JPS6120694A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS6120694A
JPS6120694A JP59139109A JP13910984A JPS6120694A JP S6120694 A JPS6120694 A JP S6120694A JP 59139109 A JP59139109 A JP 59139109A JP 13910984 A JP13910984 A JP 13910984A JP S6120694 A JPS6120694 A JP S6120694A
Authority
JP
Japan
Prior art keywords
wire
conductivity
ball
bonding wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59139109A
Other languages
Japanese (ja)
Other versions
JPH0520494B2 (en
Inventor
Shigemi Yamane
山根　茂美
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
安藤　鉄男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59139109A priority Critical patent/JPS6120694A/en
Publication of JPS6120694A publication Critical patent/JPS6120694A/en
Publication of JPH0520494B2 publication Critical patent/JPH0520494B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To suppress H2, O2, N2 and CO gas, to improve the ball joining strength, and also to improve the conductivity by limiting an element and a component of a lead bonding wire. CONSTITUTION:As for an element composition of a bonding wire, it contains >=0.001% and >=0.1% by a weight ratio >= kinds of elements selected among Be, Sn; Zn; Zr; Ag; Gr and Fe, and the balance is copper. In this regard, Ag; Zr; and Cr among said elements do not lower the conductivity so much, and the gas generation preventing effect is high. However, if they are added to much, the conductivity is lowered, therefore, its component range is set to 0.005-0.08W%.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、銅系ポンディングワイヤーに関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a copper-based bonding wire.

〔発明の技術的背景及びその問題点〕[Technical background of the invention and its problems]

ＩＣやＴ、　Ｓ　Ｉ等の半導体素子の内部では、例えば
、図面に示すように、半導体チップ＋１１及びリードフ
ィンガー（２）が設けられており、これらを線径１０〜
１００μ程度のポンディングワイヤー（３）で結ぶ借造
となっている。Inside a semiconductor element such as an IC, T, or SI, a semiconductor chip +11 and a lead finger (2) are provided, for example, as shown in the drawing.
It is a borrowed structure connected with a bonding wire (3) of about 100μ.

このボンディングワイヤー（３）の接合方法としては、
まずワイヤーの先端をポール状に加熱溶融させ、次にこ
のポール状の先端を半導体チップ０）に圧接し、更に弧
を描くようにワイヤーを延ばし、３００〜３５０℃に加
熱されたリードフィンガー（２）にワイヤーの一部を再
度圧接し、切断するこきにより、半導体チップ（１）と
リードフィンガー（２）とを結線するものである。The bonding method for this bonding wire (3) is as follows:
First, the tip of the wire is heated and melted into a pole shape, then this pole-shaped tip is pressed against the semiconductor chip 0), the wire is further extended in an arc, and the lead finger (2 ), and then the semiconductor chip (1) and the lead fingers (2) are connected by pressing a part of the wire again and cutting it.

この種のボンディングワイヤーとして導η。This kind of bonding wire is introduced as η.

性、ワイヤー伸び、ワイヤー強度、半導体チップとの接
合強度（以下ポール接合強度と称す。）及びボール形成
性が要求されており、従来から主ｌこ金線が使用されて
いる。Since wire wires are required to have good properties such as wire elongation, wire strength, bonding strength with a semiconductor chip (hereinafter referred to as pole bonding strength), and ball formability, a metal wire has traditionally been used.

しかし、近年、価格及び導電性の点からボンディングワ
イヤーとして、鋼船を用いる訊みがなされているか、銅
線を用いて熱圧接を行なうと、ボール接合強度が十分量
ない場合がしばしばあり、一方、この点を改善しようと
すると、導電性が低下し、双方の特性を満足する銅リー
ドワイヤーが得られなか′った。However, in recent years, attempts have been made to use steel wire as bonding wire due to cost and conductivity, or when thermal pressure welding is performed using copper wire, the ball bonding strength is often insufficient. However, when attempts were made to improve this point, the conductivity deteriorated, making it impossible to obtain a copper lead wire that satisfied both characteristics.

〔発明の目的〕[Purpose of the invention]

本発明は、ボール接合強度が良好でかつ導ｍ性が良好な
鋼リードワイヤーを提供することを目的とする。An object of the present invention is to provide a steel lead wire with good ball joint strength and good conductivity.

〔発明の概要〕[Summary of the invention]

本発明者らＣ：、ボンデインクワイヤーについて鋭意イ
υｆ究した結果、ボンディング強度の低下は、主に形成
されたボール中のガスにより生じることを見い出した。The inventors of the present invention conducted extensive research into bonding ink wires and found that the decrease in bonding strength was mainly caused by gas in the formed ball.

即ち、半導体チップ上にこのボールが圧接された際、カ
スによる空洞が接合部に位置し、。That is, when this ball is pressed onto a semiconductor chip, a cavity due to the debris is located at the joint.

接合強度を低下させること及びこの現象は詩に鋼線で発
生しやすいことを見い出した。It was found that this phenomenon reduces the joint strength and is more likely to occur in steel wires.

本発明は、これらの知見をもとに完成されたものである
。　゛ 本発明は、ＨＦ３　＋　Ｓ　ｎ　＋　Ｚ　ｎ　ｒ　ｌ　
ｒ　ｒ　Ａ　ｇＣｒ及びＦｅから選択された１植又は２
独以上の元素を０．００１重社％以上、０，１重量％未
７＋ｉ４含有し、残部が実質的に鋼であるボンディング
ワイヤーを提供する。The present invention was completed based on these findings.゛The present invention is based on HF3 + S n + Z n r l
r r A One or two plants selected from gCr and Fe
To provide a bonding wire containing 0.001% or more of elements of 0.001% or more by weight, 0.1% by weight, and the balance being substantially steel.

即ち、これら添加元素は、合金中のＨ，、Ｏ。That is, these additive elements are H, and O in the alloy.

Ｎ、Ｃを＆！！１定し、Ｎ２．Ｏ□、Ｎ２及びＣＯガス
の発生を抑制する。N, C &! ! 1, N2. Suppresses the generation of O□, N2 and CO gas.

しかし、これらの添加量が多すぎると、導電性を低下さ
せ、−力受なすぎると、効果が生じにくい、したがって
、上記添加元素の成分範囲は０．００１〜０．１重ｔｙ
％未前、更には０．０１〜０．０５重量％が好ましい。However, if the amount of these additives is too large, the conductivity decreases, and if the amount of addition is too low, the effect is difficult to produce. Therefore, the component range of the above additive elements is 0.001 to 0.1%
%, more preferably 0.01 to 0.05% by weight.

上記添加元素のうぢでも、Ａ　ｇ　、　Ｚ　ｒ及びＣｒ
は、導電性をあまり低下させず、ガス発生防止効果が商
い。しかし、こｎ、らの徐刀口景も多すぎると、導電性
を低下させ、−力受なすきると、効果が生じにくい。し
たがって、その成分範囲は０．００５〜０．０８重±１
４％、史には０００７〜０．０５重量％が好才しい。Among the above additive elements, A g , Z r and Cr
does not significantly reduce conductivity and is effective in preventing gas generation. However, if there are too many of these effects, the conductivity will be reduced, and if the force is not absorbed, it will be difficult to produce an effect. Therefore, its component range is 0.005 to 0.08 times ±1
4%, preferably 0.0007 to 0.05% by weight.

なお、本発明のワイヤーは被覆されて使用されてもよい
。Note that the wire of the present invention may be used in a coated state.

以上述べたワイヤーの製造方法を次に述べる。まず、成
分元素を添加して溶解鋳造してインゴットｆＫ８、次に
このインボラトラ７００〜８００°Ｃで熱間加工し、そ
の後９００〜９６０℃で熱処理し、急冷後、６０％以上
の冷間加工を施し、４００〜６００℃で熱処理を施す。A method for manufacturing the wire described above will be described next. First, component elements are added and melted and cast to make an ingot fK8. Next, this ingot is hot worked at 700 to 800°C, then heat treated at 900 to 960°C, and after quenching, it is cold worked by 60% or more. and heat treatment at 400-600°C.

それにより、所望のワイヤーか得られる。Thereby, the desired wire can be obtained.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例について説明する。第１表にボす成分の
リードワイヤーを製造し、その特１クトとして、導電性
、初期ボール硬度、ワイ−１＝−の伸び、ワイヤー強度
、ボール接合強度及びボール形成性を測定した。Examples of the present invention will be described. Lead wires having the components shown in Table 1 were manufactured, and their characteristics were measured for electrical conductivity, initial ball hardness, elongation of Wire 1=-, wire strength, ball bonding strength, and ball formability.

初期ボール硬度は、ボール圧着時の硬度をいい、Ｉｒ１
．ｉ　１（Ｊ−が低いほど、圧着性は良好となる。Initial ball hardness refers to the hardness at the time of ball compression, and is Ir1
．． The lower i1(J- is, the better the pressure bonding property is.

又、ワイヤーの伸びは、ワイヤーが破断する迄の伸びを
いい、伸びが太きいはと、断線率が低い。Also, the elongation of a wire refers to the elongation of the wire until it breaks, and the thicker the elongation, the lower the wire breakage rate.

又、ボール接合強度は、熱圧着されているリードワイヤ
ーの接合部に、つり針状のカギをかけ、真横に引っばっ
て、接合部をせん断破壊させるまでの荷重（ｇｆ）を測
定することにより、得られる。In addition, the ball joint strength is measured by placing a hook-like key on the joint of the lead wires that are thermocompressed, pulling it straight sideways, and measuring the load (gf) until the joint breaks due to shearing. ,can get.

又、ボール形成性は、ワイヤーの先端がボール状に溶融
した際、酸比するかどうか、空洞ができるかどうか、ボ
ールの径のバラツキが大きいか小さいかという事を測定
するこきにより、判断される。In addition, ball-forming properties are judged by measuring whether the tip of the wire melts into a ball, whether the acid ratio is high, whether cavities are formed, and whether the variation in the diameter of the ball is large or small. Ru.

まず、導電性に関しては、実施例（１）〜（５）及び比
較例（１）がＡｕ線より高い導電性を示し、極めて有用
である。First, regarding conductivity, Examples (1) to (5) and Comparative Example (1) exhibit higher conductivity than Au wires, and are extremely useful.

又、初期ボール硬度に関しては、実施例（１）〜（５）
及び比較例（４）がビッカース硬度９０以下を示し、実
用的である。Regarding the initial ball hardness, Examples (1) to (5)
and Comparative Example (4) showed a Vickers hardness of 90 or less, which is practical.

又、ワイヤーの伸びに関しては、実施例（１）〜（５）
及び比較例（１１、＋３１がＡｕ線より大きい伸びを示
し、有用である。In addition, regarding the elongation of the wire, Examples (1) to (5)
and Comparative Example (11, +31 shows greater elongation than the Au wire and is useful.

又、ワイヤー強度に関しては、実施例（１）〜（５）及
び比較例（１）〜（３）がＡ　ｕ　＠より大きい強度を
示し、有用である。Moreover, regarding the wire strength, Examples (1) to (5) and Comparative Examples (1) to (3) show a strength greater than A u @ and are useful.

又、ボール接合強度に関して、実施例（１）〜（５）及
び比較例（２）〜（４）は、接合強度が６５　（＃ｆ）
以上あり、実用的である。Regarding ball joint strength, Examples (1) to (5) and Comparative Examples (2) to (4) have a joint strength of 65 (#f).
There is more than that, and it is practical.

又、ボール形成性は、すべて良好である。In addition, all ball forming properties were good.

以上の各特性を総合的に考慮すると、本発明の実施例＋
１）〜（５）は比較例（１）〜（４）に比べて、優れて
いる。Comprehensively considering each of the above characteristics, the embodiment of the present invention +
Examples 1) to (5) are superior to comparative examples (1) to (4).

以下余白 〔発明の効果〕 本発明は、Ｂ　ｅ　＋　Ｓ　ｎ　＊　Ｚ　ｎ　、　Ｚ　
ｒ　＋　Ａ　ｇＱｒ及びＦθから選択された１種又は２
独以上の元二・：、を０００１重俵％以。ヒ、０．１重
′ｒ１十％未びく含有さぜることにより、ポール接合強
度が良好でかｐ心電性が良好な銅系リードワイヤーをに
ｌ、′：供できる。The following margins [Effects of the invention] The present invention is based on B e + S n * Z n , Z
r + A one or two selected from gQr and Fθ
More than Germany: 0001% of heavy bales. By mixing as much as 0.1% by 10%, a copper-based lead wire with good pole bonding strength and electrocardiographic properties can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

図面ｄ゛、半傅体薯ξ子の一部切り欠き斜視１シ１であ
る。 １　半導体チップ ２　リードフィンガー ３−ポンディングワイヤー ４・・Ｊ＜ｉ＃脂上モールDrawing d is a partially cutaway perspective view of a half-shaped body. 1 Semiconductor chip 2 Lead finger 3 - Ponding wire 4...J<i# Greasy molding

Claims (2)

【特許請求の範囲】[Claims] （１）Ｂｅ、Ｓｎ、Ｚｎ、Ｚｒ、Ａｇ、Ｃｒ及びＦｅか
ら選択された１種又は２種以上の元素を０．００１重量
％以上、０．１重量％未満含有し、残部が実質的に銅で
あるボンディングワイヤー。(1) Contains 0.001% by weight or more and less than 0.1% by weight of one or more elements selected from Be, Sn, Zn, Zr, Ag, Cr, and Fe, and the remainder is substantially Bonding wire that is copper. （２）Ａｇ、Ｃｒ及びＺｒから選択された１種又は２種
以上の元素を０．００５〜０．０８重量％含有し、残部
が実質的に銅である特許請求の範囲第１項に記載のボン
ディングワイヤー。(2) Contains 0.005 to 0.08% by weight of one or more elements selected from Ag, Cr and Zr, with the remainder being substantially copper. bonding wire.
JP59139109A 1984-07-06 1984-07-06 Bonding wire Granted JPS6120694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59139109A JPS6120694A (en) 1984-07-06 1984-07-06 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139109A JPS6120694A (en) 1984-07-06 1984-07-06 Bonding wire

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6117403A Division JPH07138679A (en) 1994-05-09 1994-05-09 Bonding wire
JP6117381A Division JPH07138678A (en) 1994-05-09 1994-05-09 Semiconductor

Publications (2)

Publication Number Publication Date
JPS6120694A true JPS6120694A (en) 1986-01-29
JPH0520494B2 JPH0520494B2 (en) 1993-03-19

Family

ID=15237693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139109A Granted JPS6120694A (en) 1984-07-06 1984-07-06 Bonding wire

Country Status (1)

Country Link
JP (1) JPS6120694A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199646A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor device
JPS6199645A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper alloy for bonding of semiconductor device
JPS61113740A (en) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk Bonding use copper wire of semiconductor element
JPS6321841A (en) * 1986-07-16 1988-01-29 Toshiba Corp Semiconductor device
JPH02243733A (en) * 1989-03-15 1990-09-27 Fujikura Ltd Copper alloy wire rod
JPH0441920A (en) * 1990-06-05 1992-02-12 Aisin Chem Co Ltd Mounting structure of coupling fan
JPH0441919A (en) * 1990-06-05 1992-02-12 Aisin Chem Co Ltd Mounting structure of coupling fan
CN103137235A (en) * 2011-12-01 2013-06-05 贺利氏材料科技公司 Secondary alloyed 1N copper wires for bonding in microelectronics devices
CN103137237A (en) * 2011-12-01 2013-06-05 贺利氏材料科技公司 3N copper wires with trace additions for bonding in microelectronics devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199646A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor device
JPS6199645A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper alloy for bonding of semiconductor device
JPS61113740A (en) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk Bonding use copper wire of semiconductor element
JPS6321841A (en) * 1986-07-16 1988-01-29 Toshiba Corp Semiconductor device
JPH02243733A (en) * 1989-03-15 1990-09-27 Fujikura Ltd Copper alloy wire rod
JPH0477060B2 (en) * 1989-03-15 1992-12-07 Fujikura Ltd
JPH0441920A (en) * 1990-06-05 1992-02-12 Aisin Chem Co Ltd Mounting structure of coupling fan
JPH0441919A (en) * 1990-06-05 1992-02-12 Aisin Chem Co Ltd Mounting structure of coupling fan
CN103137235A (en) * 2011-12-01 2013-06-05 贺利氏材料科技公司 Secondary alloyed 1N copper wires for bonding in microelectronics devices
CN103137237A (en) * 2011-12-01 2013-06-05 贺利氏材料科技公司 3N copper wires with trace additions for bonding in microelectronics devices

Also Published As

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JPH0520494B2 (en) 1993-03-19

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