JPS57181177A - Element for light emission and detection - Google Patents

Element for light emission and detection

Info

Publication number
JPS57181177A
JPS57181177A JP6631881A JP6631881A JPS57181177A JP S57181177 A JPS57181177 A JP S57181177A JP 6631881 A JP6631881 A JP 6631881A JP 6631881 A JP6631881 A JP 6631881A JP S57181177 A JPS57181177 A JP S57181177A
Authority
JP
Japan
Prior art keywords
layer
type
light emission
type inp
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6631881A
Other languages
Japanese (ja)
Inventor
Fumihiko Sato
Tsukasa Takeuchi
Kimihiko Shimura
Masatoshi Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP6631881A priority Critical patent/JPS57181177A/en
Publication of JPS57181177A publication Critical patent/JPS57181177A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To simplify light transmission with high density, by laminating two or more diodes units via a high resistant layer having energy gap medium of that of two diodes for light emission or detection in different wave lengths in the direction of impression voltage. CONSTITUTION:An N type InP layer 2, N type InGaAsP layer 3, P type InGaAsP layer 4, P type InP layer 5, Cr doped InGaAsP layer 6, P type InP layer 7, P type InGaAsP layer 8, N type layer 9 and N type InP layer 10 are successively laminated. Layers 1-7 and 7-10 respectively constitute one diode unit D1 and D2 via the high resistant medium layer, that is the Cr doped layer 6 being insulated each other. The diode D1 functions as a light emission mode and diode D2 as light detection mode. This method allows wave length multiplex bi- directional transmission by a single optical fiber.
JP6631881A 1981-04-30 1981-04-30 Element for light emission and detection Pending JPS57181177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6631881A JPS57181177A (en) 1981-04-30 1981-04-30 Element for light emission and detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6631881A JPS57181177A (en) 1981-04-30 1981-04-30 Element for light emission and detection

Publications (1)

Publication Number Publication Date
JPS57181177A true JPS57181177A (en) 1982-11-08

Family

ID=13312358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6631881A Pending JPS57181177A (en) 1981-04-30 1981-04-30 Element for light emission and detection

Country Status (1)

Country Link
JP (1) JPS57181177A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204987A (en) * 1985-03-08 1986-09-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting and receiving device
WO2000014813A1 (en) * 1998-09-04 2000-03-16 Seiko Epson Corporation Device with optical communication means
JP2002504754A (en) * 1998-02-18 2002-02-12 インフィネオン・テクノロジーズ・アーゲー Component having optical transmitter and optical receiver
JP2010192815A (en) * 2009-02-20 2010-09-02 Fujitsu Ltd Image sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204987A (en) * 1985-03-08 1986-09-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting and receiving device
JP2002504754A (en) * 1998-02-18 2002-02-12 インフィネオン・テクノロジーズ・アーゲー Component having optical transmitter and optical receiver
WO2000014813A1 (en) * 1998-09-04 2000-03-16 Seiko Epson Corporation Device with optical communication means
US6430325B1 (en) 1998-09-04 2002-08-06 Seiko Epson Corporation Device having a light transmission device
US6775428B2 (en) 1998-09-04 2004-08-10 Seiko Epson Corporation Device having a light transmission device
JP2010192815A (en) * 2009-02-20 2010-09-02 Fujitsu Ltd Image sensor

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