentioned moisture resistance, and there has been a demand for improved moisture resistance. Next, electric characteristics at high temperatures will be explained. Since resin-sealed semiconductor devices are sometimes used under high temperature conditions, reliability must be guaranteed even under such conditions. A typical evaluation test for this purpose is an accelerated test in which reliability is evaluated by applying a bias voltage at 120°C to 150°C. In such tests, defects that occur particularly frequently in devices with MOS structures with sensitive surfaces or devices with PN junctions to which reverse bias is applied are as follows:
It is well known that there is a phenomenon in which leakage current increases due to channeling. This phenomenon is thought to occur when an electric field acts on the resin layer that is in contact with the surface of the element to which a voltage is applied. Conventional resin-sealed semiconductor devices are not fully satisfactory with respect to the above-mentioned electrical characteristics at high temperatures, and improvements have been sought. Next, regarding latent curing, conventional sealing resins undergo a curing reaction when stored at room temperature, and not only do they eventually become unable to be molded into semiconductor devices, but also within the moldable period. However, since the electrical characteristics deteriorate rapidly after sealing, the period during which it can be used without any reliability problems is extremely short. Therefore, semiconductor devices sealed using such resins lack stability from the viewpoint of reliability, and improvements have been sought. The purpose of the present invention is to improve the drawbacks of conventional resin-sealed semiconductor devices, and to improve reliability by encapsulating them with an epoxy resin composition that has excellent moisture resistance, high-temperature electrical properties, and latent curability. The object of the present invention is to provide a resin-sealed semiconductor device with high performance. In order to achieve the above object, the present inventors have conducted intensive research and have found that the curing accelerator is the main cause of the above-mentioned difficulties. We discovered that it has excellent moisture resistance, high-temperature electrical properties, and latent curing properties as a sealing resin, and by using this resin, we have created a resin that has superior moisture resistance, high-temperature electrical properties, and other reliability compared to conventional resins. It has been found that a sealed semiconductor device can be obtained. That is, the present invention requires (a) a novolac type epoxy resin having an epoxy equivalent of 170 to 300, (b) a novolac type phenolic resin curing agent, (c) an organic phosphine compound (curing accelerator), and (d) a metal chelate compound. The organic phosphine compound is in the range of 0.01 to 20 parts by weight per 100 parts by weight of the epoxy resin, and the metal chelate compound is contained in the organic phosphine compound in an amount of 0.01 to 20 parts by weight per 100 parts by weight of the epoxy resin. The present invention is a resin-sealed semiconductor device characterized in that the semiconductor device is sealed with a cured product of an epoxy resin composition having a content of 1 to 100 parts by weight. The epoxy resin used in the present invention has an epoxy equivalent that provides good electrical and mechanical properties.
170~300 novolac type epoxy resin,
For example, phenol novolac type epoxy resin,
These include cresol novolak type epoxy resin, halogenated phenol novolak type epoxy resin, and the like. These epoxy resins may be used alone or in a mixed system of two or more. Epoxy resins other than those mentioned above, such as general glycidyl ether type epoxy resins such as bisphenol A type epoxy resins, glycidyl ester type epoxy resins, glycidylamine type epoxy resins, linear aliphatic epoxy resins, alicyclic epoxy resins, and heterocyclic Type epoxy resins, halogenated epoxy resins, etc. can be used in combination with the novolak type epoxy resin having an epoxy equivalent of 170 to 300, but the blending amount is preferably 50% by weight or less based on the novolak type epoxy resin. It is also desirable that any of these epoxy resins have a chlorine ion content of 10 ppm or less and a hydrolyzable chlorine content of 0.1% by weight or less. Examples of the novolak type phenolic resin curing agent used in the present invention include phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. The softening point of these phenolic resins is preferably within the range of 60°C to 100°C, and it is further preferable that the phenolic resin component soluble in water at room temperature is 3% or less. These curing agents can be used alone or in a mixed system of two or more. Regarding the compounding ratio of the epoxy resin and the curing agent, the ratio of the number of phenolic hydroxyl groups in the novolak type phenolic resin/the number of epoxy groups in the epoxy resin is 0.5.
It is preferable to mix it so that it is in the range of 1.5 to 1.5, more preferably 0.7 to 1.2. The reason for this is that when it is less than 0.5 or more than 1.5, it is difficult for the reaction to occur sufficiently and the properties of the cured product tend to deteriorate. The organic phosphine compound particularly used as a curing accelerator in the present invention has the chemical formula []: Tertiary phosphine compound in which R 1 to R 3 are all organic groups; Secondary phosphine compound in which only R 3 is hydrogen and R 1 and R 2 are organic groups; R 2 and R 3 are both hydrogen and R 1 is organic There are primary phosphine compounds that are radicals. Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkylaryl group. Specific examples of the compound of the formula [] include triphenylphosphine, tributylphosphine, tricyclohexylphosphine, methyldiphenylphosphine, butylphenylphosphine, diphenylphosphine,
These include phenylphosphine and octylphosphine. Further, R 1 may be an organic group having an organic phosphino group. For example, bisorganophosphine compounds such as 1,2-bis(diphenylphosphino)ethane and bis(diphenylphosphino)methane are used. Among the above, organic tertiary phosphine compounds are preferred, particularly triphenylphosphine,
1,2-bis(diphenylphosphino)ethane,
Most preferred are bis(diphenylphosphino)methane and the like. Further, these organic phosphine compounds may be used alone or in a mixed system of two or more.
However, organic phosphine compounds are all epoxy resins.
The composition should be in the range of 0.01 to 200 parts by weight, more preferably 0.01 to 8 parts by weight, per 100 parts by weight. The reason for this is that if it is less than 0.01% by weight, no effect is observed, and if it exceeds 20% by weight, it will deteriorate. In the present invention, by using a metal chelate compound, due to the interaction between the metal chelate compound and the organic phosphine compound, the moisture resistance and high temperature electrical Characteristics can be significantly improved. Specific examples of the metal chelate compounds used in the present invention are given below. Examples of central metals forming chelate compounds include aluminum, barium, calcium, cadmium, cobalt, chromium, copper, iron, potassium, magnesium, manganese, sodium, nickel, lead, palladium, rhodium, titanium, vanadium, zinc, and zirconium. Examples include. Examples of the ligand include acetylacetone, ethylacetoacetate, glycine, salicylaldehyde, 8-oxyquinoline, ethylenediamine, triethylenetetramine, ethylenediaminetetraacetic acid, salicylic acid, oxalic acid, dimethylglyoxime, dipyridyl, and phenanthroline. The metal chelate compound must be composed in a range of 1 to 100 parts by weight, preferably 3 to 50 parts by weight, per 100 parts by weight of the organic phosphine compound.
Parts by weight range. The reason for this is that the effect of the metal chelate compound is not recognized when it is less than 1 part by weight;
This is because if the amount exceeds 1 part by weight, the properties will deteriorate. The essential components of the resin composition used in the present invention have been described above, but an inorganic filler may also be added. If it does not contain inorganic fillers,
It is used to encapsulate semiconductor devices such as integrated circuits, large-scale integrated circuits, transistors, and diodes by methods such as casting or coating. Also,
By adding and blending an inorganic filler, an epoxy resin composition with improved workability can be obtained. Particularly when used as a molding material, it is effective in improving thermomechanical properties. Specific examples of inorganic fillers include quartz glass powder, crystalline silica powder, glass fiber, talc, alumina powder, calcium silicate powder, calcium carbonate powder, barium sulfate powder, and magnesia powder. Most preferred are glass powder and crystalline silica powder. However, the composition ratio of these inorganic fillers varies depending on the purpose, resin content (epoxy resin and epoxy resin curing agent), and type of inorganic filler. For example, when used in transfer molding, resin 150-400 per 100 parts by weight
Only parts by weight are sufficient. Furthermore, when used in transfer molding, a molding material with good properties can be produced by appropriately selecting the particle size distribution of the inorganic filler. When an inorganic filler is added, integrated circuits,
Suitable for sealing large-scale integrated circuits, transistors, diodes, and other semiconductor devices using the transfer molding method. Furthermore, the epoxy resin composition according to the present invention may contain, if necessary, a release agent such as natural waxes, synthetic waxes, straight chain fatty acids, metal salts, acid amides, esters or paraffins, and chlorinated waxes. Flame release agents such as paraffin, bromotoluene, hexabromobenzene, and antimony trioxide, colorants such as carbon black, silane coupling agents, and the like may be appropriately added and blended. A general method for preparing the epoxy resin composition according to the present invention as a molding material is to thoroughly mix the raw material components selected at a predetermined composition ratio using, for example, a mixer, and then melt-mix using hot rolls. An epoxy resin molding material can be easily obtained by processing or mixing using a kneader or the like. The resin-sealed semiconductor device of the present invention can be easily manufactured by sealing the semiconductor device using the above-mentioned epoxy resin composition. The most common method for sealing is low-pressure transfer molding, but sealing by injection molding, compression molding, casting, etc. is also possible. As a special sealing method, a sealing method in which a semiconductor surface is coated using a solvent-based or non-solvent-type composition, and a local sealing application such as so-called juncture coating can also be used. The epoxy resin composition is heated and cured during sealing, and finally a resin-sealed semiconductor device can be obtained which is sealed with a cured product of this composition. When curing
It is desirable to heat it to 150℃ or higher. The semiconductor device in the present invention is, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, etc., and is not particularly limited. According to the present invention, a resin-sealed semiconductor device having excellent characteristics and reliability can be provided. To discuss these points below, firstly, the resin-sealed semiconductor device of the present invention has excellent moisture resistance, and when used under high temperature and high humidity, the aluminum wiring and electrodes of the semiconductor device corrode more than conventional devices. It is possible to significantly reduce the occurrence of wire breakage due to oxidation, leakage current defects due to moisture, etc., and to ensure reliability over a long period of time. Second, the resin-sealed semiconductor device of the present invention has excellent high-temperature electrical characteristics, and has a MOS structure that is prone to leakage current when used at high temperatures or when a localized high temperature state occurs due to heat generation, etc. or
Even in a semiconductor device having a PN junction, leakage current defects and electrical insulation defects can be significantly reduced compared to conventional devices, and high reliability can be maintained over a long period of time. Thirdly, the sealing resin composition used in the device of the present invention has excellent latent curing properties and room temperature storage stability, and has good properties after sealing even after long-term storage. The reliability of the resin-sealed semiconductor device of the present invention is high. Next, embodiments of the present invention will be described. Examples 1 to 3 Phenol novolac type epoxy resin with epoxy equivalent weight 200 (epoxy resin A), epoxy equivalent weight 400
Bisphenol A type epoxy resin (epoxy resin B), phenol novolak resin curing agent with a molecular weight of 700, methylnadic anhydride, triphenylphosphine, tris(acetylacetonato)aluminum, bis(dimethylglyoxymato)nickel, ethylenediamine cobalt tetraacetate,
Eight types of epoxy resin compositions including a comparative example were prepared by selecting benzyldimethylamine at the composition ratio (parts by weight) shown in Table 1. A MOS integrated circuit device was cast using the above epoxy resin composition and cured at 170° C. for 8 hours to obtain a resin-sealed semiconductor device. Table 2 shows the results of a moisture resistance test (PCT...pressure test) performed on each of these 50 resin-sealed semiconductor devices (1) by leaving them in water vapor at 120°C and 2 atm to check for defects. Ta. (2) Table 3 shows the results of a moisture resistance test (bias PCT) in which 10V was applied in 2-atm steam at 120°C to check for disconnection (defect occurrence) due to corrosion of aluminum wiring. (3) A voltage of 10V was applied between the source and drain of the field region in an oven at 150°C, and the occurrence of defects due to deterioration of electrical characteristics was investigated. The results are shown in Table 4.
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】
実施例 ４〜６
エポキシ当量220のクレゾールノボラツク型エ
ポキシ樹脂（エポキシ樹脂Ｃ）、エポキシ当量370
の脂環式エポキシ樹脂（エポキシ樹脂Ｄ）、エポ
キシ当量290の臭素化エポキシノボラツク樹脂
（エポキシ樹脂Ｅ）、分子量800のフエノールノボ
ラツク樹脂硬化剤、テトラヒドロフタル酸無水
物、トリフエニルホスフイン、テトラキス（アセ
チルアセトナト）ジルコニウム、ジグリシナトパ
ラジウム、ジサリチルアルデヒド銅、２−フエニ
ルイミダゾール、石英ガラス粉末、カルナバワツ
クス、三酸化アンチモン、カーボンブラツク、シ
ランカツプリング剤を表−５に示す組成比（重量
部）に選び配合し、比較例を含め８種のエポキシ
樹脂系組成物を調製した。上記組成物の調製はそ
れぞれ選ばれた成分を加熱ロールで混練し、冷却
後粉砕することによつて行い、エポキシ樹脂系の
成形材料とした。
このようにして得た成形材料を用いてトランス
フア成形を行い、MOS型集積回路装置を封止し
た。成形は高周波予熱器で80℃に加熱した成形材
料を175℃で３分間モールドし、その後180℃で７
時間の後硬化することによつて行つた。樹脂封止
したMOS型集積回路装置各100個について実施例
１〜３と同様の条件でPCT、バイアスPCT、お
よび高温電気特性試験を行い、その結果をそれぞ
れ表−６，７，８に示した。[Table] Examples 4 to 6 Cresol novolak type epoxy resin with epoxy equivalent weight 220 (epoxy resin C), epoxy equivalent weight 370
alicyclic epoxy resin (epoxy resin D), brominated epoxy novolac resin (epoxy resin E) with an epoxy equivalent weight of 290, phenol novolac resin curing agent with a molecular weight of 800, tetrahydrophthalic anhydride, triphenylphosphine, tetrakis (Acetylacetonato)zirconium, palladium diglycinate, copper disalicylaldehyde, 2-phenylimidazole, quartz glass powder, carnauba wax, antimony trioxide, carbon black, and silane coupling agent in the composition ratios shown in Table 5 ( (parts by weight) to prepare eight types of epoxy resin compositions including a comparative example. The above compositions were prepared by kneading the respective selected components with heated rolls, cooling and pulverizing them to obtain an epoxy resin molding material. Transfer molding was performed using the molding material thus obtained to seal a MOS type integrated circuit device. For molding, the molding material was heated to 80℃ using a high-frequency preheater, and then molded at 175℃ for 3 minutes, and then heated to 180℃ for 7 minutes.
This was done by curing after a period of time. PCT, bias PCT, and high temperature electrical property tests were conducted on 100 resin-sealed MOS integrated circuit devices under the same conditions as in Examples 1 to 3, and the results are shown in Tables 6, 7, and 8, respectively. .
【表】【table】
【表】【table】
【表】【table】
【表】
更に潜在硬化性を調べるために室温下に放置し
て保存性を調べたところ実施例４は５週間、比較
例６は１週間の可使時間であつた。
実施例 ７
実施例４〜６で使用したものと同じ材料及びト
リス（アセチルアセトナト）アルミニウムを使用
して、表−９に示す組成（重量部）のエポキシ樹
脂系組成物を調製した。同時に、比較例としてト
リス（アセチルアセトナト）アルミニウムを含ま
ない他はすべて実施例７のものと同じ組成のエポ
キシ樹脂系組成物を調製した。上記組成物は、実
施例４〜６と同様の方法でエポキシ樹脂系の成形
材料とした。
このようにして得た成形材料を用いて、実施例
４〜６と同様の方法でMOS型集積回路装置を封
止した。樹脂封止したMOS型集積回路装置各100
個について、実施例１〜３と同様の条件で
PCT、バイアスPCT及び高温電気特性試験を行
い、その結果をそれぞれ表−10，11及び12に示し
た。[Table] Furthermore, in order to investigate the latent curing property, the preservability was examined by leaving it at room temperature, and the pot life of Example 4 was 5 weeks, and the pot life of Comparative Example 6 was 1 week. Example 7 Using the same materials and tris(acetylacetonato)aluminum as those used in Examples 4 to 6, an epoxy resin composition having the composition (parts by weight) shown in Table 9 was prepared. At the same time, as a comparative example, an epoxy resin composition having the same composition as that of Example 7 except that tris(acetylacetonato)aluminum was not included was prepared. The above composition was made into an epoxy resin molding material in the same manner as in Examples 4 to 6. Using the molding material thus obtained, MOS integrated circuit devices were sealed in the same manner as in Examples 4 to 6. 100 resin-sealed MOS integrated circuit devices each
under the same conditions as Examples 1 to 3.
PCT, bias PCT and high temperature electrical property tests were conducted and the results are shown in Tables 10, 11 and 12, respectively.
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】
上記実施例から明らかなように本発明に係る樹
脂封止型半導体装置は高信頼性を有しており、広
範な用途に提供することができる。[Table] As is clear from the above examples, the resin-sealed semiconductor device according to the present invention has high reliability and can be provided for a wide range of applications.
Claims (1)
ポキシ樹脂、 (b) ノボラツク型フエノール樹脂硬化剤、 (c) 有機ホスフイン化合物および (d) 金属キレート化合物 を必須成分とし、エポキシ樹脂100重量部に対
し、有機ホスフイン化合物が0.01〜20重量部の範
囲内にあり、かつ有機ホスフイン化合物100重量
部に対し、金属キレート化合物が１〜100重量部
の範囲内にあるエポキシ樹脂系組成物の硬化物に
よつて半導体装置が封止されていることを特徴と
する樹脂封止型半導体装置。 ２ 特許請求の範囲第１項の記載において、エポ
キシ樹脂系組成物が無機質充填剤を含有する樹脂
封止型半導体装置。 ３ 特許請求の範囲第２項において、無機質充填
剤の主成分が石英ガラス、結晶性シリカから選ば
れる少くとも１種である樹脂封止型半導体装置。 ４ 特許請求の範囲第１項または第２項におい
て、フエノール樹脂硬化剤のフエノール性水酸基
の数／エポキシ樹脂のエポキシ基の数の比が0.5
〜1.5の範囲内にある樹脂封止型半導体装置。 ５ 特許請求の範囲第１項または第２項におい
て、有機ホスフイン化合物が有機第３ホスフイン
化合物である樹脂封止型半導体装置。 ６ 特許請求の範囲第５項において、有機ホスフ
イン化合物がトリフエニルホスフインである樹脂
封止型半導体装置。 ７ 特許請求の範囲第１項または第２項におい
て、金属キレート化合物がAl，Co，Cr，Cu，
Fe，Mn，Ni，Pd，Rh，Ti，Ｖ，Zn，及びZrか
ら選ばれる金属のキレート化合物の１種又は２種
以上である樹脂封止型半導体装置。[Scope of Claims] 1. An epoxy resin comprising (a) a novolak type epoxy resin having an epoxy equivalent of 170 to 300, (b) a novolak type phenol resin curing agent, (c) an organic phosphine compound, and (d) a metal chelate compound as essential components. An epoxy resin composition in which the organic phosphine compound is in the range of 0.01 to 20 parts by weight with respect to 100 parts by weight of the resin, and the metal chelate compound is in the range of 1 to 100 parts by weight with respect to 100 parts by weight of the organic phosphine compound. 1. A resin-sealed semiconductor device, characterized in that the semiconductor device is sealed with a cured product. 2. A resin-encapsulated semiconductor device according to claim 1, wherein the epoxy resin composition contains an inorganic filler. 3. The resin-sealed semiconductor device according to claim 2, wherein the main component of the inorganic filler is at least one selected from quartz glass and crystalline silica. 4 In claim 1 or 2, the ratio of the number of phenolic hydroxyl groups in the phenolic resin curing agent/the number of epoxy groups in the epoxy resin is 0.5.
Resin-sealed semiconductor devices within the range of ~1.5. 5. The resin-sealed semiconductor device according to claim 1 or 2, wherein the organic phosphine compound is an organic tertiary phosphine compound. 6. The resin-sealed semiconductor device according to claim 5, wherein the organic phosphine compound is triphenylphosphine. 7 In claim 1 or 2, the metal chelate compound is Al, Co, Cr, Cu,
A resin-sealed semiconductor device comprising one or more metal chelate compounds selected from Fe, Mn, Ni, Pd, Rh, Ti, V, Zn, and Zr.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3783081A JPS57153022A (en) | 1981-03-18 | 1981-03-18 | Resin-sealed semiconductor device |
| DE8181104126T DE3163054D1 (en) | 1980-06-05 | 1981-05-29 | Resin encapsulation type semiconductor device |
| EP19810104126 EP0041662B1 (en) | 1980-06-05 | 1981-05-29 | Resin encapsulation type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3783081A JPS57153022A (en) | 1981-03-18 | 1981-03-18 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57153022A JPS57153022A (en) | 1982-09-21 |
| JPS6137788B2 true JPS6137788B2 (en) | 1986-08-26 |
Family
ID=12508439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3783081A Granted JPS57153022A (en) | 1980-06-05 | 1981-03-18 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153022A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150591U (en) * | 1984-09-08 | 1986-04-04 | ||
| JPS61203366A (en) * | 1984-08-28 | 1986-09-09 | 株式会社 セブン−イレブン・ジヤパン | Rice-ball packaging material |
| JPH0263381U (en) * | 1988-11-01 | 1990-05-11 | ||
| JPH0340155Y2 (en) * | 1985-06-25 | 1991-08-23 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967660A (en) * | 1982-10-12 | 1984-04-17 | Toshiba Corp | Resin sealed type semiconductor device |
| JPH0725994B2 (en) * | 1986-11-21 | 1995-03-22 | 株式会社東芝 | Epoxy resin composition for semiconductor device encapsulation |
| JP2001288338A (en) * | 2000-04-10 | 2001-10-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP3951639B2 (en) * | 2001-06-26 | 2007-08-01 | 松下電工株式会社 | Semiconductor sealing resin composition and semiconductor device |
| JP2014129475A (en) * | 2012-12-28 | 2014-07-10 | Kyoritsu Kagaku Sangyo Kk | Thermal cationic polymerizable composition |
-
1981
- 1981-03-18 JP JP3783081A patent/JPS57153022A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61203366A (en) * | 1984-08-28 | 1986-09-09 | 株式会社 セブン−イレブン・ジヤパン | Rice-ball packaging material |
| JPS6150591U (en) * | 1984-09-08 | 1986-04-04 | ||
| JPH0340155Y2 (en) * | 1985-06-25 | 1991-08-23 | ||
| JPH0263381U (en) * | 1988-11-01 | 1990-05-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57153022A (en) | 1982-09-21 |
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