JPS61208769A - Positive resistance temperature coefficient resistor - Google Patents
Positive resistance temperature coefficient resistorInfo
- Publication number
- JPS61208769A JPS61208769A JP4901485A JP4901485A JPS61208769A JP S61208769 A JPS61208769 A JP S61208769A JP 4901485 A JP4901485 A JP 4901485A JP 4901485 A JP4901485 A JP 4901485A JP S61208769 A JPS61208769 A JP S61208769A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- coefficient resistor
- resistance temperature
- positive resistance
- crystalline resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、暖房器具等に用いられる自己温度制御ヒータ
に使用される抵抗体に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resistor used in a self-temperature control heater used in a heating appliance or the like.
従来の技術
従来のこの種の正抵抗温度係数抵抗体は、ポリエチレン
等の結晶性樹脂とカーボン・ブラック等の導電性粒子と
から構成されていた。BACKGROUND OF THE INVENTION Conventional positive resistance temperature coefficient resistors of this type are composed of a crystalline resin such as polyethylene and conductive particles such as carbon black.
発明が解決しようとする問題点
この種の正抵抗温度抵抗体を用いてヒータとした場合の
構成を第２図に示す。第２図に示すように、一対の電極
１．２の周囲に配置された正抵抗温度係数抵抗体３によ
り構成されている。ここで、この種の正抵抗温度係数抵
抗体の抵抗温度特性を第３図に示す。第３図に示すよう
に、抵抗温度特性は結晶性樹脂の軟化点Ｔｖ で急激に
立ち上がる傾向がある。ここで、このヒータにおいて、
一対の電極間に電圧を印加した場合、放熱特性によシミ
極１．２間の中心部分が最も温度が高くなる。Problems to be Solved by the Invention FIG. 2 shows the configuration of a heater using this type of positive resistance temperature resistor. As shown in FIG. 2, it is composed of a positive resistance temperature coefficient resistor 3 placed around a pair of electrodes 1.2. Here, the resistance temperature characteristics of this type of positive resistance temperature coefficient resistor are shown in FIG. As shown in FIG. 3, the resistance-temperature characteristics tend to rise sharply at the softening point Tv of the crystalline resin. Here, in this heater,
When a voltage is applied between a pair of electrodes, the center portion between the stain electrodes 1 and 2 has the highest temperature due to heat dissipation characteristics.
ゆえに、電極１．２間の中心部分が増々抵抗が高くなり
、これによって、電極１．２間に、低抵抗、高抵抗、低
抵抗の抵抗体が電極的に直列につながった状態と等価な
る。このため、電ｆＭｌ、２間に電圧を印加をしても、
電極１．２間の中心部分に集中して電圧が印加された状
態となシ、増々正抵抗温度係数抵抗体３内部の温度分布
が大きくなるという問題点を有していた。この状態を第
４図に示す。ただし、ｌは電極１，２間の距離を、Ｘは
測定位置と電極１との距離をあられしている。また、こ
の温度分布のために、正抵抗温度係数抵抗体３を構成し
ている結晶性樹脂が、位置によシ劣化速度が灰なるとい
う問題点も同時に有していた。Therefore, the resistance of the central part between electrodes 1 and 2 becomes higher and higher, which is equivalent to a state in which resistors of low resistance, high resistance, and low resistance are connected in series between electrodes 1 and 2. . Therefore, even if a voltage is applied between the electric current fMl and 2,
When the voltage is applied concentratedly to the central portion between the electrodes 1 and 2, there is a problem in that the temperature distribution inside the positive resistance temperature coefficient resistor 3 becomes larger and larger. This state is shown in FIG. However, l represents the distance between electrodes 1 and 2, and X represents the distance between the measurement position and electrode 1. Further, due to this temperature distribution, the crystalline resin constituting the positive resistance temperature coefficient resistor 3 has the problem that the rate of deterioration varies depending on the position.
本発明はかかる従来の問題を解消するもので、正抵抗温
度係数抵抗体３内部の電圧集中を少なくし、均一な発熱
をする抵抗体を提供することを目的とする。The present invention is intended to solve such conventional problems, and aims to provide a resistor that reduces voltage concentration inside the positive resistance temperature coefficient resistor 3 and generates heat uniformly.
問題点を解決するだめの手段
上記問題点を解決するために、本発明の正抵抗温度係数
抵抗体は結晶性樹脂と、導電性粒子と、非線形半導体粒
子とから成るものである。Means for Solving the Problems In order to solve the above problems, the positive resistance temperature coefficient resistor of the present invention is composed of a crystalline resin, conductive particles, and nonlinear semiconductor particles.
作 用
本発明はと記の構成によって、正抵抗温度係数抵抗体内
に非線形半導体粒子が分散されているために、電圧が集
中した場合、非線形半導体粒子がバリスター的役目を果
し、電圧を正抵抗温度抵抗体内に均一に分散させる。Effect of the Invention According to the structure of the present invention, nonlinear semiconductor particles are dispersed within a positive resistance temperature coefficient resistor, so that when a voltage is concentrated, the nonlinear semiconductor particles act as a varistor and correct the voltage. Distribute the resistance uniformly within the temperature resistor.
実施例
以下、本発明の詳細な説明する。結晶性樹脂としてポリ
エチレン（１００重量部）に、導電性粒子としてカーボ
ン・ブラック（２０重量部）と、非線形半導体粒子とし
て酸化亜鉛を主成分とし、副成分として酸化ビスマスを
含んだ焼結体（１５重量部、平均粒子径１１１ｍ）とを
分散して構成される。EXAMPLES The present invention will be described in detail below. A sintered body (15 parts by weight) containing polyethylene (100 parts by weight) as a crystalline resin, carbon black (20 parts by weight) as a conductive particle, and zinc oxide as a main component and bismuth oxide as a subcomponent as a nonlinear semiconductor particle. parts by weight, average particle diameter 111 m).
上記構成における抵抗温度特性は、従来例の抵抗温度特
性である、第３図とほとんど変わりはない。The resistance-temperature characteristics in the above configuration are almost the same as those in FIG. 3, which are the resistance-temperature characteristics of the conventional example.
しかし、電圧を１００ｖ印加し、その温度分布をみると
、第１図に示すように、放熱により生じる温度分布以外
の特異な分布はみられず、均一な発熱する効果がある。However, when a voltage of 100 V is applied and the temperature distribution is observed, as shown in FIG. 1, no peculiar distribution other than the temperature distribution caused by heat radiation is observed, and there is an effect of uniform heat generation.
これは、上記焼結体が、バリスター的役目を果し、均一
な電圧印加がなされたためと思われる。また、ポリエチ
レンに比べ酸化亜鉛は１００倍熱伝導度をもち、これに
よっても温変分布を少なくさせる効果もあわせてもって
いる。This seems to be because the sintered body acted like a varistor and applied a uniform voltage. Furthermore, zinc oxide has 100 times higher thermal conductivity than polyethylene, which also has the effect of reducing temperature variation distribution.
なお、上記実施例では、非線形半導体粒子の副成分とし
て酸化ビスマスを用いたが、コバルト、マンガン、バリ
ウム、プロトマクチニウム、プラセオジム、ランタン、
タングステン等の酸化物のうち少なくとも１つ用いても
同様な結果が得られる。In the above example, bismuth oxide was used as a subcomponent of the nonlinear semiconductor particles, but cobalt, manganese, barium, protomactinium, praseodymium, lanthanum,
Similar results can be obtained by using at least one of oxides such as tungsten.
なお、上記実施例では、結晶性樹脂として、ポリエチレ
ンヲ用いたが、ポリプロピレン、エチレン酢酸ビニル共
重合体を用いても、抵抗温度特性の抵抗値の立ち上がシ
温度に差はあるものの、同様な効果が得られるのは明ら
かである。In the above example, polyethylene was used as the crystalline resin, but even if polypropylene or ethylene-vinyl acetate copolymer was used, the same result would be obtained, although there would be a difference in the rise temperature of the resistance value of the resistance-temperature characteristic. It is clear that this will have a significant effect.
なお、上記実施例では、導電性粒子にカーボン・ブラッ
クを用いたが、金属粒子、導電性金属酸化物粒子を用い
ても同様な効果が得られるのは明らかである。In the above embodiment, carbon black was used as the conductive particles, but it is clear that similar effects can be obtained by using metal particles or conductive metal oxide particles.
発明の効果
以とのように、本発明の正抵抗温度係数抵抗体によれば
、次の効果が得られる。Effects of the Invention As described above, the positive resistance temperature coefficient resistor of the present invention provides the following effects.
（１）正抵抗温度係数抵抗体内に分散した非線形半導体
粒子がバリスター的役目を果して電圧の集中を防止し、
正抵抗温度係数抵抗体内の電圧が均一になるために、均
一な発熱を得ることができる。(1) Nonlinear semiconductor particles dispersed within the positive resistance temperature coefficient resistor function as a varistor to prevent voltage concentration;
Since the voltage within the positive resistance temperature coefficient resistor becomes uniform, uniform heat generation can be obtained.
（２）均一な発熱のために、正抵抗温度係数抵抗体の主
成分である結晶性樹脂の劣化速度が位置により異ならず
、減速される。(2) Because of uniform heat generation, the deterioration rate of the crystalline resin, which is the main component of the positive resistance temperature coefficient resistor, does not vary depending on the position and is slowed down.
第２図は同正抵抗温度係数抵抗体を用いたヒータの一部
切欠斜視図、第３図は従来の正抵抗温度係数抵抗体の抵
抗温度特性図、第４図は従来の正抵抗温度係数抵抗体の
温度分布図である。Figure 2 is a partially cutaway perspective view of a heater using the same positive resistance temperature coefficient resistor, Figure 3 is a resistance temperature characteristic diagram of a conventional positive resistance temperature coefficient resistor, and Figure 4 is a diagram of a conventional positive resistance temperature coefficient resistor. It is a temperature distribution diagram of a resistor.
１．２・・・・・・１対の電極、３・・・・・・正抵抗
温度係数抵抗体。1.2... A pair of electrodes, 3... Positive resistance temperature coefficient resistor.
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図 ／、？、、、化極
第３図
ｖ
温浸［′Ｃ〕Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 /,? ,,, Figure 3 v Digestion ['C]
Claims (7)
とから成る正抵抗温度係数抵抗体。(1) A positive resistance temperature coefficient resistor comprising a crystalline resin, conductive particles, and nonlinear semiconductor particles.
チレン酢酸ビニル共重合体の少なくとも１つを含む特許
請求の範囲第１項記載の正抵抗温度係数抵抗体。(2) The positive resistance temperature coefficient resistor according to claim 1, wherein the crystalline resin contains at least one of polyethylene, polypropylene, and ethylene-vinyl acetate copolymer.
の範囲第１項記載の正抵抗温度係数抵抗体。(3) A positive resistance temperature coefficient resistor according to claim 1, wherein the conductive particles are carbon black.
成物として、ビスマス、コバルト、マンガン、バリウム
、プロトアクチニウム、プラセオジム、ランタン、タン
グステン等の酸化物が少なくとも１つ含まれる特許請求
の範囲第１項記載の正抵抗温度係数抵抗体。(4) The nonlinear semiconductor particles contain zinc oxide as a main component and at least one oxide of bismuth, cobalt, manganese, barium, protactinium, praseodymium, lanthanum, tungsten, etc. as a subcomposition. Positive resistance temperature coefficient resistor according to item 1.
μｍの範囲である特許請求の範囲第１項または第４項記
載の正抵抗温度係数抵抗体。(5) The particle diameter of the nonlinear semiconductor particles is from 0.3 μm to 20 μm.
A positive temperature coefficient resistor according to claim 1 or claim 4, wherein the positive resistance temperature coefficient resistor has a temperature coefficient of resistance in the range of μm.
して５重量部から３０重量部の範囲で含まれる特許請求
の範囲第１項または第４項記載の正抵抗温度係数抵抗体
。(6) The positive resistance temperature coefficient resistor according to claim 1 or 4, wherein the nonlinear semiconductor particles are contained in an amount of 5 to 30 parts by weight based on 100 parts by weight of the crystalline resin.
対して１０重量部から３５重量部の範囲で含まれる特許
請求の範囲第３項記載の正抵抗温度係数抵抗体。(7) The positive resistance temperature coefficient resistor according to claim 3, wherein carbon black is contained in a range of 10 to 35 parts by weight based on 100 parts by weight of the crystalline resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4901485A JPS61208769A (en) | 1985-03-12 | 1985-03-12 | Positive resistance temperature coefficient resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4901485A JPS61208769A (en) | 1985-03-12 | 1985-03-12 | Positive resistance temperature coefficient resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61208769A true JPS61208769A (en) | 1986-09-17 |
Family
ID=12819281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4901485A Pending JPS61208769A (en) | 1985-03-12 | 1985-03-12 | Positive resistance temperature coefficient resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61208769A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117090A (en) * | 1988-10-26 | 1990-05-01 | Matsushita Electric Ind Co Ltd | Article to be heated by microwave |
| WO1991007804A1 (en) * | 1989-11-13 | 1991-05-30 | Nkk Corporation | Small dc motor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414034A (en) * | 1977-07-01 | 1979-02-01 | Matsushita Electric Ind Co Ltd | Heating element |
| JPS566397A (en) * | 1979-06-28 | 1981-01-22 | Okazaki Mfg Co Ltd | Heater |
-
1985
- 1985-03-12 JP JP4901485A patent/JPS61208769A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414034A (en) * | 1977-07-01 | 1979-02-01 | Matsushita Electric Ind Co Ltd | Heating element |
| JPS566397A (en) * | 1979-06-28 | 1981-01-22 | Okazaki Mfg Co Ltd | Heater |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117090A (en) * | 1988-10-26 | 1990-05-01 | Matsushita Electric Ind Co Ltd | Article to be heated by microwave |
| WO1991007804A1 (en) * | 1989-11-13 | 1991-05-30 | Nkk Corporation | Small dc motor |
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