JPS61231730A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS61231730A
JPS61231730A JP60073029A JP7302985A JPS61231730A JP S61231730 A JPS61231730 A JP S61231730A JP 60073029 A JP60073029 A JP 60073029A JP 7302985 A JP7302985 A JP 7302985A JP S61231730 A JPS61231730 A JP S61231730A
Authority
JP
Japan
Prior art keywords
lead
bonding
semiconductor device
manufacturing
copper alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60073029A
Other languages
Japanese (ja)
Other versions
JPH0422332B2 (en
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60073029A priority Critical patent/JPS61231730A/en
Publication of JPS61231730A publication Critical patent/JPS61231730A/en
Publication of JPH0422332B2 publication Critical patent/JPH0422332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/78261—Laser
    • H01L2224/78262—Laser in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
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    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2224/852—Applying energy for connecting
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    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To secure a good bonding property of the lead to the fine metal wire by a method wherein, during the process of bonding of the fine metal wire and the lead, the bonding areas of the lead are locally heated and are softened. CONSTITUTION:A copper alloy lead 4 and a semiconductor chip 2 are placed on a hot plate 6 at 250 deg.C or thereabouts. In that state, the electrode 3 of the semiconductor chip 2 is connected with the bonding areas of the copper alloy lead 4 using a copper wire 1 by an ultrasonic wave combined thermocompression bonding system, for example, yet during the bonding process, a laser beam 8 is irradiated on the back surfaces of the bonding areas of the copper alloy lead 4 from the lower side of the hot plate 6 and the bonding areas are heated over a temperature range of 260 deg.C-1,000 deg.C. Moreover, by forming the hardness of the lead into one of Hv 50-100 in the Vickers hardness, the bonding property of the lead to the fine metal wire is significantly improved.

Description

【発明の詳細な説明】 （産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にＩＣや
トランジスタなどの製造工程において、半導体チップ上
の電極とリード端子とを金属細線を用いて接続するワイ
ヤボンディング方法に関するものである。[Detailed Description of the Invention] (Industrial Application Field) This invention relates to a method for manufacturing semiconductor devices, and in particular, in the manufacturing process of ICs, transistors, etc., electrodes on a semiconductor chip and lead terminals are connected using thin metal wires. The present invention relates to a wire bonding method for connection.

〔従来の技術〕[Conventional technology]

従来この種の半導体装置においては、ワイヤ材として金
が用いられ、またリード表面には銀めっき等の表面処理
が施されていた。第４図は従来の方式で構成された半導
体装置の外観模式図を示す。Conventionally, in this type of semiconductor device, gold has been used as the wire material, and the lead surface has been subjected to surface treatment such as silver plating. FIG. 4 shows a schematic external view of a semiconductor device configured in a conventional manner.

図において、１は金属ワイヤ、２は半導体チップ、３は
半導体チップ２の表面に形成されたアルミニウム電極、
４は銅合金リード、５はリード４の表面に形成された銀
めっき層であり、上記ワイヤｌは主に超音波併用熱圧着
方式により電極３及びリード４に接合されている。In the figure, 1 is a metal wire, 2 is a semiconductor chip, 3 is an aluminum electrode formed on the surface of the semiconductor chip 2,
4 is a copper alloy lead, 5 is a silver plating layer formed on the surface of the lead 4, and the wire 1 is joined to the electrode 3 and the lead 4 mainly by thermocompression bonding combined with ultrasonic waves.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ここで材料原価低減及び素子の長期信頼性向上という観
点から、ワイヤ１材を金から銅に代えるとともに、リー
ド４材表面の銀めっき層５を省略し、リード４上に直接
銅ワイヤ１を接合することが考えられる。From the viewpoint of reducing material costs and improving the long-term reliability of the device, we changed the wire 1 material from gold to copper, omitted the silver plating layer 5 on the surface of the lead 4 material, and bonded the copper wire 1 directly onto the lead 4. It is possible to do so.

また超音波併用熱圧着ボンディングにおいて、良好な接
合状態を得るためには、材料表面の酸化被膜等の吸着物
を十分に破壊、除去すること、及び接合界面における材
料の塑性変形により、酸化膜破壊後の新生面同士の接触
面積を拡大することが極めて重要である。In addition, in thermocompression bonding using ultrasonic waves, in order to obtain a good bonding state, it is necessary to sufficiently destroy and remove adsorbed substances such as oxide films on the material surface, and to destroy the oxide film by plastic deformation of the material at the bonding interface. It is extremely important to expand the contact area between the newly formed surfaces.

しかるに銀めっき層５を省略し、銅合金リード４に直接
ボンディングを行なう場合、上記の２点、即ち酸化被膜
の除去及び接合界面での塑性変形の双方において、従来
の銀めっきリードに比べ、良好な結果を得ることが著し
く困難となる。そのためリード４へのボンディング時に
接合不良、即ち接合強度の不足、極端な場合はボンディ
ング時のはがれなどが発生する。However, when the silver plating layer 5 is omitted and bonding is performed directly to the copper alloy lead 4, the two points mentioned above, namely, the removal of the oxide film and the plastic deformation at the bonding interface, are better than the conventional silver plating lead. It becomes extremely difficult to obtain accurate results. Therefore, when bonding to the lead 4, a bonding failure occurs, that is, insufficient bonding strength, and in extreme cases, peeling occurs during bonding.

このような問題を解決する方法としては、上述のボンデ
ィング工程において、超音波の出力、即ち振動振幅を従
来の金の場合に比べて大きく設定することが考えられる
が、この方法では、十分な接合強度を得ようとすれば、
ボンディング中に銅線が変形しすぎ、銅線自体の強度が
低下してしまうおそれがある。One possible way to solve this problem is to set the ultrasonic output, that is, the vibration amplitude, in the bonding process described above to be larger than that for conventional gold, but this method does not allow sufficient bonding. If you want to gain strength,
The copper wire may be deformed too much during bonding, and the strength of the copper wire itself may be reduced.

この発明は上記のような問題点を解消するためになされ
たもので、金属細線とリードとの良好な接合性を確保で
きる半導体装置の製造方法を提供することを目的として
いる。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that can ensure good bonding between a thin metal wire and a lead.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体装置の製造方法は、金属細線とリ
ードとのボンディング工程中に、リードのボンディング
エリアを局所的に加熱軟化させるようにしたものである
。In the method for manufacturing a semiconductor device according to the present invention, the bonding area of the lead is locally heated and softened during the bonding process between the thin metal wire and the lead.

〔作用〕[Effect]

この発明においては、ボンディング工程中に、リードの
ボンディングエリアを局所的に加熱軟化させたことから
、リードの十分な機械的強度を維持しつつ、リードのボ
ンディングエリアの塑性変形態が向上し、金属細線とリ
ードとは大きな面積でもって接触した状態で接合される
ものである。In this invention, since the bonding area of the lead is locally heated and softened during the bonding process, the plastic deformation of the bonding area of the lead is improved while maintaining sufficient mechanical strength of the lead, and the metal The thin wire and the lead are bonded while being in contact with each other over a large area.

〔実施例〕〔Example〕

以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第１図及び第２図は本発明の一実施例による半導体装置
の製造方法を模式的に示したものである。FIGS. 1 and 2 schematically show a method for manufacturing a semiconductor device according to an embodiment of the present invention.

図において、第４図と同一符号は同図と同一のものを示
し、６はリード４のボンディングエリアと対応する箇所
に貫通孔６ａが形成され、リード４及び半導体チップ２
を加熱する所定温度、例えば２５０℃前後のホットプレ
ート、７はＹＡＧレーザあるいはアルゴンレーザ等のレ
ーザガン、８はレーザビーム、９はボンディングツール
であるキャピラリチップである。In the figure, the same reference numerals as those in FIG.
7 is a laser gun such as a YAG laser or an argon laser, 8 is a laser beam, and 9 is a capillary chip which is a bonding tool.

本実施例の方法では、従来の方法と同様に、２５０℃前
後のホットプレート６上にリード４及び半導体チップ２
を載置し、その状態で半導体チップ２の電極３と銅合金
リード４のボンディングエリアとを、例えば超音波併用
熱圧着方式でもって銅線１により結線するが、そのボン
ディング工程中にホットプレート６の下側より銅合金リ
ード４のボンディングエリア裏面にレーザビーム８を照
射してこれを２６０℃〜１０００℃の温度範囲に加熱す
る。In the method of this embodiment, as in the conventional method, the leads 4 and the semiconductor chip 2 are placed on a hot plate 6 at around 250°C.
In this state, the electrodes 3 of the semiconductor chip 2 and the bonding areas of the copper alloy leads 4 are connected with the copper wire 1 using, for example, an ultrasonic thermocompression bonding method. During the bonding process, the hot plate 6 A laser beam 8 is irradiated onto the back surface of the bonding area of the copper alloy lead 4 from below to heat it to a temperature range of 260°C to 1000°C.

銅合金リード４は、その機械的強度を確保するための金
属元素が添加されていことに加え、加工硬化履歴を受け
ており、銅線１に比べて相対的に硬さが高く、そのまま
では接合時に塑性変形しにくい。そこでレーザビーム８
を銅合金リード４のボンディングエリア裏面に照射する
ことにより、リード４としては十分な機械的強度を保ち
ながら、ボンディングエリアのみを局部的に軟化させる
ものである。Copper alloy lead 4 has metal elements added to ensure its mechanical strength, and has also undergone work hardening history, so it has a relatively high hardness compared to copper wire 1, and cannot be joined as is. Sometimes difficult to plastically deform. So laser beam 8
By irradiating the back surface of the bonding area of the copper alloy lead 4, only the bonding area is locally softened while maintaining sufficient mechanical strength of the lead 4.

また第２図は、実験により得られたリードの硬さと接合
強度との関係を示すが、リード硬さをピンカース硬さで
Ｈｖ５０〜１００にすることによって大幅に接合性が向
上することが分る。なお図中、ａは合格強度、即ち必要
な接合強度を示す。Furthermore, Figure 2 shows the relationship between lead hardness and bonding strength obtained through experiments, and it can be seen that bonding performance is significantly improved by setting the lead hardness to Hv50-100 in Pinkers hardness. . Note that in the figure, a indicates the acceptable strength, that is, the required bonding strength.

以上のような本実施例の方法ではリードの硬さを局部的
に低下させるようにしたで、銀めっきを省略した銅合金
リードへの銅線の接合性を大幅に向上でき、金、銀等の
貴金属材料の大幅な使用量の削減を達成できる。In the method of this embodiment as described above, by locally reducing the hardness of the lead, it is possible to greatly improve the bondability of the copper wire to the copper alloy lead without silver plating. A significant reduction in the amount of precious metal materials used can be achieved.

また第３図は本発明の他の実施例を模式的に示したもの
である。図において、第１図と同一符号は同図と同一の
ものを示し、１０は半導体チップ２を加熱する所定温度
、例えば２５０℃前後の第１のホットプレート、１１は
リード４を加熱する高温、例えば２６０℃〜８００℃の
温度範囲の第２のホントプレートである。Further, FIG. 3 schematically shows another embodiment of the present invention. In the figure, the same reference numerals as in FIG. 1 indicate the same parts as in the same figure, 10 is a first hot plate that heats the semiconductor chip 2 at a predetermined temperature, for example, around 250° C., 11 is a high temperature that heats the leads 4; For example, the second real plate has a temperature range of 260°C to 800°C.

本実施例の方法では、ボンディング工程中に、半導体チ
ップ２加熱用の第１のホントプレート１０とは別個に設
けた第２のホントプレート１１によりリード４を２６０
℃〜８００℃の温度範囲に加熱するものである。In the method of this embodiment, during the bonding process, the leads 4 are connected at 260° by the second real plate 11 provided separately from the first real plate 10 for heating the semiconductor chip 2.
It is heated to a temperature range of 800°C to 800°C.

なお、上記実施例では銅合金リードへの適用例を示した
が、鉄系リード等への通用に対しても同様の効果が得ら
れる。また金属細線は銅線ではなく、銅合金の細線であ
ってもよい。In the above embodiment, an example of application to a copper alloy lead was shown, but the same effect can be obtained when applied to an iron-based lead or the like. Further, the metal thin wire may be a copper alloy thin wire instead of a copper wire.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明に係る半導体装置の製造方法によ
れば、金属細線とリードとのボンディング工程中に、リ
ードのボンディングエリアを局所的に加熱するようにし
たので、リードと金属細線との良好な接合性を確保でき
、貴金属材料の使用量を大幅に削減することが可能とな
る効果がある。As described above, according to the method for manufacturing a semiconductor device according to the present invention, the bonding area of the lead is locally heated during the bonding process between the lead and the thin metal wire. This has the effect of ensuring good bonding properties and significantly reducing the amount of precious metal materials used.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例による半導体装置の製造方法
を示す模式図、第２図はリード硬さと接合強度との関係
を示す図、第３図は本発明の他の実施例を示す模式図、
第４図は従来の方法を説明するための模式図である。 １・・・銅線（金属細線）、２・・・半導体チップ、３
・・・ｔｍ、４・・・銅合金リード、８・・・レーザビ
ーム、１１・・・ホントプレート。 なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a schematic diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between lead hardness and bonding strength, and FIG. 3 is a diagram showing another embodiment of the present invention. Pattern diagram,
FIG. 4 is a schematic diagram for explaining the conventional method. 1... Copper wire (metal thin wire), 2... Semiconductor chip, 3
...tm, 4...copper alloy lead, 8...laser beam, 11...real plate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (6)

【特許請求の範囲】[Claims] （１）半導体チップ上の電極とリードとを金属細線を用
いて結線する半導体装置の製造方法において、ワイヤボ
ンディング工程中に、リードのボンディングエリアを局
所的に加熱軟化させることを特徴とする半導体装置の製
造方法。(1) A method for manufacturing a semiconductor device in which an electrode on a semiconductor chip and a lead are connected using a thin metal wire, wherein the bonding area of the lead is locally heated and softened during the wire bonding process. manufacturing method. （２）上記リードとして、銅合金又は鉄合金のものを用
いることを特徴とする特許請求の範囲第１項記載の半導
体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein the lead is made of a copper alloy or an iron alloy. （３）上記金属細線として、銅又は銅合金のものを用い
ることを特徴とする特許請求の範囲第１項記載の半導体
装置の製造方法。(3) The method for manufacturing a semiconductor device according to claim 1, characterized in that the thin metal wire is made of copper or a copper alloy. （４）上記リードのボンディングエリア裏面にレーザビ
ームを照射することを特徴とする特許請求の範囲第１項
記載の半導体装置の製造方法。(4) The method for manufacturing a semiconductor device according to claim 1, wherein the back surface of the bonding area of the lead is irradiated with a laser beam. （５）上記リードをホットプレートにより加熱すること
を特徴とする特許請求の範囲第１項記載の半導体装置の
製造方法。(5) The method for manufacturing a semiconductor device according to claim 1, wherein the lead is heated by a hot plate. （６）上記リードのボンディングエリアの硬さを局所的
にマイクロビッカース硬さ換算で５０〜１００の範囲に
調質することを特徴とする特許請求の範囲第１項記載の
半導体装置の製造方法。(6) The method of manufacturing a semiconductor device according to claim 1, wherein the hardness of the bonding area of the lead is locally tempered to a range of 50 to 100 in terms of micro-Vickers hardness.
JP60073029A 1985-04-05 1985-04-05 Manufacture of semiconductor device Granted JPS61231730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073029A JPS61231730A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073029A JPS61231730A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS61231730A true JPS61231730A (en) 1986-10-16
JPH0422332B2 JPH0422332B2 (en) 1992-04-16

Family

ID=13506511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073029A Granted JPS61231730A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS61231730A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878574B2 (en) 2002-01-17 2005-04-12 Sony Corporation Alloying method for a image display device using laser irradiation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878574B2 (en) 2002-01-17 2005-04-12 Sony Corporation Alloying method for a image display device using laser irradiation
US7008827B2 (en) 2002-01-17 2006-03-07 Sony Corporation Alloy method using laser irradiation
US7011990B2 (en) 2002-01-17 2006-03-14 Sony Corporation Alloying method using laser irradiation for a light emitting device
US7049227B2 (en) 2002-01-17 2006-05-23 Sony Corporation Method for alloying a wiring portion for a image display device
US7319052B2 (en) 2002-01-17 2008-01-15 Sony Corporation Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method

Also Published As

Publication number Publication date
JPH0422332B2 (en) 1992-04-16

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