JPS61296788A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JPS61296788A JPS61296788A JP13790485A JP13790485A JPS61296788A JP S61296788 A JPS61296788 A JP S61296788A JP 13790485 A JP13790485 A JP 13790485A JP 13790485 A JP13790485 A JP 13790485A JP S61296788 A JPS61296788 A JP S61296788A
- Authority
- JP
- Japan
- Prior art keywords
- atn
- substrate
- ceramic
- copper
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は回路基板に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to circuit boards.
従来から回路基板として用いられる材料にはＡｔρ３等
のセラミック基板、樹脂基板等の各種材料がある。なか
でもセラミック基板は機械的強度。Materials conventionally used for circuit boards include various materials such as ceramic substrates such as Atρ3 and resin substrates. Among these, ceramic substrates have high mechanical strength.
電気的絶縁性に優れており、広く用いられている。It has excellent electrical insulation properties and is widely used.
なかでも銅電極等の金属板を直接セラミックに接合した
ＤＢＣ（Ｄｉｒｅｃｔ Ｂｏｎｄ Ｃｏｐｐｅｒ ）基
板は、高電力用、高熱伝導基板として重要な役割りを果
している。さらにＤＢＣ基叛材料として従来用いられて
いるｈｔ＊Ｏｓ （アルミナ）セラミックよりもＡｔＮ
（窒化アルミニウム）の方が熱伝導率で優れているため
、ＡｔＮを用いたＤＢＣ基板が開発されている。Among these, DBC (Direct Bond Copper) substrates in which metal plates such as copper electrodes are directly bonded to ceramics play an important role as high power and high thermal conductivity substrates. Furthermore, AtN
(Aluminum nitride) has better thermal conductivity, so DBC substrates using AtN have been developed.
しかしながらＡｔ１０．の熱膨張係数が８ Ｘ １０−
’（１／ｄｅｇ）なのに対しｋｔＮの熱膨張係数は４
Ｘ １０−’（１／ ｄｅｇ ）でありＡｔＮではＣｕ
の１７Ｘ１０ （１／ｄｅｇ）とのくい違いがＡｔ！
０３より大きく、熱負荷により過大な引張応力がセラミ
ック内にかかり、割れ等が発生する問題があった。However, At10. The coefficient of thermal expansion is 8 x 10-
'(1/deg), whereas the thermal expansion coefficient of ktN is 4
X 10-' (1/deg) and Cu in AtN
The difference between this and 17X10 (1/deg) is At!
03, and there was a problem that excessive tensile stress was applied to the ceramic due to thermal load, causing cracks and the like.
本発明の目的は、セラミック破損問題の原因である、セ
ラミック内熱応力を低減することにある。The purpose of the present invention is to reduce thermal stress within the ceramic, which is the cause of ceramic failure problems.
実際のＤＢＣ基板においては、セラミック基板の上面す
なわち部品搭載面に電極パターンとしての金属板（Ｃｕ
）が接合されており、下面にヒートシンクハンダ付は用
（Ｃｕ）が接合されている。この上下面Ｃｕのパターン
や厚さが異なるため、製造時の高温から冷却される工程
において熱膨張係数のくい違いによる曲げ応力がかかり
、セラミック内に過大な引張応力が残留応力として残っ
てしまう。In an actual DBC board, a metal plate (Cu
) is bonded, and a heat sink solder (Cu) is bonded to the bottom surface. Since the patterns and thicknesses of the upper and lower Cu surfaces are different, bending stress is applied due to the difference in thermal expansion coefficients during the cooling process from the high temperature during manufacturing, and excessive tensile stress remains as residual stress within the ceramic.
と考えられる。したがって本発明は、上面電極用Ｃｕと
下面ヒートシンク付は用Ｃｕの形状を上下対称とするこ
とにより、基板全体の残留応力を圧縮側に移行させ、引
張力に弱いセラミックの破損を防ぐものである。it is conceivable that. Therefore, in the present invention, by making the shapes of the upper surface electrode Cu and the lower surface heat sink symmetrical, the residual stress of the entire substrate is shifted to the compressive side, thereby preventing damage to the ceramic, which is weak against tensile force. .
すなわち本発明はセラミック基板に直接金属板が接合さ
れた回路基板において、前記基板の両面に同形状の金属
板が接合したことを特徴とする回路基板である。特に金
属板としての銅は熱伝導性。That is, the present invention is a circuit board in which a metal plate is directly bonded to a ceramic substrate, characterized in that metal plates of the same shape are bonded to both surfaces of the substrate. Copper, especially as a metal plate, has good thermal conductivity.
電 導電性が曳好であるため好ましい。また同形状は形
状が略同−であることを意味するが、厚みも同一である
ことが望ましい。さらに金属板の形状は線対称であるこ
とが好ましい。It is preferable because it has good conductivity. Further, the same shape means that the shapes are substantially the same, but it is desirable that the thicknesses are also the same. Furthermore, it is preferable that the shape of the metal plate is line symmetrical.
セラミック基板としてはＡｔ、０３等一般のもので良い
が、特にＡｔＮ基板のごとく金属板との熱膨張率の差が
大きい場合、本発明は有効である。The ceramic substrate may be a general one such as At or 03, but the present invention is particularly effective when the difference in coefficient of thermal expansion from a metal plate is large, such as an AtN substrate.
窒化アルミニウムセラミックス基体は、ＡｔＮを主体と
する焼結体であり、イツトリウム、希土類金属（Ｌａ、
Ｃｅ、Ｐｒ、Ｎｄ、８ｍ、Ｇｄ、Ｄｙ等）、アルカリ土
類金属（Ｃａ、Ｓｒ、Ｂａ等）の添加成分を含んでもよ
い。このような添加物は、ＡｔＮの熱伝導性を劣化させ
ることなく厚膜導電ペーストの接続強度を高めることが
できる。添加量は少量で効果を発揮し、金属元素換算で
０．０１ｗｔ％〜１５ｗｔ％が好ましい。多すぎると熱
伝導性を劣化させてしまう。添加形態としては酸化物、
もしくは焼結後に酸化物となる例えば炭酸塩等の形で添
加しても良い。The aluminum nitride ceramic substrate is a sintered body mainly composed of AtN, yttrium, rare earth metals (La,
It may contain additional components such as Ce, Pr, Nd, 8m, Gd, Dy, etc.) and alkaline earth metals (Ca, Sr, Ba, etc.). Such additives can increase the connection strength of the thick film conductive paste without degrading the thermal conductivity of AtN. A small amount is effective, and the amount is preferably 0.01 wt% to 15 wt% in terms of metal element. If it is too large, thermal conductivity will deteriorate. Addition forms include oxides,
Alternatively, it may be added in the form of, for example, carbonate, which becomes an oxide after sintering.
又、直接金属銅板をＡｔＮ基体に接続Ｃｕ板をＡ−ｔＮ
上に載置した後金属銅の融点以下銅−酸化銅の共晶温度
以上で加熱することにより行なわれる。Also, directly connect a metal copper plate to an AtN substrate and connect a Cu plate to an AtN substrate.
This is carried out by heating the metal copper at a temperature below the melting point of copper and above the eutectic temperature of copper-copper oxide.
例えば空気中で１０００〜１４００℃の加熱を行ない、
あらかじめＡｔＮ基体表面に酸化物層を形成した後、タ
フピッチ銅等で形成されたリードフレームをＡｔＮ基体
上にのせ、加熱すれば良い。このタフピッチ鋼は、酸素
含有量が１００〜２ｏｏｏｐｐｍ程度であることが好ま
しく、このタフピッチ鋼を用いることにより、ＡｔＮ基
体との接合が強固となる。For example, heating at 1000 to 1400°C in air,
After forming an oxide layer on the surface of the AtN substrate in advance, a lead frame made of tough pitch copper or the like is placed on the AtN substrate and heated. This tough pitch steel preferably has an oxygen content of about 100 to 200 ppm, and by using this tough pitch steel, the bond with the AtN substrate becomes strong.
この加熱は銅の融点１０８３℃以下、銅−酸化鋼の共晶
温度以上で行なうことが好ましい。This heating is preferably carried out at a temperature below the melting point of copper, 1083° C., and above the eutectic temperature of copper-oxidized steel.
回路基板構造について有限要素解析したものを表１に示
す。Table 1 shows the finite element analysis of the circuit board structure.
表１ 基板の最大応力値と変形
上記解析は弾性解であるため実際の応力値はこれより低
いと考えられるが、大きさの比は同様である。表１から
明らかなように本発明による構造であれば内部引張応力
が小さくなる。特にＡｔＮ基板の場合従来、製品として
問題のなかったＡｔ、Ｏ。Table 1 Maximum stress value and deformation of substrate Since the above analysis is an elastic solution, the actual stress value is considered to be lower than this, but the magnitude ratio is the same. As is clear from Table 1, the structure according to the present invention reduces internal tensile stress. Particularly in the case of AtN substrates, At and O have not had any problems in the past as products.
の内部引張応力よりも低くなるため、前記問題は解決す
る。The above problem is solved because the internal tensile stress is lower than the internal tensile stress of .
以上説明したように本発明によればセラミック破損問題
のない回路基板を得ることができる。As explained above, according to the present invention, it is possible to obtain a circuit board free from the problem of ceramic damage.
第２図は従来のＤＥＣ基板の断面図である。この基板１
′は製造工程において徐冷される過程を径るが、Ｃｕの
熱膨張係数の方が大きいためＡｔＮセラミック４は全体
的に圧縮応力を受ける。しかし、電極用Ｃｕ２′とヒー
トシンクハンダ付は用Ｃｕ３’の形が異なるため基板１
′は上側に凸の曲げ変形を受ける。FIG. 2 is a cross-sectional view of a conventional DEC board. This board 1
' is slowly cooled in the manufacturing process, but since the coefficient of thermal expansion of Cu is larger, the AtN ceramic 4 is subjected to compressive stress as a whole. However, since the shape of Cu2' for electrodes and Cu3' for heat sink soldering are different, the board 1
′ undergoes an upwardly convex bending deformation.
また曲げ応力によりＡｔＮセラミック２４の上面には引
張応力がかかり、ＡｔＮ内は危険な応力状態となる。In addition, tensile stress is applied to the upper surface of the AtN ceramic 24 due to the bending stress, resulting in a dangerous stress state within the AtN.
一方、第１図は本発明によるＤＥＣ基板構造の断面図で
あるが、上下の銅パターン２，３が同形のため上記基板
１１と同一の温度変化を受けた場合でも基板１全体に曲
げ応力は働かない。したがってｈｔＮセラミック４′内
の応力は全体的に圧縮側に移行し、安全な応力状態とな
るため、その後の熱負荷に対しても破損することはない
。On the other hand, FIG. 1 is a cross-sectional view of the DEC board structure according to the present invention, and since the upper and lower copper patterns 2 and 3 are of the same shape, there is no bending stress in the entire board 1 even if it is subjected to the same temperature change as the board 11. I don't work. Therefore, the stress within the htN ceramic 4' shifts to the compressive side as a whole, resulting in a safe stress state, so that it will not break even under subsequent thermal loads.
発明の実施例ではＣｕとＡｔＮの構成について説明した
が、金属あるいはセラミックが他の材質のものでも同様
なことが言える。In the embodiments of the invention, a structure of Cu and AtN has been described, but the same can be said of other metals or ceramics.
第１図はこの発明によるＤＢＣ基板構造の断面図、第２
図は従来のＤＥＣ基板構造の断面図。
１、Ｉ＋・・・回路基板、
２．２１・・・電極用鋼パターン（金属板）３．３１・
・・ヒートシンクハンダ付は用銅パターン（金属板）
４．４１・・・セラミックス基板
代理人 弁理士 則 近 憲 佑（ほか１名）第２図FIG. 1 is a cross-sectional view of the DBC substrate structure according to the present invention, and FIG.
The figure is a cross-sectional view of a conventional DEC board structure. 1. I+... Circuit board, 2.21... Steel pattern for electrode (metal plate) 3.31.
... Copper pattern (metal plate) for heat sink soldering 4.41 ... Ceramic substrate agent Patent attorney Noriyuki Chika (and 1 other person) Figure 2
Claims (2)
板において、前記基板の両面に同形状の金属板が接合し
たことを特徴とする回路基板。(1) A circuit board in which a metal plate is directly bonded to a ceramic substrate, characterized in that metal plates of the same shape are bonded to both sides of the substrate.
求の範囲第１項記載の回路基板。(2) The circuit board according to claim 1, wherein the metal plate is a copper plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13790485A JPS61296788A (en) | 1985-06-26 | 1985-06-26 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13790485A JPS61296788A (en) | 1985-06-26 | 1985-06-26 | Circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61296788A true JPS61296788A (en) | 1986-12-27 |
Family
ID=15209396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13790485A Pending JPS61296788A (en) | 1985-06-26 | 1985-06-26 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61296788A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180133796A (en) | 2017-06-07 | 2018-12-17 | 가부시키가이샤 에스에이치 카퍼프로덕츠 | Oxygen free copper plate and ceramics wiring board |
-
1985
- 1985-06-26 JP JP13790485A patent/JPS61296788A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180133796A (en) | 2017-06-07 | 2018-12-17 | 가부시키가이샤 에스에이치 카퍼프로덕츠 | Oxygen free copper plate and ceramics wiring board |
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