JPS6120518B2 - - Google Patents

Info

Publication number: JPS6120518B2
Authority: JP; Japan
Prior art keywords: silicon; substrate; silicon carbide; layer; carbon
Prior art date: 1979-05-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP5613279A

Other languages

English (en)

Japanese (ja)

Other versions

JPS55149196A (en

Inventor

Toshiki Inooku

Takeshi Sakurai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-05-07

Filing date

1979-05-07

Publication date

1986-05-22

1979-05-07 Application filed by Sharp Corp filed Critical Sharp Corp

1979-05-07 Priority to JP5613279A priority Critical patent/JPS55149196A/ja

1980-11-20 Publication of JPS55149196A publication Critical patent/JPS55149196A/ja

1986-05-22 Publication of JPS6120518B2 publication Critical patent/JPS6120518B2/ja

Status Granted legal-status Critical Current

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
229910052710 silicon Inorganic materials 0.000 claims description 31
239000010703 silicon Substances 0.000 claims description 31
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
229910010271 silicon carbide Inorganic materials 0.000 claims description 25
239000000758 substrate Substances 0.000 claims description 25
229910052799 carbon Inorganic materials 0.000 claims description 23
239000013078 crystal Substances 0.000 claims description 8
238000004519 manufacturing process Methods 0.000 claims description 5
230000008018 melting Effects 0.000 claims description 5
238000002844 melting Methods 0.000 claims description 5
230000015572 biosynthetic process Effects 0.000 claims 1
238000000034 method Methods 0.000 description 15
239000002994 raw material Substances 0.000 description 8
ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
239000007789 gas Substances 0.000 description 6
239000007791 liquid phase Substances 0.000 description 5
239000004065 semiconductor Substances 0.000 description 5
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
239000012159 carrier gas Substances 0.000 description 3
239000001257 hydrogen Substances 0.000 description 3
229910052739 hydrogen Inorganic materials 0.000 description 3
239000001294 propane Substances 0.000 description 3
229910000077 silane Inorganic materials 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
238000000407 epitaxy Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
230000006698 induction Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910003902 SiCl 4 Inorganic materials 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000003575 carbonaceous material Substances 0.000 description 1
238000003763 carbonization Methods 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
229930195733 hydrocarbon Natural products 0.000 description 1
150000002430 hydrocarbons Chemical class 0.000 description 1
150000002431 hydrogen Chemical group 0.000 description 1
229910000041 hydrogen chloride Inorganic materials 0.000 description 1
IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
238000005470 impregnation Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000003475 lamination Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000005049 silicon tetrachloride Substances 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1
239000002912 waste gas Substances 0.000 description 1

Landscapes

Recrystallisation Techniques (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

JP5613279A 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149196A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP5613279A JPS55149196A (en)	1979-05-07	1979-05-07	Manufacture of silicon carbide substrate

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP5613279A JPS55149196A (en)	1979-05-07	1979-05-07	Manufacture of silicon carbide substrate

Publications (2)

Publication Number	Publication Date
JPS55149196A JPS55149196A (en)	1980-11-20
JPS6120518B2 true JPS6120518B2 (ru)	1986-05-22

Family

ID=13018543

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP5613279A Granted JPS55149196A (en)	1979-05-07	1979-05-07	Manufacture of silicon carbide substrate

Country Status (1)

Country	Link
JP (1)	JPS55149196A (ru)

1979
- 1979-05-07 JP JP5613279A patent/JPS55149196A/ja active Granted

Also Published As

Publication number	Publication date
JPS55149196A (en)	1980-11-20

Publication	Publication Date	Title
US4623425A (en)	1986-11-18	Method of fabricating single-crystal substrates of silicon carbide
US3956032A (en)	1976-05-11	Process for fabricating SiC semiconductor devices
JPH01162326A (ja)	1989-06-26	β−炭化シリコン層の製造方法
JPH06216050A (ja)	1994-08-05	単結晶炭化ケイ素層を有するウエーハの製造方法
JP2006117512A (ja)	2006-05-11	炭化珪素単結晶の製造方法とその方法によって成長した炭化珪素単結晶、単結晶インゴットおよび炭化珪素単結晶ウエーハ
JPS5838399B2 (ja)	1983-08-23	炭化珪素結晶層の製造方法
JPS6120514B2 (ru)	1986-05-22
JPH06219898A (ja)	1994-08-09	ｎ型炭化珪素単結晶の製造方法
JP3322740B2 (ja)	2002-09-09	半導体基板およびその製造方法
JPS6152120B2 (ru)	1986-11-12
US3340110A (en)	1967-09-05	Method for producing semiconductor devices
JPS6120518B2 (ru)	1986-05-22
JPS6120519B2 (ru)	1986-05-22
JPS6045159B2 (ja)	1985-10-08	炭化珪素結晶層の製造方法
JPS6152119B2 (ru)	1986-11-12
JPS6120517B2 (ru)	1986-05-22
JPS63283014A (ja)	1988-11-18	炭化珪素半導体素子
JPS6121197B2 (ru)	1986-05-26
JPS6121198B2 (ru)	1986-05-26
JPS623119B2 (ru)	1987-01-23
JPS5838400B2 (ja)	1983-08-23	炭化珪素結晶層の製造方法
JPS6120516B2 (ru)	1986-05-22
JPS626644B2 (ru)	1987-02-12
JPS6115150B2 (ru)	1986-04-22
JPS6120520B2 (ru)	1986-05-22