JPH07138678A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPH07138678A
JPH07138678A JP6117381A JP11738194A JPH07138678A JP H07138678 A JPH07138678 A JP H07138678A JP 6117381 A JP6117381 A JP 6117381A JP 11738194 A JP11738194 A JP 11738194A JP H07138678 A JPH07138678 A JP H07138678A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
semiconductor device
ball
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6117381A
Other languages
Japanese (ja)
Inventor
Shigemi Yamane
茂美 山根
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
鉄男 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6117381A priority Critical patent/JPH07138678A/en
Publication of JPH07138678A publication Critical patent/JPH07138678A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To provide the semiconductor having high reliability by using a copper-based bonding wire having good ball joint strength and electrical conductivity. CONSTITUTION:The first semiconductor consists of >=0.001 to <0.1wt.% one or two kinds of elements Zn and Fe and the balance copper. The second semiconductor consists of one or two kinds of the elements Zn and Fe, further contains one or >=2 kinds of elements among Be, Sn, Zr, Ag and Cr at >=0.001 to <0.1wt.% in total contents thereof and the balance copper. The third semiconductor consists of >=0.001 to <0.1wt.% one or >=2 kinds of elements among Be, Sn, Zr, Ag and Cr and the balance copper. In addition, the bonding wire having characteristics of an electric conductivity of 72IACS%, initial ball hardness (Vickers hardness) of <=90%, wire strength of over 18kg/mm<2>, wire elongation of over 4% and ball joint strength of >=65gf and having good ball formability is used.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ボンディングワイヤー
を用いた半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device using a bonding wire.

【０００２】[0002]

【従来の技術】一般に、ＩＣやＬＳＩなどの半導体装置
は、例えば図１に示すように、樹脂モールド４の内部に
おいて、半導体チップ１および半導体装置の外部へ電気
的結線を行うためのリードフィンガ２が設けられてお
り、これらを線径１０〜１００μｍ程度のボンディング
ワイヤー３で結ぶ構造となっている。2. Description of the Related Art Generally, a semiconductor device such as an IC or an LSI has a lead finger 2 for electrically connecting the semiconductor chip 1 and the outside of the semiconductor device inside a resin mold 4 as shown in FIG. Are provided, and these are connected by a bonding wire 3 having a wire diameter of about 10 to 100 μm.

【０００３】このボンディングワイヤー３の接続方法の
一例としては、まずボンディングワイヤーの先端をボー
ル状に加熱溶融させ、次にこのボール状の先端を半導体
チップ１に圧接し、さらに弧を描くようにボンディング
ワイヤー３を延ばし、３００〜３５０℃に加熱されたリ
ードフィンガ２にボンディングワイヤー３の一部を再度
圧接し、切断することにより、半導体チップ１とリード
フィンガ２とを結線するものである。As an example of a method of connecting the bonding wire 3, first, the tip of the bonding wire is heated and melted into a ball shape, and then the ball-shaped tip is pressed against the semiconductor chip 1 to form an arc. The wire 3 is extended, and a part of the bonding wire 3 is pressed against the lead finger 2 heated to 300 to 350 ° C. again and cut to connect the semiconductor chip 1 and the lead finger 2.

【０００４】この種のボンディングワイヤーとしては、
導電性，ワイヤー伸び，ワイヤー強度，半導体チップと
の接合強度（以下「ボール接合強度」という）およびボ
ール形成性が要求されている。As this type of bonding wire,
Conductivity, wire elongation, wire strength, bonding strength with semiconductor chips (hereinafter referred to as "ball bonding strength") and ball formability are required.

【０００５】従来においては、上記ボンディングワイヤ
ーには金線が使用されている。Conventionally, a gold wire is used as the bonding wire.

【０００６】しかし、近年、低価格化および導電性向上
の点から、上記ボンディングワイヤーとして金線に代え
て銅線を用いる試みがなされている。However, in recent years, in order to reduce the cost and improve the conductivity, it has been attempted to use a copper wire as the bonding wire instead of the gold wire.

【０００７】[0007]

【発明が解決しようとする課題】しかし、銅線を用いて
熱圧接を行うと、ボール接合強度が低下する場合があ
り、一方ボール接合強度を改善しようとすると導電性が
低下してしまい、双方の特性を満足する銅ボンディング
ワイヤーは得られていなかった。However, when the copper wire is used for the thermocompression bonding, the ball bonding strength may be lowered, and on the other hand, if the ball bonding strength is attempted to be improved, the conductivity is lowered. No copper bonding wire satisfying the above characteristics was obtained.

【０００８】このため、従来のボンディングワイヤーを
用いて半導体装置の電気的結線を行った半導体装置とし
ての信頼性の低下などの各種の問題を有していた。Therefore, there are various problems such as deterioration in reliability as a semiconductor device in which the conventional bonding wire is used to electrically connect the semiconductor device.

【０００９】本発明は、上記問題点を解決し、ボール接
合強度が良好でかつ導電性が良好な銅系ボンディングワ
イヤーを用い、高い信頼性を有する半導体装置を提供す
ることを目的とする。An object of the present invention is to solve the above problems and to provide a semiconductor device having high reliability by using a copper-based bonding wire having good ball bonding strength and good conductivity.

【００１０】[0010]

【課題を解決するための手段と作用】本発明者らは、ま
ずボンディングワイヤーについて鋭意研究した結果、従
来のボンディングワイヤーのボール接合強度の低下は、
主に形成されたボール中のガスにより生じることを見出
した。[Means and Actions for Solving the Problems] The inventors of the present invention first conducted diligent research on the bonding wire, and found that the ball bonding strength of the conventional bonding wire was reduced.
It was found that this is mainly caused by the gas in the formed ball.

【００１１】すなわち、半導体チップ上にこのボールが
圧接された際、ガスによる空洞が接合部に発生，位置し
てしまい、ボール接合強度を低下させること、およびこ
の現象は特に銅線で発生しやすいことを見出した。That is, when the ball is pressed onto the semiconductor chip, a cavity due to gas is generated and located at the joint portion, which lowers the ball joint strength, and this phenomenon is particularly likely to occur in the copper wire. I found that.

【００１２】本発明は、これらの知見をもとに完成され
たものである。The present invention has been completed based on these findings.

【００１３】本発明の第１の発明の半導体装置は、電気
的結線に、ＺｎおよびＦｅの１種または２種の元素を
０．００１重量％以上，０．１重量％未満含有し、残部
が実質的に銅であるボンディングワイヤーを用いたこと
を特徴とする。In the semiconductor device of the first invention of the present invention, the electrical connection contains one or two elements of Zn and Fe in an amount of 0.001% by weight or more and less than 0.1% by weight, and the balance is It is characterized by using a bonding wire which is substantially copper.

【００１４】また、本発明の第２の発明の半導体装置
は、電気的結線に、ＺｎおよびＦｅの１種または２種の
元素を含有し、さらにＢｅ，Ｓｎ，Ｚｒ，ＡｇおよびＣ
ｒの１種または２種以上の元素を含有し、それらの含有
量の合計が０．００１重量％以上，０．１重量％未満で
あり、残部が実質的に銅であるボンディングワイヤーを
用いたことを特徴とする。The semiconductor device of the second invention of the present invention contains one or two elements of Zn and Fe in the electrical connection, and further comprises Be, Sn, Zr, Ag and C.
A bonding wire containing one or two or more elements of r, the total content of which is 0.001% by weight or more and less than 0.1% by weight, and the balance being substantially copper is used. It is characterized by

【００１５】また、本発明の第３の発明の半導体装置
は、電気的結線に、Ｂｅ，Ｓｎ，Ｚｒ，ＡｇおよびＣｒ
の１種または２種以上の元素を０．００１重量％以上，
０．１重量％未満含有し、残部が実質的に銅であり、か
つ導電率７２ＩＡＣＳ％，初期ボール硬度（ビッカース
硬度）９０以下，ワイヤー強度１８kg／mm2 越え，ワイ
ヤー伸び４％越えおよびボール接合強度６５gf以上の特
性を有し、ボール形成性が良好であるボンディングワイ
ヤーを用いたことを特徴とする。In the semiconductor device of the third invention of the present invention, Be, Sn, Zr, Ag and Cr are electrically connected.
0.001% by weight or more of one or more elements of
Containing less than 0.1% by weight, the balance being substantially copper, conductivity 72IACS%, initial ball hardness (Vickers hardness) 90 or less, wire strength over 18kg / mm 2 , wire elongation over 4% and ball bonding. A bonding wire having a strength of 65 gf or more and good ball-forming property is used.

【００１６】以下に、本発明の組成に関し説明する。The composition of the present invention will be described below.

【００１７】上記本発明の半導体装置に用いられるボン
ディングワイヤーに含有される、ＺｎおよびＦｅの１種
または２種の元素、さらにはＢｅ，Ｓｎ，Ｚｒ，Ａｇお
よびＣｒの１種または２種以上の元素は、合金中のＨ，
Ｏ，Ｎ，Ｃを固定し、Ｈ2 ，Ｏ2 ，Ｎ2 ，ＣＯガスの発
生を抑制するためのものである。One or two elements of Zn and Fe contained in the bonding wire used in the semiconductor device of the present invention, and one or more of Be, Sn, Zr, Ag and Cr. The element is H in the alloy,
It is for fixing O, N, and C and suppressing generation of H 2 , O 2 , N 2 , and CO gas.

【００１８】しかし、これらの含有量が多すぎると導電
性を低下させ、一方少なすぎると効果が生じにくい。こ
のため、上記含有元素の含有量０．００１重量％以上，
０．１重量％未満とした。さらに好ましくは０．０１〜
０．０５重量％である。However, if the content of these is too large, the conductivity is lowered, while if it is too small, the effect is unlikely to occur. Therefore, the content of the above-mentioned contained elements is 0.001% by weight or more,
It was less than 0.1% by weight. More preferably 0.01-
It is 0.05% by weight.

【００１９】上記本発明の半導体装置に使用されるボン
ディングワイヤーの含有元素は、その１種の含有におい
ても従来に比較し特性を向上することができるが、本発
明においてはそれらの元素を２種以上含有することによ
りボンディングワイヤーとして要求される全ての特性に
おいてより優れた特性を得ることが可能となると共に、
それを用いた半導体装置として優れた信頼性を得ること
ができる。The above-mentioned elements contained in the bonding wire used in the semiconductor device of the present invention can be improved in characteristics as compared with the conventional ones even if only one of them is contained, but in the present invention, two kinds of these elements are included. By containing the above, it becomes possible to obtain more excellent characteristics in all the characteristics required as a bonding wire,
Excellent reliability can be obtained as a semiconductor device using the same.

【００２０】なお、本発明の半導体装置に使用されるボ
ンディングワイヤーは、被覆されて使用されても良い。The bonding wire used in the semiconductor device of the present invention may be coated and used.

【００２１】次に、本発明の半導体装置の製造方法の一
例に関し説明する。Next, an example of the method of manufacturing the semiconductor device of the present invention will be described.

【００２２】まず、本発明の半導体装置に使用されるボ
ンディングワイヤーは、成分元素を添加して溶解鋳造し
てインゴットを得る。次いで、このインゴットを７００
〜８００℃で熱間加工し、その後９００〜９６０℃で熱
処理し、急冷後、６０％以上の冷間加工を施し、４００
〜６００℃で熱処理を施す。それにより、本発明の半導
体装置に使用されるボンディングワイヤー、さらには本
発明の第３の発明で規定する特性を有するボンディング
ワイヤーが得られる。First, the bonding wire used in the semiconductor device of the present invention is obtained by adding component elements and melting and casting to obtain an ingot. Then ingot 700
Hot working at ~ 800 ° C, then heat treatment at 900 ~ 960 ° C, quenching, then cold working at 60% or more, 400
Heat treatment is performed at ˜600 ° C. As a result, a bonding wire used in the semiconductor device of the present invention and further a bonding wire having the characteristics defined by the third invention of the present invention can be obtained.

【００２３】そして、上記ボンディングワイヤーを用い
て、常法により半導体装置を製造する。例えば、この半
導体装置としては、少なくとも半導体チップとリードフ
ィンガを有すると共に、前記半導体チップとリードフィ
ンガとの結線に、上記ボンディングワイヤーを用いたも
のであれば良い。Then, using the above bonding wire, a semiconductor device is manufactured by a conventional method. For example, this semiconductor device may have at least a semiconductor chip and a lead finger, and the bonding wire may be used to connect the semiconductor chip and the lead finger.

【００２４】[0024]

【実施例】下記表１に示す成分のボンディングワイヤー
を製造し、その特性として導電性（IACS％），初期ボー
ル硬度（ビッカース硬度），ワイヤー強度（kg／m
m2 ），ワイヤー伸び（％），ボール接合強度（gr），
およびボール形成性を測定した。[Example] A bonding wire having the components shown in Table 1 below was manufactured, and its characteristics were conductivity (IACS%), initial ball hardness (Vickers hardness), and wire strength (kg / m).
m 2 ), wire elongation (%), ball joint strength (gr),
And ball formability was measured.

【００２５】初期ボール硬度は、ボール圧接時の硬度を
いい、硬度が低いほど圧接性は良好となる。The initial ball hardness means the hardness at the time of ball pressure contact, and the lower the hardness, the better the pressure contact property.

【００２６】また、ワイヤー伸びは、ボンディングワイ
ヤーが破断するまでの伸びをいい、伸びが大きいほど破
線率が低い。The wire elongation means the elongation until the bonding wire is broken, and the larger the elongation, the lower the broken line ratio.

【００２７】また、ボール接合強度は、熱圧着されてい
るボンディングワイヤーの接合部に、つり針状のカギを
かけ、真横に引っ張って、接合部をせん断破壊させるま
での加重を測定することにより得られる。The ball bonding strength is obtained by applying a hook-shaped key to the bonding portion of the bonding wire which is thermocompression bonded, pulling it directly to the side, and measuring the load until the bonding portion undergoes shear failure. To be

【００２８】また、ボール形成性は、ボンディングワイ
ヤーの先端がボール状に溶融した際、酸化するかどう
か、空洞ができるかどうか、ボール径のバラツキが大き
いか小さいかということを評価することにより判断され
る。The ball formability is judged by evaluating whether the tip of the bonding wire is oxidized when it is melted into a ball, whether a cavity is formed, and whether the variation in ball diameter is large or small. To be done.

【００２９】[0029]

【表１】 上記表１より、まず導電性に関しては、実施例１〜１２
および比較例１がＡｕ線より高い導電率を示し、非常に
有効である。[Table 1] From Table 1 above, first, regarding conductivity, Examples 1 to 12 were used.
In addition, Comparative Example 1 exhibits higher conductivity than the Au wire and is very effective.

【００３０】また、初期ボール硬度に関しては、実施例
１〜１２および比較例１，５がビッカース硬度９０以下
を示し、実用的である。Regarding the initial ball hardness, Examples 1 to 12 and Comparative Examples 1 and 5 show Vickers hardness of 90 or less and are practical.

【００３１】また、ワイヤー強度に関しては、実施例１
〜１２および比較例１〜４がＡｕ線と同等あるいはそれ
より大きい強度を示し、有用である。Regarding the wire strength, Example 1
.About.12 and Comparative Examples 1 to 4 are useful because they show strength equal to or higher than that of Au wire.

【００３２】また、ワイヤー伸びに関しては、実施例１
〜１２および比較例１，３がＡｕ線より大きい伸びを示
し、有用である。Regarding wire elongation, Example 1
.About.12 and Comparative Examples 1 and 3 exhibit elongations larger than the Au line and are useful.

【００３３】また、ボール接合強度に関しては、実施例
１〜１２および比較例２，３，５がボール接合強度６５
gr以上であり、実用的である。Regarding the ball bonding strength, Examples 1 to 12 and Comparative Examples 2, 3 and 5 have a ball bonding strength of 65.
It is more than gr and practical.

【００３４】また、ボール形成性に関しては、比較例４
以外は全て良好である。Regarding the ball formability, Comparative Example 4
Everything is good except for.

【００３５】以上の各特性を総合的に考慮すると、本発
明の実施例１〜１２は比較例１〜５に比べて優れてい
る。Considering each of the above characteristics comprehensively, Examples 1 to 12 of the present invention are superior to Comparative Examples 1 to 5.

【００３６】そして、半導体チップとリードフィンガを
有する半導体装置の半導体チップとリードフィンガとの
結線に、上記優れた特性を有するボンディングワイヤー
を用いたところ、信頼性の高い半導体装置を得ることが
できた。When a bonding wire having the above-mentioned excellent characteristics is used for connecting the semiconductor chip and the lead finger of the semiconductor device having the semiconductor chip and the lead finger, a highly reliable semiconductor device can be obtained. .

【００３７】[0037]

【発明の効果】本発明は、ボール接合強度が良好でかつ
導電性が良好な銅系ボンディングワイヤーを用い、高い
信頼性を有する半導体装置を提供することができる。The present invention can provide a semiconductor device having high reliability by using a copper-based bonding wire having a good ball bonding strength and a good conductivity.

【図面の簡単な説明】[Brief description of drawings]

【図１】半導体装置の一部切り欠き斜視図。FIG. 1 is a partially cutaway perspective view of a semiconductor device.

【符号の説明】[Explanation of symbols]

１…半導体チップ ２…リードフィンガー ３…ボンディングワイヤー ４…樹脂モールド 1 ... Semiconductor chip 2 ... Lead finger 3 ... Bonding wire 4 ... Resin mold

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 電気的結線に、ＺｎおよびＦｅの１種ま
たは２種の元素を０．００１重量％以上，０．１重量％
未満含有し、残部が実質的に銅であるボンディングワイ
ヤーを用いたことを特徴とする半導体装置。1. One or two elements of Zn and Fe in an electrical connection of 0.001% by weight or more and 0.1% by weight
A semiconductor device comprising a bonding wire containing less than less than the remainder, and the balance being substantially copper. 【請求項２】 電気的結線に、ＺｎおよびＦｅの１種ま
たは２種の元素を含有し、さらにＢｅ，Ｓｎ，Ｚｒ，Ａ
ｇおよびＣｒの１種または２種以上の元素を含有し、そ
れらの含有量の合計が０．００１重量％以上，０．１重
量％未満であり、残部が実質的に銅であるボンディング
ワイヤーを用いたことを特徴とする半導体装置。2. The electrical connection contains one or two elements of Zn and Fe, and further comprises Be, Sn, Zr, A.
A bonding wire containing one or more elements of g and Cr, the total content of which is 0.001% by weight or more and less than 0.1% by weight, and the balance being substantially copper. A semiconductor device characterized by being used. 【請求項３】 電気的結線に、Ｂｅ，Ｓｎ，Ｚｒ，Ａｇ
およびＣｒの１種または２種以上の元素を０．００１重
量％以上，０．１重量％未満含有し、残部が実質的に銅
であり、かつ導電率７２ＩＡＣＳ％，初期ボール硬度
（ビッカース硬度）９０以下，ワイヤー強度１８kg／mm
2 越え，ワイヤー伸び４％越えおよびボール接合強度６
５gf以上の特性を有し、ボール形成性が良好であるボン
ディングワイヤーを用いたことを特徴とする半導体装
置。3. Be, Sn, Zr, Ag for electrical connection
And 0.001% by weight or more and less than 0.1% by weight of one or more elements of Cr, the balance being substantially copper, and conductivity 72IACS%, initial ball hardness (Vickers hardness). 90 or less, wire strength 18kg / mm
2 over, wire elongation over 4% and ball bonding strength 6
A semiconductor device comprising a bonding wire having a characteristic of 5 gf or more and having a good ball forming property. 【請求項４】 半導体装置は、少なくとも半導体チップ
とリードフィンガを有すると共に、前記半導体チップと
リードフィンガとの結線に、ボンディングワイヤーを用
いたものである請求項１乃至請求項３記載の半導体装
置。4. The semiconductor device according to claim 1, wherein the semiconductor device has at least a semiconductor chip and a lead finger, and a bonding wire is used to connect the semiconductor chip and the lead finger.
JP6117381A 1994-05-09 1994-05-09 Semiconductor Pending JPH07138678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6117381A JPH07138678A (en) 1994-05-09 1994-05-09 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6117381A JPH07138678A (en) 1994-05-09 1994-05-09 Semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59139109A Division JPS6120694A (en) 1984-07-06 1984-07-06 Bonding wire

Publications (1)

Publication Number Publication Date
JPH07138678A true JPH07138678A (en) 1995-05-30

Family

ID=14710248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6117381A Pending JPH07138678A (en) 1994-05-09 1994-05-09 Semiconductor

Country Status (1)

Country Link
JP (1) JPH07138678A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105981164A (en) * 2015-07-23 2016-09-28 日铁住金新材料股份有限公司 Bonding wire for semiconductor device
EP3147938A1 (en) * 2015-07-23 2017-03-29 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124972A (en) * 1978-03-23 1979-09-28 Tamagawa Kikai Kinzoku Kk Semiconductor lead material
JPS58130549A (en) * 1982-01-29 1983-08-04 Furukawa Electric Co Ltd:The Copper alloy for lead material of semiconductor equipment
JPH0520494A (en) * 1991-07-11 1993-01-29 Hitachi Ltd Recognizing/displaying method for attribute of business form

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124972A (en) * 1978-03-23 1979-09-28 Tamagawa Kikai Kinzoku Kk Semiconductor lead material
JPS58130549A (en) * 1982-01-29 1983-08-04 Furukawa Electric Co Ltd:The Copper alloy for lead material of semiconductor equipment
JPH0520494A (en) * 1991-07-11 1993-01-29 Hitachi Ltd Recognizing/displaying method for attribute of business form

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
CN105981164A (en) * 2015-07-23 2016-09-28 日铁住金新材料股份有限公司 Bonding wire for semiconductor device
EP3147938A1 (en) * 2015-07-23 2017-03-29 Nippon Micrometal Corporation Bonding wire for semiconductor device
EP3147938A4 (en) * 2015-07-23 2017-06-14 Nippon Micrometal Corporation Bonding wire for semiconductor device
EP3136435A4 (en) * 2015-07-23 2017-07-26 Nippon Micrometal Corporation Bonding wire for semiconductor device
US9773748B2 (en) 2015-07-23 2017-09-26 Nippon Micrometal Corporation Bonding wire for semiconductor device
CN105981164B (en) * 2015-07-23 2019-10-25 日铁新材料股份有限公司 Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device

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