JPS61252630A - Aligning method - Google Patents
Aligning methodInfo
- Publication number
- JPS61252630A JPS61252630A JP60093733A JP9373385A JPS61252630A JP S61252630 A JPS61252630 A JP S61252630A JP 60093733 A JP60093733 A JP 60093733A JP 9373385 A JP9373385 A JP 9373385A JP S61252630 A JPS61252630 A JP S61252630A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- semiconductor wafer
- vacuum
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ＸＹテーブルに載置したウェハを水平面内で
精密に移動させてマスクに対して位置合わせし、上記の
マスクとウェハとを密着せしめるアライメント方法に関
するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention involves precisely moving a wafer placed on an XY table in a horizontal plane to align it with a mask, and bringing the mask and wafer into close contact with each other. This relates to an alignment method.
半導体ウェハに回路パターンを焼き付ける場合、回路パ
ターンを設けたマスクに対して、感光剤を塗布した半導
体ウェハを密着させて露光せしめる方法が多く用いられ
る。When printing a circuit pattern on a semiconductor wafer, a method is often used in which a semiconductor wafer coated with a photosensitive agent is brought into close contact with a mask provided with a circuit pattern and exposed to light.
第２図は上記方法を説明する為の模式図である。FIG. 2 is a schematic diagram for explaining the above method.
１はＸＹテーブルであって、Ｘ軸方向に精密に駆動され
る下段テーブルｌａの上に、Ｙ軸方向（紙面と垂直）に
精密に駆動される上段テーブル１ｂを搭載した構造であ
る。Reference numeral 1 denotes an XY table, which has a structure in which an upper table 1b that is precisely driven in the Y-axis direction (perpendicular to the page) is mounted on a lower table la that is precisely driven in the X-axis direction.
上記の上段テーブル１ｂの上面に多数の***２を配列し
て真空吸着パッドが形成されている。A vacuum suction pad is formed by arranging a large number of small holes 2 on the upper surface of the upper table 1b.
上記の上段テーブルｌｂ上にウェハ３を載置して真空吸
着し、該ウェハ３の上方に、これと平行にマスク４が支
承される。A wafer 3 is placed on the upper table lb and vacuum-adsorbed, and a mask 4 is supported above and parallel to the wafer 3.
この状態でＸＹテーブル１を操作して、マスク４とウェ
ハ３とを精密に位置合わせ（アライメント）シ、ウェハ
３をマスク４に密着せしめて露光が行われる。In this state, the XY table 1 is operated to accurately align the mask 4 and the wafer 3, the wafer 3 is brought into close contact with the mask 4, and exposure is performed.
上記の位置合わせ操作中は、本第１図に示すように、ウ
ェハ３とマスク４との間に微少なりリアランスが必要で
あり、位置合わせを完了した後、ウェハ３を上昇せしめ
てマスク４に密着せしめることによりアライメント操作
が完了する。During the above alignment operation, a slight clearance is required between the wafer 3 and the mask 4, as shown in FIG. The alignment operation is completed by bringing them into close contact.
ウェハ３を上昇させてマスク４に密着させるについては
、例えばＸＹテーブル１を上昇せしめることも考えられ
るが、次に述べるような難かしい技術問題が有る。In order to raise the wafer 3 and bring it into close contact with the mask 4, it is conceivable to raise the XY table 1, for example, but there are difficult technical problems as described below.
（ａ） ウェハ３をマスク４に押し当てる力が過大で
あると、マスク４を歪ませたり傷っけたりする虞れが有
るので、適正な大きさの力で、静粛に押しつけなければ
ならない。(a) If the force with which the wafer 3 is pressed against the mask 4 is excessive, there is a risk of distorting or damaging the mask 4, so the wafer 3 must be pressed gently with an appropriate amount of force.
（ｂ） 押圧力が不均一であると密着性が悪くなるの
で、均一に押し付けねばならない。(b) If the pressing force is uneven, the adhesion will be poor, so it must be pressed uniformly.
本発明は上述の技術的問題を解消するために。 The present invention aims to solve the above-mentioned technical problems.
吸着バットに吸着されているウェハを静粛に押し上げて
均一な力でマスクに押し当てることができ、しかも、過
大な力で押圧する虞れの無いアライメント方法を提供す
ることを目的とする。To provide an alignment method capable of quietly pushing up a wafer sucked by a suction vat and pressing it against a mask with uniform force, and without the risk of pressing with excessive force.
上記の目的を達成するため、本発明の方法は、ＸＹテー
ブル上に載置した半導体ウェハと、上記半導体ウェハの
上方を覆って支承したマスクとを精密に位置合わせして
、上記の半導体ウェハとマスクとを密着せしめるアライ
メント方法において、前記のＸＹテーブルの上面に真空
吸着パッドを設けて半導体ウェハを吸着し、マスクの下
面側を窒素雰囲気とすると共に、マスク上面側に比して
減圧状態とし、ＸＹテーブルを水平面内で移動せしめて
マスクに対して位置合わせを行い、その後、前記の真空
吸着パッドから気体を噴出せしめて半導体ウェハを浮上
せしめてマスクに密着せしめることを特徴とする。In order to achieve the above object, the method of the present invention precisely aligns a semiconductor wafer placed on an XY table and a mask supported over the semiconductor wafer, and In an alignment method in which the XY table is brought into close contact with the mask, a vacuum suction pad is provided on the upper surface of the XY table to adsorb the semiconductor wafer, and the lower surface of the mask is in a nitrogen atmosphere and the pressure is reduced compared to the upper surface of the mask, The method is characterized in that the XY table is moved in a horizontal plane to align with the mask, and then gas is ejected from the vacuum suction pad to levitate the semiconductor wafer and bring it into close contact with the mask.
次に、本発明の１実施例について、第１図を参照しつつ
説明する。Next, one embodiment of the present invention will be described with reference to FIG.
この実施例（第１図）は１本発明方法を実施するため、
先に説明した第２図の従来装置を改良したアライメント
装置の模式図で、第２図と同一の図面参照番号を付した
部材は従来におけると同様乃至は類似の構成部材である
。In this example (FIG. 1), in order to carry out the method of the present invention,
This is a schematic diagram of an alignment device that is an improvement on the conventional device shown in FIG. 2 described above, in which members denoted by the same drawing reference numbers as in FIG. 2 are the same or similar components as in the conventional device.
ＸＹテーブル１の上段テーブル１ｂに設けた真空バット
の***２を、電磁弁５を介して窒素ボンベ６及び真空ポ
ンプ７に切替可能に接続する。A small hole 2 of a vacuum vat provided in the upper table 1b of the XY table 1 is switchably connected to a nitrogen cylinder 6 and a vacuum pump 7 via a solenoid valve 5.
電磁弁５を（Ａ）位置に作動させて真空ポンプ７に連通
せしめると、ウェハ３は仮想線で示したように上段テー
ブル１ｂに吸着保持されるので、この状態（仮想線位置
）でＸＹテーブル１を作動させてマスク４に対して精密
に位置合わせする。When the solenoid valve 5 is operated to the (A) position to communicate with the vacuum pump 7, the wafer 3 is attracted and held on the upper table 1b as shown by the imaginary line, so in this state (the imaginary line position), the XY table 1 to precisely position the mask 4.
次いで電磁弁５を（Ｂ）位置に切り替えて窒素ボンベ６
に連通せしめ、吸着バットの***２からＮ２ガスを吹き
出させる。Next, switch the solenoid valve 5 to the (B) position and open the nitrogen cylinder 6.
N2 gas is blown out from the small hole 2 of the suction vat.
ウェハ３はＮ２ガスに吹き上げられてマスク４に密着す
る。The wafer 3 is blown up by N2 gas and comes into close contact with the mask 4.
上記のようにウェハ３がＮ２気流によって押し上げられ
るので、該ウェハ３は全面的に均一にマスク４に押しつ
けられ、過大な押圧力や衝撃力を受ける虞れが無い。Since the wafer 3 is pushed up by the N2 air flow as described above, the wafer 3 is evenly pressed against the mask 4 over its entire surface, and there is no risk of receiving excessive pressing force or impact force.
上述の操作に際し、気圧調整手段（図示せず）を設けて
マスク４の上方の空間Ａは大気圧としたまま、下方の空
間Ｂを減圧する。このようにすると、マスク４は下方に
向かって凸になろうとする、方向の撓み力を受はウェハ
３′に対して完全に密着し易くなる。During the above operation, an air pressure adjusting means (not shown) is provided to reduce the pressure in the space B below while keeping the space A above the mask 4 at atmospheric pressure. In this way, the mask 4 receives a bending force in a direction that tends to become convex downward, and the mask 4 easily comes into complete contact with the wafer 3'.
また、噴出用の気体として窒素を用いると、ウェハに塗
布した感光剤と反応しない。Furthermore, when nitrogen is used as the ejecting gas, it does not react with the photosensitizer applied to the wafer.
本発明を実施する際、窒素ガスの代りにイナートガスを
用いることもできるが、イナートガスに比して窒素は安
価であるから実用価値が高い。When carrying out the present invention, inert gas can be used instead of nitrogen gas, but nitrogen is less expensive than inert gas, so it has higher practical value.
図示を省略するが、窒素ボンベ６と電磁弁５との間に圧
力制御弁若しくは流量制御弁を介装して窒素ガスの噴出
圧力、流量を加減すると、ウェハ３′の押圧力を自在に
一節することができる。Although not shown, by interposing a pressure control valve or a flow rate control valve between the nitrogen cylinder 6 and the electromagnetic valve 5 to adjust the ejection pressure and flow rate of the nitrogen gas, the pressing force on the wafer 3' can be adjusted freely. can do.
以上詳述したように１本発明のアライメント方法によれ
ば、吸着バットに吸着されているウェハを静粛に押し挙
げて、適正な力で均一にマスクに密着させることができ
るという優れた実用的効果を奏する。As detailed above, the alignment method of the present invention has the excellent practical effect of being able to gently push up the wafer that is being attracted to the suction vat and bring it into uniform contact with the mask using an appropriate force. play.
第１図は本発明方法を実施する為に構成したアライメン
ト装置を摸式適に描いた説明図である。
第２図は従来のアライメント方法を説明する為に示した
アライメント装置の模式図である。
１・・・ｘＹテーブル、１ａ・・・下段のテーブル、１
ｂ・・・上段のテーブル、２・・・真空バットを構成し
ている***、３，３′・・・ウェハ、４・・・マスク、
５・・・電磁弁、６・・・窒素ボンベ、７・・・真空ポ
ンプ。FIG. 1 is an explanatory diagram schematically depicting an alignment apparatus configured to carry out the method of the present invention. FIG. 2 is a schematic diagram of an alignment device shown for explaining a conventional alignment method. 1...xY table, 1a...lower table, 1
b... Upper table, 2... Small holes forming the vacuum vat, 3, 3'... Wafer, 4... Mask,
5...Solenoid valve, 6...Nitrogen cylinder, 7...Vacuum pump.
Claims (1)
ウェハの上方を覆って支承したマスクとを精密に位置合
わせして、上記の半導体ウェハとマスクとを密着せしめ
るアライメント方法において、前記のＸＹテーブルの上
面に真空吸着パッドを設けて半導体ウェハを吸着し、マ
スクの下面側を窒素雰囲気とすると共に、上面側に比し
て減圧状態とし、ＸＹテーブルを水平面内で移動せしめ
てマスクに対して位置合わせを行い、その後、前記の真
空吸着パッドから気体を噴出せしめて半導体ウェハを浮
上せしめてマスクに密着せしめることを特徴とするアラ
イメント方法。In an alignment method in which a semiconductor wafer placed on an XY table and a mask supported over the semiconductor wafer are precisely aligned to bring the semiconductor wafer and mask into close contact, the upper surface of the XY table A vacuum suction pad is installed on the wafer to attract the semiconductor wafer, the lower surface of the mask is placed in a nitrogen atmosphere, the pressure is reduced compared to the upper surface, and the XY table is moved in a horizontal plane to align the semiconductor wafer with respect to the mask. and then blowing out gas from the vacuum suction pad to levitate the semiconductor wafer and bring it into close contact with the mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60093733A JPS61252630A (en) | 1985-05-02 | 1985-05-02 | Aligning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60093733A JPS61252630A (en) | 1985-05-02 | 1985-05-02 | Aligning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61252630A true JPS61252630A (en) | 1986-11-10 |
Family
ID=14090609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60093733A Pending JPS61252630A (en) | 1985-05-02 | 1985-05-02 | Aligning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61252630A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990083568A (en) * | 1998-04-28 | 1999-11-25 | 다나카 아키히로 | Contact exposure method |
| KR100460031B1 (en) * | 1998-01-12 | 2005-02-24 | 삼성전자주식회사 | Solenoid valve of semiconductor device manufacturing equipment for making attachment and detachment of a wafer fast by adding one connection tool to the solenoid valve and injecting forcibly gas |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5295980A (en) * | 1976-02-07 | 1977-08-12 | Toshiba Corp | Mask fitting device of semiconductor substrate |
| JPS5341983A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Accurate position matching unit |
-
1985
- 1985-05-02 JP JP60093733A patent/JPS61252630A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5295980A (en) * | 1976-02-07 | 1977-08-12 | Toshiba Corp | Mask fitting device of semiconductor substrate |
| JPS5341983A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Accurate position matching unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100460031B1 (en) * | 1998-01-12 | 2005-02-24 | 삼성전자주식회사 | Solenoid valve of semiconductor device manufacturing equipment for making attachment and detachment of a wafer fast by adding one connection tool to the solenoid valve and injecting forcibly gas |
| KR19990083568A (en) * | 1998-04-28 | 1999-11-25 | 다나카 아키히로 | Contact exposure method |
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