JPS61222999A - Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v - Google Patents
Method of improving electric characteristics of single crystal of compound semiconductor of group iii-vInfo
- Publication number
- JPS61222999A JPS61222999A JP6310885A JP6310885A JPS61222999A JP S61222999 A JPS61222999 A JP S61222999A JP 6310885 A JP6310885 A JP 6310885A JP 6310885 A JP6310885 A JP 6310885A JP S61222999 A JPS61222999 A JP S61222999A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- compound semiconductor
- group iii
- crystal
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）利用分野
この発明は、琳結晶引上法により成長されたｌ−■族化
合物半導体墜結晶の電気的特性の不均一の改良に関する
。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Application This invention relates to improvement of non-uniformity in electrical properties of fallen crystals of I-III group compound semiconductors grown by the phosphorus crystal pulling method.
（ロ）従来技術及びこの発明が解決しようとする問題点
従来、Ｉ−Ｖ族化合物半導体単結晶？製造するには亀結
晶引上法としての液体封止チョクラルスキー（ＬＥＣ）
法によっている。このＬＥＣ法は。(b) Prior art and problems to be solved by the present invention Conventionally, I-V group compound semiconductor single crystal? Liquid Encapsulated Czochralski (LEC) as a Tortoise Crystal Pulling Method to Manufacture
It's according to the law. This LEC method.
第５図に示すようにるつぼ２１中に例えｔｆＧａＡｓ＠
液２２に’入れ、 Ｂ２０．の封止剤２３でＧａ人５融
液からの人Ｓの揮発？防ぎ、あらかじめ方位のきまった
種子結晶２４に’準備しておき、これ１ｋ ＧａＡｓ融
ｔＫつけて種子結晶２４と同じ方向？もつＧａＡｓ＊結
晶２５１’［長させる方法であるＩＩＣ法によって成長
されたままの璽−■族化合物半導体◆結晶１例えばＧａ
Ａｓ塔結晶は抵抗軍。As shown in FIG. 5, for example, tfGaAs@
B20. Volatilization of S from Ga5 melt with sealant 23? Prepare a seed crystal 24 with a fixed orientation in advance, apply 1k GaAs fusion tK to it, and put it in the same direction as the seed crystal 24. GaAs* crystal 251' [as grown by the IIC method, which is a lengthening method - Group compound semiconductor ◆Crystal 1 For example, Ga
The As tower crystal is the resistance army.
ホール移動度等の電気的特性が結晶成長方向及び結晶成
長方向と垂直な半径方向に大きな不拘−性？有・してい
る。このため、ＧａＡｓ単結晶を使用して中導体電子部
品′ｌｋ：製造した場合、その部品の′電気的特性に不
拘−？生じ、この結果、製品の歩留りが悉くなる欠点が
あった。特ＫＧａＡｓ！１１結晶を必要とし、かつ高い
集積度が５１求される集積回路（ＩＣ）又は大規模集積
回路（ＬＳＩ）ＶＣＧａＡｓ 本結晶が使用される場合
には、不均一な電気的特性？有するＧａＡｓ単結晶は即
、集積回路の電気的特性［８影響？及ぼすから不都合で
ある。したがって。Are electrical properties such as Hall mobility largely independent in the crystal growth direction and in the radial direction perpendicular to the crystal growth direction? Yes/Yes. For this reason, when a medium-conductor electronic component is manufactured using GaAs single crystal, there are no restrictions on the electrical characteristics of the component. As a result, there was a drawback that the yield of the product decreased. Special KGaAs! VCGaAs integrated circuits (ICs) or large-scale integrated circuits (LSIs) that require 11 crystals and a high degree of integration.If this crystal is used, will it have non-uniform electrical characteristics? The GaAs single crystal has an immediate impact on the electrical properties of integrated circuits [8 Effects? It is inconvenient because it affects therefore.
暎結晶引上法によって成長された鳳−Ｖ族化合物鱗結晶
の電気的特性の不拘−？改善する方法が望まれていた。Is there any restriction on the electrical properties of scale crystals of Otori group V compounds grown by the crystal pulling method? A method of improvement was desired.
この発明は、傘結晶引上法により成長したｌ−Ｖ族化合
物半導休業結晶の電気的特性の不均一性を減少する電気
的特性改良方法？提供すること？目的としている。This invention provides a method for improving the electrical properties of a l-V group compound semiconducting closed crystal grown by the umbrella crystal pulling method to reduce the non-uniformity of the electrical properties. What to offer? The purpose is
（ハ）問題点ｔＷ４決するための手段
この発明は、単結晶引上法により成長じたｉ−Ｖ族化合
物半導体単結晶の融点以下の温度で熱処理？行う工程？
備えろことにより前記目的？達成する。(c) Means for resolving problem tW4 Does this invention provide heat treatment at a temperature below the melting point of an i-V group compound semiconductor single crystal grown by the single crystal pulling method? What process do you do?
Be prepared for the above purpose? achieve.
に）作用
通常使用されろ墜結晶引上法、即ちＬＥＣ法により引上
げられたｌ−Ｖ族化合物半導体鱗結晶の構成元素のうち
揮発性元素の揮発を押える手段乞構じた後、インゴット
状態のまま７００℃以上の温度で１５分以上、好ましく
は８５０℃から当該暎結晶の融点（Ｃ’ａＡｓの場合は
１２３７℃）までの温度で６０分以上熱処理？行う。そ
して、熱処理的の略結晶と熱処理後の単結晶の電気的特
性？比較すると、熱処理後の単結晶は抵抗率、移動度共
に均一化が大幅に増進する。(2) Function: After creating a method for suppressing the volatilization of volatile elements among the constituent elements of l-V group compound semiconductor scale crystals pulled by the commonly used fallen crystal pulling method, that is, the LEC method, the ingot state is Heat treatment at a temperature of 700°C or higher for 15 minutes or more, preferably at a temperature from 850°C to the melting point of the acetate crystal (1237°C in the case of C'aAs) for 60 minutes or more. conduct. And what are the electrical properties of heat-treated crystals and single crystals after heat treatment? In comparison, the single crystal after heat treatment has significantly improved uniformity in both resistivity and mobility.
（イ）実施例
第６図に示すＬＥＣ法によりアンドープＧａＡｓ単結晶
？引き上げろ。引き上げに際しサンプリング位置の規格
化のため、種子結晶？使用しくシーディング）てから成
長したＧａＡｓ牟結晶の直径が５０ＩＩＪとなろＧａＡ
ｓ単結晶？試料に用いろ。引き上げられたＧａ人ｓ争結
晶は熱処理前後の電気的特性が比較できろように単結晶
成長方向の中心軸で２つに切断する。(a) Undoped GaAs single crystal by the LEC method shown in Example FIG. 6? Pull it up. Seed crystals to standardize the sampling position during pulling? The diameter of the GaAs crystal grown after seeding (seeding) is 50 IIJ.
s single crystal? Use it as a sample. The pulled Ga crystal was cut into two along the central axis in the single crystal growth direction so that the electrical properties before and after heat treatment could be compared.
２つに切断されたＧａＡｓ争結晶の試料１のうちの一つ
γインゴット状態のまま、第１図に示す石英アンプ／Ｌ
／２の中に封入する。石英アンプル２は基部６と先部４
の２つの部分からなり、先部４には排気口５が設けられ
ている。試料１の封入に際しては、まず石英アンプル基
部１ｉＣｖｃ料１？入れた後１石英アンプル先部４乞石
英アンプル基部６に合せ、この合わせた部分？浴着する
。そして。One of the sample 1 of GaAs crystals cut into two, still in the γ ingot state, is the quartz amplifier/L shown in Fig. 1.
Enclose in /2. The quartz ampule 2 has a base 6 and a tip 4.
It consists of two parts, and the tip part 4 is provided with an exhaust port 5. When enclosing sample 1, first place the quartz ampule base 1iCvc material 1? After putting it in, align the quartz ampoule tip 4 with the quartz ampoule base 6, and place the combined parts together. Put on a bathing suit. and.
排気口５から石英アンプル２内の空気？抜き、真空状態
にした後、排気ロ５ゲ溶着して石英アンプル２？封止す
る′。この状態において、均一加熱炉（１図示せず）ｌ
Ｃで約９７０℃の温度で５時間の熱処理を行い、放置し
く自然冷却する。Air in quartz ampoule 2 from exhaust port 5? After removing it and creating a vacuum state, weld the exhaust gas and make a quartz ampoule 2? Seal '. In this state, a uniform heating furnace (1 not shown)
C. for 5 hours at a temperature of about 970.degree. C., and then left to cool naturally.
久に、試料１％を石英アンプル２から収り出し。After a long time, 1% of the sample was taken out from quartz ampoule 2.
試料１０半径方向で７点につき、抵抗値、ホール移動度
の電気的特性ｔファン・デル・パラの法により測定τ行
い、抵抗値、ホール移動度の夫々の各７点の測定値の平
均値（ア）、標準偏差（σｎ−りオ！ヒｆ動幅（Ｖ −
’ｎ−１／ｙ）＜ １００ ） Ｙ：求メタ。Electrical characteristics of resistance value and Hall mobility were measured τ at 7 points in the radial direction of sample 10 using Van der Para's method, and the average value of the measured values at each of the 7 points for resistance value and Hall mobility was obtained. (a), standard deviation (σn-rio!hyf fluctuation width (V-
'n-1/y)<100) Y: desired meta.
同様に、２つに切断されたＧａＡｓ４Ｌ結晶の熱処理を
行なつ℃ない試料についても測定し、熱処理前と後の値
？比較した。上述と同一の条件で同一の測定１ｊｒ：３
つの試料について行った。この測定結果は下表の如くな
る。Similarly, a heat-treated sample of GaAs4L crystal cut into two was measured, and the values before and after the heat treatment were measured. compared. Same measurements under the same conditions as above 1jr:3
Two samples were tested. The results of this measurement are shown in the table below.
１掲の表から明らかなよ５ＶＣＧａｋｓ拳結晶［熱処理
？施すと、琳結晶の半径方向において抵抗＄。It is clear from the table 1 that 5VC Gaks fist crystal [heat treatment? When applied, the resistance $ in the radial direction of the Rin crystal.
ホール移動度は共に大巾に均一化が達成されている。In both cases, wide uniformity of hole mobility has been achieved.
第２図は、は結晶引上法により引上げた一結晶に熱処理
２行う場合、導結晶？構底する揮発性元素の揮発？押え
る他の実施例？示している。第２図において、容器１１
［４！ＧａＡｓ＄結晶１２が入わられろ、そして、第
２図に示す容器１１のＸ方向へと揮発性ガス、例えばＡ
ｒとＡＳＨ３のガスが加えられ、容？５１１の細い先部
へと通過する。このため容器１１内は一定圧力に維持さ
れろ、この状態で熱処理が行なわれる。Figure 2 shows that when a single crystal pulled by the crystal pulling method is subjected to heat treatment 2, is it a guiding crystal? Volatilization of volatile elements at the bottom? Other examples of holding down? It shows. In FIG. 2, container 11
[4! A GaAs$ crystal 12 is introduced, and a volatile gas, e.g. A
r and ASH3 gases are added, and the volume is ? 511 to the narrow tip. Therefore, the pressure inside the container 11 is maintained at a constant pressure, and the heat treatment is performed in this state.
なお、前記実施例においてはアンドープＧａＡｓ卑結晶
について述べたが、他のｌ−Ｖ族化合物半導体勢結晶１
例えばＩｎＰ・ＧａＰ ＶＣついても同様に適用するこ
とができる。In the above embodiment, an undoped GaAs base crystal was described, but other l-V group compound semiconductor crystals 1
For example, it can be similarly applied to InP/GaP VC.
また、前記実施例においてはアンドープの場合について
求べたが５例えばＰ、Ｂ、Ｉｎ・ｓｂ・Ｃｒなどがドー
プされたｌ−■族化合物半導体単結晶についても同様に
適用することができろ。Further, in the above embodiments, the undoped case has been described, but the present invention can be similarly applied to a single crystal of an l-■ group compound semiconductor doped with, for example, P, B, In.sb.Cr, or the like.
（へ）効果
この発明は、＊結晶引上法によって引上げられたＩ−Ｖ
族化合物半導体傘結晶、特ＫＧａＡｓ４Ｌ結晶の抵抗率
、移動度の電気的特性の不均一性？。(f) Effect This invention is based on *I-V pulled by the crystal pulling method.
Non-uniformity in the electrical properties of resistivity and mobility of group compound semiconductor umbrella crystals, especially KGaAs4L crystals? .
容易にしかも大幅に改良することができろ、このため、
ｈ該導結晶？用いた半導体電子部品の歩留りが向上し、
特に、ＩＣ，ＬＳＩに当該単結晶？利用する場合ｙ−は
、！気的特性の均一化の向上によりＩＣ，ＬＳＩの電気
的特性の均一化が図られ、信頼性？一層向上することが
できる。It can be easily and significantly improved; therefore,
h The guiding crystal? The yield of semiconductor electronic components used has improved,
In particular, is this single crystal applicable to ICs and LSIs? When using y-,! By improving the uniformity of electrical characteristics, the electrical characteristics of ICs and LSIs can be made uniform, improving reliability. This can be further improved.
４、〔図面のＦＩＩｌ！傘な説明〕
第１図はこの発明の実施に使用される揮発防止用の装置
の断面図、第２図は揮発防止用の装置の他の実施例図、
第３図は液体封止チョクラルスキー法の説明図である。4. [FIIl of the drawing! Umbrella Explanation] Fig. 1 is a sectional view of a device for preventing volatilization used in carrying out the present invention, Fig. 2 is a diagram of another embodiment of the device for preventing volatilization,
FIG. 3 is an explanatory diagram of the liquid-sealed Czochralski method.
１．１２・・・試料（ＧａＡｓ単結晶）、 ２・・・石
英アンプル、 ５・・・排気口、 １１・・・容器、
２１・・・るつぼ、 ２２・・・ＧａＡｓ融液、２５・
・・封止剤。1.12... Sample (GaAs single crystal), 2... Quartz ampoule, 5... Exhaust port, 11... Container,
21... Crucible, 22... GaAs melt, 25.
...Sealant.
２４・・・種子結晶、 ２５・・・ＧａＡｓ単結晶。24...Seed crystal, 25...GaAs single crystal.
Claims (1)
半導体単結晶をほぼ７００℃以上かつ当該III−Ｖ族化
合物半導体単結晶の融点以下の温度で熱処理を行うこと
を特徴とするIII−Ｖ族化合物半導体単結晶の電気的特
性改良方法。A III-V compound semiconductor single crystal pulled by a single crystal pulling method is heat-treated at a temperature of approximately 700° C. or higher and below the melting point of the III-V compound semiconductor single crystal. A method for improving the electrical properties of compound semiconductor single crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6310885A JPS61222999A (en) | 1985-03-27 | 1985-03-27 | Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6310885A JPS61222999A (en) | 1985-03-27 | 1985-03-27 | Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61222999A true JPS61222999A (en) | 1986-10-03 |
Family
ID=13219762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6310885A Pending JPS61222999A (en) | 1985-03-27 | 1985-03-27 | Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222999A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989008158A1 (en) * | 1988-02-24 | 1989-09-08 | Nippon Mining Co., Ltd. | Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same |
| JPH06196430A (en) * | 1992-12-22 | 1994-07-15 | Showa Denko Kk | Annealing method for inp single crystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732643A (en) * | 1980-08-06 | 1982-02-22 | Toshiba Corp | Annealing method of compound semiconductor single crystal |
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS60118700A (en) * | 1983-11-30 | 1985-06-26 | Fujitsu Ltd | Production of semiconductor crystal |
| JPS61151099A (en) * | 1984-12-22 | 1986-07-09 | Toshiba Corp | Quality modification of gaas single crystal |
| JPS61201700A (en) * | 1985-03-05 | 1986-09-06 | Sumitomo Electric Ind Ltd | High-resistance gaas crystal and its production |
-
1985
- 1985-03-27 JP JP6310885A patent/JPS61222999A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732643A (en) * | 1980-08-06 | 1982-02-22 | Toshiba Corp | Annealing method of compound semiconductor single crystal |
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS60118700A (en) * | 1983-11-30 | 1985-06-26 | Fujitsu Ltd | Production of semiconductor crystal |
| JPS61151099A (en) * | 1984-12-22 | 1986-07-09 | Toshiba Corp | Quality modification of gaas single crystal |
| JPS61201700A (en) * | 1985-03-05 | 1986-09-06 | Sumitomo Electric Ind Ltd | High-resistance gaas crystal and its production |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989008158A1 (en) * | 1988-02-24 | 1989-09-08 | Nippon Mining Co., Ltd. | Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same |
| US5219632A (en) * | 1988-02-24 | 1993-06-15 | Haruhito Shimakura | Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals |
| JPH06196430A (en) * | 1992-12-22 | 1994-07-15 | Showa Denko Kk | Annealing method for inp single crystal |
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