JPS6130747B2 - - Google Patents
Info
- Publication number
- JPS6130747B2 JPS6130747B2 JP55087002A JP8700280A JPS6130747B2 JP S6130747 B2 JPS6130747 B2 JP S6130747B2 JP 55087002 A JP55087002 A JP 55087002A JP 8700280 A JP8700280 A JP 8700280A JP S6130747 B2 JPS6130747 B2 JP S6130747B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- nut
- terminal
- synthetic resin
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229920003002 synthetic resin Polymers 0.000 claims description 22
- 239000000057 synthetic resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005266 casting Methods 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010125 resin casting Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
この発明は、容器内に半導体素子を収容し、半
導体電子部品から上方に出されたリード端子の先
端を水平に折曲げ、端子ボルトにより外部の接続
線を接続されるようにし、容器内に樹脂を注型す
る樹脂封止半導体装置の製造方法に関する。Detailed Description of the Invention This invention accommodates a semiconductor element in a container, bends the tip of a lead terminal extending upward from the semiconductor electronic component horizontally, and connects an external connection wire with a terminal bolt. The present invention relates to a method of manufacturing a resin-sealed semiconductor device in which resin is cast into a container.
半導体素子や半導体混成集積回路などの電子部
品は、樹脂注型により気密に樹脂封止され、リー
ド端子が外部に出されている。 Electronic components such as semiconductor elements and semiconductor hybrid integrated circuits are hermetically sealed with resin by resin casting, and lead terminals are exposed to the outside.
従来の製造方法による樹脂封止半導体装置は、
第１図に縦断面図で示すようになつていた。１は
上部が開口した合成樹脂容器で、電気絶縁性をも
ち、熱伝導性を有するエポキシなどの合成樹脂材
からなる。２はこの合成樹脂容器１内に収容され
た半導体素子、３は一方の半導体素子２の陽電極
と他方の半導体素子２の陰電極とを接続する接続
導体で、共通のリード端子４が外部に引出されて
いる。５は一方の半導体素子２の陰電極から出さ
れたリード端子、６は他方の半導体素子１の陽電
極から出されたリード端子であり、各リード端子
の接続部にはボルト用穴７があけられている。８
は合成樹脂容器１内に注型され、各半導体素子２
やリード端子４〜６の下半部を気密に封止する封
止樹脂で、電気絶縁性及び熱伝導性に富むエポキ
シ系などの合成樹脂材を用いている。９は合成樹
脂材からなるふたで、リード用穴９ａにまだ折曲
げられてない各リード端子４〜６を通し、合成樹
脂容器１の開口部にはめる。９ｂは端子用ナツト
の挿入穴、９ｃは通し穴である。１１は外部の接
続線端子（図示は略す）の締付けボルトである。 Resin-sealed semiconductor devices manufactured using conventional manufacturing methods are
It was designed as shown in a longitudinal cross-sectional view in Figure 1. Reference numeral 1 denotes a synthetic resin container with an open top, which is made of a synthetic resin material such as epoxy that has electrical insulation and thermal conductivity. 2 is a semiconductor element housed in this synthetic resin container 1; 3 is a connecting conductor that connects the positive electrode of one semiconductor element 2 and the negative electrode of the other semiconductor element 2; a common lead terminal 4 is connected to the outside; It's being pulled out. 5 is a lead terminal taken out from the negative electrode of one semiconductor element 2, 6 is a lead terminal taken out from the positive electrode of the other semiconductor element 1, and a bolt hole 7 is made at the connection part of each lead terminal. It is being 8
is cast into a synthetic resin container 1, and each semiconductor element 2
This is a sealing resin that airtightly seals the lower halves of the lead terminals 4 to 6, and is made of a synthetic resin material such as epoxy, which is rich in electrical insulation and thermal conductivity. Reference numeral 9 denotes a lid made of a synthetic resin material, and each of the unbent lead terminals 4 to 6 is passed through the lead holes 9a and fitted into the opening of the synthetic resin container 1. 9b is an insertion hole for a terminal nut, and 9c is a through hole. 11 is a tightening bolt for an external connection line terminal (not shown).
上記従来装置の製造方法は、次のようになつて
いた。まず、合成樹脂容器１内に各半導体素子２
と、これらを接様した接続導体３及び各リード端
子４〜６の結合体を入れる。このとき各リード端
子４〜６の先端は鎖線で示すように、まだ折曲げ
られてない。次に、合成樹脂容器１内に注型樹脂
を注入し、硬化させて封止樹脂８を形成する。各
リード用穴９ａにそれぞれリード端子４〜６を通
して、ふた９を合成樹脂容器１の開口部にかぶせ
る。つづいて、各ナツト用穴９ｂに各端子用ナツ
ト１０を挿入する。各リード端子４〜６の先端部
をそれぞれ矢印Ａのように水平に折曲げ、この折
曲げ部を端子用ナツト１０の上面に当てる。 The method for manufacturing the above-mentioned conventional device was as follows. First, each semiconductor element 2 is placed in a synthetic resin container 1.
Then, a combination of the connecting conductor 3 and each of the lead terminals 4 to 6 is inserted. At this time, the tips of the lead terminals 4 to 6 are not yet bent, as shown by the chain lines. Next, a casting resin is injected into the synthetic resin container 1 and hardened to form the sealing resin 8. The lead terminals 4 to 6 are passed through each lead hole 9a, and the lid 9 is placed over the opening of the synthetic resin container 1. Subsequently, each terminal nut 10 is inserted into each nut hole 9b. The tip of each lead terminal 4 to 6 is bent horizontally as shown by arrow A, and this bent portion is applied to the upper surface of the terminal nut 10.
上記従来の製造方法では、ふた９を必要とし、
このふたを合成樹脂容器１にかぶせるのに、各リ
ード端子４〜６の位置がリード用穴９ａに合いに
くく、リード端子４〜６に無理が加わつて曲げモ
ーメントが作用し、半導体素子２を破損するおそ
れがあつた。また、各リード端子４〜６の先端部
を水平に折曲げたとき、ボルト用穴７の中心が端
子用ナツト１０の中心に合い難く、ボルト用穴７
を相当大きい径にしないと、締付けボルト１１の
ねじ締めが容易ではなかつた。 The conventional manufacturing method described above requires a lid 9,
When putting this lid on the synthetic resin container 1, the positions of the lead terminals 4 to 6 are difficult to match with the lead holes 9a, and the lead terminals 4 to 6 are strained and a bending moment is applied, damaging the semiconductor element 2. There was a risk that it would happen. Further, when the tip of each lead terminal 4 to 6 is bent horizontally, the center of the bolt hole 7 is difficult to align with the center of the terminal nut 10, and the bolt hole 7
The tightening bolt 11 could not be easily tightened unless it had a considerably large diameter.
この発明は、合成樹脂容器の開口部には従来の
ようなふたをかぶせず、合成樹脂容器内に入れら
れた半導体素子から上方に出された各リード端子
の先端部を水平に折曲げておき、この折曲げ部の
下面に端子用ナツトを当て、折曲げ部の上面から
締付けボルトをボルト用穴に通つて端子用ナツト
を締付けて保持しておき、合成樹脂容器内に注型
樹脂を注入し、注型上面が端子用ナツトを埋込む
高さ位置にし、硬化させて封止樹脂を形成し、従
来のように各リード端子に曲げモーメントが作用
することなく、これによる半導体素子の破損がな
くなり、リード端子の中心と端子用ナツトの中心
が一致され組立てが容易で安価な樹脂封止半導体
装置の製造方法を提供することを目的としてい
る。 In this invention, the opening of the synthetic resin container is not covered with a lid as in the conventional case, but the tips of each lead terminal extending upward from the semiconductor element placed in the synthetic resin container are bent horizontally. , place a terminal nut on the bottom of this bent part, pass a tightening bolt through the bolt hole from the top of the bent part, tighten and hold the terminal nut, and pour the casting resin into the synthetic resin container. The top surface of the casting mold is placed at a height that embeds the terminal nut, and is cured to form a sealing resin, which eliminates the bending moment that is applied to each lead terminal and prevents damage to the semiconductor element. It is an object of the present invention to provide a method for manufacturing a resin-sealed semiconductor device that is easy to assemble and inexpensive, in which the center of the lead terminal and the center of the terminal nut are aligned.
第２図はこの発明の一実施例の製造方法による
樹脂封止半導体装置の縦断面図であり、１〜３，
１０，１１は上記従来装置と同一のものである。
２０は接続導体３から外部に引出された共通のリ
ード端子で、先端部は水平に折曲げられている。
２１及び２２は各半導体素子２の電極からそれぞ
れ出されたリード端子で、先端部は水平に折曲げ
られている。各リード端子２０〜２２の折曲げ部
にはボルト用穴２３があけられている。２４は各
端子用ナツト１０の下部にはめられたキヤツプ
で、ナツト１０のねじ穴への注型樹脂の侵入を防
ぎ、かつ、逃し穴２４ａにより締付けボルト１１
の先端の逃しをも兼ねている。キヤツプ２４はエ
ポキシなどの合成樹脂又は合成ゴムなどの成型品
からなる。２５は合成樹脂容器１内に注型され、
各半導体素子２、各リード端子２０〜２１の下側
部を気密に封止する封止樹脂で、電気絶縁性、熱
伝達性に富むエポキシなどの合成樹脂を用い、注
型上面はナツト１０を上面側は残して埋込む位置
までにされている。 FIG. 2 is a longitudinal cross-sectional view of a resin-sealed semiconductor device manufactured by a manufacturing method according to an embodiment of the present invention.
Reference numerals 10 and 11 are the same as those in the conventional device.
Reference numeral 20 designates a common lead terminal drawn out from the connecting conductor 3, the tip of which is bent horizontally.
Lead terminals 21 and 22 are respectively extended from the electrodes of each semiconductor element 2, and their tips are bent horizontally. A bolt hole 23 is formed in the bent portion of each lead terminal 20-22. A cap 24 is fitted to the lower part of each terminal nut 10, and prevents molding resin from entering the screw hole of the nut 10, and also prevents the tightening bolt 11 from entering through the relief hole 24a.
It also serves as a relief for the tip. The cap 24 is made of a molded product of synthetic resin such as epoxy or synthetic rubber. 25 is cast into the synthetic resin container 1,
A sealing resin that airtightly seals the lower side of each semiconductor element 2 and each lead terminal 20 to 21 is made of a synthetic resin such as epoxy that has good electrical insulation and heat transfer properties. The upper surface side is left untouched to the point where it will be embedded.
上記一実施例の装置の製造方法は、次のように
する。まず、各半導体素子２の電極から出され、
あるいは各電極を接続した接続導体３から出され
た各リード端子２０〜２２の折曲げ部の下面に端
子用ナツト１０を当て、上面からボルト用穴２３
を通して締付けボルト１１をナツト１０にねじ込
み保持する。このとき端子用ナツト１０にはキヤ
ツプ２４がはめられている。こうして組合わされ
た結合体を、合成樹脂容器１内に入れる。つづい
て、合成樹脂容器１内に注型樹脂を注入し、注型
上面はナツト１０の上面側を残し埋込んだ位置に
して固定させる。注型樹脂を硬化させ、気密封止
した封止樹脂２５を形成する。 The method of manufacturing the device of the above embodiment is as follows. First, it is taken out from the electrode of each semiconductor element 2,
Alternatively, place the terminal nut 10 on the lower surface of the bent portion of each lead terminal 20 to 22 coming out from the connecting conductor 3 connected to each electrode, and insert the bolt hole 23 from the upper surface.
The tightening bolt 11 is screwed into the nut 10 and held there. At this time, the cap 24 is fitted onto the terminal nut 10. The combined body thus assembled is placed in a synthetic resin container 1. Subsequently, a casting resin is poured into the synthetic resin container 1, and the upper surface of the casting mold is fixed in a position where the upper surface of the nut 10 is embedded. The casting resin is cured to form a hermetically sealed sealing resin 25.
以上のように、この発明の方法によれば、半導
体素子から上方に出された各リード端子の先端部
を水平に折曲げ、この折曲げ部の下面に端子用ナ
ツトを当て、上面から締付けボルトをねじ込んで
保持しておき、これらの組合わされた結合体を合
成樹脂容器に入れ、この容器内に注型樹脂を注入
し、端子用ナツトを上面側は残して埋込む高さま
で注型しているので、各リード端子に曲げモーメ
ントが作用せず、半導体素子の破損が防止され、
また、各リード端子の折曲げ部のボルト用穴と端
子用ナツトの中心が合致して組立てが容易とな
り、従来のようなふたを要せず、安価にすること
ができる。 As described above, according to the method of the present invention, the tip of each lead terminal extended upward from the semiconductor element is bent horizontally, a terminal nut is applied to the lower surface of this bent portion, and the tightening bolt is tightened from the upper surface. Screw them in and hold them in place, place these combined bodies in a synthetic resin container, pour casting resin into the container, and cast the terminal nuts to the height where they will be embedded, leaving the top side intact. Because there is no bending moment acting on each lead terminal, damage to the semiconductor element is prevented.
In addition, the bolt hole in the bent portion of each lead terminal and the center of the terminal nut match, making assembly easy, eliminating the need for a conventional lid, and reducing costs.
第１図は従来の製造方法による樹脂封止半導体
装置の縦断面図、第２図はこの発明の一実施例の
製造方法による樹脂封止半導体装置の縦断面図で
ある。
１……合成樹脂容器、２……半導体素子、１０
……端子用ナツト、１１……締付けボルト、２０
〜２２……リード端子、２３……ボルト用穴、２
４……キヤツプ、２５……封止樹脂。尚、図中同
一符号は同一又は相当部分を示す。
FIG. 1 is a vertical cross-sectional view of a resin-sealed semiconductor device manufactured by a conventional manufacturing method, and FIG. 2 is a vertical cross-sectional view of a resin-sealed semiconductor device manufactured by a manufacturing method according to an embodiment of the present invention. 1...Synthetic resin container, 2...Semiconductor element, 10
...Terminal nut, 11...Tightening bolt, 20
~22...Lead terminal, 23...Bolt hole, 2
4... Cap, 25... Sealing resin. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
端子の、ボルト用穴があけられた先端部を水平に
折曲げ、この折曲げ部の下面に端子用ナツトを当
て、折曲げ部の上面から締付けボルトを通して上
記ナツトにねじ込み保持しておき、これらの組合
わされた結合体を上部が開口した合成樹脂容器内
に入れ、この容器内に注型樹脂を注入し上記ナツ
トの上面側を残して埋込む高さまで注型し、硬化
させ封止樹脂を形成する樹脂封止半導体装置の製
造方法。 ２ 樹脂を注入する前の段階において、ナツトの
下部にキヤツプをはめるようにしてなることを特
徴とする特許請求の範囲第１項記載の樹脂封止半
導体装置の製造方法。[Claims] 1. The tip of each lead terminal extended upward from the semiconductor electronic component, in which a bolt hole is drilled, is bent horizontally, a terminal nut is placed on the lower surface of this bent portion, and the lead terminal is folded. A tightening bolt is passed through the upper surface of the bent part and screwed into the above nut to hold it in place.The combined body is placed in a synthetic resin container with an open top, and casting resin is poured into this container to tighten the upper surface of the above nut. A method for manufacturing a resin-sealed semiconductor device, in which the mold is poured to a height where it will be embedded, leaving the sides intact, and then cured to form a sealing resin. 2. The method of manufacturing a resin-sealed semiconductor device according to claim 1, wherein a cap is fitted to the lower part of the nut at a stage before injecting the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8700280A JPS5710952A (en) | 1980-06-23 | 1980-06-23 | Resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8700280A JPS5710952A (en) | 1980-06-23 | 1980-06-23 | Resin sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710952A JPS5710952A (en) | 1982-01-20 |
| JPS6130747B2 true JPS6130747B2 (en) | 1986-07-15 |
Family
ID=13902671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8700280A Granted JPS5710952A (en) | 1980-06-23 | 1980-06-23 | Resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710952A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120390A (en) * | 1992-10-05 | 1994-04-28 | Fuji Electric Co Ltd | Terminal structure for resin sealing semiconductor device |
| JPH0969603A (en) * | 1995-09-01 | 1997-03-11 | Mitsubishi Electric Corp | Power semiconductor device and its outer package case and its manufacturing method |
| JP5253455B2 (en) * | 2010-06-01 | 2013-07-31 | 三菱電機株式会社 | Power semiconductor device |
| JP5823706B2 (en) * | 2011-02-28 | 2015-11-25 | 株式会社三社電機製作所 | Semiconductor device |
| JP5883337B2 (en) * | 2012-04-05 | 2016-03-15 | 株式会社指月電機製作所 | Capacitor |
| JP2014017446A (en) * | 2012-07-11 | 2014-01-30 | Toyota Industries Corp | Electronic component module and manufacturing method of the same |
| JP5490276B2 (en) * | 2013-03-05 | 2014-05-14 | 三菱電機株式会社 | Power semiconductor device |
| JP7117482B2 (en) * | 2018-02-23 | 2022-08-15 | パナソニックＩｐマネジメント株式会社 | capacitor |
-
1980
- 1980-06-23 JP JP8700280A patent/JPS5710952A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5710952A (en) | 1982-01-20 |
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| JPH0432758Y2 (en) | ||
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