JPS61204987A - Semiconductor light emitting and receiving device - Google Patents
Semiconductor light emitting and receiving deviceInfo
- Publication number
- JPS61204987A JPS61204987A JP60045796A JP4579685A JPS61204987A JP S61204987 A JPS61204987 A JP S61204987A JP 60045796 A JP60045796 A JP 60045796A JP 4579685 A JP4579685 A JP 4579685A JP S61204987 A JPS61204987 A JP S61204987A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- light
- light emitting
- wavelength
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 215
- 239000000758 substrate Substances 0.000 claims description 18
- 239000013307 optical fiber Substances 0.000 abstract description 40
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 239000004020 conductor Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007175 bidirectional communication Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
Landscapes
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、第１（Ｊ：たは第２）の波長をイｊする光を
、光フッ・−イバを用いて他の位置に迄信さｔ！、得る
ように、発光させイイがら、それと同時に、第２（また
は第１）の波長をイＪす゛る光を、光ノアイバを用いて
他の位置から受信させ（ｑるように、受光させることが
できる、という半導体弁°受光装瞠に関Ｊ−る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to transmitting light having a first (or second) wavelength to another location using an optical fiber. T! It is possible to emit light at a second (or first) wavelength so as to obtain a signal, and at the same time receive light at a second (or first) wavelength from another position using an optical fiber. It is related to semiconductor valves and light-receiving devices.
彰米辺−文共
従来、第１（または第２）の波長をイｉりる光を、゛光
ファイバを用い′Ｃ他の位置に送信さけ得るように、発
光さｉ！ながら、でれど同時に、第２（または第１）の
波長を有する光を、光フ？イバを用いて伯の位置から受
信させ得るように、受光ざゼることができる、という実
用的な゛４４導体発受光装置の提案はみられていない。Conventionally, light emitted at a first (or second) wavelength is emitted so that it can be transmitted to another location using an optical fiber. However, at the same time, light having a second (or first) wavelength is transmitted to the light beam? There have been no proposals for a practical 44-conductor light emitting/receiving device that can receive light so that it can be received from a remote location using a wire.
、ｌが ゛しようとする問題点
このため、第１（または第２）の波長を有する光を、光
ファイバを用いて他の位置に送信させ得るように、発光
させながら、それと同時に、第２（また【よ第１）の波
長を右す゛る光を、光フッフィバを用いて他の位置から
受信ざｔ！冑るＪ、うに、災児させる場合、従来は、第
１（または第２）の波長を右Ｊる光を、光ファイバを用
いて他の位置に送信さＢｑるよ）に、発光させ得る゛ｒ
々体発光発光装置第２（または第１）の波長を右４る光
を、光ファイバを用いて他の位置から受信させ（ｑるよ
うに、受光さＶ（りる半導体受光装置とを必要としてい
た。Therefore, while emitting light having a first (or second) wavelength so that it can be transmitted to another location using an optical fiber, at the same time (Also, light having the right wavelength of [first] is received from another position using an optical fiber! Conventionally, in order to make a fire, light having a first (or second) wavelength can be emitted using an optical fiber and transmitted to another location.゛r
Receives light with the wavelength of the second (or first) light emitting device from another position using an optical fiber (requires a semiconductor light receiving device to receive the light). It was.
このため、従来は、第１（または第２）の波長を有する
光を、光ファイバを用いて他の位置に送イΔさぜ（ｑる
ように、発光さゼながら、それと同時に、第２（または
第１）の波長を有する光を、光ファイバを用いて他の位
置から受信させ（ｑるように、受光させるための装置が
、全体として、大型、高価になる、などの欠点を有して
いた。For this reason, conventionally, light having a first (or second) wavelength is transmitted to another location using an optical fiber, and at the same time the light emitted from the second wavelength is emitted. (or the first) wavelength is received from another position using an optical fiber. Was.
また、従来は、上述した半導体発光装置と、上述した半
導体受光装置とを用いて、第１（または第２）の波長を
右する光を、光ファイバを用い他の位置に送信さｌ！冑
るにうに、発光させながら、それと同時に、第２（また
は第１）の波長を右する光を、光ファイバを用いて他の
位置から受信さぜ１ｑるように、受光させることができ
るとしても、上述した半導体発光装置から発光して得ら
れる第１（または第２）の波長を有する光を光ファイバ
を用いて他の位置に送信さＶｌまた、光ファイバを用い
て、第２（または第１）の波長を右する光を、他の位置
から、上述した半導体受光装置に受信させる場合、送信
用の光ファイバと、受信用の光ファイバとを必要とづる
か、または送受信用の光ファイバと、ぞの送受信用の光
ファイバと、上述した半導体発光装置と上述した半導体
受光装置どのそれぞれどの間の２つの光結合路とを必要
とし−Ｃいた。Furthermore, conventionally, the above-described semiconductor light emitting device and the above-described semiconductor light receiving device are used to transmit light having a first (or second) wavelength to another location using an optical fiber. Suppose that it is possible to emit light while simultaneously receiving light of the second (or first) wavelength from another position using an optical fiber. Also, the light having the first (or second) wavelength obtained by emitting light from the semiconductor light emitting device described above is transmitted to another position using an optical fiber. When the above-mentioned semiconductor light receiving device receives light having the wavelength of the first) from another position, an optical fiber for transmission and an optical fiber for reception are required, or an optical fiber for transmission and reception is required. A fiber, an optical fiber for transmission and reception, and two optical coupling paths between each of the semiconductor light emitting device described above and the semiconductor light receiving device described above are required.
このため、従来は、第１（または第２）の波長を有する
光を、光ファイバを用いて他の位置（＝送信さ１！得る
ように、発光させながら、それと同時に、第２（またｔ
よ第１）の波長を４−Ｊユる＊ Ａ−’Ａ’ ”’７−
ｙ Ｊ ｒｃ ＜−８１１，） Ｔ Ａｈ山Ｊｉ’ｙ
讐７＋Ｉ Ｉ：’、 ’、＠ノ＝Ａせるようにし、イし
て、第１（または第２）の波長を右ザる光を、光ファイ
バを用いて他の位置に送信させ、また、光ファイバを用
いて他の位置から、第２（または第１）の波長を有する
光を受信させるようにするための装置が、仝休として、
大型、高価になる、などの欠点を有していた。For this reason, conventionally, light having a first (or second) wavelength is emitted using an optical fiber so as to be transmitted to another position (=transmitted 1!), and at the same time, light having a second (or t
The wavelength of 1st) is 4-J* A-'A'”'7-
y J rc <-811,) T Ah mountain Ji'y
7+I I:', ', @ノ=A, then the light having the first (or second) wavelength is transmitted to another position using an optical fiber, and A device for receiving light having a second (or first) wavelength from another location using an optical fiber, as a leave of absence,
It had drawbacks such as being large and expensive.
問題を解決するためコ
よって、本発明は、上述した欠点なしに、第１（または
第２）の波長を有する光を、光ファイバを用いて使の位
置に送信させ得るように、発光させながら、それと同時
に、第２（または第１）の波長を右する光を、光ファイ
バを用いて他の位置から受信さ仕るように、受光するこ
とができ、しかも、上述した欠点なしに、第１（または
第２）の波長を有する光を、送受信用の光ファイバを用
いて他の位置に送信させ、また、その送受信用の光ファ
イバを用いて、他の位置から、第２（または第１）の波
長を有する光を受信させることができる、という新ｍな
半導体発受光装置を提案せんとするものである。SUMMARY OF THE INVENTION In order to solve the problem, the present invention provides a method for emitting light having a first (or second) wavelength so that it can be transmitted to a location of use using an optical fiber, without the drawbacks mentioned above. , and at the same time light at the second (or first) wavelength can be received from another location using an optical fiber, and without the drawbacks mentioned above. Light having a first (or second) wavelength is transmitted to another location using an optical fiber for transmission and reception, and light having a first (or second) wavelength is transmitted from another location using an optical fiber for transmission and reception. The purpose of this paper is to propose a new semiconductor light emitting/receiving device that can receive light having a wavelength of 1).
本発明による半導体発受光装δは、半導体活性層をそれ
ぞれ含み且つ互に同じ積層構造を有する第１、第２及び
第３の半導体積層体が、それらの順に並置して、それら
に共通の半導体基板上に形成され、また、上記第１、第
２及び第３の半導体積層体上に、第１、第２及び第３の
電極がぞれぞれ付され、さらに、上記半導体基板に、上
記第１、第２及び第３の電極に対して共通な共通電極が
付されている構成を有し、そして、この場合、上記第１
の半導体積層体の半導体活性層が、上記第２の半導体積
層体の半導体活性層に比し狭いエネルギバンドギャップ
を有し、また、上記Ｗｉ２の半導体８１層体の半導体活
性層が、上記第３の半導体積層体の半導体活性層に比し
狭いエネルギバンドギャップを有し、よって、上記半導
体基板と、上記第１の半導体積層体と、上記第１の電極
と、上記共通電極とで、上記第１の半導体積層体の半導
体活性層のエネルギバンドギャップによって決められた
第１の波長を有する光を発光または受光し得る第１の半
導体発受光素子が構成され、また、上記半導体基板と、
上記第２の半導体積層体と、上記第２の電極と、上記共
通電極とで、上記第２の半導体積層体の半導体活性層の
エネルギバンドギャップブによって決められた上記第１
の波長に比し短い第２の波長を有する光を発光または受
光し得る第２の半導体発受光素子が構成され、さらに、
上記半導体基板と、上記第３の半導体積層体と、上記第
３の電極と、上記共通電極とで、上記第３の半導体積層
体の半導体活性層のエネルギバンドギャップによって決
められた上記第２の波長に比し短い第３の波長を有する
光を発光または受光し得る第３の半導体発受光素子が構
成されている、という構成を有する。In the semiconductor light emitting/receiving device δ according to the present invention, first, second, and third semiconductor stacked bodies each including a semiconductor active layer and having the same stacked structure are juxtaposed in that order, and a semiconductor layer common to them is arranged. are formed on the substrate, and first, second, and third electrodes are respectively attached on the first, second, and third semiconductor laminates, and further, the semiconductor substrate is provided with the above-mentioned electrodes. It has a configuration in which a common electrode is attached to the first, second, and third electrodes, and in this case, the first
The semiconductor active layer of the semiconductor stack has a narrower energy band gap than the semiconductor active layer of the second semiconductor stack, and the semiconductor active layer of the semiconductor 81 layer of Wi2 has a narrower energy band gap than the semiconductor active layer of the second semiconductor stack, and the semiconductor active layer of the semiconductor 81 layer of Wi2 has a narrower energy band gap than the semiconductor active layer of the second semiconductor stack. has a narrower energy band gap than the semiconductor active layer of the semiconductor stack, and therefore, the semiconductor substrate, the first semiconductor stack, the first electrode, and the common electrode have a narrower energy band gap than the semiconductor active layer of the semiconductor stack. A first semiconductor light emitting/receiving element capable of emitting or receiving light having a first wavelength determined by the energy band gap of the semiconductor active layer of the first semiconductor stack is configured, and the semiconductor substrate and
The second semiconductor stack, the second electrode, and the common electrode are connected to the first semiconductor stack, which is determined by the energy band gap of the semiconductor active layer of the second semiconductor stack.
A second semiconductor light emitting/receiving element is configured that can emit or receive light having a second wavelength shorter than the wavelength of
The semiconductor substrate, the third semiconductor laminate, the third electrode, and the common electrode form the second semiconductor layer determined by the energy band gap of the semiconductor active layer of the third semiconductor laminate. It has a configuration in which a third semiconductor light emitting/receiving element is configured that can emit or receive light having a third wavelength shorter than the wavelength.
１−皿
このような構成を有する本４発明による半導体発受光装
置の場合、第１、第２及び第３の半導体発受光素子が、
それらの順に並置して配列されている構成を有する。1-Dish In the case of the semiconductor light emitting/receiving device according to the fourth invention having such a configuration, the first, second and third semiconductor light emitting/receiving elements are
They have a configuration in which they are arranged side by side in that order.
また、第１、第２及び第３の半導体発受光素子のそれぞ
れを構成している第１、第２及び第３の半導体積層体の
半導体活性層のエネルギバンドギャップを、それぞれＥ
ｇ 、Ｅｇ２及びＥＱ３とするとき、それらエネルギバ
ンドギャップＥｇ 、Ｅｇ２及びＥｏ３が、ＥＱ、＜Ｅ
Ｇ ＜ＥＱ３の関係を有する。In addition, the energy band gaps of the semiconductor active layers of the first, second, and third semiconductor stacked bodies constituting the first, second, and third semiconductor light emitting/receiving elements, respectively, are
g, Eg2 and EQ3, the energy band gaps Eg, Eg2 and Eo3 are EQ, <E
It has a relationship of G < EQ3.
さらに、第１、第２及び第３の半導体発受光素子がそれ
ぞれ発光または受光し得る第１、第２及び第３の光を、
それぞれり、Ｌ２及びＬ３とし、そしてそれら光り、ｌ
、２及びＬ３の波長を、それぞれλ 、λ 及びλ３と
するとき、それら波長λ 、λ 及びλ が、λ１〉λ
〉λ３の関係を有する。Furthermore, the first, second, and third lights that can be emitted or received by the first, second, and third semiconductor light emitting/receiving elements, respectively,
L2 and L3 respectively, and their light, l
, 2 and L3 are λ , λ , and λ3, respectively, and the wavelengths λ , λ , and λ are λ1>λ
〉λ3.
このため、いま、第１の半導体発受光素子で波長Ａ１を
有する光Ｌ１を発光させれば、その光り、が第２及び第
３の半導体発受光素子ではとんど吸収されることなしに
、第２及び第３の半導体発受光素子をそれらの順に通っ
て、第１の半導体発受光素子側とは反対側から外部に出
射する。Therefore, if the first semiconductor light emitting/receiving element emits light L1 having the wavelength A1, the light will hardly be absorbed by the second and third semiconductor light emitting/receiving elements. The light passes through the second and third semiconductor light emitting/receiving elements in that order and is emitted to the outside from the side opposite to the first semiconductor light emitting/receiving element.
また、第３の半導体発受光素子の第１の半導体発受光素
子側とは反対側から、Ｆｌの半導体発受光素子側に向け
て波長λ３を有する光Ｌ３を入射させれば、その光し。Further, if the light L3 having the wavelength λ3 is made to enter the semiconductor light emitting/receiving element side of Fl from the side of the third semiconductor light emitting/receiving element opposite to the first semiconductor light emitting/receiving element side, the light will be emitted.
がほとんど第３の半導体発受光素子で吸収され、その結
果、波長λ３を有する光Ｌ３の受光出力が、第３の電極
及び共通電極を介して、出力される。Most of the light is absorbed by the third semiconductor light emitting/receiving element, and as a result, the light receiving output of the light L3 having the wavelength λ3 is outputted via the third electrode and the common electrode.
ざらに、第３の半導体発受光素子で波長λ３を有する光
［３を発光ざＵれば、ぞの光Ｌ３が、第１の半導体発受
光素子側とは反対側から外部に出射する。Roughly speaking, when the third semiconductor light emitting/receiving element emits light [3 having the wavelength λ3, the light L3 is emitted to the outside from the side opposite to the first semiconductor light emitting/receiving element.
この場合、波長λ３を有Ｊる光Ｌ３は、第１の半導体発
受光素子側にも向うが、その先１−３は、第２の半導体
発受光素子でほとんど吸収されるため、第１の半導体発
受光素子にほとんど入射しない。In this case, the light L3 having the wavelength λ3 also goes to the first semiconductor light emitting/receiving element, but most of the light 1-3 beyond that is absorbed by the second semiconductor light emitting/receiving element. Almost no light enters the semiconductor light emitting/receiving element.
また、第３の半導体発受光素子の第１の半導体発受光素
子側とは反対側から、第１の半導体発受光素子側に向け
て、波長λ１を有する光Ｌ３を一人射（キｔ４れば、そ
の先１．が、第３及び第２０Ｙ導体介妥光素ｆでほとん
ど吸収されることイｔしに、第３及び第２の半導体発受
光素子をそれらの順（ご通って、第１の半導体発受光素
子に入射し、そして、そのｆ！１の半導体発受光木了Ｃ
゛吸１ｊ２ｉ″ｆ−れ、子の結宋、波長λ１を右する光
１１の受光出力が、第１の電極及び共通電極を介しＣ出
ツノされる。Further, the light L3 having the wavelength λ1 is emitted from the side of the third semiconductor light emitting/receiving element opposite to the first semiconductor light emitting/receiving element toward the first semiconductor light emitting/receiving element (if , the third and second semiconductor light emitting/receiving elements in that order (passing through the first and the semiconductor light emitting/receiving element of f!1 enters the semiconductor light emitting/receiving element C
The output of the light 11 having the wavelength λ1 is outputted via the first electrode and the common electrode.
勿−一一浬
このため、本発明に６１．るＦ＞４体発受光装置に上れ
ＩＳ、第１（またｔ、ｉ第２）の波長を−ｓｉする光（
１例の場合、波長λ をイｉ′ｔＪ−る光１−．（また
は波長λ を有する光１３））を、光ノアイバを用いて
他の位置に送信さｔ！得るように、発光させ＜ｊがら、
それと同時に、第２（または第１）の波長を右づる光（
上潮の場合、波長λ３を有り−る光Ｌ３ （または波長
λ１を有する光１１））を、光ファイバを用いて他の位
置から受信ｉ＼せ１！′？るＪ、うに、受光さびること
がｒきる。Therefore, the present invention includes 61. F > 4-body light emitting/receiving device IS, the first (also t, i second) wavelength -si light (
In one example, light 1-. with wavelength λ i'tJ-. (or light 13 with wavelength λ)) is transmitted to another location using an optical fiber t! Let it emit light so as to obtain
At the same time, light that shifts the second (or first) wavelength to the right (
In the case of a rising tide, light L3 with wavelength λ3 (or light 11 with wavelength λ1) is received from another location using an optical fiber. ′? However, there is a risk that the light reception will rust.
しかち、この場合、第１（または第２）の波長を（ＪＮ
Ｊる）ｔ（ｌ四の場合、波長λ１を右するλ、１．ＩＮ
１：たｉ、Ｌ波（（λ２を右りる光し３））を、光ファ
イバを用いて曲の位置にｊス信させ、また、尤フトイバ
を用いて、第２（または第１）の波長をｆｉづる光（Ｖ
例の場合、波長λ３を右り−る光Ｌ （または波長λ１
を右する光Ｌ１））を受に′ｊさける場合、送イｆ用の
九ノフ・イバと、受４３用の光ファイバとを必要とりす
、送受信用の１つの光ファイバーひ足り、また、イの送
受信用の１つの尤フ７・、イバとの間に２つの光結合路
を必・川と１！ず、１つの光結合路で・足りる、という
澄れた４５ ｆ？５’を右する。However, in this case, the first (or second) wavelength is (JN
J) t (In the case of l4, λ to the right of wavelength λ1, 1.IN
1: Transmit the L wave ((light beam 3) to the right of λ2) to the position of the song using an optical fiber, and also transmit the second (or first) wave using an optical fiber. Light with a wavelength of fi (V
In the case of the example, the light L having the wavelength λ3 to the right (or the wavelength λ1
When transmitting light L1)) to the receiver, a nine-fold fiber for the transmitter f and an optical fiber for the receiver 43 are required, and one optical fiber for transmitting and receiving is sufficient. It is necessary to have two optical coupling paths between the river and the river and the river and the river and 1! It is clear that one optical coupling path is sufficient. Turn 5' to the right.
友豊濶
次に、第１図を伴なって本発明による半導体発受光装置
の実施例を述べよう。Next, an embodiment of the semiconductor light emitting/receiving device according to the present invention will be described with reference to FIG.
第１図に示す本発明による半導体発受光装■は、次に述
べる構成を有する。The semiconductor light emitting/receiving device (2) according to the present invention shown in FIG. 1 has the following configuration.
−すなわち、例えばＩｒ′ＩＰ″′ｃ′なり且つｎ型を
右する半導体基板１０を右し、その半導体基板１０十に
、例えばＩ ｎ Ｐでｈつ且つｎ型を右するバラツノ・
層乃〒クシッド層と（）−Ｃの半導体層２１と、例えば
ＪｎＧａＡＳＰ系でイτり月つ半導体ｖＩ２１に比し−
１分低い不純物濃度を有する゛ト導体活性層２２と、ぞ
のＹ導体活性層２２よりし僅かに広いエネルギバンドギ
ャップを有する例えば＋ ｎＱａＡＳＰ系ぐなりＦｌつ
半導体層２１に比し十分低い不純物濃度を有する導波路
層どしての半導体層２３と、例えばＩｎＰでなり目つｐ
ルリを有するクラッド層としての半導体層２４どが、そ
れらの順に積層されている、というｉＭ成を有する第１
、第２及び第３の半導体積層体Ｂ １ 、 Ｂ ２及び
Ｂ３が、それらの順に並置（）で形成され、一方、それ
ら半導体積層体Ｂ １．１３２及びＢ３）に、第１、第
２及び第３の電極Ｅ１．Ｅ２及び「３がそれぞれオーミ
ックに付され、また、￥−導導体根板１、半導体積層体
Ｂ１、Ｂ２及びＢ３側とは反対側の面Ｆに、１夕い−（
、電極Ｆｌ、Ｅ２及び「３に対して共通な電極「０がＡ
−ミックに付され−（いる構成を有づ゛る。- That is, a semiconductor substrate 10 made of, for example, Ir'IP'''c' and of n-type is coated with a semiconductor substrate 10 of, for example, Ir'IP''''c' and of n-type.
For example, in the JnGaASP system, the semiconductor layer 21 of the layer No. Ccid layer and the semiconductor layer 21 of ()-
The conductor active layer 22 has an impurity concentration that is 1 minute lower than that of the Y conductor active layer 22, and the impurity concentration is sufficiently lower than that of the +nQaASP type semiconductor layer 21, which has a slightly wider energy band gap than the respective Y conductor active layer 22. The semiconductor layer 23 as a waveguide layer having
The first semiconductor layer 24 as a cladding layer having an iM structure is laminated in that order.
, second and third semiconductor stacks B 1 , B 2 and B3 are formed in that order juxtaposed ( Third electrode E1. E2 and ``3'' are attached ohmically, respectively, and ``1'' is attached to the surface F opposite to the conductor base plate 1 and the semiconductor laminate B1, B2, and B3 side.
, electrodes Fl, E2 and electrodes common to 3, 0 is A
It has a configuration that is attached to the microphone.
この場合、半導体積層体Ｂ’ｌ、Ｒ２及びＢ ３の半導
体活性層２２は、イれらのエネルギバ〕／ドギトツブを
それぞれ［Ｑ 、［ｇ２及びＥＱ３とするどさ、イれら
■−ネルギバンドギャップＥｑ 、Ｅｃ＞ 及び「
ｇ３が、［ｇｌ〈１ｇ２〈［ｇ３の関係の１ネルギバン
ドギ１１ツブを右し、よって、半導体Ｌ１根１０と、半
導体積層体８１と、電極Ｅ１と、共通？８ＶｉＥＯとで
、゛１′導体積ｈゴ休Ｂ１の゛１′導体活性層２２のエ
ネルギバンドｌ′、−ｐツブＥＱ１に、」、って決めら
れた第１の波長λ１を右づる光１．１を発光または受光
し１！？る第１の半導体発受光素子Ｍ１が構成され、ま
た、半導体基板１０と、゛１′−導体積層体Ｂ２と、電
極Ｅ２と、共通電極「０どて・、半導体積層体［３２の
半導体活性層２２のエネルギバンドギャップ［０２によ
って決められた第１の波長λ２を右４る光Ｌ２を発光ま
たは受光し得る第２の半導体発受光素子Ｍ２が構成され
、さらに、半導体基板１０と、１（導体積層体Ｂ３ど、
電極Ｅ３と、共通電極ＦＯどで、半導体Ｖ４層休日３の
１′導（木ｒｌ！ｌ竹層２２の１−ネノしＸ′バンドギ
１１ ツブ［Ｑ によって決められた第１の波長λ３を
右する光Ｌ３を発光または受光し得る第３の半導体発受
光素子Ｍ３が構成されている。In this case, the semiconductor active layers 22 of the semiconductor stacks B'l, R2, and B3 have their energy bands [Q, g2, and EQ3, respectively, and their energy bands] Gap Eq, Ec> and “
g3 is the same as the 1 energy band 11 in the relationship [gl<1g2<[g3, so that the semiconductor L1 root 10, the semiconductor stack 81, and the electrode E1 are common? 8ViEO, the light 1 whose first wavelength λ1 is set to the right of the energy band l', -p of the active layer 22 of the 1' conductor active layer 22 of the 1' conductor volume h and the energy band EQ1. .1 is emitted or received and 1! ? A first semiconductor light emitting/receiving element M1 is constructed, and also includes a semiconductor substrate 10, a conductive laminate B2, an electrode E2, a common electrode ``0,'' and a semiconductor active layer of the semiconductor laminate [32]. A second semiconductor light emitting/receiving element M2 capable of emitting or receiving light L2 having a first wavelength λ2 determined by the energy band gap [02 of the layer 22 is configured, and further includes a semiconductor substrate 10 and a semiconductor substrate 1 ( Conductor laminate B3 etc.
At the electrode E3, the common electrode FO, etc., the first wavelength λ3 determined by A third semiconductor light emitting/receiving element M3 that can emit or receive light L3 is configured.
なお、上述した構成を有する本発明による半導体発受光
装置は、実際上、次に述べる構成を有する。Note that the semiconductor light emitting/receiving device according to the present invention having the above-described configuration actually has the following configuration.
すなわち、半導体基板１０上に、半導体１？ｉ層体８１
〜Ｂ３の半導体層２１になる半導体層３１が形成され、
その半導体層３１上に半導体積層体８１．Ｂ２及びＢ３
の半導体活性層２２がそれらの順に並置して形成され、
そして、半導体層３１上に、半導体積層体８１〜Ｂ３の
半導体活性層２２を埋置して、半導体！！４ＷＩ体８１
〜Ｂ３の半導体１！１ｉ２３になる半導体層３３と、半
導体積層体Ｂ１〜Ｂ３の半導体ＷＪ２４になる半導体層
３４とがそれらの順に形成され、しかして、半導体！１
３１．３３及び３４からなる半導体積層体内に、その上
方からプロトンの照射によって、上方からみて、半導体
１１３１．３３及び３４からなる半導体積層体を３分す
るように、絶縁層１１２、及び１２３が、半導体積層体
Ｂ１及びＢ２の半導体活性層２２間、及び半導体積層体
Ｂ２及びＢ３の半導体活性層２２間において、ともに半
導体基板１０に達する深さに形成され、よって、半導体
層３１．３３及び３４から１．Ｅる半導体積層体の、絶
縁Ｆｍ＋１２からみて絶縁層ｒ２３側とは反対側の領域
を、半導体部ｆ１層２２を含んでいる半導体積層体Ｂ１
とし、また、半導体層３１．３３及び３４からなる半導
体積層体の、絶縁層１１２及び１２３間の領域を、半導
体活性ｍ２２を含Ｉυでいる半導体積層体Ｂ２とし、さ
らに、半導体層３１．３３及び３４からなる半導体積層
体の、絶縁ＦＪｊＩ２３からみて絶縁１ｉ１１２側とは
反対側の領域を、半導体活性層２２を含んでいる半導体
積層体Ｂ３としている構成を有する。That is, on the semiconductor substrate 10, the semiconductor 1? i-layer body 81
A semiconductor layer 31 that becomes the semiconductor layer 21 of ~B3 is formed,
A semiconductor stack 81 is placed on the semiconductor layer 31. B2 and B3
semiconductor active layers 22 are formed in juxtaposition in that order,
Then, the semiconductor active layers 22 of the semiconductor stacked bodies 81 to B3 are buried on the semiconductor layer 31 to form a semiconductor! ! 4WI body 81
The semiconductor layer 33 that becomes the semiconductor 1!1i23 of ~B3 and the semiconductor layer 34 that becomes the semiconductor WJ24 of the semiconductor stacked bodies B1 to B3 are formed in that order, and the semiconductor! 1
Insulating layers 112 and 123 are formed in the semiconductor stack consisting of the semiconductors 113, 33 and 34 by irradiating protons from above so as to divide the semiconductor stack consisting of the semiconductors 113, 33 and 34 into thirds when viewed from above. Between the semiconductor active layers 22 of the semiconductor stacks B1 and B2 and between the semiconductor active layers 22 of the semiconductor stacks B2 and B3, both are formed to a depth that reaches the semiconductor substrate 10, so that the semiconductor layers 31, 33 and 34 1. The region on the side opposite to the insulating layer r23 side when viewed from the insulation Fm+12 of the semiconductor stacked body E is converted into a semiconductor stacked body B1 including the semiconductor part f1 layer 22.
In addition, the region between the insulating layers 112 and 123 of the semiconductor stack consisting of the semiconductor layers 31, 33 and 34 is defined as a semiconductor stack B2 containing the semiconductor active m22, and further, the semiconductor stack B2 includes the semiconductor active m22. 34, the region on the side opposite to the insulation 1i112 side when viewed from the insulation FJjI23 is a semiconductor multilayer body B3 including the semiconductor active layer 22.
以上が、本発明による半導体発受光装置の実施例の構成
である。The above is the configuration of the embodiment of the semiconductor light emitting/receiving device according to the present invention.
このような構成を有する本発明による半導体発受光装置
の場合、第１、第２及び第３の半導体発受光素子Ｍ１、
Ｍ２及びＭ３がそれらの順に並置して配列されている構
成を有する。In the case of the semiconductor light emitting/receiving device according to the present invention having such a configuration, the first, second and third semiconductor light emitting/receiving elements M1,
It has a configuration in which M2 and M3 are arranged side by side in that order.
また、第１、第２及び第３の半導体発受光素子Ｍ１、Ｍ
２及びＭ３のそれぞれを構成している第１、第２及び第
３の半導体１ａｌｉ！体Ｂ１、Ｂ２及びＢ３の半導体活
性１ｉ２２のエネルギバンドギャップＥＱ 、ＥＱ
及びＥＱ３が、Ｅ（１）１〈ＥＱ２〈ＥＱ３の関係を
有する。In addition, the first, second and third semiconductor light emitting/receiving elements M1, M
2 and M3, respectively, the first, second and third semiconductors 1ali! Energy band gaps EQ, EQ of semiconductor active 1i22 of bodies B1, B2 and B3
and EQ3 have the relationship E(1)1<EQ2<EQ3.
さらに、第１、第２及び第３の半導体発受光素子がそれ
ぞれ発光または受光し得る第１、第２及び第３の光Ｌ
、Ｌ 及びＬ３の波長λ１、λ 及びλ３が、λ１
〉λ２〉λ３の関係を有する。Furthermore, first, second and third light L that can be emitted or received by the first, second and third semiconductor light emitting/receiving elements, respectively.
, L and L3, the wavelengths λ1, λ and λ3 are λ1
〉λ2〉λ3.
このため、いま、第１の半導体発受光素子Ｍ１の電極Ｅ
１及び’Ｅ ３間に、電極Ｅ１側を正とづる電源を接続
し、その半導体発受光素子Ｍ１で波長λ を有する光Ｌ
１を発光させれば、その尤Ｌ１が第２及び第３の半導体
発受光素子Ｍ２及びＭ３でほとんど吸収されることなし
に、第２及び第３の半導体発受光素子Ｍ２及びＭ３をそ
れらの順に通って、第１の半導体発受光素子Ｍ１側とは
反対側から外部に出射する。Therefore, now the electrode E of the first semiconductor light emitting/receiving element M1
A power source with the electrode E1 side as positive is connected between 1 and 'E3, and the semiconductor light emitting/receiving element M1 emits light L having a wavelength λ.
1, the second and third semiconductor light emitting/receiving elements M2 and M3 are emitted in that order without much of the light L1 being absorbed by the second and third semiconductor light emitting/receiving elements M2 and M3. The light is emitted to the outside from the side opposite to the first semiconductor light emitting/receiving element M1 side.
また、第３の半導体発受光素子Ｍ３の電極Ｅ３及びＥＱ
間に、電極Ｅ３側を負とする電源を接続して、または接
続することなしに、半導体発受光素子Ｍ３の半導体発受
光素子Ｍ１側とは反対側から、第１の半導体発受光素子
Ｍ１側に向番プて波長λ を有する光Ｌ３を入射させれ
ば、その光Ｌ３がほとんど第３の半導体発受光素子で吸
収され、その結果、波長λ３を有する光し３の受光出力
が、第３の電極及び共通電極ＥＯを介して、出力される
。Further, the electrodes E3 and EQ of the third semiconductor light emitting/receiving element M3
In between, the first semiconductor light emitting/receiving element M1 side is connected to the first semiconductor light emitting/receiving element M1 side from the side opposite to the semiconductor light emitting/receiving element M1 side of the semiconductor light emitting/receiving element M3, with or without connecting a power source with the electrode E3 side negative. When the light L3 having the wavelength λ is incident on the third semiconductor light emitting/receiving element, most of the light L3 is absorbed by the third semiconductor light emitting/receiving element, and as a result, the light receiving output of the light L3 having the wavelength λ3 is and the common electrode EO.
さらに、第３の半導体発受光素子Ｍ３の電極Ｅ３及び６
０間に、電極Ｅ３側を正とする電源を接続し、半導体発
受光素子Ｍ３で波長λ３を有する光Ｌ３を発光させれば
、その光Ｌ３が、第１の半導体発受光素子Ｍ１側とは反
対側から外部に出射する。Furthermore, the electrodes E3 and 6 of the third semiconductor light emitting/receiving element M3
If a power supply with the electrode E3 side positive is connected between 0 and the semiconductor light emitting/receiving element M3 emits light L3 having a wavelength λ3, the light L3 will be different from the first semiconductor light emitting/receiving element M1 side. Emit to the outside from the opposite side.
この場合、波長λ を右する光Ｌ３は、第１の半導体発
受光索子Ｍ１側にも向うが、その光１−３は、第２の半
導体発受光素子Ｍ２でほとんと吸収されるため、第１の
半導体発受光素子に【よとんど入射しない。In this case, the light L3 having the wavelength λ also goes to the first semiconductor light emitting/receiving element M1, but the light 1-3 is almost absorbed by the second semiconductor light emitting/receiving element M2. Almost no light enters the first semiconductor light emitting/receiving element.
また、第３の半導体発受光素子Ｍ３の電極Ｆ３及びＥＯ
間に電極「３側を負とする電源を接続して、または接続
することなしに、半導体発受光素子Ｍ３のの第１の半導
体発受光素子Ｍ１側とは反対側から、第１の半導体発受
光素子Ｍ１側に向けて波長λ１を４′Ｔする光Ｌ１を入
射さｊすれば、その光し、が、第３及び第２の半導体発
受光素子Ｍ３及びＭ２１’はとんど吸収されることなし
に、第３及び第２の半導体発受光素子Ｍ３及びＭ２をそ
れらの順に通って、第１の半導体発受光素子Ｍ７に入射
し、ぞして、その第１の半導体発受光素子Ｍ１で吸収さ
れ、ぞの結束、波長λ を有する光Ｌ１の受光出力が第
１の電極及び共通電極を介して出力される。Further, the electrodes F3 and EO of the third semiconductor light emitting/receiving element M3
The first semiconductor light emitting/receiving element M3 is connected to the first semiconductor light emitting/receiving element M1 from the side opposite to the first semiconductor light emitting/receiving element M1 side, with or without connecting a power source with the negative electrode 3 side in between. When light L1 with a wavelength λ1 of 4'T is incident on the light receiving element M1 side, the light is almost absorbed by the third and second semiconductor light emitting/receiving elements M3 and M21'. The light passes through the third and second semiconductor light emitting/receiving elements M3 and M2 in that order, enters the first semiconductor light emitting/receiving element M7, and then enters the first semiconductor light emitting/receiving element M1. After being absorbed, the received light output of the light L1 having the wavelength λ is outputted through the first electrode and the common electrode.
このため、第１図に示す本発明による半導体発受光装置
によれば、第１（または第２）の波長を有する光（上側
の場合、波長Ａ１を有する光Ｌｉ（また【よ波長λ２を
有する光Ｌ３））を、光ファイバを用いて他の位置にｊ
ス信さぜ１ｑるように、第１くまたは第３）の半導体発
受光素子Ｍｌ（またはＭ３）で、発光ざＩｊ、ながら、
それと同時に、第２（または第１）の波長を有する光（
上側の場合、波長λ を有する光Ｌ３ （または波長λ
１をｈする光り、））を、光ファイバを用いて他の位置
から受信さｌ！得るように、第３（または第１）の半導
体発受光素子Ｍ３（またはＭｌ）で、受光させることが
できる。Therefore, according to the semiconductor light emitting/receiving device according to the present invention shown in FIG. Light L3)) is transferred to another location using an optical fiber.
The first or third) semiconductor light emitting/receiving element Ml (or M3) emits light while Ij as shown in FIG.
At the same time, light having a second (or first) wavelength (
In the upper case, light L3 with wavelength λ (or wavelength λ
1) is received from another location using an optical fiber. Thus, the third (or first) semiconductor light emitting/receiving element M3 (or Ml) can receive light.
しかも、この場合、第ｉｃｔたは第２）の波長を有する
光（上側の場合、波長λ１を有する光Ｌｉ （または
波長λ３を有する光Ｌ３））を、光ファイバを用いて他
の位置に送信させ、また、光フ？イバを用いて、第２（
または第１）の波長を有する光（上側の場合、波長λ３
を有する光Ｌ３ （または波長λ１を右する光１．１）
を受信させる場合、第２図において、第１図で上述した
本発明による４！′導体発受光装置の２つをＵｌ及び（
」２どじて用い、そしてそれら半導体発受光装置Ｕ１及
びＵ２間を１本の送受信用の光ファイバＦで結合してい
ることが示されているように、送信用の光ファイバと、
受信用の光フフイバとの２本の光ファイバを必要とせず
、送受信用の１つの光ファイバで足り、また、その送受
信用の１つの光ファイバとの間に２つの光結合路を必要
とせず、１つの光結合路で足りる。Furthermore, in this case, the light having the ict or second wavelength (in the upper case, the light Li having the wavelength λ1 (or the light L3 having the wavelength λ3)) is transmitted to another position using an optical fiber. Let's light up again? Use the second (
or the first) wavelength (in the case of the upper side, the wavelength λ3
light L3 with wavelength λ1 (or light 1.1 with wavelength λ1)
2, the 4! according to the present invention described above in FIG. 1 is received. 'Two of the conductor light emitting and receiving devices are connected to Ul and (
''2, and the semiconductor light emitting/receiving devices U1 and U2 are connected by one optical fiber F for transmitting and receiving, as shown in FIG.
It does not require two optical fibers for reception and one optical fiber for transmission and reception, and it does not require two optical coupling paths between it and one optical fiber for transmission and reception. , one optical coupling path is sufficient.
また、上述したように、波長λ１ （またはλ３）を有
する光１−（またはＬ３）を、第１くまたは第３）の半
導体発受光素子Ｍ１（またはＭ３）で発光させながら、
てれと同時に波長λ３ （またはλ１）を右する光Ｌ３
（またはＬｌ）を、第３（または第１）の半導体発受
光素子Ｍ３（またはＭｌ）で受光ざぜるとき、第２の半
導体発受光素子Ｍ３の電極Ｅ２及びＦＯを短絡させてお
くことによって、′ｊ！ｉ音を実質的に伴わしめること
なしに、上述した発光及び受光を行わせることがでさる
、という優れた特徴を有する。Further, as described above, while emitting the light 1- (or L3) having the wavelength λ1 (or λ3) in the first or third) semiconductor light emitting/receiving element M1 (or M3),
Light L3 that changes wavelength λ3 (or λ1) at the same time
(or Ll) by the third (or first) semiconductor light emitting/receiving element M3 (or Ml), by short-circuiting the electrode E2 and FO of the second semiconductor light emitting/receiving element M3, 'j! It has the excellent feature that the above-mentioned light emission and light reception can be performed without substantially accompanying i-sound.
なお、上述においては、本発明による半導体発受先験は
の１つの実施例を示したに留まり、本発明の精神を１２
−Ｊることむしに、種々の変型、変更をなしくｑるであ
ろう。It should be noted that the above description merely shows one embodiment of the semiconductor production and production process according to the present invention;
-J is likely to undergo various modifications and changes.
第１図は、本発明による半導体発受光装置の実施例を示
プ路線的断面図である。
第２図は、第１図に示す本発明による半導体発受光装置
を用いて、双方向通信を行い得ることを示す路線的系統
図である。
１０・・・・・・・・・・・・・・・半導体基板８１．
８２、Ｂ３
・・・・・・・・・・・・・・・半導体積層体２１．２
３．２４
・・・・・・・・・・・・・・・半導体溜２２・・・・
・・・・・・・・・・・半導体活性層Ｅ１、Ｅ２、Ｅ３
・・・・・・・・・・・・・・・電極
ＥＯ・・・・・・・・・・・・・・・共通電極Ｍ１、Ｍ
２、Ｍ３FIG. 1 is a schematic sectional view showing an embodiment of a semiconductor light emitting/receiving device according to the present invention. FIG. 2 is a schematic diagram showing that bidirectional communication can be performed using the semiconductor light emitting/receiving device according to the present invention shown in FIG. 10... Semiconductor substrate 81.
82, B3 ...... Semiconductor laminate 21.2
3.24 ...... Semiconductor reservoir 22...
...... Semiconductor active layers E1, E2, E3 ...... Electrode EO ......・Common electrode M1, M
2, M3
Claims (1)
する第１、第２及び第３の半導体積層体が、それらの順
に並置して、それらに共通の半導体基板上に形成され、 上記第１、第２及び第３の半導体積層体上に、第１、第
２及び第３の電極がそれぞれ付され、上記半導体基板に
、上記第１、第２及び第３の電極に対して共通な共通電
極が付されている構成を有し、 上記第１の半導体積層体の半導体活性層が、上記第２の
半導体積層体の半導体活性層に比し狭いエネルギバンド
ギャップを有し、 上記第２の半導体積層体の半導体活性層が、上記第３の
半導体積層体の半導体活性層に比し狭いエネルギバンド
ギャップを有し、 上記半導体基板と、上記第１の半導体積層体と、上記第
１の電極と、上記共通電極とで、上記第１の半導体積層
体の半導体活性層のエネルギバンドギャップによって決
められた第１の波長を有する光を発光または受光し得る
第１の半導体発受光素子が構成され、 上記半導体基板と、上記第２の半導体積層体と、上記第
２の電極と、上記共通電極とで、上記第２の半導体積層
体の半導体活性層のエネルギバンドギャップによつて決
められた上記第１の波長に比し短い第２の波長を有する
光を発光または受光し得る第２の半導体発受光素子が構
成され、 上記半導体基板と、上記第３の半導体積層体と、上記第
３の電極と、上記共通電極とで、上記第３の半導体積層
体の半導体活性層のエネルギバンドギャップによつて決
められた上記第２の波長に比し短い第３の波長を有する
光を発光または受光し得る第３の半導体発受光素子が構
成されていることを特徴とする半導体発受光装置。[Scope of Claims] First, second, and third semiconductor stacks each including a semiconductor active layer and having the same stacked structure are arranged side by side in that order and formed on a common semiconductor substrate. first, second and third electrodes are attached on the first, second and third semiconductor laminates, respectively, and the first, second and third electrodes are attached to the semiconductor substrate. The semiconductor active layer of the first semiconductor stack has a narrower energy band gap than the semiconductor active layer of the second semiconductor stack. , the semiconductor active layer of the second semiconductor stack has a narrower energy band gap than the semiconductor active layer of the third semiconductor stack, the semiconductor substrate and the first semiconductor stack; A first semiconductor light emitting device capable of emitting or receiving light having a first wavelength determined by the energy band gap of the semiconductor active layer of the first semiconductor stack, using the first electrode and the common electrode. A light-receiving element is configured, and includes the semiconductor substrate, the second semiconductor stack, the second electrode, and the common electrode, and the energy band gap of the semiconductor active layer of the second semiconductor stack. A second semiconductor light emitting/receiving element capable of emitting or receiving light having a second wavelength shorter than the first wavelength determined by the above is configured, the semiconductor substrate and the third semiconductor laminate , the third electrode and the common electrode have a third wavelength shorter than the second wavelength determined by the energy band gap of the semiconductor active layer of the third semiconductor stack. A semiconductor light emitting/receiving device comprising a third semiconductor light emitting/receiving element capable of emitting or receiving light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045796A JPS61204987A (en) | 1985-03-08 | 1985-03-08 | Semiconductor light emitting and receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045796A JPS61204987A (en) | 1985-03-08 | 1985-03-08 | Semiconductor light emitting and receiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61204987A true JPS61204987A (en) | 1986-09-11 |
Family
ID=12729236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60045796A Pending JPS61204987A (en) | 1985-03-08 | 1985-03-08 | Semiconductor light emitting and receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61204987A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140678A (en) * | 1987-11-26 | 1989-06-01 | Matsushita Electric Ind Co Ltd | Photodetector |
| EP0755082A1 (en) * | 1995-07-17 | 1997-01-22 | France Telecom | Emitting/receiving semiconductor device at 1,3 um and 1,5 um |
| JP2006515075A (en) * | 2002-12-20 | 2006-05-18 | マウナ ケア テクノロジーズ | Parallel confocal laser microscope apparatus based on VCSEL technology |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5154387A (en) * | 1974-09-17 | 1976-05-13 | Northern Electric Co | |
| JPS54138303A (en) * | 1978-04-19 | 1979-10-26 | Matsushita Electric Ind Co Ltd | Light emitting element and photo detector |
| JPS57181177A (en) * | 1981-04-30 | 1982-11-08 | Omron Tateisi Electronics Co | Element for light emission and detection |
-
1985
- 1985-03-08 JP JP60045796A patent/JPS61204987A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5154387A (en) * | 1974-09-17 | 1976-05-13 | Northern Electric Co | |
| JPS54138303A (en) * | 1978-04-19 | 1979-10-26 | Matsushita Electric Ind Co Ltd | Light emitting element and photo detector |
| JPS57181177A (en) * | 1981-04-30 | 1982-11-08 | Omron Tateisi Electronics Co | Element for light emission and detection |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140678A (en) * | 1987-11-26 | 1989-06-01 | Matsushita Electric Ind Co Ltd | Photodetector |
| EP0755082A1 (en) * | 1995-07-17 | 1997-01-22 | France Telecom | Emitting/receiving semiconductor device at 1,3 um and 1,5 um |
| FR2737044A1 (en) * | 1995-07-17 | 1997-01-24 | France Telecom | SEMICONDUCTOR EMISSION-RECEPTION DEVICE, IN PARTICULAR AT 1.3 UM AND 1.5 UM |
| JP2006515075A (en) * | 2002-12-20 | 2006-05-18 | マウナ ケア テクノロジーズ | Parallel confocal laser microscope apparatus based on VCSEL technology |
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